JPH0443630A - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JPH0443630A JPH0443630A JP15218190A JP15218190A JPH0443630A JP H0443630 A JPH0443630 A JP H0443630A JP 15218190 A JP15218190 A JP 15218190A JP 15218190 A JP15218190 A JP 15218190A JP H0443630 A JPH0443630 A JP H0443630A
- Authority
- JP
- Japan
- Prior art keywords
- solvent
- coating liquid
- vapor
- coating
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 239000011248 coating agent Substances 0.000 claims abstract description 79
- 238000000576 coating method Methods 0.000 claims abstract description 79
- 239000002904 solvent Substances 0.000 claims abstract description 70
- 239000007788 liquid Substances 0.000 claims abstract description 60
- 238000004528 spin coating Methods 0.000 claims abstract description 8
- 229920006395 saturated elastomer Polymers 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 24
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 14
- 239000007789 gas Substances 0.000 abstract description 14
- 238000001704 evaporation Methods 0.000 abstract description 4
- 230000008020 evaporation Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野）
本発明は半導体製造装置に関し、特に、塗布液の粘度を
一定に保ちつつスピン塗布を行うスピン塗布装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor manufacturing apparatus, and particularly to a spin coating apparatus that performs spin coating while keeping the viscosity of a coating liquid constant.
［従来の技術］
従来、スピン塗布による塗布液供給の方法としては、第
２図（ａ）に示す加圧方式と、第２図（ｂ）に示す吸引
方式とが一↑：に用いられている。ここで、第２図（ａ
）に示す加圧方式は、配管２０１ より１．３〜１．８
にｇ／ｃｎｌの加圧Ｎ２ガスを、保護容器２１１内の密
閉されている塗布液容器２１２内へ注入し、その圧力に
よって容器２＋２内の塗４」液２１コ３を塗布液送出１
１？２０９からノズルに送給し、ノズルから塗布液をウ
ェハー上に塗布するものである。この方式は高い粘に１
を持つ塗布液を塗布する場合に用いられている。これに
対し第２図（ｂ）に示す吸引方式は、塗布液容器２１２
内の塗布液２＋３を吸引ポンプ２６３により吸いＪ。[Prior Art] Conventionally, as a method for supplying a coating liquid by spin coating, a pressure method shown in FIG. 2(a) and a suction method shown in FIG. 2(b) have been used. There is. Here, in Figure 2 (a
) is 1.3 to 1.8 from the piping 201.
Pressurized N2 gas of g/cnl is injected into the sealed coating liquid container 212 in the protective container 211, and the pressure causes the coating liquid 21 and 3 in the container 2+2 to be transferred to the coating liquid delivery 1.
1-209 to the nozzle, and the coating liquid is applied onto the wafer from the nozzle. This method is suitable for high viscosity.
It is used when applying a coating liquid with a On the other hand, in the suction method shown in FIG. 2(b), the application liquid container 212
The coating liquid 2+3 inside is sucked by the suction pump 263.
げて塗布液送出管２０９からノズルに送給するものであ
る。このとき、空気取入れ口ＩＩ＋は大気に開放されて
いて、塗布液容器２１２は密閉されていない。この方式
は溶媒が低揮発性で低い粘度を持つ塗布液の塗布に用い
られている。The coating liquid is then fed to the nozzle from the coating liquid delivery pipe 209. At this time, the air intake port II+ is open to the atmosphere, and the coating liquid container 212 is not sealed. This method is used to apply coating liquids in which the solvent has low volatility and low viscosity.
［発明が解決しようとする課題］
従来の第２図（ａ）、 （ｂ）に示す方式では、塗布液
容器２１２中の塗布液の量が減ってくると共に、容器２
１２内には窒素及び空気が流入することにより、塗布液
２１３内の溶媒が揮発してしまうという問題があった。[Problems to be Solved by the Invention] In the conventional method shown in FIGS. 2(a) and 2(b), as the amount of the coating liquid in the coating liquid container 212 decreases,
There is a problem in that the solvent in the coating liquid 213 evaporates due to nitrogen and air flowing into the coating liquid 213 .
