JPH0447290B2 - - Google Patents

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Publication number
JPH0447290B2
JPH0447290B2 JP62289065A JP28906587A JPH0447290B2 JP H0447290 B2 JPH0447290 B2 JP H0447290B2 JP 62289065 A JP62289065 A JP 62289065A JP 28906587 A JP28906587 A JP 28906587A JP H0447290 B2 JPH0447290 B2 JP H0447290B2
Authority
JP
Japan
Prior art keywords
light
shutter element
electrode member
substrate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62289065A
Other languages
Japanese (ja)
Other versions
JPH01130128A (en
Inventor
Yukio Toyoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Proterial Ltd
Original Assignee
Sumitomo Special Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Special Metals Co Ltd filed Critical Sumitomo Special Metals Co Ltd
Priority to JP28906587A priority Critical patent/JPH01130128A/en
Publication of JPH01130128A publication Critical patent/JPH01130128A/en
Publication of JPH0447290B2 publication Critical patent/JPH0447290B2/ja
Granted legal-status Critical Current

Links

Description

【発明の詳細な説明】 利用産業分野 この発明は、電気光学効果を有するセラミツク
ス基板を電極部材を介して積層し多数の光透過部
を形成した構成や基板に設けた多数の基板凸部を
電極部材で挟み光透過部を形成した構成等からな
る光シヤツタ素子の改良に係り、特に、光漏れを
防ぎ、完全な光シヤツタ機能を有する光シヤツタ
素子に関する。
Detailed Description of the Invention Field of Application This invention relates to a structure in which ceramic substrates having an electro-optic effect are laminated with electrode members interposed therebetween to form a large number of light transmitting portions, and a structure in which a large number of substrate convex portions provided on the substrate are laminated via electrode members. The present invention relates to an improvement in a light shutter element having a structure in which a light transmitting part is formed between sandwiched members, and particularly to a light shutter element that prevents light leakage and has a complete light shutter function.

背景技術 電気光学効果を利用した光シヤツタのうち、偏
光方向が相互に直交する一対の偏光素子間に、電
界方向が入射光の偏光方向と45°の交差角度を形
成する光シヤツタ素子を配置して構成した光学素
子は、光学式プリンタの書込みデバイス、光学カ
メラのシヤツタ、立体眼鏡、溶接用保護眼鏡など
の多用途の適用が考えられている。
BACKGROUND ART Among optical shutters that utilize electro-optic effects, an optical shutter element whose electric field direction forms an intersection angle of 45° with the polarization direction of incident light is arranged between a pair of polarizing elements whose polarization directions are orthogonal to each other. Optical elements constructed with this structure are considered to have a variety of applications, such as writing devices for optical printers, shutters for optical cameras, stereoscopic glasses, and protective goggles for welding.

光シヤツタ素子としては第5図に示す如く、
(PbLa)(ZrTi)O3,LiNbO3,Bi12SiO20等の複
数の電気光学効果を有するセラミツクス基板1
を、Ni等からなる電極部材2を介して基板1の
厚み方向に積層固着し、積層された各基板1の厚
み端面、すなわち露出端面を光透過面3とし、各
基板1を光透過部とした構成が知られている。
As shown in Fig. 5, the optical shutter element is
Ceramic substrate 1 with multiple electro-optic effects such as (PbLa)(ZrTi)O 3 , LiNbO 3 , Bi 12 SiO 20
are laminated and fixed in the thickness direction of the substrate 1 via an electrode member 2 made of Ni or the like, and the thickness end face of each laminated substrate 1, that is, the exposed end face is used as a light transmitting surface 3, and each substrate 1 is used as a light transmitting part. This configuration is known.

この積層基板には、その側端面に露出する電極
部材2を一層おきに絶縁する絶縁層4が設けてあ
り、さらに他の電極部材2を一層おきに接続する
給電用外部電極5が設けてある。
This laminated board is provided with an insulating layer 4 that insulates every other electrode member 2 exposed on its side end face, and is further provided with an external power supply electrode 5 that connects another electrode member 2 every other layer. .

