JPH047500B2 - - Google Patents
Info
- Publication number
- JPH047500B2 JPH047500B2 JP88683A JP88683A JPH047500B2 JP H047500 B2 JPH047500 B2 JP H047500B2 JP 88683 A JP88683 A JP 88683A JP 88683 A JP88683 A JP 88683A JP H047500 B2 JPH047500 B2 JP H047500B2
- Authority
- JP
- Japan
- Prior art keywords
- plating
- photoresist
- composition
- copper
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011342 resin composition Substances 0.000 claims description 10
- 239000003999 initiator Substances 0.000 claims description 5
- 239000000178 monomer Substances 0.000 claims description 5
- 239000011230 binding agent Substances 0.000 claims description 4
- 229920001169 thermoplastic Polymers 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 23
- 238000007747 plating Methods 0.000 description 23
- 239000000203 mixture Substances 0.000 description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 11
- 239000010949 copper Substances 0.000 description 11
- 229910000679 solder Inorganic materials 0.000 description 11
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- -1 nitrogen-containing compound Chemical class 0.000 description 7
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 3
- 239000012964 benzotriazole Substances 0.000 description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 3
- 239000004327 boric acid Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- MYWOJODOMFBVCB-UHFFFAOYSA-N 1,2,6-trimethylphenanthrene Chemical compound CC1=CC=C2C3=CC(C)=CC=C3C=CC2=C1C MYWOJODOMFBVCB-UHFFFAOYSA-N 0.000 description 1
- BGJQNPIOBWKQAW-UHFFFAOYSA-N 1-tert-butylanthracene-9,10-dione Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2C(C)(C)C BGJQNPIOBWKQAW-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- SJEBAWHUJDUKQK-UHFFFAOYSA-N 2-ethylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC=C3C(=O)C2=C1 SJEBAWHUJDUKQK-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- PWUGMMOJPHZAMH-UHFFFAOYSA-N C(C1=CC=CC=C1)(=O)C1=CC=CC=C1.C(C=C)(=O)OCC(COC(C=C)=O)(COC(C=C)=O)CO Chemical compound C(C1=CC=CC=C1)(=O)C1=CC=CC=C1.C(C=C)(=O)OCC(COC(C=C)=O)(COC(C=C)=O)CO PWUGMMOJPHZAMH-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- 239000001888 Peptone Substances 0.000 description 1
- 108010080698 Peptones Proteins 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 244000028419 Styrax benzoin Species 0.000 description 1
- 235000000126 Styrax benzoin Nutrition 0.000 description 1
- 235000008411 Sumatra benzointree Nutrition 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- CQHKDHVZYZUZMJ-UHFFFAOYSA-N [2,2-bis(hydroxymethyl)-3-prop-2-enoyloxypropyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(CO)COC(=O)C=C CQHKDHVZYZUZMJ-UHFFFAOYSA-N 0.000 description 1
