JPH0462579B2 - - Google Patents

Info

Publication number
JPH0462579B2
JPH0462579B2 JP59209221A JP20922184A JPH0462579B2 JP H0462579 B2 JPH0462579 B2 JP H0462579B2 JP 59209221 A JP59209221 A JP 59209221A JP 20922184 A JP20922184 A JP 20922184A JP H0462579 B2 JPH0462579 B2 JP H0462579B2
Authority
JP
Japan
Prior art keywords
surface protective
photoreceptor
protective layer
contact angle
moisture resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59209221A
Other languages
Japanese (ja)
Other versions
JPS6187159A (en
Inventor
Koichi Aizawa
Eizo Tanabe
Kenichi Hara
Toyoki Kazama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP20922184A priority Critical patent/JPS6187159A/en
Publication of JPS6187159A publication Critical patent/JPS6187159A/en
Publication of JPH0462579B2 publication Critical patent/JPH0462579B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic

Description

【発明の詳細な説明】[Detailed description of the invention] 【発明の属する技術分野】[Technical field to which the invention pertains]

本発明はアモルフアスシリコンからなる光導電
層を有する電子写真用感光体に関する。
The present invention relates to an electrophotographic photoreceptor having a photoconductive layer made of amorphous silicon.

【従来技術とその問題点】[Prior art and its problems]

