JPH0462146A - Preparation of metal plate having high insulating properties - Google Patents
Preparation of metal plate having high insulating propertiesInfo
- Publication number
- JPH0462146A JPH0462146A JP16784690A JP16784690A JPH0462146A JP H0462146 A JPH0462146 A JP H0462146A JP 16784690 A JP16784690 A JP 16784690A JP 16784690 A JP16784690 A JP 16784690A JP H0462146 A JPH0462146 A JP H0462146A
- Authority
- JP
- Japan
- Prior art keywords
- metal plate
- aln
- emulsion
- metal
- suspended
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 39
- 239000002184 metal Substances 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000000839 emulsion Substances 0.000 claims abstract description 12
- 239000000843 powder Substances 0.000 claims abstract description 8
- 238000005245 sintering Methods 0.000 claims abstract description 6
- 238000009413 insulation Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000002904 solvent Substances 0.000 abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 abstract description 4
- -1 for example Inorganic materials 0.000 abstract description 3
- 229910052715 tantalum Inorganic materials 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- 239000000956 alloy Substances 0.000 abstract description 2
- 229910052804 chromium Inorganic materials 0.000 abstract description 2
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 2
- 229910052758 niobium Inorganic materials 0.000 abstract description 2
- 239000002245 particle Substances 0.000 abstract description 2
- 229910017083 AlN Inorganic materials 0.000 abstract 10
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 abstract 10
- 229910052720 vanadium Inorganic materials 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
本発明は、電子部品の絶縁基板として用いられる高絶縁
性金属基板の製造方法に関するものである。The present invention relates to a method of manufacturing a highly insulating metal substrate used as an insulating substrate for electronic components.
近年、電子機器の高速化、集積密度の増加等に伴って、
電子部品の絶縁基板は高絶縁化、高放熱化が重要課題と
しで挙げられている。そして絶縁基板としては現在、プ
ラスチックを材料とするもの、セラミックを材料とする
もの、金属を材料とするものが提供されている。In recent years, with the increase in speed and integration density of electronic devices,
High insulation and high heat dissipation are cited as important issues for insulated substrates for electronic components. Currently, as insulating substrates, those made of plastic, ceramic, and metal are available.
しかし、プラスチックを材料とする基板は安価に！！！
遣でき絶縁性も高いが、放熱性がかなり低いという問題
がある。またセラミックを材料とする基板は絶縁性は高
いが放熱性は金属に劣って十分ではない。さらに金属を
材料とする基板は、放熱性は高いが絶縁性のうえで問題
がある。
本発明は上記の点に鑑みて為されたものであり、放熱性
が優れた金属を材料とし絶縁性にも優れた高絶縁性金属
基板の製造方法を提供することを目的とするものである
。However, substrates made of plastic are cheaper! ! !
Although it has high insulation properties, it has the problem of very low heat dissipation. Further, although substrates made of ceramic have high insulation properties, their heat dissipation properties are inferior to metals and are not sufficient. Furthermore, substrates made of metal have high heat dissipation properties, but have problems with insulation. The present invention has been made in view of the above points, and it is an object of the present invention to provide a method for manufacturing a highly insulating metal substrate that is made of metal with excellent heat dissipation and has excellent insulation properties. .
本発明に係る高絶縁性金属基板の製造方法は、金属板１
の表面にＡｌＮ粉末を懸濁させた？Ｌ液２を塗布し、次
いで高温でＡｆＮを焼結してＡｌＮの焼結層３で金属板
１の表面をコーティングすることを特徴とするものであ
る。
以下、本発明の詳細な説明する。
金属板１としては特The method for manufacturing a highly insulating metal substrate according to the present invention includes a metal plate 1
AlN powder suspended on the surface of ? The method is characterized in that the surface of the metal plate 1 is coated with a sintered layer 3 of AlN by applying L liquid 2 and then sintering AfN at a high temperature. The present invention will be explained in detail below. As the metal plate 1,
【こ限定されるものではないが、焼
結する際の高温に耐える？ＩＩＪ融５へ金属、例えばＷ
、Ｃｒ、Ｍｏ、■、Ｎｂ、Ｔａやこれらの合金で作成さ
れたものを用いるのが好ましい（第１図（ａ））またＡ
ｌＮ（窒化アルミニウム）は、これを懸濁させた乳液と
して使用されるものであり、乳液の溶媒としては水や、
その他メタ／−ル、エタノール、フロバ／−ル、アセト
ン、メチルエチルケトン、メトキシプロパ７−ル、ジメ
チルホルムアミド、メチルイソブチルケトンなどの有Ｗ
ｉ系の溶媒を用いることができる。有機系の溶媒を用い
れば金属板１を酸化させたり腐食させたりするおそれな
く焼結をおこなうことができる。またＡｌＮとしては粒
径が数１１００ｎ〜数１００Ｏｎ＠程度の微粉末を用い
るのが好ましい。そしてこのＡｌＮ粉末を懸濁した乳液
２を金属板１の表面に塗布する。
塗布の厚みは数１０μ匍〜数１００μ鶴程度が好ましい
（鴫１図（ｂ））。
このようにＡｌＮ粉末を懸濁した乳液２を金属板１の表
面に塗布した後に、金属板１を１５００゛Ｃ〜２０００
°Ｃ程度の高温で加熱し、ＡｅＮを焼結して金属板１の
表面をｉＮの焼結層３でコーティングした絶縁基板を得
ることができる（ｔ！８１図（Ｃ））。
【作 用】
本発明にあっては、金属板の表面を酸化させたりするよ
うな必要なく、ＡｆＮの焼結層を形成することで、金属
板の高い放熱性を維持したまま高い電気絶縁性を確保す
ることができる。[Although not limited to this, can it withstand high temperatures during sintering? IIJ fusion 5 to metal, e.g. W
, Cr, Mo, ■, Nb, Ta, or alloys thereof are preferably used (Fig. 1(a)).
