JPH0470814A - Liquid crystal panel and production thereof - Google Patents
Liquid crystal panel and production thereofInfo
- Publication number
- JPH0470814A JPH0470814A JP18643790A JP18643790A JPH0470814A JP H0470814 A JPH0470814 A JP H0470814A JP 18643790 A JP18643790 A JP 18643790A JP 18643790 A JP18643790 A JP 18643790A JP H0470814 A JPH0470814 A JP H0470814A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- liquid crystal
- film
- crystal panel
- indium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 42
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000009713 electroplating Methods 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 7
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 6
- 239000005751 Copper oxide Substances 0.000 claims description 6
- 229910000431 copper oxide Inorganic materials 0.000 claims description 6
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 5
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 claims description 5
- QYCVHILLJSYYBD-UHFFFAOYSA-L copper;oxalate Chemical compound [Cu+2].[O-]C(=O)C([O-])=O QYCVHILLJSYYBD-UHFFFAOYSA-L 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 5
- ODWXUNBKCRECNW-UHFFFAOYSA-M bromocopper(1+) Chemical compound Br[Cu+] ODWXUNBKCRECNW-UHFFFAOYSA-M 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- GSYXIGDIZRBXJH-UHFFFAOYSA-N triphenylindigane Chemical compound C1=CC=CC=C1[In](C=1C=CC=CC=1)C1=CC=CC=C1 GSYXIGDIZRBXJH-UHFFFAOYSA-N 0.000 claims description 4
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 claims description 3
- RMUKCGUDVKEQPL-UHFFFAOYSA-K triiodoindigane Chemical compound I[In](I)I RMUKCGUDVKEQPL-UHFFFAOYSA-K 0.000 claims description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 1
- YGLIFDACLKVYLS-UHFFFAOYSA-N tri(cyclopenta-2,4-dien-1-yl)indigane Chemical compound C1(C=CC=C1)[In](C1C=CC=C1)C1C=CC=C1 YGLIFDACLKVYLS-UHFFFAOYSA-N 0.000 claims 1
- 239000004020 conductor Substances 0.000 abstract description 13
- 229910052751 metal Inorganic materials 0.000 abstract description 13
- 239000002184 metal Substances 0.000 abstract description 13
- 238000000206 photolithography Methods 0.000 abstract description 4
- 238000007639 printing Methods 0.000 abstract description 4
- 238000007740 vapor deposition Methods 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract 4
- 229910018054 Ni-Cu Inorganic materials 0.000 abstract 1
- 229910018481 Ni—Cu Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 20
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- MKHQMLKDCBPKBC-UHFFFAOYSA-N benzene;copper(1+) Chemical compound [Cu+].C1=CC=[C-]C=C1 MKHQMLKDCBPKBC-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000007645 offset printing Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000004988 Nematic liquid crystal Substances 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- IZBSGLYEQXJERA-UHFFFAOYSA-N [In].[Ni].[Cu] Chemical compound [In].[Ni].[Cu] IZBSGLYEQXJERA-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- 239000004375 Dextrin Substances 0.000 description 1
- 229920001353 Dextrin Polymers 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- FRMWILDUNAMBBH-UHFFFAOYSA-L [Cu]=O.C(C)(=O)[O-].[Cu+2].C(C)(=O)[O-] Chemical compound [Cu]=O.C(C)(=O)[O-].[Cu+2].C(C)(=O)[O-] FRMWILDUNAMBBH-UHFFFAOYSA-L 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 235000019425 dextrin Nutrition 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002471 indium Chemical class 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
Landscapes
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、液晶パヱルとその製法に関する。特に液晶パ
ネルの基板の透明電極の電気抵抗を著しく低下させるこ
とに関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a liquid crystal panel and a method for producing the same. In particular, it relates to significantly lowering the electrical resistance of transparent electrodes on substrates of liquid crystal panels.
