JPH0471216A - Resist processing equipment - Google Patents
Resist processing equipmentInfo
- Publication number
- JPH0471216A JPH0471216A JP2182720A JP18272090A JPH0471216A JP H0471216 A JPH0471216 A JP H0471216A JP 2182720 A JP2182720 A JP 2182720A JP 18272090 A JP18272090 A JP 18272090A JP H0471216 A JPH0471216 A JP H0471216A
- Authority
- JP
- Japan
- Prior art keywords
- heater
- wafer processing
- processing table
- wafer
- processing chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012545 processing Methods 0.000 title claims abstract description 111
- 239000011261 inert gas Substances 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000007789 gas Substances 0.000 abstract description 19
- 230000000717 retained effect Effects 0.000 abstract 2
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 238000000034 method Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000498 cooling water Substances 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
Landscapes
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、フォトレジストか塗布された半導体ウェハを
加熱しなから紫外線を照射してレジスト処理する装置に
関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an apparatus for resist processing by heating a semiconductor wafer coated with photoresist and then irradiating it with ultraviolet rays.
［従来の技術］
を導体素子の製造工程において、フォトレジストパター
ンの形成工程は大きく分けると、レジスト塗布、ブレベ
ーク、露光、現象、ボストベークの順に行われる。この
後、このフォトレジストパターンを用いて、イオン注入
、あるいはレジスト塗布前にあらかしめ半導体ウェハの
表面に形成されたシリコン酸化膜、シリコン窒化膜、ア
ルミニウム薄膜などのプラズマエツチングなどが行われ
る。このとき、イオン注入時にはフォトレジストか昇温
するのて耐熱性か高い方か良く、プラズマエツチング時
ては、「膜べり」か生しない耐久性か要求される。とこ
ろが、近年は半導体素子の高集積化、微細化などに伴い
、フォトレジストかより高分解佳のものか使われるよう
になったか、この場合フォトレジストはポジ型てあり、
一般的にネガ型より耐熱性か悪い。[Prior Art] In the manufacturing process of a conductor element, the steps of forming a photoresist pattern can be roughly divided into the following steps: resist coating, blebake, exposure, development, and postbake. Thereafter, using this photoresist pattern, ion implantation or plasma etching of the silicon oxide film, silicon nitride film, aluminum thin film, etc., formed on the surface of the semiconductor wafer for preparation before applying the resist is performed. At this time, the temperature of the photoresist increases during ion implantation, so the higher the heat resistance, the better, and during plasma etching, durability is required without causing "film erosion." However, in recent years, with the increasing integration and miniaturization of semiconductor devices, photoresists or those with higher resolution have been used. In this case, photoresists are positive type.
Generally, heat resistance is worse than negative type.
フォトレジストの耐熱性や耐プラズマ性を高める方法と
してボストベークにおいて段階的に温度を上げ、充分な
時間加熱処理する方法や現像後のフォトレジストパター
ンに紫外線を照射する方法が検討されている。しかし、
前者の方法ては十分な耐熱性や耐プラズマ性か得られず
、また処理時間が大幅に長くなるという欠点かある。そ
して、後者の方法においては、紫外線照射により耐熱温
度は上昇するものの、フォトレジスト膜が厚い場合には
、紫外線か内部まで到達せず、フォトレジストの内部ま
で十分に耐熱性が向上しなかったり、処理時間が長いと
いう欠点かある。As methods for increasing the heat resistance and plasma resistance of photoresists, methods are being considered, such as increasing the temperature stepwise in a post bake and performing heat treatment for a sufficient period of time, and irradiating the photoresist pattern with ultraviolet rays after development. but,
The former method has the disadvantage that sufficient heat resistance and plasma resistance cannot be obtained, and the processing time is significantly longer. In the latter method, although the heat resistance temperature increases due to ultraviolet irradiation, if the photoresist film is thick, the ultraviolet rays may not reach the inside of the photoresist, and the heat resistance may not be sufficiently improved to the inside of the photoresist. The drawback is that the processing time is long.