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 229960002130 benzoin Drugs 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- VYHBFRJRBHMIQZ-UHFFFAOYSA-N bis[4-(diethylamino)phenyl]methanone Chemical compound C1=CC(N(CC)CC)=CC=C1C(=O)C1=CC=C(N(CC)CC)C=C1 VYHBFRJRBHMIQZ-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- ISAOCJYIOMOJEB-UHFFFAOYSA-N desyl alcohol Natural products C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 125000004386 diacrylate group Chemical group 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical class OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 235000019382 gum benzoic Nutrition 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- PBOSTUDLECTMNL-UHFFFAOYSA-N lauryl acrylate Chemical compound CCCCCCCCCCCCOC(=O)C=C PBOSTUDLECTMNL-UHFFFAOYSA-N 0.000 description 1
- FDZZZRQASAIRJF-UHFFFAOYSA-M malachite green Chemical compound [Cl-].C1=CC(N(C)C)=CC=C1C(C=1C=CC=CC=1)=C1C=CC(=[N+](C)C)C=C1 FDZZZRQASAIRJF-UHFFFAOYSA-M 0.000 description 1
- 229940107698 malachite green Drugs 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 235000019319 peptone Nutrition 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000012719 thermal polymerization Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/085—Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
- H05K3/0076—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the composition of the mask
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Polymerisation Methods In General (AREA)
- Graft Or Block Polymers (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Description
【発明の詳細な説明】
本発明は、金属表面への密着が改善された、特
にプリント配線板用のフオトレジストの形成に用
いられる光重合性樹脂組成物に関する。
フオトレジストを用いたプリント配線板の製造
は一般に次の工程よりなる。(1)ガラス・エポキシ
銅張積層板等の基板にフオトレジストを積層す
る。(2)パターンマスクフイルムを通して画像形成
できるように活性光線を照射する。(3)適当な現像
液でフオトレジストの未硬化部分を選択的に溶解
除去し、銅面を露出させると共にレジストパター
ンを形成する。(4)露出銅面上に電気銅メツキした
後、電気ハンダメツキを行なう。(5)硬化レジスト
を適当な溶媒で剥離し、銅面を露出させる。(6)ハ
ンダメツキ層をレジストとして露出銅面を適当な
溶媒でエツチングし、ハンダコートした部分が配
線部となるプリント配線板を得る。
これらの製造工程において、フオトレジストに
対する特に重要な要求性能は、フオトレジストが
メツキ液等の液体に侵されず、フオトレジストに
被覆された基材を十分に保護できることである。
特にハイスローハンダメツキ時に生じる硬化レジ
ストの剥離は、硬化レジストと銅面間へのメツキ
液の浸み込みとなつて、回路部以外にもハンダが
メツキされ、導線間の短絡、導線幅の拡大、導線
周辺部の形状の乱れ等の問題を生じていた。
これらの問題は硬化レジストと銅面の密着力の
不足によるものでありこのため密着促進剤の研究
開発が行なわれ、米国特許第3622334号明細書に
記載されるようなベンゾトリアゾール、ベンズイ
ミダゾールのような複素環境式窒素含有化合物を
光重合性樹脂組成物に添加すること等が提案され
ている。
しかしながら、近年の高密度、高精度化による
ライン幅の狭い配線を用いたプリント配線板を製
造するには上記複素環式窒素含有化合物の添加量
を増加しなければ高精度パターンが得られず、こ
のことが新たな問題を引きおこす原因となつてい
る。すなわちベンゾトリアゾール、ベンズイミダ
ゾールの増加は従来から、フオトレジストのパタ
ーン形状確認のため必須な染料を退色したり、フ
オトレジストの感度を低下させる。一方感度向上
のため光重合開始剤の添加量を増すと解像された
パターン断面が逆台形となり、解像度の低下を生
じる。また分子量の小さい添加剤の量を増加する
と、多くの工程で硬化レジスト層の溶解を促進
し、レジスト膜の耐性の低下をきたす点から好ま
しくない。
本発明者らは、上記したような従来からある問
題点を克服すべく鋭意検討した結果、光重合性樹
脂組成物に、特定の化合物を極めて少量添加する
ことにより、金属面への密着性が改善できること
を見い出し本発明を完成した。
すなわち、本発明の要旨とするところは、
(a) バインダー用熱可塑性重合体
(b) 分子中に少なくとも1個のエチレン性不飽和
基を有する架橋性単量体
(c) 光重合開始剤および
(d) ロフイン
よりなる光重合性樹脂組成物にある。
本発明の光重合性樹脂組成物の特徴は、ロフイ
ンを含有しているため、フオトレジストと銅板と
の密着性が優れ、レジスト剥離、メツキもぐり等
の現象を全く引き起さず微細パターンのプリント
配線板の製造に適していることである。
本発明の組成物を構成するバインダー用熱可塑
性重合体は、使用する現像液に可溶であるかまた
は膨潤するものであれば種々のものが使用でき
る。具体例としては、1,1,1トリクロロエタ