従来、電子写真感光体として例えばアモルフア
スSe、またはアモルフアスSeにAs,Te,Sb等の
不純物をドープした感光体、あるいはZnOやCdS
を樹脂バインダーに分散させた感光体等が使用さ
れている。しかしながらこれらの感光体は環境汚
染性熱的安定性、機械的強度の点で問題がある。
これらの問題を解決するために近年、光導電層と
してアモルフアスシリコン(以下a−Siと記す)
を用いることが提案されている。しかし、蒸着あ
るいはスパツタリングによつて作成されたa−Si
は暗所での比抵抗が105Ωcmと低く、また光電導
度が極めて小さいので電子写真感光体としては望
ましくない。このようなa−SiではSi−Si結合が
切れた、いわゆるダングリングボンドが生成さ
れ、この欠陥に起因してエネルギーギヤツプ内に
多くの局在準位が存在する。このために熱励起担
体のホツピング伝導が生じて暗比抵抗が小さくな
り、また光励起担体が局在準位に捕獲されるため
に光導電性が悪くなつている。これに対してシラ
ンガス(SiH4)のグロー放電分解によつて作成
したアモルフアス水素化シリコン(a−Si:H)
では上記欠陥を水素原子(H)で捕獲し、SiにHを結
合させることによつてダングリングボンドの数を
大幅に低減できるので光導電性が極めて良好にな
り、p型及びn型の価電子制御も可能となつた
が、暗比抵抗値は高々108〜109Ωcmであつて電子
写真感光体として十分な1012Ωcm以上の比抵抗値
に対して未だ低い。従つてこのようなa−Si:H
からなる感光体は表面電位の暗減衰速度が大きく
初期帯電位が低い。そこでこのようなa−Si:H
に電荷保持能を付与するため、硼素を適量ドープ
することにより比抵抗を1012Ωcm以上まで高める
ことができ、カールソン方式による複写プロセス
に適用することを可能としている。 このようなa−Si:Hを表面とする感光体は初
期的には良好な画像が得られるものの、長期間大
気中あるいは高湿中に保存しておいた後画像評価
した場合しばしば画像不良を発生することが判明
している。また、多数回複写プロセスを繰り返す
としだいに画像ぼけを生じてくることもわかつて
いる。このような劣化した感光体は、特に高湿中
において画像ぼけを発生しやすく、複写回数が増
すと画像ぼけを生じ始める臨界湿度はしだいに下
がる傾向があることが確かめられている。このよ
うな画像ぼけを調べるには、実際の複写機等で数
万枚のコピーを繰り返して画像を目視により検査
いなければならず、莫大な労力を必要とする。 上述のごとく、a−Si:感光体は長期にわたつ
て大気や湿気にさらされることにより、あるいは
複写プロセスにおけるコロナ放電等で生成される
化学種(オゾン,窒素酸化物,発生期酸素など)
により感光体最表面が影響を受けやすく、何らか
の化学的な変質によつて画像不良を発生するもの
と考えられている。その劣化メカニズムについて
はこれまでにまだ十分な検討はなされていない
が、このような画像不良の発生を防止し耐刷性を
向上するために、a−Si:H感光体の表面に保護
層を設けて化学的安定化を図る方法が試みられて
いる。例えば表面保護層としてアモルフアス炭化
水素シリコン(a−SixC1x:H,0<x<1)あ
るいはアモルフアス窒化水素化シリコン(a−
SixN1-x:H,0<x<1)を設けることによつ
て感光体表面層の複写プロセスあるいは環境雰囲
気により劣化を防ぐ方法が知られている。たしか
に表面保護層中の炭素濃度あるいは窒素濃度を最
適な値に選べば耐刷性をかなり改良することがで
きるが、高湿度雰囲気中での耐湿性を維持するこ
とができず、数万枚の複写プロセスを経験すると
相対湿度60%台で画像ぼけを発生し、これらの表
面保護層を付与しても耐刷性,耐湿性を大幅に向
上することができない状況にある。
Conventionally, electrophotographic photoreceptors have been used, for example, amorphous Se, photoreceptors made by doping amorphous Se with impurities such as As, Te, and Sb, or ZnO and CdS.
A photoreceptor, etc., in which the compound is dispersed in a resin binder, is used. However, these photoreceptors have problems in terms of environmental pollution, thermal stability, and mechanical strength.
In order to solve these problems, in recent years amorphous silicon (hereinafter referred to as a-Si) has been used as a photoconductive layer.
It is proposed to use However, a-Si produced by vapor deposition or sputtering
has a low specific resistance of 10 5 Ωcm in the dark and extremely low photoconductivity, making it undesirable as an electrophotographic photoreceptor. In such a-Si, a so-called dangling bond, in which the Si-Si bond is broken, is generated, and many localized levels exist within the energy gap due to this defect. For this reason, hopping conduction of thermally excited carriers occurs, resulting in a decrease in dark specific resistance, and photoconductivity is deteriorated because photoexcited carriers are captured in localized levels. On the other hand, amorphous silicon hydride (a-Si:H) created by glow discharge decomposition of silane gas (SiH 4 )
By capturing the above defects with hydrogen atoms (H) and bonding H to Si, the number of dangling bonds can be greatly reduced, resulting in extremely good photoconductivity and improved p-type and n-type valences. Although electronic control has become possible, the dark resistivity value is at most 10 8 to 10 9 Ωcm, which is still low compared to the resistivity value of 10 12 Ωcm or more, which is sufficient for an electrophotographic photoreceptor. Therefore, such a-Si:H
The photoreceptor has a high dark decay rate of surface potential and a low initial charging potential. Therefore, such a-Si:H
By doping an appropriate amount of boron to impart charge retention ability to the material, the specific resistance can be increased to over 10 12 Ωcm, making it possible to apply it to the Carlson copying process. Although a photoreceptor with such an a-Si:H surface can initially produce good images, it often shows poor images when the images are evaluated after being stored in the air or high humidity for a long period of time. It is known that this occurs. It has also been found that repeating the copying process many times gradually causes image blurring. It has been confirmed that such deteriorated photoreceptors are prone to image blurring, especially in high humidity environments, and that as the number of copies increases, the critical humidity at which image blurring begins to occur tends to gradually decrease. To check for such image blurring, it is necessary to repeatedly make tens of thousands of copies using an actual copying machine and then visually inspect the images, which requires a huge amount of effort. As mentioned above, a-Si: Photoreceptors are chemical species (ozone, nitrogen oxides, nascent oxygen, etc.) that are generated when exposed to the atmosphere or moisture over a long period of time, or due to corona discharge during the copying process.
It is believed that the outermost surface of the photoreceptor is easily affected by this, and some kind of chemical alteration causes image defects. Although the deterioration mechanism has not been sufficiently investigated to date, in order to prevent the occurrence of such image defects and improve printing durability, a protective layer is applied to the surface of the a-Si:H photoreceptor. Attempts have been made to provide chemical stabilization. For example, as a surface protective layer, amorphous silicon hydrocarbon (a-Si x C 1x :H, 0<x<1) or amorphous silicon nitride (a-
A known method is to prevent deterioration of the photoreceptor surface layer due to the copying process or environmental atmosphere by providing Si x N 1-x :H, 0<x<1. It is true that printing durability can be considerably improved by selecting the optimal carbon or nitrogen concentration in the surface protective layer, but it is not possible to maintain moisture resistance in a high-humidity atmosphere, and tens of thousands of sheets In the copying process, image blurring occurs at relative humidity levels of 60%, and even with these surface protective layers, printing durability and moisture resistance cannot be significantly improved.

【発明の目的】[Purpose of the invention]

本発明は、これに対してアモルフアスシリコン
からなる光導電層の上に適応した表面保護層を設
けることにより、耐湿性および耐コロナ性の優れ
た寿命の長い電子写真用感光体を提供することを
目的とする。
In view of this, the present invention provides an electrophotographic photoreceptor with excellent moisture resistance and corona resistance and a long life by providing a suitable surface protective layer on a photoconductive layer made of amorphous silicon. With the goal.

