JPH0456826A - Transfer device for fine pattern - Google Patents

Transfer device for fine pattern

Info

Publication number
JPH0456826A
JPH0456826A JP2165458A JP16545890A JPH0456826A JP H0456826 A JPH0456826 A JP H0456826A JP 2165458 A JP2165458 A JP 2165458A JP 16545890 A JP16545890 A JP 16545890A JP H0456826 A JPH0456826 A JP H0456826A
Authority
JP
Japan
Prior art keywords
workpiece
fine pattern
support substrate
alignment
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2165458A
Other languages
Japanese (ja)
Other versions
JP2986856B2 (en
Inventor
Akira Okazaki
岡崎 暁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP2165458A priority Critical patent/JP2986856B2/en
Publication of JPH0456826A publication Critical patent/JPH0456826A/en
Application granted granted Critical
Publication of JP2986856B2 publication Critical patent/JP2986856B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Liquid Crystal (AREA)

Abstract

PURPOSE:To perform accurate and clear transfer by using an alignment mechanism in which a holder part for a substance to be processed and the chuck board part of a fine pattern supporting base plate oppositely provided in parallel with the holder part are made to closely contact after aligning them. CONSTITUTION:This device is provided with the holder part 11 allowing the base plate to be processed 7 be vacuum-sucked, the chuck board part 2 which is oppositely provided in parallel with the part 11 and makes the supporting base plate 11 in which the fine pattern is formed to be vacuum-sucked, the alignment mechanism 3 allowing both the supporting base plate 11 and the base plate to be processed 7 closely contact after aligning them in a state that both of them are made to have a gap, a press-contacting mechanism 4 constituted of a pressure contact system or a vacuum contact system to press-contact the supporting base plate 11 and the substance to be processed 7 which are made to closely contact to each other for a specified time, and a mechanism 5 to peel the supporting substrate 11 and the substance to be processed 7 after press-contacting. Thus, the fine pattern for the transfer can accurately, clearly and also effectively be transferred and formed from the supporting base plate 11 to the substance to be processed 7 at a low price.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は微細パターンの転写装置に係わり、詳しくは薄
膜トランジスタ、薄膜ダイオード、太陽電池、薄膜セン
サー、各種半導体素子、プリント基板等を初めとする製
造過程おいて施される微細パターンを転写手段にて形成
する際に利用可能であり、その微細パターンの転写を高
精度で量産的に行うに好適な転写装置に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a fine pattern transfer device, and more specifically, to the production of thin film transistors, thin film diodes, solar cells, thin film sensors, various semiconductor devices, printed circuit boards, etc. The present invention relates to a transfer device that can be used when forming a fine pattern applied in a process using a transfer means, and is suitable for mass-producing the transfer of the fine pattern with high precision.

〔従来の技術 及び発明が解決しようとする課題〕[Conventional technology and the problem to be solved by the invention]

薄膜トランジスタを用いたカラー液晶ディスブレー(T
PT−LCD)が、近年ポケットテレビ、ポータプルテ
レビに組み込まれて実用化の段階に入ったばかりである
が、近頃では対角20インチ、40インチ、70インチ
のような大型液晶フラ。
Color liquid crystal display using thin film transistors (T
In recent years, PT-LCD (PT-LCD) has been incorporated into pocket TVs and portable TVs, and has just entered the stage of practical use.

トディスプレーを指向した開発が既に盛んになっている
。このような動向により20インチ、40インチ、70
インチ等の如き大型TPTの製造が要求され始めた。そ
のため形成すべき薄膜トランジスタにおけるパターンも
微細化とともに基板の大型化の傾向を余儀無くされ、且
つ量産化が必要となった。かかる生産内容の要求に対し
て、現行のフォトリソグラフィー法はステッパー等の大
型露光装置の開発や設備投資に真人な費用がかがり、し
かもフォトマスクの適用サイズの限界がある等、大きな
問題点を抱えている。
Development aimed at display devices is already gaining momentum. Due to these trends, 20 inch, 40 inch, 70 inch
There began to be a demand for manufacturing large TPTs such as inch diameter TPTs. For this reason, the pattern of thin film transistors to be formed has been forced to become smaller and the size of the substrate has become larger, and mass production has become necessary. In response to such production requirements, the current photolithography method has major problems, such as the development of large-scale exposure equipment such as steppers and capital investment, and the fact that there is a limit to the applicable size of the photomask. ing.

一方、上記フォトリソグラフィー法におけるレジスト膜
の現像までの工程に代えて、印刷法ニよりレジスト膜を
被加工物上に直接所望のパターンで印刷形成してエツチ
ングによる微細パターンを形成する方法も知られている
On the other hand, instead of the process up to development of the resist film in the photolithography method, a method is also known in which a resist film is directly printed in a desired pattern on the workpiece using a printing method and a fine pattern is formed by etching. ing.

