JP3532066B2 - Liquid source vapor deposition method and apparatus - Google Patents
Liquid source vapor deposition method and apparatusInfo
- Publication number
- JP3532066B2 JP3532066B2 JP11326397A JP11326397A JP3532066B2 JP 3532066 B2 JP3532066 B2 JP 3532066B2 JP 11326397 A JP11326397 A JP 11326397A JP 11326397 A JP11326397 A JP 11326397A JP 3532066 B2 JP3532066 B2 JP 3532066B2
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- liquid raw
- liquid
- atomized
- holding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000007788 liquid Substances 0.000 title claims description 269
- 238000007740 vapor deposition Methods 0.000 title claims description 34
- 238000000034 method Methods 0.000 title claims description 19
- 239000002994 raw material Substances 0.000 claims description 260
- 239000012159 carrier gas Substances 0.000 claims description 48
- 238000000889 atomisation Methods 0.000 claims description 38
- 239000007921 spray Substances 0.000 claims description 29
- 239000007789 gas Substances 0.000 claims description 28
- 239000011344 liquid material Substances 0.000 claims description 26
- 239000006185 dispersion Substances 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 5
- 238000005086 pumping Methods 0.000 claims description 5
- 239000003595 mist Substances 0.000 claims description 2
- 239000013064 chemical raw material Substances 0.000 claims 2
- 208000024891 symptom Diseases 0.000 claims 1
- 230000008016 vaporization Effects 0.000 claims 1
- 239000006200 vaporizer Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemically Coating (AREA)
- Semiconductor Memories (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体製造装置の
ための液体原料の蒸着装置および方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for depositing a liquid material for a semiconductor manufacturing apparatus.
【０００２】[0002]
【従来の技術】近年、半導体の記憶保持動作が必要な随
時書き込み／読み出しメモリー（以下、Ｄ−ＲＡＭと示
す）の集積度の向上に伴い、メモリーセル部のキャパシ
タ容量の向上およびチップ面積の縮小が課題となってい
る。2. Description of the Related Art In recent years, as the degree of integration of an occasional write / read memory (hereinafter referred to as D-RAM) that requires a memory storage operation of a semiconductor has been improved, the capacity of a memory cell portion has been improved and the chip area has been reduced. Is an issue.
【０００３】一般に、キャパシタ容量Ｃは、Ｃ＝ε・
（Ｓ／ｄ）（Ｃ：キャパシタ容量、ε：誘電率、Ｓ：キ
ャパシタ面積、ｄ：キャパシタ厚さ）で示され、チップ
面積の縮小には、キャパシタ面積を縮小することが必須
であり、またキャパシタ厚さを再現性良く制御すること
は限界に達してきた。そこで、キャパシタ容量を増加さ
せるため誘電率の高いＢＳＴ等を使用することが検討さ
れている。Generally, the capacitance C of a capacitor is C = ε ·
(S / d) (C: capacitor capacity, ε: dielectric constant, S: capacitor area, d: capacitor thickness), and it is essential to reduce the capacitor area in order to reduce the chip area. Reproducible control of capacitor thickness has reached its limit. Therefore, the use of BST or the like having a high dielectric constant is being studied in order to increase the capacitance of the capacitor.
【０００４】図６は第１の従来例を示す。これは一般に
バブリング装置と呼ばれている。液体原料容器２に液体
原料１を収容し、この液体原料１の中にキャリアガスを
導入させるためのキャリアガス導入管３を挿入し、キャ
リアガスの導入によって気泡４がはじけて原料蒸気とな
る。気相空間５に発生した原料蒸気は、ガス流出管６か
ら反応室２１に運び出される。７は液体原料容器２の蓋
である。FIG. 6 shows a first conventional example. This is generally called a bubbling device. The liquid raw material 1 is housed in the liquid raw material container 2, a carrier gas introducing pipe 3 for introducing a carrier gas into the liquid raw material 1 is inserted, and the bubbles 4 are popped by the introduction of the carrier gas to become raw material vapor. The raw material vapor generated in the gas phase space 5 is carried out from the gas outflow pipe 6 to the reaction chamber 21. Reference numeral 7 is a lid of the liquid raw material container 2.
【０００５】図７は第２の従来例を示す。この図７は特
願平６−５０８６５９２号公報に示されている従来例で
ある。液体原料１を収容した液体原料容器２の外側の底
面には、超音波振動子８が取り付けられており、液体原
料容器２を振動させて液体原料１を共振させ、液体原料
１の液面を波立たせて霧化させている。これによって原
料蒸気が気相空間５に発生し、キャリアガス導入管３か
ら導入されてガス流出管６を介して原料蒸気がキャリア
ガスに伴われて反応室２１に供給される。FIG. 7 shows a second conventional example. FIG. 7 shows a conventional example disclosed in Japanese Patent Application No. 6-5086592. An ultrasonic vibrator 8 is attached to the outer bottom surface of the liquid raw material container 2 that contains the liquid raw material 1, and the liquid raw material container 2 is vibrated to resonate the liquid raw material 1 to remove the liquid surface of the liquid raw material 1. It is rippling and atomized. As a result, raw material vapor is generated in the vapor phase space 5, introduced from the carrier gas introduction pipe 3, and supplied via the gas outflow pipe 6 to the reaction chamber 21 together with the carrier gas.
【０００６】[0006]
【発明が解決しようとする課題】図６のバブリング装置
では、液体原料１の液面が使用中に低下し、気泡４と液
体原料１の接触量が減少するにつれて発生する原料蒸気
も減少していくということと、液体原料１がキャリアガ
ス導入管３よりも液面が低下すると、液体原料１を液体
原料容器２から運び出せないことと、蒸気化しにくい液
体原料では、揮発性の高い溶媒を混ぜて蒸気化させるた
め、使用中に溶媒の方が気化し易いため、液体原料１と
溶媒の混合濃度が変化してしまい、発生する蒸気濃度が
変化してしまうという問題点を有している。In the bubbling apparatus of FIG. 6, the liquid surface of the liquid raw material 1 is lowered during use, and the raw material vapor generated is also reduced as the contact amount between the bubbles 4 and the liquid raw material 1 is reduced. When the liquid raw material 1 has a liquid level lower than that of the carrier gas introducing pipe 3, the liquid raw material 1 cannot be carried out from the liquid raw material container 2, and in the liquid raw material which is difficult to vaporize, a highly volatile solvent is used. Since the solvent is more easily vaporized during use because it is mixed and vaporized, there is a problem that the mixed concentration of the liquid raw material 1 and the solvent changes, and the generated vapor concentration changes. .
【０００７】図７の従来例では、液体原料１の量が使用
中に低下すると、液体が超音波振動子８により共振しに
くくなり、発生する原料蒸気の量が変化してしまうこと
と、蒸気化しにくい液体原料では揮発性の高い溶媒を混
合する必要があることと、使用中に溶媒が先に蒸発し液
体原料１と溶媒の混合比が変化し、発生する原料蒸気の
混合濃度と蒸気の発生量が低下してしまうという問題点
を有している。In the conventional example shown in FIG. 7, when the amount of the liquid raw material 1 decreases during use, the liquid is less likely to resonate with the ultrasonic oscillator 8 and the amount of the raw material vapor generated changes. It is necessary to mix a solvent with high volatility in a liquid raw material that is difficult to change, and the solvent evaporates first during use to change the mixing ratio of the liquid raw material 1 and the solvent, resulting in a mixed concentration of raw material vapor and a generated vapor. There is a problem in that the amount generated is reduced.