また、光シヤツタ素子の他の構成として第7図
に示す如く、電気光学効果を有するセラミツクス
基板10の主面に複数の平行溝11を設けて基板
凸部12を突出形成し、該溝11内周面に電極部
材13を被着し、各基板凸部12の厚み端面、す
なわち露出端面を光透過面14とし、各基板凸部
12を光透過部とした構成が知られている。
As another structure of the optical shutter element, as shown in FIG. A known configuration is known in which an electrode member 13 is attached to the peripheral surface, the thickness end face, that is, the exposed end face of each substrate convex portion 12 is used as a light transmitting surface 14, and each substrate convex portion 12 is used as a light transmitting portion.

また、基板10の両側端面には、溝11内に被
着された電極部材13を一つおきに電気的に接続
する給電用外部電極15が形成してある。
Further, on both side end faces of the substrate 10, power feeding external electrodes 15 are formed to electrically connect every other electrode member 13 deposited in the groove 11.

従来技術の問題点 これらの光シヤツタ素子の構成においては、い
ずれも自然光を用いた場合に、完全に光を遮断す
ることが不可能であつた。
Problems with the Prior Art In the configurations of these optical shutter elements, it has been impossible to completely block light when natural light is used.

そこで、光漏れの原因を検討すると、第6図に
て示す如く現象が発生していることを知見した。
第6図は前述した第5図の構成からなる光シヤツ
タ素子の一部詳細縦断面図である。
When the cause of light leakage was investigated, it was discovered that a phenomenon as shown in FIG. 6 occurred.
FIG. 6 is a partially detailed vertical sectional view of the optical shutter element having the structure shown in FIG. 5 described above.

一方の偏光子(図示せず)を透過した光のう
ち、当該光シヤツタ素子の光透過面3に垂直に入
射した光、すなわち電極部材2と平行に入射した
光(図中α)は該光シヤツタ素子の基板1を透過
するが、他方(後方)の偏光子(図示せず)によ
り完全に遮断される。
Of the light transmitted through one polarizer (not shown), the light incident perpendicularly to the light transmission surface 3 of the light shutter element, that is, the light incident parallel to the electrode member 2 (α in the figure) is the light The light passes through the substrate 1 of the shutter element, but is completely blocked by the other (rear) polarizer (not shown).

さらに、光シヤツタ素子の電極部材2に半波長
電圧が印加されると、電極部材2間に形成される
電界作用により、前記入射光は、その電界方向を
90°回転させ後方の偏光子を通過する。
Furthermore, when a half-wavelength voltage is applied to the electrode member 2 of the optical shutter element, the incident light changes in the direction of the electric field due to the action of the electric field formed between the electrode members 2.
Rotate 90° and pass through the rear polarizer.

しかし、光シヤツタは前述の如く種々の用途に
用いられ、使用される光も通常自然光が多く、光
シヤツタ素子に入射される光も図中αの如き平行
光とは限らない。
However, as mentioned above, optical shutters are used for various purposes, and the light used is usually natural light, and the light incident on the optical shutter element is not necessarily parallel light as indicated by α in the figure.

第6図の図中βにて示す如く、光シヤツタ素子
の光透過面3に、平行光α対してθなる角度を有
して入射した光は、電極部材2によつて反射し、
その反射光が後方の偏光子に到達することとな
る。
As shown by β in FIG. 6, the light incident on the light transmission surface 3 of the light shutter element at an angle θ with respect to the parallel light α is reflected by the electrode member 2, and
The reflected light reaches the rear polarizer.

通常、光はP波(電極部材に対して光の電界の
振動方向が垂直のもの)とS波(電極部材に対し
て光の電界の振動方向が平行のもの)とからなる
と考えられており、特に反射光においてはP波と
S波の各々反射率が異なり、一般的にS波のほう
が反射率が高いとされ、反射前後において光の電
界方向がわずかに変化することになる。
Normally, light is thought to consist of P waves (the direction of vibration of the electric field of light is perpendicular to the electrode member) and S waves (the direction of vibration of the electric field of light is parallel to the electrode member). In particular, in reflected light, the reflectance of P waves and S waves is different, and it is generally said that the reflectance of S waves is higher, and the direction of the electric field of light changes slightly before and after reflection.

