JPH0437530B2 - - Google Patents
Info
- Publication number
- JPH0437530B2 JPH0437530B2 JP57099219A JP9921982A JPH0437530B2 JP H0437530 B2 JPH0437530 B2 JP H0437530B2 JP 57099219 A JP57099219 A JP 57099219A JP 9921982 A JP9921982 A JP 9921982A JP H0437530 B2 JPH0437530 B2 JP H0437530B2
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- chip
- density
- present
- field emission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000011229 interlayer Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 4
- 239000002585 base Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 230000002687 intercalation Effects 0.000 description 2
- 238000009830 intercalation Methods 0.000 description 2
- 229910014264 BrF Inorganic materials 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- -1 metal halide compound Chemical class 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
Landscapes
- Electron Sources, Ion Sources (AREA)
- Cold Cathode And The Manufacture (AREA)
Description
【発明の詳細な説明】
本発明はエネルギー分布の幅が小さく、電流密
度が大きく、かつ電流変動率が小さいことを必要
とする電界放射陰極に関し、特に、この種の陰極
におけるチツプ素材に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a field emission cathode that requires a narrow energy distribution width, a large current density, and a small current fluctuation rate, and particularly relates to a chip material for this type of cathode. be.
従来、電界放射陰極におけるチツプはタングス
テン*)およびその化合物（チタニウムを拡散させ
たタングステン）を材料としている。このような
陰極から得られる放射電子のエネルギー分布の幅
（半値幅）は約0.3eV以上の値を示し、他の材料
でも、ほぼ同程度の値となる。この値は理論値と
も一致し、通常の材料を使つたばあいの限界を与
える。そこで、この限界をいかに越えるかが当面
の課題となつている。 Conventionally, chips in field emission cathodes are made of tungsten *) and its compounds (tungsten with titanium diffused). The width (half width) of the energy distribution of emitted electrons obtained from such a cathode exhibits a value of approximately 0.3 eV or more, and other materials have approximately the same value. This value agrees with the theoretical value and provides the limit when using ordinary materials. Therefore, the current issue is how to overcome this limit.
＊） R.H.Good，Jr.and E.W.Mu¨ller，
Handbook Phy，3rd ed.，Vol 21 Springer
−Verlog（1956）
したがつて、本発明の目的は、電界放射陰極か
ら放射される電子のエネルギー分布の幅を従来の
値（0.3eV）より小さくし、かつ大きな電流密度
と小さな電流変動率をもつ電界放射陰極を提供す
ることにある。*) RHGood, Jr. and EW Mu¨ller,
Handbook Phy, 3rd ed., Vol 21 Springer
-Verlog (1956) Therefore, the purpose of the present invention is to make the width of the energy distribution of electrons emitted from a field emission cathode smaller than the conventional value (0.3 eV), and to achieve a large current density and a small current fluctuation rate. The object of the present invention is to provide a field emission cathode with
以下、本発明を図を用いて詳述する。 Hereinafter, the present invention will be explained in detail using figures.
はじめに本発明の原理について述べる。 First, the principle of the present invention will be described.
陰極材料の母材となる黒鉛化した炭素の陰極構
造はタングステン等の金属とは全く異なることが
知られている。第１図は金属の状態密度、すなわ
ち単位エネルギーあたりの電子数を示す。エネル
ギー分布は状態密度に電子の透過関数を乗じた形
で与えられ第２図に示す様になる。電子はフエル
ミ準位近傍のエネルギーを持つて放射されるが、
フエルミ準位近傍で状態密度の値は〜0.5個／原
子・eVである。一方、黒鉛化した炭素の状態密
度は第３図に示す形をもち、フエルミ準位近傍の
状態密度の値は〜0.005個／原子・eVと桁違いに
小さい。そこで黒鉛の層間に単体元素または化合
物が入り込む現象（インターカレーシヨン）を利
用して層間化合物を形成すると、フエルミ準位近
傍に層間物質の状態密度をつくり、かつその値は
0.1〜0.5個／原子・eVと金属と同程度の値をと
る。この様子を第４図に示す。フエルミ準位近傍
につくられた状態密度は層間に入れる物質によつ
て異なるが、この新しくできた状態密度がフエル
ミ準位近傍に来れば鋭いエネルギー分布（
0.3eV）を得ることが可能となる。 It is known that the cathode structure of graphitized carbon, which is the base material of the cathode material, is completely different from that of metals such as tungsten. Figure 1 shows the density of states of metals, that is, the number of electrons per unit energy. The energy distribution is given by multiplying the density of states by the electron transmission function, as shown in Figure 2. Electrons are emitted with energy near the Fermi level, but
The density of states near the Fermi level is ~0.5/atom/eV. On the other hand, the density of states of graphitized carbon has the form shown in Figure 3, and the value of the density of states near the Fermi level is ~0.005 atoms/eV, which is an order of magnitude smaller. Therefore, if an intercalation compound is formed by utilizing the phenomenon that an element or a compound enters between graphite layers (intercalation), a density of state of the interlayer material is created near the Fermi level, and its value is
It takes a value of 0.1 to 0.5 atoms/eV, which is similar to that of metals. This situation is shown in FIG. The density of states created near the Fermi level differs depending on the material inserted between the layers, but if this newly created density of states comes near the Fermi level, a sharp energy distribution (
0.3eV).