ンを現像液とするフオトレジストの場合、ポリメ
タクリル酸メチルまたはメタクリル酸メチルを主
成分とする共重合体が用いられる。メタクリル酸
メチルと共重合するのに使用される単量体の具体
例としては、アクリル酸メチル、(メタ)アクリ
ル酸エチル(アクリル酸エチルまたはメタクリル
酸エチルの意、以下同様)、(メタ)アクリル酸n
−プロピル、(メタ)アクリル酸イソプロピル、
(メタ)アクリル酸n−ブチル、(メタ)アクリル
酸イソブチル、(メタ)アクリル酸t−ブチル、
(メタ)アクリル酸2−エチルヘキシル、(メタ)
アクリル酸ラウリル、(メタ)アクリル酸2−ヒ
ドロキシエチル、(メタ)アクリル酸2−ヒドロ
キシプロピル等の(メタ)アクリル酸エステル、
スチレンなどがあげられる。
一方、炭酸ナトリウム等のアルカリ希薄溶液を
現像液とするフオトレジストの場合は、前記の
(メタ)アクリル酸エステルまたはスチレン等と
アクリル酸、メタクリル酸、イタコン酸、フマル
酸、マレイン酸等のカルボン酸との共重合体があ
げられる。
本発明のバインダー用熱可塑性樹脂は、使用目
的によつて分子量、共重合体の組成を一概に決め
られないが、分子量の範囲としては現像または皮
膜特性の点から20000〜200000がよい。
本発明の組成物を構成する分子中に少なくとも
1個のエチレン性不飽和基を有する架橋性単量体
としては、ポリエチレングリコールジアクリレー
ト、ペンタエリスリトールジアクリレート、ペン
タエリスリトールトリアクリレート、ペンタエリ
スリトールテトラアクリレート、トリメチロール
プロパントリアクリレート、等のポリエステルア
クリレートやエポキシアクリレート、ウレタンア
クリレート等があげられ、これらは1種またはそ
れ以上併用して、組成物中25〜50重量%の範囲で
使用される。架橋性単量体の使用量が25重量%未
満では硬化皮膜の強度が十分でなく、また50重量
%をこえるとフオトレジストが軟かくなりすぎて
コールドフローを起しやすい。
本発明の組成物を構成する光重合開始剤は公知
の例えば、ベンゾフエノン,ミヒラーズケトン,
4,4′−ビス(ジエチルアミノ)ベンゾフエノ
ン,t−ブチルアントラキノン,2−エチルアン
トラキノン,チオキサントン類,ベンゾインアル
キルエーテル類,ベンジルケタール類等があげら
れ、これらは1種または2種以上を併用できる。
組成物中の光重合開始剤の使用量はコスト,パタ
ーンの仕上り具合あるいは解像度等の点から0.5
〜5重量%である。また本発明において使用する
ロフインは、フオトレジストの金属板への密着性
を改良するための極めて有効な成分である。この
化合物の組成物への添加量は、フオトレジストの
組成成分と組成比、および光硬化後のフオトレジ
ストの硬さによつて一概に決められないが、有効
な密着効果を得るための量は組成物中0.001〜1
重量%,好ましくは0.01〜0.5重量%の範囲であ
る。多すぎると感度が低下し、少なすぎるとハン
ダメツキ時にメツキもぐりを起しやすい。
本発明の組成物は、そのままでも使用できる
が、ベース樹脂を溶解させ、かつ沸点のあまり高
くない溶剤、例えばメチルエチルケトン,メチレ
ンクロリド,塩化メチレン/メチルアルコールの
混合物,またはイソプロピルアルコール等を併用
した方が好ましい結果を得られる。溶剤の使用量
は組成物に対して200重量%以下、好ましくは100
〜200重量%である。
本発明の組成物は、必要に応じて可塑剤、熱重
合禁止剤、充填剤等を添加することもできる。
以上のべたような成分組成からなる本発明の光
重合性樹脂組成物は、金属面、例えば銅,ニツケ
ル,クロム好ましくは銅の上にラミネートして用
いられる。使用法としては液状のレジストとして
金属面に塗布し、乾燥後、保護フイルムを被覆し
て用いるか、またはドライフイルムフオトレジス
トとしてそれを金属面にラミネートしたものとし
て用いられる。フオトレジスト層の厚みは用途に
よつて異なるが、乾燥後の厚みで5〜100μmm程
度である。
液状レジストとした時の保護フイルムとしては
ポリエチレン,ポリプロピレンのような不活性な
ポリオレフインフイルムが好ましく用いられる。
ドライフイルムフオトレジストはポリエステルの
支持フイルム上に光重合性樹脂組成物を塗布し、
乾燥後、ポリオレフインの保護フイルムを積層し
て作られる。
次にアートワークと呼ばれるネガまたはポジマ
スクパターンフイルムを通して活性光線を照射す
る。活性光線としてはカーボンアーク灯,超高圧
水銀灯,高圧水銀灯,キセノンランプ等の紫外線
を有効に放射するものが用いられる。露光量は一
概に決められないが300mj/cm2以下、好ましくは
50〜200mj/cm2である。活性光線露光後、適当な
現像液を用いて未露光部分を洗浄除去することに
より硬化部分のレジストパターンを得る。
現像液は、安全で安定である必要がある。しか
し特に重要な点は現像の操作性、すなわちフオト
レジストの硬化部と未硬化部の溶解速度差が極め
て大きく、未硬化部の溶解速度が適度に速いよう
な溶媒を現像液として選択することである。一般
に溶剤現像型のフオトレジストでは、1,1,
1,トリクロロエタン、アルカリ現像型のフオト
レジストでは炭酸ナトリウムの希薄溶液等が好ま
しく用いられる。
現像の方法は、デツプ方式,パドル方式,スプ
レー方式等があるが、高圧スプレー方式が解像度
向上には最も適している。
現像後に行なわれる電気銅メツキは、硫酸銅メ
ツキ,ピロリン酸銅メツキが用いられ、ハンダメ
ツキにはハイスローハンダメツキが多く用いられ
ている。
本発明の光重合性樹脂組成物は、金属積層板の
配線加工,特にプリント配線板に使用される銅張
り積層板の配線加工に対して、極めてすぐれたレ
ジスト性能を有するため、高精度,高密度化が要
求される配線加工に適したものである。
以下、実施例により本発明をさらに詳細に説明
するが、実施例中の部は重量部を表わす。
実施例1〜6,比較例1
ガラス・エポキシ銅張積層板上に、下記の組成
からなる感光性樹脂組成物
ポリメタクリル酸メチル 100部
(分子量(MN)=60000)
ペンタエリスリトールトリアクリレート 50〃
ベンゾフエノン 1〃
ミヒラーズケトン 0.2〃
ハイドロキノン 0.05〃
マラカイトグリーン 0.1〃
メチルエチルケトン 150〃
ロフイン 変更量
をドクターナイフで塗布し、乾燥してメチルエチ
ルケトンを放散させてフオトレジストの厚みを
50μmとした。この上に25μm厚のポリエチレン製
フイルムを保護膜として積層し、さらにこの上の
アートワークを密着して超高圧水銀灯で露光し
た。アートワークは50μm,60μm,80μm,
100μmのラインアンドスペイスパターンを用い