すなわち、第6図において光シヤツタ素子に入
射した光の電界方向と、電極部材2によつて反射
した光の電界方向とがわずかに異なり、後方の偏
光子に到達した光の一部が、光シヤツタ素子に電
圧を印加しないにもかかわらず、該偏光子を透過
してしまう。
That is, in FIG. 6, the electric field direction of the light incident on the optical shutter element and the electric field direction of the light reflected by the electrode member 2 are slightly different, and a part of the light reaching the rear polarizer is Even though no voltage is applied to the shutter element, the light passes through the polarizer.

第7図に示す構成の光シヤツタ素子においても
同様に、溝11内に被着される電極部材13によ
り、ある傾きをもつて入射した光が反射し、光シ
ヤツタ素子に電圧を印加しないにもかかわらず偏
光子を透過し、完全な光の遮断が困難となる。
Similarly, in the optical shutter element having the configuration shown in FIG. 7, the electrode member 13 deposited in the groove 11 reflects the incident light at a certain angle, even though no voltage is applied to the optical shutter element. However, the light passes through the polarizer, making it difficult to completely block the light.

従つて、光学カメラのシヤツタ等、完全な光シ
ヤツタ機能を要求される分野では、これらの光シ
ヤツタ素子の改良が強く望まれていた。
Therefore, in fields where a complete optical shutter function is required, such as the shutter of an optical camera, there has been a strong desire to improve these optical shutter elements.

発明の目的 この発明は、上述した光シヤツタ素子の現状に
鑑み、光透過面に対して傾斜した光に基づく光漏
れを防ぎ、完全な光シヤツタ機能を有する光シヤ
ツタ素子を提供することを目的とする。
Purpose of the Invention In view of the above-mentioned current state of the optical shutter element, an object of the present invention is to provide an optical shutter element that prevents light leakage due to light tilted with respect to a light transmission surface and has a complete optical shutter function. do.

発明の概要 この発明は、 電気光学効果を有する所要形状からなるセラミ
ツクス材料を電極部材で挟み、露出させた端面を
光透過面とする光シヤツタ素子において、 光透過面に対し傾斜した入射光が電極部材面で
反射し透過するのを防止するための絶縁性物質か
らなる光不透過膜を、前記光透過面となる露出端
面の電極部材露出部近傍に被着したことを特徴と
する光シヤツタ素子である。
Summary of the Invention The present invention provides a light shutter element in which a ceramic material having a predetermined shape having an electro-optic effect is sandwiched between electrode members, and the exposed end face is used as a light transmitting surface. A light shutter element characterized in that a light-impermeable film made of an insulating material for preventing reflection and transmission from the member surface is deposited near the exposed portion of the electrode member on the exposed end face serving as the light-transmitting surface. It is.

さらに、この発明の具体例を説明すると、 電気光学効果を有するセラミツクス基板を電極
部材を介して基板の厚み方向に積層固着し、該積
層基板の厚み端面、すなわち露出端面を光透過面
とする光シヤツタ素子において、前記露出端面の
少なくとも一方の電極部材露出部近傍に絶縁性物
質からなる光不透過膜を被着したことを特徴とす
る光シヤツタ素子である。
Further, to describe a specific example of the present invention, ceramic substrates having an electro-optical effect are laminated and fixed in the thickness direction of the substrates via electrode members, and the thickness end face of the laminated substrate, that is, the exposed end face is used as a light transmitting surface. The light shutter element is characterized in that a light-opaque film made of an insulating material is coated near the exposed portion of at least one electrode member on the exposed end face.

