JPH0476501B2 - - Google Patents

Info

Publication number
JPH0476501B2
JPH0476501B2 JP60103950A JP10395085A JPH0476501B2 JP H0476501 B2 JPH0476501 B2 JP H0476501B2 JP 60103950 A JP60103950 A JP 60103950A JP 10395085 A JP10395085 A JP 10395085A JP H0476501 B2 JPH0476501 B2 JP H0476501B2
Authority
JP
Japan
Prior art keywords
ultrasonic
bonding
wire
wire bonding
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60103950A
Other languages
Japanese (ja)
Other versions
JPS61263233A (en
Inventor
Hisaya Suzuki
Makoto Arie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Mechatronics Co Ltd
Original Assignee
Toshiba Seiki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Seiki Co Ltd filed Critical Toshiba Seiki Co Ltd
Priority to JP60103950A priority Critical patent/JPS61263233A/en
Publication of JPS61263233A publication Critical patent/JPS61263233A/en
Publication of JPH0476501B2 publication Critical patent/JPH0476501B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1016—Shape being a cuboid
    • H01L2924/10162—Shape being a cuboid with a square active surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、超音波ワイヤボンデイング装置に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an ultrasonic wire bonding apparatus.

［従来の技術］ 従来、例えばIC、LSI等の製造は、先ずリード
フレームのアイランド部に半導体ペレツトを接合
し、次いで半導体ペレツト表面の電極パツトとリ
ードフレームのリード端子とをAu線等のワイヤ
によりワイヤボンデイングして行なわれる。ワイ
ヤボンデイングの行なわれたリードフレームは、
該ボンデイング部分に対して樹脂封止がが行なわ
れ、樹脂封止の行なわれたリードフレームは各チ
ツプごとに切断し、分離される。この結果、複数
の接続端子を備えたチツプエ状のICまたはLSIが
製造されることとなる。[Prior art] Conventionally, for example, in the manufacture of ICs, LSIs, etc., semiconductor pellets are first bonded to the island portion of a lead frame, and then electrode pads on the surface of the semiconductor pellet and lead terminals of the lead frame are connected using wires such as Au wires. This is done by wire bonding. The lead frame with wire bonding is
Resin sealing is performed on the bonding portion, and the resin-sealed lead frame is cut into individual chips and separated. As a result, a chip-shaped IC or LSI with a plurality of connection terminals is manufactured.

ペレツト表面の電極パツドとリードフレームの
リード端子との間のワイヤボンデイングには、例
えば、超音波ワイヤボンデイング装置が用いられ
る。超音波ワイヤボンデイング装置は、超音波を
出力可能とする超音波発振回路と、超音波発振回
路より出力される超音波により振動されるトラン
スジユーサと、トランスジユーサに配設され、所
定のボンデイング部間、例れば電極パツドとリー
ド端子間をワイヤボンデイング可能とするボンデ
イングツールとを備えている。超音波ワイヤボン
デイング装置によるワイヤボンデイングは、振動
されるトランスジユーサによりボンデイングツー
ルを振動させ、ボンデイングツールに供給され、
かつ電極パツドやリード端子等のボンデイング部
に押圧状態で接触させるワイヤを該超音波振動に
よりボンデイング部に対して摩擦圧接するように
して行なわれる。すなわち、ボンデイングツール
によるワイヤボンデイングは、該ツールに供給さ
れるワイヤの先端部を例えば電極パツドに圧接
し、次いで該ワイヤの所定部をリード端子に圧接
して電極パツドとリード端子との間を該ワイヤに
より接続して行なわれる。ボンデイングツールに
供給され、ワイヤボンデイングの行なわれたワイ
ヤは、リード端子の圧接部分で切断され、切断さ
れたワイヤの先端部は次にボンデイングを行なう
電極パツドに対し圧接するようにしている。この
ようにして、超音波ワイヤボンデイング装置によ
り、対応する電極パツドとリード端子間が順次ワ
イヤボンデイングされることとなる。 For example, an ultrasonic wire bonding device is used for wire bonding between the electrode pads on the surface of the pellet and the lead terminals of the lead frame. The ultrasonic wire bonding device includes an ultrasonic oscillation circuit that can output ultrasonic waves, a transducer that is vibrated by the ultrasonic waves output from the ultrasonic oscillation circuit, and a transducer that is installed in the transducer to perform a predetermined bonding process. The device is equipped with a bonding tool that enables wire bonding between parts, for example, between electrode pads and lead terminals. In wire bonding using an ultrasonic wire bonding device, the bonding tool is vibrated by a vibrating transducer, and the wire is supplied to the bonding tool.
In addition, a wire that is pressed into contact with a bonding part such as an electrode pad or a lead terminal is brought into friction pressure contact with the bonding part by the ultrasonic vibration. That is, in wire bonding using a bonding tool, the tip of a wire supplied to the tool is pressed against, for example, an electrode pad, and then a predetermined portion of the wire is pressed against a lead terminal to connect the wire between the electrode pad and the lead terminal. This is done by connecting with wires. The wire supplied to the bonding tool and subjected to wire bonding is cut at the pressure contact portion of the lead terminal, and the tip of the cut wire is brought into pressure contact with the electrode pad to be bonded next. In this way, the ultrasonic wire bonding apparatus sequentially wire-bonds the corresponding electrode pads and lead terminals.