た。露光に使用した超高圧水銀灯はウシオ電機(株)
製,USH−102Dで80mj/cm2照射した、この際の
露光強度は、ウシオ電機(株)製紫外線強度計UIT
−100に受光器UVD−365Pを取付けて測定し
2mw/cm2一定とした。
露光後、20分間放置して、保護フイルムを剥離
し、1,1,1−トリクロロエタンを入れたデユ
ポン社製デユポン“C”プロセツサー中で現像し
た。温度は18〜20℃に保ち、通過速度は200cm/
分で、スプレー圧力は1.4Kg/cm2に調節した。
次いで現像処理したものを中性洗剤水溶液中に
室温で約1分間浸漬し、脱脂後、オーバフロータ
ンクでスプレー水洗を約1分間行ない、次いで約
20重量%濃度の過硫酸アンモニウム水溶液中に1
分間浸漬した。引続き再びスプレー水洗洗浄を約
1分間行なつた後、約15%の硫酸水溶液に1分間
浸漬し、再びスプレー水洗を1分間行なつた。
次いでピロリン酸銅メツキ槽(PH=8.2〜8.4,
温度50±2℃)に入れて45分間2.7A/dm2でメ
ツキを行なつた。
メツキ終了後、直ちに水洗し、15%硼フツ酸水
溶液に浸漬し、次いで下記の組成
錫 15g(ハンダメツキ液1当り量)
鉛 10g( 〃 )
遊離硼フツ酸 400g( 〃 )
遊離硼酸 21.6g( 〃 )
ペプトン 5.2g( 〃 )
を有するハイスローハンダメツキ浴中で、室温に
て1.5A/dm2でハンダメツキを行なつた。メツ
キ終了後水洗を行ない乾燥した。メツキ製品のも
ぐり現像を観察するため、試料を切り出し、レジ
スト断面を光学顕微鏡で観察した。結果を表1に
示す。
実施例 2〜8
添加剤ロフインをベンゾトリアゾールに変え、
かつその使用量および露光量を表1に示すように
した以外は実施例1と同様な方法をくり返してメ
ツキを行ないその性能を評価した。得られた結果
を表1に示す。
【表】DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photopolymerizable resin composition that has improved adhesion to metal surfaces and is used particularly for forming photoresists for printed wiring boards. The production of printed wiring boards using photoresists generally consists of the following steps. (1) Layer photoresist on a substrate such as a glass/epoxy copper-clad laminate. (2) Actinic rays are irradiated through the patterned mask film so that an image can be formed. (3) Selectively dissolve and remove the uncured portions of the photoresist using a suitable developer to expose the copper surface and form a resist pattern. (4) After electrolytic copper plating is applied to the exposed copper surface, electrolytic solder plating is performed. (5) Peel off the cured resist with an appropriate solvent to expose the copper surface. (6) Using the solder plating layer as a resist, the exposed copper surface is etched with an appropriate solvent to obtain a printed wiring board in which the solder coated portion becomes the wiring section. In these manufacturing processes, a particularly important performance requirement for the photoresist is that the photoresist is not attacked by a liquid such as a plating solution, and that the substrate coated with the photoresist can be sufficiently protected.
In particular, peeling of the hardened resist that occurs during high-slow solder plating causes the plating liquid to seep between the hardened resist and the copper surface, causing solder to be plated in areas other than the circuit area, causing short circuits between conductors, and expansion of the conductor width. , problems such as irregularities in the shape of the peripheral portion of the conductor occurred. These problems are due to the lack of adhesion between the cured resist and the copper surface. Therefore, research and development of adhesion promoters has been conducted, such as benzotriazole and benzimidazole as described in U.S. Pat. No. 3,622,334. It has been proposed to add a complex nitrogen-containing compound to a photopolymerizable