JPH0478003B2 - - Google Patents
Info
- Publication number
- JPH0478003B2 JPH0478003B2 JP58024825A JP2482583A JPH0478003B2 JP H0478003 B2 JPH0478003 B2 JP H0478003B2 JP 58024825 A JP58024825 A JP 58024825A JP 2482583 A JP2482583 A JP 2482583A JP H0478003 B2 JPH0478003 B2 JP H0478003B2
- Authority
- JP
- Japan
- Prior art keywords
- heater cover
- reactor
- ring
- heater
- susceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000376 reactant Substances 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
本発明は、化学的蒸着(CVD)装置等の反応
炉に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to reactors such as chemical vapor deposition (CVD) devices.
従来のCVD装置の反応炉として、例えば第1
図に示すようなものがある。 For example, the first reactor of a conventional CVD equipment
There is something like the one shown in the figure.
この反応炉1は、上面開口の円筒体をなす本体
2と、本体2の上面に着脱自在に被蓋されたベル
ジヤ3と、炉心である本体2の中心に立設された
支柱4と、この支柱4に水平に支持された中間べ
ース5と、べース上に立設されたスタンド6の上
端に着脱自在に支持されたバツフア7と、本体2
の底面上に公転するように設備されたターンテー
ブル8と、ターンテーブル8に自転するように直
角に軸支された複数本の支持軸9と、各軸9の上
端に固着されてウエハ11を保持するサセプタ1
0と、前記支持軸9とは別の複数の支持軸12に
支持され、サセプタ10を囲繞するように嵌合す
る複数の透孔14を有するリング状のヒータカバ
ー13と、ヒータカバー13の下方に環状に敷設
されたヒータ15とから、大略構成されている。 This reactor 1 consists of a main body 2 which is a cylindrical body with an open top, a bell gear 3 which is removably covered on the top of the main body 2, a support 4 which is erected at the center of the main body 2 which is a reactor core, and An intermediate base 5 supported horizontally on a column 4, a buffer 7 detachably supported on the upper end of a stand 6 erected on the base, and a main body 2.
A turntable 8 is installed to revolve on the bottom surface of the turntable 8, a plurality of support shafts 9 are supported perpendicularly to the turntable 8 so as to rotate, and a wafer 11 is fixed to the upper end of each shaft 9. Susceptor 1 to hold
0, a ring-shaped heater cover 13 supported by a plurality of support shafts 12 different from the support shaft 9, and having a plurality of through holes 14 that fit so as to surround the susceptor 10, and a lower part of the heater cover 13. The heater 15 is generally constructed of a heater 15 arranged in an annular manner.
そして、各サセプタ10は自転しながら本体2
の内周壁とバツフア7の外縁辺との間で炉心の周
りを公転し、この自公転により、サセプタ10上
のウエハ11に対する均質なCVD反応を確保す
るようにしている。また、このCVD反応を促進
するため、ウエハ11はサセプタ10の下からヒ
ータ15で加熱され、この加熱が有効に行なわれ
るように、かつ反応ガスが下方に逃散しないよう
にヒータカバー13がサセプタ10の外部を囲繞
している。 Then, each susceptor 10 rotates while rotating the main body 2.
It revolves around the reactor core between the inner circumferential wall of the buffer 7 and the outer edge of the buffer 7, and this rotation ensures a homogeneous CVD reaction on the wafer 11 on the susceptor 10. Further, in order to promote this CVD reaction, the wafer 11 is heated from below the susceptor 10 by a heater 15, and a heater cover 13 is placed between the susceptor 10 and the susceptor 10 so that this heating is performed effectively and the reaction gas does not escape downward. surrounding the outside of
ところで、前記反応炉における従来のヒータカ
バー13は、加熱膨張による変形(皿状に反る。)
を回避するために、第2図に示すように、リング
を複数枚の弧状ピース16を環状に並べて形成さ
れている。 By the way, the conventional heater cover 13 in the reactor is deformed (warped into a dish shape) due to thermal expansion.