ところで、従来の超音波ワイヤボンデイング装
置は、例えば特公昭57−9494や特開昭55−120145
に示すように超音波発振回路より出力される超音
波出力値を制御可能とする制御手段を設けるよう
にしている。この制御手段は、ボンデイング部の
材質やボンデイング部に対するワイヤの押圧時に
生ずる負荷に応じた超音波振動エネルギーを該超
音波発振回路から出力制御可能とし、ボンデイン
グ部に対する良好なボンデイング状態を得ること
を可能としている。 By the way, conventional ultrasonic wire bonding equipment is known from, for example, Japanese Patent Publication No. 57-9494 and Japanese Patent Application Laid-open No. 55-120145.
As shown in FIG. 2, a control means is provided which can control the ultrasonic output value output from the ultrasonic oscillation circuit. This control means makes it possible to control the output of ultrasonic vibration energy from the ultrasonic oscillation circuit according to the material of the bonding part and the load generated when the wire is pressed against the bonding part, thereby making it possible to obtain a good bonding state for the bonding part. It is said that

［発明が解決しようとする問題点］ しかしながら、上記従来の超音波ワイヤボンデ
イング装置における制御手段は、超音波発振回路
より出力される超音波出力波形の定常出力値をそ
れぞれ可変に制御することができるものの、各超
音波出力波形の定常出力値に至る立上り時間は常
時一定のものとされていた。このため、ボンデン
イング部の材質によつては、定常出力値に至る立
上り時間は急激となり、このため、ボンデイング
部表面を剥離したり、またボンデイング部にクロ
ツクを生じさせる等のダメージを生じさせること
が考えられる。また、ボンデイング部やワイヤの
材質などによつては、立上り時間が長すぎるこ
と、または短かすぎることによつてワイヤボンデ
イング部の接合強度が低下する場合が考えられ
る。さらに、立上り時間は、ボンデイングを行な
うワイヤ先端のボール形状の大きさ等に重要な影
響を与え、例えば立上り時間が長すぎるためにボ
ール形状が大きくなりすぎ、圧接されたワイヤが
ボンデイング部よりはみ出す等の不具合も考えら
れる。[Problems to be Solved by the Invention] However, the control means in the conventional ultrasonic wire bonding apparatus described above is capable of variably controlling the steady output value of the ultrasonic output waveform output from the ultrasonic oscillation circuit. However, the rise time for each ultrasonic output waveform to reach a steady output value was always constant. For this reason, depending on the material of the bonding part, the rise time to reach a steady output value may be rapid, which may cause damage such as peeling off the surface of the bonding part or causing clocks in the bonding part. is possible. Furthermore, depending on the material of the bonding part and the wire, if the rise time is too long or too short, the bonding strength of the wire bonding part may be reduced. Furthermore, the rise time has an important effect on the size of the ball shape at the tip of the wire to be bonded. For example, if the rise time is too long, the ball shape becomes too large, causing the wire that has been pressed to protrude from the bonding part. There may also be a problem with this.