そのため最近は、例えば特開昭６０−４５２４７号「フ
ォトレジストの硬化方法及び硬化装置」に開示されてい
るように「加熱」と「紫外線照射」を組合せることが提
案されている。そこで、フォトレジストが塗布された半
導体ウェハを、発熱体を内蔵した金属性ホットプレート
上に載置し、このホットプレートによって加熱しながら
紫外線を照射している。Therefore, recently, it has been proposed to combine "heating" and "ultraviolet irradiation" as disclosed in, for example, JP-A-60-45247, "Photoresist Curing Method and Curing Apparatus." Therefore, a semiconductor wafer coated with photoresist is placed on a metal hot plate containing a built-in heating element, and is heated by the hot plate while being irradiated with ultraviolet rays.
又、特開昭６３−２３２３３１号等で知られているよう
に、レジストを短時間で硬化させるために減圧下て紫外
線照射する方法かある。Furthermore, as is known from Japanese Patent Application Laid-Open No. 63-232331, there is a method of irradiating ultraviolet rays under reduced pressure in order to cure the resist in a short time.
第２図は従来のレジスト処理装置の概略構成を示す図で
ある。第２図において、２１は高圧水銀灯、２２は楕円
集光鏡、２３は処理室、２４はこの処理室２３の上部に
設けられた照射窓、２５は処理室２３を真空にするため
に不図示の真空ポンプに接続される排気口、２６はウェ
ハ処理台、２７はこのウェハ処理台２６の間隙２８に設
置されたヒータ、２９はこのヒータ２８へのリード線、
１０は表面にフォトレジスト（以下レジストという）１
１を塗布したウェハて、ウェハ処理台２６に載置されて
、楕円集光鏡２２を介してランプ２１からの光照射を受
ける。FIG. 2 is a diagram showing a schematic configuration of a conventional resist processing apparatus. In FIG. 2, 21 is a high-pressure mercury lamp, 22 is an elliptical condenser mirror, 23 is a processing chamber, 24 is an irradiation window provided at the top of this processing chamber 23, and 25 is used to evacuate the processing chamber 23 (not shown). 26 is a wafer processing table, 27 is a heater installed in the gap 28 of this wafer processing table 26, 29 is a lead wire to this heater 28,
10 is a photoresist (hereinafter referred to as resist) 1 on the surface
The wafer coated with No. 1 is placed on a wafer processing table 26 and is irradiated with light from a lamp 21 via an elliptical condenser mirror 22.
第２図において、レジスト１１が塗布されたウェハ１０
は、ヒータ２７を配設したウェハ処理台２６を介して加
熱されながら、ランプ２１からの紫外線か照射されてレ
ジスト処理が行われる。それによってレジストの耐熱性
や耐プラズマエツチング性が高められる。In FIG. 2, a wafer 10 coated with a resist 11 is shown.
While being heated via a wafer processing table 26 equipped with a heater 27, resist processing is performed by irradiating the wafer with ultraviolet light from a lamp 21. This improves the heat resistance and plasma etching resistance of the resist.
第２図の装置ては、処理室２３はステンレスまたはアル
ミニウム等であるが、ヒータ２７を有するウェハ処理台
２６は熱伝導及び熱の均一性を高めるために銅、アルミ
ニウム等を用いる。In the apparatus shown in FIG. 2, the processing chamber 23 is made of stainless steel, aluminum, etc., but the wafer processing table 26 having the heater 27 is made of copper, aluminum, etc. in order to improve heat conduction and heat uniformity.
ところが、ステンレス製の処理室２３に対して、銅やア
ルミニウムのウェハ処理台２６はクリーニング、ヒータ
交換等のメンテナンスのため取外し可能とする必要か李
り、溶接することがてきないのて、処理室２３とウェハ
処理台２６の間をパツキン等を介在させて封止すること
が必要であるが、２５０℃〜３００℃程度の高温てはよ
い封止方法はない。However, unlike the stainless steel processing chamber 23, the copper or aluminum wafer processing table 26 needs to be removable for maintenance such as cleaning and heater replacement, and cannot be welded. Although it is necessary to seal the gap between the wafer processing table 23 and the wafer processing table 26 by interposing a gasket or the like, there is no good sealing method at high temperatures of about 250 to 300 degrees Celsius.