このレジスト膜の形成を印刷手段にて行う上記加工方法
は、40〜70インチ等のTPTの如き商品の大型化に
よるパターン形成にも大きな制約がなく対応し易いもの
の、以下に述べるような問題点がある。
Although the above-mentioned processing method in which the resist film is formed by printing means does not have any major restrictions and can be easily applied to pattern formation due to the increase in the size of products such as TPT of 40 to 70 inches, it has the following problems. There is.

即ち、上記印刷手段としては凹版オフセット印刷法、平
版オフセット印刷法、面別法、スクリーン印刷法等が代
表的に適用されているが、これらの印刷手段は何れも、
比較的画線幅が大きい(200μm以上)レジストパタ
ーン印刷には適するものの、画線幅がそれ以下の微細パ
ターンの印刷形成には不向きであった。中でも凹版オフ
セット印刷法の場合、硬めのインキを使用すれば10〜
90um程度の細線パターンの印刷ができるが、被加工
物へのインキの転着性が悪くなってしまい、また他の印
刷法も同様、より細線のパターンを印刷しようとすると
塗膜厚が同時に薄くなる傾向があるため、結局、耐蝕性
を要すレジストパターン形成には不向きであった。また
印刷されるレジストパターンがインキの流動性、版の圧
力などの影響やインキの一部が転移しないで版に残留す
る等により変形したものとなってしまい、印刷パターン
の再現性に劣るという欠点もあった。更に、被加工物の
表面状B(凹凸の有無等)によって印刷形成するレジス
ト膜の線幅、膜厚等が異なってしまったり、凹部に印刷
ができない不具合があり、同様に被加工物の表層の種類
等によってインキとの密着性が悪く良好な印刷が行えな
いという不具合もある。しかもレジスト膜を被加工物表
面に直接印刷形成するため、印刷用レジストインキに含
まれている不都合な不純物(Naイオン等)がレジスト
膜中にそのまま残留してしまったり、その他にも被加工
物の種類によって印刷による汚染等が発生する問題があ
った。一般に上記印刷法に適用しているレジストインキ
は粘度が大きいため上記の不純物を除くための精製を行
なうことが不可能であった。
That is, as the above-mentioned printing means, intaglio offset printing method, lithographic offset printing method, side-by-side printing method, screen printing method, etc. are typically applied, but all of these printing methods
Although it is suitable for printing a resist pattern with a relatively large line width (200 μm or more), it is not suitable for printing a fine pattern with a smaller line width. Among them, in the case of the intaglio offset printing method, if a harder ink is used,
Although it is possible to print thin line patterns of about 90 um, the transfer of ink to the workpiece becomes poor, and similarly to other printing methods, when attempting to print thinner line patterns, the coating film thickness becomes thinner. As a result, it was unsuitable for forming resist patterns that required corrosion resistance. Another disadvantage is that the printed resist pattern is deformed due to the influence of the fluidity of the ink, the pressure of the plate, and some of the ink remains on the plate without being transferred, resulting in poor reproducibility of the printed pattern. There was also. Furthermore, the line width, film thickness, etc. of the resist film to be printed may differ depending on the surface condition B of the workpiece (presence or absence of irregularities, etc.), or there may be problems in that it is not possible to print on concave areas. Depending on the type of ink, there is also the problem that good printing cannot be performed due to poor adhesion with ink. Moreover, since the resist film is directly printed on the surface of the workpiece, undesirable impurities (such as Na ions) contained in the printing resist ink may remain in the resist film, and other problems may occur on the workpiece. Depending on the type of paper, there is a problem of contamination caused by printing. Generally, the resist ink used in the above-mentioned printing method has a high viscosity, so it has been impossible to purify it to remove the above-mentioned impurities.

以上のように、フォトリソ法による加工方法と印刷法に
よる加工方法は何れも一長一短があり、その結果、特に
前述の如き被加工物の加エバターンの微細化、加工基板
の大型化の傾向とともに量産化傾向に充分ムこ対応でき
る方法が必要とされていた。
As mentioned above, processing methods using photolithography and printing methods both have advantages and disadvantages, and as a result, mass production is becoming more difficult, especially with the trend of miniaturization of processing patterns of workpieces and enlargement of processing substrates as mentioned above. There was a need for a method that could adequately accommodate trends.