また、さらに、 電気光学効果を有するセラミツクス基板に複数
の平行溝を設けるとともに、該溝内周面に電極部
材を被着し、基板の厚み端面、すなわち基板凸部
先端の露出端面を光透過面とする光シヤツタ素子
において、前記露出端面の電極部材露出部近傍に
絶縁性物質からなる光不透過膜を被着したことを
特徴とする光シヤツタ素子である。
Furthermore, a plurality of parallel grooves are provided in a ceramic substrate having an electro-optical effect, and an electrode member is adhered to the inner peripheral surface of the groove, and the thickness end surface of the substrate, that is, the exposed end surface at the tip of the substrate convexity is made into a light transmitting surface. The light shutter element is characterized in that a light-opaque film made of an insulating material is coated near the exposed portion of the electrode member on the exposed end face.

発明の好ましい構成 この発明において、電気光学効果を有するセラ
ミツクス基板としては、(PbLa)(ZrTi)O3
LiNbO3,Bi12SiO20等公知の材料を用いることが
できる。
Preferred configuration of the invention In the present invention, the ceramic substrate having an electro-optic effect is (PbLa)(ZrTi)O 3 ,
Known materials such as LiNbO 3 and Bi 12 SiO 20 can be used.

また、電極部材2としてもNi等の公知の材料
を用いることができる。
Furthermore, a known material such as Ni can be used as the electrode member 2.

この発明の特徴である特定位置に設ける光不透
過膜は、光シヤツタ素子の目的や用途、要求され
る光透過率、遮光率あるいは使用する光源に応じ
て、光透過面の電極部材露出部近傍の所要箇所
に、適宜選定される幅をもつて帯状に配置され
る。
The light-opaque film provided at a specific position, which is a feature of this invention, can be placed near the exposed part of the electrode member on the light-transmitting surface depending on the purpose and use of the light shutter element, the required light transmittance, the light shielding rate, or the light source used. They are arranged in a band shape at the required locations with an appropriately selected width.

また、光不透過膜は、基板の光透過面の入射
側、出射側のいずれにもまたその両方にも設ける
ことができるが、光の遮断を確実にするには少な
くとも入射側に設けることが好ましい。
Additionally, the light-opaque film can be provided on either the incident side, the output side, or both of the light-transmitting surface of the substrate, but it is recommended to provide it at least on the incident side to ensure light blocking. preferable.

光不透過膜の材質としては、文字どおり光の入
出射を防ぐ光不透過膜であれば、光反射物質でも
良いが、光吸収物質のほうがより好ましい。
The material of the light-opaque film may be a light-reflecting material as long as it literally prevents light from entering and exiting, but a light-absorbing material is more preferable.

また、導電性物質は電極部材間の正常な電界形
成を阻害する可能性もあり、光不透過膜の材質と
しては絶縁性物質を使用する。
Furthermore, since conductive substances may inhibit normal electric field formation between electrode members, an insulating substance is used as the material for the light-opaque film.

従つて、光不透過膜としては、例えば、黒色の
絶縁性樹脂や塗料等を、スクリーン印刷等公知の
方法により配設することができる。
Therefore, as the light-opaque film, for example, a black insulating resin or paint can be provided by a known method such as screen printing.

発明の図面に基づく開示 第1図はこの発明による光シヤツタ素子の一実
施例を示す斜視図であり、第2図はその縦断面
図、第3図は部分詳細図である。第4図はこの発
明による光シヤツタ素子の他実施例を示す斜視図
である。
Disclosure of the Invention Based on Drawings FIG. 1 is a perspective view showing an embodiment of an optical shutter element according to the present invention, FIG. 2 is a longitudinal sectional view thereof, and FIG. 3 is a partially detailed view. FIG. 4 is a perspective view showing another embodiment of the optical shutter element according to the present invention.

まず、第1図に示す光シヤツタ素子は、複数の
電気光学効果を有するセラミツクス基板1を、
Ni等からなる電極部材2を介して基板1の厚み
方向に積層固着した構成からなり、積層された各
基板1の厚み端面、すなわち露出端面を光透過面
3とし、各基板1を光透過部としている。
First, the optical shutter element shown in FIG. 1 includes a ceramic substrate 1 having a plurality of electro-optic effects.
The substrates 1 are laminated and fixed in the thickness direction through electrode members 2 made of Ni or the like, and the thickness end faces of each of the laminated substrates 1, that is, the exposed end faces are used as light transmitting surfaces 3, and each substrate 1 is used as a light transmitting part. It is said that

この積層基板には、その側端面に露出する電極
部材2を一層おきに絶縁する絶縁層4が設けてあ
り、さらに他の電極部材2を一層おきに接続する
給電用外部電極5が設けてある。
This laminated board is provided with an insulating layer 4 that insulates every other electrode member 2 exposed on its side end face, and is further provided with an external power supply electrode 5 that connects another electrode member 2 every other layer. .