従来の技術
液晶パネルを構成する基板上の透明電極の電気抵抗を十
分小さくすることの重要性は、常に強調されてきた。現
在公知の技術範囲で実現し得る透明電極の電気抵抗値は
、不十分である。この結果として、液晶パネルの表示品
位の低下を招く（「フラットバフル・デイスプレィ、１
９９０Ｊ日経 ＢＰ社、電子グループ編）。BACKGROUND OF THE INVENTION The importance of sufficiently reducing the electrical resistance of transparent electrodes on substrates constituting liquid crystal panels has always been emphasized. The electrical resistance value of the transparent electrode that can be realized within the currently known technical range is insufficient. As a result, the display quality of the liquid crystal panel deteriorates (“flat baffle display, 1
990J Nikkei BP, Electronics Group).
前述の対策として、帯状の透明電極に沿って、かつ電気
的接触をこの透明電極と保つように、金属導体層を設け
、実質的に透明電極の電気抵抗を著しく低下させること
が行われている。この目的のために、抵抗率の観点から
アルミニウム等が材質として使われる。製法としては、
蒸着法及びフォトリソグラフィー法が一般に使われる。As a countermeasure to the above, a metal conductor layer is provided along the band-shaped transparent electrode so as to maintain electrical contact with the transparent electrode, thereby substantially reducing the electrical resistance of the transparent electrode. . For this purpose, aluminum or the like is used as a material from the viewpoint of resistivity. As for the manufacturing method,
Vapor deposition and photolithography methods are commonly used.
発明が解決しようとする課題
しかしながら、従来の液晶バフル構成では、金属導体層
をなすアルミニウムは軟らかく、液晶パネルの製造中に
傷が入りやすく、種々のトラブルを招きがちであった。Problems to be Solved by the Invention However, in the conventional liquid crystal baffle configuration, the aluminum forming the metal conductor layer is soft and easily scratched during manufacturing of the liquid crystal panel, which tends to cause various troubles.
また、蒸着法及びフォトリソグラフィー法は如何にも製
造コストの上昇を招（方法である。In addition, the vapor deposition method and the photolithography method inevitably increase manufacturing costs.
課題を解決するための手段
本発明は前述のような課題を解決するために、第１又は
第２基板の主面上に、互いに絶縁された帯状の電極群が
構成され、この電極群は透明電極群とこの各透明電極の
一部の上に、インジウムニッケルー銅の積層物、または
インジウム−銅の積層物、または銅の単層が存在するよ
うにし、これらの基板の主面を所定の間隙をもって対向
させ、この間隙に、液晶を充填されてなることを特徴と
するような液晶パネルを提供するものである。Means for Solving the Problems In order to solve the above-mentioned problems, the present invention includes a band-shaped electrode group insulated from each other on the main surface of the first or second substrate, and this electrode group is made of a transparent material. An indium nickel-copper laminate, an indium-copper laminate, or a copper single layer is present on the electrode group and a portion of each transparent electrode, and the main surfaces of these substrates are The object of the present invention is to provide a liquid crystal panel, which is characterized in that the panels are opposed to each other with a gap between them, and the gap is filled with liquid crystal.
本発明は、転写プロセスにより、上記のような液晶パネ
ルの製法も明らかにする。すなわち、フィルム上に所定
形状の銅膜を形成し、この上にインジウム膜を電気鍍金
法で形成し、これを第１又は第２の基板に転移させるこ
とを特徴とするような液晶パネルの製法を明らかにする
。The present invention also reveals a method for manufacturing the above liquid crystal panel using a transfer process. That is, a method for producing a liquid crystal panel characterized by forming a copper film in a predetermined shape on a film, forming an indium film on this by electroplating, and transferring this to a first or second substrate. reveal.
また、フィルム上に所定形状の銅膜を形成し、この上に
二、ケル膜とインジウム膜をこの順に電気鍍金で形成し
、これを第１又は第２の基板に転移させることを特徴と
するような液晶パネルの製法をも明らかにする。It is also characterized in that a copper film of a predetermined shape is formed on the film, a second Kel film and an indium film are formed on this film by electroplating in this order, and this is transferred to the first or second substrate. We will also clarify the manufacturing method for such LCD panels.
