JPH0469825A - Photodetector - Google Patents
PhotodetectorInfo
- Publication number
- JPH0469825A JPH0469825A JP2183309A JP18330990A JPH0469825A JP H0469825 A JPH0469825 A JP H0469825A JP 2183309 A JP2183309 A JP 2183309A JP 18330990 A JP18330990 A JP 18330990A JP H0469825 A JPH0469825 A JP H0469825A
- Authority
- JP
- Japan
- Prior art keywords
- light
- reflected
- total reflection
- prism
- reflection film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 230000003287 optical effect Effects 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000001681 protective effect Effects 0.000 claims description 3
- 230000004907 flux Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 39
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Optical Head (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は光ティスフ装置等の光学的に情報を記録・再生
消去する光ヘットに関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an optical head for optically recording, reproducing and erasing information, such as an optical tisf device.
従来の技術
近年、光デイスク装置の小型化・高速化・低価格化に伴
い、小型化・構成の簡易化・部品の低価格化が、急速に
進みつつある。BACKGROUND OF THE INVENTION In recent years, as optical disk devices have become smaller, faster, and cheaper, they have rapidly become smaller, have simpler configurations, and lower prices of parts.
第7図は、光デイスク装置の小型化・構成の簡易化・部
品の低価格化を実現するものとして、特開昭64−33
735号に提案された光ヘッドの斜視図を示すものであ
る。Fig. 7 shows the Japanese Patent Application Laid-Open No. 64-33 as an optical disk device that realizes miniaturization, simplification of structure, and lower cost of parts.
735 shows a perspective view of the optical head proposed in No. 735.
第7図において、lは全体としての光ヘット装置を示し
、矩形状のシリコン等の半導体基板2にティスフ9から
の反射光を検出するPINダイオード等の受光素子から
なる第1の光検出器3を形成する。第1の光検出器3は
、2組の受光素子3a、3bからなり、さらに、それぞ
れ3分割されている。更に、半導体基板2に、光源であ
る半導体レーザ5の光量を検出する第2の光検出器4が
形成される。これら第1及び第2の光検出器3.4間の
半導体基板21に半導体レーザ5が半田層11で固定さ
れている。半導体基板2上は保護層により覆われている
。台形断面のプリズム6は第1の光検出素子3上の保護
N10に接着剤等により固定される。このプリズム6の
、半導体レーザー5の発光点と対向している面に形成さ
れたハーフミラ−6aは、半透明反射面とされ、下面6
bは、受光素子3aに対向する部分は半透過膜で、その
他の部分は全透過膜とし、上面6Cは、全反射面とされ
ている。In FIG. 7, l indicates the optical head device as a whole, and a first photodetector 3 consisting of a light receiving element such as a PIN diode for detecting the reflected light from the TiSF 9 is mounted on a rectangular semiconductor substrate 2 made of silicon or the like. form. The first photodetector 3 consists of two sets of light receiving elements 3a and 3b, each of which is divided into three parts. Furthermore, a second photodetector 4 is formed on the semiconductor substrate 2 to detect the amount of light from the semiconductor laser 5 serving as the light source. A semiconductor laser 5 is fixed to a semiconductor substrate 21 between the first and second photodetectors 3.4 with a solder layer 11. The top of the semiconductor substrate 2 is covered with a protective layer. The prism 6 having a trapezoidal cross section is fixed to the protection N10 on the first photodetecting element 3 with an adhesive or the like. A half mirror 6a formed on the surface of the prism 6 facing the light emitting point of the semiconductor laser 5 is a semi-transparent reflective surface, and the lower surface 6a is a semi-transparent reflective surface.
In b, the portion facing the light-receiving element 3a is a semi-transmissive film, the other portions are a fully-transmissive film, and the upper surface 6C is a total-reflective surface.