この発明の特徴である光不透過膜6は、第1図
〜第3図に示す如く、光透過面3間に露出する電
極部材2を覆うよう、幅tの帯状に被着形成され
ている。
The light-opaque film 6, which is a feature of the present invention, is formed in a band shape with a width t so as to cover the electrode member 2 exposed between the light-transmitting surfaces 3, as shown in FIGS. 1 to 3. .

従つて、第3図に明らかなように、光不透過膜
6により、膜6面の直角軸に対してθ′なる角度を
有して入射する光γは、電極部材2に反射するこ
となく基板1内を透過する。
Therefore, as is clear from FIG. 3, the light γ incident at an angle θ′ with respect to the perpendicular axis of the film 6 is not reflected by the light-impermeable film 6 onto the electrode member 2. Transmits through the substrate 1.

すなわち、第3図の構成においては、θ′より小
さな角度、換言すると、より平行光に近くなる角
度の光は、すべて後方に位置する偏光子(図示せ
ず)によつて遮断されることになる。
That is, in the configuration of FIG. 3, all light at an angle smaller than θ', in other words, light at an angle closer to parallel light, is blocked by a polarizer (not shown) located at the rear. Become.

また、光不透過膜6の幅tは、必要以上に広げ
ると、光透過面3の面積を小さくして透過効率を
低下させることになるため、基板1の厚さl、及
び幅d、さらに入射光の入射角度等を十分考慮し
た上で選定することが望ましい。
In addition, if the width t of the light-opaque film 6 is increased more than necessary, the area of the light-transmitting surface 3 will be reduced and the transmission efficiency will be reduced. It is desirable to make a selection after fully considering the incident angle of the incident light.

また、第1図の例においては、光の入射側の光
透過面3にのみ光不透過膜6を被着形勢した構成
を示すが、反射光が光シヤツタ素子を透過するの
を防ぐために、光の出射側面(裏面)の電極部材
露出部近傍に被着形成するのも良く、さらに入出
射側両面に設けるのもよい。
Further, in the example shown in FIG. 1, a configuration is shown in which a light-opaque film 6 is coated only on the light-transmitting surface 3 on the light incident side, but in order to prevent reflected light from passing through the light shutter element, It is preferable to form the electrode near the exposed part of the electrode member on the light emission side (back surface), and furthermore, it is preferable to provide it on both the incident and output sides.

次に、第4図に示す光シヤツタ素子は、電気光
学効果を有するセラミツクス基板10の一方主面
に、複数の平行溝11を設けて複数の基板凸部1
2を突出形成し、該溝11内周面に電極部材13
を被着し、各基板凸部12の厚み端面、すなわち
露出端面を光透過面14とし、各基板凸部12を
光透過部とした構成からなる。
Next, in the optical shutter element shown in FIG. 4, a plurality of parallel grooves 11 are provided on one main surface of a ceramic substrate 10 having an electro-optic effect, and a plurality of substrate protrusions 1 are formed.
2 is formed protrudingly, and an electrode member 13 is formed on the inner peripheral surface of the groove 11.
The thickness end face, that is, the exposed end face of each substrate convex portion 12 is used as a light transmitting surface 14, and each substrate convex portion 12 is used as a light transmitting portion.

また、基板10の両側端面には、溝11内に被
着された電極部材13を一つおきに電気的に接続
する給電用外部電極15が形成してある。
Further, on both side end faces of the substrate 10, power feeding external electrodes 15 are formed to electrically connect every other electrode member 13 deposited in the groove 11.

