JPH0465840A - Resin-sealed semiconductor device and its manufacture - Google Patents

Resin-sealed semiconductor device and its manufacture

Info

Publication number
JPH0465840A
JPH0465840A JP2177590A JP17759090A JPH0465840A JP H0465840 A JPH0465840 A JP H0465840A JP 2177590 A JP2177590 A JP 2177590A JP 17759090 A JP17759090 A JP 17759090A JP H0465840 A JPH0465840 A JP H0465840A
Authority
JP
Japan
Prior art keywords
wire
cover
resin
capillary
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2177590A
Other languages
Japanese (ja)
Inventor
Noriko Murakami
紀子 村上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP2177590A priority Critical patent/JPH0465840A/en
Publication of JPH0465840A publication Critical patent/JPH0465840A/en
Pending legal-status Critical Current

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    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To improve humidity resistance by using a bonding wire coated with low-hygroscopicity material, and cutting off the permeation rout of water content. CONSTITUTION:A capillary 22 is equiped with a double cover constituted of a first cover 24 and a second cover 25, and low-hygroscopicity material 26, e.g., epoxy resin which is highly filled with silica is supplied. In the stated that the first cover 24 is closed, an Au wire is supplied through a capillary 21; the tip of the Au wire 21 is fused by using hydrogen flame or electric discharge; an Au ball 23 whose size is about twice the wire diameter is formed. The capillary 22 is made to descend, and the Au ball 23 is thermally compression bonded on an Al electrode 28 on a silicon chip 27 by applying a specified pressure for a specified time. Just after that, the lower end portion is pulled up by operating a first cover 24, and a nozzle is opened. Thereby low- hygroscopicity material 26 can be spread on the periphery of the Au wire 21.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は、リードフレームのアイランド部に半導体チッ
プをダイスボンドし、該チップ上の電極とリードフレー
ムのインナリード部をワイヤボンドしたものを樹脂封止
してなる半導体装置及びその製造方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention involves die-bonding a semiconductor chip to an island portion of a lead frame, and wire-bonding electrodes on the chip and inner lead portions of the lead frame using resin. The present invention relates to a sealed semiconductor device and a manufacturing method thereof.

（従来の技術） 従来、このような分野の技術としては、例えば以下に示
すようなものがあった。(Prior Art) Conventionally, as technologies in this field, there have been the following, for example.

第４図はかかる従来の樹脂封止半導体装置の断面図であ
る。FIG. 4 is a sectional view of such a conventional resin-sealed semiconductor device.

この図に示すように、Ｓｉチップｌがリードフレームの
アイランド部２にダイスポンド材３でダイスボンドされ
、更に、Ｓｉチップ１上の電極４とリードフレームのイ
ンナリード５をワイヤ６でワイヤボンディングされたも
のが樹脂７で封止されている。As shown in this figure, the Si chip 1 is die-bonded to the island portion 2 of the lead frame using a die bonding material 3, and furthermore, the electrode 4 on the Si chip 1 and the inner lead 5 of the lead frame are wire-bonded using a wire 6. The parts are sealed with resin 7.

このような従来の樹脂封止半導体装置のワイヤボンディ
ング工程を第５図を参照しながら説明する。The wire bonding process for such a conventional resin-sealed semiconductor device will be explained with reference to FIG.

ここでは、熱圧着法によるワイヤボンディングについて
説明する。Here, wire bonding using a thermocompression bonding method will be explained.

まず、第５図（ａ）に示すように、Ａｕワイヤ１１はキ
ャピラリ１２を通して供給され、水素炎または電気放電
によってＡｕワイヤ１１の先端を溶融させ、線維の約２
倍の大きさのＡｕポール１３を形成する。First, as shown in FIG. 5(a), the Au wire 11 is supplied through the capillary 12, and the tip of the Au wire 11 is melted by hydrogen flame or electric discharge, and about 20% of the fibers are melted.
An Au pole 13 of twice the size is formed.

