JPH0441916B2 - - Google Patents

Info

Publication number
JPH0441916B2
JPH0441916B2 JP60298866A JP29886685A JPH0441916B2 JP H0441916 B2 JPH0441916 B2 JP H0441916B2 JP 60298866 A JP60298866 A JP 60298866A JP 29886685 A JP29886685 A JP 29886685A JP H0441916 B2 JPH0441916 B2 JP H0441916B2
Authority
JP
Japan
Prior art keywords
liquid crystal
polymer liquid
light
optical recording
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60298866A
Other languages
Japanese (ja)
Other versions
JPS62157341A (en
Inventor
Toshihiko Ueno
Toyoichi Nakamura
Kazutsuka Tani
Hiroshi Hoshino
Kunikyo Yoshio
Koichi Takada
Hideo Samura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Sanyo Chemical Industries Ltd
Original Assignee
Sanyo Chemical Industries Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Chemical Industries Ltd, Nippon Electric Co Ltd filed Critical Sanyo Chemical Industries Ltd
Priority to JP60298866A priority Critical patent/JPS62157341A/en
Publication of JPS62157341A publication Critical patent/JPS62157341A/en
Publication of JPH0441916B2 publication Critical patent/JPH0441916B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/132Thermal activation of liquid crystals exhibiting a thermo-optic effect

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は光記録媒体、特に消去可能な光記録媒
体に関するものである。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to optical recording media, particularly erasable optical recording media.

(従来の技術) レーザビームを集光レンズにより微小スポツト
に集光し、光記録媒体面に照射し前記媒体上に光
学的変化を生じせしめて情報を記録する光記録方
式は高密度の情報記録が可能な方式として注目さ
れている。前記光記録に用いる媒体としては極め
て多岐に渡るものが提案されている。本発明に係
わる特に消去可能な光記録媒体としてはフアラデ
ー効果、カー効果等の磁気光学的効果を示す磁気
光学材料を媒体とした所謂光磁気記録媒体と、カ
ルコゲナイド化合物の如き材料の相変化により、
光学特性の差異を生ずる所謂相変化媒体を用いた
光記録媒体が代表的なものとして知られている。
この他にも、種々の媒体が提案されており、本発
明と同様高分子液晶を用いた情報記録媒体も提案
されている。(特開昭59−10930、特開昭59−
35989)。
(Prior Art) The optical recording method, in which a laser beam is focused on a minute spot by a condensing lens and irradiated onto the surface of an optical recording medium to cause an optical change on the medium and record information, is a high-density information recording method. This method is attracting attention as a possible method. A wide variety of media have been proposed for use in the optical recording. Particularly erasable optical recording media according to the present invention include so-called magneto-optical recording media using magneto-optical materials exhibiting magneto-optical effects such as Faraday effect and Kerr effect, and magneto-optical recording media using phase change of materials such as chalcogenide compounds.
An optical recording medium using a so-called phase change medium that produces differences in optical properties is known as a typical example.
In addition to this, various other media have been proposed, and information recording media using polymeric liquid crystals as well as the present invention have also been proposed. (JP-A-59-10930, JP-A-59-
35989).