(課題を解決するための手段] そこで本発明者は上記従来技術の各種問題点を克服する
ために研究を重ねた結果、フォトリソグラフィー法にお
けるフォトマスクに代えて、別途支持材にパターン状に
形成した紫外線遮断性電着層を、フォトレジストを塗布
してなる被加工物上に転写せしめ、その紫外線遮断性電
着層によって上記レジスト膜を露光現像することにより
、特にレジスト膜の微細なパターン化を従来法に比べ精
度を落とすことなく極めて安価に且つ効率的に行うこと
が可能となり、そのため目的とする微細パターンの加工
もエツチング処理を経て高精度で且つ能率良く、しかも
安価に施すことができる加工方法を見出した。そして本
発明者は上記知見に基づき更に研究を進め、上述の支持
材に形成した紫外線遮断性電着層の如き微細パターンを
被加工物側に転写する作業を行うに適した転写装置を開
発し、本発明を完成するに至った。
(Means for Solving the Problems) Therefore, as a result of repeated research in order to overcome the various problems of the above-mentioned conventional techniques, the present inventor has developed a method for forming a pattern on a support material separately, instead of using a photomask in the photolithography method. The ultraviolet-blocking electrodeposited layer is transferred onto a workpiece coated with a photoresist, and the resist film is exposed and developed using the ultraviolet-blocking electrodeposited layer, thereby creating a particularly fine pattern of the resist film. can be carried out extremely cheaply and efficiently without sacrificing accuracy compared to conventional methods. Therefore, the desired fine pattern can be processed with high precision, efficiently, and inexpensively through etching processing. Based on the above findings, the present inventors have further conducted research to find a processing method suitable for transferring a fine pattern such as the ultraviolet-blocking electrodeposited layer formed on the above-mentioned support material to the workpiece side. The present invention was completed by developing a transfer device based on the above-mentioned technology.

即ち本発明微細パターンの転写装置は、支持基板に形成
した所望形状の転写用微細パターンを該基板から被加工
物に、該基板側又は被加工物側に塗布形成する粘着層を
介して転写させる転写装置であって、被加工物を真空吸
着させるホルダー部と、該ホルダー部と平行に対向して
設置される、微細パターンを形成した支持基板を真空吸
着させるチャック台部と、支持基板と被加工物とをギャ
ップを持たせた状態で位置合わせした後に両者を密着さ
せるアライメント機構と、密着した支持基板と被加工物
を所定時間圧着させる圧力密着方式或いは真空密着方式
からなる圧着機構と、圧着後の支持基板と被加工物を剥
離させる機構を備えていることを特徴とするものである
That is, the fine pattern transfer device of the present invention transfers a fine pattern for transfer of a desired shape formed on a support substrate from the substrate to a workpiece via an adhesive layer coated on the substrate side or the workpiece side. The transfer device includes a holder part that vacuum-chucks a workpiece, a chuck base part that is installed parallel to and opposite to the holder part and vacuum-chucks a support substrate on which a fine pattern has been formed, and the support substrate and the workpiece. An alignment mechanism that brings the workpiece into close contact with the workpiece after aligning them with a gap; A pressure bonding mechanism that uses a pressure bonding method or a vacuum bonding method to press the supported substrate and the workpiece in close contact for a predetermined period; and crimping. This method is characterized by being equipped with a mechanism for separating the workpiece from the subsequent support substrate.

また本発明装置は、上記アライメント機構が、ビデオカ
メラ、顕微鏡、落射照明具、電子ライン発生器及びテレ
ビモニターからなる映像検出部と、チャック台をパルス
モータで前後、左右及び回転方向に移動させるアライメ
ント用駆動部とからなる装置とすることができる。更に
上記アラインメント機構が、支持基板と被加工物に予め
それぞれ設けたアライメント用マークを利用して位置合
わせを行う機構からなる装置とすることができる。
Further, in the apparatus of the present invention, the alignment mechanism moves an image detection unit consisting of a video camera, a microscope, an epi-illumination device, an electronic line generator, and a television monitor, and a chuck table in the front and back, left and right, and rotational directions using a pulse motor. It can be a device consisting of a drive unit for use. Further, the alignment mechanism may be a device that performs positioning using alignment marks provided in advance on the support substrate and the workpiece.

〔実施例〕〔Example〕

以下、本発明の実施例を図面に基づき説明する。 Embodiments of the present invention will be described below based on the drawings.

第1図は本発明転写装置の一例を示す概略図である。本
発明装置は同図に示すように基本的にホルダー部1、チ
ャック台部2、アライメント機構3、圧着機構4及び剥
離機構5から構成されるものである。
FIG. 1 is a schematic diagram showing an example of the transfer apparatus of the present invention. As shown in the figure, the apparatus of the present invention basically comprises a holder part 1, a chuck base part 2, an alignment mechanism 3, a pressure bonding mechanism 4, and a peeling mechanism 5.

ホルダー部1は、装置フレーム30等に固設されたホル
ダー本体6と該ホルダー本体6の下面側に被加工物7を
転写作業時に真空吸着させるための空気制御部8aから
なる。チャック台部2は、ホルダー本体6と平行に対向
するように設置された定盤からなるチャック台9と、該
チャック台9に転写用微細パターン10が形成された支
持基板11を真空吸着させる空気制御部8bからなる。
The holder section 1 includes a holder main body 6 fixed to an apparatus frame 30 or the like, and an air control section 8a for vacuum-adsorbing the workpiece 7 to the lower surface side of the holder main body 6 during the transfer operation. The chuck base 2 includes a chuck base 9 consisting of a surface plate installed parallel to and facing the holder body 6, and a support substrate 11 on which a fine transfer pattern 10 is formed on the chuck base 9. It consists of a control section 8b.