さらに、フィルム上に塩化銅、臭化銅、酸化銅酢酸銅ま
たはシュウ酸銅を含むペーストからなる所定形状厚膜を
形成し、次に還元することを特徴とするような液晶パネ
ルの製法をも明らかにする。Furthermore, a method for producing a liquid crystal panel is provided, which comprises forming a thick film in a predetermined shape on a film from a paste containing copper chloride, copper bromide, copper oxide copper acetate, or copper oxalate, and then reducing the film. reveal.
本発明はまた、液晶パネルを構成する第１又は第２基板
の主面上に、更に厳密に言えば、各透明電極の一部の上
に、直接、インジウム−銅の積層物、または銅の単層を
形成する方法をも開示する。The present invention also provides an indium-copper laminate or a copper laminate directly on the main surface of the first or second substrate constituting the liquid crystal panel, more precisely on a part of each transparent electrode. A method of forming a monolayer is also disclosed.
すなわち、第１又は第２基板の主面上に、互いに絶縁さ
れた帯状の電極群が構成され、この電極群は透明電極群
とこの各透明電極の一部の上に、塩化銅、臭化銅、酸化
銅、酢酸銅、フェニル銅またはシュウ酸銅を含むペース
トからなる所定形状厚膜を形成し、次に還元することを
特徴とするような液晶パネルの製法を明らかにする。That is, a strip-shaped electrode group insulated from each other is formed on the main surface of the first or second substrate, and this electrode group includes copper chloride, bromide, etc. A method for manufacturing a liquid crystal panel is clarified, which is characterized by forming a thick film in a predetermined shape from a paste containing copper, copper oxide, copper acetate, phenyl copper, or copper oxalate, and then reducing the paste.
さらに、第１又は第２基板の主面上に、互いに絶縁され
た帯状の電極群が構成され、この電極群は透明を極群と
この各透明電極の一部の上に、塩化インジウム、臭化イ
ンジウム、ヨウ化インジウム、トリス（ノクロベンタジ
エニル）インジウムまたはトリフェニルインジウムを含
むペーストからなる所定形状厚膜を形成し、その上に塩
化銅臭化銅、酸化銅、酢酸銅、フェニル銅またはシ工つ
鍍銅を含むペーストからなる所定形状厚膜を形成し、次
に還元することを特徴とするような液晶パネルの製法を
明らかにするものである。Furthermore, a strip-shaped electrode group insulated from each other is formed on the main surface of the first or second substrate. A thick film of a predetermined shape is formed from a paste containing indium oxide, indium iodide, tris(nochlobentadienyl)indium, or triphenyl indium, and then copper chloride, copper bromide, copper oxide, copper acetate, copper phenyl, or silver is applied on top of the paste. The present invention clarifies a method for manufacturing a liquid crystal panel, which is characterized by forming a thick film in a predetermined shape from a paste containing plating copper, and then reducing the film.
作用
従来のような蒸着法及びフォトリソグラフィー法によっ
て、金属導体層を形成しないで、印刷法ないし電気鍍金
法と簡易な還元法を用いるので、製造コストは低減する
。Function: Since the metal conductor layer is not formed by the conventional vapor deposition method or photolithography method, but by using a printing method or electroplating method and a simple reduction method, manufacturing costs are reduced.
また銅はアルミニウムに比べて硬く、ラビング処理等、
液晶パネル製造中に傷が入る等のトラブルはより少なく
なる傾向にある。Copper is also harder than aluminum and requires rubbing treatment, etc.
Problems such as scratches during LCD panel manufacturing tend to be less common.
実施例 実施例１ 以下、本発明の詳細な説明する。Example Example 1 The present invention will be explained in detail below.