【発明の要点】[Key points of the invention]

本発明は、感光体の表面保護層の表面において
気中で測定された純水の接触角が耐湿性およびび
耐コロナ性と相関性があることを見出し、アモル
フアス材料よりなり、純水の接角が40度ないし75
度である表面保護層を設けることにより上述の目
的を達成する。
The present invention has discovered that the contact angle of pure water measured in air on the surface of the surface protective layer of a photoreceptor has a correlation with moisture resistance and corona resistance. angle between 40 degrees and 75
The above-mentioned objective is achieved by providing a surface protective layer that is of a certain degree.

【発明の実施例】[Embodiments of the invention]

本発明は以下に述べる試験結果に基づいてい
る。表面保護層は、照射された光を良く透過し、
光導電層のエネルギーギヤツプ、例えば硼素を添
加したa−Si:Hの場合1.6〜1.8eVよりも大きい
エネルギーギヤツプを持つ必要があるため、エネ
ルギーギヤツプが2.0eV以上の種々の表面保護層
を種々の元素の組合せによつて成膜し、の耐湿性
と接触角との関係を調べた。第1図は試験の対象
とした感光体の層構成を模式的に示したもので、
アルミニウムからなる導電性基板1の上に硼素を
添し加たa−Si:Hを容量結合型RFグロー放電
により厚さ15〜30μmに成膜して光導電層2を形
成し、さらにその上に同様な方法で表面保護層3
を厚さ0.1〜2μmに成膜した。グロー放電発生の
ためには13.56MHzの高周波電源を用いた。 第1表は試験の対対象となつた感光体の表面保
護層3の製造条件である。
The present invention is based on the test results described below. The surface protective layer transmits the irradiated light well,
The energy gap of the photoconductive layer, for example, in the case of boron-doped a-Si:H, must be larger than 1.6 to 1.8 eV. Surface protective layers were formed using combinations of various elements, and the relationship between moisture resistance and contact angle was investigated. Figure 1 schematically shows the layer structure of the photoreceptor that was tested.
A photoconductive layer 2 is formed by depositing boron-doped a-Si:H on a conductive substrate 1 made of aluminum to a thickness of 15 to 30 μm by capacitively coupled RF glow discharge, and then a photoconductive layer 2 is formed on the conductive substrate 1 made of aluminum. Apply surface protective layer 3 in the same manner as above.
was formed into a film with a thickness of 0.1 to 2 μm. A 13.56MHz high frequency power source was used to generate glow discharge. Table 1 shows the manufacturing conditions for the surface protective layer 3 of the photoreceptor that was the subject of the test.

【表】【table】

【表】 第2表は、これらの各表面保護層の初期の接触
角と、25℃,湿度70%の雰囲気中で10分及び60分
コロナに暴露した後の接触角及びその後の画像の
質を示している。ここで接触角とは第2図に示し
たように、表面保護層3と純水の水滴4と空気5
との界面で作られる角θのことである。第2表中
の「◎」は極めて鮮明な画像を得られたもの、
「〇」は良好な画像が得られたもの、「△」は部分
的にぼけた画像のものであり、「×」は全面にわ
たつてぼけが発生したものである。
[Table] Table 2 shows the initial contact angle of each of these surface protective layers, the contact angle and subsequent image quality after exposure to corona for 10 and 60 minutes in an atmosphere of 25°C and 70% humidity. It shows. Here, the contact angle refers to the relationship between the surface protective layer 3, pure water droplet 4, and air 5, as shown in Figure 2.
This is the angle θ created at the interface with. "◎" in Table 2 means that extremely clear images were obtained;
"O" indicates that a good image was obtained, "△" indicates that the image was partially blurred, and "x" indicates that blur occurred over the entire surface.

【表】 このように、初期の接触角が45度ないし70度で
ある表面保護層、すなわちa−SiN:H,a−
SiC:F:及びa−SiC:O:F:H膜は、接触
角変化が小で耐湿性良好である。これらの表面保
護層を有する感光体について実機にて高湿中での
コピーテストを行つた結果、10万枚コピー後も画
像のぼけは生じなかつた。つまり感光体の耐湿性
はエネルギーギヤツプや成分元素及びその組成に
よつて一義に決まるのではなく、水との接触角を
評価することによつてはじめて明確な対応を示す
のである。 このことは、感光体表面の耐湿性が溌水性に関
連を持ち、それ故純水との接触角の値によつて推
定できるものと考えられる。しかし純水の代わり
に他の液体、例えば極性のないよう化エチレンを
用いて測定した接角についても、耐湿性良好な膜
質を示す上下限を得ることができるので、耐湿性
を示すパラメータとして測定の容易な他の液体と
の接触角を用いることもできる。
[Table] In this way, the surface protective layer with an initial contact angle of 45 degrees to 70 degrees, that is, a-SiN:H, a-
The SiC:F: and a-SiC:O:F:H films have small contact angle changes and good moisture resistance. Copying tests were conducted on photoreceptors with these surface protective layers under high humidity using actual equipment, and no blurring of the images occurred even after copying 100,000 copies. In other words, the moisture resistance of a photoreceptor is not determined solely by the energy gap, component elements, and their composition, but can be determined clearly by evaluating the contact angle with water. This is considered to be because the moisture resistance of the photoreceptor surface is related to water repellency, and therefore can be estimated from the value of the contact angle with pure water. However, even when measuring the tangent angle using other liquids instead of pure water, such as non-polar ethylene iodide, it is possible to obtain upper and lower limits that indicate film quality with good moisture resistance, so it can be measured as a parameter that indicates moisture resistance. Contact angles with other liquids that are easy to use can also be used.

