JPH0464201A - Ceramic resistor - Google Patents
Ceramic resistorInfo
- Publication number
- JPH0464201A JPH0464201A JP2175221A JP17522190A JPH0464201A JP H0464201 A JPH0464201 A JP H0464201A JP 2175221 A JP2175221 A JP 2175221A JP 17522190 A JP17522190 A JP 17522190A JP H0464201 A JPH0464201 A JP H0464201A
- Authority
- JP
- Japan
- Prior art keywords
- zno
- oxide
- terms
- resistance
- frit glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000011787 zinc oxide Substances 0.000 claims abstract description 21
- 239000011521 glass Substances 0.000 claims abstract description 18
- 239000000395 magnesium oxide Substances 0.000 claims abstract description 12
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims abstract description 12
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 6
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims abstract description 5
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 2
- 239000004327 boric acid Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 5
- 239000007791 liquid phase Substances 0.000 abstract description 2
- 238000005245 sintering Methods 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- 239000006185 dispersion Substances 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 abstract 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 abstract 1
- 229910010293 ceramic material Inorganic materials 0.000 abstract 1
- 229910001676 gahnite Inorganic materials 0.000 abstract 1
- 238000010304 firing Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- WYCGHEIAXKPOKM-UHFFFAOYSA-N [O-2].[Zn+2].[O-2].[Mg+2].[O-2].[Al+3] Chemical compound [O-2].[Zn+2].[O-2].[Mg+2].[O-2].[Al+3] WYCGHEIAXKPOKM-UHFFFAOYSA-N 0.000 description 2
- 235000013339 cereals Nutrition 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は遮断器、変圧器等電力機器に好適なセラミック
抵抗体に関する６
〔従来の技術〕
従来、電力用直線抵抗体には炭素系及び酸化亜鉛系セラ
ミック抵抗体が用いられてきた。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a ceramic resistor suitable for power equipment such as circuit breakers and transformers. Zinc oxide based ceramic resistors have been used.
炭素系抵抗体は酸化アルミニウム結晶中で炭素粉を分散
させたもので、数百Ω１の抵抗率を持ち。Carbon-based resistors are made by dispersing carbon powder in aluminum oxide crystals, and have a resistivity of several hundred ohms.
遮断器、変圧器等に適用されている。しかし、この抵抗
体は緻密性が劣り、放電サージ吸収時に炭素粉間で放電
を起こすために耐量が小さい欠点がある。Applied to circuit breakers, transformers, etc. However, this resistor has the drawback of poor density and low resistance because discharge occurs between the carbon powder when absorbing a discharge surge.
一方、酸化豆粉系抵抗体、特に、酸化アルミニウムと酸
化マグネシウムとを含む抵抗体は特願昭６２−６５６１
１号明細書に記載したように抵抗率１０−１０００Ωｌ
、放電サージ耐量１０００Ｊ／ａ＋ｆ以上で正の抵抗温
度係数をもち、特性は良好である。この抵抗体は通常の
セラミック焼成技術、即ち、酸化亜鈴その他の原料粉を
混合機造粒し、成形、焼成、電極相の各工程を経て作製
される。抵抗値のばらつきは±１０〜２０％で、変圧器
用抵抗体の場合±１５％以内が要求される。On the other hand, a resistor based on oxidized bean flour, especially a resistor containing aluminum oxide and magnesium oxide, is disclosed in Japanese Patent Application No. 62-6561.
Resistivity 10-1000Ωl as described in Specification No. 1
, it has a positive temperature coefficient of resistance at a discharge surge resistance of 1000 J/a+f or more, and has good characteristics. This resistor is manufactured using the usual ceramic firing technique, that is, by granulating raw material powder such as tin oxide in a mixer, and going through the steps of molding, firing, and electrode phase. The variation in resistance value is ±10 to 20%, and in the case of a resistor for a transformer, within ±15% is required.
上記酸化亜鉛系抵抗体に関する従来技術は焼成工程が難
かしく、抵抗値がばらつく問題があった。The conventional technology related to the above-mentioned zinc oxide-based resistor has a problem in that the firing process is difficult and the resistance value varies.