これは、特に高揮発性溶媒を用いた塗布液において著し
い。このため、塗布液中の溶媒量が変化することにより
、粘度が変化してしまうという問題があった。また、容
器２１２の内面にイ（着した塗布液は溶媒の蒸発にて固
化し、てしまい、ゴミとして混入してしまうという問題
があった。This is particularly noticeable in coating solutions using highly volatile solvents. Therefore, there is a problem in that the viscosity changes when the amount of solvent in the coating liquid changes. Further, there is a problem in that the coating liquid that has been deposited on the inner surface of the container 212 is solidified by evaporation of the solvent, and is mixed in as dust.
そのため、従来においては、高揮発性溶媒の塗布液を用
いて塗布を行う場合には、１単位分の塗布を行う毎に塗
布液容器を交換する必要があり、作業能率が悪いという
問題があった。Therefore, in the past, when coating with a coating solution containing a highly volatile solvent, it was necessary to replace the coating solution container every time one unit of coating was done, which caused the problem of poor work efficiency. Ta.
本発明の目的は塗布液中の揮発性溶媒が蒸発せず、塗布
液を常に一定の粘度に保つことができる半導体製造装置
を提供することにある。An object of the present invention is to provide a semiconductor manufacturing apparatus in which volatile solvents in a coating solution do not evaporate and the coating solution can always be kept at a constant viscosity.
〔課題を解決するための手段］
前記目的を達成するため、本発明に係る半導体製造装置
においては、ヒータ内蔵の溶媒容器と、トラップと、塗
布液容器とを有し、前記塗布液容器内の塗布液を用いて
スピン塗布を行う半導体製造装置であって、
溶媒容器は、内蔵ヒータで溶媒の蒸気発生を促進させ、
導入されたガスに塗布液の溶媒の蒸気を含ませるもので
あり５
トラップは、塗布液溶媒の蒸気が含まれたガスを冷却し
、溶媒蒸気の飽和状態を作り出すものであり、
塗布液容器は、飽和状態の塗布液溶媒蒸気を含むガスを
密閉空間内に導入し、溶媒の飽和雰囲気中で塗布液を収
容するものである。[Means for Solving the Problem] In order to achieve the above-mentioned object, a semiconductor manufacturing apparatus according to the present invention includes a solvent container with a built-in heater, a trap, and a coating liquid container. A semiconductor manufacturing device that performs spin coating using a coating liquid, the solvent container has a built-in heater to promote the generation of solvent vapor,
The introduced gas contains the vapor of the solvent of the coating solution.5 The trap cools the gas containing the vapor of the coating solution solvent and creates a saturated state of solvent vapor. , a gas containing saturated coating liquid solvent vapor is introduced into a closed space, and the coating liquid is accommodated in a saturated atmosphere of the solvent.
１作用）
本発明によれば、窒素ガスを塗布液の溶媒雰囲気中に通
ず、二とによりガスに溶媒の飽和蒸気を混入させ、該ガ
スをスピン塗布用の塗布液容器内に導入し、塗布液を溶
媒の飽和蒸気雰囲気中で収容するものである。(1) According to the present invention, passing nitrogen gas into the solvent atmosphere of the coating solution, mixing saturated vapor of the solvent into the gas, and introducing the gas into a coating solution container for spin coating, The coating liquid is contained in a saturated vapor atmosphere of a solvent.
［実施例］ 以下、本発明の実施例を図により説明する。[Example] Embodiments of the present invention will be described below with reference to the drawings.
（実施例１）
第１図（ａ）は、本発明の実施例１を示す構成図である
。(Example 1) FIG. 1(a) is a configuration diagram showing Example 1 of the present invention.
本実施例は、本発明を加圧方式型の塗布装置での塗布液
供給部に適用したものである。In this embodiment, the present invention is applied to a coating liquid supply section of a pressure type coating apparatus.
