JPH0448754A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH0448754A JPH0448754A JP2157852A JP15785290A JPH0448754A JP H0448754 A JPH0448754 A JP H0448754A JP 2157852 A JP2157852 A JP 2157852A JP 15785290 A JP15785290 A JP 15785290A JP H0448754 A JPH0448754 A JP H0448754A
- Authority
- JP
- Japan
- Prior art keywords
- marking
- semiconductor device
- resin
- marked
- ground
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000011347 resin Substances 0.000 claims abstract description 23
- 229920005989 resin Polymers 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000007789 sealing Methods 0.000 claims abstract description 14
- 230000002950 deficient Effects 0.000 claims description 10
- 238000000227 grinding Methods 0.000 abstract description 10
- 238000007689 inspection Methods 0.000 abstract description 3
- 238000005498 polishing Methods 0.000 abstract description 3
- 238000001035 drying Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体装置の製造方法、特にマーキングに
関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for manufacturing a semiconductor device, and particularly to marking.
通常、半導体装置の製造工程においては、半導体装置の
品種、特性値、製造年月日、およぎ商標を表示するマー
キングが行なわｎる。このマーキング方法としては、樹
脂系のインクで捺印する方法と、レーザ光を照射し、封
止樹脂表面を燃焼。Normally, in the manufacturing process of semiconductor devices, markings are performed to indicate the type, characteristic values, date of manufacture, and trademark of the semiconductor device. This marking method involves stamping with resin-based ink and irradiating laser light to burn the surface of the sealing resin.
炭化させる方法がある。There is a way to carbonize it.
レーザ光の照射によるマーキング方法でマーキングさｎ
た半導体装置は、第５図に示す様に、半導体装置を封止
した封止樹脂（１）の所定の表面に文字や記呼となる部
分をレーザ光を照射して燃焼、炭化させる為、マーキン
グ部の断面はくぼみ（３）となっている。Marking is done using a marking method using laser light irradiation.
As shown in FIG. 5, the semiconductor device is manufactured by irradiating a laser beam onto a predetermined surface of the sealing resin (1) that seals the semiconductor device to burn and carbonize the parts that will be used as letters or names. The cross section of the marking part is a depression (3).
なお、図中（２）は外部リードである。Note that (2) in the figure is an external lead.
次に動作について説明する。上記第５図のようにマーキ
ングが施さｎた半導体装置は、外観検査工程で、マーキ
ングの内容等が検査さｎ１良品と不良品に区別さｎ１マ
ーキング不良とさｎｅｔものは廃却処分さｎる。Next, the operation will be explained. Semiconductor devices marked with markings as shown in Figure 5 above are inspected for the content of the markings during the external inspection process, and are classified into non-defective and defective products.Those with defective markings are disposed of. .
従来の半導体装置の製造方法におけるマーキング方法は
以上の様に行わｎているので、１度マーキングさｎた文
字の修正ができず、マーキング不良となった半導体装置
の救済ができないなどの問題があった。Since the marking method in the conventional semiconductor device manufacturing method is performed as described above, there are problems such as it is not possible to correct the characters once marked, and it is not possible to repair a semiconductor device with defective marking. Ta.
この発明は上記のような問題点を解消するためになさｎ
たもので、マーキング不良となった半導体装置に、再び
マーキングを施すことができるようにした半導体装置の
製造方法を得ることを目的とする。This invention was made to solve the above problems.
It is an object of the present invention to provide a method for manufacturing a semiconductor device that allows marking to be performed again on a semiconductor device that has undergone marking defects.
この発明に係る半導体装置の製造方法は、マーキング不
良部分を研滓機で、封止樹脂を研削した後その研創部に
封止樹脂と同系絖の樹脂で肉盛りするようにしたもので
ある。In the method for manufacturing a semiconductor device according to the present invention, after the sealing resin is ground on the defective marking portion using a grinding machine, the ground portion is filled with resin of the same type as the sealing resin.
この発明における半導体装置の製造方法は、マーキング
面を研滓し、その上に樹脂を塗付し、再マーク可能とし
たのでマーキン工程での製品歩留が向とする。In the method of manufacturing a semiconductor device according to the present invention, the marking surface is ground and a resin is applied thereon to enable re-marking, which improves the product yield in the marking process.
以下に、この発明の一実施例を図に゛りいて説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図はこの発明の一実施例による半導体装置の製造方
法を示す工程経路図、第２図〜第４図は工程図である。FIG. 1 is a process route diagram showing a method for manufacturing a semiconductor device according to an embodiment of the present invention, and FIGS. 2 to 4 are process diagrams.
図において、（２）は半導体装置を封止した封止樹脂、
（２）は外部リード、〈３）はマーキングによるくぼみ
、（４）は研 ローラ、（６）は研削さｎた部分、（６
）は塗付によって肉盛りされ九ｍ詣である。In the figure, (2) is a sealing resin that seals a semiconductor device;
(2) is the external lead, (3) is the indentation by marking, (4) is the grinding roller, (6) is the ground part, (6
) is 9m long and has been painted over.