次に、第５図（ｂ）に示すように、キャピラリ１２を鋒
下し、シリコンチップ１４上のＡ！電極１５上に所定の
加圧と時間をかけ熱圧着させる。その後、第５図（ｃ）
及び第５図（ｄ）に示すように、Ａ２電極１５とインナ
リート１６間で導通がとれるようにＡｕワイヤ１１を熱
圧着し、この部分でＡｕワイヤ１１をクランプ１７で固
定し、キャピラリ１２がインナリード１６と離れると同
時に、Ａｕワイヤ１１が切れるようにする。Next, as shown in FIG. 5(b), the capillary 12 is lowered and the A! It is thermocompressed onto the electrode 15 by applying a predetermined pressure and time. After that, Fig. 5(c)
And as shown in FIG. 5(d), the Au wire 11 is thermocompressed so as to establish conduction between the A2 electrode 15 and the inner lead 16, and the Au wire 11 is fixed at this part with the clamp 17, so that the capillary 12 is connected to the inner lead. The Au wire 11 is made to break at the same time as it separates from the lead 16.

（発明が解決しようとする課題） しかしながら、上記構成の樹脂封止型半導体装置ではイ
ンナリードと封止樹脂の界面及びワイヤと封止樹脂の界
面を伝わって水分が浸入し、Ｓｉチンプ上のアルミ電極
或いはＡ１配線部分を腐食させてしまうという問題点が
あった。(Problem to be Solved by the Invention) However, in the resin-sealed semiconductor device with the above configuration, moisture infiltrates through the interface between the inner lead and the sealing resin and the interface between the wire and the sealing resin, and the aluminum on the Si chip There was a problem that the electrode or the A1 wiring part was corroded.

本発明は、以上述べたインナリード、ワイヤと樹脂の界
面を伝わってチップ上に水分が入り、チップ上のＡｆ電
極或いはＡＡ配線部分を腐食させるという問題点を除去
するため、ワイヤに吸湿率の低い物質を塗布し、耐湿性
の優れた樹脂封止型半導体装置及びその製造方法を提供
することを目的とする。In order to eliminate the above-mentioned problem that moisture enters the chip through the inner lead, the interface between the wire and the resin, and corrodes the Af electrode or AA wiring part on the chip, the wire has a low moisture absorption rate. It is an object of the present invention to provide a resin-sealed semiconductor device coated with a low-temperature substance and having excellent moisture resistance, and a method for manufacturing the same.

（課題を解決するための手段） 本発明は、上記目的を達成するために、リードフレーム
のアイランド部に半導体装ノブをダイスボンドし、該半
導体チップ上の電極と前記リードフレームのインナリー
ド部をワイヤボンドしたものを樹脂封止してなる半導体
装置において、吸湿性の低い物質を塗布するボンディン
グワイヤを用い、水分の浸入経路を断つようにしたもの
である。(Means for Solving the Problems) In order to achieve the above object, the present invention dice-bonds a semiconductor device knob to an island portion of a lead frame, and connects an electrode on the semiconductor chip to an inner lead portion of the lead frame. In a semiconductor device formed by wire-bonding and resin-sealing, a bonding wire coated with a substance with low hygroscopicity is used to cut off the path of moisture infiltration.

また、リードフレームのアイランド部に半導体チップを
ダイスボンドし、該半導体チップ上の電極と前記リード
フレームのインナリード部をワイヤボンドしたものを樹
脂封止してなる半導体装置の製造方法において、キャピ
ラリの周りに供給される吸湿性の低い物質のカバーを閉
じて、半導体チップの電極上にワイヤボンディングを行
う工程と、該ワイヤボンディング直後、前記カバーを開
いて、ワイヤに吸湿性の低い物質を塗布しながらワイヤ
を引き出し、前記キャピラリをインナリードに移動させ
る工程と、該インナリードに前記キャピラリが至ると前
記カバーを閉じて、該インナリードにワイヤボンディン
グを行う工程とを施すようにしたものである。Further, in a method of manufacturing a semiconductor device, a semiconductor chip is dice-bonded to an island portion of a lead frame, and an electrode on the semiconductor chip and an inner lead portion of the lead frame are wire-bonded and sealed with a resin. A step of performing wire bonding on the electrode of the semiconductor chip by closing a cover of a material with low hygroscopicity supplied around the wire, and immediately after the wire bonding, opening the cover and applying a material with low hygroscopicity to the wire. The capillary is moved to the inner lead while pulling out the wire, and when the capillary reaches the inner lead, the cover is closed and wire bonding is performed to the inner lead.