In order to avoid this, the ring is formed by arranging a plurality of arcuate pieces 16 in an annular shape, as shown in FIG.
しかしながら、このような従来のヒータカバー
にあつては、各ピース16を前記支持軸12に取
付けるための取付孔17が取合上余裕をもつて若
干大径に設定されているため、取付孔17を支持
軸12に嵌合してピース16を取付けたとき、取
付孔17の余裕により、隣り合うピース16,1
6相互が接近または離間し、リング状のヒータカ
バー全体において、大きな隙間18が形成されて
しまうという欠点があつた。このような隙間がで
きると、ヒータの熱が上方に逃げ、また反応ガス
が下方に逃げてしまうため、均質なCVD反応が
損なわれる。また、このような隙間の形成を避け
るためには、組付作業に過度の注意を払う必要が
あり、この組付作業は炉内清掃作業毎に度々実施
されるので、生産性の低下を招来する。 However, in such a conventional heater cover, the mounting holes 17 for mounting each piece 16 to the support shaft 12 are set to have a slightly larger diameter to provide a margin for mounting. When the piece 16 is fitted to the support shaft 12 and the piece 16 is attached, the adjacent pieces 16, 1
6 may approach or separate from each other, resulting in a large gap 18 being formed in the entire ring-shaped heater cover. When such a gap is created, the heat from the heater escapes upward and the reaction gas escapes downward, impairing a homogeneous CVD reaction. In addition, in order to avoid the formation of such gaps, it is necessary to pay excessive attention to the assembly work, and this assembly work is performed frequently every time the furnace is cleaned, resulting in a decrease in productivity. do.
本発明の目的は、前記従来技術の欠点を解消
し、大きな隙間を発生することなく、熱変形を防
止できるヒータカバーを備えた反応炉を提供する
にある。 SUMMARY OF THE INVENTION An object of the present invention is to eliminate the drawbacks of the prior art and provide a reactor equipped with a heater cover that can prevent thermal deformation without creating large gaps.
以下、本発明を図面に示す実施例にしたがつて
説明する。 The present invention will be described below with reference to embodiments shown in the drawings.
第3図は本発明による反応炉の一実施例を第1
図につき説明した一般的なCVD装置に適用した
場合につき示したベルジヤ3を取つた状態の平面
図である。 FIG. 3 shows a first embodiment of the reactor according to the present invention.
FIG. 3 is a plan view of a state in which a bell gear 3 is attached, which is shown when applied to the general CVD apparatus described with reference to the figures.
本実施例において、ヒータカバー20は耐熱性
を有する金属等の材料からリング形状に一体成形
されており、このカバー20には切欠部としての
切溝21がリングの内外縁において適当間隔をも
つて放射状にそれぞれ形成されている。また、こ
のカバー20の内外縁の間にはサセプタ10を嵌
合するための透孔14が所定数等間隔で環状に整
列されて穿設されており、各透孔14と干渉しな
い位置には支持軸への取付孔17が適数個穿設さ
れている。 In this embodiment, the heater cover 20 is integrally formed into a ring shape from a material such as a heat-resistant metal, and the cover 20 has grooves 21 as notches at appropriate intervals on the inner and outer edges of the ring. Each is formed radially. Further, a predetermined number of through holes 14 for fitting the susceptor 10 are arranged in a ring shape at equal intervals between the inner and outer edges of the cover 20, and the holes 14 are arranged in a ring at equal intervals. A suitable number of mounting holes 17 to the support shaft are drilled.
