JPS59151418A - Reaction oven - Google Patents

Reaction oven

Info

Publication number
JPS59151418A
JPS59151418A JP2482583A JP2482583A JPS59151418A JP S59151418 A JPS59151418 A JP S59151418A JP 2482583 A JP2482583 A JP 2482583A JP 2482583 A JP2482583 A JP 2482583A JP S59151418 A JPS59151418 A JP S59151418A
Authority
JP
Japan
Prior art keywords
cover
heater cover
heater
ring
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2482583A
Other languages
Japanese (ja)
Other versions
JPH0478003B2 (en
Inventor
Kazuo Taniguchi
谷口 和雄
Yukio Murakawa
幸雄 村川
Akira Yoshida
明 吉田
Shozo Hosoda
細田 正蔵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi High Tech Corp
Original Assignee
Hitachi Ltd
Hitachi Electronics Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Electronics Engineering Co Ltd filed Critical Hitachi Ltd
Priority to JP2482583A priority Critical patent/JPS59151418A/en
Publication of JPS59151418A publication Critical patent/JPS59151418A/en
Publication of JPH0478003B2 publication Critical patent/JPH0478003B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Abstract

PURPOSE:To prevent thermal deformation in spite of unitary molding without dividing the heater cover by a method wherein when the annular heater cover covers plural suscepters revolving around the core of the oven, plural cut grooves facing mutually are cut in a radial form on inside and outside edges of the cover and transparent holes which the suscepters fit in are arranged in uniform intervals among said grooves. CONSTITUTION:A heater 15 of ring-shape is arranged around a reaction oven 1 and a vertical supporting shaft 9 comprising a suscepter 10 on its upper part revolves along an annular path arranged in the center of said ring itself and a semiconductor wafer 11 put on the suscepter 10 is covered with a heater cover 13. Then the predetermined reaction treatment is performed. In this constitution, a heater cover 20 shown in the figure which corresponds to the cover 13 is formed to be ring-shape with using one sheet of heat-resistant metal and is provided with plural cut grooves 21 arranged in a radial form on its inside and outside edges while facing mutually. Also plural transparent holes 14 which the suscepters 10 fit in are opened among the grooves 21 and the cover 20 is fixed to the supporting shaft 9 using fitting holes 17.

Description

【発明の詳細な説明】 本発明は、化学的蒸着(CVD)装置等の反応炉に関す
る。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to reactors such as chemical vapor deposition (CVD) devices.

従来のCVD装置の反応炉どして、例えば第1図に示す
ようなもの嬢ある。
For example, there is a reactor for a conventional CVD apparatus as shown in FIG.

この反応炉1は、上面開口の円筒体番なす本体2と、本
体2の上面に着脱自在に被蓋されたベルジャ3と、炉心
である本体2の中心に立設された支柱4と、この支柱4
に水平に支持された中間ペース5と、ペース上に立設さ
れたスタンド6の上端に着脱自在に支持されたバッファ
7と1本体2の一面上に公転するように設備されたター
ンチージル8と、ターンテーブル8に自転するように′
直角に軸支された複数本の支持軸9と、各軸9の上端に
固着されてウェハ11を保持するサセプタ10ど、前記
支持軸9とは別の複数の支持軸12に支持され、サセプ
タ10を囲繞するように嵌合する複数のi孔14を有す
るリング状のヒータカバー13と、ヒータカバー13の
下方に環状に敷設された□ビー15とから、大略構成さ
れている。
This reactor 1 consists of a main body 2 having a cylindrical shape with an open top surface, a bell jar 3 removably covered on the top surface of the main body 2, a support 4 erected at the center of the main body 2 which is a reactor core, and Pillar 4
An intermediate pace 5 supported horizontally on the pace, a buffer 7 detachably supported on the upper end of a stand 6 erected on the pace, and a turn teasel 8 installed to revolve on one surface of the main body 2; Rotate on turntable 8'
A plurality of support shafts 9 are supported at right angles, and a susceptor 10 is fixed to the upper end of each shaft 9 to hold a wafer 11. It is generally composed of a ring-shaped heater cover 13 having a plurality of i-holes 14 that fit so as to surround the heater cover 10 , and a square bead 15 laid in an annular shape below the heater cover 13 .