そこて、第３図に示すようにウェハ処理台２６を処理室
２３の内部に配置する方法がある。この場合、冷却水を
流すパイプ３０やヒータリード線２９がウェハ処理台２
６から処理室２３を貫通しているが、これらは、ヒータ
から十分離れており温度が低いため、パツキン等のシー
ル部材を使うことかてきる。Therefore, there is a method of arranging the wafer processing table 26 inside the processing chamber 23 as shown in FIG. In this case, the pipe 30 for flowing cooling water and the heater lead wire 29 are connected to the wafer processing table 2.
6 through the processing chamber 23, but since these are sufficiently far from the heater and the temperature is low, it is possible to use a sealing member such as a gasket.
［発明が解決しようとする課題］
上記のように、従来の装置におけるウェハ処理台の素材
として用いられる金属（銅、アルミニウム等）に対して
ヒータから熱を伝える際に、ウェハ処理台が大気中にあ
る場合は空気の対流、伝導（処理台とヒータとの接触）
、放射の三つの伝達１拡があるが、ウェハ処理台を真空
中に配設してしまった場合、ヒータとウェハ処理台との
間隙部も真空になってしまうので、空気の対流による熱
の伝達かなくなってしまう。[Problems to be Solved by the Invention] As described above, when the heater transfers heat to the metal (copper, aluminum, etc.) used as the material for the wafer processing table in conventional equipment, the wafer processing table is exposed to the atmosphere. Air convection, conduction (contact between processing table and heater)
There are three types of radiation: transmission and expansion. However, if the wafer processing table is placed in a vacuum, the gap between the heater and the wafer processing table will also be in a vacuum, so there will be no heat transfer due to air convection. Communication will be lost.
レジスト処理の方法としては、一般にウェハ処理台か５
０℃〜３００°Ｃ程度の範囲て急激な昇降温制御をする
ため、もし対流による熱の伝達方法がなくなってしまう
と、ヒータの加熱による熱の伝達は伝導と放射のみにな
ってしまい、ヒータからウェハ処理台への熱が伝わりに
くくなってしまう。その結果、ヒータとウェハ処理台と
の温度差が大きくなってしまう、このヒータとウェハ処
理台との温度差が大きいということは、ヒータ本体の加
熱温度を高くしないと、ウェハ処理台を所望の温度まで
加熱することかてきないことであり、結果としてヒータ
及びヒータ内部のヒータ線か高温となり、ヒータを短時
間に損傷する原因となり、ヒータの寿命を短くするとい
う欠点がある。Generally speaking, resist processing is performed on a wafer processing table or on a wafer processing table.
Because the temperature is rapidly raised and lowered in the range of 0°C to 300°C, if the heat transfer method by convection is lost, the only way to transfer heat due to heating by the heater is conduction and radiation, and the heater This makes it difficult for heat to transfer from the wafer processing table to the wafer processing table. As a result, the temperature difference between the heater and the wafer processing table becomes large. This large temperature difference between the heater and the wafer processing table means that unless the heating temperature of the heater body is increased, the wafer processing table can be heated to the desired temperature. As a result, the heater and the heater wire inside the heater reach a high temperature, causing damage to the heater in a short period of time and shortening the life of the heater.
本発明はヒータの損傷を防止し、ウェハ処理台の急激な
昇降温制御をに行うことのてきる、レジスト処理装置を
提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a resist processing apparatus that can prevent damage to a heater and control rapid temperature rise and fall of a wafer processing table.
［課題を解決するための手段］
上記の目的を達成するために、この発明のレジスト処理
装置は処理室と、この処理室底面より伸びる保持部材で
保持された処理台と、この処理台の内部に間隙を有して
挿入されたヒータと、該処理室外部より不活性ガスを該
処理台まて導く手段と、この不活性ガスを該処理台内の
間隙に流す手段とを具備したものである。[Means for Solving the Problems] In order to achieve the above object, the resist processing apparatus of the present invention includes a processing chamber, a processing table held by a holding member extending from the bottom of the processing chamber, and an interior of the processing table. The apparatus is equipped with a heater inserted with a gap between the processing chamber, a means for introducing an inert gas from outside the processing chamber to the processing table, and a means for flowing the inert gas into the gap inside the processing table. be.
［作用］
上記の構成を有することにより、ヒータの熱かウェハ処
理台に効率良く伝わり、ヒータの温度を低くおさえるこ
とかできるため、熱によるヒータ破損の心配もない。[Operation] With the above configuration, the heat of the heater is efficiently transmitted to the wafer processing table, and the temperature of the heater can be kept low, so there is no fear of damage to the heater due to heat.
［実施例］
第１図は本発明の一実施例であるレジスト処理装置の主
要部の概略構成を示す図で、同図（ａ）は側面図、同図
（ｂ）は同図（ａ）の線Ａ−Ａにおける平面断面図であ
る。[Embodiment] Fig. 1 is a diagram showing a schematic configuration of the main parts of a resist processing apparatus which is an embodiment of the present invention, in which (a) is a side view, and (b) is a side view. FIG.
第１図において、１はランプ、２は楕円集光鏡、３は処
理室、４は照射窓、５は処理室３を不図示の真空ポンプ
へ連結する排気口、６はウェハ処理台、７はヒータ、８
はこのヒータ７を配設するための間隙、９はヒータ７の
リード線、１２は間隙８に不活性ガスを導入するための
ガスバイブ、１３は冷却用のバイブ、１４は処理室３と
ガスバイブ１２及び冷却水用のバイブとの間に介在させ
たパツキン、１５は貫通継手、１６は処理台６の保持部
材てあり、また、第１図において、第２図と同一符号は
同一のものである。In FIG. 1, 1 is a lamp, 2 is an elliptical condenser mirror, 3 is a processing chamber, 4 is an irradiation window, 5 is an exhaust port that connects the processing chamber 3 to a vacuum pump (not shown), 6 is a wafer processing table, and 7 is the heater, 8
is a gap for arranging this heater 7, 9 is a lead wire of the heater 7, 12 is a gas vibrator for introducing inert gas into the gap 8, 13 is a cooling vibe, and 14 is the processing chamber 3 and the gas vibrator 12. 15 is a through joint, 16 is a holding member for the processing table 6, and in FIG. 1, the same reference numerals as in FIG. 2 are the same. .
次に第１図の各構成要素についてさらに詳細に説明する
と、ガスバイブ１２内を流れるガスは窒素、アルゴン等
の不活性ガスて、流量１０〜２００ＣＣ／ｍｉｎであり
、ヒータ７は、定格電力５００〜ｉｏｏｏｗて、約５０
℃〜４５０℃の温度範囲に加熱され、ウェハ処理台６は
約３０〜３００℃まて昇温する。ヒータ７は、カートリ
ッジヒータか適用される。Next, each component shown in FIG. 1 will be explained in more detail. The gas flowing inside the gas vibrator 12 is an inert gas such as nitrogen or argon, and the flow rate is 10 to 200 CC/min. iooow, about 50
The wafer processing table 6 is heated to a temperature range of 30 to 450 degrees Celsius, and the temperature of the wafer processing table 6 is increased to about 30 to 300 degrees Celsius. The heater 7 is a cartridge heater.
ウェハー処理台６は、銅あるいはアルミニウムで構成さ
れる。ウェハ処理台６としては温度を均一にする必要か
あり熱伝導度のすぐれたものかよい。また加熱処理は温
度か急激に昇降するのて熱容量を小さくする必要かあり
、できるたけ小型のものがよい。The wafer processing table 6 is made of copper or aluminum. The wafer processing table 6 needs to have a uniform temperature, so it may be one with excellent thermal conductivity. In addition, since the temperature rises and falls rapidly during heat treatment, it is necessary to reduce the heat capacity, so it is best to use as small a device as possible.
