JPH0447923B2 - - Google Patents
Info
- Publication number
- JPH0447923B2 JPH0447923B2 JP11550284A JP11550284A JPH0447923B2 JP H0447923 B2 JPH0447923 B2 JP H0447923B2 JP 11550284 A JP11550284 A JP 11550284A JP 11550284 A JP11550284 A JP 11550284A JP H0447923 B2 JPH0447923 B2 JP H0447923B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- liquid crystal
- crystal display
- nickel
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000007747 plating Methods 0.000 claims description 42
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- 238000000576 coating method Methods 0.000 claims description 28
- 239000004973 liquid crystal related substance Substances 0.000 claims description 26
- 239000011248 coating agent Substances 0.000 claims description 25
- 239000004020 conductor Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 claims description 8
- QDWJUBJKEHXSMT-UHFFFAOYSA-N boranylidynenickel Chemical compound [Ni]#B QDWJUBJKEHXSMT-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 230000004927 fusion Effects 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910018104 Ni-P Inorganic materials 0.000 description 19
- 229910018536 Ni—P Inorganic materials 0.000 description 19
- 238000000034 method Methods 0.000 description 12
- 229910000679 solder Inorganic materials 0.000 description 9
- 238000005476 soldering Methods 0.000 description 6
- 239000003638 chemical reducing agent Substances 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 3
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 3
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 3
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XMGQYMWWDOXHJM-JTQLQIEISA-N (+)-α-limonene Chemical compound CC(=C)[C@@H]1CCC(C)=CC1 XMGQYMWWDOXHJM-JTQLQIEISA-N 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 1
- 229940081974 saccharin Drugs 0.000 description 1
- 235000019204 saccharin Nutrition 0.000 description 1
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- BSVBQGMMJUBVOD-UHFFFAOYSA-N trisodium borate Chemical compound [Na+].[Na+].[Na+].[O-]B([O-])[O-] BSVBQGMMJUBVOD-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
Description
【発明の詳細な説明】
本発明は液晶表示装置に係り、とくに透明導電
膜上の所要部分に金属被膜を形成した液晶表示装
置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a liquid crystal display device, and more particularly to a liquid crystal display device in which a metal coating is formed on a required portion of a transparent conductive film.
酸化イソジウムや酸化スズ等を主成分とする透
明導電膜が、液晶やエレクトロクロミイ等の表示
素子の電極や、太陽電池の電極等として広く用い
られている。この透明導電膜上に半田付けを行つ
たりソケツト類の接続端子として用いる際の、強
度の補強や抵抗値の低減等の目的で、該透明導電
膜上の所要部分に金属被膜を形成することがいし
ばしば行われる。 Transparent conductive films containing isodium oxide, tin oxide, etc. as main components are widely used as electrodes of display elements such as liquid crystals and electrochromies, electrodes of solar cells, and the like. A metal coating is formed on the required portions of the transparent conductive film for the purpose of reinforcing the strength and reducing the resistance value when soldering the film or using it as a connection terminal for sockets. This is often done.