そして、各サセプ月0は自転しなから梁体2の内周壁と
バッファ7の外縁辺との間で炉心の周りを公転し、この
自公転によシ、サセプタ10上のウェハ11に始する拘
置なCVD反応を確保するようにしてaる。また、との
CVD反応を促進するため、ウェハ11はサセプタ10
の下からヒータ15で加熱され、この加熱が有効に行な
われるように、かつ反応ガスが下方に逃散しないように
ヒータカバー13力“けセプタ10の外部を囲繞してい
る。
Each susceptor 0 does not rotate, but revolves around the core between the inner circumferential wall of the beam body 2 and the outer edge of the buffer 7, and due to this rotation, the susceptor 10 starts from the wafer 11 on the susceptor 10. Try to ensure a consistent CVD response. Further, in order to promote the CVD reaction with the susceptor 10, the wafer 11
It is heated from below by a heater 15, and a heater cover 13 surrounds the outside of the septum 10 to ensure effective heating and to prevent the reaction gas from escaping downward.

ところで、前記反応炉における従来のヒータカバー13
は、加熱膨張による変形(皿状に反る。)を回避するた
めに1第2図に示すように、リングを複数枚の弧状ピー
ス16を環状に並ぺて形成されている。
By the way, the conventional heater cover 13 in the reactor
In order to avoid deformation (warping into a dish shape) due to thermal expansion, the ring is formed by arranging a plurality of arc-shaped pieces 16 in an annular shape, as shown in FIG.

しかしながら、このような従来−のヒータカバーにふっ
ては、各ピース16を前記支持軸12に取付けるための
取付孔17が取合上余裕をもって若干大径に設定されて
いるため、取付孔17を支持軸12に嵌合してピース1
6を取付けたとき、取付孔17の余裕によシ、隣シ合う
ピース16.16相互が接近または離間し、リング状の
ヒータカバー全体において、大きな隙間18が形成され
てしまうという欠点があった。このような隙間ができる
と、ヒータの熱が上方に逃げ、また反応ガスが下方に逃
げてしまうため、均質なCVD反応が損なわれる。また
、このような隙間の形成を避けるためには1組付作業に
過度の注意を払う必要があシ、この組付作業は炉内清掃
作業毎に度々実施されるので、生産性の低下を招来する
However, in such conventional heater covers, the mounting holes 17 for mounting each piece 16 to the support shaft 12 are set to have a slightly larger diameter to allow for a margin for mounting. Piece 1 is fitted onto the support shaft 12.
6, the adjacent pieces 16 and 16 may approach or separate from each other due to the allowance of the mounting hole 17, resulting in a large gap 18 being formed in the entire ring-shaped heater cover. . When such a gap is created, the heat of the heater escapes upward and the reaction gas escapes downward, impairing a homogeneous CVD reaction. In addition, in order to avoid the formation of such gaps, it is necessary to pay excessive attention to each assembly operation, and since this assembly operation is performed frequently every time the furnace is cleaned, it may reduce productivity. Invite.

本発明の目的は、前記従来技術の欠点を解消し、大きな
隙間を発生することなく、熱変形を防止できるヒータカ
バーを備えた反応炉を提供するにある。
SUMMARY OF THE INVENTION An object of the present invention is to eliminate the drawbacks of the prior art and provide a reactor equipped with a heater cover that can prevent thermal deformation without creating large gaps.

以下、本発明を図面に示す実施例にしたがって説明する
Hereinafter, the present invention will be explained according to embodiments shown in the drawings.

第3図は本発明による反応炉の一実施岡を第1図につき
説明した一般的なCVD装置に適用した場合につき示し
たベルジャ3を取った状態の平面図である。
FIG. 3 is a plan view of an embodiment of the reactor according to the present invention, with the bell jar 3 removed, showing the case where the reactor according to the present invention is applied to the general CVD apparatus described with reference to FIG.

本実施例において、ヒータカバー20は耐熱性を有する
金属等の材料からリング形状に一体成形されており、こ
のカバー20には切欠部としての切溝21がリングの内
外縁において適当間隔をもって放射状にそれぞれ形成さ
れている。また、このカバー20の内外縁の間にはサセ
プタ10を嵌合するための透孔14が所定数等間隔で環
状に整列されて穿設されておシ、各透孔14と干渉しな
い位置には支持軸への取付孔17が適数個穿設されてい
る。
In this embodiment, the heater cover 20 is integrally molded into a ring shape from a material such as a heat-resistant metal, and the cover 20 has cut grooves 21 radially arranged at appropriate intervals on the inner and outer edges of the ring. each formed. Further, a predetermined number of through holes 14 for fitting the susceptor 10 are arranged in a ring shape at equal intervals between the inner and outer edges of the cover 20, and are arranged at positions that do not interfere with the through holes 14. A suitable number of mounting holes 17 to the support shaft are drilled.