図において、溶媒容器２０３はヒータ２０４を内蔵して
おり、溶媒２０５中に加圧窒素ガス導入用配管２０１を
開口しており、容器２０３内の上部空間より溶媒蒸気送
出管２０２を外部に導出している。In the figure, a solvent container 203 has a built-in heater 204, a pressurized nitrogen gas introduction pipe 201 is opened into the solvent 205, and a solvent vapor delivery pipe 202 is led out from the upper space inside the container 203. ing.
塗布液容器２１２は保護容器２Ｎ内に密閉状態で収容さ
れている。The coating liquid container 212 is housed in the protective container 2N in a sealed state.
溶媒蒸気送出管２０２はトラップ２０６及び圧力調整バ
ルブを介して塗布液容器２１２の上部空間内に開口して
おり、塗布液送出管２０９は塗布液容器２１２の塗布液
２＋３中に開口している。２１０は減圧バルブである。The solvent vapor delivery pipe 202 opens into the upper space of the coating liquid container 212 via a trap 206 and a pressure regulating valve, and the coating liquid delivery pipe 209 opens into the coating liquid 2+3 in the coating liquid container 212. 210 is a pressure reducing valve.
実施例において、配管２０１ より供給された加圧窒素
ガスは、溶媒容器２０３内を通過する際に高揮発性溶媒
の蒸気を含んだ状態で送出管２０２に送り出される。こ
のとき、溶媒蒸気が入っている密閉された容器２０３は
ヒータ２０４によって常温より若干高い温度に制御され
ており、溶媒２０５の蒸気発生を促す。溶媒蒸気を含ん
だ加圧窒素ガスはトラップ２０６を通過する間に冷やさ
れ、溶媒蒸気の飽和状態を作り出す。このようにして生
成された溶媒蒸気を含む加圧窒素ガス２０８を密閉され
た塗布液容器内２１２に導く。このガスの圧力を利用し
て塗布液送出管２０９より塗布液を塗布装置内へと運搬
する。このとき、印加する加圧室ｊ１ガスの圧力は配管
の太さや長さ等を考慮に入れ、従来法と同程度の圧力に
設定する。また液補給時のように塗布液容器２１２内に
溶媒蒸気を含まない気体が混入されたときは、減圧バル
ブ２１０を開き、溶媒蒸気を含んだ窒素ガスと置換させ
、塗布液中の溶媒が揮発しないようにする。In the embodiment, the pressurized nitrogen gas supplied from the pipe 201 is sent to the delivery pipe 202 while containing vapor of a highly volatile solvent when passing through the solvent container 203 . At this time, the temperature of the sealed container 203 containing the solvent vapor is controlled to be slightly higher than normal temperature by the heater 204, and the vapor generation of the solvent 205 is promoted. The pressurized nitrogen gas containing solvent vapor is cooled while passing through trap 206, creating saturation of the solvent vapor. The pressurized nitrogen gas 208 containing the solvent vapor thus generated is introduced into the sealed coating liquid container 212 . Using the pressure of this gas, the coating liquid is transported into the coating apparatus through the coating liquid delivery pipe 209. At this time, the pressure of the pressurized chamber j1 gas to be applied is set to a pressure similar to that of the conventional method, taking into consideration the thickness and length of the piping. In addition, when gas that does not contain solvent vapor is mixed into the coating liquid container 212, such as when replenishing the liquid, the pressure reducing valve 210 is opened to replace the solvent vapor with nitrogen gas, and the solvent in the coating liquid is volatilized. Try not to.
（実施例２）
第１図（ｂ）は本発明を吸引方式の装置に適用した実施
例を示す構成図である。この装置の特徴は吸引ポンプ２
６３を用いて塗布液２＋３を吸引し、かつ溶媒蒸気を含
む窒素ガスをガス循環用ポンプ２６１ で溶媒蒸気循環
用配管に通して塗布液容器内２１２と溶媒容器２０３と
の間で循環させるものである。このとき、バルブ２５１
は通常開じられ、密閉容器２０３内の圧力が減少したと
きのみ常圧窒素を窒素取入れ口２５２より流入させる。(Embodiment 2) FIG. 1(b) is a configuration diagram showing an embodiment in which the present invention is applied to a suction type device. The feature of this device is the suction pump 2.