第１図はこの発明の一実施例の手順を示すための液晶パ
ネルの構成断面図である。同図において、１．２は例え
ば、透明ガラスからなる第１及び第２基板、３，４は主
面上の、例えばＩＴＯ膜からなる矩形状の透明な導ｔ′
を極、５．６はインジウム−ニッケル−銅の積層物、ま
たはインジウム−銅の積層物、または銅の単層等からな
る金属導体層、７，８は配向膜、９は液晶層、１０は液
晶組成物である。FIG. 1 is a sectional view of the structure of a liquid crystal panel for showing the procedure of an embodiment of the present invention. In the figure, reference numerals 1 and 2 denote first and second substrates made of, for example, transparent glass; 3 and 4 denote rectangular transparent conductors t' made of, for example, an ITO film on the main surfaces;
is an electrode, 5.6 is a metal conductor layer made of an indium-nickel-copper laminate, an indium-copper laminate, or a single layer of copper, 7 and 8 are alignment films, 9 is a liquid crystal layer, and 10 is a It is a liquid crystal composition.
主面に微細加工されたＩＴＯ電極３．４を有するガラス
基板を入手する。A glass substrate having a microfabricated ITO electrode 3.4 on its main surface is obtained.
市販のポリイミド・フィルムの表面をカップラー処理し
、この上に平均粒径、１ミクロン以下の塩化銅をメチル
エチルケトン主体の溶液に混練し、インクとなし、フレ
キソ・オフセント印刷法で所望の形状のインク層を形成
し、更に溶液成分を澤発させた。The surface of a commercially available polyimide film is treated with a coupler, and on top of this, copper chloride with an average particle size of 1 micron or less is kneaded into a solution mainly composed of methyl ethyl ketone to form an ink, and an ink layer of the desired shape is printed using a flexographic offset printing method. was formed, and further solution components were released.
次に、これを簡易真空槽に入れ、水素プラズマにさらし
た。水素プラズマはグロー放電によった。Next, this was placed in a simple vacuum chamber and exposed to hydrogen plasma. Hydrogen plasma was generated by glow discharge.
かくて、塩化銅は実質的に銅に還元された。この還元効
果はポリイミド・フィルムを約１００ ’Ｃに加温する
と顕著な効果があった。次に電気鍍金法で、いわゆるワ
ット浴（硫酸ニッケル、塩化ニッケル、ホウ酸の水溶液
、ＰＨ６程度のニンケル鍍金液）を使って約０．２ミク
ロン程度のニッケル層を前記銅の上に沈積させた。さら
に、同しく電気鍍金法でインジウム金属をこの上に沈積
させる。Thus, the copper chloride was substantially reduced to copper. This reduction effect was noticeable when the polyimide film was heated to about 100'C. Next, by electroplating, a nickel layer of about 0.2 microns was deposited on the copper using a so-called Watts bath (an aqueous solution of nickel sulfate, nickel chloride, and boric acid, and a nickel plating solution with a pH of about 6). . Furthermore, indium metal is deposited thereon by the same electroplating method.
浴は塩化インジウム ４０（ｇ／ｊり、 シアン化カ
リウム １５０ （ｇ／Ｌ）、水酸化カリウム３０（ｇ
／ｆ）、デキストリン ４５（ｇ／／りの水溶液を調合
した。水溶液のＰＨは１３程度、鍍金時の環境温度は１
８ないし２５℃であった。The bath contained indium chloride 40 (g/L), potassium cyanide 150 (g/L), and potassium hydroxide 30 (g/L).
/f), Dextrin 45 (g//liter) aqueous solution was prepared.The pH of the aqueous solution was about 13, and the environmental temperature during plating was 1.
The temperature was between 8 and 25°C.
かくて、金属導体層を得る。Thus, a metal conductor layer is obtained.