前記構成にかかるヒータカバー20を備えた反応炉にお
いて、ヒータカバー20はヒータによシ加熱されると、
熱源に近い裏側は温度が高く、熱源から遠い表側(外周
部)は温度が低くなるため。
In the reactor equipped with the heater cover 20 according to the above configuration, when the heater cover 20 is heated by the heater,
The temperature is higher on the back side, which is closer to the heat source, and the temperature is lower on the front side (outer area), which is farther from the heat source.

円周方向の伸びに加えて裏側から表側へ埠ろうとする。In addition to elongation in the circumferential direction, it attempts to expand from the back side to the front side.

しかし1本実施例のヒータカバー20は内外縁に切、溝
21を放射状に形成されているので、この反り変形は切
溝21に吸収され、熱的変形による反りは発生しない。
However, since the heater cover 20 of this embodiment has grooves 21 cut in the inner and outer edges in a radial manner, this warping deformation is absorbed by the cut grooves 21, and warping due to thermal deformation does not occur.

本実施例によれば、ヒータカバーを一体成形しても熱的
変形を未然に防止することができるので、ヒータカバー
を分割構造にする必要がなく、製作が容易になるととも
に1反応炉への組立作業が位置合せ等の点で簡単になシ
、マた、ヒータカバーの位置ずれの監視も省略可能にな
シ、生産性を向上させることができる。さらに、熱的変
形を膨張率を低下させて防止する構造ではないので、破
損し易い石英板等を使用せずK、金属等入手し易い材料
でヒータカバ7を一体成形することが可能であシ、経済
的に有利である。また、ヒータカバーは一体成形品であ
るから、組付誤差圧よる大きな隙間が発生することはな
く、熱やガスの漏洩現象の発生を未然に防止することが
できる。
According to this example, thermal deformation can be prevented even if the heater cover is integrally molded, so there is no need for the heater cover to have a separate structure, which simplifies production and allows for the installation of one reactor into a single reactor. Assembling work is simplified in terms of alignment, etc., and monitoring of misalignment of the heater cover and heater cover can be omitted, and productivity can be improved. Furthermore, since the structure does not prevent thermal deformation by reducing the coefficient of expansion, it is possible to integrally mold the heater cover 7 from readily available materials such as K and metal without using easily damaged quartz plates. , economically advantageous. Further, since the heater cover is an integrally molded product, large gaps due to assembly error pressure are not generated, and leakage of heat and gas can be prevented from occurring.

碌お、第3図では便宜上、切欠部としての切溝21を比
較的大きい幅に図示しているが、切溝21の幅は熱的変
形を吸収して防止可能な範囲で可及的に小さい寸法にす
べきである。なぜなら、大き過ぎると、熱やガスの漏洩
が発生するからである。
In Figure 3, for convenience, the notch 21 is shown to have a relatively large width, but the width of the notch 21 is set as wide as possible within the range that can absorb and prevent thermal deformation. Should be of small size. This is because if it is too large, heat and gas leakage will occur.

また、切欠部は前記実施例における切溝21に限らず、
第4図および第5図は庭付の溝22.23でもよい。こ
れら溝22.23でも熱的変形を十分に吸収して反応を
防止することが可能であり。
Further, the notch is not limited to the cut groove 21 in the above embodiment,
4 and 5 may be garden ditches 22, 23. These grooves 22 and 23 can also sufficiently absorb thermal deformation and prevent reactions.

かつ、これら溝22.23の場合には上下空間を連通さ
せる隙間は全くなく、したがって、熱やガスの漏洩が発
生する危険性もなくなる。ちなみに、第4図の溝22は
底部が内縁から外縁にかけて深くなるように傾斜されて
おシ、第5図の溝23は底部が一定深さに形成されてい
る。
In addition, in the case of these grooves 22 and 23, there is no gap that communicates the upper and lower spaces, and therefore there is no risk of heat or gas leakage. Incidentally, the groove 22 shown in FIG. 4 has a sloped bottom so that it becomes deeper from the inner edge to the outer edge, and the groove 23 shown in FIG. 5 has a bottom formed at a constant depth.

なお、本発明はCVD装置の反応炉に限らず。Note that the present invention is not limited to the reactor of a CVD apparatus.