また、黒鉛化した炭素を陰極とするばあい、チ
ツプの曲率半径は金属チツプの1/7〜1/8となり、
強い電界が発生するので、本発明による陰極でも
同じ効果が期待される。本発明による陰極でのフ
エルミ準位近傍の状態密度は金属と同程度である
から、金属チツプより強い電界が印加できる点で
金属チツプより大きな電流密度を得ることが可能
となる。 In addition, when graphitized carbon is used as a cathode, the radius of curvature of the chip is 1/7 to 1/8 that of a metal chip,
The same effect is expected with the cathode according to the invention since a strong electric field is generated. Since the density of states in the vicinity of the Fermi level in the cathode according to the present invention is comparable to that of metal, it is possible to apply a stronger electric field than a metal chip, making it possible to obtain a larger current density than a metal chip.
次に、本発明による電界放射陰極の具体例につ
いて述べる。 Next, a specific example of the field emission cathode according to the present invention will be described.
第５図は本発明の一実施例を示したものであ
る。同図において、１は黒鉛化した炭素（ガラス
状炭素、炭素フアイバ、炭素ホイスカなど）のチ
ツプで、先端部分の曲率半径を1000〜2000Åとし
たものである。このチツプ１にはあらかじめアル
カリ金属（Ｋ，Cs，Na，Li，Rb）やアルカリ土
類金属（Ba，Ca，Sr）や希土類金属（Sm，Eu，
Yb）や遷移金属（Mo、Mn，Fe，Co，Ni，Cu，
Cr）などの単体元素か、ハロゲン（Ｆ，Cl，Br，
BrF3，IF5，ICl，IBr）、ハロゲン化金属の化合
物（AsF5，上記金属とハロゲンとの化合物）の
１つが層間物質として入れてある。２は黒鉛板
で、チツプ１を接合してある。３は電極で、２本
の電極がガラスベース４に固定されている。この
電極３は直流電源５に接続され、チツプ１を通電
加熱できる様になつている。チツプ１にアノード
板７を対置し、高圧直流電源６を接続する。この
ときチツプ１の先端から電子が電界放射され、ア
ノード板７に到達する。その一部をアノード板７
中央の小孔を通し、レンズ８で絞り、試料９の上
に収束させる。 FIG. 5 shows an embodiment of the present invention. In the figure, 1 is a tip of graphitized carbon (glassy carbon, carbon fiber, carbon whisker, etc.) with a radius of curvature of 1000 to 2000 Å at the tip. Chip 1 is pre-filled with alkali metals (K, Cs, Na, Li, Rb), alkaline earth metals (Ba, Ca, Sr), rare earth metals (Sm, Eu,
Yb) and transition metals (Mo, Mn, Fe, Co, Ni, Cu,
Single elements such as Cr) or halogens (F, Cl, Br,
BrF 3 , IF 5 , ICl, IBr), or a metal halide compound (AsF 5 , a compound of the above metals and halogen) is included as an interlayer material. 2 is a graphite plate to which chip 1 is bonded. Reference numeral 3 denotes electrodes, and two electrodes are fixed to the glass base 4. This electrode 3 is connected to a DC power source 5 so that the chip 1 can be heated by electricity. An anode plate 7 is placed opposite to the chip 1, and a high voltage DC power source 6 is connected. At this time, electrons are emitted from the tip of the chip 1 in an electric field and reach the anode plate 7. Part of it is anode plate 7
It passes through a small hole in the center, is apertured with a lens 8, and is focused onto a sample 9.