このインジウムは第１及び第２基板上のＩＴＯ膜からな
る矩形状の透明な導電電極に、これらの金属導体層を転
写させる時、転写の確率をあげ、また導電電極と金属導
体層の接着力を大幅に向上させる。This indium increases the probability of transfer when these metal conductor layers are transferred to the rectangular transparent conductive electrodes made of ITO films on the first and second substrates, and also increases the adhesive strength between the conductive electrodes and the metal conductor layer. significantly improve.
次に、第１ないし第２の基板とポリイミド・フィルムと
を、矩形状の透明な導電電極と金属導体層を対向、密着
させるように、しかも互いの位置を所望の欅に合わせ、
密着させる。適当に加圧し、同時に約１２０°Ｃに加温
、しかも全体を窒素雰囲気で行なった。Next, the first and second substrates and the polyimide film are aligned so that the rectangular transparent conductive electrode and the metal conductor layer face each other and are in close contact with each other, and their positions are aligned with each other in a desired shape.
Bring it into close contact. Appropriate pressure was applied and the mixture was simultaneously heated to about 120°C, and the entire process was carried out in a nitrogen atmosphere.
かくて、基板上の矩形状の透明な導電電極の一部の上に
、しかも所望の位置に金属導体層を転写し得た。ポリイ
ミド・フィルムと導電電極との離型は問題とはならなか
った。In this way, the metal conductor layer could be transferred onto a portion of the rectangular transparent conductive electrode on the substrate at a desired position. There was no problem with mold release between the polyimide film and the conductive electrode.
これらの基板を使用して、慣習的な方法で液晶パネルを
作った。Using these substrates, liquid crystal panels were made using conventional methods.
液晶がネマチック液晶の場合、表示に、特有のクロスト
ークがほとんど認知し難い程度に抑制された。従来の透
明な導電電極のみを有する基板から構成された液晶パネ
ルの表示と比較して、差異は一目瞭然である。When the liquid crystal was a nematic liquid crystal, the peculiar crosstalk in the display was suppressed to the extent that it was hardly perceptible. The difference is immediately obvious when compared to the display of a conventional liquid crystal panel constructed from a substrate having only transparent conductive electrodes.
液晶が強誘電性液晶の場合、電極の電圧減衰が大幅に小
さくなる故か、表示の均一性が大きく改善される。When the liquid crystal is a ferroelectric liquid crystal, the uniformity of display is greatly improved, probably because the voltage attenuation of the electrodes is significantly reduced.
実施例２
実施例１と同様に、但し、ニッケルの電気鍍金操作を省
略して、液晶パスルを作成した。Example 2 A liquid crystal panel was produced in the same manner as in Example 1, except that the nickel electroplating operation was omitted.
表示の特性は実施例１と同様であり、本発明の効果は発
揮された。The display characteristics were the same as in Example 1, and the effects of the present invention were demonstrated.
実施例３
主面に微細加工されたＩ Ｔ Ｏｉｉｉ ３ 、 ４を
有するガラス基板を入手する。Example 3 A glass substrate having I T Oiii 3 and 4 microfabricated on its main surface is obtained.
前記基板上に平均粒径、１ミクロン以下のフェニル銅を
メチルエチルケトン主体の溶液に混練し、インクとなし
、フレキソ・オフセット印刷法で所望の形状のインク層
を形成し、更に溶液成分を蒸発させた。この時には、Ｉ
ＴＯ１１極の所望の位置に、インク層が印刷されるよう
、印￥１版の調整が重要となる。On the substrate, phenyl copper with an average particle size of 1 micron or less was kneaded into a solution mainly consisting of methyl ethyl ketone to form an ink, an ink layer of a desired shape was formed by flexo offset printing, and the solution components were evaporated. . At this time, I
It is important to adjust the printing plate so that the ink layer is printed at the desired position of the TO11 pole.
次に、これを簡易真空槽に入れ、水素プラズマにさらし
た。水素プラズマはグロー放ｔによった。Next, this was placed in a simple vacuum chamber and exposed to hydrogen plasma. Hydrogen plasma was generated by glow radiation.
かくて、フェニル銅は実質的に銅に還元された。Thus, the phenyl copper was substantially reduced to copper.
この還元効果は基板を約１００°Ｃに加温すると顕著な
効果があった。This reduction effect was noticeable when the substrate was heated to about 100°C.
これらの基板を使用して、慣習的な方法で液晶パネルを
作った。Using these substrates, liquid crystal panels were made using conventional methods.
液晶がネマチック液晶の場合、表示に、特有のクロスト
ークがほとんど認知し難い程度に抑制された。従来の透
明な導電電極のみを有する基板から構成された液晶パネ
ルの表示と比較して、差異は一目瞭然である。When the liquid crystal was a nematic liquid crystal, the peculiar crosstalk in the display was suppressed to the extent that it was hardly perceptible. The difference is immediately obvious when compared to the display of a conventional liquid crystal panel constructed from a substrate having only transparent conductive electrodes.
液晶が強誘電性液晶の場合、電極の電圧減衰が大幅に小
さくなる故か、表示の均一性が大きく改善される。When the liquid crystal is a ferroelectric liquid crystal, the uniformity of display is greatly improved, probably because the voltage attenuation of the electrodes is significantly reduced.
実施例４
主面に微細加工されたＩＴＯｔｉ３．４を有するガラス
基板を入手する。Example 4 A glass substrate having ITOti3.4 microfabricated on its main surface is obtained.
前記基板上に、この時には、ＩＴＯｔ極の所望の位置に
、平均粒径、１ミクロン以下のトリフェニルインジウム
をポリビニルアルコール主体の溶液に混練し、インクと
なし、フレキソ・オフセット印刷法で所望の形状のイン
ク層を形成し、更に溶液成分を蒸発させた。On the substrate, at this time, at a desired position of the ITOt electrode, triphenyl indium with an average particle size of 1 micron or less is kneaded into a polyvinyl alcohol-based solution to form an ink, and the desired shape is printed using a flexographic offset printing method. An ink layer was formed, and the solution components were further evaporated.
つぎに、この生乾きのインク層の上に、平均粒径、１ミ
クロン以下のフェニル銅をメチルエチルケトン主体の溶
液に混練し、インクとなし、フレキソ・オフセント印刷
法で所望の形状のインク層を形成し、更に溶液成分を蒸
発させた。Next, on top of this half-dried ink layer, phenyl copper with an average particle size of 1 micron or less is kneaded into a solution mainly composed of methyl ethyl ketone to form an ink, and an ink layer with a desired shape is formed using a flexographic offset printing method. , further evaporated the solution components.
これらの時には、ＩＴＯ電極の所望の位置にインク層が
印刷されるよう、印刷版の調整が重要となる。In these cases, it is important to adjust the printing plate so that the ink layer is printed on the desired position of the ITO electrode.
次に、これを簡易真空槽に入れ、水素プラズマにさらし
た。水素プラズマはグロー放電によった。Next, this was placed in a simple vacuum chamber and exposed to hydrogen plasma. Hydrogen plasma was generated by glow discharge.
かくて、トリフェニルインジウムはインジウムに、フェ
ニル銅は実質的に銅に還元された。この還元効果は基板
を約１００°Ｃに加温すると顕著な効果があった。Thus, triphenyl indium was reduced to indium and phenyl copper was substantially reduced to copper. This reduction effect was noticeable when the substrate was heated to about 100°C.
これらの基板を使用して、慣習的な方法で液晶パネルを
作った。Using these substrates, liquid crystal panels were made using conventional methods.
液晶がネマチック液晶の場合、表示に、特有のクロスト
ークがほとんど認知し難い程度に抑制された。従来の透
明な導電電極のみを有する基板から構成された液晶パネ
ルの表示と比較して、差異は一目瞭然である。When the liquid crystal was a nematic liquid crystal, the peculiar crosstalk in the display was suppressed to the extent that it was hardly perceptible. The difference is immediately obvious when compared to the display of a conventional liquid crystal panel constructed from a substrate having only transparent conductive electrodes.