本発明の目的は焼成工程を改善することにあり。The purpose of the present invention is to improve the firing process.
さらに、抵抗値のそろった酸化亜鉛−酸化アルミニウム
ー酸化マグネシウム系抵抗体を提供することにある。Another object of the present invention is to provide a zinc oxide-aluminum oxide-magnesium oxide resistor having uniform resistance values.
上記目的は酸化亜鉛−酸化アルミニウムー酸化マグネシ
ウム抵抗体にフリットガラスを添加することにより達成
される。The above object is achieved by adding frit glass to the zinc oxide-aluminum oxide-magnesium oxide resistor.
また、目標抵抗率を得るために９００〜１３００℃間の
温度で焼成したものである。Further, in order to obtain the target resistivity, it was fired at a temperature between 900 and 1300°C.
本発明者等は酸化亜鉛系抵抗体にほう珪酸系ガラスを少
量添加すると焼成温度が低下し、多数焼成した場合の抵
抗値のばらつきが低減することを見出した。The present inventors have discovered that when a small amount of borosilicate glass is added to a zinc oxide resistor, the firing temperature is lowered and the variation in resistance value when a large number of resistors are fired is reduced.
酸化アルミニウムはＡＱｚＯａに換算して０．５〜４０
＋ｓｏＲ％が適量である。酸化マグネシウムはＭｇＯに
換算して０．５〜４０■ｏＱ％が適量である。酸化亜鉛
はＺｎＯに換算して２０〜９９１ＩＯＱ％が適量である
。Aluminum oxide is 0.5 to 40 in terms of AQzOa
+soR% is an appropriate amount. The appropriate amount of magnesium oxide is 0.5 to 40 oQ% in terms of MgO. The appropriate amount of zinc oxide is 20 to 991 IOQ% in terms of ZnO.
フリットガラスは０．０１〜２．Ｏｗ ｔ％が適量であ
る。これ以下では抵抗値のばらつきが低減せず、一方２
．Ｏｗ ｔ％以上では抵抗値が低下してしまう。因に、
ｗｔ％で表示したのは市販のフリットガラスの分子量が
判明せず、ｍＯＱ比で表示できないためである。フリッ
トガラスにはほう酸系（ＢｚＯｓ）、珪酸系（Ｓ ｉ
０２）、はう珪酸系（Ｓ ｉ ０２−ＢｚＯｓ）等が用
いられる。これらのガラスは、適宜に２０．ＺｎＯ，Ｃ
ａｂ、Ａ（ｌｚｏｓ、Ｐｂｏ等が添加されたものを用い
ても本発明の特性を損うものではない。また、二種以上
のガラスを添加可能である。Frit glass is 0.01~2. Owt% is an appropriate amount. Below this value, the variation in resistance value will not be reduced; on the other hand, 2
．． If it exceeds Owt%, the resistance value will decrease. Incidentally,
The reason why it is expressed in wt% is because the molecular weight of commercially available frit glasses is unknown and cannot be expressed in terms of mOQ ratio. Frit glass is made of boric acid (BzOs) or silicic acid (Si).
02), silicic acid type (S i 02-BzOs), etc. are used. These glasses are suitably made of 20. ZnO,C
Even if a glass containing ab, A(lzos, Pbo, etc.) is used, the characteristics of the present invention will not be impaired.Furthermore, two or more kinds of glasses can be added.
焼成温度は９００〜１３００℃間が適当である。The firing temperature is suitably between 900 and 1300°C.
これ以下では抵抗が高すぎ５一方、１３００℃以上では
収縮率が上らない。Below this, the resistance is too high5, while above 1300°C the shrinkage rate does not increase.
抵抗率は１０〜１０００Ω■が適量である。このような
材料を加工し、おおよそ直径３ｏ〜１５０圓、厚さ１０
〜５０ｍ範囲の円筒形素子が作製される。A suitable resistivity is 10 to 1000 Ω. By processing such materials, the diameter is approximately 3 to 150 mm, and the thickness is 10 mm.
Cylindrical elements in the ˜50 m range are fabricated.