resin composition. However, in order to manufacture printed wiring boards using wiring with narrow line widths due to recent advances in high density and high precision, it is necessary to increase the amount of the heterocyclic nitrogen-containing compound added in order to obtain a high precision pattern. This is causing new problems. That is, an increase in the amount of benzotriazole or benzimidazole has conventionally caused discoloration of dyes essential for confirming the pattern shape of photoresists and decreased the sensitivity of photoresists. On the other hand, if the amount of photopolymerization initiator added is increased to improve sensitivity, the cross section of the resolved pattern becomes an inverted trapezoid, resulting in a decrease in resolution. In addition, increasing the amount of additives with low molecular weights is undesirable because it promotes dissolution of the cured resist layer in many steps, resulting in a decrease in the resistance of the resist film. As a result of intensive studies to overcome the conventional problems described above, the inventors of the present invention have found that by adding an extremely small amount of a specific compound to a photopolymerizable resin composition, the adhesion to metal surfaces can be improved. They found that it could be improved and completed the present invention. That is, the gist of the present invention is as follows: (a) a thermoplastic polymer for a binder, (b) a crosslinkable monomer having at least one ethylenically unsaturated group in the molecule, (c) a photopolymerization initiator, and (d) A photopolymerizable resin composition comprising lofin. The photopolymerizable resin composition of the present invention is characterized by containing lofin, so it has excellent adhesion between the photoresist and the copper plate, and prints fine patterns without causing any phenomena such as resist peeling or plating. It is suitable for manufacturing wiring boards. As the thermoplastic polymer for the binder constituting the composition of the present invention, various polymers can be used as long as they are soluble or swellable in the developer used. As a specific example, in the case of a photoresist using 1,1,1 trichloroethane as a developer, polymethyl methacrylate or a copolymer containing methyl methacrylate as a main component is used. Specific examples of monomers used for copolymerization with methyl methacrylate include methyl acrylate, ethyl (meth)acrylate (meaning ethyl acrylate or ethyl methacrylate, hereinafter the same), (meth)acrylic acid n
-propyl, isopropyl (meth)acrylate,
(meth)acrylate n-butyl, (meth)acrylate isobutyl, (meth)acrylate t-butyl,
(meth)acrylic acid 2-ethylhexyl, (meth)
(meth)acrylic acid esters such as lauryl acrylate, 2-hydroxyethyl (meth)acrylate, and 2-hydroxypropyl (meth)acrylate;