本発明は、各ボンデイング部に対するワイヤボ
ンデインをボンデイング部の材質、ワイヤの材質
等に応じて適正な接合強度、安定したボール形状
で安全かつ確実に行なうことを目的としている。 An object of the present invention is to safely and reliably perform wire bonding for each bonding part with appropriate bonding strength and stable ball shape depending on the material of the bonding part, the material of the wire, etc.

［問題点を解決するための手段］ 上記目的を達成するために、本発明は、超音波
を出力可能とする超音波発振回路と、超音波発振
回路より出力される超音波により振動されるトラ
ンスジユーサと、トランスジユーサに配設され、
所定のボンデイング部間をワイヤボンデイング可
能とするボンデイングツールと、を備えてなる超
音波ワイヤボンデイング装置において、上記超音
波発振回路に、超音波出力波形の定常出力値に至
る立上り時間を調整可能とする立上り調整手段を
設けることとしている。[Means for Solving the Problems] In order to achieve the above object, the present invention provides an ultrasonic oscillation circuit capable of outputting ultrasonic waves, and a transformer vibrated by the ultrasonic waves output from the ultrasonic oscillation circuit. arranged in the transducer and the transducer,
An ultrasonic wire bonding apparatus comprising: a bonding tool that enables wire bonding between predetermined bonding parts, in which the ultrasonic oscillation circuit is capable of adjusting the rise time of the ultrasonic output waveform until it reaches a steady output value. A rise adjustment means is provided.

［作用］ 本発明によれば、立上り調整手段の調整によ
り、ボンデイング部の材質、ワイヤの材質等に応
じた最良のボンデイング状態を与える立上り時間
を設定することが可能となり、これにより、各ボ
ンデイング部に対するワイヤボンデイングを適正
な接合強度、安定したボール形状で安全かつ確実
に行なうことが可能となる。[Function] According to the present invention, by adjusting the rise adjustment means, it is possible to set the rise time that provides the best bonding condition depending on the material of the bonding part, the material of the wire, etc. It becomes possible to perform wire bonding safely and reliably with appropriate bonding strength and stable ball shape.

［実施例］ 以下、本発明の実施例を図面を参照して説明す
る。[Example] Hereinafter, an example of the present invention will be described with reference to the drawings.

第１図は本発明の一実施例に係る超音波ワイヤ
ボンデイング装置の回路図、第２図は超音波ワイ
ヤボンデイング装置によりワイヤボンデイングす
る状態を示す斜視図、第３図は第２図の−線
に沿う矢視図、第４図Ａ〜Ｄ第１図に示す回路図
の各部における信号の波形図である。 Fig. 1 is a circuit diagram of an ultrasonic wire bonding device according to an embodiment of the present invention, Fig. 2 is a perspective view showing a state in which wire bonding is carried out by the ultrasonic wire bonding device, and Fig. 3 is a line drawn along the - line in Fig. 2. 4A to 4D are waveform diagrams of signals at various parts of the circuit diagram shown in FIG. 1;

超音波ワイヤボンデイング装置１０は、IC製
造用のものとされ、第１図に示すようにXY方向
の所定位置に供給され、位置決めされるリードフ
レーム１１に対してワイヤボンデイングを行なう
こととしている。すなわち、ワイヤボンデイング
は、リードフレーム１１のアイランド部１２に接
合された半導体ペレツト１３のうち、周部表面に
それぞれ設けられる各電極パツド１４とリードフ
レーム１１の対応するリード端子１５をAu線等
のワイヤ１６により接続して行なうようにしてい
る。超音波ワイヤボンデイング装置１０は、第３
図に示すように超音波発振回路１７を備えてな
り、該回路１７は、超音波を出力可能としてい
る。超音波発振回路１７から出力される超音波
は、トランジユーサ１８に対し加えられ、これに
よりトランスジユーサ１８は矢示Ｙ方向に機械的
な超音波振動を起こすようにしている。さらにト
ランスジユーサ１８にはホーン１９が取着され、
該ホーン１９の先端部にはボンデイングツールと
してのキヤピラリ２０が取着される。キヤピラリ
２０はトランスジユーサ１８の振動に基づくホー
ン１９の振動により、矢示Ｙ方向に振動される。
キヤピラリ２０には、スプール２１に巻回される
ワイヤ１６の一端が供給され、キヤピラリ２０に
よりワイヤボンデイングは、キヤピラリ２０を対
応する電極パツド１４とリード端子１５との間を
移動させて行なわれる。すなわち、キヤピラリ２
０は、各位置で供給されるワイヤ１６を超音波振
動により摩擦圧接し、これにより該電極パツド１
４を対応するリード端子１５との間をワイヤ１６
を介して接続するようにしている。 The ultrasonic wire bonding apparatus 10 is used for IC manufacturing, and as shown in FIG. 1, is supplied to a predetermined position in the XY direction and performs wire bonding on a lead frame 11 that is positioned. That is, in wire bonding, each electrode pad 14 provided on the surface of the peripheral portion of the semiconductor pellet 13 bonded to the island portion 12 of the lead frame 11 and the corresponding lead terminal 15 of the lead frame 11 are bonded with wires such as Au wires. 16 is used for connection. The ultrasonic wire bonding device 10 has a third
As shown in the figure, an ultrasonic oscillation circuit 17 is provided, and the circuit 17 is capable of outputting ultrasonic waves. The ultrasonic waves output from the ultrasonic oscillation circuit 17 are applied to the transducer 18, thereby causing the transducer 18 to mechanically vibrate in the Y direction. Further, a horn 19 is attached to the transducer 18,
A capillary 20 as a bonding tool is attached to the tip of the horn 19. The capillary 20 is vibrated in the Y direction by the vibration of the horn 19 based on the vibration of the transducer 18.
One end of the wire 16 wound around a spool 21 is supplied to the capillary 20, and wire bonding is performed by moving the capillary 20 between the corresponding electrode pad 14 and lead terminal 15. That is, capillary 2
0 frictionally welds the wire 16 supplied at each position by ultrasonic vibration, thereby forming the electrode pad 1.
4 and the corresponding lead terminal 15 through the wire 16.
I'm trying to connect via .

トランスジユーサ１８に所定の超音波を発振可
能とする超音波発振回路１７は、第４図Ａに示す
ような一定振幅の超音波Ａを発振可能とする超音
波発振器２２を備えてなる。超音波発振器２２よ
り発振される超音波Ａは、乗算器２３に対して出
力され、該乗算器２３は積分器２４側から出力さ
れる発振信号Ｂと上記超音波Ａとを乗算し、この
結果得られる出力波Ｃを電力増幅器２５に対し出
力可能としている。さらに電力増幅器２５は、入
力される乗算器２３の出力波Ｃを所定の増幅率Ｇ
をもつて増幅し、これにより該増幅された状態の
超音波Ｄをトランスジユーサ１８に出力するよう
にしている。電力増幅器２５における増幅率Ｇの
制定は、ボンデイング部としての電極パツド１４
やリード端子１５の表面の材質あるいは該ボンデ
イング部に対するワイヤ１６の押圧時に生ずるキ
ヤピラリ２０の負荷抵抗等に基づき可変に行なわ
れる。このため、キヤピラリ２０における超音波
振動の状態が不図示の制御手段により電極増幅器
２５にフイードバツクされ、さらに制御手段はフ
イードバツクされたキヤピラリ２０の振動状態や
電極パツド１４の材質等に基づき増幅率Ｇを可変
に設定するようにしている。 The ultrasonic oscillation circuit 17 that enables the transducer 18 to oscillate a predetermined ultrasonic wave includes an ultrasonic oscillator 22 that is able to oscillate an ultrasonic wave A of a constant amplitude as shown in FIG. 4A. The ultrasonic wave A generated by the ultrasonic oscillator 22 is output to a multiplier 23, and the multiplier 23 multiplies the oscillation signal B output from the integrator 24 side by the ultrasonic wave A, and the result is The resulting output wave C can be output to the power amplifier 25. Further, the power amplifier 25 converts the input output wave C of the multiplier 23 into a predetermined amplification factor G.
The amplified ultrasonic wave D is thereby outputted to the transducer 18. The amplification factor G in the power amplifier 25 is established using the electrode pad 14 as a bonding part.
This is carried out variably based on the material of the surface of the lead terminal 15, the load resistance of the capillary 20 that occurs when the wire 16 is pressed against the bonding part, etc. Therefore, the state of ultrasonic vibration in the capillary 20 is fed back to the electrode amplifier 25 by a control means (not shown), and the control means further determines the amplification factor G based on the feedback state of the vibration of the capillary 20, the material of the electrode pad 14, etc. I am trying to set it to be variable.