Ａ Ｄ ｘｏａはＺｎＯと反応してＺ ｎ Ａ Ｑ ｘ
ｏａからなる複酸化物結晶粒を形成し、電気抵抗を高め
る。A D xoa reacts with ZnO to form Z n A Q x
Forms multiple oxide crystal grains consisting of OA and increases electrical resistance.
ＭｇＯは電気抵抗を高め、かつ、抵抗の温度係数を低減
乃至正に転化させる。ＺｎＯは主成分であり、主として
導電部を形成する。MgO increases the electrical resistance and reduces the temperature coefficient of resistance to a positive value. ZnO is the main component and mainly forms the conductive part.
フリットガラスは焼成中に液相を形成し、焼結を促進す
る。このため、焼成温度が低減する。本発明抵抗体の微
構造をａｍした結果では、ＺｎＯ結晶粒の大きさがそろ
い、抵抗値のばらつき低減に寄与している。The frit glass forms a liquid phase during firing, promoting sintering. Therefore, the firing temperature is reduced. The results of microstructure analysis of the resistor of the present invention show that the ZnO crystal grains have uniform sizes, which contributes to reducing variations in resistance value.
以下、本発明の一実施例を説明する。 An embodiment of the present invention will be described below.
〈実施例１〉
ＺｎＯ： ３５０２ｇ（４３，０ｎｏｆｆ）、ＡＱｚＯ
ａ： ３５７ｇ（３，５ｍｏｌ）、ＭｇＯ： １４１ｇ
（３，５■ｏＱ）、及び、はう酸亜鉛フリットガラス：
２０ｇ（０，５ｗｔ％）をボールミルで混合した。<Example 1> ZnO: 3502g (43,0noff), AQzO
a: 357g (3.5mol), MgO: 141g
(3,5■oQ) and zinc oxide frit glass:
20g (0.5wt%) were mixed in a ball mill.
これにバインダを加え、スプレードライヤで造粒した。A binder was added to this, and it was granulated using a spray dryer.
これを直径５ｏ閣、厚さ１５ｍに成形した。This was molded to a diameter of 5 mm and a thickness of 15 m.
この成形体は電気炉に入れ、温度をかえて各２ｈ焼成し
た。最後に、焼結体両面にアルミニウムを溶射し、電極
にした。特性比較のため、フリットガラスを添加しない
抵抗体も作製した。This molded body was placed in an electric furnace and fired for 2 hours at different temperatures. Finally, aluminum was thermally sprayed on both sides of the sintered body to form electrodes. For comparison of characteristics, a resistor without frit glass was also fabricated.
第１図は焼成温度による抵抗率ρの変化を示す。FIG. 1 shows the change in resistivity ρ depending on the firing temperature.
曲線１は０．５ｗｔ％ フリットガラス添加した酸化亜
鉛系抵抗体、一方向縁２は従来のフリットガラスを添加
しない酸化亜鉛系抵抗体の場合である。Curve 1 is for a zinc oxide resistor to which 0.5 wt% frit glass is added, and curve 2 is for a conventional zinc oxide resistor to which no frit glass is added.
曲線１は曲＃！２よりも焼成温度が低く、かつ、１０３
Ω口以下で、焼成温度による抵抗の変化率が小さいこと
がわかる。Curve 1 is song #! The firing temperature is lower than 2, and 103
It can be seen that the rate of change in resistance due to firing temperature is small below Ω.
〈実施例２〉
実施例１と同様な組成及び工程で、各二十個の抵抗体を
作製した。この場合、本発明品は１０９０’Ｃ２従来品
は１２８０℃の温度で焼成した。従来品は１７個４００
〜５００Ω■間の抵抗率を示し、二個６００Ωｌ、−個
３５００ａｍで、三個不合格品が出たのに対し、本発明
は二十個全て４００〜５００Ω１間の抵抗率を示した。<Example 2> Twenty resistors were manufactured using the same composition and process as in Example 1. In this case, the product of the present invention was fired at a temperature of 1090'C2 and the conventional product was fired at a temperature of 1280°C. Conventional product: 17 pieces 400
The resistivity of the present invention was between 400 and 500 Ω1, whereas 2 of them were 600 Ωl and 3 of them were 3500 am, and 3 were rejected.