(発明が解決しようとする問題点) 光磁気記録媒体は現在最も有力な記録媒体であ
り、実用化に近いものであるが一般的にS/Nが
〜40dBと低いこと、媒体に印加する外部磁場の
応答速度が遅く、情報の記録単位である。ビツト
毎の部分消去ができないため1トラツク一括消去
しなければならない。このため、情報の書き換え
が複雑になる欠点を有する。又、相変化媒体とし
て現在検討されている媒体はTe系酸化物もしく
はTe系合金であるがこれらは材料の毒性の問題
があり、人体への悪影響が危惧される。又これら
の記録媒体は蒸着、スパツタ等の技術により薄膜
化されるが、材料、製造的にコストが高い欠点を
有する。簡便な製法でかつコスト的にも安い光記
録媒体が強く望まれる。以上のような欠点を解決
する一方法として高分子液晶を用いた記録媒体が
前述の如く提案されているが、かかる記録媒体に
おいては特にネマチツク性高分子液晶のランダム
配向状態を書き込みあるいは消去のいずれかの状
態として用いるため、入射光が散乱され検出機構
が制限されるためS/N比が必ずしも充分でない
欠点を有する。
(Problems to be solved by the invention) Magneto-optical recording media are currently the most powerful recording media and are close to being put into practical use, but their S/N is generally as low as ~40 dB, and the external voltage applied to the media is low. The response speed of the magnetic field is slow, and it is a unit of recording information. Since it is not possible to partially erase each bit, one track must be erased all at once. This has the disadvantage that rewriting information becomes complicated. Furthermore, the media currently being considered as phase change media are Te-based oxides or Te-based alloys, but these have the problem of material toxicity and are feared to have an adverse effect on the human body. Although these recording media can be made into thin films by techniques such as vapor deposition and sputtering, they have the drawback of high costs in terms of materials and manufacturing. There is a strong desire for an optical recording medium that is simple to manufacture and inexpensive. As mentioned above, a recording medium using a polymer liquid crystal has been proposed as a way to solve the above-mentioned drawbacks. Since it is used in this state, the incident light is scattered and the detection mechanism is limited, so it has the disadvantage that the S/N ratio is not necessarily sufficient.

(問題点を解決するための手段) 本発明の目的は上記した欠点を改善する、即ち
製造的にも簡便で低コストであり、かつ高いS/
N比を実現できる消去可能な記録媒体を提供する
事にある。本発明になる光記録媒体の構成は基板
上に光吸収層を設け、前記光吸収層上にラセンピ
ツチpと屈折率nが読み出し光源波長λに対して
ほぼλ=npであるコレステリツク性高分子液晶
を光記録層とした構成である。
(Means for Solving the Problems) The object of the present invention is to improve the above-mentioned drawbacks, that is, to provide a method that is simple and inexpensive to manufacture, and has a high S/S/
The purpose of the present invention is to provide an erasable recording medium that can achieve a high N ratio. The structure of the optical recording medium according to the present invention is that a light absorption layer is provided on a substrate, and a cholesteric polymer liquid crystal whose helical pitch p and refractive index n are approximately λ=np with respect to the reading light source wavelength λ is disposed on the light absorption layer. The structure is such that the optical recording layer is the optical recording layer.

(作用) 本発明の基本的動作原理を説明する。(effect) The basic operating principle of the present invention will be explained.

記録層にはコレステリツク性高分子液晶を用い
る。コレステリツク性高分子液晶は液晶基がラセ
ン配列している事が知られており、前記ラセン配
列をなすため、コレステリツク特有の光学特性を
示す。代表的光学特性として前記ラセン構造の周
期ピツチに対応した光の波長選択反射現象があ
る。これはコレステリツク高分子液晶のピツチを
P、屈折率をnとすると波長入=npでかつラセ
ンの回転方向と同方向に回転する円偏光のみ選択
的に反射される現象である。本発明はこの選択反
射現象に基づくものである。光選択反射波長は、
前記高分子液晶の屈折率ピツチを変える事により
変化させる事が可能である。従来、低分子系コレ
ステリツク液晶ではピツチ温度等により変化する
事が知られている。
A cholesteric polymer liquid crystal is used for the recording layer. It is known that liquid crystal groups in cholesteric polymer liquid crystals have a helical arrangement, and because of the helical arrangement, they exhibit optical properties unique to cholesteric. A typical optical property is a wavelength-selective reflection phenomenon of light corresponding to the periodic pitch of the helical structure. This is a phenomenon in which, when the pitch of the cholesteric polymer liquid crystal is P and the refractive index is n, only circularly polarized light whose wavelength input is np and rotates in the same direction as the rotation direction of the helix is selectively reflected. The present invention is based on this selective reflection phenomenon. The light selective reflection wavelength is
It can be changed by changing the refractive index pitch of the polymer liquid crystal. Conventionally, it has been known that low molecular weight cholesteric liquid crystals change depending on pitch temperature, etc.

本発明者が鋭意検討した結果、コレステリツク
相にあるコレステリツク高分子液晶にレーザビー
ム照射により急激に加熱すると、ラセンピツチ長
変化もしくはラセン軸の回転等の変化に対応する
と思われる光選択波長変化による色変化(透過率
変化)が生じ、かつレーザビーム照射の除去によ
り急激に冷却すると前記色変化状態が保存される
事が判明した。これは変化したピツチ状態が急冷
効果のためそのまま保存されたものと考られる。
一方、除冷した場合は前記色変化状態が消失し、
元の状態に戻ることが判明した。レーザビームの
照射エネルギーを更に大きくした場合は前記ピツ
チ長変化に対応する色変化とは異なり、ピツト形
成が生じ急冷により保存され、更に前記形成され
たピツトは再加熱除冷により消失し元の状態に戻
ることが確認された。
As a result of intensive studies by the present inventors, it has been found that when a cholesteric polymer liquid crystal in a cholesteric phase is rapidly heated by laser beam irradiation, a color change occurs due to a change in the light selection wavelength, which seems to correspond to a change in the helical pitch length or rotation of the helical axis. (Transmittance change) occurs, and it has been found that the color change state is preserved when rapidly cooled by removal of laser beam irradiation. This is thought to be because the changed pitch state was preserved as it was due to the rapid cooling effect.
On the other hand, when slowly cooling, the color change state disappears,
It turned out that it returned to its original state. When the irradiation energy of the laser beam is further increased, unlike the color change corresponding to the pitch length change, pits are formed and are preserved by rapid cooling, and furthermore, the formed pits disappear by reheating and slow cooling, returning to the original state. confirmed to return.

本発明を図を用いて更に詳細に説明する。 The present invention will be explained in more detail using figures.

第1図は本発明の光記録媒体の一実施例の模式
的断面図である。第1図において、プラスチツク
又はガラス基板1上に書き込み光ビームを効率的
に熱に変換する光吸収層2が形成されている。光
吸収層としては光ビームの波長域に大きな吸収を
有し、融点が比較的高く薄膜化できるものが望ま
しい。光吸収層は本発明においては必須である。
前記コレステリツク性高分子液晶の光学変化は熱
による変化であるが前記コレステリツク性高分子
液晶は可視域から近赤外域においてほとんど透明
であり、レーザビームを吸収し熱に変換する能力
は低い。従つて、高感度でしかも高速高S/Nを
実現するには上記吸収層をもつ必要がある。
FIG. 1 is a schematic cross-sectional view of an embodiment of the optical recording medium of the present invention. In FIG. 1, a light absorbing layer 2 is formed on a plastic or glass substrate 1 to efficiently convert the writing light beam into heat. The light absorption layer is preferably one that has large absorption in the wavelength range of the light beam, has a relatively high melting point, and can be made into a thin film. A light absorption layer is essential in the present invention.
The optical change of the cholesteric polymer liquid crystal is due to heat, but the cholesteric polymer liquid crystal is almost transparent in the visible to near infrared region and has a low ability to absorb laser beams and convert them into heat. Therefore, in order to achieve high sensitivity, high speed, and high S/N, it is necessary to have the above-mentioned absorption layer.

光ビームとして半導体レーザ(λ=0.78〜
0.83μm)を用いる時はバナジルフタロシアニン
等フタロシアニン化合物等を真空蒸着で形成した
ものが利用できる。更に可溶性バナジルフタルシ
アニンを適当な溶媒で塗布乾燥することで形成す
ることもできる。前記バナジルフタロシアニンの
他には、市販近赤外吸収剤とてIR−750、IRG−
002、IRG−003(日本化薬)NK−78、NK−123、
NK−125、NK−126、NK−2014、NK−2421、
NK−2772(日本感光色素研究所)、PA−1001、
1003、1005、1006(三井東圧化学)等が利用でき
る。前記光吸収層上にはコレステリツク性高分子
液晶薄膜3が形成されている。コレステリツク性
高分子液晶としては種々の物が利用できる。一例
を上げれば下記構造式〔1〕で表されるようなコ
レステロール誘導体とネマチツク性液晶分子を付
加したシロキサン系高分子液晶がある 前記コレステリツク液晶中には成膜性を向上させ
るため微量の可塑剤等添加物が含まれていてもよ
い。前記高分子液晶薄膜化は種々の方法により可
能である。前記高分子液晶を適当な溶媒に可溶化
し、スピンコート等により塗布する方法、グラビ
ア印刷で転写する方法、ドクターブレードで塗布
する方法等が採用でき、前記塗布膜を加熱乾燥す
ることで薄膜化できる。あるいは基板上で加熱加
圧下で形成することにより薄膜化することも可能
である。前記高分子液晶薄膜の膜厚は0.1μm〜数
十μmに調整される。前記高分子液晶膜薄膜厚上
には一般に保護層4が形成される。しかし、前記
保護膜4は本発明の必須要件ではなく、これがな
くてもよい。前記高分子液晶のラセン回転方向は
用いる光学活性物質により決まる。前記構成式
〔1〕で示されるようなコレステロール誘導体を
含む高分子液晶は左回り円偏光のλ=npで示さ
れる波長を中心に選択反射される。
Semiconductor laser (λ = 0.78 ~
0.83 μm), a phthalocyanine compound such as vanadyl phthalocyanine formed by vacuum evaporation can be used. Furthermore, it can also be formed by coating soluble vanadyl phthalcyanine with a suitable solvent and drying it. In addition to the vanadyl phthalocyanine, commercially available near-infrared absorbers include IR-750 and IRG-
002, IRG-003 (Nippon Kayaku) NK-78, NK-123,
NK-125, NK-126, NK-2014, NK-2421,
NK-2772 (Japan Photosensitive Dye Research Institute), PA-1001,
1003, 1005, 1006 (Mitsui Toatsu Chemical) etc. can be used. A cholesteric polymer liquid crystal thin film 3 is formed on the light absorption layer. Various types of cholesteric polymer liquid crystals can be used. One example is a siloxane polymer liquid crystal with added cholesterol derivatives and nematic liquid crystal molecules as shown in the following structural formula [1]. The cholesteric liquid crystal may contain a small amount of additives such as a plasticizer in order to improve film forming properties. The polymer liquid crystal film can be made into a thin film by various methods. The polymer liquid crystal can be solubilized in a suitable solvent and applied by spin coating, etc., transferred by gravure printing, applied with a doctor blade, etc., and the applied film can be made into a thin film by heating and drying. can. Alternatively, it is also possible to form a thin film by forming it on a substrate under heat and pressure. The thickness of the polymer liquid crystal thin film is adjusted to 0.1 μm to several tens of μm. A protective layer 4 is generally formed on the thin polymer liquid crystal film. However, the protective film 4 is not an essential requirement of the present invention, and may be omitted. The helical rotation direction of the polymer liquid crystal is determined by the optically active material used. The polymer liquid crystal containing a cholesterol derivative as shown in the above structural formula [1] is selectively reflected around the wavelength of left-handed circularly polarized light, λ=np.

従つて、前記ピツチを選択反射波長を可視域か
ら近赤外波長域に調整し、かつ前記コレステリツ
クと同方向に回転した円偏光を読み出し光に用い
た場合(第1図においては、読み出し光ビーム5
の偏光方向6は左回りを示してある。当然媒体が
右回りラセン構造をなす場合は、前記読み出し光
ビームの偏光方向は右回りを用いればよい。)、極
めて大きな光学変化を示し、高いS/Nを実現で
きる。即ち、あらかじめピツチpを読み出し光源
波長λに対してほぼλがほぼnpに等しくなるよ
うに調整しておけば、情報が書き込まれない領域
では極めて高い反射率を示し、一方ピツトを形成
するようなモードで情報を書き込んだ領域では急
激な反射率低下が生じ、結果的に高S/Nが実現
できる。一方、前記ピツチPをあらかじめ前記読
み出し光源の波長λに対して、λ≫≫npに調整
し、かつピツチ長が長くなるような光量領域で情
報を書き込めば、情報の非書込部は極めて低い反
射率、書込部は高反射率になり高S/Nが同様に
実現できる。
Therefore, when the selective reflection wavelength of the pitch is adjusted from the visible range to the near-infrared wavelength range, and circularly polarized light rotated in the same direction as the cholesteric light is used as the readout light (in Fig. 1, the readout light beam 5
The polarization direction 6 is shown counterclockwise. Of course, if the medium has a clockwise helical structure, the polarization direction of the readout light beam may be clockwise. ), it shows an extremely large optical change and can achieve a high S/N. That is, if the pitch p is adjusted in advance so that λ is approximately equal to np with respect to the reading light source wavelength λ, the area where no information is written will have an extremely high reflectance, while the area where a pit will be formed will have an extremely high reflectance. In the area where information is written in the mode, a rapid decrease in reflectance occurs, and as a result, a high S/N can be achieved. On the other hand, if the pitch P is adjusted in advance to λ≫≫np with respect to the wavelength λ of the reading light source, and information is written in a light amount region where the pitch length becomes long, the non-written portion of information is extremely low. The reflectance and writing portion have high reflectance, and high S/N can be achieved as well.

本発明は高分子液晶を記録層に用いており塗
布、印刷などの方法で簡単にかつ同時に大量形成
できる。また作製時間が蒸着に比べて1/20以下に
なり量産性に優れている。材料費もTe等無機材
料に比べて1/10以下と安く、低コストになる。
The present invention uses polymeric liquid crystal for the recording layer, and can be easily and simultaneously formed in large quantities by methods such as coating and printing. In addition, the production time is less than 1/20 that of vapor deposition, making it excellent for mass production. The material cost is less than 1/10 that of inorganic materials such as Te, resulting in low cost.

実施例 1 ガラス基板上にバナルジルフタロシニアンを真
空蒸着で形成し、その上に前記構造式〔1〕で示
される高分子液晶の薄膜をスピンコート等で形成
した。前記高分子液晶の選択反射中心波長はほぼ
830nmに調整した。光ビームは波長830nmのレ
ーザダイオードを用いた。8mw 80μsのパルス
光で書き込みを行ないピツトの形成を確認した。
前記媒体を1mwの左回り円偏光で再生したとこ
ろ、S/N=60dBの高S/Nで再生できた。前
記情報を書き込んだ媒体を70℃以上に加熱するこ
とで前記情報は完全に消去できた。なお、媒体の
劣化は認めらなかつた。
Example 1 Banardyl phthalocyanine was formed on a glass substrate by vacuum evaporation, and a thin film of polymeric liquid crystal represented by the structural formula [1] was formed thereon by spin coating or the like. The selective reflection center wavelength of the polymer liquid crystal is approximately
The wavelength was adjusted to 830nm. A laser diode with a wavelength of 830 nm was used as the light beam. Writing was performed using pulsed light of 8 mw and 80 μs, and the formation of pits was confirmed.
When the medium was reproduced with 1 mw of left-handed circularly polarized light, reproduction was possible with a high S/N of 60 dB. By heating the medium on which the information was written to 70°C or higher, the information could be completely erased. Note that no deterioration of the medium was observed.

実施例 2 高分子液晶の選択反射波長を550nmに調整し
た以外は実施例1と同じ構成の媒体に5mw
80μsのパルス光で書き込みを行ないピツチ長変化
に基づく変化を確認した。
Example 2 A 5 mW medium with the same configuration as Example 1 except that the selective reflection wavelength of the polymer liquid crystal was adjusted to 550 nm.
Writing was performed using pulsed light of 80 μs, and changes due to changes in pitch length were confirmed.

1mwの左回り円偏光で再生したところ、情報
記録部では顕著な反射率上昇があり、S/N〜
50dBの高S/Nで再生できた。なお、入射パワ
ー密度を25〜65m/cm2間で連続的に変化させたと
ころ、前記入射エネルギー密度に対応して反射率
の上昇が見られた。この事から、入射エネルギー
の多値的制御による多値記録の可能性も判明し
た。前記記録部は70℃以上の加熱により消去でき
た。
When reproducing with 1mW left-handed circularly polarized light, there was a noticeable increase in reflectance in the information recording section, and the S/N was ~
It was possible to play with a high S/N of 50dB. Incidentally, when the incident power density was continuously changed from 25 to 65 m/cm 2 , an increase in reflectance was observed corresponding to the incident energy density. This also revealed the possibility of multilevel recording through multilevel control of incident energy. The recorded portion could be erased by heating at 70° C. or higher.

(発明の効果) 前述の如く、本発明により製造的にも簡便でか
つ低コストであり、かつ60dBと高S/N比を実
現できる消去可能な記録媒体を提供することがで
きた。
(Effects of the Invention) As described above, the present invention makes it possible to provide an erasable recording medium that is easy to manufacture, low cost, and can achieve a high S/N ratio of 60 dB.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明になる記録媒体の模式的断面略
図である。 図において、1……支持基板、2……光吸収
層、3……高分子液晶、4……保護層、5……光
ビーム。
FIG. 1 is a schematic cross-sectional view of a recording medium according to the present invention. In the figure, 1...support substrate, 2...light absorption layer, 3...polymer liquid crystal, 4...protective layer, 5...light beam.

Claims (1)

【特許請求の範囲】[Claims] 1 光吸収層上にコレステリツク性高分子液晶か
ら成る光記録層を備えた積層構造を少なくとも有
しかつ前記コレステリツク性高分子液晶のラセン
ピツチpと屈折率nが読み出し光源波長λに対し
てほぼλ=npである事を特徴とする光記録媒体。
1. It has at least a laminated structure including an optical recording layer made of cholesteric polymer liquid crystal on a light absorption layer, and the helical pitch p and refractive index n of the cholesteric polymer liquid crystal are approximately λ = λ with respect to the reading light source wavelength λ. An optical recording medium characterized by being np.
JP60298866A 1985-12-27 1985-12-27 Optical recording medium Granted JPS62157341A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60298866A JPS62157341A (en) 1985-12-27 1985-12-27 Optical recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60298866A JPS62157341A (en) 1985-12-27 1985-12-27 Optical recording medium

Publications (2)

Publication Number Publication Date
JPS62157341A JPS62157341A (en) 1987-07-13
JPH0441916B2 true JPH0441916B2 (en) 1992-07-09

Family

ID=17865202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60298866A Granted JPS62157341A (en) 1985-12-27 1985-12-27 Optical recording medium

Country Status (1)

Country Link
JP (1) JPS62157341A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2696696B2 (en) * 1987-08-05 1998-01-14 キヤノン株式会社 Information recording medium
JP2696697B2 (en) * 1987-08-06 1998-01-14 キヤノン株式会社 Information recording medium
JPH02134614A (en) * 1988-11-15 1990-05-23 Ricoh Co Ltd Color image projector

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57177125A (en) * 1981-04-25 1982-10-30 Toshiba Corp Optical type recording and reproducing device using liquid crystal
JPS58142314A (en) * 1982-02-18 1983-08-24 Oki Electric Ind Co Ltd Optical recording medium
JPS5935989A (en) * 1982-08-24 1984-02-27 Konishiroku Photo Ind Co Ltd Information recording medium
JPS59104625A (en) * 1982-12-08 1984-06-16 Oki Electric Ind Co Ltd Optical recording medium
JPS60178092A (en) * 1984-02-27 1985-09-12 Tdk Corp Optical recording medium
JPS60179294A (en) * 1984-02-28 1985-09-13 Tdk Corp Optical recording medium
JPS60236132A (en) * 1984-05-10 1985-11-22 Toshiba Corp Optical recording and reproducing device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57177125A (en) * 1981-04-25 1982-10-30 Toshiba Corp Optical type recording and reproducing device using liquid crystal
JPS58142314A (en) * 1982-02-18 1983-08-24 Oki Electric Ind Co Ltd Optical recording medium
JPS5935989A (en) * 1982-08-24 1984-02-27 Konishiroku Photo Ind Co Ltd Information recording medium
JPS59104625A (en) * 1982-12-08 1984-06-16 Oki Electric Ind Co Ltd Optical recording medium
JPS60178092A (en) * 1984-02-27 1985-09-12 Tdk Corp Optical recording medium
JPS60179294A (en) * 1984-02-28 1985-09-13 Tdk Corp Optical recording medium
JPS60236132A (en) * 1984-05-10 1985-11-22 Toshiba Corp Optical recording and reproducing device

Also Published As

Publication number Publication date
JPS62157341A (en) 1987-07-13

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