【０００８】本発明は、液面低下による原料蒸気発生の
低下、すなわち原料蒸気の発生量の不安定化をなくし、
溶媒など２種以上の液体を混合したとき、経時的に混合
液の濃度が変化したり、混合比が変化して原料蒸気の発
生量や混合比、濃度が変化することを防ぎ、かつ安定し
て液体原料を被処理体の上に蒸着させることを目的とす
る。The present invention eliminates a decrease in the generation of raw material vapor due to a decrease in liquid level, that is, an instability in the amount of raw material vapor generated,
When two or more liquids such as a solvent are mixed, it is possible to prevent changes in the concentration of the mixed liquid over time and changes in the mixing ratio that change the amount of raw material vapor generated, the mixing ratio, and the concentration, and to stabilize the mixture. The purpose is to deposit the liquid raw material on the object to be processed.
【０００９】[0009]
【課題を解決するための手段】この課題を解決するた
め、本発明にかかる液体原料霧化方法は、液体原料を直
接に霧化させて混合容器の内部に原料蒸気を発生させ、
これをキャリアガスに含ませてガス流出管より反応室内
に導入するものである。また、反応室の内部に原料蒸気
を直接に発生させて被処理体の上に蒸着させるものであ
る。In order to solve this problem, a liquid raw material atomizing method according to the present invention directly atomizes a liquid raw material to generate raw material vapor inside a mixing container,
This is contained in a carrier gas and introduced into the reaction chamber through a gas outflow pipe. Further, the raw material vapor is directly generated inside the reaction chamber to be vapor-deposited on the object to be processed.
【００１０】この本発明によると、被処理体の上に安定
して液体原料を蒸着できる。According to the present invention, the liquid raw material can be stably deposited on the object to be processed.
【００１１】[0011]
【発明の実施の形態】請求項１記載の液体原料の蒸着装
置は、被処理体を保持する反応室と、この被処理体に蒸
着させる液体原料を霧化する霧化器と、この霧化器に前
記液体原料を供給する液体原料供給手段と、霧化された
前記液体原料を保持する霧化原料保持容器と、この霧化
原料保持容器に保持された霧化液体原料を前記反応室に
導入するためのキャリアガス供給手段とを設け、前記液
体原料供給手段は、前記液体原料を保持する液体原料容
器と、前記霧化器の液体原料流入部に下端が接続された
中間槽と、この中間槽の液面を前記液体原料の霧化速度
に応じた高さに保つ流量調整弁とを有し、この流量調整
弁が、前記液体原料容器から前記中間槽へ滴下させる量
もしくは前記中間槽から前記霧化器への流量を調節する
ことを特徴とする。DETAILED DESCRIPTION OF THE INVENTION instrumentation deposition of the liquid material of claim 1, wherein
The chamber is equipped with a reaction chamber that holds the object to be processed and the object to be processed.
The atomizer that atomizes the liquid material to be worn, and the atomizer
Liquid source supply means for supplying liquid source, and atomized
Atomization material holding container for holding the liquid material, and the atomization
The atomized liquid raw material held in the raw material holding container is fed to the reaction chamber.
A carrier gas supply means for introducing the liquid is provided.
The body material supply means is a liquid material container that holds the liquid material.
And the lower end was connected to the liquid raw material inflow part of the atomizer.
The atomization speed of the liquid raw material
It has a flow rate adjusting valve to keep the height according to
The amount that the valve drops from the liquid raw material container to the intermediate tank
Alternatively, the flow rate from the intermediate tank to the atomizer is adjusted .
【００１２】請求項２記載の液体原料の蒸着装置は、被
処理体を保持し、キャリアガスを導入する導入口と排気
口とを有する反応室と、この反応室に取り付けられ、前
記被処理体に蒸着させる液体原料を霧化する霧化器と、
この霧化器に前記液体原料を供給する液体原料供給手段
とを設け、前記液体原料供給手段は、前記液体原料を保
持する液体原料容器と、前記霧化器の液体原料流入部に
下端が接続された中間槽と、この中間槽の液面を前記液
体原料の霧化速度に応じた高さに保つ流量調整弁とを有
し、この流量調整弁が、前記液体原料容器から前記中間
槽へ滴下させる量もしくは前記中間槽から前記霧化器へ
の流量を調節し、霧化された前記液体原料を前記反応室
の内部でキャリアガスと混合させることを特徴とする。According to a second aspect of the present invention, there is provided a liquid source vapor deposition device,
Inlet and exhaust for holding the processing body and introducing carrier gas
A reaction chamber having a mouth and attached to this reaction chamber,
An atomizer for atomizing a liquid material to be vapor-deposited on the object to be processed,
Liquid raw material supply means for supplying the liquid raw material to the atomizer
And the liquid raw material supply means holds the liquid raw material.
The liquid raw material container to hold and the liquid raw material inflow part of the atomizer
The intermediate tank to which the lower end is connected and the liquid level of this intermediate tank
Equipped with a flow rate adjustment valve that maintains the height according to the atomization speed of body material
However, this flow rate adjustment valve is
Amount to drop into the tank or from the intermediate tank to the atomizer
The flow rate of the atomized liquid raw material to the reaction chamber
It is characterized in that it is mixed with a carrier gas inside .
【００１３】請求項３記載の液体原料の蒸着装置は、被
処理体を保持する反応室と、この被処理体に蒸着させる
液体原料と霧化用気体を受け入れてこの液体原料を霧化
させる噴霧ノズルと、この噴霧ノズルに前記液体原料を
供給する液体原料供給手段と、霧化された前記液体原料
を保持する霧化原料保持容器と、この霧化原料保持容器
に保持された霧化液体原料を前記反応室に導入するため
のキャリアガス供給手段とを設け、前記液体原料供給手
段は、前記液体原料を保持する液体原料容器と、前記噴
霧ノズルの液体原料流入部に下端が接続された中間槽
と、この中間槽の液面を前記液体原料の霧化速度に応じ
た高さに保つ流量調整弁とを有し、この流量調整弁が、
前記液体原料容器から前記中間槽へ滴下させる量もしく
は前記中間槽から前記噴霧ノズルへの流量を調節するこ
とを特徴とする。[0013] deposition apparatus of the liquid material according to the third aspect, the
A reaction chamber that holds the object to be processed and vapor deposition on the object to be processed
Atomize this liquid raw material by accepting the liquid raw material and atomizing gas
A spray nozzle that causes the liquid raw material to the spray nozzle.
Liquid raw material supply means for supplying, and the atomized liquid raw material
Atomization raw material holding container for holding and this atomization raw material holding container
For introducing the atomized liquid raw material held in the reaction chamber into the reaction chamber
And a carrier gas supply means for
The stage includes a liquid raw material container for holding the liquid raw material, and the liquid jet container.
Intermediate tank whose lower end is connected to the liquid raw material inflow part of the mist nozzle
The liquid level of this intermediate tank according to the atomization speed of the liquid raw material.
It has a flow rate control valve to keep the height
The amount dropped from the liquid raw material container to the intermediate tank
It is characterized by the this <br/> to adjust the flow rate to the spray nozzle from the intermediate tank.