上述の構成において、半導体レーザ5の発光点から放射
した出射光7aは、プリズム6のハーフミラ−6aで反
射され、入射光7bは対物レンズ8に入射され、ディス
ク9上に集光する。ディスク9て反射された反射光はプ
リズム6のハーフミラ−6aを透過し、第1の光検出器
3の受光素子3aに入射され、ここで反射した反射光7
dはプリズムの6cで反射され、受光素子3bに入射さ
れて、ディスク9の情報である記録信号の再生・焦点誤
差信号・トラッキング誤差信号を検出する。In the above-described configuration, the outgoing light 7a emitted from the light emitting point of the semiconductor laser 5 is reflected by the half mirror 6a of the prism 6, and the incident light 7b enters the objective lens 8 and is focused onto the disk 9. The reflected light reflected by the disk 9 passes through the half mirror 6a of the prism 6, enters the light receiving element 3a of the first photodetector 3, and is reflected by the reflected light 7.
The light d is reflected by the prism 6c and is incident on the light receiving element 3b, where the reproduction of the recorded signal, the focus error signal, and the tracking error signal, which are the information on the disk 9, are detected.
尚、第2の光検出器4は、半導体レーザ5の反対例の発
光点から出射される後ろ出射光7Cを受光して、半導体
レーザー5の出射光7aのパワーを制御する。The second photodetector 4 receives the rear emitted light 7C emitted from the opposite light emitting point of the semiconductor laser 5, and controls the power of the emitted light 7a of the semiconductor laser 5.
このような従来の光ヘットにおいては、上述の第7図に
示される光ヘットの部分拡大図である第8図に示す詳細
構成がとられる。Such a conventional optical head has a detailed configuration shown in FIG. 8, which is a partially enlarged view of the optical head shown in FIG. 7 mentioned above.
半導体基板2上に形成された保護N10上にプリズム6
が接着剤N12により固定されている。A prism 6 is placed on the protection N10 formed on the semiconductor substrate 2.
is fixed with adhesive N12.
プリズム6の保護層lOに接触する下面61)における
受光素子3aに対応する部分には、lO〜2ON程度の
多層光半透過膜13が、真空蒸着等により形成されてい
る。On the lower surface 61) of the prism 6 in contact with the protective layer IO, a multilayer light semi-transparent film 13 of about IO to 2ON is formed by vacuum evaporation or the like on a portion corresponding to the light receiving element 3a.
このようなプリズム6のハーフミラ一部6aを透過して
プリズム6内に入射した反射光7dは、プリズム6内を
直進して多層光半透過膜13に入射し、入射した光量の
略半分が多層光半透過膜13を透過し、さらに接着剤p
M12及び保護層lOを透過して受光素子3aに到達す
る。The reflected light 7d that has passed through the half-mirror part 6a of the prism 6 and entered the prism 6 travels straight through the prism 6 and enters the multilayer light semi-transmissive film 13, and approximately half of the amount of the incident light is reflected by the multilayer light. The light passes through the semi-transparent film 13, and then the adhesive p
The light passes through M12 and the protective layer IO and reaches the light receiving element 3a.
また、残る他の反射光7bは、多層光半透過膜13によ
りプリズム6の内部に反射され、さらにプリズム6の上
面6Cにおいて再度反射されて、接着ff112・保護
層10を透過して受光素子3bに到達する。すなわち、
本多層光半透過膜13は、プリズム6に入射したディス
クからの反射光7dを、受光素子3aと受光素子3bに
略半分に光量分割している。The remaining reflected light 7b is reflected inside the prism 6 by the multilayer light transmissive film 13, is further reflected again at the upper surface 6C of the prism 6, and is transmitted through the adhesive ff112 and the protective layer 10 to the light receiving element 3b. reach. That is,
The multilayer light semi-transmissive film 13 divides the amount of reflected light 7d from the disk that is incident on the prism 6 into approximately half of the light receiving element 3a and the light receiving element 3b.
