JPH0466658A - Method for plasma carburizing and plasma carburizing apparatus - Google Patents

Method for plasma carburizing and plasma carburizing apparatus

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Publication number
JPH0466658A
JPH0466658A JP17709790A JP17709790A JPH0466658A JP H0466658 A JPH0466658 A JP H0466658A JP 17709790 A JP17709790 A JP 17709790A JP 17709790 A JP17709790 A JP 17709790A JP H0466658 A JPH0466658 A JP H0466658A
Authority
JP
Japan
Prior art keywords
carburized
heating
plasma
high frequency
carburizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17709790A
Other languages
Japanese (ja)
Inventor
Katsumi Suzuki
克己 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP17709790A priority Critical patent/JPH0466658A/en
Publication of JPH0466658A publication Critical patent/JPH0466658A/en
Pending legal-status Critical Current

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  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)

Abstract

PURPOSE:To stably form a thin carburized layer at high speed by using high frequency induction heating as the heating for the object to be carburized. CONSTITUTION:In a plasma carburizing method, the object to be carburized is heated by using high-frequency induction heating. By the high frequency, the object to be carburized is rapidly heated, and the heating is stopped at the moment when the temp. of only the surface rises to >= the A3 transformation point. When the high frequency is impressed and stopped, plasma is left to generate for a time in which the material to be carburized is in high temperature so that the solid soln. depth of C and the concn. can stably be controlled. At the time of increasing the frequency and shortening the impressing time, only the shallowest part on the surface layer of the object to be carburized can be carburized. Furthermore, because the heating is one for only the surface by high frequency, after the carburization, it is naturally hardened, so that oil hardening generally executed can be obviated.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はプラズマ浸炭における加熱方法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a heating method in plasma carburizing.

〔従来の技術〕[Conventional technology]

従来のプラズマ浸炭における加熱方式は抵抗加熱ヒータ
ーや赤外線ヒーターを用いて被浸炭物を十分に加熱し均
熱状態にしていた。これは被浸炭物の形状には複雑なも
のが多(全体が均一に加熱されていないとプラズマ浸炭
時にCの固溶、拡散にムラが生じ歪、ワレ、浸炭深さ規
準を満足しない等不良が出るからである。しかしこの方
式では均一に浸炭は入るが浸炭深さが0.5閣以上とな
ってしまい薄肉の被浸炭物(例えば厚さ0.2 m )
に浅い浸炭層(例えば0.05 tan )を形成する
のは不可能であった。すなわち例えば低炭素鋼を浅(浸
炭する場合、A、変態点直上の温度で被浸炭物を保持し
、わずかな時間プラズマを発生させ浸炭するということ
になる。プラズマは発生後しばら(しないと安定化しな
いため個々の浸炭深さのバラツキが非常に太き(なって
しまう。
Conventional heating methods for plasma carburizing use resistance heaters or infrared heaters to sufficiently heat the carburized material to a uniform temperature state. This is because the shape of the object to be carburized is often complex (if the whole part is not heated uniformly, solid solution and diffusion of C will be uneven during plasma carburizing, resulting in defects such as distortion, cracking, and failure to meet carburizing depth standards) However, although this method carburizes uniformly, the depth of carburization becomes more than 0.5 mm, which results in thin carburized objects (for example, 0.2 m thick).
It was impossible to form a shallow carburized layer (for example, 0.05 tan) in the steel. In other words, for example, when carburizing low carbon steel, the material to be carburized is held at a temperature just above the transformation point and carburized by generating plasma for a short time. Because the carburizing depth does not change, the individual carburizing depths vary greatly.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

以上の様に従来技術では0.5闇以下の浅い浸炭層を安
定して形成することができないという課題を有する。
As described above, the conventional technology has a problem in that it is not possible to stably form a shallow carburized layer of 0.5 mm or less.

そこで本発明はこの課題を解決するものであって、その
目的とするところは薄い浸炭層を高速でかつ安定して得
ることにある。
The present invention is intended to solve this problem, and its purpose is to obtain a thin carburized layer at high speed and stably.

〔課題を解決するための手段〕[Means to solve the problem]

プラズマ浸炭方法において被浸炭物の加熱に高周波誘導
加熱を用いることを特徴としている。
The plasma carburizing method is characterized by using high-frequency induction heating to heat the object to be carburized.

〔実施例〕〔Example〕

本発明実施例では被浸炭物に1%St@を用いた。通常
のガス浸炭法では浸炭が難しい材料であるがプラズマ浸
炭により浸炭できる。被浸炭物の厚さは0.2 rye
sであり目標の浸炭深さは0.05+m+である。この
被浸炭物をプラズマ浸炭装置内に入れ真空に引いた後プ
ロパンガスとArを導入した。
In the examples of the present invention, 1% St@ was used for the carburized material. This material is difficult to carburize using normal gas carburizing methods, but it can be carburized using plasma carburizing. The thickness of the carburized material is 0.2 rye
s, and the target carburizing depth is 0.05+m+. This carburized material was placed in a plasma carburizing device and evacuated, and then propane gas and Ar were introduced.