前記構成にかかるヒータカバー20を備えた反
応炉において、ヒータカバー20はヒータにより
加熱されると、熱源に近い裏側は温度が高く、熱
源から遠い表側(外周部)は温度が低くなるた
め、円周方向の伸びに加えて裏側から表側へ反ろ
うとする。しかし、本実施例のヒータカバー20
は内外縁に切溝21を放射状に形成されているの
で、この反り変形は切溝21に吸収され、熱的変
形による反りは発生しない。 In the reactor equipped with the heater cover 20 according to the above configuration, when the heater cover 20 is heated by the heater, the temperature is high on the back side near the heat source, and the temperature is low on the front side (outer periphery) far from the heat source. In addition to stretching in the circumferential direction, it also tries to warp from the back side to the front side. However, the heater cover 20 of this embodiment
Since the cut grooves 21 are radially formed on the inner and outer edges of the steel sheet, this warping deformation is absorbed by the cut grooves 21, and no warping due to thermal deformation occurs.
本実施例によれば、ヒータカバーを一体成形し
ても熱的変形を未然に防止することができるの
で、ヒータカバーを分割構造にする必要がなく、
製作が容易になるとともに、反応炉への組立作業
が位置合せ等の点で簡単になり、また、ヒータカ
バーの位置ずれの監視も省略可能になり、生産性
を向上させることができる。さらに、熱的変形を
膨張率を低下させて防止する構造ではないので、
破損し易い石英板等を使用せずに、金属等入手し
易い材料でヒータカバーを一体成形することが可
能であり、経済的に有利である。また、ヒータカ
バーは一体成形品であるから、組付誤差による大
きな隙間が発生することはなく、熱やガスの漏洩
現象の発生を未然に防止することができる。 According to this embodiment, thermal deformation can be prevented even if the heater cover is integrally molded, so there is no need to make the heater cover have a split structure.
Manufacturing becomes easier, the assembly work to the reactor becomes easier in terms of positioning, etc., and monitoring of the positional shift of the heater cover can be omitted, and productivity can be improved. Furthermore, it does not have a structure that prevents thermal deformation by reducing the expansion coefficient.
It is possible to integrally mold the heater cover from an easily available material such as metal without using a quartz plate or the like which is easily damaged, which is economically advantageous. Further, since the heater cover is an integrally molded product, large gaps due to assembly errors will not occur, and leakage of heat and gas can be prevented from occurring.
なお、第3図では便宜上、切欠部としての切溝
21を比較的大きい幅に図示しているが、切溝2
1の幅は熱的変形を吸収して防止可能な範囲で可
及的に小さい寸法にすべきである。なぜなら、大
き過ぎると、熱やガスの漏洩が発生するからであ
る。 Note that in FIG. 3, for convenience, the kerf 21 as a notch is shown to have a relatively large width, but the kerf 2
1 should be as small as possible within a range that can absorb and prevent thermal deformation. This is because if it is too large, heat and gas leakage will occur.
また、切欠部は前記実施例における切溝21に
限らず、第4図および第5図は底付の溝22,2
3でもよい。これら溝22,23でも熱的変形を
十分に吸収して反りを防止することが可能であ
り、かつ、これら溝22,23の場合には上下空
間を連通させる隙間は全くなく、したがつて、熱
やガスの漏洩が発生する危険性もなくなる。ちな
みに、第4図の溝22は底部が内縁から外縁にか
けて深くなるように傾斜されており、第5図の溝
23は底部が一定深さに形成されている。 Further, the notch is not limited to the cut groove 21 in the above embodiment, but in FIGS. 4 and 5, the grooves 22 and 2 with the bottom are
3 is fine. These grooves 22 and 23 can also sufficiently absorb thermal deformation and prevent warping, and in the case of these grooves 22 and 23, there is no gap that communicates the upper and lower spaces, so that There is also no risk of heat or gas leaks. Incidentally, the groove 22 shown in FIG. 4 is inclined so that the bottom becomes deeper from the inner edge to the outer edge, and the groove 23 shown in FIG. 5 is formed to have a constant depth at the bottom.
なお、本発明はCVD装置の反応炉に限らず、
真空蒸着装置、エピタキシヤル装置、ドライエツ
チング装置等の反応炉全般に適用することができ
る。 Note that the present invention is not limited to reactors of CVD equipment;
It can be applied to general reaction furnaces such as vacuum evaporation equipment, epitaxial equipment, and dry etching equipment.