図中12は空気制御部8a、8bにそれぞれ配管連結さ
れた吸着溝である。被加工物及び支持基板は空気制御部
8の作動により吸着溝12において真空吸引されてホル
ダー本体6及びチャック台9に各々吸着される。
In the figure, reference numeral 12 denotes suction grooves connected to the air control units 8a and 8b through piping, respectively. The workpiece and the supporting substrate are vacuum-suctioned in the suction groove 12 by the operation of the air control unit 8, and are suctioned onto the holder body 6 and the chuck table 9, respectively.

アライメント機構3は、支持基板と被加工物の位置状態
を映像にて検知するための映像検出部13と該検出部1
3の画像情報に応してチャンク台9(即ち支持基板11
)を変位させるためのアライメント用駆動部14から構
成されている。映像検出部13は支持基板と被加工物の
位置関係を撮影し得る箇所に設置したビデオカメラ(C
CDカメラ)15、該カメラ15に装着した顕微鏡16
、撮影スポットを照らす落射照明具17、画像処理を行
う電子ライン発生器(CCU)18及びテレビモニター
19からなる。また駆動部14はチャック台9を水平面
において前後方向(図中矢印X)及び左右方向(同矢印
Y)方向に駆動伝達機構20を介して所定量移動させ得
るステッピングモータ21..21. 、同様に回転方
向(同矢印θ向に駆動伝達機構22を介して所定量移動
させ得るステッピングモータ21θからなる。上記駆動
部14は例えば各ステッピングモータ等を集中的にコン
トロールできる操作パネルを手動操作することにより作
動させることができるが、検出部13の情報に基づいて
自動作動するように構成してもよい。この駆動部14に
よるチャック台9の修正移動量は適宜設定されるが、例
えば前後及び左右方向に共に±3III11程度、回転
方向に±3゜程度である。またアライメント機構3は位
置合わせ終了後の支持基板と被加工物とを位置ズレしな
い状態のまま密着(当接)させるため、例えばチャック
台9をホルダー本体6に向けて移動させ得る密着用シリ
ンダー等からなる密着機構部23を備えている。
The alignment mechanism 3 includes an image detection section 13 for detecting the positional state of the support substrate and the workpiece using an image, and the detection section 1
Chunk stand 9 (i.e. support substrate 11
) for displacing the alignment drive unit 14. The image detection unit 13 uses a video camera (C
CD camera) 15, a microscope 16 attached to the camera 15
, an epi-illumination device 17 that illuminates the photographing spot, an electronic line generator (CCU) 18 that performs image processing, and a television monitor 19. The driving unit 14 is also powered by a stepping motor 21. which can move the chuck table 9 by a predetermined amount in the front-rear direction (arrow X in the figure) and left-right direction (arrow Y in the figure) on a horizontal plane via a drive transmission mechanism 20. .. 21. , similarly consists of a stepping motor 21θ that can be moved by a predetermined amount in the rotational direction (the same arrow θ direction) via a drive transmission mechanism 22. It can be activated by and about ±3III11 in both the left and right directions, and about ±3° in the rotational direction.Furthermore, the alignment mechanism 3 is used to bring the support substrate and workpiece into close contact with each other without misalignment after the alignment is completed. , for example, is provided with a close contact mechanism section 23 consisting of a close contact cylinder or the like that can move the chuck stand 9 toward the holder main body 6.

本実施例ではアライメント機構3として、上述の如き映
像手段を採用すると共にステッピングモータ等からなる
駆動部にて位置合わせを行う構成のものを例示したが、
このアライメント機構3は支持基板と被加工物とを成る
一定距離ギャップを持たせた(#間させた)状態で正確
な位置合ゎせを行い得るものであれば、他の機構構造の
ものを採用してもよい。基板と被加工物のアライメント
時の離間距離は適宜選定されるが、通常15m程度あれ
ばよい。
In this embodiment, the alignment mechanism 3 employs the above-mentioned imaging means and is configured to perform positioning using a drive unit consisting of a stepping motor or the like.
This alignment mechanism 3 can be used with any other mechanical structure as long as it can accurately align the supporting substrate and the workpiece with a fixed distance gap (#). May be adopted. The separation distance between the substrate and the workpiece during alignment is selected as appropriate, but it is usually about 15 m.