IN (aluminum nitride) is used as an emulsion in which it is suspended, and the solvent for the emulsion is water,
Others include methanol, ethanol, frobyl, acetone, methyl ethyl ketone, methoxypropyl, dimethylformamide, methyl isobutyl ketone, etc.
i-based solvents can be used. If an organic solvent is used, sintering can be performed without fear of oxidizing or corroding the metal plate 1. Further, as AlN, it is preferable to use a fine powder having a particle size of about several 1100 nm to several 100 On@. An emulsion 2 in which this AlN powder is suspended is applied to the surface of the metal plate 1. The thickness of the coating is preferably about several 10 μm to several 100 μm (Fig. 1(b)). After applying the emulsion 2 in which AlN powder is suspended on the surface of the metal plate 1, the metal plate 1 is heated to 1500°C to 2000°C.
It is possible to obtain an insulating substrate in which the surface of the metal plate 1 is coated with the sintered layer 3 of iN by heating at a high temperature of about °C and sintering the AeN (Fig. 81 (C)). [Function] In the present invention, by forming a sintered layer of AfN without the need to oxidize the surface of the metal plate, it has high electrical insulation while maintaining the high heat dissipation of the metal plate. can be ensured.
以下本発明を実施例によって具体的に説明する。
艮１健１
金属板としてタングステン（Ｗ）板を用い、水にｉＮを
懸濁させて調製したｆＬ液を金属板の表面に塗布し、こ
れを１７００℃で３時間加熱することによって、金属板
の表面にＡｌＮの焼結層をコーティングした電子部品用
の絶縁基板を得た。
炙１九先
金属板としてタングステン（Ｗ）板を用い、エタノール
にｉＮを懸濁させて調製した乳液を用いるようにした他
は、実施例１と同様にして電子部品用の絶縁基板を得た
。
艮峯九走
金属板としてタンタル（Ｔａ）板を用い、水にＡｌ！Ｎ
をｌ！Ａ）Ｆ５させて調製した乳液を用いるようにした
他は、実施例１と同様にして電子部品用の絶縁基板を得
た。
■発明の効果】
上述のように本発明にあっては、金属板の表面にＡＺＮ
粉末な懸濁させた７Ｌ液を塗布し、次いで高温でＡｌＮ
を焼結してＡｐＮの焼結層で金属板の表面をコーティン
グするようにしたので、金属板の高い放熱性を維持した
ままｉＮの焼結層で高い絶縁性を得ることができ、放熱
性と絶縁性とがいずれも優れた基板を製造することがで
きるものである。The present invention will be explained in detail below using examples. 1 Ken 1 Using a tungsten (W) plate as a metal plate, apply an fL solution prepared by suspending iN in water to the surface of the metal plate, and heat it at 1700°C for 3 hours to form a metal plate. An insulating substrate for electronic components was obtained, the surface of which was coated with a sintered layer of AlN. An insulating substrate for electronic components was obtained in the same manner as in Example 1, except that a tungsten (W) plate was used as the metal plate and an emulsion prepared by suspending iN in ethanol was used. . A tantalum (Ta) plate is used as the metal plate, and Al! N
l! A) An insulating substrate for electronic components was obtained in the same manner as in Example 1, except that the emulsion prepared by F5 was used. ■Effect of the invention As described above, in the present invention, AZN is coated on the surface of the metal plate.
Apply 7L of powdered suspension and then apply AlN at high temperature.
Since the surface of the metal plate is coated with a sintered layer of ApN, it is possible to obtain high insulation properties with the sintered layer of iN while maintaining the high heat dissipation properties of the metal plate. It is possible to manufacture a substrate with excellent both of properties and insulation properties.
第１図は本発明の製造方法の手順を示す概略断面図であ
る。
１は金属板、２はＡｌＮを懸濁した乳液、３はＡｌＮの
焼結層である。FIG. 1 is a schematic sectional view showing the steps of the manufacturing method of the present invention. 1 is a metal plate, 2 is an emulsion in which AlN is suspended, and 3 is a sintered layer of AlN.
Claims (1)
布し、次いで高温でＡｌＮを焼結してＡｌＮの焼結層で
金属板の表面をコーティングすることを特徴とする高絶
縁性金属基板の製造方法。(1) High insulation properties characterized by coating the surface of a metal plate with an emulsion containing suspended AlN powder, and then sintering the AlN at high temperature to coat the surface of the metal plate with a sintered layer of AlN. Method for manufacturing metal substrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16784690A JPH0462146A (en) | 1990-06-26 | 1990-06-26 | Preparation of metal plate having high insulating properties |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16784690A JPH0462146A (en) | 1990-06-26 | 1990-06-26 | Preparation of metal plate having high insulating properties |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0462146A true JPH0462146A (en) | 1992-02-27 |
Family
ID=15857173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16784690A Pending JPH0462146A (en) | 1990-06-26 | 1990-06-26 | Preparation of metal plate having high insulating properties |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0462146A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5570877A (en) * | 1994-07-27 | 1996-11-05 | Ricoh Company, Ltd. | Paper turning device for an image forming apparatus |
-
1990
- 1990-06-26 JP JP16784690A patent/JPH0462146A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5570877A (en) * | 1994-07-27 | 1996-11-05 | Ricoh Company, Ltd. | Paper turning device for an image forming apparatus |
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