【００１４】請求項４記載の液体原料の蒸着装置は、被
処理体を保持し、キャリアガスを導入する導入口と排気
口とを有する反応室と、この反応室に取り付けられ、前
記被処理体に蒸着させる液体原料と霧化用気体を受け入
れてこの液体原料を霧化させる噴霧ノズルと、この噴霧
ノズルに前記液体原料を供給する液体原料供給手段とを
設け、前記液体原料供給手段は、前記液体原料を保持す
る液体原料容器と、前記噴霧ノズルの液体原料流入部に
下端が接続された中間槽と、この中間槽の液面を前記液
体原料の霧化速度に応じた高さに保つ流量調整弁とを有
し、この流量調整弁が、前記液体原料容器から前記中間
槽へ滴下させる量もしくは前記中間槽から前記噴霧ノズ
ルへの流量を調節し、霧化された前記液体原料を前記反
応室の内部でキャリアガスと混合させることを特徴とす
る。According to a fourth aspect of the present invention, there is provided a liquid source vapor deposition device,
Inlet and exhaust for holding the processing body and introducing carrier gas
A reaction chamber having a mouth and attached to this reaction chamber,
Receives liquid raw material to be vapor-deposited on the object to be processed and atomizing gas
Spray nozzle that atomizes this liquid raw material and this spray
Liquid raw material supply means for supplying the liquid raw material to the nozzle
And the liquid raw material supply means holds the liquid raw material.
Liquid raw material container and the liquid raw material inflow part of the spray nozzle
The intermediate tank to which the lower end is connected and the liquid level of this intermediate tank
Equipped with a flow rate adjustment valve that maintains the height according to the atomization speed of body material
However, this flow rate adjustment valve is
Amount to be dropped into the tank or the spray nozzle from the intermediate tank
The flow rate of the atomized liquid raw material
It is characterized in that it is mixed with a carrier gas inside the reaction chamber .
【００１５】請求項５記載の液体原料の蒸着装置は、被
処理体を保持する反応室と、この被処理体に蒸着させる
液体原料を霧化する霧化器と、この霧化器に前記液体原
料を供給する液体原料供給手段と、霧化された前記液体
原料を保持する霧化原料保持容器と、この霧化原料保持
容器に保持された霧化液体原料を一定流量前記反応室に
導入するためのキャリアガス供給手段と、前記霧化原料
保持容器のキャリアガス導入部に分散網とを設けたこと
を特徴とする。The liquid raw material vapor deposition apparatus according to claim 5 is
A reaction chamber that holds the object to be processed and vapor deposition on the object to be processed
An atomizer for atomizing the liquid raw material, and the liquid source in the atomizer.
Liquid raw material supply means for supplying a charge, and the atomized liquid
Atomized material holding container for holding raw material and this atomized material holding container
A constant flow rate of atomized liquid raw material held in the container to the reaction chamber
Carrier gas supply means for introducing the atomized raw material
A dispersion network is provided in the carrier gas introduction part of the holding container .
【００１６】請求項６記載の液体原料の蒸着装置は、被
処理体を保持する反応室と、この被処理体に蒸着させる
液体原料と霧化用気体を受け入れてこの液体原料を霧化
させる噴霧ノズルと、この噴霧ノズルに前記液体原料を
供給する液体原料供給手段と、霧化された前記液体原料
を保持する霧化原料保持容器と、この霧化原料保持容器
に保持された霧化液体原料を一定流量前記反応室に導入
するためのキャリアガス供給手段と、前記霧化原料保持
容器のキャリアガス導入部に分散網とを設けたことを特
徴とする。According to a sixth aspect of the present invention, there is provided a liquid source vapor deposition apparatus,
A reaction chamber that holds the object to be processed and vapor deposition on the object to be processed
Atomize this liquid raw material by accepting the liquid raw material and atomizing gas
A spray nozzle that causes the liquid raw material to the spray nozzle.
Liquid raw material supply means for supplying, and the atomized liquid raw material
Atomization raw material holding container for holding and this atomization raw material holding container
The atomized liquid raw material held in the chamber is introduced into the reaction chamber at a constant flow rate.
Carrier gas supply means for maintaining the atomized raw material
A dispersion network is provided at the carrier gas introduction portion of the container .
【００１７】請求項７記載の液体原料の蒸着装置は、上
記した請求項１、３のいずれかに記載の構成において、
霧化原料保持容器のキャリアガス導入部に分散網を設け
たことを特徴とする。The deposition apparatus of the liquid material according to claim 7, wherein the above
The configuration according to any one of claims 1 and 3 described above,
Dispersion network is installed in the carrier gas introduction part of the atomization raw material holding container.
Characterized in that was.
【００１８】請求項８記載の液体原料の蒸着装置は、被
処理体を保持する反応室と、この被処理体に蒸着させる
液体原料と霧化用気体を受け入れてこの液体原料を霧化
させる噴霧ノズルと、この噴霧ノズルに前記液体原料を
供給する液体原料供給手段と、霧化された前記液体原料
を保持する霧化原料保持容器と、この霧化原料保持容器
に保持された霧化液体原料を前記反応室に導入するため
のキャリアガス供給手段と、前記霧化原料保持容器のキ
ャリアガス導入部に分散網とを設け、前記液体原料供給
手段が、液体原料を圧送可能なポンプもしくは液体マス
フローコントローラであることを特徴とする。The deposition apparatus of the liquid material according to claim 8, the
A reaction chamber that holds the object to be processed and vapor deposition on the object to be processed
Atomize this liquid raw material by accepting the liquid raw material and atomizing gas
A spray nozzle that causes the liquid raw material to the spray nozzle.
Liquid raw material supply means for supplying, and the atomized liquid raw material
Atomization raw material holding container for holding and this atomization raw material holding container
For introducing the atomized liquid raw material held in the reaction chamber into the reaction chamber
Carrier gas supply means and the key of the atomizing material holding container.
Supplying the liquid raw material by installing a dispersion network in the carrier gas introduction part
The means is a pump or liquid mass capable of pumping the liquid raw material.
It is a flow controller .
【００１９】請求項９記載の液体原料の蒸着装置は、被
処理体を保持する反応室と、この被処理体に蒸着させる
液体原料を霧化する霧化器と、この霧化器に前記液体原
料を供給する液体原料供給手段と、霧化された前記液体
原料を保持する霧化原料保持容器と、この霧化原料保持
容器に保持された霧化液体原料を一定流量前記反応室に
導入するためのキャリアガス供給手段と、前記霧化原料
保持容器のキャリアガス導入部に分散網とを設け、前記
液体原料供給手段が、液体原料を圧送可能なポンプもし
くは液体マスフローコントローラであることを特徴とす
る。According to a ninth aspect of the present invention, there is provided a liquid source vapor deposition apparatus,
A reaction chamber that holds the object to be processed and vapor deposition on the object to be processed
An atomizer for atomizing the liquid raw material, and the liquid source in the atomizer.
Liquid raw material supply means for supplying a charge, and the atomized liquid
Atomized material holding container for holding raw material and this atomized material holding container
A constant flow rate of atomized liquid raw material held in the container to the reaction chamber
Carrier gas supply means for introducing the atomized raw material
The carrier gas introduction part of the holding container is provided with a dispersion network,
If the liquid raw material supply means is a pump capable of pumping the liquid raw material,
It is a liquid mass flow controller .
【００２０】請求項１０記載の液体原料の蒸着方法は、
被処理体に蒸着する液体原料を中間槽に導入する工程
と、この中間槽に導入された前記液体原料を供給する工
程と、供給されたこの液体原料を霧化する工程と、霧化
されたこの液体原料を保持する工程と、前記保持された
霧化液体原料をキャリアガスと混合する工程と、前記混
合された霧化液体原料とキャリアガスを反応室に導入す
る工程と、前記被処理体に膜を蒸着させる工程とを有
し、前記中間槽の液面を前記液体原料の霧化速度に応じ
た高さに保つことを特徴とする。The liquid source vapor deposition method according to claim 10 is:
Step of introducing the liquid raw material to be vapor-deposited on the object to be processed into the intermediate tank
And a process for supplying the liquid raw material introduced into this intermediate tank.