次に動作に°りいて説明する。Next, we will explain the operation.
レーザ光によりマーキングは、従来と同様に行わｎるが
、その工程で誤アークさｎたものは、検査によってマー
キング不良と判定さｎろと、第２図に示すように、その
レーザ光によりくぼんだ文字断面（３）の深さ（約１０
μｍ程度）を、研 ローラ（５）により封止樹脂表面を
研削する。マーキング不良部分が第３図に示すように完
全に研削さｎると、その研削量と同程度、封止樹脂と同
様の樹脂（６）を塗付、乾燥させながら肉盛りした後再
マーキングをする。Marking with a laser beam is performed in the same way as before, but if there is an erroneous arc in the process, it will be determined by inspection that the marking is defective, and as shown in Figure 2, the laser beam will cause a dent. Depth of cross section (3) (approximately 10
µm) on the surface of the sealing resin using a grinding roller (5). When the defective marking area is completely ground as shown in Figure 3, apply the same amount of resin (6) as the sealing resin to the same amount as the amount of grinding, build up the area while drying, and then remark. do.
上記実施例においては、研削後樹脂（６）を塗付してか
ら再度マーキングを実施したが、研削した後、直に再マ
ーキングを実施しても良い。In the above embodiment, the resin (6) was applied after grinding and then marking was performed again, but re-marking may be performed immediately after grinding.
また、上記実施例においては、マーキング不良部を研
ローラで研削するようにしたが、研 ローラ以外の手段
で研削することも可能である。In addition, in the above embodiment, the marking defects are polished.
Although we used a roller for grinding, it is also possible to use other means than a grinding roller.
以上のように、この発明によれば、マーク面上を研滓し
間層を塗付することによりマーキング不良となったもの
を再マーク可能としたので、誤マークによる製品不良が
無くなり、製品良品率を向上する効果がある。As described above, according to the present invention, it is possible to remark defective markings by sanding the mark surface and applying an interlayer, thereby eliminating product defects due to incorrect markings and producing non-defective products. This has the effect of improving the rate.
第１図〜第３図は、この発明の一実施例を示すもので、
第１図は、レーザ光によりくぼんだ文字断面を研滓して
いる概略図、第２図は、研滓を完了した時の半導体装置
の断面概略図、第３図は、研滓部分に樹脂を塗付した後
の概略図、第４図は、レーザ光によりマーキングされた
半導体装置の概略図、第５図は従来の製造方法による半
導体装置の断面図概略図である。
（１）は、封止樹脂、（２）は、外部リード （３）は
、レーザ光によりくぼんだ文字断面 （４）は研滓ロー
ラ（５）は、研滓さｒ、九部分を示し （６）は、塗付
し＋樹脂を示す。
第１図
第２図
４ 研序ローラFigures 1 to 3 show an embodiment of this invention.
Figure 1 is a schematic diagram of a cross-section of a concave character being polished by a laser beam, Figure 2 is a schematic cross-sectional diagram of a semiconductor device after polishing is completed, and Figure 3 is a schematic diagram of a semiconductor device with resin applied to the polishing part. FIG. 4 is a schematic diagram of a semiconductor device marked with a laser beam, and FIG. 5 is a schematic cross-sectional diagram of a semiconductor device manufactured by a conventional manufacturing method. (1) is the sealing resin, (2) is the external lead, (3) is the cross section of the character depressed by the laser beam, (4) is the abrasive roller, (5) is the abrasive part, and ( 6) indicates coating + resin. Figure 1 Figure 2 Figure 4 Kensho roller
Claims (1)
ーキングする方法において、マーキング不良の半導体装
置の封止樹脂のマーキング部を所定の厚さ研削し、上記
研削した面に、再度マーキングすることを特徴とする半
導体装置の製造方法。In a method of marking the surface of a sealing resin that seals a semiconductor device with a laser beam, the marking part of the sealing resin of the semiconductor device with defective marking is ground to a predetermined thickness, and the ground surface is marked again. A method for manufacturing a semiconductor device, characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2157852A JPH0448754A (en) | 1990-06-15 | 1990-06-15 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2157852A JPH0448754A (en) | 1990-06-15 | 1990-06-15 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0448754A true JPH0448754A (en) | 1992-02-18 |
Family
ID=15658781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2157852A Pending JPH0448754A (en) | 1990-06-15 | 1990-06-15 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0448754A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5461539A (en) * | 1992-12-28 | 1995-10-24 | Rohm Co., Ltd. | Heat sensitive electronic component |
| JP2005203696A (en) * | 2004-01-19 | 2005-07-28 | Casio Micronics Co Ltd | Semiconductor device, apparatus for manufacturing the same, and marking method thereof |
-
1990
- 1990-06-15 JP JP2157852A patent/JPH0448754A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5461539A (en) * | 1992-12-28 | 1995-10-24 | Rohm Co., Ltd. | Heat sensitive electronic component |
| JP2005203696A (en) * | 2004-01-19 | 2005-07-28 | Casio Micronics Co Ltd | Semiconductor device, apparatus for manufacturing the same, and marking method thereof |
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