この金属被膜の形成方法として、Ni陽イオン
の原料として硫酸ニツケル又は塩化ニツケルを含
み、次亜リン酸塩を還元剤として含むメツキ液に
て無電解メツキ法により透明電極上にNi−Ｐメ
ツキ被膜を施す方法が一般的に行われている。し
かるに、、次亜リン酸塩によるNi−Ｐメツキ被膜
は、内部応力が大きいため膜厚2500Å近傍に透明
導電膜との密着強度のピークが存在し、それ以上
膜厚を厚くすると密着強度が急に低下するという
欠点を有していた。このため、内部応力を少くす
る目的でメツキ液にサツカリン等の添加剤を加え
る方法も行われているが、この方法ではメツキ後
のNi−Ｐメツキ被膜の経時変化が起り信頼性に
乏しいという欠点があつた。また、密着強度を保
つためにNi−Ｐメツキ被膜の膜厚を2500Å程度
に保つと、メツキ被膜の膜厚が薄いため、半田付
けを施す際に透明導電膜が溶融するいわゆる「半
田喰れ」現象により該メツキ被膜の膜厚が現象
し、ついにはメツキ被膜が消失してしまう場合が
ある。このためメツキ被膜の膜厚はある程度以上
の厚さを確保しなければならない。更に、Ni−
Ｐメツキ被膜は半田に対する濡れ性も悪く半田付
の作業能率が悪いという欠点も有していた。 As a method for forming this metal film, a Ni-P plating film is formed on the transparent electrode by an electroless plating method using a plating solution containing nickel sulfate or nickel chloride as a raw material for Ni cations and hypophosphite as a reducing agent. The method of applying is commonly used. However, because the Ni-P plating film made of hypophosphite has a large internal stress, the adhesion strength to the transparent conductive film peaks around 2500 Å in thickness, and the adhesion strength decreases rapidly when the film thickness is increased beyond that. It had the disadvantage that it decreased to . For this reason, additives such as saccharin are added to the plating solution in order to reduce the internal stress, but this method has the disadvantage that the Ni-P plating film changes over time after plating, resulting in poor reliability. It was hot. In addition, if the thickness of the Ni-P plating film is kept at around 2500 Å to maintain adhesion strength, the thinness of the plating film will cause the transparent conductive film to melt during soldering, resulting in so-called "solder bite". Due to this phenomenon, the thickness of the plating film changes, and the plating film may eventually disappear. For this reason, the thickness of the plating film must be at least a certain level. Furthermore, Ni-
The P plating film also had the disadvantage of poor solder wettability and poor soldering work efficiency.
一方、還元剤として水素化ホウ素ナトリウムを
含むメツキ液を用い、無電解メツキ法で透明導電
膜上にNi−Ｂメツキ被膜を形成する方法も用い
られている。Ni−Ｂメツキ被膜は、Ni−Ｐメツ
キ被膜に比べ内部応力が1/3ないし1/4と低く、抵
抗値も約1/2であり、また、高温でアニーリング
処理を施しても良好な半田濡れ性を示す利点を有
している。しかるに、透明導電膜上にNi−Ｂメ
ツキ被膜を単層で形成した場合には、Ni−Ｐメ
ツキ被膜に比して透明導電膜との間に十分な密着
強度が得られないため、上述の利点にもかかわら
ず実用化されにくかつた。 On the other hand, a method has also been used in which a plating solution containing sodium borohydride as a reducing agent is used to form a Ni--B plating film on a transparent conductive film by an electroless plating method. Compared to Ni-P plating, the Ni-B plating film has a low internal stress of 1/3 to 1/4 and the resistance value is about 1/2, and also has good solderability even after annealing at high temperatures. It has the advantage of exhibiting wettability. However, when a single Ni-B plating film is formed on a transparent conductive film, sufficient adhesion strength cannot be obtained between the transparent conductive film and the Ni-P plating film, so the above-mentioned problems arise. Despite its advantages, it was difficult to put it into practical use.
本発明は、この様な透明導電膜上の所要部分に
金属被膜を形成した従来の導電体の欠点を解消
し、信頼性の高い液晶表示装置を得るためになさ
れたものである。即ち、本発明は、半田喰れ現象
に対しても十分な耐性を有し、透明導電膜に対す
る密着強度も強く、抵抗値が小さく、半田濡れ性
の良い金属被膜を透明導電膜上の所要部分に形成
した導電体を用いた液晶表示装置を提供すること
を目的とする。 The present invention has been made in order to eliminate the drawbacks of conventional conductors in which metal coatings are formed on required portions of such transparent conductive films, and to obtain highly reliable liquid crystal display devices. That is, the present invention provides a metal coating that has sufficient resistance to the solder-eating phenomenon, has strong adhesion strength to the transparent conductive film, has a low resistance value, and has good solder wettability, by applying it to a desired portion on the transparent conductive film. An object of the present invention is to provide a liquid crystal display device using a conductor formed in the above manner.