以上説明したように、本発明によれば、ヒータ
カバーの熱的変形を防止することができるととも
に、ヒータカバーにおける隙間の発生を防止する
ことができる。 As described above, according to the present invention, it is possible to prevent thermal deformation of the heater cover, and also to prevent the generation of gaps in the heater cover.
第1図は一般的なCVD装置を示す縦断面図、
第2図は従来例のヒータカバーを示す平面図、第
3図は本発明による反応炉の一実施例を示す平面
図、第4図および第5図は切欠部の変形例をそれ
ぞれ示す各部分斜視図である。
1……反応炉、2……本体、3……ベルジヤ、
4……支柱、5……中間べース、6……スタン
ド、7……バツフア、8……ターンテーブル、9
……支持軸、10……サセプタ、11……ウエ
ハ、12……支持軸、14……透孔、15……ヒ
ータ、20……ヒータカバー、21……切溝、2
2,23……底付溝。
Figure 1 is a longitudinal cross-sectional view of a typical CVD device.
FIG. 2 is a plan view showing a conventional heater cover, FIG. 3 is a plan view showing an embodiment of the reactor according to the present invention, and FIGS. 4 and 5 are parts showing modified examples of the notch. FIG. 1...Reactor, 2...Main body, 3...Berjia,
4... Strut, 5... Intermediate base, 6... Stand, 7... Bumper, 8... Turntable, 9
... Support shaft, 10 ... Susceptor, 11 ... Wafer, 12 ... Support shaft, 14 ... Through hole, 15 ... Heater, 20 ... Heater cover, 21 ... Cut groove, 2
2, 23... Bottom groove.
Claims (1)
タをリング形状をなすヒータカバーに環状に配列
して形成した複数の透孔内にそれぞれ位置せしめ
た反応炉において、前記ヒータカバーを一体成形
するとともに、前記リング形状のヒータカバーの
前記複数の透孔間に前記ヒータカバーの外縁およ
び内縁それぞれから突出して互いに対向する切溝
部を前記ヒータカバーのリング形状に沿つて放射
状に複数形成したことを特徴とする反応炉。1. In a reactor in which a plurality of reactant susceptors revolving around the reactor core are arranged in a ring shape in a ring-shaped heater cover and are respectively positioned in a plurality of through holes formed, the heater cover is integrally molded and , a plurality of cut grooves protruding from each of an outer edge and an inner edge of the heater cover and facing each other are formed radially between the plurality of through holes of the ring-shaped heater cover along the ring shape of the heater cover. reactor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2482583A JPS59151418A (en) | 1983-02-18 | 1983-02-18 | Reaction oven |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2482583A JPS59151418A (en) | 1983-02-18 | 1983-02-18 | Reaction oven |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59151418A JPS59151418A (en) | 1984-08-29 |
JPH0478003B2 true JPH0478003B2 (en) | 1992-12-10 |
Family
ID=12148953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2482583A Granted JPS59151418A (en) | 1983-02-18 | 1983-02-18 | Reaction oven |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59151418A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63157425A (en) * | 1986-12-22 | 1988-06-30 | Hitachi Electronics Eng Co Ltd | Vapor phase reaction equipment |
JPS63176474A (en) * | 1987-01-14 | 1988-07-20 | Hitachi Electronics Eng Co Ltd | Gaseous phase reactor |
JP5997952B2 (en) * | 2012-07-06 | 2016-09-28 | 大陽日酸株式会社 | Vapor growth equipment |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5748851A (en) * | 1980-09-08 | 1982-03-20 | Goda Tadayoshi | Display device for calling number of telephone set |
-
1983
- 1983-02-18 JP JP2482583A patent/JPS59151418A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5748851A (en) * | 1980-09-08 | 1982-03-20 | Goda Tadayoshi | Display device for calling number of telephone set |
Also Published As
Publication number | Publication date |
---|---|
JPS59151418A (en) | 1984-08-29 |
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