JPH0444220A - Semiconductor manufacturing device - Google Patents

Abstract

PURPOSE:To make the thickness of a thin film uniform on the surface of a semiconductor substrate so as to improve the uniformity of semiconductor device characteristics on the surface of the semiconductor substrate by providing such a function that synchronously turns two or more shafts holding the semiconductor substrate in the same direction so as to turn the substrate on its axis. CONSTITUTION:The 1, 2, and 3 in the figure respectively represent quartz tube, semiconductor substrate, and shafts which hold the substrate 2 and synchronously turn in the same direction so as to turn the substrate on its axis. A reactive and carrier gases are made to flow to a horizontal thin film forming device from the front side and form an insulating film on the substrate 2. At the time of forming the insulating film, the reactive and carrier gases flow through one side of the quartz tube 1, but, since the two shafts 3 synchronously turn in the same direction and the substrate 2 turns on its axis, the substrate 2 are uniformly brought into contact with the reactive and carrier gases and a film having a uniform thickness can be formed on the substrate 2.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an improvement of a boat in a horizontal thin film forming apparatus for semiconductor manufacturing equipment.

[Prior Art] As shown in FIG. 2, a boat in a horizontal thin film forming apparatus of a conventional semiconductor manufacturing apparatus is placed in a quartz tube 1.
It had a structure in which the semiconductor substrate 2 was supported by two or more shafts fixed to a boat.

[Problems to be Solved by the Invention] However, in the above-mentioned conventional technology, the reaction gas and carrier gas for forming the thin film flow in a part of the quartz tube 1, so that the thin film formed on the semiconductor substrate is A problem arises when the film thickness becomes non-uniform within the plane of the semiconductor substrate and the semiconductor device characteristics become non-uniform within the plane of the semiconductor substrate. Therefore, the present invention is like this! II! ! In order to solve the problem, two or more shafts holding a semiconductor substrate in a horizontal thin film forming apparatus are synchronized and rotated in the same direction, and the semiconductor substrate is rotated about the center of the semiconductor substrate, thereby It is an object of the present invention to make the thickness of a thin film formed on a semiconductor substrate uniform within the plane of the semiconductor substrate, and to improve the uniformity of semiconductor device characteristics within the plane of the semiconductor substrate.

[Means for solving the problem] Semiconductor manufacturing bag of the present invention! is horizontal 'F4Il! The forming apparatus is characterized in that two or more shafts holding the semiconductor substrate rotate in synchronization in the same direction, causing the semiconductor substrate to rotate about the center of the semiconductor substrate.

[Example j Figure 1 is a main sectional view in an example of the present invention, and 1
2 is a quartz tube, 2 is a semiconductor substrate, and 3 is a shaft that holds the semiconductor substrate 2, rotates in the same direction in synchronization, and rotates about the center of the semiconductor substrate 2.

In the horizontal thin film forming apparatus, the reaction gas and carrier gas flow from the front with respect to FIGS.
An insulating film is formed thereon. At this time, the reaction gas and carrier gas flow in a part of the quartz tube l, but the two shafts 3 holding the semiconductor substrate 2 rotate in synchronization and in the same direction, and the center of the semiconductor substrate 2 is rotated in synchronization. The semiconductor substrate 2 rotates about the axis. This allows the semiconductor substrate 2 to come into uniform contact with the reaction gas and carrier gas.

A thin film having a uniform thickness could be formed on the semiconductor substrate 2.

Further, in the embodiments of the present invention, the explanation has been made on the assumption that the shafts holding the semiconductor substrate 2 rotate at zero, but the same can be said for three or more shafts.

〔Effect of the invention〕

According to the invention as described above, two or more shafts that hold the semiconductor substrate are synchronized and rotated in the same direction, and the semiconductor substrate is rotated about the center of the semiconductor substrate as an axis. The thickness of the thin film formed on the substrate becomes uniform within the plane of the semiconductor substrate, which has the effect of improving the uniformity within the plane of the semiconductor substrate in terms of semiconductor device characteristics.

[Brief explanation of the drawing]

FIG. 1 is a main sectional view showing an embodiment of the horizontal thin film forming apparatus of the present invention. FIG. 2 is a main cross-sectional view showing a conventional horizontal thin film forming apparatus. l...Quartz tube 2...Semiconductor substrate 3...Rotating shaft 4 in the present invention -Fixed axis of movement or more Applicant Seiko Epson Co., Ltd. Agent Patent attorney Kizobe Suzuki (1 other person) ) Solution 1 diagram x 2 functions

Claims (1)

[Claims] A horizontal thin film forming apparatus, wherein two or more shafts holding a semiconductor substrate are synchronized and rotated in the same direction, and have a function of rotating about the center of the semiconductor substrate as an axis.