JPH0448505A - Dielectric porcelain composition - Google Patents
Dielectric porcelain compositionInfo
- Publication number
- JPH0448505A JPH0448505A JP2155054A JP15505490A JPH0448505A JP H0448505 A JPH0448505 A JP H0448505A JP 2155054 A JP2155054 A JP 2155054A JP 15505490 A JP15505490 A JP 15505490A JP H0448505 A JPH0448505 A JP H0448505A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- temperature
- pbo
- composition
- porcelain composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 21
- 229910052573 porcelain Inorganic materials 0.000 title abstract description 6
- 239000000919 ceramic Substances 0.000 claims description 7
- 238000005245 sintering Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 2
- 229910019653 Mg1/3Nb2/3 Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 description 6
- 238000010304 firing Methods 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- -1 1085° C. Substances 0.000 description 1
- 238000007088 Archimedes method Methods 0.000 description 1
- 229910003781 PbTiO3 Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910000812 Ra alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ZZFHCROGYNMKTR-UHFFFAOYSA-N [Ag].[Ra] Chemical compound [Ag].[Ra] ZZFHCROGYNMKTR-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はコンデンサの材料として用いられ、比誘電率が
高く、比誘電率の温度特性が良好で、しかも低温で焼結
できる誘電体磁器組成物に関するものである。Detailed Description of the Invention Field of the Invention The present invention relates to a dielectric ceramic composition that is used as a material for capacitors, has a high dielectric constant, good temperature characteristics of the dielectric constant, and can be sintered at low temperatures. It is something.
従来の技術
従来より、高説電率系磁器コンデンサの材料としては、
ＢａＴｉＯ３を主成分とした誘電体磁器組成物が用い
られている。これは、室温での比誘電率が２０００〜１
５０００ と高い材料であるが、焼成温度が１３００〜
１４００℃と高温であった。このため、焼成コストが高
くつく上、積層磁器コンデンサにおいては、生の磁器シ
ートの上に電極をあらかじめ形成したものを複数枚積層
してから焼成するので、その電極材料としでは、１３０
０℃以上の高温においても溶融したり、酸化したり、誘
電体と反応したりしないような貴金属１例えば白金やパ
ラジウムやそれらを含む合金などを用いなければならな
かった。それゆえ、銀、ニッケル、銅などの安価な金属
を内部電極として使用できるような低温で焼結する誘電
体磁器組成物が望まれていた。このような要請を満足す
る組成物として。Conventional technology Traditionally, materials for high conductivity ceramic capacitors include:
A dielectric ceramic composition containing BaTiO3 as a main component is used. This has a dielectric constant of 2000 to 1 at room temperature.
Although it is a high material at 5000 yen, the firing temperature is 1300 yen ~
The temperature was 1400°C. For this reason, the firing cost is high, and in the case of multilayer porcelain capacitors, electrodes are formed on raw porcelain sheets in advance and are laminated and then fired, so the electrode material is
It is necessary to use noble metals 1, such as platinum, palladium, and alloys containing them, which do not melt, oxidize, or react with dielectrics even at high temperatures of 0° C. or higher. Therefore, there has been a desire for a dielectric ceramic composition that can be sintered at a low temperature so that inexpensive metals such as silver, nickel, and copper can be used as internal electrodes. A composition that satisfies these demands.
Ｐｂ（Ｎｇｌ、３ Ｎｂ７，３ ）０３−ＰｂＴ ｉ０
３系の材料が提示されている（特公昭６１−５４２７、
特公昭８ｌ−２８６１９） 、これらの組成物は比誘電
率が１４０００〜３００００と高く、誘電損失が小さく
、１１５０℃程度で焼結するものであった。しかし、こ
れらの焼結温度は銀の融点である９６２℃、銅の融点で
ある１０８５℃に比べると十分低いとはいえず、さらに
低温で焼結する材料が望まれていた。Pb(Ngl,3Nb7,3)03-PbT i0
Three types of materials have been proposed (Special Publication No. 61-5427,
(Japanese Patent Publication No. 81-28619), these compositions had a high dielectric constant of 14,000 to 30,000, low dielectric loss, and could be sintered at about 1,150°C. However, these sintering temperatures are not sufficiently lower than the melting point of silver, 962° C., and the melting point of copper, 1085° C., and materials that can be sintered at even lower temperatures have been desired.
マタ、Ｐｂ（ＭｇＬ／３Ｎｂ２／３）０３−ＰｂＴｉ０
３系（７）Ｍ電率の温度変化率は、−２５℃〜８５℃の
範囲−ｔ’２０℃の基準値に対して＋２０％以上または
一６０％以下と大きく、ＪＩＳのＦ特性を満足するのみ
であった。Mata, Pb(MgL/3Nb2/3)03-PbTi0
3 series (7) The temperature change rate of M electrical conductivity is as large as +20% or more or -60% or less relative to the reference value of -t'20°C in the range of -25°C to 85°C, satisfying JIS F characteristics. All I had to do was do it.
発明が解決しようとする課題
Ｐｂ（ＭｇＬ／３Ｎｂ２／３）０３−ＰｂＴｉ０３系＋
７）！電体磁器組成物は焼結温度が高く、誘電率の温度
変化率が大きいという問題点があった９本発明は上記組
成物の優れた誘電特性をできるだけ損なうことなく、焼
結温度が低く、誘電率の温度変化率が良好な誘電体磁器
組成物を提供することを目的とする。Problems to be solved by the invention Pb(MgL/3Nb2/3)03-PbTi03 series +
7)! Electric ceramic compositions have had the problem of high sintering temperatures and large temperature changes in dielectric constant. It is an object of the present invention to provide a dielectric ceramic composition having a good temperature change rate of dielectric constant.
Ｗ１題を解決するための手段
本発明はＰｂＯ１ｊ１１／３Ｎｋ１．）ｔ〜工ＴｉＸ０
３で表され０、Ｏ１≦ｘ≦０．１２である主成分と主成
分に対して０．５〜５．０重量％のＰｂＯと０．５〜５
，０重量％のｗ０３を副成分とする磁器組成物である。Means for solving the W1 problem The present invention provides a method for solving the problem of PbO1j11/3Nk1. ) t ~ engineering TiX0
3 and 0, O1≦x≦0.12, and 0.5 to 5.0% by weight of PbO and 0.5 to 5% by weight relative to the main component.
, 0% by weight of w03 as a subcomponent.
その限定理由を具体的に述べる。The reason for this limitation will be explained in detail.
Ｘが０．０１未満では比誘電率の最大になる温度が低く
なりすぎ、また、Ｘが０．１２を超えると比誘電率の最
大になる温度が高くなりすぎるため、室温付近で高い比
誘電率を得ることができず実用的でない、また、ＰｂＯ
の添加量が５．０重量％を超えると比誘電率の低下が著
しい、 ＰｂＯの添加量が０．５重量％未満では低温焼
結性の効果がほとんど認められない、−０３の添加量が
５．０重量％をこえると焼結時に素地の変形が起きるう
え、比誘電率が低下する。−０３の添加量が０．５重量
％未満では低温焼結性の効果がほとんどが認められない
上、比誘１！率の温度特性の改善効果も小さい。If X is less than 0.01, the temperature at which the relative permittivity reaches its maximum becomes too low, and if X exceeds 0.12, the temperature at which the relative permittivity reaches its maximum becomes too high. PbO
When the amount of PbO added exceeds 5.0% by weight, the relative dielectric constant decreases significantly. When the amount of PbO added is less than 0.5% by weight, there is almost no effect on low temperature sinterability. If it exceeds 5.0% by weight, the base material will be deformed during sintering and the dielectric constant will decrease. If the amount of -03 added is less than 0.5% by weight, almost no effect on low-temperature sinterability is observed, and the relative dielectric strength is 1! The effect of improving the temperature characteristics of the ratio is also small.