〈実施例３〉
組成及び焼成温度をかえ、実施例１と同様にして、各条
件二十個ずつの抵抗体を作製し、抵抗値のばらつきを求
めた。八２２０３及びＭｇＯ量は百分率で表わした。個
数は４００〜５００Ω■間の抵抗率を示す抵抗体の数量
とした。０．０１〜２ 、Ｏｗ ｔ％のガラス量では１
８〜２０個の合格品が得られ、ガラス添加しない１６個
と比べて明らかに増大した。第１表には成分量をかえた
場合の目標抵抗率範囲に入った抵抗体の個数を示す。<Example 3> Twenty resistors were produced for each condition in the same manner as in Example 1, except that the composition and firing temperature were changed, and variations in resistance values were determined. The amounts of 82203 and MgO were expressed as percentages. The number of resistors was determined to be the number of resistors exhibiting a resistivity between 400 and 500 Ω. 0.01~2, 1 for Ow t% glass amount
8 to 20 acceptable products were obtained, which was clearly increased compared to 16 products without glass addition. Table 1 shows the number of resistors that fell within the target resistivity range when the component amounts were changed.
第 １ 表
三個４ｏＯ〜５０ｏΩｌ、−個４００Ｑ（！ｍ、六個５
００Ｑａ１１以上であった。Table 1 Three pieces 4oO~50oΩl, - pieces 400Q (!m, six pieces 5
00Qa11 or higher.
本発明によれば、焼成温度を下げ、かつ、焼成温度によ
る抵抗率変化を軽減できるので、抵抗値のばらつきを低
減することができる。According to the present invention, it is possible to lower the firing temperature and reduce the change in resistivity due to the firing temperature, so it is possible to reduce variations in resistance value.
第１図は本発明における焼成温度と抵抗率との関係の説
明図である。FIG. 1 is an explanatory diagram of the relationship between firing temperature and resistivity in the present invention.
Claims (1)
＿２Ｏ＿３に換算して０．５〜４０ｍｏｌ％，酸化マグ
ネシウムがＭｇＯに換算して０．５〜４０ｍｏｌ％から
なり、かつ一種以上のほう酸系、けい酸系及びほうけい
酸系フリツトガラスを０．０１〜２．０ｗｔ％を含むこ
とを特徴とするセラミツク抵抗体。1. Zinc oxide is the main component, aluminum oxide is Al
It consists of 0.5 to 40 mol% in terms of _2O_3, 0.5 to 40 mol% of magnesium oxide in terms of MgO, and 0.01 to 40 mol% of one or more boric acid-based, silicic acid-based, and borosilicate-based frit glasses. A ceramic resistor characterized by containing 2.0 wt%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2175221A JPH0464201A (en) | 1990-07-04 | 1990-07-04 | Ceramic resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2175221A JPH0464201A (en) | 1990-07-04 | 1990-07-04 | Ceramic resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0464201A true JPH0464201A (en) | 1992-02-28 |
Family
ID=15992409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2175221A Pending JPH0464201A (en) | 1990-07-04 | 1990-07-04 | Ceramic resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0464201A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5764129A (en) * | 1995-03-27 | 1998-06-09 | Hitachi, Ltd. | Ceramic resistor, production method thereof, neutral grounding resistor and circuit breaker |
| CN114477994A (en) * | 2022-01-25 | 2022-05-13 | 广东爱晟电子科技有限公司 | High-power ceramic chip resistor and material and preparation thereof |
-
1990
- 1990-07-04 JP JP2175221A patent/JPH0464201A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5764129A (en) * | 1995-03-27 | 1998-06-09 | Hitachi, Ltd. | Ceramic resistor, production method thereof, neutral grounding resistor and circuit breaker |
| CN114477994A (en) * | 2022-01-25 | 2022-05-13 | 广东爱晟电子科技有限公司 | High-power ceramic chip resistor and material and preparation thereof |
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