圧着機構部4は、上記アライメント機構3にて密着され
た支持基板と被加工物を所定時間圧着させるものであり
、圧力密着方式或いは真空密着方式からなる。本実施例
における圧着機構部4は圧力密着方式のもので、チャッ
ク台9を固設されたホルダー本体6に向けて移動させて
加圧する加圧用シリンダーを備えており、該加圧用シリ
ンダーはチャック台9の昇降用シリンダー24と兼用の
ものであってもよい、真空密着方式の圧着機構部4とす
る場合は、特に図示しないがホルダー本体6とチャック
台9とが当接により密閉空間を形成するように構成し、
その密閉空間であるチャンバー内を空気制御機にて真空
引きすることにより支持基板と被加工物を圧着せしめる
。圧着機構部4としては必要に応して上記両方式を併用
した構成のものでもよい。
The crimping mechanism section 4 crimps the support substrate and the workpiece that have been brought into close contact with each other by the alignment mechanism 3 for a predetermined period of time, and employs either a pressure contact method or a vacuum contact method. The crimping mechanism 4 in this embodiment is of a pressure contact type, and is equipped with a pressure cylinder that presses the chuck base 9 by moving it toward the fixed holder body 6. When the crimping mechanism section 4 is of a vacuum contact type, which may also be used as the lifting cylinder 24 of 9, the holder main body 6 and the chuck base 9 come into contact to form a sealed space, although not particularly shown. Configure it like this,
The support substrate and the workpiece are crimped together by evacuating the chamber, which is a closed space, using an air controller. The crimping mechanism 4 may have a structure that uses both of the above methods in combination, if necessary.

剥離機構5は、チャック台9をホルダー本体6から引き
離して下降させることができる駆動系構造のものであれ
ば特に限定されるものではなく、例えばチャンク台9の
昇降用ノリンダー24を該剥離機構の駆動部として兼用
することができる。この機構5は圧着機構4が真空密着
方式の場合、チャンバー内に圧縮エアーを吹き込みんで
剥離せしめるブロー機構等を備えている。
The peeling mechanism 5 is not particularly limited as long as it has a drive system structure that can separate the chuck table 9 from the holder body 6 and lower it. It can also be used as a drive unit. When the pressure bonding mechanism 4 is of a vacuum bonding type, this mechanism 5 is equipped with a blow mechanism that blows compressed air into the chamber to cause separation.

次に、本発明装置の作用について説明する。Next, the operation of the device of the present invention will be explained.

先ず、第3図(a)に示すように転写用微細パターン1
0を形成した支持基板11をチャック台9に載置して真
空吸着させると共に、被加工TyJ7をホルダー本体6
に真空吸着させる。尚、微細パターン10を形成した支
持基板11の表面には粘着層25が塗布形成されている
。この粘着層25は本発明装置よる微細パターンの転写
移行を容易且つ確実に行わしめるためのものであり、必
ずしも基板側に設ける必要はなく被加工物7側に塗布形
成しておいてもよい。
First, as shown in FIG. 3(a), a fine pattern 1 for transfer is formed.
The support substrate 11 on which 0 has been formed is placed on the chuck stand 9 and vacuum-adsorbed, and the workpiece TyJ7 is placed on the holder body 6.
vacuum adsorption. Note that an adhesive layer 25 is coated on the surface of the support substrate 11 on which the fine pattern 10 is formed. This adhesive layer 25 is for easily and reliably transferring the fine pattern by the apparatus of the present invention, and does not necessarily need to be provided on the substrate side, and may be formed by coating on the workpiece 7 side.

次に被加工物7と支持基板11の間隔が15+mw程度
になるよう昇降用シリンダー24を作動させてチャ、り
台9を上昇停止させる。しかる後、映像検出部13によ
り被加工物7と支持基板11の位宜関係をモニターしな
がら、操作パネルを操作して駆動部14の所定ステッピ
ングモータを作動させてチャック台9を前後、左右又は
回転方向に微移動せしめ、被加工物と支持基板の位置合
わせを行う。位置合わせは第2図に示すように任意の指
標に基づいて行なうことができるが、通常被加工物と支
持基板に予めアライメント用マークを形成しておき、そ
れらのマークどうしが合致するようにして行う。
Next, the lifting cylinder 24 is operated so that the distance between the workpiece 7 and the support substrate 11 is approximately 15+mW, and the carriage 9 is stopped from rising. Thereafter, while monitoring the positional relationship between the workpiece 7 and the support substrate 11 using the image detection section 13, the operation panel is operated to operate a predetermined stepping motor of the drive section 14 to move the chuck table 9 back and forth, left and right, or The workpiece is moved slightly in the rotational direction to align the workpiece and the support substrate. Alignment can be performed based on any index as shown in Figure 2, but usually alignment marks are formed on the workpiece and the supporting substrate in advance, and these marks are aligned. conduct.

位置合わせ終了後、アライメント機構による密着用シリ
ンダー23によりチャック台9を上昇させて支持基板1
1を被加工物7に密着せしめる。
After the alignment is completed, the chuck table 9 is raised by the close contact cylinder 23 of the alignment mechanism, and the support substrate 1 is
1 is brought into close contact with the workpiece 7.

次に、圧着機構4の加圧用シリンダーとして兼用する昇
降用シリンダー24を作動させてチャンク台9をホルダ
ー本体6に向けて圧接させ、第3図(b)に示すように
被加工物7と支持基板11とを所定時間圧着せしめる。
Next, the lifting cylinder 24, which also serves as a pressurizing cylinder of the crimping mechanism 4, is operated to press the chunk table 9 toward the holder body 6, and support the workpiece 7 as shown in FIG. 3(b). The substrate 11 is pressed for a predetermined period of time.