作用
Ｐｂ（１’！ｇＬ／３Ｎｂ２／３）＋−ｘＴｉｘｏ：ｓ
で表され０．Ｏ１≦ｘ≦０．１２である主成分系にお
いて、 ＰｂＯとｌ１１０３の副成分を含まない組成物
では１１５０℃以上の焼成温度を必要とするが、ＰｂＯ
と１ｌ１０３の副成分を含む組成物ではＰｂＯと−０３
の間で生じる液相が焼結を促進するため、８００〜１１
５０℃の低温で焼成しても、 ７．５ｇ／ｃｍ３以上焼
結密度を得ることができる。また、ＰｂＯと−０３の副
成分を加えることによって比誘電率の温度特性をＪＩＳ
のＦ特性からＥおよびＤ特性に改善することができる。Effect Pb(1'!gL/3Nb2/3)+-xTixo:s
It is expressed as 0. In the main component system where O1≦x≦0.12, a composition that does not contain the subcomponents of PbO and l1103 requires a firing temperature of 1150°C or higher, but PbO
PbO and -03 in a composition containing subcomponents of and 1l103
The liquid phase generated between 800 and 11 accelerates sintering.
Even when firing at a low temperature of 50°C, a sintered density of 7.5 g/cm3 or more can be obtained. In addition, by adding PbO and -03 subcomponents, the temperature characteristics of the relative dielectric constant can be adjusted according to the JIS standard.
The F characteristics can be improved to E and D characteristics.
実施例
ＰｂＯ、ＭｇＯ、Ｎｂ、０５．〒ｉ０２を所定量秤量し
、エタノールを加えてナイロンポットとジルコニアポー
ルを用いて混合した。乾燥後、８５０℃で仮焼し、 Ｐ
ｂＯおよびＷＯ３を第１表に示した割合で秤量し、エタ
ノールを加えナイロンポットとジルコニアポールを用い
て混合した。混合物を乾燥した後に、ポリビニルアルコ
ールを適量加えて２ ｔ／Ｃｓ２の圧力で直径１０膳■
、厚さ２１層の円板上に成形した。この成形体を蓋付き
のマグネシアの角さやに入れ、第１表の焼結温度で２時
間焼成した。焼結体の密度はアルキメデス法で測定した
。焼結密度７．５１／ａｍ３以上の緻密な焼結体につい
て焼結体を厚さ約１腸層に平行研磨し金をスパッタして
電極として、インピーダンスアナライザで訓電特性の測
定を行った。測定は周波数１ｋＨｚ、電圧ＩＶｒｓｓで
行った。測定結果を第１表に示した。焼結密度が７．５
３／ｃ■ｊ未満の焼結体については誘電特性を測定する
ための加工が困難であったり、測定値の信頼性に欠けた
りするので、測定を°行わなかった。Examples PbO, MgO, Nb, 05. A predetermined amount of i02 was weighed, ethanol was added, and the mixture was mixed using a nylon pot and a zirconia pole. After drying, calcining at 850℃, P
bO and WO3 were weighed in the proportions shown in Table 1, ethanol was added and mixed using a nylon pot and a zirconia pole. After drying the mixture, add an appropriate amount of polyvinyl alcohol and dry it at a pressure of 2 t/Cs2 into 10 pieces in diameter.
, and was molded onto a 21-layer disk. This molded body was placed in a square magnesia sheath with a lid and fired at the sintering temperature shown in Table 1 for 2 hours. The density of the sintered body was measured by the Archimedes method. For a dense sintered body with a sintered density of 7.51/am3 or more, the sintered body was parallel-polished to a thickness of about one layer, and gold was sputtered to serve as an electrode, and the electrical stimulation characteristics were measured using an impedance analyzer. The measurement was performed at a frequency of 1 kHz and a voltage of IVrss. The measurement results are shown in Table 1. Sintered density is 7.5
Measurements were not performed on sintered bodies with a diameter of less than 3/cj because processing for measuring dielectric properties was difficult or the measured values lacked reliability.