本発明は、液晶表示装置の基板上の、該液晶表
示装置と駆動回路とを接続する端子部分の上に、
駆動用ICを搭載してなる液晶表示装置において、
該端子部分は、透明導電膜と、該透明導電膜上の
所要部分に形成されたニツケル元素にリン元素が
融合し膜状となつたニツケルリン金属被膜と、該
ニツケルリン金属被膜上に形成されたニツケル元
素にホウ素元素が融合し膜状となつたニツケルホ
ウ素金属被膜とを有する導電体からなることを特
徴とする液晶表示装置である。 The present invention provides, on a substrate of a liquid crystal display device, on a terminal portion connecting the liquid crystal display device and a drive circuit,
In a liquid crystal display device equipped with a driving IC,
The terminal portion includes a transparent conductive film, a nickel phosphorus metal coating formed on a predetermined portion of the transparent conductive film by fusion of phosphorus element with nickel element, and a nickel phosphorus metal coating formed on the nickel phosphorus metal coating. This is a liquid crystal display device characterized in that it is made of a conductor having a nickel-boron metal coating formed by fusing element boron to form a film.
本発明の導電体をさらに詳しく説明する。 The conductor of the present invention will be explained in more detail.
透明導電膜としては酸化インジウムまたは酸化
スズを主成分とする公知の物質を用い、一例とし
ては、インジウムチンオキサイドを用いる。 As the transparent conductive film, a known substance containing indium oxide or tin oxide as a main component is used, and as an example, indium tin oxide is used.
透明導電膜上にNi−Ｐ金属被膜またはNi−Ｂ
金属被膜を形成する方法としては、メツキ法、蒸
着法、スパツタ法、印刷法、エツチング法等のい
ずれの方法を用いてもよいが、形成方法の容易
さ、形成された被膜の密着強度等の特性上無電解
メツキ法が望ましい。 Ni-P metal coating or Ni-B on transparent conductive film
Any method such as plating, vapor deposition, sputtering, printing, etching, etc. may be used to form the metal film, but depending on the ease of the formation method, the adhesion strength of the formed film, etc. Due to its characteristics, electroless plating is preferable.
Ni−Ｐ金属被膜およびNi−Ｂ金属被膜の膜厚
は、内部応力による密着強度特性、半田喰れ現
象、抵抗値等を考慮し、各膜厚を500Åないし
5000Åに形成するのが望ましい。特に、Ni−Ｐ
金属被膜は透明導電膜に対する密着強度が膜厚
2500Å近傍で最大となるため、Ni−Ｐ金属被膜
の膜厚を2500Åとし、該Ni−Ｐ金属被膜の上面
に形成するNi−Ｂ金属被膜の膜厚を、耐半田付
性を考慮し、500Åないし5000Åの範囲内で所望
の膜厚に形成した場合良好な特性が得られる。即
ち、この様な形成した複層被膜はNi−Ｐ単層被
膜を同じ膜厚で形成したものに比べ、半田濡れ性
も良く、密着強度も30％ないし40％高い値が得ら
れる。 The film thickness of the Ni-P metal film and Ni-B metal film is determined by considering adhesion strength characteristics due to internal stress, solder eating phenomenon, resistance value, etc., and the thickness of each film is 500 Å or more.
It is desirable to form the layer with a thickness of 5000 Å. In particular, Ni-P
The adhesion strength of metal coatings to transparent conductive films depends on the film thickness.
Since the maximum value occurs near 2500 Å, the thickness of the Ni-P metal film is set to 2500 Å, and the thickness of the Ni-B metal film formed on the top surface of the Ni-P metal film is set to 500 Å in consideration of solder resistance. Good characteristics can be obtained when the film is formed to a desired thickness within the range of 5000 Å to 5000 Å. That is, the multilayer film formed in this manner has better solder wettability and a 30% to 40% higher adhesion strength than a Ni--P single-layer film of the same thickness.