液晶が強誘電性液晶の場合、電極の電圧減衰が大幅に小
さくなる故か、表示の均一性が大きく改善される。When the liquid crystal is a ferroelectric liquid crystal, the uniformity of display is greatly improved, probably because the voltage attenuation of the electrodes is significantly reduced.
発明の効果
以上本発明は、表示特性の優れた液晶パネルをコストを
低減して供給するものである。Effects of the Invention The present invention provides a liquid crystal panel with excellent display characteristics at reduced cost.
第１図は本発明の一実施例によって得られる液晶パネル
の概略断面図である。
１・・・・・・第１基板、２・・・・・・第２基板、３
．４・・・・・・透明な導電電極、５，６・・・・・・
インジウム−ニッケル−銅の積層物、またはインジウム
−銅の積層物、または銅の単層等からなる金属導体層、
７．８・・・・・・配向膜、９・・・・・・液晶層、１
０・・・・・・液晶組成物。FIG. 1 is a schematic cross-sectional view of a liquid crystal panel obtained according to an embodiment of the present invention. 1...First substrate, 2...Second substrate, 3
．． 4...Transparent conductive electrode, 5,6...
A metal conductor layer consisting of an indium-nickel-copper laminate, an indium-copper laminate, a single layer of copper, etc.
7.8...Alignment film, 9...Liquid crystal layer, 1
0...Liquid crystal composition.
Claims (6)
帯状の電極群が構成され、この電極群は透明電極群とこ
の各透明電極の一部の上に、インジウム−ニッケル−銅
の積層物、またはインジウム−銅の積層物、または銅の
単層が存在するようにし、これらの基板の主面を所定の
間隙をもって対向させ、この間隙に、液晶を充填されて
なることを特徴とする液晶パネル。(1) A strip-shaped electrode group insulated from each other is formed on the main surface of the first or second substrate. A copper laminate, an indium-copper laminate, or a single layer of copper is present, the main surfaces of these substrates are opposed to each other with a predetermined gap, and this gap is filled with liquid crystal. Characteristic LCD panel.
インジウム膜を電気鍍金法で形成し、これを第１又は第
２の基板に転移させることを特徴とする請求項（１）記
載の液晶パネルの製法。(2) Claim (1) characterized in that a copper film of a predetermined shape is formed on the film, an indium film is formed thereon by electroplating, and this is transferred to the first or second substrate. The manufacturing method of the liquid crystal panel described.
ニッケル膜とインジウム膜をこの順に電気鍍金で形成し
、これを第１又は第２の基板に転移させることを特徴と
する請求項（１）記載の液晶パネルの製法。(3) A claim characterized in that a copper film of a predetermined shape is formed on a film, a nickel film and an indium film are formed on the film in this order by electroplating, and this is transferred to the first or second substrate. A method for manufacturing a liquid crystal panel according to item (1).
たはシュウ酸銅を含むペーストからなる所定形状厚膜を
形成し、次に還元することを特徴とする請求項（２）ま
たは（３）記載の液晶パネルの製法。(4) A thick film of a predetermined shape made of a paste containing copper chloride, copper bromide, copper oxide, copper acetate or copper oxalate is formed on the film and then reduced. (3) Manufacturing method of the liquid crystal panel described.
帯状の電極群が構成され、この電極群は透明電極群とこ
の各透明電極の一部の上に、塩化銅、臭化銅、酸化銅、
酢酸銅、フェニル銅またはシュウ酸銅を含むペーストか
らなる所定形状厚膜を形成し、次に還元することを特徴
とする請求項（１）記載の液晶パネルの製法。(5) A strip-shaped electrode group insulated from each other is formed on the main surface of the first or second substrate, and this electrode group includes copper chloride, odor Copper oxide, copper oxide,
2. The method for manufacturing a liquid crystal panel according to claim 1, wherein a thick film in a predetermined shape is formed from a paste containing copper acetate, copper phenyl, or copper oxalate, and then reduced.