（作用） 本発明によれば、上記のように、リードフレームのアイ
ランド部に半導体チップをダイスボンドし、該半導体チ
ップ上の電極とリードフレームのインナリード部をワイ
ヤボンドしたものを樹脂封止してなる半導体装置におい
て、ボンディングワイヤに吸湿率の低い物質を塗布する
ことにより、ボンディングワイヤと樹脂の界面の水分の
浸入経路を断ち、半導体チップ上のＡｌ電極及びＡｌ配
線が腐食するのを防ぐことができる。(Function) According to the present invention, as described above, a semiconductor chip is die-bonded to the island portion of a lead frame, and the electrodes on the semiconductor chip and the inner lead portion of the lead frame are wire-bonded and then sealed with resin. To prevent corrosion of Al electrodes and Al wiring on a semiconductor chip by coating the bonding wire with a substance with low moisture absorption to cut off the path of moisture infiltration at the interface between the bonding wire and the resin. I can do it.

また、そのボンディングワイヤへの吸湿率の低い物質の
塗布は、ワイヤボンディング工程と並行して自動的に実
施することができ、作業効率の向上を図ることができる
。Moreover, the application of a substance with low moisture absorption rate to the bonding wire can be automatically performed in parallel with the wire bonding process, thereby improving work efficiency.

（実施例） 以下、本発明の実施例について図面を参照しながら詳細
に説明する。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.

第１図は本発明の実施例を示す樹脂封止型半導体装置の
断面図である。FIG. 1 is a sectional view of a resin-sealed semiconductor device showing an embodiment of the present invention.

この実施例においては、この図に示すように、ボンディ
ングワイヤ６には吸湿率の低い物［１８、例えばシリカ
を高充填したエポキシ樹脂が塗布されているものを用い
ている。なお、従来のものと同じ部分については、同一
番号を付し、その説明は省略する。In this embodiment, as shown in this figure, the bonding wire 6 is made of a material [18] having a low moisture absorption rate, such as one coated with an epoxy resin highly filled with silica. Note that the same parts as in the conventional one are given the same numbers, and the explanation thereof will be omitted.

第２図は本発明の実施例を示す樹脂封止型半導体装置の
製造工程で用いるワイヤボンディング装置の構成図であ
る。FIG. 2 is a configuration diagram of a wire bonding apparatus used in the manufacturing process of a resin-sealed semiconductor device according to an embodiment of the present invention.

この図において、２１はＡｕワイヤ、２２はキャピラリ
、２３はＡｕボール、２４は第１のカバー、２５は第２
のカバー、２６は吸湿性の低い物質、２７はシリコンチ
ップ、２８は／ｌ電極である。In this figure, 21 is an Au wire, 22 is a capillary, 23 is an Au ball, 24 is a first cover, and 25 is a second
26 is a material with low hygroscopicity, 27 is a silicon chip, and 28 is a /l electrode.

そこで・、まず、第２図（ａ）に示すように、キャピラ
リ２２に第１のカバー２４と第２のカバー２５からなる
二重のカバーを設け、吸湿性の低い物質２６、例えばシ
リカを高充填したエポキシ樹脂を供給する。ここで、ノ
ズル状の開口を有する第２のカバー２５は絶えず固定さ
れているが、第１のカバー２４は可動である。Therefore, first, as shown in FIG. 2(a), a double cover consisting of a first cover 24 and a second cover 25 is provided on the capillary 22, and a substance 26 with low hygroscopicity, such as silica, is Supply filled epoxy resin. Here, the second cover 25 with the nozzle-shaped opening is permanently fixed, while the first cover 24 is movable.

そこで、第１のカバー２４は閉じた状態で、Ａｕワイヤ
２１はキャピラリ２２を通して供給され、水素炎または
電気放電によってＡｕワイヤ２１の先端を溶融させ、線
径の約２倍の大きさのＡｕボール２３を形成させる。Therefore, while the first cover 24 is closed, the Au wire 21 is supplied through the capillary 22, and the tip of the Au wire 21 is melted by hydrogen flame or electric discharge to form an Au ball with a size approximately twice the wire diameter. 23 is formed.