被膜の抵抗値を特に小さくしたい場合や、IC
等を半田付けする際に該IC等の保護のため半田
付けの際用いるフラツクスにハロゲン物質が定量
しか含まれない弱活性ロジン系のものを使用する
場合には、Ni−Ｂ金属被膜は半田の乗りが悪く
なるため、弱活性ロジン系のフラツクスを用いて
も半田乗りが良く、また抵抗値の小さい金属被膜
をNi−Ｂ金属被膜上に形成するのが望ましい。
この様な金属被膜としては、Cu若しくはAuまた
はAl若しくはIn若しくは錫等の金属をメツキ法、
蒸着法等の被膜形成方法により形成したものを用
いると好ましい結果が得られる。Cu又はAu被膜
をメツキ法で形成する場合には、膜厚を1μｍ以
下として、Ni−Ｂ金属被膜の半田付けを行う部
分上に被膜を形成すれば良い。 When you want to particularly reduce the resistance value of the film, or when using IC
When soldering a weakly active rosin type flux that contains only a small amount of halogen substances to protect the IC, the Ni-B metal coating is Since solderability becomes poor, it is desirable to form a metal film on the Ni--B metal film that has good solderability even when a weakly active rosin-based flux is used and has a low resistance value.
Such metal coatings can be made by plating metals such as Cu, Au, Al, In, or tin.
Preferable results can be obtained by using a film formed by a film forming method such as a vapor deposition method. When forming the Cu or Au film by the plating method, the film thickness may be 1 μm or less, and the film may be formed on the portion of the Ni-B metal film to be soldered.
以下、本発明を実施例に基づき更に詳細に説明
する。 Hereinafter, the present invention will be explained in more detail based on Examples.
実施例
第１図の断面図に示すように、ソーダガラス１
上にインジウムチンオキサイド（ITO）からなる
透明導電膜２を膜厚400Åに形成し、基板３を構
成した。この基板３を前処理としてヘモゾール、
アルカリ洗浄をし、次に触媒処理、活性化処理を
施した後に次亜リン酸塩を還元剤として含む硫酸
ニツケルメツキ溶液を温度80℃に温め、前記基板
３を60秒間該メツキ溶液に浸漬しNi−Ｐメツキ
被膜４を該基板３上の所定位置に2500Åの膜厚で
形成した。その後該基板３を室温乾燥し、更に
200℃で１時間大気中でアニーリング処理を行つ
た。次に第２層目のメツキを施す前処理として該
基板３上のNi−Ｐメツキ被膜４を酸で洗浄し、
還元剤としてホウ素酸ナトリウムを含む硫酸ニツ
ケルメツキ溶液を60℃に温め、該メツキ溶液に前
記基板３を６秒間浸漬し前記Ni−Ｐメツキ被膜
４上に2500Åの膜厚のNi−Ｂメツキ被膜５を形
成した。その後塩化第２鉄溶液で透明導電膜及び
各メツキ被膜を所定のパターンにエツチングし導
電体を形成した。Example As shown in the cross-sectional view of Fig. 1, soda glass 1
A transparent conductive film 2 made of indium tin oxide (ITO) was formed thereon to a thickness of 400 Å to form a substrate 3. This substrate 3 is pretreated with hemosol,
After performing alkaline cleaning, followed by catalytic treatment and activation treatment, a nickel sulfate plating solution containing hypophosphite as a reducing agent was heated to 80°C, and the substrate 3 was immersed in the plating solution for 60 seconds to remove Ni. A -P plating film 4 was formed at a predetermined position on the substrate 3 to a thickness of 2500 Å. After that, the substrate 3 is dried at room temperature, and then
Annealing treatment was performed at 200°C for 1 hour in the air. Next, as a pretreatment for plating the second layer, the Ni-P plating film 4 on the substrate 3 is cleaned with acid,
A nickel sulfate plating solution containing sodium borate as a reducing agent is heated to 60°C, and the substrate 3 is immersed in the plating solution for 6 seconds to form a Ni-B plating film 5 with a thickness of 2500 Å on the Ni-P plating film 4. Formed. Thereafter, the transparent conductive film and each plating film were etched into a predetermined pattern using a ferric chloride solution to form a conductor.