この圧着を真空密着方式を併用した圧着機構にて行なえ
ば、より良好で安定した転写が可能となる。
If this pressure bonding is performed using a pressure bonding mechanism that also uses a vacuum bonding method, better and more stable transfer can be achieved.

圧着完了後、剥離機構5の駆動部として兼用するWil
l用シリフシリンダ−24させてチソヤク台9を下降さ
せ、支持基板11を被加工物7から引き剥がす(第3図
(C))。この剥離により転写用微細パターンlOは支
持基板11より剥がれて被加工物7へ転写される。最後
に微細パターン10が転写された被加工物7を真空吸着
を解診してホルダー本体6から取り出し、以て本発明装
置による微細パターンの転写が終了する。
After the crimping is completed, Wil, which also serves as the driving part of the peeling mechanism 5,
1 cylinder 24 is lowered to lower the support board 11 from the workpiece 7 (FIG. 3(C)). As a result of this peeling, the transfer fine pattern 1O is peeled off from the support substrate 11 and transferred to the workpiece 7. Finally, the workpiece 7 onto which the fine pattern 10 has been transferred is removed from the holder main body 6 by vacuum suction, thereby completing the transfer of the fine pattern by the apparatus of the present invention.

本発明装置は以上の工程操作を繰り返して行なうことに
より、微細パターンの転写を精度良く量産的に行うこと
ができる。
By repeating the above process operations, the apparatus of the present invention can transfer fine patterns in a mass-produced manner with high precision.

上記の微細パターン10を形成した支持基板11及び被
加工物7として下記のものを使用した。まず上記支持基
板としては、0.2 m厚のステンレスの支持シートに
PVA・重クロム酸アンモニウムを主成分とする水溶性
感光液を塗布し、所定形状のマスクを用いて露光、現像
を行い、線幅10μm、膜厚1.0μmのパターンから
なる絶縁層26を形成しく第3図(a))、更にバーニ
ング処理を施して該絶縁層の耐水性及び電気絶縁性を強
化した後、Nl板を陽極、支持シートを陰極として下記
組成の浴と電着条件の電着を行い、支持シートのステン
レス露出面に膜厚が1.2μmのニッケル電着層を形成
し、この電着層を転写用微細パターン10とした支持基
板を使用した。チャック台に真空咬着させるに先立って
、支持基板のパターン形成面側に酢酸ビニル系の粘着剤
溶液を膜厚が1.2μmとなるように全面塗布した。
The following materials were used as the support substrate 11 on which the fine pattern 10 described above was formed and the workpiece 7. First, as the supporting substrate, a water-soluble photosensitive solution containing PVA/ammonium dichromate as the main ingredients is applied to a 0.2 m thick stainless steel supporting sheet, and then exposed and developed using a mask of a predetermined shape. After forming an insulating layer 26 consisting of a pattern with a line width of 10 μm and a film thickness of 1.0 μm (FIG. 3(a)), and further performing a burning process to strengthen the water resistance and electrical insulation properties of the insulating layer, an Nl plate was formed. Electrodeposition was carried out using the bath as an anode and the support sheet as a cathode and the electrodeposition conditions as shown below to form a nickel electrodeposition layer with a thickness of 1.2 μm on the exposed stainless steel surface of the support sheet, and this electrodeposition layer was transferred. A support substrate having a fine pattern 10 was used. Prior to vacuum attachment to the chuck table, a vinyl acetate-based adhesive solution was applied to the entire surface of the support substrate on the pattern-forming side so that the film thickness was 1.2 μm.

蚕用底・硫酸ニンケル    250g/j!・塩化ニ
ッケル     45g/l ・ホウ酸        30g/l !1条作・・・PH:4.5、温度:50°C2電流密
度:5A/dI11” 一方、被加工物としてシリコンの被加工物基材に厚ざ0
.1μのa−3i膜を成膜したものを使用し、該成膜面
側に後述のエツチング処理を行なうためのフォトレジス
ト(東京応化製: 0FPR)を膜厚が1.5μmとな
るように塗布した。上記被加工物は成膜部分を最終的に
加工するものであり、ホルダー本体に吸着させるときは
該成膜面を下向きにして吸着させる。
Sole for silkworms/Ninkel sulfate 250g/j!・Nickel chloride 45g/l ・Boric acid 30g/l! Single-row production...PH: 4.5, temperature: 50°C2 current density: 5A/dI11" On the other hand, as a workpiece, a silicon workpiece base material with a thickness of 0
.. A 1 μm a-3i film was used, and a photoresist (0FPR manufactured by Tokyo Ohka Chemical Co., Ltd.) was applied to the film-formed side to a thickness of 1.5 μm for the etching process described below. did. The film-formed part of the workpiece is finally processed, and when it is adsorbed onto the holder main body, the film-formed surface thereof faces downward.