次いで、キャピラリ２２を腎下し、シリコンチップ２７
上のＡ　１　ｉＪ極２８上に所定の加圧と時間をかけ、
Ａｕボール２３を熱圧着させた直後、第２図（ｂ）に示
すように、第１のカバー２４を動作させて、下端部を引
き上げて、ノズルを開口し、これにより、Ａｕワイヤ２
１の周りに吸湿性の低い物質２６を塗布することにかで
きる。Next, the capillary 22 is inserted into the kidney, and the silicon chip 27 is
Applying a predetermined amount of pressure and time to the upper A 1 iJ pole 28,
Immediately after thermocompression-bonding the Au ball 23, as shown in FIG. 2(b), the first cover 24 is operated and the lower end is pulled up to open the nozzle.
Alternatively, a material 26 with low hygroscopicity may be applied around the material 1 .

第３図は第２図に示したワイヤボンディング装置を用い
たワイヤボンディング工程断面図である。FIG. 3 is a sectional view of a wire bonding process using the wire bonding apparatus shown in FIG.

まず、第３図（ａ）に示すように、第１のカバー２４は
閉じた状態で、Ａｕワイヤ２１はキャピラリ２２を通し
て供給され、水素炎または電気放電によってＡｕワイヤ
２１の先端を溶融させ、線径の約２倍の大きさのＡｕボ
ール２３を形成する。First, as shown in FIG. 3(a), with the first cover 24 closed, the Au wire 21 is supplied through the capillary 22, the tip of the Au wire 21 is melted by hydrogen flame or electric discharge, and the wire is An Au ball 23 having a size approximately twice the diameter is formed.

次に、第３図（ｂ）に示すように、キャピラリ２２を降
下し、シリコンチップ２７上のＡｆｆｉ電極２８上に所
定の加圧と時間をかけＡｕボール２３を熱圧着させた直
後、第１のカバー２４を動作させ、下端部を引き上げて
、ノズルを開口し、これにより、Ａｕワイヤ２１の周り
に吸湿性の低い物質２６を塗布する。Next, as shown in FIG. 3(b), immediately after the capillary 22 is lowered and the Au ball 23 is thermocompression bonded onto the Affi electrode 28 on the silicon chip 27 by applying a predetermined pressure and time, the first The cover 24 is operated and the lower end is pulled up to open the nozzle, thereby coating the low hygroscopic substance 26 around the Au wire 21.

そこで、第３図（ｃ）に示すように、第１のカバー２４
は開いたままで、Ａｕワイヤ２１をキャピラリ２２をか
ら引き出しながらインナリード２９へと移動し、Ａｕワ
イヤ２１の周りに吸湿性の低い物質２６を塗布していく
。Therefore, as shown in FIG. 3(c), the first cover 24
While keeping the Au wire 21 open, the Au wire 21 is pulled out from the capillary 22 and moved to the inner lead 29, and a substance 26 with low hygroscopicity is applied around the Au wire 21.

次に、キャピラリ２２の先端部がインナリード２９へ到
ると、第３図（ｄ）に示すように、第１のカバー２４を
閉じて、Ａｊ２電極２８とインナリード２９間で導通が
とれるようにＡｕワイヤ２１をインナリード２９上で熱
圧着し、この部分でＡｕワイヤ２１をクランプ（図示な
し）で固定し、キャピラリ２２がインナリード２９と離
れると同時に、Ａｕワイヤ２１が切れるようにする。Next, when the tip of the capillary 22 reaches the inner lead 29, the first cover 24 is closed to establish electrical continuity between the Aj2 electrode 28 and the inner lead 29, as shown in FIG. 3(d). The Au wire 21 is thermocompressed onto the inner lead 29, and the Au wire 21 is fixed at this portion with a clamp (not shown) so that the Au wire 21 is cut at the same time as the capillary 22 separates from the inner lead 29.

このように、Ａｕワイヤ２Ｂ：Ａｊ２電極２８の導通を
損なうことなく、Ａｕワイヤ２１０周りに吸湿性の低い
物質２６を塗布することができる。In this way, the substance 26 with low hygroscopicity can be applied around the Au wire 210 without impairing the conductivity of the Au wire 2B:Aj2 electrode 28.

更に、インナリード２９にＡｕワイヤ２１を熱圧着させ
る際は、第３図（ｄ）に示したように、第１のカバー２
４を閉し、吸湿性の低い物質２６がＡｕワイヤ２１にか
からないようにして、Ａｕワイヤ２１とインナリード２
９間の導通が損なわれることがないようにしている。Furthermore, when bonding the Au wire 21 to the inner lead 29 by thermocompression, as shown in FIG. 3(d), the first cover 2
4 to prevent the substance 26 with low hygroscopicity from getting on the Au wire 21, and connect the Au wire 21 and the inner lead 2.
This prevents the continuity between the terminals 9 and 9 from being impaired.