以上の構成においても、第1図の構成の光シヤ
ツタ素子と同様、光透過面14に接続して露出す
る電極部材13(第7図参照)を覆うよう、幅t
の帯状に光不透過膜16が被着形成されている。
In the above structure as well, as in the light shutter element having the structure shown in FIG. 1, the width t
A light-opaque film 16 is formed in the form of a band.

この光不透過膜16の幅寸法tを適正寸法に選
定することによつて、透過効率を低下させること
なく、光透過面14に対して傾斜して入射し、電
極部材13にて反射する反射光による光漏れを防
ぐことができる。
By selecting the width dimension t of this light-opaque film 16 to be an appropriate dimension, reflections incident on the light-transmitting surface 14 at an angle and reflected by the electrode member 13 can be prevented without reducing the transmission efficiency. Light leakage can be prevented.

実施例 実施例 1 この発明の効果を確認するために、前述した構
成からなる第1図(本発明)及び第5図(従来
例)の光シヤツタ素子を作製し、同一光源(ナト
リウムランプ)を用いて漏れ光量を測定した。
Examples Example 1 In order to confirm the effects of this invention, the light shutter elements shown in FIG. 1 (present invention) and FIG. The amount of leaked light was measured using

各素子の基板として、Pbに対するLaの置換量
が9原子%、Zr/Ti比が65/35からなる
(PbLa)(ZrTi)O3を用いた。
As a substrate for each element, (PbLa)(ZrTi)O 3 was used, in which the amount of La substituted for Pb was 9 atomic %, and the Zr/Ti ratio was 65/35.

また、電極部材として厚さ1μmのNiを被着し
た。
Additionally, 1 μm thick Ni was deposited as an electrode member.

第1図及び第5図に示す各部の寸法は、 光シヤツタ素子の厚さd=0.5mm、 各々電極間距離l=0.5mmとした。 The dimensions of each part shown in Figures 1 and 5 are as follows: Thickness of optical shutter element d=0.5mm, The distance between each electrode was set to l = 0.5 mm.

また、第1図の構成(本発明)においては、光
不透過膜として幅t=0.1mmからなる帯状の黒色
塗料を被着した。
In the structure shown in FIG. 1 (invention), a strip-shaped black paint having a width t=0.1 mm was applied as a light-opaque film.

その結果、従来の第5図の構成では、漏れ光量
が5%であつたのに対し、この発明による第1図
の構成では漏れ光量を僅か1%に低減することが
できた。
As a result, in the conventional configuration shown in FIG. 5, the amount of leaked light was 5%, whereas in the configuration shown in FIG. 1 according to the present invention, the amount of leaked light could be reduced to only 1%.

実施例 2 この発明の効果を確認するために、前述した構
成からなる第4図(本発明)及び第7図(従来
例)の光シヤツタ素子を作製し、同一光源(ナト
リウムランプ)を用いて漏れ光量を測定した。
Example 2 In order to confirm the effects of the present invention, the light shutter elements shown in FIG. 4 (present invention) and FIG. 7 (conventional example) having the above-described configurations were fabricated, and the same light source (sodium lamp) was used. The amount of leaked light was measured.

各素子の基板として、Pbに対するLaの置換量
が9原子%、Zr/Ti比が65/35からなる
(PbLa)(ZrTi)O3を用いた。
As a substrate for each element, (PbLa)(ZrTi)O 3 was used, in which the amount of La substituted for Pb was 9 atomic %, and the Zr/Ti ratio was 65/35.

また、電極部材として厚さ1μmのNiを被着し
た。
Additionally, 1 μm thick Ni was deposited as an electrode member.

第4図及び第7図に示す各部の寸法は、 光シヤツタ素子の厚さd=0.5mm、 各々電極間距離l=0.5mm、 溝深さd′=0.3mmとした。 The dimensions of each part shown in Figures 4 and 7 are as follows: Thickness of optical shutter element d=0.5mm, Each electrode distance l=0.5mm, The groove depth d' was set to 0.3 mm.