上述の本発明装置による転写を完了した後の被加工物は
、微細パターンである電着層側から紫外線の照射を行い
、これにより二、ケル電着層が紫外線を遮断するためポ
ジ型のフォトレジスト膜が現像され、現像絆了後、酸素
5%含有のCF4ガスを用いてドライエツチングを行い
、最後に常法にてレジスト膜、粘着層及び電着層を除去
して加工することができる。その結果、転写用微細パタ
ーンに相応した線幅10μの画線パターンが被加工物に
加工形成される。
After the transfer by the apparatus of the present invention described above is completed, the workpiece is irradiated with ultraviolet rays from the side of the electrodeposited layer, which is a fine pattern. After the resist film is developed and the development is complete, dry etching is performed using CF4 gas containing 5% oxygen, and finally the resist film, adhesive layer, and electrodeposited layer can be removed and processed using a conventional method. . As a result, a line pattern with a line width of 10 μm corresponding to the fine pattern for transfer is formed on the workpiece.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明装置は前記の如き構成から
なるため転写用の微細パターンを支持基板から被加工物
に正確且つ鮮明に、しかも効率的且つ安価に転写形成す
ることができる。また本発明装置によれば転写用微細パ
ターン(換言すれば支持基板)と被加工物を平行状態に
して転写を行なうため、該パターンが転写後に被加工物
上において正確に復元し、これにより正確で鮮明な精度
のよい転写がなされる。ここで上記の如き微細パターン
を印刷手段にて被加工物に形成しようとすると、従来の
印刷法では印刷版へのインキングが、粘性インキを画線
部へ擦りつけるようにしてインキングするため粘性材料
であるインキに圧着力、摺動力、引張力等の物理的力が
複雑に作用し、画線部への正確なインキングがなされず
、その結果忠実な微細パターンの印刷形成もできない。
As explained above, since the apparatus of the present invention has the above-described configuration, it is possible to accurately and clearly transfer and form a fine pattern for transfer from a support substrate to a workpiece, efficiently and at low cost. Furthermore, according to the apparatus of the present invention, since the fine pattern for transfer (in other words, the supporting substrate) and the workpiece are transferred in a parallel state, the pattern is accurately restored on the workpiece after the transfer, and thereby the pattern can be accurately restored. A clear and accurate transfer is made. When attempting to form a fine pattern such as the one described above on a workpiece using printing means, in conventional printing methods, inking on the printing plate is done by rubbing viscous ink onto the image area. Physical forces such as pressure force, sliding force, and tensile force act on the ink, which is a viscous material, in a complex manner, making it impossible to ink the printed area accurately and, as a result, unable to print a faithful fine pattern.

そこで本発明者は画線部への忠実なインキングを行なう
条件が上記物理的力を廃し完全に静的にインキングする
点にあると着目し、その目的を達成するため本発明では
転写用パターンと被加工物を平行に配した状態で転写を
行なうよう構成したことにより高精度な微細パターンの
転写形成が可能となった。
Therefore, the inventor of the present invention has focused on the fact that the condition for performing faithful inking on the image area is to eliminate the above-mentioned physical force and perform completely static inking. By arranging the transfer so that the pattern and the workpiece are arranged in parallel, it is possible to transfer and form a fine pattern with high precision.

また本発明装置は、アライメント機構が前記の如き映像
検出部とアライメント用駆動部からなるものである場合
、支持基板と被加工物の位置関係をモニターしながら駆
動部の操作により正確且つ確実に位置合わせすることが
でき、しかも前記アライメント用マークを利用すればよ
り一層正確で高精度な微細パターンの転写を行なうこと
ができる。
Furthermore, in the case where the alignment mechanism is composed of the image detection section and the alignment drive section as described above, the apparatus of the present invention can accurately and reliably position the workpiece by operating the drive section while monitoring the positional relationship between the support substrate and the workpiece. Furthermore, by using the alignment mark, it is possible to transfer a fine pattern with even more accuracy and precision.