このようにして、Ni−Ｐ、Ni−Ｂ各メツキ被
膜を各々2500Å、総厚5000Åの膜厚で透明導電膜
２上に形成した本実施例の導電体を、本実施例の
Ni−Ｐメツキ被膜を形成したのと同一の方法で
透明導電上に単層のNi−Ｐメツキ被膜を形成し
た導電体と比較すると、半田濡れ性、密着強度と
もに本実施例の導電体のメツキ被膜の方が優れた
特性を示した。特に密着強度については、90°ピ
ール法で本実施例のメツキ被膜が平均で1.0Kg／
２×２mmであつたに比べNi−Ｐ単層被膜は0.5
Kg／２×２mmと1/2の密着強度しか得られなかつ
た。 In this way, the conductor of this example in which Ni-P and Ni-B plating films were formed on the transparent conductive film 2 with a film thickness of 2500 Å each and a total thickness of 5000 Å was used.
Compared to a conductor in which a single layer of Ni-P plating was formed on a transparent conductor using the same method used to form the Ni-P plating, the plating of the conductor of this example showed both solder wettability and adhesion strength. The coating showed better properties. In particular, regarding the adhesion strength, the average plating film of this example was 1.0 kg/
Ni-P single layer coating is 0.5 mm compared to 2 x 2 mm.
The adhesion strength was only 1/2 of Kg/2×2 mm.
本発明では、液晶表示素子の基板上の、その液
晶表示素子と駆動回路とを接続する端子部分に、
上記の本実施例の導電体を用い、かつその上に駆
動用ICを搭載する。 In the present invention, in the terminal portion on the substrate of the liquid crystal display element, which connects the liquid crystal display element and the drive circuit,
The conductor of this embodiment described above is used, and a driving IC is mounted thereon.
以上述べたように、本発明の液晶表示装置の導
電体は透明導電膜上にNi−Ｐ金属被膜とNi−Ｂ
金属被膜とを複層に形成したので、半田喰れ現象
に対して十分な耐性を有し、金属被膜を透明導電
膜に対する密着強度も強く、抵抗値も小さく半田
濡れ性も良く半田付作業の能率も良く、かつ、経
時的にも変化が少ないという効果を有する。従つ
て、同一基板上に例えば液晶表示素子とその駆動
用ICを搭載して透明導電膜を表示用電極と回路
パターン用リードとして共用する場合のように、
透明導電膜上に直接ICのリードやその他の素子
を半田付けし、また透明導電膜を他の機器との接
続用リードとして用いる場合など透明導電膜上に
金属被膜を形成した導電体に半田付性や機械強度
が要求される場合であつても、十分な半田付性や
機械的強度を有する液晶表示装置が得られる。 As described above, the conductor of the liquid crystal display device of the present invention has a Ni-P metal coating and a Ni-B metal coating on a transparent conductive film.
Since the metal coating is formed into a multilayer structure, it has sufficient resistance to the solder-eating phenomenon, and the adhesion strength of the metal coating to the transparent conductive film is strong, and the resistance value is small and the solder wettability is good, making it easy to solder work. It has the effect of good efficiency and little change over time. Therefore, for example, when a liquid crystal display element and its driving IC are mounted on the same substrate and the transparent conductive film is shared as the display electrode and the circuit pattern lead,
When soldering IC leads or other elements directly onto a transparent conductive film, or when using a transparent conductive film as a connection lead for other equipment, soldering to a conductor with a metal coating formed on the transparent conductive film. Even in cases where solderability and mechanical strength are required, a liquid crystal display device having sufficient solderability and mechanical strength can be obtained.