【発明の効果】【Effect of the invention】

本発明は、a−Si光導電層を有する感光体の光
導電層を覆うアモルフアス表面保護層を表面が純
水と成す接触角によつて選定することにより、耐
湿性,耐コロナ性の優れた感光体を得ることがで
きる。従つて新しい表面保護層の開発に対しても
有効に利用することができ、a−Si感光体の特性
向上に与える効果は極めて大きい。
The present invention provides excellent moisture resistance and corona resistance by selecting an amorphous surface protective layer that covers the photoconductive layer of a photoreceptor having an a-Si photoconductive layer according to the contact angle that the surface makes with pure water. A photoreceptor can be obtained. Therefore, it can be effectively used for the development of new surface protective layers, and has an extremely large effect on improving the characteristics of a-Si photoreceptors.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の実施例の層構成を示す断面
図、第2図は本発明によつて用いられる接触角の
測定原理を示す説明図である。 1:導電性基体、2:光導電層、3:表面保護
層、4:水滴、θ:接触角。
FIG. 1 is a cross-sectional view showing the layer structure of an embodiment of the present invention, and FIG. 2 is an explanatory view showing the principle of contact angle measurement used in the present invention. 1: conductive substrate, 2: photoconductive layer, 3: surface protective layer, 4: water droplet, θ: contact angle.

Claims (1)

【特許請求の範囲】[Claims] 1 アモルフアスシリコンからなる光導電層の上
にアモルフアス材料よりなる表面保護層を有する
ものにおいて、表面において気中で測定された純
水の接触角が40度ないし75度である表面保護層が
設けられたことを特徴とする電子写真用感光体。
1 In a device having a surface protective layer made of an amorphous material on a photoconductive layer made of amorphous silicon, the surface protective layer is provided with a contact angle of pure water of 40 degrees to 75 degrees when measured in air on the surface. An electrophotographic photoreceptor characterized by:
JP20922184A 1984-10-05 1984-10-05 Electrophotographic sensitive body Granted JPS6187159A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20922184A JPS6187159A (en) 1984-10-05 1984-10-05 Electrophotographic sensitive body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20922184A JPS6187159A (en) 1984-10-05 1984-10-05 Electrophotographic sensitive body

Publications (2)

Publication Number Publication Date
JPS6187159A JPS6187159A (en) 1986-05-02
JPH0462579B2 true JPH0462579B2 (en) 1992-10-06

Family

ID=16569351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20922184A Granted JPS6187159A (en) 1984-10-05 1984-10-05 Electrophotographic sensitive body

Country Status (1)

Country Link
JP (1) JPS6187159A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2595635B2 (en) * 1988-03-24 1997-04-02 富士電機株式会社 Electrophotographic photoreceptor
JPH06175466A (en) * 1992-12-10 1994-06-24 Canon Inc Contact electrifying device and imaging forming device using it
US5583285A (en) * 1994-11-29 1996-12-10 Lucent Technologies Inc. Method for detecting a coating material on a substrate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5888753A (en) * 1981-11-24 1983-05-26 Oki Electric Ind Co Ltd Electrophotographic photoreceptor
JPS6022132A (en) * 1983-07-18 1985-02-04 Hitachi Ltd Laminated photosensitive body and its manufacture
JPS6022131A (en) * 1983-07-18 1985-02-04 Canon Inc Photoconductive member

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5888753A (en) * 1981-11-24 1983-05-26 Oki Electric Ind Co Ltd Electrophotographic photoreceptor
JPS6022132A (en) * 1983-07-18 1985-02-04 Hitachi Ltd Laminated photosensitive body and its manufacture
JPS6022131A (en) * 1983-07-18 1985-02-04 Canon Inc Photoconductive member

Also Published As

Publication number Publication date
JPS6187159A (en) 1986-05-02

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