帯状の電極群が構成され、この電極群は透明電極群とこ
の各透明電極の一部の上に、塩化インジウム、臭化イン
ジウム、ヨウ化インジウム、トリス（シクロペンタジエ
ニル）インジウム、またはトリフェニルインジウムを含
むペーストからなる所定形状厚膜を形成し、その上に塩
化銅、臭化銅、酸化銅、酢酸銅、フェニル銅またはシュ
ウ酸銅を含むペーストからなる所定形状厚膜を形成し、
次に還元することを特徴とする請求項（１）記載の液晶
パネルの製法。(6) A strip-shaped electrode group insulated from each other is formed on the main surface of the first or second substrate, and this electrode group includes indium chloride, odor, A thick film of a predetermined shape is formed from a paste containing indium chloride, indium iodide, tris(cyclopentadienyl)indium, or triphenyl indium, and copper chloride, copper bromide, copper oxide, copper acetate, or phenyl is deposited on top of the paste. A thick film of a predetermined shape is formed from a paste containing copper or copper oxalate,
2. The method for manufacturing a liquid crystal panel according to claim 1, further comprising reducing the liquid crystal panel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18643790A JPH0470814A (en) | 1990-07-12 | 1990-07-12 | Liquid crystal panel and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18643790A JPH0470814A (en) | 1990-07-12 | 1990-07-12 | Liquid crystal panel and production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0470814A true JPH0470814A (en) | 1992-03-05 |
Family
ID=16188433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18643790A Pending JPH0470814A (en) | 1990-07-12 | 1990-07-12 | Liquid crystal panel and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0470814A (en) |
-
1990
- 1990-07-12 JP JP18643790A patent/JPH0470814A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6040056A (en) | Transparent electrically conductive film-attached substrate and display element using it | |
| US20090242887A1 (en) | Display Substrate Having a Transparent Conductive Layer Made of Zinc Oxide and Manufacturing Method Thereof | |
| KR100812504B1 (en) | Deposition method of conductive and high hardness carbon thin film and the application as the electrodes for thin-film electroluminescent device | |
| JPS63104023A (en) | Electro-optical device | |
| JP3426660B2 (en) | In-line type sputtering equipment | |
| US5151379A (en) | Method for manufacturing a color filter | |
| JPH0470814A (en) | Liquid crystal panel and production thereof | |
| JP3094421B2 (en) | Method for forming transparent conductive film | |
| JP3265399B2 (en) | Continuous formation method of silicon oxide film and transparent conductive film | |
| JPH06160876A (en) | Transparent electrode plate and its production | |
| JP3489844B2 (en) | Transparent conductive film and method for producing the same | |
| JPS58206008A (en) | Method of forming transparent conductive laminate | |
| JP4038846B2 (en) | Manufacturing method of color filter for liquid crystal display device | |
| CN218647648U (en) | Double-sided ITO copper conductive film | |
| JPH0713147A (en) | Color filter substrate and liquid crystal display element | |
| JPH0455823A (en) | Liquid crystal display panel and production of low-resistance electrode substrate | |
| JPH07146480A (en) | Manufacture of color filter board with transparent electroconductive film | |
| JPH1020319A (en) | Wiring board, production of wiring board, liquid crystal element formed by using the wiring board and production of the liquid crystal element | |
| US20210356809A1 (en) | Color Filter Substrate, Method for Fabricating Same, and Liquid Crystal Display Panel Comprising Same | |
| JP3618913B2 (en) | Manufacturing method of liquid crystal display device | |
| JPS6131471B2 (en) | ||
| JP2000164887A (en) | Semiconductor device | |
| KR920000833B1 (en) | Thin film transistor | |
| JPH1150230A (en) | Production of ito film as well as electrode substrate and its production | |
| JPH11322333A (en) | High transmittance transparent conductive film and its production |