さらに、ウェハ処理台６でのガスの流路は、ヒータ７の
外周とウェハ処理台６の間には、約０．０５〜０．１ｍ
ｍの微小な間隙８があり、ここに上記ガスか流れてヒー
タ７の熱を対流によってウェハ処理台６に伝える。ヒー
タ７は、その端部等で止めネジによってウェハ処理台６
の内周面に押えつけられるような構造て保持、あるいは
抜は止めされている（図示部）。Further, the gas flow path in the wafer processing table 6 is approximately 0.05 to 0.1 m between the outer circumference of the heater 7 and the wafer processing table 6.
There is a minute gap 8 of m, through which the gas flows and transfers the heat of the heater 7 to the wafer processing table 6 by convection. The heater 7 is attached to the wafer processing table 6 by a set screw at its end or the like.
It has a structure that allows it to be pressed against the inner circumferential surface of the holder, or to prevent it from being removed (as shown).
ウェハ１０及びレジスト１１は、例えば６インチのシリ
コンウェハにレジスト（例えば東京応化製０ＦＰＲ−８
００）か３μ■の厚さでパターン化されている。このウ
ェハ１０は図示部であるか処理台に載置されている。The wafer 10 and the resist 11 are, for example, a 6-inch silicon wafer and a resist (for example, 0FPR-8 manufactured by Tokyo Ohka Co., Ltd.).
It is patterned with a thickness of 00) or 3 μm. The wafer 10 is shown in the drawing or placed on a processing table.
ウェハ処理台６は、処理室３内で保持部材１６て保持さ
れている。保持部材１６のうち１６ａは断熱のためセラ
ミツつて構成され、その他の部分は金属でできている。The wafer processing table 6 is held within the processing chamber 3 by a holding member 16 . Part 16a of the holding member 16 is made of ceramic for heat insulation, and the other parts are made of metal.
この保持部材１６によってウェハ処理台６は処理室底面
より１００ｍｍぐらい離間されている。By this holding member 16, the wafer processing table 6 is spaced apart from the bottom of the processing chamber by about 100 mm.
ガスバイブ１２は、ステンレスまたは銅製（熱伝導性の
悪いものかより好適）て、外径的７ ｍ ｍである。The gas vibrator 12 is made of stainless steel or copper (preferably one with poor thermal conductivity) and has an outer diameter of 7 mm.
冷却水用のバイブ１３は、ステンレスまたは銅製で外径
１０ｍｍのものか用いられ、ウェハ処理台６の冷却に使
用しており、上記両バイブの接合部は貫通継手１５とフ
ッソゴム系のパツキンて図のように密閉されている。The cooling water vibrator 13 is made of stainless steel or copper and has an outer diameter of 10 mm, and is used to cool the wafer processing table 6. The joint between the two vibrators is a through joint 15 and a fluoro rubber gasket. It is sealed like.
また、処理室３はステンレス製て内部を排気口に接続さ
れた不図示の真空ポンプによって、例えばｌＯ匂ｔｏｒ
ｒに減圧させる。Furthermore, the processing chamber 3 is made of stainless steel, and the interior thereof is heated by a vacuum pump (not shown) connected to an exhaust port, for example, with a lO odor.
Reduce the pressure to r.
ランプｌは定格消費電力４ ＫＷの高圧放電灯等、ある
いは低圧放電灯や金属蒸気放電灯て２２０〜３２０ｎｍ
の範囲の波長を強く発光するものか用いられる。そして
楕円集光鏡２は紫外線を効率よくかつ均一に照射するた
めに高反射率のアルミニウムミラーな用いる。The lamp l is a high-pressure discharge lamp with a rated power consumption of 4 kW, or a low-pressure discharge lamp or metal vapor discharge lamp with a wavelength of 220 to 320 nm.
A device that emits light with a strong wavelength within the range of 1 is used. The elliptical condensing mirror 2 is an aluminum mirror with high reflectance in order to efficiently and uniformly irradiate ultraviolet rays.
その他、図示部であるがウェハ処理台６の温度制御機構
、あるいはウェハ搬送機構等がある。In addition, although shown in the figure, there is a temperature control mechanism for the wafer processing table 6, a wafer transport mechanism, and the like.