The process of atomizing the supplied liquid raw material and the atomization
A step of holding the liquid raw material
A step of mixing the atomized liquid raw material with a carrier gas;
Introduce the combined atomized liquid raw material and carrier gas into the reaction chamber
And a step of depositing a film on the object to be processed.
The liquid level of the intermediate tank according to the atomization speed of the liquid raw material.
It is characterized by maintaining a high height .
【００２１】請求項１１記載の液体原料の蒸着方法は、
被処理体に蒸着する液体原料を中間槽に導入する工程
と、この中間槽に導入された前記液体原料を供給する工
程と、供給されたこの液体原料を霧化する工程と、霧化
されたこの液体原料を保持する工程と、前記保持された
霧化液体原料を反応室に導入する工程と、キャリアガス
を前記反応室に導入する工程と、前記被処理体に膜を蒸
着させる工程とを有し、前記中間槽の液面を前記液体原
料の霧化速度に応じた高さに保つことを特徴とする。A method for vapor deposition of a liquid raw material according to claim 11 is
Step of introducing the liquid raw material to be vapor-deposited on the object to be processed into the intermediate tank
And a process for supplying the liquid raw material introduced into this intermediate tank.
The process of atomizing the supplied liquid raw material and the atomization
A step of holding the liquid raw material
The process of introducing atomized liquid raw material into the reaction chamber and the carrier gas
Is introduced into the reaction chamber, and a film is vaporized on the object to be treated.
And the step of attaching the liquid surface of the intermediate tank to the liquid source.
The feature is that the height is maintained according to the atomization speed of the material.
【００２２】請求項１２記載の液体原料の蒸着方法は、
上記した請求項１０、１１のいずれかに記載の構成にお
いて、中間槽の液面を液体原料の霧化速度に応じた高さ
に保つ方法が、液体原料を中間槽に導入する流量もしく
はこの中間槽から供給する流量を調整することを特徴と
する。A liquid source vapor deposition method according to claim 12 is:
The configuration according to any one of claims 10 and 11 described above.
The height of the liquid level in the intermediate tank according to the atomization speed of the liquid raw material.
The method of keeping the liquid in the intermediate tank is
Is characterized by adjusting the flow rate supplied from this intermediate tank .
【００２３】以下、本発明の液体原料の蒸着方法を、図
１〜図５に示す具体的な実施の形態に基づいて説明す
る。The liquid material vapor deposition method of the present invention will be described below with reference to specific embodiments shown in FIGS.
【００２４】（実施の形態１）図１は（実施の形態１）
を示す。液体原料容器２に保持された液体原料１は、流
量調整弁１３により滴下流量が調整され中間槽１４に導
入される。中間槽１４に一旦保持された液体原料１は、
液体原料供給管１６を介して超音波霧化器１１に供給さ
れる。(Embodiment 1) FIG. 1 shows (Embodiment 1)
Indicates. The liquid raw material 1 held in the liquid raw material container 2 is introduced into the intermediate tank 14 after the dropping flow rate is adjusted by the flow rate adjusting valve 13. The liquid raw material 1 once held in the intermediate tank 14 is
It is supplied to the ultrasonic atomizer 11 via the liquid raw material supply pipe 16.
【００２５】超音波霧化器１１は霧化原料保持容器１５
に設置されており、超音波霧化器１１により霧化されて
霧化原料保持容器１５に送り込まれた原料蒸気は、霧化
原料保持容器１５においてキャリアガス導入管３より導
入されたキャリアガスと均一に混合される。霧化原料保
持容器１５のキャリアガス導入部には分散網１７が設置
されている。１８はドレイン管，１９はドレインタンク
である。The ultrasonic atomizer 11 is a container 15 for holding atomized raw materials.
The raw material vapor, which is installed in the atomization raw material holding container 15 after being atomized by the ultrasonic atomizer 11 and the carrier gas introduced from the carrier gas introducing pipe 3 in the atomization raw material holding container 15. Mix evenly. A dispersion net 17 is installed in the carrier gas introduction part of the atomizing material holding container 15. Reference numeral 18 is a drain pipe, and 19 is a drain tank.
【００２６】キャリアガスと均一に混合された霧化原料
は、ガス流出管６を介して反応室２１へ供給されて、こ
の反応室２１にセットされている被処理体２２に蒸着さ
れる。The atomized raw material uniformly mixed with the carrier gas is supplied to the reaction chamber 21 through the gas outflow pipe 6 and deposited on the object 22 to be treated set in the reaction chamber 21.
【００２７】超音波霧化器１１は、超音波振動子によっ
て超音波振動するホーン２６の先端部の近傍に霧化させ
たい液体を供給するように構成されたもので、市販品と
しては、超音波工業株式会社製の型番ＦＳＵ−１０など
を使用できる。液体原料流入部２７は、超音波振動する
前記ホーン２６の先端部の近傍に液体原料を供給するよ
うに形成されている。The ultrasonic atomizer 11 is configured to supply the liquid to be atomized to the vicinity of the tip of the horn 26 that is ultrasonically vibrated by the ultrasonic vibrator. A model number FSU-10 manufactured by Sonic Industrial Co., Ltd. can be used. The liquid raw material inflow portion 27 is formed so as to supply the liquid raw material near the tip of the horn 26 that vibrates ultrasonically.
【００２８】超音波霧化器１１から中間槽１４の液面ま
での高さＨ、重力加速度をｇ、中間槽１４からの液体原
料１の流出速度ｖとすると、ｖ ＝ （２ｇ・Ｈ）0.5
表すことができ、霧化速度をｖ′とすると、ｖ′＝
α・ｖ と表すことができる。αは定数で、液体原料供
給管１６の圧損や液体原料１の粘度などで決まる。Assuming that the height H from the ultrasonic atomizer 11 to the liquid surface of the intermediate tank 14 is g, the gravitational acceleration is g, and the outflow speed v of the liquid raw material 1 from the intermediate tank 14 is v = (2 g · H) 0.5
If the atomization speed is v ', then v' =
It can be expressed as α · v. α is a constant and is determined by the pressure loss of the liquid raw material supply pipe 16 and the viscosity of the liquid raw material 1.
【００２９】霧化原料保持容器１５のキャリアガス導入
部に分散網１７を設置することで、超音波霧化器１１に
より霧化された液体原料１をより効率的に混合すること
ができた。By installing the dispersion net 17 in the carrier gas introduction portion of the atomizing material holding container 15, the liquid material 1 atomized by the ultrasonic atomizer 11 could be mixed more efficiently.
【００３０】ここでは液体原料１としてＰｂＺｒＴｉＯ
系のゾル−ゲル溶液を用いて、被処理体の上に強誘電体
薄膜を形成した。この実施の形態によると、被処理体の
上に形成された薄膜は、原料液体と組成がずれることな
く良好な特性を有した。Here, PbZrTiO 3 is used as the liquid raw material 1.
A ferroelectric thin film was formed on the object to be processed using a sol-gel solution of the system. According to this embodiment, the thin film formed on the object to be processed had good characteristics without composition shift from the raw material liquid.
【００３１】液体原料１の霧化量に応じ、中間槽１４を
設置し流量調整弁１３により中間槽１４の液面を液体原
料１の霧化速度に応じた高さに保つことで、液体原料１
の霧化効率がさらに向上することができる。超音波霧化
器１１から中間槽１４の液面までの高さＨが４０ｍｍ〜
１００ｍｍで良好な霧化効率が得られた。According to the atomization amount of the liquid raw material 1, the intermediate tank 14 is installed, and the flow rate adjusting valve 13 keeps the liquid surface of the intermediate tank 14 at a height corresponding to the atomization speed of the liquid raw material 1. 1
The atomization efficiency of can be further improved. The height H from the ultrasonic atomizer 11 to the liquid surface of the intermediate tank 14 is 40 mm ~
Good atomization efficiency was obtained at 100 mm.