したがって、プリズム6の下面6Cに形成される多層光
半透過膜13は、受光素子3aに対向する位置に且つ、
隣接する受光素子3b1にはみ出さないように精度よく
形成することが必要とされる。Therefore, the multilayer light semi-transmissive film 13 formed on the lower surface 6C of the prism 6 is located at a position facing the light receiving element 3a, and
It is necessary to form it accurately so that it does not protrude into the adjacent light receiving element 3b1.
発明が解決しようとする課題
しかしながら、プリズム6の製作においては、真空蒸着
にて数種類の薄膜を多数重ねて形成して、多層光半透過
膜13を形成する。また、多層光年透明膜13を蒸着時
に、受光素子3aに対向する位置に限定して形成するた
め、マスク蒸着法がとられる。即ち、金属製のマスクを
プリズム6に押し当て、必要とする箇所のみに蒸着する
ようにする。このマスク蒸着は、マスクとプリズム6の
位置合わせ精度や、押し当て接触状態次第で、膜の形成
位置精度が劣化する。Problems to be Solved by the Invention However, in manufacturing the prism 6, a multilayer light semi-transparent film 13 is formed by stacking a large number of several types of thin films by vacuum evaporation. Further, in order to form the multilayer light-year transparent film 13 only at a position facing the light receiving element 3a during vapor deposition, a mask vapor deposition method is used. That is, a metal mask is pressed against the prism 6 so that the vapor is deposited only on the necessary locations. In this mask vapor deposition, the accuracy of the film formation position deteriorates depending on the alignment accuracy between the mask and the prism 6 and the pressing contact state.
第7図に示す光ヘットは、小型であり、したがってプリ
ズム6も極めて小さく上記多層光半透過膜13を形成す
る位置精度も20071m程度が必要とされる。The optical head shown in FIG. 7 is small, and accordingly, the prism 6 is also extremely small, and the positional accuracy for forming the multilayer light semi-transparent film 13 is required to be about 20071 m.
このように、本多層光半透過膜13を形成して光ヘッド
を構成することは、多層膜の蒸着コスト・膜形成の位置
精度不良・反射率透過率精度のばらつき等による歩留り
の低下等により、高価なものとなってしまう不都合があ
った。As described above, forming an optical head by forming the present multilayer light semi-transmissive film 13 is difficult due to the reduction in yield due to the cost of vapor deposition of the multilayer film, poor positional accuracy of film formation, variation in reflectance and transmittance accuracy, etc. However, it has the disadvantage that it becomes expensive.
本発明は、上記従来の光ヘットの課題を考慮し、光ヘッ
ドに利用し得る、全反射膜を利用した光検知器を提供す
ることを目的とする。SUMMARY OF THE INVENTION The present invention has been made in consideration of the problems of the conventional optical head described above, and an object of the present invention is to provide a photodetector using a total reflection film that can be used in an optical head.
課題を解決するための手段
請求項1の本発明は、半導体基板に設けられ、光を検知
する光センサと、その半導体基板上に形成された全反射
膜と、その全反射膜を被覆する状態で前記半導体基板上
に形成された保護膜と、前記半導体基板の北に配置され
たプリズムとを備え、前記全反射膜は、入射された光を
全反射し、前記プリズムを介して前記光センサへ導くも
のであることを特徴とする光検知器である。Means for Solving the Problems The present invention as claimed in claim 1 provides an optical sensor provided on a semiconductor substrate to detect light, a total reflection film formed on the semiconductor substrate, and a state covering the total reflection film. a protective film formed on the semiconductor substrate and a prism disposed on the north side of the semiconductor substrate, the total reflection film totally reflects the incident light and passes it through the prism to the optical sensor. This is a photodetector characterized in that it leads to
請求項2の本発明は、請求項Iの本発明において、全反
射膜が、入射してくる光の一部を遮ることによって前記
プリズム側へ反射し、残る光をそのまま通過させ、それ
によって、光を前記半導体基板上に設けられた少なくと
も2個の光センサに導くものであることを特徴とする請
求項l記載の光検知器である。The present invention according to claim 2 is the invention according to claim I, in which the total reflection film blocks part of the incident light and reflects it toward the prism, and allows the remaining light to pass through as it is, thereby: The photodetector according to claim 1, characterized in that the photodetector guides light to at least two photosensors provided on the semiconductor substrate.
作用
本発明は、全反射膜によって、入射された光を全反射し
、プリズムを介して光センサへ導く。In the present invention, the incident light is totally reflected by the total reflection film and guided to the optical sensor via the prism.
また、本発明は、その様な全反射膜の配置を、入射して
くる光の一部を遮ることの出来る位置とし、それによっ
て、光の一部を反射し、又残る光をそのまま通過させる
。そして、分割された光の導かれる先に形成した光セン
サて光を検知する。Furthermore, the present invention places such a total reflection film at a position where it can block part of the incident light, thereby reflecting part of the light and allowing the remaining light to pass through as is. . Then, the light is detected by an optical sensor formed at the end where the divided light is guided.
実施例
以下に本発明の実施例を図画を参照して説明す第1図は
、本発明の光ヘットの一実施例のi44間、第2図は、
第1図の部分拡大図を断面で示し、第3図は光検出手段
と光検出手段上のスボ・ントの間係を示す。EXAMPLE Below, an example of the present invention will be explained with reference to drawings. Fig. 1 shows an example of an optical head according to the present invention.
A partially enlarged view of FIG. 1 is shown in cross section, and FIG. 3 shows the relationship between the light detecting means and the substrate on the light detecting means.
同図において、1は全体としての光へ・ソト装置を示し
、矩形状のシリコン等の半導体基板2にディスク9から
の反射光を検出する光センサの一例としての光検出器3
が形成されている。例えは、PINダイオードである。In the figure, reference numeral 1 denotes an overall light output/isolation device, and a photodetector 3 as an example of an optical sensor detects reflected light from a disk 9 on a rectangular semiconductor substrate 2 made of silicon or the like.
is formed. An example is a PIN diode.
この光検出器3は、受光素子3a、受光素子3bからな
る。尚、受光素子の上は5i02等の保護膜が形成され
ている。第2図に示すように、この受光素子3aと3b
間で、且つ保護層lOを介して半導体基板2上にアルミ
ニウム等の全反射膜14が形成されている。全反射膜1
4は、PINダイオード製作中にPINダイオードの構
成材料であるアルミニウムで形成できる。また、全反射
膜14は、単層の蒸着であるため、簡単にまた、エツチ
ングにより容易に精度よいパターンが得られる。This photodetector 3 consists of a light receiving element 3a and a light receiving element 3b. Note that a protective film such as 5i02 is formed on the light receiving element. As shown in FIG. 2, these light receiving elements 3a and 3b
A total reflection film 14 made of aluminum or the like is formed between them and on the semiconductor substrate 2 with a protective layer IO in between. Total reflection film 1
4 can be formed from aluminum, which is a constituent material of the PIN diode, during manufacture of the PIN diode. Furthermore, since the total reflection film 14 is a single layer deposited, a highly accurate pattern can be easily obtained by etching.
また、第1図のように、半導体基板2に光源である半導
体レーザ5の光量を検出する別の光センサの一例として
の光検出器4が形成される。これら光検出器3.4間の
半導体基板2に半導体レーザ5が半田[11て固定され
ている。第2図に示すように、半導体基板2上は保護N
10により覆われている。台形断面のプリズム6は光検
出素子3上の保護N10に接着剤等により固定される。Further, as shown in FIG. 1, a photodetector 4 is formed on the semiconductor substrate 2 as an example of another photosensor for detecting the amount of light from a semiconductor laser 5 serving as a light source. A semiconductor laser 5 is fixed to the semiconductor substrate 2 between these photodetectors 3 and 4 by soldering [11]. As shown in FIG. 2, the top of the semiconductor substrate 2 is protected by N
covered by 10. The prism 6 having a trapezoidal cross section is fixed to the protection N10 on the photodetecting element 3 with adhesive or the like.
このプリズム6の半導体レーザ−50発光点と対向して
いる面であるハーフミラ−6aは、半透明反射面とされ
、下面6bは、全面全透過のガラス素材であり、膜形成
を全く必要としない。上面6Cは、全反射面とされてい
る。The half mirror 6a, which is the surface of the prism 6 facing the light emitting point of the semiconductor laser 50, is a semi-transparent reflective surface, and the lower surface 6b is made of a glass material that is completely transparent, and does not require any film formation. . The upper surface 6C is a total reflection surface.
上述の構成において、半導体レーザ5の発光点から放射
した出射光7aは、プリズム6のハーフミラ−6aで反
射され、入射光7bは対物レンズ8に入射され、ディス
ク9上に集光する。ディスク9て反射された反射光7d
はプリズム6のハーフミラ−6aを透過し、プリズム6
の下面6bから出射して、接着剤12・保護層10を透
過する。In the above-described configuration, the outgoing light 7a emitted from the light emitting point of the semiconductor laser 5 is reflected by the half mirror 6a of the prism 6, and the incident light 7b enters the objective lens 8 and is focused onto the disk 9. Reflected light 7d reflected by the disk 9
passes through the half mirror 6a of the prism 6, and
The light is emitted from the lower surface 6b and passes through the adhesive 12 and the protective layer 10.
更に、反射光7bの略半円状の半分の光束のみ、全反射
膜14に反射されず受光素1−3aに入射される。他方
、反射光7dの残りの半円杖光束は、全反射膜14にて
反射され、更にプリズムの6Cて反射され、受光素子3
bに入射する。第3図はその様子を示す平面図である。Further, only the approximately semicircular half of the reflected light 7b is not reflected by the total reflection film 14 and is incident on the light receiving element 1-3a. On the other hand, the remaining semicircular cane beam of the reflected light 7d is reflected by the total reflection film 14, further reflected by the prism 6C, and is reflected by the light receiving element 3.
incident on b. FIG. 3 is a plan view showing the situation.
即ち、木全反射膜14は、光束を空間的に略半分に分割
することにより、光量を略半分分は且つ、通過光と反射
光を各受光素子3a、3bに導く。ディスク9の情報の
検出は、例えはCDであれば信号の再生は、光検出器3
の出力の総和であり、焦点誤差信号は第3図に示す検出
て第4図の信号が得られ、トラッキング誤差信号の検出
は、ファーフィールド法により受光素子3aあるいは、
3bの両側セルの差動にて得られる。100は差動アン
プである。尚、光検出器4は、半導体レーザ5の反対側
の発光点から出射される後ろ出射光7dを受光して、半
導体レーザー5の出射光7aのパワーを制御する。That is, the tree total reflection film 14 spatially divides the luminous flux into approximately half, thereby approximately halving the amount of light and guiding the transmitted light and reflected light to the respective light receiving elements 3a and 3b. To detect the information on the disc 9, for example, if it is a CD, to reproduce the signal, use the photodetector 3.
The focus error signal is detected as shown in FIG. 3, and the signal shown in FIG. 4 is obtained. The tracking error signal is detected by the far field method using the light receiving element 3a or
It is obtained by differential operation of cells on both sides of 3b. 100 is a differential amplifier. Note that the photodetector 4 receives the rear emitted light 7d emitted from the light emitting point on the opposite side of the semiconductor laser 5, and controls the power of the emitted light 7a of the semiconductor laser 5.
次に、他の実施例を説明する。Next, another embodiment will be described.
第5図は、本発明の第2の実施例の光ヘットの斜視図を
示す。FIG. 5 shows a perspective view of an optical head according to a second embodiment of the present invention.
本実施例は、本発明の第1図に示す光ヘッドに対して、
全反射膜の配置を変えたもので、反射光7dの進行方向
く矢印15の方向)にスポットと光検出器の位置ずれが
発生しても、検出誤差のでないようにしたものである。In this embodiment, for the optical head shown in FIG. 1 of the present invention,
The arrangement of the total reflection film is changed, so that even if a positional shift occurs between the spot and the photodetector in the traveling direction of the reflected light 7d (in the direction of arrow 15), there will be no detection error.
すなわち、ディスク9て反射された反射光7dはプリズ
ム6のハーフミラ−6aを透過し、プリズム6の下面6
bから出射して、接着剤12・保護層10を透過する。That is, the reflected light 7d reflected by the disk 9 is transmitted through the half mirror 6a of the prism 6, and is transmitted through the lower surface 6 of the prism 6.
The light is emitted from b and passes through the adhesive 12 and the protective layer 10.
全反射膜14は、矢印15の方向に光スポットの半分を
切るように配置されている。従って、光の半分はそのま
ま通過して受光素子3aに入射され、残る半分の光はそ
の全反射膜14によって反射され、受光素子3bへ入射
される。第6図は、光検出器3と光スポットの位置関係
を示す。The total reflection film 14 is arranged so as to cut half of the light spot in the direction of the arrow 15. Therefore, half of the light passes through and enters the light receiving element 3a, and the remaining half of the light is reflected by the total reflection film 14 and enters the light receiving element 3b. FIG. 6 shows the positional relationship between the photodetector 3 and the light spot.
その他構成・動作は、第1.2図の実施例と同様である
。ディスクの情報の検出は、前記同様であるが、焦点位
置検出について、第6図に示す構成によって行われる。Other configurations and operations are similar to the embodiment shown in FIG. 1.2. Detection of disc information is the same as described above, but focus position detection is performed by the configuration shown in FIG. 6.
尚、以上の実施例は、半導体基板上の全反射膜て光束分
割して、光検出器に導く事例のみを述べたが、光束を分
割せずに光束全体を全反射して、プリズム等の代替とし
て構成した光検知器についても、本発明は包含するもの
である。In the above embodiments, only the case where the light beam is split by the total reflection film on the semiconductor substrate and guided to the photodetector is described. Alternative configurations of photodetectors are also encompassed by the present invention.
なお、本発明に係る光検知器は、光ヘットだけに限らず
、他の製品にも応用可能である。Note that the photodetector according to the present invention is applicable not only to optical heads but also to other products.
発明の効果
以上の説明から明らかなように、請求項1の本発明によ
れは、半導体基板Eに全反射膜を配して、全反射させ光
センサへ導くので、従来高価であったプリズムの構成を
簡素化し、製作を容易にする事が出来る。従って、この
光検知器を利用する事によって、安価な光ヘッドを提供
出来るものである。Effects of the Invention As is clear from the above description, according to the present invention as claimed in claim 1, a total reflection film is disposed on the semiconductor substrate E, and the total reflection is guided to the optical sensor. The configuration can be simplified and manufacturing can be facilitated. Therefore, by using this photodetector, an inexpensive optical head can be provided.
また、請求項20本発明によれば、従来のような多層半
反射膜の蒸着コスト・膜形成の位置精度不良・反射率透
過率精度のばらつき等による歩留りの低下等が全く無い
ので、優れた光検知器を提供できる。従フて、この光検
知器を利用する事によって、安価な光ヘッドを提供出来
るものである。Furthermore, according to the present invention as claimed in claim 20, there is no reduction in yield due to the vapor deposition cost of multilayer semi-reflective films, poor positional accuracy of film formation, variations in reflectance/transmittance accuracy, etc., as in the prior art. We can provide photodetectors. Therefore, by using this photodetector, an inexpensive optical head can be provided.