ガス圧は0.5 p aであった。次にプラズマを発生
させ被浸炭物にCイオンを引き寄せる電位を印加する。
Gas pressure was 0.5 pa. Next, a potential is applied to generate plasma and attract C ions to the carburized material.

この時は被浸炭物は低温であるのでほとんどCは固溶、
拡散しない。次に高周波により被浸炭物を急速に加熱、
表面のみA3変態点以上になった瞬間に加熱を止める。
At this time, the carburized material is at a low temperature, so most of the C is dissolved in solid solution.
Does not spread. Next, the carburized material is rapidly heated by high frequency.
Stop heating the moment only the surface reaches the A3 transformation point or higher.

加熱中はプラズマに変動がおこるが加熱を止めればその
瞬間元にもどるすなわち被浸炭物の表面がA、変態点以
上に加熱されている瞬間に表面のみにCが固溶する。C
の固溶深さ、濃度は従来技術の様にプラズマのわずかな
発生時間で制御するのではなく高周波のかけ方によって
決定できる。例えば周波数、印加時間等である。高周波
を印加、停止する間、被浸炭物が高温である間はプラズ
マは発生したままであるので安定したCの固溶深さ、濃
度の制御ができる。周波数を高め、印加時間を短かくす
ると(1〜2 sec )被浸炭物の表層のごく浅いと
ころのみ浸炭できる。加熱時のプラズマの変動はCの固
溶に寄与しない。これは高周波印加がご(わずかな時間
のためCの固溶が高周波印加後に主に行なわれているた
めと思われる。
Fluctuations occur in the plasma during heating, but as soon as heating is stopped, it immediately returns to its original state, that is, the surface of the carburized object is A, and at the moment when it is heated above the transformation point, C is solidly dissolved only on the surface. C
The solid solution depth and concentration of can be determined by applying high frequency, rather than controlling by the short plasma generation time as in the prior art. For example, frequency, application time, etc. Since the plasma continues to be generated while the carburized material is at a high temperature while the high frequency is applied and stopped, the depth and concentration of C solid solution can be stably controlled. If the frequency is increased and the application time is shortened (1 to 2 sec), only a very shallow part of the surface layer of the object to be carburized can be carburized. Fluctuations in the plasma during heating do not contribute to solid solution of C. This is thought to be because the solid solution of C is mainly carried out after the high frequency application because the high frequency is only applied for a short period of time.

以上の方法、装置により1%Skiに0.05±0、0
05間の精度で浸炭深さを制御できた。
With the above method and device, 1%Ski is 0.05±0,0
The carburizing depth could be controlled with an accuracy of 0.05 to 0.05.

〔発明の効果〕〔Effect of the invention〕

以上述べた様にプラズマ浸炭法において被浸炭物の加熱
に高周波誘導加熱を用いることにより、0、5 mm以
下の浅い浸炭も安定して形成できるという効果を有する
。更に高周波による表面のみの加熱であるため浸炭後自
然に焼きが入り、一般に行なわれている油焼入れを省略
できるという効果も合わせもつ。
As described above, by using high-frequency induction heating to heat the object to be carburized in the plasma carburizing method, it is possible to stably form carburization as shallow as 0.5 mm or less. Furthermore, since only the surface is heated by high frequency, quenching occurs naturally after carburizing, which also has the effect of omitting the commonly used oil quenching.

以上 出願人 セイコーエプソン株式会社that's all Applicant: Seiko Epson Corporation

Claims (2)

【特許請求の範囲】[Claims] (1)プラズマ浸炭方法において被浸炭物の加熱に高周
波誘導加熱を用いることを特徴とするプラズマ浸炭方法
(1) A plasma carburizing method characterized in that high-frequency induction heating is used to heat the object to be carburized.
(2)プラズマ浸炭装置において被浸炭物の加熱に高周
波誘導加熱を用いることを特徴とするプラズマ浸炭装置
(2) A plasma carburizing apparatus characterized in that high-frequency induction heating is used to heat the object to be carburized.
JP17709790A 1990-07-04 1990-07-04 Method for plasma carburizing and plasma carburizing apparatus Pending JPH0466658A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17709790A JPH0466658A (en) 1990-07-04 1990-07-04 Method for plasma carburizing and plasma carburizing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17709790A JPH0466658A (en) 1990-07-04 1990-07-04 Method for plasma carburizing and plasma carburizing apparatus

Publications (1)

Publication Number Publication Date
JPH0466658A true JPH0466658A (en) 1992-03-03

Family

ID=16025088

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17709790A Pending JPH0466658A (en) 1990-07-04 1990-07-04 Method for plasma carburizing and plasma carburizing apparatus

Country Status (1)

Country Link
JP (1) JPH0466658A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0811697A3 (en) * 1996-06-06 1999-01-27 Dowa Mining Co., Ltd. Method and apparatus for carburizing, quenching and tempering

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0811697A3 (en) * 1996-06-06 1999-01-27 Dowa Mining Co., Ltd. Method and apparatus for carburizing, quenching and tempering

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