JPH045636U - - Google Patents
Info
- Publication number
- JPH045636U JPH045636U JP4638890U JP4638890U JPH045636U JP H045636 U JPH045636 U JP H045636U JP 4638890 U JP4638890 U JP 4638890U JP 4638890 U JP4638890 U JP 4638890U JP H045636 U JPH045636 U JP H045636U
- Authority
- JP
- Japan
- Prior art keywords
- susceptors
- cvd
- boat
- supplied
- power source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 1
Description
第１図はこの考案の一実施例であるプラズマＣ
ＶＤ装置のボート部分を略図化して示す断面図、
第２図及び第３図は第１図に示す装置で使用され
るボートの正面図及び底面図である。第４図は従
来のプラズマＣＶＤ装置のボート部分を簡略化し
て示す断面図、第５図は連結されるサセプタを示
す斜視図、第６図及び第７図は第５図に示す装置
で使用されるボートの正面図及びＡ−Ａ線断面図
である。
１……ＣＶＤ炉、５……半導体ウエーハ、６…
…サセプタ、６ａ，６ｂ，６ｃ……サセプタのブ
ロツク、９，１０……ボートの端板、１１，１２
……サポート、１３……高周波電源、２０……プ
ラズマＣＶＤ装置、２１……ボート、２２Ｒ，２
２Ｌ，２３Ｒ，２３Ｌ，２４Ｒ，２４Ｌ……給電
源、２５Ｒ，２５Ｌ，２６Ｒ，２６Ｌ……電圧降
下素子。
Figure 1 shows a plasma C which is an embodiment of this invention.
A sectional view schematically showing a boat part of the VD device,
2 and 3 are front and bottom views of a boat used in the apparatus shown in FIG. 1. FIG. 4 is a simplified cross-sectional view of the boat part of a conventional plasma CVD apparatus, FIG. 5 is a perspective view of a connected susceptor, and FIGS. 6 and 7 are used in the apparatus shown in FIG. They are a front view and a sectional view taken along the line A-A of the boat. 1...CVD furnace, 5...semiconductor wafer, 6...
...Susceptor, 6a, 6b, 6c...Susceptor block, 9, 10...Boat end plate, 11, 12
... Support, 13 ... High frequency power supply, 20 ... Plasma CVD equipment, 21 ... Boat, 22R, 2
2L, 23R, 23L, 24R, 24L... power supply, 25R, 25L, 26R, 26L... voltage drop element.
Claims (1)
、多数枚のサセプタを所定間隔を保つて平行に立
てた状態で連結したボートを挿入し、サセプタの
連結方向に配線した給電線によつて隣接するサセ
プタ間に高周波電圧を加え、サセプタ間に発生し
たＣＶＤガスのプラズマによつて、サセプタの対
向面に保持した半導体ウエーハの表面にＣＶＤ膜
を成長させるプラズマＣＶＤ装置において、 サセプタを連結方向に沿つて電気的に数ブロツ
クに分割し、各ブロツクに共通の電源から異なる
給電線によつて高周波電力を給電し、電源に近い
ブロツクの給電線ほど大きいインピーダンスを持
つ電圧降下素子を挿入接続したことを特徴とする
プラズマＣＶＤ装置。[Claim for Utility Model Registration] A boat in which a number of susceptors are connected in parallel with a predetermined interval is inserted into a horizontal CVD furnace to which CVD gas is supplied, and a boat is inserted in the direction in which the susceptors are connected. A plasma CVD device that applies a high frequency voltage between adjacent susceptors via wired power supply lines, and uses CVD gas plasma generated between the susceptors to grow a CVD film on the surface of a semiconductor wafer held on the opposite surface of the susceptors. In this method, the susceptor is electrically divided into several blocks along the connection direction, and high-frequency power is supplied to each block from a common power source through different feeder lines, and the feeder line of the block closer to the power source has a voltage with a larger impedance. A plasma CVD apparatus characterized in that a drop element is inserted and connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4638890U JPH045636U (en) | 1990-04-27 | 1990-04-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4638890U JPH045636U (en) | 1990-04-27 | 1990-04-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH045636U true JPH045636U (en) | 1992-01-20 |
Family
ID=31561432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4638890U Pending JPH045636U (en) | 1990-04-27 | 1990-04-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH045636U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0289599A (en) * | 1988-09-27 | 1990-03-29 | Idea Res:Kk | Method for strengthening metal material or synthetic resin material or the like |
| JP2013251367A (en) * | 2012-05-31 | 2013-12-12 | Shimadzu Corp | Plasma cvd deposition apparatus |
-
1990
- 1990-04-27 JP JP4638890U patent/JPH045636U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0289599A (en) * | 1988-09-27 | 1990-03-29 | Idea Res:Kk | Method for strengthening metal material or synthetic resin material or the like |
| JP2013251367A (en) * | 2012-05-31 | 2013-12-12 | Shimadzu Corp | Plasma cvd deposition apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1329638C (en) | Machine unit having retaining device using static electricity | |
| TW480595B (en) | Vacuum processing apparatus | |
| JPH045636U (en) | ||
| KR20010030355A (en) | Plasma apparatus and plasma cvd film formation method | |
| JP4238643B2 (en) | Electrode support structure for thin film forming equipment | |
| KR100313415B1 (en) | Metal shadowmask supporting device using magentic force for vacuum deposition | |
| JP3868217B2 (en) | Plasma processing equipment | |
| TWI287044B (en) | CVD device | |
| JPS6413119U (en) | ||
| JPS6026098Y2 (en) | Internal electrode structure of plasma polymerization equipment | |
| JPH06283439A (en) | Substrate holder and plasma treatment device | |
| JPS60224215A (en) | Plasma vapor-phase reactor | |
| US1253103A (en) | Spark-gap for the production of powerful electrical oscillations. | |
| JPS6475680A (en) | Plasma cvd device | |
| JPH0561350B2 (en) | ||
| JPH0160528U (en) | ||
| JPS637160U (en) | ||
| JPH0120556B2 (en) | ||
| JPS58158438U (en) | Coil holding device for epitaxial growth equipment | |
| JPH0629216A (en) | Vertical-type epitaxial growth apparatus | |
| JP2600478Y2 (en) | Plasma CVD equipment | |
| JPS6445162U (en) | ||
| JPH01246368A (en) | Plasma cvd apparatus | |
| JP2006156123A (en) | Plasma treatment apparatus | |
| JPS6230599U (en) |