第1図は本発明の第1の実施例の光ヘッドの斜視図、第
2図は同部分拡大の断面図、第3図は第1の実施例の光
検出器とスポットの関係を示す模式的平面図、第4図は
第1の実施例の焦点誤差信号の特性を示すグラフ、第5
図は本発明の第2の実施例の光ヘッドの斜視図、第6図
は第2の実施例の光検出器とスポットの関係を示す模式
的平面図、第7図は従来の光ヘッドの斜視図、第8図は
同部分拡大の断面図である。
2・・・半導体基板、3.4・・・光検出器、3a、3
b・・・光センサ、5・・・半導体レーザ、6・・・プ
リズム、8・・・対物レンズ、14・・・全反射膜。FIG. 1 is a perspective view of an optical head according to a first embodiment of the present invention, FIG. 2 is an enlarged sectional view of the same portion, and FIG. 3 is a schematic diagram showing the relationship between a photodetector and a spot in the first embodiment. FIG. 4 is a graph showing the characteristics of the focus error signal of the first embodiment, and FIG.
The figure is a perspective view of an optical head according to a second embodiment of the present invention, FIG. 6 is a schematic plan view showing the relationship between a photodetector and a spot in the second embodiment, and FIG. 7 is a diagram of a conventional optical head. The perspective view and FIG. 8 are enlarged cross-sectional views of the same portion. 2... Semiconductor substrate, 3.4... Photodetector, 3a, 3
b... Optical sensor, 5... Semiconductor laser, 6... Prism, 8... Objective lens, 14... Total reflection film.
Claims (1)
、その半導体基板上に形成された全反射膜と、その全反
射膜を被覆する状態で前記半導体基板上に形成された保
護膜と、前記半導体基板の上に配置されたプリズムとを
備え、前記全反射膜は、入射された光を全反射し、前記
プリズムを介して前記光センサへ導くものであることを
特徴とする光検知器。(2)全反射膜は、入射してくる
光の一部を遮ることによって前記プリズム側へ反射し、
残る光をそのまま通過させ、それによって、光を前記半
導体基板上に設けられた少なくとも2個の光センサに導
くものであることを特徴とする請求項1記載の光検知器
。(1) An optical sensor provided on a semiconductor substrate to detect light, a total reflection film formed on the semiconductor substrate, and a protective film formed on the semiconductor substrate in a state covering the total reflection film. , a prism disposed on the semiconductor substrate, and the total reflection film totally reflects the incident light and guides it to the optical sensor via the prism. vessel. (2) The total reflection film blocks part of the incident light and reflects it toward the prism,
2. The photodetector according to claim 1, wherein the remaining light is allowed to pass through, thereby guiding the light to at least two photosensors provided on the semiconductor substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2183309A JPH0469825A (en) | 1990-07-10 | 1990-07-10 | Photodetector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2183309A JPH0469825A (en) | 1990-07-10 | 1990-07-10 | Photodetector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0469825A true JPH0469825A (en) | 1992-03-05 |
Family
ID=16133434
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2183309A Pending JPH0469825A (en) | 1990-07-10 | 1990-07-10 | Photodetector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0469825A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08153889A (en) * | 1994-11-29 | 1996-06-11 | Sony Corp | Composite optical apparatus and manufacture thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63306548A (en) * | 1987-06-08 | 1988-12-14 | Sony Corp | Optical pickup device |
JPH01213840A (en) * | 1988-02-23 | 1989-08-28 | Sony Corp | Optical integrated circuit device |
JPH01315036A (en) * | 1988-03-18 | 1989-12-20 | Sony Corp | Optical pickup device |
-
1990
- 1990-07-10 JP JP2183309A patent/JPH0469825A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63306548A (en) * | 1987-06-08 | 1988-12-14 | Sony Corp | Optical pickup device |
JPH01213840A (en) * | 1988-02-23 | 1989-08-28 | Sony Corp | Optical integrated circuit device |
JPH01315036A (en) * | 1988-03-18 | 1989-12-20 | Sony Corp | Optical pickup device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08153889A (en) * | 1994-11-29 | 1996-06-11 | Sony Corp | Composite optical apparatus and manufacture thereof |
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