積分器２４側から乗算器２３に対して出力され
る発振信号Ｂは、積分器２４に対してスタート信
号Ｅを入力することにより行なわれ、スタート信
号Ｅは第４図Ｂに示すように一定値のものとされ
る。このようなスタート信号Ｅの入力により積分
器２４は、第４図Ｃに示す発振信号Ｂを乗算器２
３に対して出力するようにしている。また、乗算
器２３は、超音波Ａと該発振信号Ｂを乗算し、第
４図Ｄに示す波形Ｃの信号波を電力増幅器２５に
出力可能としている。さらに電力増幅器２５は、
第４図Ｄに示す波形Ｃを増幅させた状態の波形の
出力波をトランスジユーサ１８に出力可能として
いる。ここで乗算器２３が出力する波形Ｃおよび
電力増幅器２５が出力する波形Ｄのうち、スター
ト信号Ｅを入力してから一定振幅の定常出力値Ｆ
の出力波を出力するまでの立上り時間Ｔは、立上
り調整手段としてのDA変換部２６において調整
可能とされる。すなわち、DA変換部２６は、積
分器２４より出力される発振信号Ｂにおいて、定
常信号値Ｈに至る立上り時間Ｔを可変に調整可能
とし、該立上り時間Ｔは、該DA変換部２６にて
予めいくつか［例えばＴ１〜Ｔ２０］の時間に対
応するように予めデジタル設定される。この結
果、設定される各立上り時間Ｔ１〜Ｔ２０に対応
するデジタル値をDA変換部２６に入力し、さら
にスタート信号Ｅを入力することで電力増幅器２
５から出力される超音波波形Ｄの立上り時間Ｔを
所定の値に設定することが可能となる。したがつ
て、例えば振動されるワイヤ１６の先端部のボー
ル形状を安定した形状とし、さらにボンデイング
部とワイヤ１６との安定した圧接状態を得るため
に立上り時間Ｔを可変に調整することが可能とな
る。 The oscillation signal B output from the integrator 24 side to the multiplier 23 is generated by inputting a start signal E to the integrator 24, and the start signal E is a constant value as shown in FIG. 4B. It is said to belong to By inputting such a start signal E, the integrator 24 transmits the oscillation signal B shown in FIG. 4C to the multiplier 2.
I am trying to output for 3. Further, the multiplier 23 multiplies the ultrasonic wave A and the oscillation signal B so that a signal wave having a waveform C shown in FIG. 4D can be output to the power amplifier 25. Furthermore, the power amplifier 25
An output wave having an amplified waveform C shown in FIG. 4D can be outputted to the transducer 18. Here, among the waveform C output by the multiplier 23 and the waveform D output by the power amplifier 25, a steady output value F with a constant amplitude after inputting the start signal E
The rise time T until the output wave is outputted can be adjusted by the DA converter 26 as a rise adjustment means. That is, the DA converter 26 can variably adjust the rise time T of the oscillation signal B output from the integrator 24 until it reaches the steady signal value H, and the rise time T is set in advance by the DA converter 26. It is digitally set in advance to correspond to several times [for example, T1 to T20]. As a result, by inputting the digital values corresponding to each set rise time T1 to T20 to the DA converter 26 and further inputting the start signal E, the power amplifier 2
It becomes possible to set the rise time T of the ultrasonic waveform D outputted from 5 to a predetermined value. Therefore, for example, it is possible to make the shape of the ball at the tip of the vibrated wire 16 stable, and to variably adjust the rise time T in order to obtain a stable pressure contact state between the bonding part and the wire 16. Become.