Examples include styrene. On the other hand, in the case of a photoresist that uses a dilute alkaline solution such as sodium carbonate as a developer, the above-mentioned (meth)acrylic acid ester or styrene and a carboxylic acid such as acrylic acid, methacrylic acid, itaconic acid, fumaric acid, maleic acid, etc. Examples include copolymers with Although the molecular weight and composition of the copolymer of the thermoplastic resin for the binder of the present invention cannot be determined unconditionally depending on the purpose of use, the molecular weight range is preferably 20,000 to 200,000 from the viewpoint of development or film properties. Examples of the crosslinkable monomer having at least one ethylenically unsaturated group in the molecule constituting the composition of the present invention include polyethylene glycol diacrylate, pentaerythritol diacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, Examples include polyester acrylates such as trimethylolpropane triacrylate, epoxy acrylates, and urethane acrylates, and these are used alone or in combination in an amount of 25 to 50% by weight in the composition. If the amount of crosslinkable monomer used is less than 25% by weight, the strength of the cured film will not be sufficient, and if it exceeds 50% by weight, the photoresist will become too soft and cold flow will easily occur. The photopolymerization initiator constituting the composition of the present invention is known, for example, benzophenone, Michler's ketone,
Examples include 4,4'-bis(diethylamino)benzophenone, t-butylanthraquinone, 2-ethylanthraquinone, thioxanthones, benzoin alkyl ethers, and benzyl ketals, and these may be used alone or in combination of two or more.
The amount of photopolymerization initiator used in the composition is 0.5 from the viewpoint of cost, pattern finish, resolution, etc.
~5% by weight. Furthermore, the lofin used in the present invention is an extremely effective component for improving the adhesion of photoresist to metal plates. The amount of this compound to be added to the composition cannot be determined unconditionally depending on the composition and composition ratio of the photoresist, and the hardness of the photoresist after photocuring, but the amount to obtain an effective adhesion effect is 0.001-1 in the composition
% by weight, preferably in the range 0.01-0.5% by weight. If it's too much, the sensitivity will decrease, and if it's too little, plating will likely occur during solder plating. The composition of the present invention can be used as is, but it is better to use a solvent that dissolves the base resin and whose boiling point is not too high, such as methyl ethyl ketone, methylene chloride, a mixture of methylene chloride/methyl alcohol, or isopropyl alcohol. A favorable result can be obtained. The amount of solvent used is 200% by weight or less, preferably 100% by weight based on the composition.
