JPH047872A - Solid-state image sensor - Google Patents

Solid-state image sensor

Info

Publication number
JPH047872A
JPH047872A JP2111068A JP11106890A JPH047872A JP H047872 A JPH047872 A JP H047872A JP 2111068 A JP2111068 A JP 2111068A JP 11106890 A JP11106890 A JP 11106890A JP H047872 A JPH047872 A JP H047872A
Authority
JP
Japan
Prior art keywords
light
shielding pattern
image sensor
solid
color filter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2111068A
Other languages
Japanese (ja)
Inventor
Shunichi Naka
仲 俊一
Tsuguhisa Inoue
次久 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2111068A priority Critical patent/JPH047872A/en
Publication of JPH047872A publication Critical patent/JPH047872A/en
Pending legal-status Critical Current

Links

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  • Optical Filters (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain an excellent image free from irregularities of luminance, irregularities of color, roughness of an image surface, etc., by forming a light shielding pattern of metal in a stripe type. CONSTITUTION:A color filter 15 is arranged for each photo detecting element 11 via an intermediate film 14. A light shielding pattern 13 of metal is formed in a stripe type for each of the photo detecting parts 11, in order to prevent the incidence of light except the light passing the color filter 15 above the photo detecting part. Hence, as compared with the light shielding pattern of a lattice type, the pattern area is reduced, and the light amount of irregular reflection is decreased. Thereby factors generating defects such as irregularities of luminance, irregularities of color, and roughness of an image surface are decreased, and an excellent image can be obtained.

Description

【発明の詳細な説明】[Detailed description of the invention] 【産業上の利用分野】[Industrial application field]

この発明は、固体撮像素子に関する。 The present invention relates to a solid-state image sensor.

【従来の技術】[Conventional technology]

第2図は従来のCCD (電荷結合素子)カラー撮像素
子の一例を示す断面図である。 このカラー撮像素子はフォトダイオードを有する受光部
11.il、、、を形成した基板12上に、上記受光部
!1を除くエリアにアルミ等の金属で遮光パターンI3
を形成し、更にアクリル等の中間膜14を形成した後、
上記各受光部11の上にゼラチン等をR(レッド)、G
 (グリーン)あるいはB(ブルー)のカラーに染色し
たオンチップカラーフィルタ15.+5.、、を形成し
、その上から更に保護膜I6を形成している。 上記第2図では中間膜I4と保護膜16との境界面やカ
ラーフィルタ15の境界面は、きれいな直線や曲面とし
て描かれているが、実際は下部の複雑な形状、段差を反
映して境界面は複雑な形状となっている。そのため、受
光部l!の上方から入射した光は上記中間膜14と保護
膜16との境界面やカラーフィルタI5の境界面で屈折
して雑多な方向に進み、互いに隣の受光部11へ入り、
映像がぼやけたり色がずれたりすることがある。 上記遮光パターン13はこの隣の領域からの光入射を防
止するためのもので、第3図に示すように格子状に形成
されている。すなわち、各受光部11.11.、 、の
上の非遮光領域17.17゜以外の領域をすべて覆うこ
とにより、各受光部11にはその上のカラーフィルタ1
5を通過した光のみが入射するようにして、正確な映像
信号が得られるようにしようとするものである。
FIG. 2 is a sectional view showing an example of a conventional CCD (charge coupled device) color image sensor. This color image sensor has a light receiving section 11 having a photodiode. On the substrate 12 on which il, . Light-shielding pattern I3 with metal such as aluminum in areas except 1
After forming an intermediate film 14 such as acrylic,
Apply gelatin or the like on each of the light receiving sections 11 (R (red), G).
On-chip color filter dyed in (green) or B (blue) color 15. +5. , , and a protective film I6 is further formed thereon. In FIG. 2 above, the interface between the interlayer film I4 and the protective film 16 and the interface between the color filter 15 are drawn as clean straight lines or curved surfaces, but in reality, the interfaces reflect the complex shapes and steps at the bottom. has a complex shape. Therefore, the light receiving part l! The light incident from above is refracted at the interface between the intermediate film 14 and the protective film 16 and the interface between the color filter I5, propagates in various directions, and enters the adjacent light receiving sections 11.
The image may be blurry or the colors may be off. The light-shielding pattern 13 is for preventing light from entering the adjacent area, and is formed in a lattice shape as shown in FIG. 3. That is, each light receiving section 11.11. By covering all areas other than the non-shading area 17.17° above , , each light receiving section 11 has a color filter 1 above it.
The purpose is to allow only the light that has passed through 5 to enter, thereby obtaining an accurate video signal.