発明の効果
本発１１によると、９００〜１１５０℃の焼成温度で、
密度が高く、比誘電率が３０００以上と高く、比誘電率
の温度変化率が良好であり、 ｔａｎδにも優れた新規
な磁器組成物が得られ、積層磁器コンデンサに用いた場
合、内部電極に銀、銀ノくラジウム合金、銅のような低
融点金属の使用が可能となる。Effects of the invention According to the present invention 11, at a firing temperature of 900 to 1150°C,
A new ceramic composition with high density, high relative permittivity of 3000 or more, good temperature change rate of relative permittivity, and excellent tan δ was obtained, and when used in a multilayer ceramic capacitor, it has a high It becomes possible to use low melting point metals such as silver, silver-radium alloys, and copper.
Claims (1)
ｘＴｉ＿ｘＯ＿３で表され、０．０１≦ｘ≦０．１２で
ある主成分組成物と、主成分組成物に対して０．５〜５
．０重量％のＰｂＯと０．５〜５．０重量％のＷＯ＿３
とからなる誘電体磁器組成物。Pb(M_1_/_3Nb_2_/_3)_1_-_
The main component composition is represented by xTi_xO_3 and 0.01≦x≦0.12, and the main component composition is 0.5 to 5
．． 0 wt% PbO and 0.5-5.0 wt% WO_3
A dielectric ceramic composition consisting of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2155054A JPH0448505A (en) | 1990-06-15 | 1990-06-15 | Dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2155054A JPH0448505A (en) | 1990-06-15 | 1990-06-15 | Dielectric porcelain composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0448505A true JPH0448505A (en) | 1992-02-18 |
Family
ID=15597665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2155054A Pending JPH0448505A (en) | 1990-06-15 | 1990-06-15 | Dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0448505A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6916754B2 (en) * | 2000-12-28 | 2005-07-12 | Nippon Soken, Inc. | Dielectric ceramic material and method for producing the same |
-
1990
- 1990-06-15 JP JP2155054A patent/JPH0448505A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6916754B2 (en) * | 2000-12-28 | 2005-07-12 | Nippon Soken, Inc. | Dielectric ceramic material and method for producing the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS63289709A (en) | Nonreducible dielectric ceramic constituent | |
| JPH0448505A (en) | Dielectric porcelain composition | |
| JPS63289707A (en) | Nonreducible dielectric ceramic constituent | |
| JPH028996B2 (en) | ||
| JP3287980B2 (en) | Multilayer capacitors | |
| JPS63289710A (en) | Nonreducible dielectric ceramic constituent | |
| JPH04254470A (en) | Dielectric porcelain composition | |
| JPS6053408B2 (en) | Reduced semiconductor ceramic composition | |
| JP2926827B2 (en) | Dielectric porcelain composition | |
| JPH11340075A (en) | Dielectric cermic composition | |
| JP3263990B2 (en) | Dielectric porcelain composition | |
| JP2700899B2 (en) | Non-reducing dielectric porcelain composition | |
| JP2803320B2 (en) | Dielectric porcelain composition | |
| JP2700900B2 (en) | Non-reducing dielectric porcelain composition | |
| JPS6036371A (en) | Ceramic composition | |
| JPS5935126B2 (en) | High dielectric constant porcelain composition | |
| JPH04368709A (en) | Nonreducing dielectric porcelain composition material | |
| JPS6227025B2 (en) | ||
| JP3468245B2 (en) | Dielectric porcelain composition | |
| JPS6347083B2 (en) | ||
| JPS6050809A (en) | Dielectric porcelain composition | |
| JPS5935127B2 (en) | High dielectric constant magnetic composition | |
| JPH0457632B2 (en) | ||
| JPS6053407B2 (en) | Reduced semiconductor ceramic composition | |
| JP2700900C (en) |