~200% by weight. A plasticizer, a thermal polymerization inhibitor, a filler, etc. may be added to the composition of the present invention, if necessary. The photopolymerizable resin composition of the present invention having the above-described component composition is used by being laminated onto a metal surface, such as copper, nickel, or chromium, preferably copper. It is used either by applying it as a liquid resist to a metal surface and, after drying, covering it with a protective film, or by laminating it onto a metal surface as a dry film photoresist. The thickness of the photoresist layer varies depending on the application, but the thickness after drying is about 5 to 100 μmm. As a protective film when used as a liquid resist, an inert polyolefin film such as polyethylene or polypropylene is preferably used.
Dry film photoresist is made by applying a photopolymerizable resin composition onto a polyester support film.
After drying, a polyolefin protective film is laminated. Next, actinic light is irradiated through a negative or positive mask pattern film called artwork. As the active light, a carbon arc lamp, an ultra-high-pressure mercury lamp, a high-pressure mercury lamp, a xenon lamp, etc., which effectively emit ultraviolet rays, are used. Although the exposure amount cannot be determined unconditionally, it should be 300 mj/cm 2 or less, preferably
It is 50 to 200 mj/ cm2 . After exposure to actinic light, the unexposed portions are washed and removed using a suitable developer to obtain a resist pattern of the cured portions. Developer solutions need to be safe and stable. However, the most important point is the operability of development, that is, the difference in dissolution rate between the cured and uncured areas of the photoresist is extremely large, and it is important to select a solvent as the developer that allows the dissolution rate of the uncured areas to be appropriately fast. be. Generally, in solvent-developed photoresists, 1, 1,
1. For trichloroethane and alkaline development type photoresists, dilute solutions of sodium carbonate and the like are preferably used. There are various developing methods such as a dip method, a paddle method, and a spray method, but the high-pressure spray method is most suitable for improving resolution. Copper sulfate plating and copper pyrophosphate plating are used for electrolytic copper plating performed after development, and high-slow solder plating is often used for solder plating. The photopolymerizable resin composition of the present invention has extremely excellent resist performance for wiring processing of metal laminates, particularly for wiring processing of copper-clad laminates used in printed wiring boards. It is suitable for wiring processing that requires high density. Hereinafter, the present invention will be explained in more detail with reference to Examples, in which parts represent parts by weight. Examples 1 to 6, Comparative Example 1 A photosensitive resin composition having the following composition was applied on a glass/epoxy copper-clad laminate: 100 parts of polymethyl methacrylate (molecular weight (M N )=60000) 50 parts of pentaerythritol triacrylate Benzophenone 1〃 Michler's Ketone 0.2〃 Hydroquinone 0.05〃 Malachite Green 0.1〃 Methyl Ethyl Ketone 150〃 Lofin Apply the changing amount with a doctor knife, dry it and diffuse the methyl ethyl ketone to increase the thickness of the photoresist.
It was set to 50 μm. A 25 μm thick polyethylene film was laminated on top of this as a protective film, and the artwork was then placed in close contact with the film and exposed to light using an ultra-high pressure mercury lamp. Artwork is 50μm, 60μm, 80μm,
A 100 μm line and space pattern was used. The ultra-high pressure mercury lamp used for exposure was manufactured by Ushio Inc.
The exposure intensity at this time was measured using an ultraviolet intensity meter UIT manufactured by Ushio Inc.
Attach the UVD-365P receiver to the -100 and measure.
2mw/ cm2 constant. After exposure, the protective film was left for 20 minutes and developed in a DuPont "C" processor containing 1,1,1-trichloroethane. The temperature is kept at 18-20℃, and the passing speed is 200cm/
minutes, and the spray pressure was adjusted to 1.4 Kg/cm 2 . The developed product was then immersed in a neutral detergent aqueous solution at room temperature for about 1 minute, degreased, sprayed with water in an overflow tank for about 1 minute, and then washed with water in an overflow tank for about 1 minute.
1 in an aqueous solution of ammonium persulfate at a concentration of 20% by weight.