第１図は本発明の一実施例の液晶表示装置に用
いる導電体の断面図である。
１……ソーダガラス、２……透明導電被膜、４
……Ni−Ｐメツキ被膜、５……Ni−Ｂメツキ被
膜
FIG. 1 is a sectional view of a conductor used in a liquid crystal display device according to an embodiment of the present invention. 1... Soda glass, 2... Transparent conductive film, 4
...Ni-P plating film, 5...Ni-B plating film
Claims (1)
駆動回路とを接続する端子部分の上に、駆動用
ICを搭載してなる液晶表示装置において、該端
子部分は、透明導電膜と、該透明導電膜上の所要
部分に形成されたニツケル元素にリン元素が融合
し膜状となつたニツケルリン金属被膜と、該ニツ
ケルリン金属被膜上に形成されたニツケル元素に
ホウ素元素が融合し膜状となつたニツケルホウ素
金属被膜とを有する導電体からなることを特徴と
する液晶表示装置。 ２ ニツケルリン金属被膜はニツケルリンメツキ
被膜である特許請求の範囲第１項記載の液晶表示
装置。 ３ ニツケルホウ素金属被膜はニツケルホウ素メ
ツキ被膜である特許請求の範囲第１項記載の液晶
表示装置。 ４ ニツケルリン金属被膜またはニツケルホウ素
金属被膜のいずれか一方あるいは双方の膜厚は
500Åないし5000Åである特許請求の範囲第１項
〜第３項のいずれか１項記載の液晶表示装置。 ５ 導電体はニツケルホウ素金属被膜上の所要部
分に第３の金属被膜を形成した導電体である特許
請求の範囲第１項記載の液晶表示装置。 ６ 第３の金属被膜は、銅メツキ被膜または金メ
ツキ被膜である特許請求の範囲第５項記載の液晶
表示装置。 ７ 第３の金属被膜は、アルミニウム被膜若しく
はインジウム被膜又は錫被膜である特許請求の範
囲第５項記載の液晶表示装置。 ８ 第３の金属被膜は膜厚が1μｍ以下である特
許請求の範囲第５項〜第７項のいずれか１項記載
の液晶表示装置。[Claims] 1. On the substrate of the liquid crystal display element, on the terminal portion connecting the liquid crystal display element and the drive circuit, a driving circuit is provided.
In a liquid crystal display device equipped with an IC, the terminal portion includes a transparent conductive film and a nickel phosphorus metal coating formed in a film form by fusion of phosphorous element to nickel element formed on the transparent conductive film at required parts. A liquid crystal display device comprising a conductor having a nickel-boron metal coating formed on the nickel-phosphorus metal coating by fusing a boron element to a nickel element. 2. The liquid crystal display device according to claim 1, wherein the nickel phosphorus metal coating is a nickel phosphorus plating coating. 3. The liquid crystal display device according to claim 1, wherein the nickel boron metal coating is a nickel boron plating coating. 4 The thickness of either or both of the nickel phosphorus metal coating and the nickel boron metal coating is
The liquid crystal display device according to any one of claims 1 to 3, which has a thickness of 500 Å to 5000 Å. 5. The liquid crystal display device according to claim 1, wherein the conductor is a conductor in which a third metal film is formed on a nickel boron metal film at a required portion. 6. The liquid crystal display device according to claim 5, wherein the third metal film is a copper plating film or a gold plating film. 7. The liquid crystal display device according to claim 5, wherein the third metal film is an aluminum film, an indium film, or a tin film. 8. The liquid crystal display device according to any one of claims 5 to 7, wherein the third metal film has a thickness of 1 μm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11550284A JPS60262304A (en) | 1984-06-07 | 1984-06-07 | Conductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11550284A JPS60262304A (en) | 1984-06-07 | 1984-06-07 | Conductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60262304A JPS60262304A (en) | 1985-12-25 |
| JPH0447923B2 true JPH0447923B2 (en) | 1992-08-05 |
Family
ID=14664102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11550284A Granted JPS60262304A (en) | 1984-06-07 | 1984-06-07 | Conductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60262304A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2520399B2 (en) * | 1986-08-12 | 1996-07-31 | シチズン時計株式会社 | Color liquid crystal panel manufacturing method |
| JP2520398B2 (en) * | 1986-08-12 | 1996-07-31 | シチズン時計株式会社 | Color LCD panel |
| US6569517B1 (en) * | 2000-11-17 | 2003-05-27 | 3M Innovative Properties Company | Color tailorable pigmented optical bodies with surface metalization |
| TWI234885B (en) * | 2002-03-26 | 2005-06-21 | Fujikura Ltd | Electroconductive glass and photovoltaic cell using the same |
| JP4954855B2 (en) * | 2002-03-26 | 2012-06-20 | 株式会社フジクラ | Manufacturing method of dye-sensitized solar cell |
-
1984
- 1984-06-07 JP JP11550284A patent/JPS60262304A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60262304A (en) | 1985-12-25 |
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