本発明装置は上述の如く微細パターンを高精度で量産的
に転写することができるため前記の薄膜トラシジスタ、
プリント基板等のような機能性被加工物における微細パ
ターンの転写形成時に使用するのが最適であるが、その
他にカラフィルターマイクロマシーンニング等の分野で
も充分活用することができる。
As described above, the apparatus of the present invention is capable of transferring fine patterns in mass production with high precision.
Although it is most suitable for use in transferring and forming fine patterns on functional workpieces such as printed circuit boards, it can also be fully utilized in other fields such as color filter micromachining.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明転写装置の一例を示す概略図、第2図は
本発明装置によるアライメント工程の状態を示す要部説
明図、第3図(a)〜(C)は本発明装置による転写工
程を説明するための概略断面図である。 1・・・ホルダー部     2・・・チャンク台部3
・・・アライメント機構  4・・・圧着機構5・・・
剥離機構      7・・・被加工物lO・・・転写
用微細パターン 13・・・映像検出部 16・・・顕微鏡 18・・・電子ライン発生器 21、.21..21θ・・・ステ 25・・・粘着層 11・・・支持基板 15・・・ビデオカメラ 17・・・落射照明具 19・・・テレビモニター ソピングモータ 10・・・転写用微細パターン 16・・・顕微鏡
Fig. 1 is a schematic diagram showing an example of the transfer device of the present invention, Fig. 2 is an explanatory diagram of the main part showing the state of the alignment process by the device of the present invention, and Figs. 3 (a) to (C) are transfer by the device of the present invention. It is a schematic sectional view for explaining a process. 1...Holder part 2...Chunk base part 3
...Alignment mechanism 4...Crimp mechanism 5...
Peeling mechanism 7...Workpiece lO...Fine pattern for transfer 13...Image detection unit 16...Microscope 18...Electron line generator 21, . 21. .. 21θ...Station 25...Adhesive layer 11...Support substrate 15...Video camera 17...Epi-illumination device 19...TV monitor soaping motor 10...Fine pattern for transfer 16... ·microscope

Claims (3)

【特許請求の範囲】[Claims] (1)支持基板に形成した所望形状の転写用微細パター
ンを該基板から被加工物に、該基板側又は被加工物側に
塗布形成する粘着層を介して転写させる転写装置であっ
て、被加工物を真空吸着させるホルダー部と、該ホルダ
ー部と平行に対向して設置される、微細パターンを形成
した支持基板を真空吸着させるチャック台部と、支持基
板と被加工物とをギャップを持たせた状態で位置合わせ
した後に両者を密着させるアライメント機構と、密着し
た支持基板と被加工物を所定時間圧着させる圧力密着方
式或いは真空密着方式からなる圧着機構と、圧着後の支
持基板と被加工物を剥離させる機構を備えていることを
特徴とする微細パターンの転写装置。
(1) A transfer device that transfers a fine transfer pattern of a desired shape formed on a support substrate from the substrate to a workpiece via an adhesive layer coated on the substrate side or the workpiece side, A holder part that vacuum-chucks the workpiece, a chuck base part that is installed parallel to and opposite to the holder part and vacuum-chucks a support substrate on which a fine pattern has been formed, and a gap between the support substrate and the workpiece. an alignment mechanism that brings the two into close contact after alignment in a state where the support substrate and the workpiece are in close contact with each other; a pressure bonding mechanism that uses a pressure contact method or a vacuum contact method that presses the support substrate and the workpiece in close contact for a predetermined period of time; A fine pattern transfer device characterized by being equipped with a mechanism for peeling off objects.
(2)アライメント機構が、ビデオカメラ、顕微鏡、落
射照明具、電子ライン発生器及びテレビモニターからな
る映像検出部と、チャック台をパルスモータで前後、左
右及び回転方向に移動させるアライメント用駆動部とか
らなる請求項1記載の微細パターンの転写装置。
(2) The alignment mechanism includes an image detection unit consisting of a video camera, a microscope, an epi-illumination device, an electronic line generator, and a television monitor, and an alignment drive unit that moves the chuck table back and forth, left and right, and in rotational directions using a pulse motor. 2. The fine pattern transfer device according to claim 1, comprising:
(3)アラインメント機構が、支持基板と被加工物に予
めそれぞれ設けたアライメント用マークを利用して位置
合わせを行う機構である請求項1又は2記載の微細パタ
ーンの転写方法。
(3) The fine pattern transfer method according to claim 1 or 2, wherein the alignment mechanism is a mechanism that performs positioning using alignment marks provided in advance on the support substrate and the workpiece.
JP2165458A 1990-06-22 1990-06-22 Fine pattern transfer device Expired - Lifetime JP2986856B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2165458A JP2986856B2 (en) 1990-06-22 1990-06-22 Fine pattern transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2165458A JP2986856B2 (en) 1990-06-22 1990-06-22 Fine pattern transfer device

Publications (2)

Publication Number Publication Date
JPH0456826A true JPH0456826A (en) 1992-02-24
JP2986856B2 JP2986856B2 (en) 1999-12-06

Family

ID=15812803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2165458A Expired - Lifetime JP2986856B2 (en) 1990-06-22 1990-06-22 Fine pattern transfer device

Country Status (1)

Country Link
JP (1) JP2986856B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007239381A (en) * 2006-03-10 2007-09-20 Press Kogyo Co Ltd Snow melting roof tiles and snow melting roof structure
CN104070780A (en) * 2013-03-28 2014-10-01 大日本网屏制造株式会社 Transfer apparatus and transfer method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007239381A (en) * 2006-03-10 2007-09-20 Press Kogyo Co Ltd Snow melting roof tiles and snow melting roof structure
CN104070780A (en) * 2013-03-28 2014-10-01 大日本网屏制造株式会社 Transfer apparatus and transfer method

Also Published As

Publication number Publication date
JP2986856B2 (en) 1999-12-06

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