【００３２】また、中間槽１４を設置することにより、
液体原料の使用効率＝（ドレイン容器内に溜まった液
量）／（初期液体原料量）×１００〔％〕が、中間槽１
４を使用しない場合が７５％であったものと比較し、９
８％に向上した。By installing the intermediate tank 14,
Use efficiency of liquid raw material = (amount of liquid accumulated in drain container) / (initial amount of liquid raw material) × 100 [%] is the intermediate tank 1
Compared with 75% when 4 is not used, 9
It improved to 8%.
【００３３】（実施の形態２）図２は（実施の形態２）
を示す。この（実施の形態２）では超音波霧化器１１へ
の液体原料１の供給方法は（実施の形態１）と同様であ
るが、超音波霧化器１１が反応室２１に直接設置されて
おり、反応室２１の中の支持台２３の上に載置された被
処理体２２の上に直接霧化された液体原料１が蒸着され
る。霧化された液体原料１が反応室２１内に滞留するの
を防ぐため、反応室２１にはキャリアガス導入口２４と
排気口２５が設けられている。(Second Embodiment) FIG. 2 shows a second embodiment.
Indicates. In this (Embodiment 2), the method of supplying the liquid raw material 1 to the ultrasonic atomizer 11 is the same as in (Embodiment 1), but the ultrasonic atomizer 11 is directly installed in the reaction chamber 21. Thus, the atomized liquid raw material 1 is vapor-deposited directly on the object 22 to be processed placed on the support 23 in the reaction chamber 21. In order to prevent the atomized liquid raw material 1 from staying in the reaction chamber 21, the reaction chamber 21 is provided with a carrier gas introduction port 24 and an exhaust port 25.
【００３４】液体原料１としてＰｂＺｒＴｉＯ系のゾル
−ゲル溶液を用いて、被処理体２２の上に強誘電体薄膜
を形成した。本発明を使用することにより、被処理体２
２に形成された薄膜は、原料溶液と組成がずれることな
く良好な特性を有した。A PbZrTiO 3 sol-gel solution was used as the liquid raw material 1, and a ferroelectric thin film was formed on the object 22 to be processed. By using the present invention, the object to be processed 2
The thin film formed in No. 2 had good characteristics without deviating in composition from the raw material solution.
【００３５】また、中間槽を使用することにより、実施
の形態１から液体原料使用効率が向上していることが推
測される。さらに、反応室に直接超音波霧化器を設置し
たため、実施の形態１と比較し、成膜速度が５０％向上
した。Further, it is assumed from the first embodiment that the liquid raw material use efficiency is improved by using the intermediate tank. Further, since the ultrasonic atomizer was installed directly in the reaction chamber, the film formation rate was improved by 50% as compared with the first embodiment.
【００３６】なお、支持台２３を室温で保持して蒸着を
行ったが、ヒータを具備し加熱できる構造をとっても良
く、また直流電源や高周波電源を接続して被処理体に電
力を印加できるようにしても良い。Although vapor deposition was carried out while the support table 23 was held at room temperature, a heater may be provided for heating, and a DC power source or a high frequency power source may be connected to apply power to the object to be processed. You can
【００３７】上記の各実施の形態では、流量調整弁１３
により滴下流量を調整して中間槽１４を介して超音波霧
化器１１に液体原料１を供給したが、中間槽１４から超
音波霧化器１１の間に流量調整弁１３と同様の流量を調
整する手段を設けても同様の効果を期待できる。In each of the above embodiments, the flow rate adjusting valve 13
The liquid flow rate 1 was supplied to the ultrasonic atomizer 11 through the intermediate tank 14 by adjusting the dripping flow rate by using the same, but a flow rate similar to that of the flow rate adjusting valve 13 was provided between the intermediate tank 14 and the ultrasonic atomizer 11. The same effect can be expected even if a means for adjusting is provided.
【００３８】上記の各実施の形態の液体原料容器２，中
間槽１４は上部が開放されていたが、それぞれは密閉構
造であっても同様である。
（実施の形態３）図３は（実施の形態３）を示す。Although the upper portions of the liquid raw material container 2 and the intermediate tank 14 of each of the above-mentioned embodiments are open, the same applies even if each has a closed structure. (Embodiment 3) FIG. 3 shows (Embodiment 3).
【００３９】この（実施の形態３）は（実施の形態１）
の変形例を示している。（実施の形態１）では超音波霧
化器１１を使用して液体原料１を霧化させたが、この
（実施の形態３）では、（実施の形態１）の超音波霧化
器１１に代わって霧化用気体１２と液体原料１とを受け
入れる噴霧ノズル１０が霧化原料保持容器１５に設けら
れている。このほかの構成は（実施の形態１）と同一で
ある。なお、霧化用気体１２としては高圧窒素が使用さ
れており、噴霧ノズル１０への霧化用気体１２の吹き込
み量は圧力調整器２８によって調整して噴霧ノズル１０
での霧化量を調節するように構成されている。This (Embodiment 3) is (Embodiment 1)
Shows a modified example of. In (Embodiment 1), the liquid raw material 1 is atomized using the ultrasonic atomizer 11, but in this (Embodiment 3), the ultrasonic atomizer 11 of (Embodiment 1) is used. Instead, a spray nozzle 10 for receiving the atomizing gas 12 and the liquid raw material 1 is provided in the atomizing raw material holding container 15. Other configurations are the same as those in (Embodiment 1). Note that high-pressure nitrogen is used as the atomizing gas 12, and the amount of the atomizing gas 12 blown into the atomizing nozzle 10 is adjusted by the pressure regulator 28.
It is configured to adjust the atomization amount at.
【００４０】このように構成したため、（実施の形態
１）と同様に、被処理体の上に形成された薄膜は、原料
液体と組成がずれることなく良好な特性を有した。
（実施の形態４）図４は（実施の形態４）を示す。With this structure, as in the first embodiment, the thin film formed on the object to be processed had good characteristics without composition shift from the raw material liquid. (Embodiment 4) FIG. 4 shows (Embodiment 4).
【００４１】この（実施の形態４）は（実施の形態２）
の変形例を示している。（実施の形態２）では超音波霧
化器１１を使用して液体原料１を霧化させたが、この
（実施の形態４）では、（実施の形態１）の超音波霧化
器１１に代わって霧化用気体１２と液体原料１とを受け
入れる噴霧ノズル１０が反応室２１に設けられている。
このほかの構成は（実施の形態２）と同一である。な
お、霧化用気体１２としては高圧窒素が使用されてお
り、噴霧ノズル１０への霧化用気体１２の吹き込み量は
圧力調整器２８によって調整して噴霧ノズル１０での霧
化量を調節するように構成されている。This (Embodiment 4) is (Embodiment 2)
Shows a modified example of. In (Embodiment 2), the liquid raw material 1 is atomized using the ultrasonic atomizer 11, but in this (Embodiment 4), the ultrasonic atomizer 11 of (Embodiment 1) is used. Instead, the atomizing nozzle 10 that receives the atomizing gas 12 and the liquid raw material 1 is provided in the reaction chamber 21.
The other configuration is the same as that of the second embodiment. High-pressure nitrogen is used as the atomizing gas 12, and the amount of the atomizing gas 12 blown into the atomizing nozzle 10 is adjusted by the pressure adjuster 28 to adjust the atomizing amount in the atomizing nozzle 10. Is configured.