上記超音波ワイヤボンデイング装置１０におけ
るDA変換部２６での立上り時間Ｔの調整例とし
ては、上記ワイヤ１６のボール形状の変換や圧接
状態の変更の他に次のものが考えられる。例え
ば、ボンデイングを行なう半導体ペレツト１３の
材質がガリウム砒素、ガリウムリン等から成る場
合、立上り時間Ｔが急激となると振動されるワイ
ヤ１６の先端部により該ペレツト１３が欠けてし
まう恐れがある。また、半導体ペレツト１３の表
面の電極パツド１４が例えばアルミシリコンの蒸
着層により形成される場合等においては、立上り
時間Ｔが急激となると振動されるワイヤ１６の先
端部により蒸着層を剥離してしまう恐れがある。
このような場合には、立上り時間Ｔが長くなるよ
うに予めＴ１〜Ｔ２０に対応する所定のデジタル
値をDA変換部２６に入力するようにする。 As an example of adjusting the rise time T in the DA converter 26 in the ultrasonic wire bonding apparatus 10, in addition to changing the ball shape of the wire 16 and changing the press-contact state, the following can be considered. For example, when the semiconductor pellet 13 to be bonded is made of gallium arsenide, gallium phosphide, etc., if the rise time T becomes rapid, there is a risk that the pellet 13 will be chipped by the vibrating tip of the wire 16. Furthermore, in the case where the electrode pad 14 on the surface of the semiconductor pellet 13 is formed of a deposited layer of aluminum silicon, for example, if the rise time T becomes rapid, the tip of the vibrating wire 16 will peel off the deposited layer. There is a fear.
In such a case, predetermined digital values corresponding to T1 to T20 are input to the DA converter 26 in advance so that the rise time T becomes longer.

これに対し、リードフレーム１１のリード端子
１５にワイヤ１６を圧接する場合、リード端子１
５の表面が半導体ペレツト１３に比べて硬質とさ
れるので迅速かつ安定した圧接状態を得るために
は立上り時間Ｔを短かくする必要がある。このた
め、このような場合には、立上り時間Ｔが短かく
なるように予めＴ１〜Ｔ２０に対応する所定のデ
ジタル値をDA変換部２６に入力するようにす
る。 On the other hand, when the wire 16 is pressure-welded to the lead terminal 15 of the lead frame 11, the lead terminal 1
Since the surface of the semiconductor pellet 5 is harder than that of the semiconductor pellet 13, it is necessary to shorten the rise time T in order to obtain a quick and stable pressure contact state. Therefore, in such a case, predetermined digital values corresponding to T1 to T20 are input to the DA converter 26 in advance so that the rise time T is shortened.

次に、上記実施例の作用を説明する。 Next, the operation of the above embodiment will be explained.

上記実施例に係るワイヤボンデイング装置１０
によれば、立上り調整手段としてのDA変換部２
６において、ボンデイング部の材質、ワイヤの材
質等に応じた最良のボンデイング状態を与える立
上がり時間Ｔを設定することが可能となり、これ
により、各ボンデイング部に対するワイヤボンデ
イングを適正な接合強度、安定したボール形状で
安全かつ確実に行なうことが可能となる。 Wire bonding device 10 according to the above embodiment
According to DA converter 2 as a rise adjustment means
In step 6, it is possible to set the rise time T that provides the best bonding condition depending on the material of the bonding part, the material of the wire, etc., and thereby wire bonding for each bonding part can be performed with appropriate bonding strength and a stable ball. The shape allows it to be carried out safely and reliably.