また、第4図の構成(本発明)においては、光
不透過膜として、幅t=0.1mmからなる帯状黒色
塗料を被着した。
In the structure shown in FIG. 4 (invention), a black paint strip having a width t=0.1 mm was applied as a light-opaque film.

その結果、従来の第7図の構成では、漏れ光量
が3%であつたのに対し、この発明による第1図
の構成では漏れ光量を僅か0.5%に低減すること
ができた。
As a result, in the conventional configuration shown in FIG. 7, the amount of leaked light was 3%, whereas in the configuration shown in FIG. 1 according to the present invention, the amount of leaked light could be reduced to only 0.5%.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明による光シヤツタ素子の一実
施例を示す斜視図であり、第2図はその縦断面
図、第3図は部分詳細図である。第4図はこの発
明による光シヤツタ素子の他実施例を示す斜視図
である。第5図は従来の光シヤツタ素子の斜視説
明図であり、第6図はその一部詳細断面図であ
る。第7図は従来の他の光シヤツタ素子の斜視説
明図である。 1……セラミツクス基板、2……電極部材、3
……光透過面、4……絶縁層、5……給電用外部
電極、6……光不透過膜、10……セラミツクス
基板、11……溝、12……基板凸部、13……
電極部材、14……光透過面、15……給電用外
部電極、16……光不透過膜。
FIG. 1 is a perspective view showing an embodiment of the optical shutter element according to the present invention, FIG. 2 is a longitudinal sectional view thereof, and FIG. 3 is a partially detailed view thereof. FIG. 4 is a perspective view showing another embodiment of the optical shutter element according to the present invention. FIG. 5 is a perspective explanatory view of a conventional optical shutter element, and FIG. 6 is a partially detailed sectional view thereof. FIG. 7 is a perspective view of another conventional optical shutter element. 1...Ceramics substrate, 2...Electrode member, 3
. . . Light transmitting surface, 4 .
Electrode member, 14...Light-transmitting surface, 15... External electrode for power supply, 16... Light-opaque film.

Claims (1)

【特許請求の範囲】 1 電気光学効果を有する所要形状からなるセラ
ミツクス材料を電極部材で挟み、露出させた端面
を光透過面とする光シヤツタ素子において、 光透過面に対し傾斜した入射光が電極部材面で
反射し透過するのを防止するための絶縁性物質か
らなる光不透過膜を、前記光透過面となる露出端
面の電極部材露出部近傍に被着したことを特徴と
する光シヤツタ素子。
[Scope of Claims] 1. In a light shutter element in which a ceramic material having a predetermined shape having an electro-optical effect is sandwiched between electrode members and the exposed end face is a light transmitting surface, incident light that is inclined with respect to the light transmitting surface is transmitted to the electrode. A light shutter element characterized in that a light-impermeable film made of an insulating material for preventing reflection and transmission from the member surface is deposited near the exposed portion of the electrode member on the exposed end face serving as the light-transmitting surface. .
JP28906587A 1987-11-16 1987-11-16 Optical shutter element Granted JPH01130128A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28906587A JPH01130128A (en) 1987-11-16 1987-11-16 Optical shutter element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28906587A JPH01130128A (en) 1987-11-16 1987-11-16 Optical shutter element

Publications (2)

Publication Number Publication Date
JPH01130128A JPH01130128A (en) 1989-05-23
JPH0447290B2 true JPH0447290B2 (en) 1992-08-03

Family

ID=17738371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28906587A Granted JPH01130128A (en) 1987-11-16 1987-11-16 Optical shutter element

Country Status (1)

Country Link
JP (1) JPH01130128A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6285219A (en) * 1985-10-03 1987-04-18 Fuji Photo Film Co Ltd Optical shutter array
JPS62135807A (en) * 1985-12-10 1987-06-18 Matsushita Electric Ind Co Ltd Optical shutter element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6285219A (en) * 1985-10-03 1987-04-18 Fuji Photo Film Co Ltd Optical shutter array
JPS62135807A (en) * 1985-12-10 1987-06-18 Matsushita Electric Ind Co Ltd Optical shutter element

Also Published As

Publication number Publication date
JPH01130128A (en) 1989-05-23

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