【００４２】このように構成したため、（実施の形態
２）と同様に、被処理体の上に形成された薄膜は、原料
液体と組成がずれることなく良好な特性を有した。
（実施の形態５）図５は（実施の形態５）を示す。With this structure, the thin film formed on the object to be processed had good characteristics without composition shift from the raw material liquid, as in the second embodiment. (Embodiment 5) FIG. 5 shows (Embodiment 5).
【００４３】この（実施の形態５）は（実施の形態４）
の変形例を示している。この（実施の形態５）では、噴
霧ノズル１０には液体マスフローコントローラ２９ａを
介して直接に液体原料１を供給し、液体マスフローコン
トローラ２９ｂを介して霧化用気体１２の吹き込み量を
調節している点だけが（実施の形態４）とは異なってい
る。This (Fifth Embodiment) is (Fourth Embodiment)
Shows a modified example of. In this (Embodiment 5), the liquid raw material 1 is directly supplied to the spray nozzle 10 via the liquid mass flow controller 29a, and the injection amount of the atomizing gas 12 is adjusted via the liquid mass flow controller 29b. Only the points are different from (Embodiment 4).
【００４４】このように液体マスフローコントローラ２
９ａ，２９ｂを使用することによって（実施の形態４）
よりも高精度で液体原料１を噴霧ノズル１０に供給する
ことができ、成膜速度の制御性および蒸着膜の均一性が
向上した。Thus, the liquid mass flow controller 2
By using 9a and 29b (Embodiment 4)
The liquid raw material 1 can be supplied to the spray nozzle 10 with higher accuracy, and the controllability of the film formation rate and the uniformity of the deposited film are improved.
【００４５】この（実施の形態５）では、噴霧ノズル１
０への液体原料１の入力経路に液体マスフローコントロ
ーラ２９ａを設けたが、液体原料１が高粘度である場合
には液体マスフローコントローラ２９ａに代えて液体原
料１が圧送可能なポンプを使用することもできる。In this (Embodiment 5), the spray nozzle 1
Although the liquid mass flow controller 29a is provided in the input path of the liquid raw material 1 to 0, when the liquid raw material 1 has high viscosity, a pump capable of pumping the liquid raw material 1 may be used instead of the liquid mass flow controller 29a. it can.
【００４６】このように構成したため、（実施の形態
４）と同様に、被処理体の上に形成された薄膜は、原料
液体と組成がずれることなく良好な特性を有した。
（実施の形態６）（実施の形態１）と（実施の形態２）
では、圧力調整器２８を介して霧化用気体１２を噴霧ノ
ズル１０へ吹き込んだが、（実施の形態５）で使用した
液体マスフローコントローラを圧力調整器２８に代えて
使用して霧化用気体１２として高圧窒素を噴霧ノズル１
０へ吹き込んでも同様の効果を期待できる。With this structure, as in (Embodiment 4), the thin film formed on the object to be treated had good characteristics without deviation in composition from the raw material liquid. (Embodiment 6) (Embodiment 1) and (Embodiment 2)
Then, although the atomizing gas 12 is blown into the atomizing nozzle 10 through the pressure regulator 28, the liquid mass flow controller used in (Embodiment 5) is used instead of the pressure regulator 28, and the atomizing gas 12 is used. High pressure nitrogen as a spray nozzle 1
The same effect can be expected even if it is blown into 0.
【００４７】上記の各実施の形態の霧化用気体１２とし
て高圧窒素を使用したが、霧化用気体１２はヘリウム，
アルゴンなどのように蒸着膜の特性に悪影響を及ぼさな
い気体であれば同様に使用できる。Although high-pressure nitrogen was used as the atomizing gas 12 in each of the above embodiments, the atomizing gas 12 is helium,
Any gas that does not adversely affect the characteristics of the deposited film, such as argon, can be used similarly.
【００４８】[0048]
【発明の効果】以上のように本発明の液体原料の蒸着方
法によると、超音波霧化器により液体原料を直接に霧化
させて蒸着に使用するため、液体原料の使用効率が高
く、形成された薄膜も組成ずれのない良好な膜質が得ら
れ、特性も良好なものであるという効果を有する。As described above, according to the liquid material vapor deposition method of the present invention, since the liquid raw material is directly atomized by the ultrasonic atomizer and used for vapor deposition, the liquid raw material is highly efficiently used and formed. The obtained thin film also has an effect that a good film quality without compositional deviation can be obtained and the property is also good.
【００４９】また、本発明の液体原料の蒸着装置による
と、本発明の液体原料の蒸着方法を実現できる。Further, according to the liquid source vapor deposition apparatus of the present invention, the liquid source vapor deposition method of the present invention can be realized.
【図１】本発明の（実施の形態１）の蒸着装置の構成図FIG. 1 is a configuration diagram of a vapor deposition device according to (Embodiment 1) of the present invention.
【図２】本発明の（実施の形態２）の蒸着装置の構成図FIG. 2 is a configuration diagram of a vapor deposition device according to (Embodiment 2) of the present invention.
【図３】本発明の（実施の形態３）の蒸着装置の構成図FIG. 3 is a configuration diagram of a vapor deposition device according to (Embodiment 3) of the present invention.
【図４】本発明の（実施の形態４）の蒸着装置の構成図FIG. 4 is a configuration diagram of a vapor deposition device according to (Embodiment 4) of the present invention.
【図５】本発明の（実施の形態５）の蒸着装置の構成図FIG. 5 is a configuration diagram of a vapor deposition device according to (Embodiment 5) of the present invention.
【図６】従来の液体原料の霧化装置の構成図FIG. 6 is a block diagram of a conventional liquid material atomizer.
【図７】従来の別の従来例の液体原料の霧化装置の構成
図FIG. 7 is a block diagram of another conventional liquid material atomizing device.
１ 液体原料 ２ 液体原料容器 ３ キャリアガス導入管 ６ ガス流出管 ８ 超音波振動子 １０ 噴霧ノズル １１ 超音波霧化器 １２ 霧化用気体 １３ 流量調整弁 １４ 中間槽 １５ 霧化原料保持容器 １７ 分散網 ２１ 反応室 ２２ 被処理体 ２３ 支持台 ２８ 圧力調整器 ２９ａ，２９ｂ 液体マスフローコントローラ 1 liquid raw material 2 Liquid raw material container 3 Carrier gas inlet pipe 6 gas outflow pipe 8 Ultrasonic transducer 10 spray nozzles 11 ultrasonic atomizer 12 Atomizing gas 13 Flow rate adjustment valve 14 Intermediate tank 15 Atomizing material holding container 17 distributed network 21 Reaction chamber 22 Object to be processed 23 Support 28 Pressure regulator 29a, 29b Liquid mass flow controller
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平３−112894（ＪＰ，Ａ) 特開 平８−102442（ＪＰ，Ａ) 特開 平５−82489（ＪＰ，Ａ) 特開 平５−175134（ＪＰ，Ａ) 特開 平８−169708（ＪＰ，Ａ) 特開 平９−36108（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C23C 16/448 H01L 21/31 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-3-112894 (JP, A) JP-A-8-102442 (JP, A) JP-A-5-82489 (JP, A) JP-A-5- 175134 (JP, A) JP 8-169708 (JP, A) JP 9-36108 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) C23C 16/448 H01L 21 / 31
Claims (12)
体に蒸着させる液体原料を霧化する霧化器と、この霧化
器に前記液体原料を供給する液体原料供給手段と、霧化
された前記液体原料を保持する霧化原料保持容器と、こ
の霧化原料保持容器に保持された霧化液体原料を前記反
応室に導入するためのキャリアガス供給手段とを設け、
前記液体原料供給手段は、前記液体原料を保持する液体
原料容器と、前記霧化器の液体原料流入部に下端が接続
された中間槽と、この中間槽の液面を前記液体原料の霧
化速度に応じた高さに保つ流量調整弁とを有し、この流
量調整弁が、前記液体原料容器から前記中間槽へ滴下さ
せる量もしくは前記中間槽から前記霧化器への流量を調
節することを特徴とする液体原料の蒸着装置。1. A reaction chamber for holding an object to be processed, an atomizer for atomizing a liquid material to be vapor-deposited on the object, and a liquid material supply means for supplying the liquid material to the atomizer. An atomization raw material holding container for holding the atomized liquid raw material, and a carrier gas supply means for introducing the atomized liquid raw material held in the atomization raw material holding container into the reaction chamber are provided.
The liquid raw material supply means includes a liquid raw material container holding the liquid raw material, an intermediate tank having a lower end connected to a liquid raw material inflow portion of the atomizer, and a liquid surface of the intermediate tank for atomizing the liquid raw material. A flow rate adjusting valve for maintaining a height according to the speed, and the flow rate adjusting valve adjusts the amount of the liquid raw material container dropped into the intermediate tank or the flow rate from the intermediate tank to the atomizer. An apparatus for depositing a liquid raw material characterized by:
る導入口と排気口とを有する反応室と、この反応室に取
り付けられ、前記被処理体に蒸着させる液体原料を霧化
する霧化器と、この霧化器に前記液体原料を供給する液
体原料供給手段とを設け、前記液体原料供給手段は、前
記液体原料を保持する液体原料容器と、前記霧化器の液
体原料流入部に下端が接続された中間槽と、この中間槽
の液面を前記液体原料の霧化速度に応じた高さに保つ流
量調整弁とを有し、この流量調整弁が、前記液体原料容
器から前記中間槽へ滴下させる量もしくは前記中間槽か
ら前記霧化器への流量を調節し、霧化された前記液体原
料を前記反応室の内部でキャリアガスと混合させること
を特徴とする液体原料の蒸着装置。2. A reaction chamber holding an object to be processed and having an inlet for introducing a carrier gas and an exhaust port, and a mist attached to the reaction chamber for atomizing a liquid raw material to be vapor-deposited on the object to be processed. A vaporizer and a liquid raw material supply means for supplying the liquid raw material to the atomizer are provided, and the liquid raw material supply means includes a liquid raw material container for holding the liquid raw material, and a liquid raw material inflow portion of the atomizer. Has an intermediate tank whose lower end is connected to, and a flow rate adjusting valve for maintaining the liquid level of the intermediate tank at a height corresponding to the atomization speed of the liquid raw material, and the flow rate adjusting valve is provided from the liquid raw material container. The amount of liquid to be dropped into the intermediate tank or the flow rate from the intermediate tank to the atomizer is adjusted, and the atomized liquid raw material is mixed with a carrier gas inside the reaction chamber. Vapor deposition equipment.
体に蒸着させる液体原料と霧化用気体を受け入れてこの
液体原料を霧化させる噴霧ノズルと、この噴霧ノズルに
前記液体原料を供給する液体原料供給手段と、霧化され
た前記液体原料を保持する霧化原料保持容器と、この霧
化原料保持容器に保持された霧化液体原料を前記反応室
に導入するためのキャリアガス供給手段とを設け、前記
液体原料供給手段は、前記液体原料を保持する液体原料
容器と、前記噴霧ノズルの液体原料流入部に下端が接続
された中間槽と、この中間槽の液面を前記液体原料の霧
化速度に応じた高さに保つ流量調整弁とを有し、この流
量調整弁が、前記液体原料容器から前記中間槽へ滴下さ
せる量もしくは前記中間槽から前記噴霧ノズルへの流量
を調節することを特徴とする液体原料の蒸着装置。3. A reaction chamber for holding an object to be processed, a liquid raw material to be vapor-deposited on the object to be treated, a spray nozzle for atomizing the liquid raw material by receiving an atomizing gas, and the liquid raw material at the spray nozzle. A liquid raw material supply means for supplying the atomized raw material, an atomized raw material holding container for holding the atomized liquid raw material, and a carrier for introducing the atomized liquid raw material held in the atomized raw material holding container into the reaction chamber. The liquid raw material supply means is provided with a liquid raw material container for holding the liquid raw material, an intermediate tank whose lower end is connected to a liquid raw material inflow portion of the spray nozzle, and a liquid surface of the intermediate tank. The liquid raw material has a flow rate adjusting valve which is maintained at a height corresponding to the atomization speed, and the flow rate adjusting valve is an amount dropped from the liquid raw material container to the intermediate tank or the intermediate tank to the spray nozzle. To regulate the flow rate Deposition apparatus of the liquid material to symptoms.
る導入口と排気口とを有する反応室と、この反応室に取
り付けられ、前記被処理体に蒸着させる液体原料と霧化
用気体を受け入れてこの液体原料を霧化させる噴霧ノズ
ルと、この噴霧ノズルに前記液体原料を供給する液体原
料供給手段とを設け、前記液体原料供給手段は、前記液
体原料を保持する液体原料容器と、前記噴霧ノズルの液
体原料流入部に下端が接続された中間槽と、この中間槽
の液面を前記液体原料の霧化速度に応じた高さに保つ流
量調整弁とを有し、この流量調整弁が、前記液体原料容
器から前記中間槽へ滴下させる量もしくは前記中間槽か
ら前記噴霧ノズルへの流量を調節し、霧化された前記液
体原料を前記反応室の内部でキャリアガスと混合させる
ことを特徴とする液体原料の蒸着装置。4. A reaction chamber holding an object to be processed and having an inlet and an outlet for introducing a carrier gas, a liquid raw material attached to the reaction chamber, and a vaporizing gas for vapor deposition on the object to be processed. A spray nozzle for receiving and atomizing the liquid raw material, and a liquid raw material supply means for supplying the liquid raw material to the spray nozzle are provided, and the liquid raw material supply means is a liquid raw material container for holding the liquid raw material, An intermediate tank having a lower end connected to the liquid raw material inflow portion of the spray nozzle, and a flow rate adjusting valve for keeping the liquid level of the intermediate tank at a height according to the atomization speed of the liquid raw material A valve adjusts the amount of liquid to be dropped from the liquid raw material container to the intermediate tank or the flow rate from the intermediate tank to the spray nozzle, and mixes the atomized liquid raw material with a carrier gas inside the reaction chamber. Characterized by Vapor deposition apparatus of the body raw materials.
体に蒸着させる液体原料を霧化する霧化器と、この霧化
器に前記液体原料を供給する液体原料供給手段と、霧化
された前記液体原料を保持する霧化原料保持容器と、こ
の霧化原料保持容器に保持された霧化液体原料を一定流
量前記反応室に導入するためのキャリアガス供給手段
と、 前記霧化原料保持容器のキャリアガス導入部に分散網と
を設けたことを特徴とする液体原料の蒸着装置。5. A reaction chamber for holding an object to be processed, an atomizer for atomizing a liquid material to be vapor-deposited on the object, and a liquid material supply means for supplying the liquid material to the atomizer. An atomization raw material holding container for holding the atomized liquid raw material, carrier gas supply means for introducing the atomized liquid raw material held in the atomization raw material holding container into the reaction chamber at a constant flow rate, and the fog A vapor deposition apparatus for a liquid raw material, characterized in that a dispersion net is provided in a carrier gas introduction part of a chemical raw material holding container.
体に蒸着させる液体原料と霧化用気体を受け入れてこの
液体原料を霧化させる噴霧ノズルと、この噴霧ノズルに
前記液体原料を供給する液体原料供給手段と、霧化され
た前記液体原料を保持する霧化原料保持容器と、この霧
化原料保持容器に保持された霧化液体原料を一定流量前
記反応室に導入するためのキャリアガス供給手段と、前
記霧化原料保持容器のキャリアガス導入部に分散網とを
設けたことを特徴とする液体原料の蒸着装置。6. A reaction chamber for holding an object to be treated, a liquid raw material to be vapor-deposited on the object to be treated, a spray nozzle for atomizing the liquid raw material by receiving atomizing gas, and the liquid raw material at the spray nozzle. For introducing a liquid raw material supply means, an atomized raw material holding container for holding the atomized liquid raw material, and a constant flow rate of the atomized liquid raw material held in the atomized raw material holding container into the reaction chamber 2. A vapor deposition apparatus for a liquid raw material, comprising: a carrier gas supply means of 1 .; and a dispersion network in a carrier gas introduction portion of the atomized raw material holding container.
分散網を設けたことを特徴とする請求項１または請求項
３のいずれかに記載の液体原料の蒸着装置。7. The vapor deposition apparatus for a liquid raw material according to claim 1, wherein the carrier gas introducing portion of the atomized raw material holding container is provided with a dispersion network.
体に蒸着させる液体原料と霧化用気体を受け入れてこの
液体原料を霧化させる噴霧ノズルと、この噴霧ノズルに
前記液体原料を供給する液体原料供給手段と、霧化され
た前記液体原料を保持する霧化原料保持容器と、この霧
化原料保持容器に保持された霧化液体原料を前記反応室
に導入するためのキャリアガス供給手段と、前記霧化原
料保持容器のキャリアガス導入部に分散網とを設け、前
記液体原料供給手段が、液体原料を圧送可能なポンプも
しくは液体マスフローコントローラであることを特徴と
する液体原料の蒸着装置。8. A reaction chamber for holding an object to be treated, a liquid raw material to be vapor-deposited on the object to be treated, a spray nozzle for atomizing the liquid raw material by receiving an atomizing gas, and the liquid raw material at the spray nozzle. A liquid raw material supply means for supplying the atomized raw material, an atomized raw material holding container for holding the atomized liquid raw material, and a carrier for introducing the atomized liquid raw material held in the atomized raw material holding container into the reaction chamber. A liquid raw material characterized in that a gas supply means and a dispersion network are provided in a carrier gas introduction part of the atomized raw material holding container, and the liquid raw material supply means is a pump or a liquid mass flow controller capable of pumping the liquid raw material. Vapor deposition equipment.
体に蒸着させる液体原料を霧化する霧化器と、この霧化
器に前記液体原料を供給する液体原料供給手段と、霧化
された前記液体原料を保持する霧化原料保持容器と、こ
の霧化原料保持容器に保持された霧化液体原料を一定流
量前記反応室に導入するためのキャリアガス供給手段
と、前記霧化原料保持容器のキャリアガス導入部に分散
網とを設け、前記液体原料供給手段が、液体原料を圧送
可能なポンプもしくは液体マスフローコントローラであ
ることを特徴とする液体原料の蒸着装置。9. A reaction chamber for holding an object to be processed, an atomizer for atomizing a liquid material to be vapor-deposited on the object, and a liquid material supply means for supplying the liquid material to the atomizer. Atomization raw material holding container for holding the atomized liquid raw material, carrier gas supply means for introducing a constant flow rate of the atomized liquid raw material held in the atomization raw material holding container, and the fog A vapor deposition apparatus for a liquid raw material, wherein a dispersion net is provided in a carrier gas introduction part of a chemical raw material holding container, and the liquid raw material supply means is a pump or a liquid mass flow controller capable of pumping the liquid raw material.
導入する工程と、この中間槽に導入された前記液体原料
を供給する工程と、供給されたこの液体原料を霧化する
工程と、霧化されたこの液体原料を保持する工程と、前
記保持された霧化液体原料をキャリアガスと混合する工
程と、前記混合された霧化液体原料とキャリアガスを反
応室に導入する工程と、前記被処理体に膜を蒸着させる
工程とを有し、前記中間槽の液面を前記液体原料の霧化
速度に応じた高さに保つことを特徴とする液体原料の蒸
着方法。10. A step of introducing a liquid raw material to be vapor-deposited on an object to be processed into an intermediate tank, a step of supplying the liquid raw material introduced into the intermediate tank, and a step of atomizing the supplied liquid raw material. A step of holding the atomized liquid raw material, a step of mixing the held atomized liquid raw material with a carrier gas, and a step of introducing the mixed atomized liquid raw material and carrier gas into a reaction chamber, And a step of depositing a film on the object to be processed, wherein the liquid surface of the intermediate tank is maintained at a height according to the atomization rate of the liquid material .
導入する工程と、この中間槽に導入された前記液体原料
を供給する工程と、供給されたこの液体原料を霧化する
工程と、霧化されたこの液体原料を保持する工程と、前
記保持された霧化液体原料を反応室に導入する工程と、
キャリアガスを前記反応室に導入する工程と、前記被処
理体に膜を蒸着させる工程とを有し、前記中間槽の液面
を前記液体原料の霧化速度に応じた高さに保つことを特
徴とする液体原料の蒸着方法。11. A step of introducing a liquid raw material to be vapor-deposited on an object to be processed into an intermediate tank, a step of supplying the liquid raw material introduced into the intermediate tank, and a step of atomizing the supplied liquid raw material. Holding the atomized liquid raw material, and introducing the held atomized liquid raw material into the reaction chamber,
A step of introducing a carrier gas into the reaction chamber, and a step of depositing a film on the object to be treated, and maintaining the liquid level of the intermediate tank at a height according to the atomization rate of the liquid raw material. A characteristic method of vapor deposition of a liquid raw material.
じた高さに保つ方法が、液体原料を中間槽に導入する流
量もしくはこの中間槽から供給する流量を調整すること
を特徴とする請求項１０または請求項１１のいずれかに
記載の液体原料の蒸着方法。12. A method of maintaining the liquid level of an intermediate tank at a height according to the atomization speed of a liquid raw material is characterized by adjusting the flow rate of introducing the liquid raw material into the intermediate tank or the flow rate supplied from this intermediate tank. The method for depositing a liquid raw material according to claim 10 or 11, wherein:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11326397A JP3532066B2 (en) | 1997-05-01 | 1997-05-01 | Liquid source vapor deposition method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11326397A JP3532066B2 (en) | 1997-05-01 | 1997-05-01 | Liquid source vapor deposition method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10308388A JPH10308388A (en) | 1998-11-17 |
| JP3532066B2 true JP3532066B2 (en) | 2004-05-31 |
Family
ID=14607738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11326397A Expired - Fee Related JP3532066B2 (en) | 1997-05-01 | 1997-05-01 | Liquid source vapor deposition method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3532066B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4299286B2 (en) | 2005-10-06 | 2009-07-22 | 東京エレクトロン株式会社 | Vaporization apparatus, film forming apparatus, and vaporization method |
| JP5529340B2 (en) * | 2011-03-15 | 2014-06-25 | 東芝三菱電機産業システム株式会社 | Deposition equipment |
| US20200206758A1 (en) * | 2018-12-14 | 2020-07-02 | Xia Tai Xin Semiconductor (Qing Dao) Ltd. | Assembly, system and method for supplying liquid |
-
1997
- 1997-05-01 JP JP11326397A patent/JP3532066B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10308388A (en) | 1998-11-17 |
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