また、加熱処理、紫外線照射処理の動作については、第
２図と同様であるのて説明は省略する。Furthermore, the operations of the heat treatment and the ultraviolet irradiation treatment are the same as those shown in FIG. 2, and therefore their explanations will be omitted.
第１図においては、処理室３の外部よりガスバイブ１２
にてウェハ処理台６までガスを供給する。このガスがウ
ェハ処理台６内でヒータ７の周囲を沿うように流れる。In FIG. 1, the gas vibrator 12 is connected from the outside of the processing chamber 3.
Gas is supplied to the wafer processing table 6. This gas flows around the heater 7 within the wafer processing table 6 .
このためヒータ７からの熱がガスの対流によってウェハ
処理台６に伝達されて、ウニへ１０の加熱処理が行なわ
れる。Therefore, the heat from the heater 7 is transferred to the wafer processing table 6 by gas convection, and the sea urchin is subjected to the heat treatment 10.
第４図（ａ）は、この発明の他の実施例であるリング状
ヒータを設けたウェハ処理台の主要部を示す断面図、同
図（ｂ）は同図（ａ）に用いられたリング状ヒータの斜
視図である。FIG. 4(a) is a cross-sectional view showing the main part of a wafer processing table equipped with a ring-shaped heater according to another embodiment of the present invention, and FIG. FIG.
第４図においてはガスバイブ３２から導入されたガスに
よって、ウェハ処理台３６と底板４０に囲まれた間隙３
８内のリング状のヒータ３７の熱か対流によってウェハ
処理台３６に伝えられる。In FIG. 4, the gas introduced from the gas vibrator 32 causes the gap 3 surrounded by the wafer processing table 36 and the bottom plate 40 to
The heat of the ring-shaped heater 37 in the wafer processing table 36 is transmitted to the wafer processing table 36 by convection.
従来は、ヒータの熱を、放射とわずかな点接触による伝
導とによってウェハ処理台に伝えなければならなかった
のて、ヒータが８００℃位迄昇湿していたが、第１図の
装置では不活性ガスによる対流によってヒータ７の熱の
大部分がウェハ処理台６に伝わるので、ヒータ７の加熱
温度も４５０℃程度まてとなり、熱によるヒータの損傷
も少くなった。Conventionally, heat from the heater had to be transferred to the wafer processing table by radiation and conduction through slight point contact, which caused the heater to heat up to about 800°C, but with the equipment shown in Figure 1, Since most of the heat of the heater 7 is transferred to the wafer processing table 6 by convection caused by the inert gas, the heating temperature of the heater 7 is also lowered to about 450° C., and damage to the heater due to heat is reduced.
また、特開昭５８−３２４１０号公報には、処理室内て
のプラズマエツチングによるウェハの温度上昇を抑える
目的でガスを流入することか開示されているが、この装
置はヒータを設けたものではなく、本発明のようにヒー
タからの熱によりウェハを加熱する装置において、ヒー
タを保護するためにガスを導入することにより熱を対流
させて温度の上昇、均一化を促進させる点は、新規であ
りヒータ保護の目的を充分に達せられるものである。Furthermore, Japanese Patent Application Laid-Open No. 58-32410 discloses that gas is introduced in order to suppress the temperature rise of the wafer due to plasma etching inside the processing chamber, but this device is not equipped with a heater. In an apparatus that heats a wafer using heat from a heater as in the present invention, it is novel in that a gas is introduced to protect the heater to cause heat to convect and promote temperature rise and uniformity. The purpose of protecting the heater can be fully achieved.
［発明の効果］
以上説明したとおり、本発明によればヒータとウェハ処
理台との温度差は少く、そのためウェハ処理台の加熱速
度は早く、その上ヒータを不必要に加熱することがない
のてヒータの損傷は少い。[Effects of the Invention] As explained above, according to the present invention, the temperature difference between the heater and the wafer processing table is small, so the heating speed of the wafer processing table is fast, and the heater is not heated unnecessarily. There is little damage to the heater.