63 to suck the coating liquid 2+3, and circulate nitrogen gas containing solvent vapor between the coating liquid container 212 and the solvent container 203 by passing it through the solvent vapor circulation piping with a gas circulation pump 261. be. At this time, the valve 251
is normally opened, and atmospheric pressure nitrogen is allowed to flow in through the nitrogen intake port 252 only when the pressure inside the closed container 203 decreases.
その他の溶媒容器の混入機構はＬ記の加圧方式と同じで
ある。この方式は塗布する液の量を加圧方式に比べて制
御しやすいという利点を有する。The other mixing mechanisms of the solvent container are the same as the pressurization method described in L. This method has the advantage that the amount of liquid to be applied can be controlled more easily than the pressurized method.
本発明で使用される装置は塗布液を溶媒の飽和蒸気を含
んだ窒素中にて保存するため、塗布液中からの溶媒の蒸
発を防ぐことができ、塗布液の粘度を一定に保つことが
できるほか、容器側壁等に付着した塗布液の固化を防１
１−することができるという特徴を有する。The device used in the present invention stores the coating solution in nitrogen containing saturated vapor of the solvent, which prevents the solvent from evaporating from the coating solution and keeps the viscosity of the coating solution constant. In addition to this, it also prevents the coating liquid from solidifying on the side walls of the container.
1-.
このような特徴は塗布液を溶媒の飽和蒸気を含んだ窒素
ガス雰囲気にて保存することで初めて可能なことであっ
て、従来の窒素や空気のみを用いた塗布装置では実現で
きない。Such characteristics can only be achieved by storing the coating liquid in a nitrogen gas atmosphere containing saturated vapor of a solvent, and cannot be achieved with conventional coating apparatuses that use only nitrogen or air.
このような応用はポリイミドやシリカ等の高揮発性溶媒
を用いている塗布液においての利用にきわめて大きな力
を発揮する。Such applications are extremely useful in coating solutions that use highly volatile solvents such as polyimide and silica.
［発明の効果］
以−Ｌ説明したように本発明によれば、揮発性の高い溶
媒を用いた塗布液をスピン塗布する際に、塗布期間中学
に、一定の溶媒量に制御することが可能である。これよ
り、塗布液に高揮発性溶媒を用いた場合であっても溶媒
の蒸発を気にすることなく塗布することができ、塗布方
法そのものは従来の低揮発性溶媒を用いたときと同じ要
領で行うことができる。よって塗布液を１回塗布に必要
な量だけに分けて保存する等の無駄な手間が省け、高い
生産性とコストダウンが可能になる。[Effects of the Invention] As explained below, according to the present invention, when spin coating a coating liquid using a highly volatile solvent, it is possible to control the amount of solvent to a constant amount during the coating period. It is. As a result, even when a highly volatile solvent is used in the coating solution, it can be applied without worrying about evaporation of the solvent, and the application method itself is the same as when using a conventional low-volatile solvent. It can be done with Therefore, wasteful efforts such as dividing and storing the coating liquid into only the amount necessary for one coating can be eliminated, making it possible to achieve high productivity and cost reduction.
第１図（ａ）は本発明の実施例１を示す構成図、第１図
（ｂ）は本発明の実施例２を示す構成図、第２図（ａ）
、 （ｂ）は従来例を示す構成図である。
２０１・・・加圧窒素ガス導入用配管
２０２・・・溶媒蒸気送出管 ２０３・・・溶媒容器
２０４・・・ヒータ ２０５・・・溶媒２
０６・・・トラップ ２０７・・・圧力調整バ
ルブ２０８・・溶媒蒸気を含む窒素ガス
２０９・・・塗布液送出管 ２１０・減圧バルブ２
１＋・・・保護容器 ２１２・・・塗布液容器
２１３・・塗布液 ２５２・窒素取入れ日
２６０・溶媒蒸気循環用配管
２６１ ・ガス循環用ポンプ ２６３・・・吸引ポンプ
π２７ヒ、壽アｆ ２．）、ｏｆ斉沃き上管／ ハ”
ノ、フー
特許出願人 Ｆ１本電気株式会社FIG. 1(a) is a block diagram showing Embodiment 1 of the present invention, FIG. 1(b) is a block diagram showing Embodiment 2 of the present invention, FIG. 2(a)
, (b) is a configuration diagram showing a conventional example. 201...Pipe for introducing pressurized nitrogen gas 202...Solvent vapor delivery pipe 203...Solvent container 204...Heater 205...Solvent 2
06...Trap 207...Pressure adjustment valve 208...Nitrogen gas containing solvent vapor 209...Coating liquid delivery pipe 210/Pressure reduction valve 2
1+...Protective container 212...Coating liquid container 213...Coating liquid 252・Nitrogen intake date 260・Solvent vapor circulation piping 261・Gas circulation pump 263...Suction pump π27hi, Jua f2. ), of Qiyokki upper pipe / Ha”
No, Fu patent applicant F1 Hon Electric Co., Ltd.