【発明が解決しようとする課題】[Problem to be solved by the invention]

しかしながら、上記従来の遮光パター7では、アルミ等
の金属でできた遮光膜13の反射率が高い場合には、入
射した光の反射量が多くなり、また、遮光膜13の形状
が複雑であるため、第4図に示すように反射光の方向か
定まらず乱反射する。 そのため、画像に輝度ムラや色ムラあるいは画面のざら
つき等の不良を発生するという問題があった。 そこで、この発明の目的は、乱反射する光の量を少なく
した遮光パターンを有して良好な画像を得ることができ
る固体撮像素子を提供することにある。
However, in the conventional light shielding putter 7, when the reflectance of the light shielding film 13 made of metal such as aluminum is high, the amount of incident light is reflected, and the shape of the light shielding film 13 is complicated. Therefore, as shown in FIG. 4, the direction of the reflected light is not determined and it is reflected diffusely. Therefore, there is a problem in that defects such as uneven brightness, uneven color, and roughness of the screen occur in the image. SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a solid-state image sensor that has a light-shielding pattern that reduces the amount of diffusely reflected light and can obtain good images.

【課題を解決するための手段】[Means to solve the problem]

上記目的を達成するため、この発明は、複数の受光部を
形成した基板上に、上記各受光部に対してそれぞれ一つ
のカラーフィルタを中間膜を介して配設すると共に、上
記各受光部にその受光部の上のカラーフィルタを通過し
1こ光取外の光か入射するのを防止するための金属製の
遮光パターンを形成した固体撮像素子において、上記遮
光パターンをストライブ状に形成してなることを特徴と
している。
In order to achieve the above object, the present invention provides a substrate on which a plurality of light receiving parts are formed, one color filter is disposed for each of the light receiving parts via an interlayer film, and a color filter is disposed for each of the light receiving parts via an intermediate film. In a solid-state image sensor in which a metal light-shielding pattern is formed to prevent one light from passing through a color filter above the light-receiving part and entering, the light-shielding pattern is formed in a stripe shape. It is characterized by the fact that

【作用】[Effect]

遮光パターンがストライブ状に形成されているので、格
子状の遮光パターンの場合に比べてパターンの面積が少
なくなり、乱反射する光の量が減少する。従って、画像
に輝度ムラや色ムラあるいは画面のざらつき等の不良を
起こす要因が減少し、良好な画像が得られる。
Since the light-shielding pattern is formed in a stripe shape, the area of the pattern is smaller than in the case of a grid-like light-shielding pattern, and the amount of diffusely reflected light is reduced. Therefore, factors that cause defects such as brightness unevenness, color unevenness, and screen roughness in the image are reduced, and a good image can be obtained.

【実施例】【Example】

以下、この発明を図示の実施例にもとづき説明する。 第1図はこの発明の一実施例の固体撮像素子の遮光膜の
パターンを示す平面図である。 この固体撮像素子は遮光膜3がストライブ状に形成され
ていることを除いては第2図に示す従来の固体撮像素子
と同しである。 この第1図に示すように、遮光膜をストライブ状にした
場合には、第3図に示すような格子状にした場合に比ベ
パターンの面積か減少する。従って、この遮光膜で乱反
射されて受光部のホトダイオードに入射する光の量か減
少する。すなわち、画像に輝度ムラや色ムラあるいは画
面のざらつき等の不良を起こす要因が減少する。実験で
は、従来例では不良品がIO数%あったのに対し、未実
施例のものでは不良品が数%以下に減少したことが確認
されている。
The present invention will be explained below based on the illustrated embodiments. FIG. 1 is a plan view showing a pattern of a light-shielding film of a solid-state image sensor according to an embodiment of the present invention. This solid-state image sensor is the same as the conventional solid-state image sensor shown in FIG. 2, except that the light shielding film 3 is formed in a stripe shape. As shown in FIG. 1, when the light shielding film is formed into a stripe shape, the area of the pattern is reduced compared to when it is formed into a lattice shape as shown in FIG. Therefore, the amount of light that is diffusely reflected by this light-shielding film and enters the photodiode of the light receiving section is reduced. That is, the factors that cause defects such as uneven brightness, uneven color, and roughness of the image in the image are reduced. In experiments, it has been confirmed that while the number of defective products in the conventional example was several percent of IO, the number of defective products in the unexamined example was reduced to several percent or less.

【発明の効果】【Effect of the invention】

以上より明らかなように、この発明の固体撮像素子は、
複数の受光部を形成した基板上の上記各受光部の上に中
間膜を介して配設されたカラーフィルタを通過した光取
外の光が上記受光部に入射するのを防止するための金属
製の遮光パターンをストライブ状に形成しているので、
輝度ムラや色ムラあるいは画面のざらつき等のない良好
な画像を得ることかできる。
As is clear from the above, the solid-state image sensor of the present invention is
A metal for preventing light from being extracted after passing through a color filter disposed on each of the light receiving parts on a substrate having a plurality of light receiving parts via an interlayer film from entering the light receiving part. The light-shielding pattern is formed into stripes, so
It is possible to obtain a good image without uneven brightness, uneven color, or roughness on the screen.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の固体撮像素子の一実施例における遮
光パターンを示す平面図、第2図は従来の固体撮像素子
の断面図、第3図は上記従来例における遮光パターンを
示す平面図、第4図は上記従来例における遮光パターン
により入射光が乱反射されることを説明する図である。 3・・・ストライブ状の遮光パターン、11・・受光部
、12・・基板、 13・・・格子状の遮光パターン、14・・・中間膜、
15・・・オンチップカラーフィルタ、16・保護膜、
17・・非遮光領域。
FIG. 1 is a plan view showing a light-shielding pattern in an embodiment of the solid-state image sensor of the present invention, FIG. 2 is a cross-sectional view of a conventional solid-state image sensor, and FIG. 3 is a plan view showing a light-shielding pattern in the above-mentioned conventional example. FIG. 4 is a diagram illustrating that incident light is diffusely reflected by the light shielding pattern in the conventional example. 3... Striped light shielding pattern, 11... Light receiving section, 12... Substrate, 13... Grid shaped light shielding pattern, 14... Intermediate film,
15... On-chip color filter, 16. Protective film,
17...Non-shading area.

Claims (1)

【特許請求の範囲】[Claims] (1)複数の受光部を形成した基板上に、上記各受光部
に対してそれぞれ一つのカラーフィルタを中間膜を介し
て配設すると共に、上記各受光部にその受光部の上のカ
ラーフィルタを通過した光以外の光が入射するのを防止
するための金属製の遮光パターンを形成した固体撮像素
子において、上記遮光パターンをストライプ状に形成し
てなることを特徴とする固体撮像素子。
(1) On a substrate on which a plurality of light receiving parts are formed, one color filter is provided for each of the light receiving parts via an interlayer film, and a color filter above the light receiving part is provided for each of the light receiving parts. What is claimed is: 1. A solid-state image sensor having a metal light-shielding pattern formed thereon to prevent light other than light that has passed through from entering the solid-state image sensor, characterized in that the light-shielding pattern is formed in a stripe shape.
JP2111068A 1990-04-25 1990-04-25 Solid-state image sensor Pending JPH047872A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2111068A JPH047872A (en) 1990-04-25 1990-04-25 Solid-state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2111068A JPH047872A (en) 1990-04-25 1990-04-25 Solid-state image sensor

Publications (1)

Publication Number Publication Date
JPH047872A true JPH047872A (en) 1992-01-13

Family

ID=14551576

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2111068A Pending JPH047872A (en) 1990-04-25 1990-04-25 Solid-state image sensor

Country Status (1)

Country Link
JP (1) JPH047872A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980056449A (en) * 1996-12-28 1998-09-25 문정환 Color solid-state imaging device and manufacturing method thereof
KR100788596B1 (en) * 2001-12-28 2007-12-26 매그나칩 반도체 유한회사 Method of manufacturing a image device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980056449A (en) * 1996-12-28 1998-09-25 문정환 Color solid-state imaging device and manufacturing method thereof
KR100788596B1 (en) * 2001-12-28 2007-12-26 매그나칩 반도체 유한회사 Method of manufacturing a image device

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