［発明の効果］ 以上のように、本発明は超音波を出力可能とす
る超音波発振回路と、超音波発振回路より出力さ
れる超音波により振動されるトランスジユーサ
と、トランスジユーサに配設され、所定のボンデ
イング部間をワイヤボンデイング可能とするボン
デイングツールと、を備えてなる超音波ワイヤボ
ンデイング装置において、上記超音波回路に、超
音波出力波形の定常出力値に至る立上り時間を調
整可能とする立上り調整手段を設けることとした
ため、各ボンデイング部に対するワイヤボンデイ
ングをボンデイング部の材質、ワイヤの材料等に
応じて適正な接合強度、安定したボール形状で安
全かつ確実に行なうことができるという効果があ
る。[Effects of the Invention] As described above, the present invention provides an ultrasonic oscillation circuit capable of outputting ultrasonic waves, a transducer vibrated by the ultrasonic waves output from the ultrasonic oscillation circuit, and a transducer arranged in the transducer. and a bonding tool that enables wire bonding between predetermined bonding parts. Since a rise adjustment means is provided, the wire bonding for each bonding part can be performed safely and reliably with appropriate bonding strength and stable ball shape depending on the material of the bonding part, the material of the wire, etc. There is.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の一実施例に係る超音波ワイヤ
ボンデイング装置の回路図、第２図は超音波ワイ
ヤボンデイング装置によりワイヤボンデイングす
る状態を示す斜視図、第３図は第２図の−線
に沿う矢視図、第４図Ａ〜Ｄ第１図に示す回路図
の各部における信号の波形図である。 １０……超音波ワイヤボンデイング装置、１４
……電極パツド、１５……リード端子、１６……
ワイヤ、１７……超音波発振回路、１８……トラ
ンスジユーサ、２０……キヤピラリ、２２……超
音波発振器、２４……積分器、２６……DA変換
器、Ｔ……立上り時間。 Fig. 1 is a circuit diagram of an ultrasonic wire bonding device according to an embodiment of the present invention, Fig. 2 is a perspective view showing a state in which wire bonding is carried out by the ultrasonic wire bonding device, and Fig. 3 is a line drawn along the - line in Fig. 2. 4A to 4D are waveform diagrams of signals at various parts of the circuit diagram shown in FIG. 1; 10... Ultrasonic wire bonding device, 14
... Electrode pad, 15 ... Lead terminal, 16 ...
Wire, 17... Ultrasonic oscillation circuit, 18... Transducer, 20... Capillary, 22... Ultrasonic oscillator, 24... Integrator, 26... DA converter, T... Rise time.

Claims (1)

【特許請求の範囲】[Claims] １ 超音波を出力可能とする超音波発振回路と、
超音波発振回路より出力される超音波により振動
されるトランスジユーサと、トランスジユーサに
配設され、所定のボンデイング部間をワイヤボン
デイング可能とするボンデイングツールと、を備
えてなる超音波ワイヤボンデイング装置におい
て、上記超音波発振回路に、超音波出力波形の定
常出力値に至る立上り時間を調整可能とする立上
り調整手段を設けたことを特徴とする超音波ワイ
ヤボンデイング装置。1. An ultrasonic oscillation circuit capable of outputting ultrasonic waves,
Ultrasonic wire bonding comprising: a transducer that is vibrated by ultrasonic waves output from an ultrasonic oscillation circuit; and a bonding tool that is disposed on the transducer and that enables wire bonding between predetermined bonding parts. An ultrasonic wire bonding apparatus, characterized in that the ultrasonic oscillator circuit is provided with a rise adjusting means for adjusting the rise time of the ultrasonic output waveform until it reaches a steady output value.
JP60103950A 1985-05-17 1985-05-17 Supersonic wire bonding apparatus Granted JPS61263233A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60103950A JPS61263233A (en) 1985-05-17 1985-05-17 Supersonic wire bonding apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60103950A JPS61263233A (en) 1985-05-17 1985-05-17 Supersonic wire bonding apparatus

Publications (2)

Publication Number Publication Date
JPS61263233A JPS61263233A (en) 1986-11-21
JPH0476501B2 true JPH0476501B2 (en) 1992-12-03

Family

ID=14367696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60103950A Granted JPS61263233A (en) 1985-05-17 1985-05-17 Supersonic wire bonding apparatus

Country Status (1)

Country Link
JP (1) JPS61263233A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0355955A3 (en) * 1988-07-25 1991-12-27 Hitachi, Ltd. Connection for semiconductor devices or integrated circuits by coated wires and method of manufacturing the same
US4976392A (en) * 1989-08-11 1990-12-11 Orthodyne Electronics Corporation Ultrasonic wire bonder wire formation and cutter system

Also Published As

Publication number Publication date
JPS61263233A (en) 1986-11-21

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