JPH047104B2 - - Google Patents
Info
- Publication number
- JPH047104B2 JPH047104B2 JP61307736A JP30773686A JPH047104B2 JP H047104 B2 JPH047104 B2 JP H047104B2 JP 61307736 A JP61307736 A JP 61307736A JP 30773686 A JP30773686 A JP 30773686A JP H047104 B2 JPH047104 B2 JP H047104B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- section
- semiconductor
- bonded
- image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 90
- 238000004364 calculation method Methods 0.000 claims description 20
- 238000005259 measurement Methods 0.000 claims description 16
- 230000007246 mechanism Effects 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 76
- 238000000034 method Methods 0.000 description 23
- 238000012937 correction Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 12
- 239000012535 impurity Substances 0.000 description 5
- 238000005286 illumination Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003925 fat Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Length Measuring Devices By Optical Means (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Control Of Position Or Direction (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61307736A JPS63161637A (ja) | 1986-12-25 | 1986-12-25 | 半導体ウエ−ハの位置認識装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61307736A JPS63161637A (ja) | 1986-12-25 | 1986-12-25 | 半導体ウエ−ハの位置認識装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63161637A JPS63161637A (ja) | 1988-07-05 |
| JPH047104B2 true JPH047104B2 (2) | 1992-02-07 |
Family
ID=17972641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61307736A Granted JPS63161637A (ja) | 1986-12-25 | 1986-12-25 | 半導体ウエ−ハの位置認識装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63161637A (2) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2667460B2 (ja) * | 1988-08-16 | 1997-10-27 | 株式会社東芝 | 非接触ウェハー中心位置検出装置 |
| JP5233012B2 (ja) * | 2008-10-03 | 2013-07-10 | 日新イオン機器株式会社 | イオン注入装置 |
| JP6075993B2 (ja) * | 2012-08-02 | 2017-02-08 | 株式会社ディスコ | 板状ワーク中心検出方法 |
| US10984524B2 (en) * | 2017-12-21 | 2021-04-20 | Advanced Ion Beam Technology, Inc. | Calibration system with at least one camera and method thereof |
-
1986
- 1986-12-25 JP JP61307736A patent/JPS63161637A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63161637A (ja) | 1988-07-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2022098312A (ja) | ダイボンディング装置および半導体装置の製造方法 | |
| JPH08243891A (ja) | 基板のチャンファ加工装置 | |
| JP2004288792A (ja) | アライメント装置及びアライメント方法 | |
| CN102113106B (zh) | 用于检测晶片中微小裂纹的装置及其方法 | |
| JPH047104B2 (2) | ||
| US20030178588A1 (en) | Defect detection apparatus and storage medium readable by computer | |
| CN117855123A (zh) | 晶圆校准装置和方法 | |
| US6963394B2 (en) | Inspecting device for semiconductor wafer | |
| KR102822664B1 (ko) | 절삭 장치 | |
| JP2023083014A (ja) | ウェーハの製造方法および研削装置 | |
| JPS63249349A (ja) | 半導体ウエ−ハの傾きを検出する方法 | |
| JPS63157435A (ja) | 半導体ウエ−ハの位置認識方法及びその装置 | |
| JP7734908B2 (ja) | 変質層形成装置、及び、半導体装置の製造方法 | |
| JP7766513B2 (ja) | アライメント方法 | |
| JP2021040013A (ja) | カーフの認識方法 | |
| CN119064650B (zh) | 一种基于机器视觉的无接触电致发光检测探针倾角调整装置及方法 | |
| TWI756555B (zh) | 一種晶圓缺陷檢測對位裝置 | |
| JPS6132539A (ja) | ウエハ位置決め装置 | |
| JPS6043663B2 (ja) | 自動位置制御装置 | |
| JP2908684B2 (ja) | フイルムの位置決め装置 | |
| KR102901042B1 (ko) | 투명 부재 또는 반투명 부재를 첩합한 첩합 피가공물의 연삭 방법, 및 첩합 피가공물의 연삭 장치 | |
| JP2024135911A (ja) | ワーク外観検査装置及び方法 | |
| JPS6235638A (ja) | ウエハ自動位置合わせ装置 | |
| JP2686606B2 (ja) | テンプレート登録方法 | |
| JP3184640B2 (ja) | ボンディングワイヤ検査装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |