JPH0443845B2 - - Google Patents
Info
- Publication number
- JPH0443845B2 JPH0443845B2 JP59182775A JP18277584A JPH0443845B2 JP H0443845 B2 JPH0443845 B2 JP H0443845B2 JP 59182775 A JP59182775 A JP 59182775A JP 18277584 A JP18277584 A JP 18277584A JP H0443845 B2 JPH0443845 B2 JP H0443845B2
- Authority
- JP
- Japan
- Prior art keywords
- monosilane
- nitrogen
- oxygen
- present
- argon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 31
- 239000007788 liquid Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 238000010992 reflux Methods 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 238000009835 boiling Methods 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 210000004027 cell Anatomy 0.000 description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 238000000746 purification Methods 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 2
- 229910019018 Mg 2 Si Inorganic materials 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910000102 alkali metal hydride Inorganic materials 0.000 description 1
- 150000008046 alkali metal hydrides Chemical class 0.000 description 1
- 125000005234 alkyl aluminium group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 210000000608 photoreceptor cell Anatomy 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- PPDADIYYMSXQJK-UHFFFAOYSA-N trichlorosilicon Chemical compound Cl[Si](Cl)Cl PPDADIYYMSXQJK-UHFFFAOYSA-N 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18277584A JPS6163517A (ja) | 1984-09-03 | 1984-09-03 | モノシランの精製方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18277584A JPS6163517A (ja) | 1984-09-03 | 1984-09-03 | モノシランの精製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6163517A JPS6163517A (ja) | 1986-04-01 |
JPH0443845B2 true JPH0443845B2 (de) | 1992-07-17 |
Family
ID=16124198
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18277584A Granted JPS6163517A (ja) | 1984-09-03 | 1984-09-03 | モノシランの精製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6163517A (de) |
-
1984
- 1984-09-03 JP JP18277584A patent/JPS6163517A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6163517A (ja) | 1986-04-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5118485A (en) | Recovery of lower-boiling silanes in a cvd process | |
RU2368568C2 (ru) | Способ получения кремния | |
EP3590888B1 (de) | Vorrichtung und verfahren zur herstellung von trisilylamin in einer kondensierten phase | |
US4112057A (en) | Process for purifying halogenosilanes | |
US20140219893A1 (en) | Cyclohexasilane and method for producing the same | |
US8404205B2 (en) | Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by forming phosphorus-boron compounds | |
US20040042949A1 (en) | Method for removing aluminum from chlorosilanes | |
CN112408396A (zh) | 一种氯硅烷络合除铝的工艺及装备 | |
JP2570409B2 (ja) | クロロポリシランの精製方法 | |
JPH0443845B2 (de) | ||
JPH0443844B2 (de) | ||
JPH0459518B2 (de) | ||
US8518352B2 (en) | Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by venting the system with an inert gas | |
CN214270230U (zh) | 一种氯硅烷络合除铝的装备 | |
JP5657493B2 (ja) | ホウ素化合物の不純物を減じたトリクロロシラン製造方法 | |
JPH02196014A (ja) | 高純度ジクロロシランの製造方法 | |
JP6486049B2 (ja) | ペンタクロロジシランの製造方法並びに該方法により製造されるペンタクロロジシラン | |
US2931709A (en) | Decarburizing silicon tetrachloride | |
JPH0436090B2 (de) | ||
JP7534652B2 (ja) | 六フッ化タングステンの製造方法および精製方法 | |
JPH04231317A (ja) | ジクロルシランの精製方法 | |
RU2174950C1 (ru) | Способ получения силана | |
JP2001048519A (ja) | フルオロシランガスの精製方法 | |
JP2536360B2 (ja) | クロルシラン類の精製方法 | |
JPS6163518A (ja) | 高純度モノシラン |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |