JPH0442924A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH0442924A JPH0442924A JP14806490A JP14806490A JPH0442924A JP H0442924 A JPH0442924 A JP H0442924A JP 14806490 A JP14806490 A JP 14806490A JP 14806490 A JP14806490 A JP 14806490A JP H0442924 A JPH0442924 A JP H0442924A
- Authority
- JP
- Japan
- Prior art keywords
- alloy film
- wiring
- chlorine
- film
- dry etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 22
- 239000000460 chlorine Substances 0.000 claims abstract description 22
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 10
- 238000001312 dry etching Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 13
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 15
- 239000011521 glass Substances 0.000 abstract description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 5
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 abstract description 3
- 229910018594 Si-Cu Inorganic materials 0.000 abstract description 3
- 229910008465 Si—Cu Inorganic materials 0.000 abstract description 3
- 239000011574 phosphorus Substances 0.000 abstract description 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 3
- 238000004140 cleaning Methods 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 229910015844 BCl3 Inorganic materials 0.000 abstract 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 description 23
- 239000000956 alloy Substances 0.000 description 23
- 239000010410 layer Substances 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 8
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 150000001804 chlorine Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- -1 BCff3 +C22 Chemical compound 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は半導体装置の製造方法に関して、／１合金膜の
ドライエツチングまたは下地にへβ合金膜を有する絶縁
膜のドライエツチングの後処理方法に利用して特に有効
な技術である。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing a semiconductor device, and relates to a post-treatment method for dry etching of a /1 alloy film or a dry etching of an insulating film having a β alloy film as an underlying layer. This is a particularly effective technique to use.
［従来の技術］
集積回路の高密度化に伴う微細加工技術に伴って、配線
パターンや多層配線間のピアホールパターンのエツチン
グ加工は、湿式の化半エツチングから、プラズマを利用
したドライエツチングに移行されつつある。[Conventional technology] With the microfabrication technology accompanying the increase in the density of integrated circuits, the etching process of wiring patterns and peer hole patterns between multilayer wiring has shifted from wet semi-etching to dry etching using plasma. It is being done.
（１）たとえは、配線材料にＡｊ２合金膜を用いる場合
、該ドライエランチングにはＣｌ２２．ＢＣｐｓ 、Ｃ
Ｃ（２４，Ｓ Ｉ ＣＰ４などの塩素系ガスが用いられ
ている。(1) For example, when an Aj2 alloy film is used as the wiring material, Cl22. BCps,C
A chlorine-based gas such as C(24, S I CP4) is used.
該ドライエツチング後のフォ１−レジス１−表面やエツ
チングされた／１合金膜側面には、塩素成分が吸着して
いる。この塩素成分を放置すると、大気中の水分と反応
し塩酸が生成され、Ａε配線を腐食する。Chlorine components are adsorbed on the photoresist 1 surface after dry etching and on the etched side surface of the /1 alloy film. If this chlorine component is left unattended, it reacts with moisture in the atmosphere to generate hydrochloric acid, which corrodes the Aε wiring.
したがって、塩素成分をすみやかに除去しなければなら
ないが、その手段として従来は水洗を用いていた。Therefore, it is necessary to promptly remove the chlorine component, and conventionally, washing with water has been used as a means for removing the chlorine component.
（２）また、シリコン酸化膜やシリコン窒化膜のドライ
エツチングには、ＣＦ、、ＣＨＦ、、ＳＦ、、ＮＦ、な
どのフッ素系ガスが用いられている。該シリコン酸化膜
やシリコン窒化膜の下地がＡ１２合金膜である場合、オ
ーバーエツチングによりＡ１２合金膜の表面がフッ化さ
れ、フッ化アルミニウム層が形成される。フッ化アルミ
ニウムは絶縁物であるので、この上に配線をする場合に
導通不良になることがある。(2) Fluorine gases such as CF, CHF, SF, and NF are used for dry etching of silicon oxide films and silicon nitride films. When the base of the silicon oxide film or silicon nitride film is an A12 alloy film, the surface of the A12 alloy film is fluorinated by overetching to form an aluminum fluoride layer. Aluminum fluoride is an insulator, so when wiring is placed on top of it, poor conductivity may occur.
（３）さらに、Ａｌ合金膜は半導体装置の配線材料と一
般的に使われているが、半導体装置内部および外部から
、水分と塩素成分が侵入し、Ａ１２合金膜配線を腐食す
ることがある。(3) Furthermore, although Al alloy film is generally used as a wiring material for semiconductor devices, moisture and chlorine components may enter from inside and outside the semiconductor device and corrode the A12 alloy film wiring.
［発明が解決しようとする課題］
前述したように従来技術では、Ａｊ２合金膜の腐食防止
やＡβ合金膜表面のフッ化層を除去する有効な技術が無
かった。[Problems to be Solved by the Invention] As described above, in the prior art, there was no effective technique for preventing corrosion of the Aj2 alloy film or removing the fluoride layer on the surface of the Aβ alloy film.
そこで本発明はこのような問題点を解決するもので、そ
の目的とするところはＡ１２合金膜のドライエツチング
後に吸着塩素成分を効果的に除去し、またはＡＩ２合金
膜表面を不動体化させることによってＡｌ合金膜の腐食
を防止することおよびＡＩ２合金膜表面のフッ化アルミ
ニウム層を除去し、電気的導通がとれるようにする技術
を提供するところにある。The present invention is intended to solve these problems, and its purpose is to effectively remove the adsorbed chlorine component after dry etching the A12 alloy film, or to make the surface of the AI2 alloy film passivated. The object of the present invention is to provide a technique for preventing corrosion of an Al alloy film and removing an aluminum fluoride layer on the surface of an AI2 alloy film to enable electrical continuity.
［課題を解決するための手段］
本発明の半導体装置の製造方法は、半導体基板上のＡｌ
合金膜を、塩素系ガスを用いたドライエツチング法でパ
ターニングした後に、該半導体基板を温水で洗浄するこ
とによって、吸着している塩素成分を効果的に除去し、
かつＡＩ２合金膜表面に酸化アルミニウム層を形成して
不動体化し、腐食を防止する技術を提供することにある
。[Means for Solving the Problems] The method for manufacturing a semiconductor device of the present invention provides an Al
After patterning the alloy film by a dry etching method using chlorine-based gas, the semiconductor substrate is washed with hot water to effectively remove the adsorbed chlorine component,
Another object of the present invention is to provide a technique for forming an aluminum oxide layer on the surface of an AI2 alloy film to make it passivative and prevent corrosion.
さらに本発明は、半導体基板上のＡ！合金膜上の絶縁膜
をフッ素系ガスを用いてドライエツチング工程において
、Ａ１２合金膜のドライエツチング後またはフォトレジ
スト除去後に、該半導体基板を摂氏温度３０度から１０
０度の純水で洗浄することにより、塩素系ガスによって
半導体表面に付着している塩素成分を除去し、Ａｌ合金
膜配線の腐食を防止する。Furthermore, the present invention provides A! In the dry etching process of the insulating film on the alloy film using fluorine-based gas, the semiconductor substrate is heated from 30 degrees Celsius to 10 degrees Celsius after dry etching the A12 alloy film or removing the photoresist.
By cleaning with 0 degree pure water, chlorine components adhering to the semiconductor surface are removed by chlorine-based gas, and corrosion of the Al alloy film wiring is prevented.
（２）半導体基板上にＡ１２合金膜による配線パターン
を形成し、前記ＡＩ２配線上にシリコン酸化膜やシリコ
ン窒化膜を形成後に、前記ＡＩ２配線上の前記絶縁膜に
ドライエツチング法により穴パターンを形成する工程に
おいて、シリコン酸化膜やシリコン窒化膜のドライエツ
チング後またはフォトレジスト除去後に、該半導体基板
を摂氏温度３０度から１００度の純水で洗浄することに
より、フッ化したＡＩ２合金膜表面層を除去し、電気的
導通不良を防止する。(2) After forming a wiring pattern using an A12 alloy film on a semiconductor substrate and forming a silicon oxide film or a silicon nitride film on the AI2 wiring, a hole pattern is formed in the insulating film on the AI2 wiring by a dry etching method. In the process, after dry etching the silicon oxide film or silicon nitride film or removing the photoresist, the semiconductor substrate is washed with pure water at a temperature of 30 to 100 degrees Celsius to remove the fluorinated AI2 alloy film surface layer. to prevent electrical continuity failure.
［実 施 例］
以下実施例に基づいて本発明の詳細な説明する。第１図
はＭ○Ｓ構造におけるＮチャンネル部を例とした半導体
基板の断面図である。第１図のｌはＰ−Ｓｉ基板領域、
２はＮ０拡散領域、３はＬＯＧＯ５によるシリコン酸化
膜、４はゲートおよび配線用ポリシリコン、５は酸化膜
、６はコンタクト部を形成したリンガラス、７はＡｌ２
−５ｉ−Ｃｕ配線、８はフォトレジストパターンを示す
、リンガラス６にコンタクト部を形成後に、スパッタリ
ングなどの方法により表面全体にＡｌ２−５１−Ｃｕ層
を形成し、その上にフォトレジストパターンを形成後に
、ＢＣｆｆ３ ＋Ｃ２２などの塩素系ガスを用いてＡｌ
２−５ｉ−Ｃｕのドライエツチングをしたものが、第１
図である。この後に摂氏温度３０度から１００度の純水
で洗浄し、フォトレジスト８の表面、エツチングされた
Ａｌ２−５ｉ’−Ｃｕ配線７の側面およびリンガラス６
の表面に付着している塩素成分を除去する。[Examples] The present invention will be described in detail below based on Examples. FIG. 1 is a cross-sectional view of a semiconductor substrate exemplifying an N channel portion in an M○S structure. l in Fig. 1 is the P-Si substrate region;
2 is an N0 diffusion region, 3 is a silicon oxide film by LOGO5, 4 is polysilicon for gates and wiring, 5 is an oxide film, 6 is a phosphorus glass with which a contact part is formed, 7 is an Al2
-5i-Cu wiring, 8 shows a photoresist pattern. After forming a contact part on the phosphor glass 6, an Al2-51-Cu layer is formed on the entire surface by a method such as sputtering, and a photoresist pattern is formed on it. Later, using chlorine gas such as BCff3 +C22, Al
2-5i-Cu dry etched is the first
It is a diagram. After that, the surface of the photoresist 8, the side surface of the etched Al2-5i'-Cu wiring 7, and the phosphor glass 6 are washed with pure water at a temperature of 30 to 100 degrees Celsius.
Removes chlorine components adhering to the surface.
第２図の９はピアホール部を形成したシリコン酸化膜、
１０はフォトレジストパターンである。9 in Figure 2 is a silicon oxide film with a peer hole formed;
10 is a photoresist pattern.
第１図のフォトレジスト８を除去後、プラズマＣＶＤな
どの方法により表面全体にシリコン酸化膜を形成し、そ
の上にフォトレジストパターンを形成後に、ＣＨＦ５
＋Ｏａなどのフッ素系ガスを用いてシリコン酸化膜をド
ライエツチンしたものが第２図である。この後に摂氏温
度３０度から１００度の純水で洗浄し、オーバーエツチ
ングによりピアホール部のＡｌ２−５ｉ−Ｃｕ表面に形
成されているフッ化アルミニウム層を除去する。After removing the photoresist 8 in FIG. 1, a silicon oxide film is formed on the entire surface by a method such as plasma CVD, and after forming a photoresist pattern on it, a CHF5
FIG. 2 shows a silicon oxide film dry-etched using a fluorine-based gas such as +Oa. Thereafter, the aluminum fluoride layer formed on the Al2-5i-Cu surface in the pier hole portion is removed by washing with pure water at a temperature of 30 to 100 degrees Celsius and overetching.
第３図の１１は第２ＮのＡｆ２−５ｉ−Ｃｕ配線、Ｊ２
はシリコン窒化膜、１３はフォトレジストパターンであ
る７第２図のフォトレジスト１０を除去後に、プラズマ
ＣＶＤなどの方法により表面全体１こシリコン窒化膜を
形成し、その上にフォ１−レジス１−パターンを形成後
、ＣＦ４ ＋Ｏ□なとのフッ素系ガスを用いてシリコン
窒化膜をドライエツチングしたものが第３図である。こ
の後に摂氏温度３０度から１００度の純水で洗浄し、オ
ーバーエツチングによりポンディングパッド用開口部の
Ａｆｆ−５ｉ−Ｃｕ表面に形成されているフッ化アルミ
ニウム層を除去する。11 in Fig. 3 is the 2N Af2-5i-Cu wiring, J2
7 is a silicon nitride film, and 13 is a photoresist pattern.7 After removing the photoresist 10 shown in FIG. After forming the pattern, the silicon nitride film was dry etched using a fluorine gas such as CF4+O□, as shown in FIG. Thereafter, the aluminum fluoride layer formed on the Aff-5i-Cu surface of the opening for the bonding pad is removed by washing with pure water at a temperature of 30 to 100 degrees Celsius and overetching.
〔発明の効果１
（１）Ａｌ合金膜のドライエツチングには塩素系ガスは
必須であり、ドライエツチング後の半導体基板表面には
塩素成分が付着している。この塩素成分を放置しておく
と、Ａ１２合金膜の配線は塩素成分と反応し塩化アルミ
ニウムになり腐食が起こる。このＡ１２合金膜の腐食反
応には進行性があり、最終的に配線は断線し、半導体製
雪は不良になる。したがって、ドライエツチング後にす
みやかに塩素成分を除去しなければならない。塩素成分
の除去には、常温の純水よりも温水の方が除去能力が高
い７洗浄徒の純水には塩素成分が溶解しているため、洗
浄は流水状態で常に新しい純水を使い捨てで用いる。ま
た、フォトレジストに温水洗浄を用いれば、Ａ４２合金
膜表面に酸化アルミニウム層が形成され、配線表面が不
働態化するので新たな腐食にも強くなる。[Effect of the invention 1 (1) Chlorine-based gas is essential for dry etching of an Al alloy film, and chlorine components adhere to the surface of the semiconductor substrate after dry etching. If this chlorine component is left as it is, the wiring of the A12 alloy film will react with the chlorine component and become aluminum chloride, causing corrosion. This corrosion reaction of the A12 alloy film is progressive, and eventually the wiring is broken and the semiconductor snowmaking becomes defective. Therefore, the chlorine component must be removed immediately after dry etching. Warm water has a higher removal ability than pure water at room temperature for removing chlorine components.7 Because chlorine components are dissolved in the pure water of the cleaner, always wash under running water and use new purified water as a disposable. use Furthermore, if the photoresist is washed with hot water, an aluminum oxide layer is formed on the surface of the A42 alloy film, and the wiring surface becomes passivated, making it resistant to new corrosion.
（２）シリコン酸化膜やシリコン窒化膜のドライエツチ
ングにはフッ素系ガスは必須であり、下地がへβ合金膜
の場合には、オーバーエツチングによって露出したＡ４
２合金膜表面にフッ化アルミニウム層が形成される．こ
のフッ化アルミニウム層は電気的に導通しないため、こ
の上に第２層のＡｌ合金膜配線またはワイヤーリードを
ボンディングする際に、導通不良が起こる．フッ化アル
ミニウムは水堰外の溶液には溶解ぜず、１ｇ温の純水よ
りも、温水の方が溶解度が高い。(2) Fluorine-based gas is essential for dry etching silicon oxide films and silicon nitride films, and when the underlying layer is a beta alloy film, the A4 exposed by overetching
An aluminum fluoride layer is formed on the surface of the 2-alloy film. Since this aluminum fluoride layer is not electrically conductive, poor conductivity occurs when a second layer of Al alloy film wiring or wire leads is bonded thereon. Aluminum fluoride does not dissolve in the solution outside the water weir, and its solubility is higher in warm water than in pure water at 1 g temperature.
第１図、第２図乃び第３区はＭ○Ｓ構造におけるＮチャ
ンネル部を例とした半導体基板の断面図である。
２ ・ ・
３ ・ ・
４ ・
５ ・ ・
６ ・ ・
７ ・ ・
１ １ ・
ｌ ２ ・ ・
８、 １
Ｐ−Ｓｉ基板
Ｎ゛拡敢領域
Ｌ○Ｃ○Ｓシリコン酸化膜
・ポリシリコン
・酸化膜
ノンガラス
・第１ＮＡｊ２−Ｓ ｉ−ＣｕｎｉＪｉ・プラズマシリ
コン酸化膜
・第２層ＡジーＳｉ−Ｃｕ配線
・プラズマシリコン窒化膜
０、１３
・フォトレジスト
笥 Ｌ 図
以
上
駕２図FIGS. 1, 2, and 3 are cross-sectional views of a semiconductor substrate, taking as an example an N channel portion in an M○S structure. 2 ・ ・ 3 ・ ・ 4 ・ 5 ・ 6 ・ 7 ・ 1 1 ・ l 2 ・ ・ 8, 1 P-Si substrate N゛expansion area L○C○S silicon oxide film, polysilicon, oxide film Non-glass / 1st NAj2-S i-CuniJi / Plasma silicon oxide film / 2nd layer AJ Si-Cu wiring / Plasma silicon nitride film 0, 13 / Photoresist cabinet
Claims (2)
たドライエッチング法でパターニングした後に、該半導
体基板を温水洗浄することを特徴とする半導体装置の製
造方法。(1) A method for manufacturing a semiconductor device, which comprises patterning an Al alloy film on a semiconductor substrate by a dry etching method using chlorine-based gas, and then washing the semiconductor substrate with hot water.
をフッ素系ガスを用いたドライエッチング法でパターニ
ングした後に、該半導体基板を温水洗浄することを特徴
とする半導体装置の製造方法。(2) A method for manufacturing a semiconductor device, which comprises patterning an insulating film on an Al alloy film formed on a semiconductor substrate by a dry etching method using a fluorine-based gas, and then washing the semiconductor substrate with hot water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14806490A JPH0442924A (en) | 1990-06-06 | 1990-06-06 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14806490A JPH0442924A (en) | 1990-06-06 | 1990-06-06 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0442924A true JPH0442924A (en) | 1992-02-13 |
Family
ID=15444390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14806490A Pending JPH0442924A (en) | 1990-06-06 | 1990-06-06 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0442924A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06258134A (en) * | 1993-07-16 | 1994-09-16 | France Bed Co Ltd | Method for selecting mattress |
| US5916026A (en) * | 1994-12-16 | 1999-06-29 | Nsk Ltd. | Elastic universal joint |
| JP2019191470A (en) * | 2018-04-27 | 2019-10-31 | 東京応化工業株式会社 | Method for treating substrate having metal pattern, and method for forming metal pattern |
-
1990
- 1990-06-06 JP JP14806490A patent/JPH0442924A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06258134A (en) * | 1993-07-16 | 1994-09-16 | France Bed Co Ltd | Method for selecting mattress |
| US5916026A (en) * | 1994-12-16 | 1999-06-29 | Nsk Ltd. | Elastic universal joint |
| JP2019191470A (en) * | 2018-04-27 | 2019-10-31 | 東京応化工業株式会社 | Method for treating substrate having metal pattern, and method for forming metal pattern |
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