なお、第３図においては、説明の都合上、第２のカバー
２５は省略している。In addition, in FIG. 3, the second cover 25 is omitted for convenience of explanation.

また、そのボンディングワイヤへの吸湿率の低い物質の
塗布は、ワイヤボンディング工程と並行して自動的に実
施することができる。即ち、従来のワイヤボンディング
工程に、吸湿性の低い物質の供給停止を行う第１のカバ
ーの開閉制御を付加するプログラムをコントローラ（図
示なし）に記憶させ、自動化を回ることができる。Further, the application of a substance with a low moisture absorption rate to the bonding wire can be automatically performed in parallel with the wire bonding process. That is, automation can be achieved by storing a program in a controller (not shown) that adds opening/closing control of the first cover for stopping the supply of a substance with low hygroscopicity to the conventional wire bonding process.

なお、本発明は上記実施例に限定されるものではなく、
本発明の趣旨に基づいて種々の変形が可能であり、これ
らを本発明の範囲から排除するものではない。Note that the present invention is not limited to the above embodiments,
Various modifications are possible based on the spirit of the present invention, and these are not excluded from the scope of the present invention.

（発明の効果） 以上、詳細に説明したように、本発明によれば、ボンデ
ィングワイヤ部分に吸湿性の低い物質、例えば、シリカ
を高充填したエポキシ樹脂を塗布するようにしたので、
ワイヤと封止樹脂の界面を伝わって水分が浸入するのを
防止することができ、耐湿性の向上を図ることができる
。(Effects of the Invention) As described in detail above, according to the present invention, since the bonding wire portion is coated with a substance with low hygroscopicity, for example, an epoxy resin highly filled with silica,
It is possible to prevent moisture from entering through the interface between the wire and the sealing resin, and it is possible to improve moisture resistance.

また、そのボンディングワイヤへの吸湿率の低い物質の
塗布は、ワイヤボンディング工程と並行して自動的に実
施することができ、作業効率の向上を図ることができる
。Moreover, the application of a substance with low moisture absorption rate to the bonding wire can be automatically performed in parallel with the wire bonding process, thereby improving work efficiency.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の実施例を示す樹脂封止型半導体装置の
断面図、第２図は本発明の実施例を示す樹脂封止型半導
体装置の製造工程で用いるワイヤボンディング装置の構
成図、第３図は第２図に示したワイヤボンディング装置
を用いたワイヤボンディング工程断面図、第４図は従来
の樹脂封止半導体装置の断面図、第５図は従来の樹脂封
止半導体装置のワイヤボンディング工程図である。 １８、２６・・・吸湿性の低い物質（シリカを高充填し
たエポキシ樹脂）、２１・・・Ａｕワイヤ、２２・・・
キャピラリ、２３・・・Ａｕボール、２４・・・第１の
カバー、２５・・・第２のカバー、２７・・・シリコン
チップ、２８・・・Ａｌ電極、２９・・・インナリード
。 特許出願人　沖電気工業株式会社 代理人　弁理士　　清　水　　守（外１名）第１図 Δ（を日８ｎＭｕｆｉｖ用いうワイヤボ５テｑンブ社の
１琴Ｆ芝５ζ′第２図FIG. 1 is a cross-sectional view of a resin-sealed semiconductor device showing an embodiment of the present invention, and FIG. 2 is a configuration diagram of a wire bonding device used in the manufacturing process of a resin-sealed semiconductor device showing an embodiment of the present invention. Fig. 3 is a cross-sectional view of a wire bonding process using the wire bonding equipment shown in Fig. 2, Fig. 4 is a cross-sectional view of a conventional resin-sealed semiconductor device, and Fig. 5 is a wire bonding process of a conventional resin-sealed semiconductor device. It is a bonding process diagram. 18, 26... Substance with low hygroscopicity (epoxy resin highly filled with silica), 21... Au wire, 22...
Capillary, 23...Au ball, 24...first cover, 25...second cover, 27...silicon chip, 28...Al electrode, 29...inner lead. Patent Applicant Oki Electric Industry Co., Ltd. Agent Patent Attorney Mamoru Shimizu (and 1 other person)

Claims (2)

【特許請求の範囲】[Claims] （１）リードフレームのアイランド部に半導体チップを
ダイスボンドし、該半導体チップ上の電極と前記リード
フレームのインナリード部をワイヤボンドしたものを樹
脂封止してなる半導体装置において、 吸湿性の低い物質を塗布するボンディングワイヤを用い
、水分の浸入経路を断つことを特徴とする樹脂封止型半
導体装置。(1) A semiconductor device in which a semiconductor chip is dice-bonded to an island portion of a lead frame, and an electrode on the semiconductor chip and an inner lead portion of the lead frame are wire-bonded and sealed with a resin, which has low hygroscopicity. A resin-sealed semiconductor device characterized by using a bonding wire to apply a substance to cut off a path for moisture to infiltrate. （２）リードフレームのアイランド部に半導体チップを
ダイスボンドし、該半導体チップ上の電極と前記リード
フレームのインナリード部をワイヤボンドしたものを樹
脂封止してなる半導体装置の製造方法において、 （ａ）キャピラリの周りに供給される吸湿性の低い物質
のカバーを閉じて、半導体チップの電極上にワイヤボン
ディングを行う工程と、 （ｂ）該ワイヤボンディング直後、前記カバーを開いて
、ワイヤに吸湿性の低い物質を塗布しながらワイヤを引
き出し、前記キャピラリをインナリードに移動させる工
程と、 （ｃ）該インナリードに前記キャピラリが至ると前記カ
バーを閉じて、該インナリードにワイヤボンディングを
行う工程とを施すことを特徴とする樹脂封止型半導体装
置の製造方法。(2) A method for manufacturing a semiconductor device in which a semiconductor chip is dice-bonded to an island portion of a lead frame, and an electrode on the semiconductor chip and an inner lead portion of the lead frame are wire-bonded and sealed with a resin. a) closing a cover of a material with low hygroscopicity supplied around the capillary and performing wire bonding on the electrode of the semiconductor chip; (b) immediately after the wire bonding, opening the cover and allowing the wire to absorb moisture; (c) When the capillary reaches the inner lead, the cover is closed and wire bonding is performed to the inner lead. A method for manufacturing a resin-sealed semiconductor device, characterized by performing the following steps.
JP2177590A 1990-07-06 1990-07-06 Resin-sealed semiconductor device and its manufacture Pending JPH0465840A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2177590A JPH0465840A (en) 1990-07-06 1990-07-06 Resin-sealed semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2177590A JPH0465840A (en) 1990-07-06 1990-07-06 Resin-sealed semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPH0465840A true JPH0465840A (en) 1992-03-02

Family

ID=16033653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2177590A Pending JPH0465840A (en) 1990-07-06 1990-07-06 Resin-sealed semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPH0465840A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5950100A (en) * 1995-05-31 1999-09-07 Nec Corporation Method of manufacturing semiconductor device and apparatus for the same
US6150186A (en) * 1995-05-26 2000-11-21 Formfactor, Inc. Method of making a product with improved material properties by moderate heat-treatment of a metal incorporating a dilute additive
WO2007107964A1 (en) * 2006-03-23 2007-09-27 Nxp B.V. Electrically enhanced wirebond package
KR100878918B1 (en) * 2007-01-17 2009-01-15 삼성전기주식회사 Wire bonding apparatus and method
JP6258538B1 (en) * 2017-03-14 2018-01-10 有限会社 ナプラ Semiconductor device and manufacturing method thereof

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6150186A (en) * 1995-05-26 2000-11-21 Formfactor, Inc. Method of making a product with improved material properties by moderate heat-treatment of a metal incorporating a dilute additive
US5950100A (en) * 1995-05-31 1999-09-07 Nec Corporation Method of manufacturing semiconductor device and apparatus for the same
WO2007107964A1 (en) * 2006-03-23 2007-09-27 Nxp B.V. Electrically enhanced wirebond package
US8203219B2 (en) 2006-03-23 2012-06-19 Taiwan Semiconductor Manufacturing Company, Ltd. Electrically enhanced wirebond package
KR100878918B1 (en) * 2007-01-17 2009-01-15 삼성전기주식회사 Wire bonding apparatus and method
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