Soaked for minutes. Subsequently, spray washing was performed again for about 1 minute, followed by immersion in an approximately 15% sulfuric acid aqueous solution for 1 minute, and spray washing was performed again for 1 minute. Next, copper pyrophosphate plating tank (PH=8.2~8.4,
Plating was carried out at 2.7 A/dm 2 for 45 minutes at a temperature of 50±2° C.). After plating, immediately wash with water, immerse in 15% boric acid aqueous solution, and then use the following composition: Tin 15g (per solder plating solution) Lead 10g ( ) Free boric acid 400g ( ) Free boric acid 21.6g ( ) ) Solder plating was carried out in a high-slow solder plating bath with 5.2 g peptone ( ) at 1.5 A/dm 2 at room temperature. After finishing plating, it was washed with water and dried. In order to observe the development of the plating product, a sample was cut out and the cross section of the resist was observed using an optical microscope. The results are shown in Table 1. Examples 2 to 8 Changing the additive lofin to benzotriazole,
Plating was performed in the same manner as in Example 1, except that the amount used and the exposure amount were as shown in Table 1, and the performance was evaluated. The results obtained are shown in Table 1. 【table】
Claims (1)
基を有する架橋性単量体 (c) 光重合開始剤および (d) ロフイン よりなる光重合性樹脂組成物。[Scope of Claims] 1 (a) Thermoplastic polymer for binder (b) Crosslinkable monomer having at least one ethylenically unsaturated group in the molecule (c) Photopolymerization initiator and (d) Lofin A photopolymerizable resin composition consisting of:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP88683A JPS59125727A (en) | 1983-01-07 | 1983-01-07 | Photopolymerizable resin composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP88683A JPS59125727A (en) | 1983-01-07 | 1983-01-07 | Photopolymerizable resin composition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59125727A JPS59125727A (en) | 1984-07-20 |
JPH047500B2 true JPH047500B2 (en) | 1992-02-12 |
Family
ID=11486152
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP88683A Granted JPS59125727A (en) | 1983-01-07 | 1983-01-07 | Photopolymerizable resin composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59125727A (en) |
-
1983
- 1983-01-07 JP JP88683A patent/JPS59125727A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS59125727A (en) | 1984-07-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4069076A (en) | Liquid lamination process | |
KR100191177B1 (en) | Photosensitive resin composition and photosensitive element using the same | |
JPH0642073B2 (en) | Photopolymerizable resin composition | |
JP4645776B2 (en) | Photosensitive resin composition, photosensitive element using the same, resist pattern forming method, and printed wiring board manufacturing method | |
US4629679A (en) | Tetrazole compound-containing photopolymerizable resin composition | |
JP2007286477A (en) | Photosensitive resin composition, photosensitive element using the same and method for producing printed wiring board | |
JPH047499B2 (en) | ||
JP4175079B2 (en) | Photosensitive resin composition and photosensitive element using the same | |
JPWO2007040204A1 (en) | Photosensitive resin composition, photosensitive element, and method for producing printed wiring board | |
JP3199600B2 (en) | Photosensitive resin composition and photosensitive element using the same | |
JPH0426101B2 (en) | ||
JPH047500B2 (en) | ||
JP3859934B2 (en) | Photosensitive resin composition, photosensitive element, method for producing resist pattern, and method for producing printed wiring board | |
JPH0334056B2 (en) | ||
JP2011221084A (en) | Method for manufacturing photosensitive resin composition, photosensitive element and print circuit board | |
JPH047498B2 (en) | ||
JP3797332B2 (en) | Photosensitive element, method for producing resist pattern using the same, method for producing printed wiring board, and method for producing lead frame | |
JPH0233148A (en) | Photosensitive resin composition | |
JPH0336422B2 (en) | ||
JP2596089B2 (en) | Photosensitive resin composition and photosensitive resin composition laminate | |
JP4238631B2 (en) | Photosensitive resin composition, photosensitive element using the same, resist pattern forming method, and printed wiring board manufacturing method | |
JP4316227B2 (en) | Photosensitive resin composition and use thereof | |
JP3944971B2 (en) | Photosensitive resin composition and photosensitive element using the same | |
JP2005221743A (en) | Photosensitive resin composition, photosensitive element using the same, method for producing resist pattern and method for producing printed wiring board | |
JPH0269753A (en) | Photopolymerizable resin composition |