Claims (1)
器とを有し、前記塗布液容器内の塗布液を用いてスピン
塗布を行う半導体製造装置であって、溶媒容器は、内蔵
ヒータで溶媒の蒸気発生を促進させ、導入されたガスに
塗布液の溶媒の蒸気を含ませるものであり、 トラップは、塗布液溶媒の蒸気が含まれたガスを冷却し
、溶媒蒸気の飽和状態を作り出すものであり、 塗布液容器は、飽和状態の塗布液溶媒蒸気を含むガスを
密閉空間内に導入し、溶媒の飽和雰囲気中で塗布液を収
容するものであることを特徴とする半導体製造装置。(1) A semiconductor manufacturing apparatus that includes a solvent container with a built-in heater, a trap, and a coating liquid container, and performs spin coating using the coating liquid in the coating liquid container, wherein the solvent container is equipped with a built-in heater. It promotes the generation of solvent vapor and causes the introduced gas to contain the vapor of the coating liquid solvent.The trap cools the gas containing the coating liquid solvent vapor and creates a saturated state of solvent vapor. 1. A semiconductor manufacturing apparatus, characterized in that the coating liquid container introduces a gas containing saturated coating liquid solvent vapor into a closed space and stores the coating liquid in a solvent saturated atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15218190A JPH0443630A (en) | 1990-06-11 | 1990-06-11 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15218190A JPH0443630A (en) | 1990-06-11 | 1990-06-11 | Semiconductor manufacturing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0443630A true JPH0443630A (en) | 1992-02-13 |
Family
ID=15534826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15218190A Pending JPH0443630A (en) | 1990-06-11 | 1990-06-11 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0443630A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5401316A (en) * | 1992-10-15 | 1995-03-28 | Tokyo Electron Limited | Method and apparatus for hydrophobic treatment |
| JP2007142133A (en) * | 2005-11-18 | 2007-06-07 | Tokyo Ohka Kogyo Co Ltd | Resist dilution system |
| JP2013153063A (en) * | 2012-01-25 | 2013-08-08 | Tokyo Electron Ltd | Liquid processing apparatus |
| JP2015018966A (en) * | 2013-07-11 | 2015-01-29 | 大日本印刷株式会社 | Imprint apparatus and imprint method |
| JP2018056587A (en) * | 2017-12-08 | 2018-04-05 | 大日本印刷株式会社 | Imprint apparatus and imprint method |
-
1990
- 1990-06-11 JP JP15218190A patent/JPH0443630A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5401316A (en) * | 1992-10-15 | 1995-03-28 | Tokyo Electron Limited | Method and apparatus for hydrophobic treatment |
| JP2007142133A (en) * | 2005-11-18 | 2007-06-07 | Tokyo Ohka Kogyo Co Ltd | Resist dilution system |
| JP2013153063A (en) * | 2012-01-25 | 2013-08-08 | Tokyo Electron Ltd | Liquid processing apparatus |
| JP2015018966A (en) * | 2013-07-11 | 2015-01-29 | 大日本印刷株式会社 | Imprint apparatus and imprint method |
| JP2018056587A (en) * | 2017-12-08 | 2018-04-05 | 大日本印刷株式会社 | Imprint apparatus and imprint method |
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