JPH0453836B2 - - Google Patents
Info
- Publication number
- JPH0453836B2 JPH0453836B2 JP13978886A JP13978886A JPH0453836B2 JP H0453836 B2 JPH0453836 B2 JP H0453836B2 JP 13978886 A JP13978886 A JP 13978886A JP 13978886 A JP13978886 A JP 13978886A JP H0453836 B2 JPH0453836 B2 JP H0453836B2
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- nitride ceramics
- aln
- silicon oxide
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Ceramic Products (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13978886A JPS62297286A (ja) | 1986-06-16 | 1986-06-16 | 窒化アルミニウムセラミツクスのメタライズ方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13978886A JPS62297286A (ja) | 1986-06-16 | 1986-06-16 | 窒化アルミニウムセラミツクスのメタライズ方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62297286A JPS62297286A (ja) | 1987-12-24 |
JPH0453836B2 true JPH0453836B2 (enrdf_load_stackoverflow) | 1992-08-27 |
Family
ID=15253440
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13978886A Granted JPS62297286A (ja) | 1986-06-16 | 1986-06-16 | 窒化アルミニウムセラミツクスのメタライズ方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62297286A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2537653B2 (ja) * | 1988-02-12 | 1996-09-25 | 株式会社日立製作所 | 窒化アルミニウム基板と製法及び半導体装置 |
-
1986
- 1986-06-16 JP JP13978886A patent/JPS62297286A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS62297286A (ja) | 1987-12-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0153737B1 (en) | Circuit substrate having high thermal conductivity | |
EP0097058B1 (en) | Sic sintered body having metallized layer and production method therefor | |
KR910006948B1 (ko) | 질화 알루미늄 세라믹스 위에 형성된 금속박막층 구조물 및 그의 생산방법 | |
KR900005842B1 (ko) | 질화 알루미늄 기판 | |
US6485816B2 (en) | Laminated radiation member, power semiconductor apparatus, and method for producing the same | |
JPH09315876A (ja) | 金属−セラミックス複合基板及びその製造法 | |
JP2578283B2 (ja) | 窒化アルミニウム基板のメタライズ方法 | |
JPH0453836B2 (enrdf_load_stackoverflow) | ||
EP0214465B1 (en) | Plating process for an electronic part | |
JPS62182182A (ja) | 金属化面を有する窒化アルミニウム焼結体 | |
JP3723350B2 (ja) | 配線基板およびその製造方法 | |
JP3420424B2 (ja) | 配線基板 | |
JPH0455153B2 (enrdf_load_stackoverflow) | ||
JPH0238557B2 (enrdf_load_stackoverflow) | ||
JPS5961054A (ja) | 半導体装置 | |
JPH0585869A (ja) | 窒化アルミニウムセラミツクスの表面処理方法 | |
JPH0454378B2 (enrdf_load_stackoverflow) | ||
JP2537653B2 (ja) | 窒化アルミニウム基板と製法及び半導体装置 | |
JPH04290488A (ja) | 非酸化物系セラミックス回路基板の製法および該基板を用いた電子装置の製法 | |
JPH07172961A (ja) | メタライズ層を有する窒化アルミニウム焼結体及びその製造方法 | |
JPS61281074A (ja) | メタライズ用高熱伝導性窒化アルミニウム焼結体 | |
JPS6184089A (ja) | 高熱伝導性回路基板 | |
JPS61270286A (ja) | 炭化ケイ素セラミツクス部材及びその製造方法 | |
JPS6217091A (ja) | 窒化アルミニウム体の金属化方法 | |
JPS60198893A (ja) | ピン付き多層セラミツク基板の製造方法 |