真空蒸着装置、エビ、タキシャル装置、ドライエッチン
グ装置等の反応炉全般に適用することができる。
It can be applied to general reactors such as vacuum evaporation equipment, vacuum deposition equipment, taxial equipment, dry etching equipment, etc.

以上説明したように1本発明によれば、ヒータカバーの
熱的変形を防止することができるとともに、ヒータカバ
ーにおける隙間の発生を防止することができる。
As explained above, according to the present invention, it is possible to prevent thermal deformation of the heater cover, and also to prevent the generation of gaps in the heater cover.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は一般的なCVD装置を示す縦断面図、第2図は
従来例のヒータカバーを示す平面図。 第3図は本発明による反応炉の一実施例を示す平面図。 第4図および第5図は切欠部の変形例をそれぞれ示す各
部分斜視図である。 1・・・反応炉、2・・・本体、3・・・ベルジャ、4
・・・支柱、5・・・中間ペース、6・・・スタンド、
7・・・バッファ、8・・・ターンテーブル、9・・・
支持軸、10・・・サセプタ、11・・・ウェハ、12
・・・支持軸%14・・・透孔、15・・・ヒータ、2
0・・・ヒータ力/(−,21・・・切溝、22.23
・・・庇付溝。 第  1  図
FIG. 1 is a vertical sectional view showing a general CVD apparatus, and FIG. 2 is a plan view showing a conventional heater cover. FIG. 3 is a plan view showing an embodiment of the reactor according to the present invention. FIGS. 4 and 5 are partial perspective views showing modified examples of the notch, respectively. 1... Reactor, 2... Main body, 3... Belljar, 4
... Prop, 5... Intermediate pace, 6... Stand,
7...Buffer, 8...Turntable, 9...
Support shaft, 10... Susceptor, 11... Wafer, 12
...Support shaft %14...Through hole, 15...Heater, 2
0... Heater force/(-, 21... Cut groove, 22.23
...Gutter with eaves. Figure 1

Claims (1)

【特許請求の範囲】[Claims] 1、炉心の周シを公転する複数の被反応物サセプタをリ
ング形状をなすヒータカバーに環状に配列して形成した
複数の透孔内にそれぞれ位置せしめた反応炉において、
前記ヒータカバーを一体成形するとともに、リングの外
縁゛および内縁に切欠部を放射状に適数条形成したこと
を特徴とする反応炉。
1. In a reactor in which a plurality of reactant susceptors that revolve around the circumference of the reactor core are arranged in a ring shape in a ring-shaped heater cover and are respectively positioned in a plurality of through holes formed.
A reactor characterized in that the heater cover is integrally molded and a suitable number of notches are formed radially on the outer edge and inner edge of the ring.
JP2482583A 1983-02-18 1983-02-18 Reaction oven Granted JPS59151418A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2482583A JPS59151418A (en) 1983-02-18 1983-02-18 Reaction oven

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2482583A JPS59151418A (en) 1983-02-18 1983-02-18 Reaction oven

Publications (2)

Publication Number Publication Date
JPS59151418A true JPS59151418A (en) 1984-08-29
JPH0478003B2 JPH0478003B2 (en) 1992-12-10

Family

ID=12148953

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2482583A Granted JPS59151418A (en) 1983-02-18 1983-02-18 Reaction oven

Country Status (1)

Country Link
JP (1) JPS59151418A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63157425A (en) * 1986-12-22 1988-06-30 Hitachi Electronics Eng Co Ltd Vapor phase reaction equipment
JPS63176474A (en) * 1987-01-14 1988-07-20 Hitachi Electronics Eng Co Ltd Gaseous phase reactor
JP2014017290A (en) * 2012-07-06 2014-01-30 Taiyo Nippon Sanso Corp Susceptor and vapor phase growth device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5748851A (en) * 1980-09-08 1982-03-20 Goda Tadayoshi Display device for calling number of telephone set

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5748851A (en) * 1980-09-08 1982-03-20 Goda Tadayoshi Display device for calling number of telephone set

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63157425A (en) * 1986-12-22 1988-06-30 Hitachi Electronics Eng Co Ltd Vapor phase reaction equipment
JPS63176474A (en) * 1987-01-14 1988-07-20 Hitachi Electronics Eng Co Ltd Gaseous phase reactor
JP2014017290A (en) * 2012-07-06 2014-01-30 Taiyo Nippon Sanso Corp Susceptor and vapor phase growth device

Also Published As

Publication number Publication date
JPH0478003B2 (en) 1992-12-10

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