第１図は本発明の一実施例であるレジスト処理装置の主
要部の概略構成を示す図て、同図（ａ）は側面図、同図
（ｂ）は同図（ａ）の線Ａ−Ａにおける平面断面図、第
２図は従来のレジスト処理装置の概略構成を示す図、第
３図は従来の他のレジスト処理装置の概略説明図、第４
図（ａ）はこの発明の他の実施例であるリング状ヒータ
を設けた、ウェハ処理台の主要部を示す断面図、同図（
ｂ）は同図（ａ）に用いられたリング状ヒータの斜視図
である。
１３・冷却水用パイプ １４：パッキン１５：貫通継手
代理人 弁理士 １）北 嵩 晴
図中。
１：ランプ
３：処理室
５：排気口
７コヒータ
９：リート線
ｌｌニレジスト
２：楕円集光鏡
４：照射窓
６：ウェハ処理台
８：間隙
０：ウェハ
２：ガスバイブ
４幅附党
ｒ
第
図
（Ｑ）
゛〜ルー−２１ラユフ
２４照銅協、
第
図
７ご一！
第
図
（ｂ）
第
図FIG. 1 is a diagram showing a schematic configuration of the main parts of a resist processing apparatus according to an embodiment of the present invention. FIG. 1(a) is a side view, and FIG. 1(b) is a line A-- FIG. 2 is a diagram showing a schematic configuration of a conventional resist processing apparatus, FIG. 3 is a schematic explanatory diagram of another conventional resist processing apparatus, and FIG.
Figure (a) is a sectional view showing the main part of a wafer processing table equipped with a ring-shaped heater according to another embodiment of the present invention.
b) is a perspective view of the ring-shaped heater used in FIG. 13. Cooling water pipe 14: Packing 15: Through joint agent Patent attorney 1) Kitatake Haruzu Naka. 1: Lamp 3: Processing chamber 5: Exhaust port 7 Coheater 9: Riet wire 1 resist 2: Elliptical condenser mirror 4: Irradiation window 6: Wafer processing table 8: Gap 0: Wafer 2: Gas vibrator 4 Width appendix r (Q) ゛～Ru-21 Rayuf 24 Terudo-kyo, Figure 7 Go! Figure (b) Figure
Claims (1)
ジスト処理装置において、 処理室と、この処理室底面より伸びる保持部材で保持さ
れた処理台と、この処理台の内部に間隙を有して挿入さ
れたヒータと、該処理室外部より不活性ガスを該処理台
まで導く手段と、この不活性ガスを該処理台内の間隙に
流す手段とを具備したことを特徴とするレジスト処理装
置。[Scope of Claims] A resist processing apparatus that performs processing by light irradiation and/or heating in a reduced pressure atmosphere, comprising a processing chamber, a processing table held by a holding member extending from the bottom of the processing chamber, and an interior of the processing table. It is characterized by comprising a heater inserted with a gap, a means for guiding an inert gas from outside the processing chamber to the processing table, and a means for flowing the inert gas into the gap in the processing table. resist processing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2182720A JP2798792B2 (en) | 1990-07-12 | 1990-07-12 | Resist processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2182720A JP2798792B2 (en) | 1990-07-12 | 1990-07-12 | Resist processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0471216A true JPH0471216A (en) | 1992-03-05 |
| JP2798792B2 JP2798792B2 (en) | 1998-09-17 |
Family
ID=16123265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2182720A Expired - Lifetime JP2798792B2 (en) | 1990-07-12 | 1990-07-12 | Resist processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2798792B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07169824A (en) * | 1993-12-13 | 1995-07-04 | Anelva Corp | Substrate heating and cooling mechanism |
| US7722395B2 (en) | 2005-01-14 | 2010-05-25 | Aisin Seiki Kabushiki Kaisha | Wire, detector having wire, and die for wire |
-
1990
- 1990-07-12 JP JP2182720A patent/JP2798792B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07169824A (en) * | 1993-12-13 | 1995-07-04 | Anelva Corp | Substrate heating and cooling mechanism |
| US7722395B2 (en) | 2005-01-14 | 2010-05-25 | Aisin Seiki Kabushiki Kaisha | Wire, detector having wire, and die for wire |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2798792B2 (en) | 1998-09-17 |
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