本発明によれば、電界放射陰極から放射される
電子のエネルギー分布の幅を0.3eVより小さくで
きる。また、陰極の電子放射部分の曲率半径が通
常陰極の1/7〜1/8となりうるので、いわゆる点電
子源（点光源）と見なすことができる。試料の表
面に電子線を収束するばあい、収束スポツトの径
は点光源のサイズとエネルギー分布の幅とが小さ
いほど小さくなり、本発明により収束スポツト径
を従来の陰極を用いたばあいに比較してさらに小
さくできる効果がある。 According to the present invention, the width of the energy distribution of electrons emitted from the field emission cathode can be made smaller than 0.3 eV. Furthermore, since the radius of curvature of the electron emitting portion of the cathode can be 1/7 to 1/8 of that of the normal cathode, it can be considered as a so-called point electron source (point light source). When converging an electron beam onto the surface of a sample, the diameter of the converging spot becomes smaller as the size of the point light source and the width of the energy distribution become smaller. According to the present invention, the diameter of the converging spot can be compared with that when using a conventional cathode. This has the effect of making it even smaller.
第１図〜第４図は本発明の原理を説明するため
の説明図、第５図は本発明による電界放射陰極の
基本構成図である。
１……チツプ、２……黒鉛フイラメント、３…
…電極、４……ガラスベース、５……直流電源、
６……高圧電源、７……アノード板、８……電子
レンズ、９……試料。
1 to 4 are explanatory diagrams for explaining the principle of the present invention, and FIG. 5 is a basic configuration diagram of a field emission cathode according to the present invention. 1...chip, 2...graphite filament, 3...
...Electrode, 4...Glass base, 5...DC power supply,
6... High voltage power supply, 7... Anode plate, 8... Electron lens, 9... Sample.
Claims (1)
素あるいは化合物からなる層間物質を挿入・配列
させて形成した層間化合物からなるチツプを備え
てなることを特徴とする電界放射陰極。1. A field emission cathode comprising a chip made of an interlayer compound formed by inserting and arranging an interlayer substance made of a single element or a compound between the layers of a base material made of graphitized carbon.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57099219A JPS58216327A (en) | 1982-06-11 | 1982-06-11 | Field emission cathode |
| JP5089688A JPH0628969A (en) | 1982-06-11 | 1993-04-16 | Field emission cathode |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57099219A JPS58216327A (en) | 1982-06-11 | 1982-06-11 | Field emission cathode |
| JP5089688A JPH0628969A (en) | 1982-06-11 | 1993-04-16 | Field emission cathode |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5089688A Division JPH0628969A (en) | 1982-06-11 | 1993-04-16 | Field emission cathode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58216327A JPS58216327A (en) | 1983-12-16 |
| JPH0437530B2 true JPH0437530B2 (en) | 1992-06-19 |
Family
ID=26431099
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57099219A Granted JPS58216327A (en) | 1982-06-11 | 1982-06-11 | Field emission cathode |
| JP5089688A Pending JPH0628969A (en) | 1982-06-11 | 1993-04-16 | Field emission cathode |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5089688A Pending JPH0628969A (en) | 1982-06-11 | 1993-04-16 | Field emission cathode |
Country Status (1)
| Country | Link |
|---|---|
| JP (2) | JPS58216327A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004095494A1 (en) * | 2003-04-22 | 2004-11-04 | Matsushita Electric Industrial Co. Ltd. | Electron-emitting material, its producing method, electron-emitting device using same, and image drawing device |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2718144B2 (en) * | 1989-02-21 | 1998-02-25 | 松下電器産業株式会社 | Field emission cold cathode |
| US6586889B1 (en) | 2000-06-21 | 2003-07-01 | Si Diamond Technology, Inc. | MEMS field emission device |
| US6819034B1 (en) | 2000-08-21 | 2004-11-16 | Si Diamond Technology, Inc. | Carbon flake cold cathode |
| US6664728B2 (en) | 2000-09-22 | 2003-12-16 | Nano-Proprietary, Inc. | Carbon nanotubes with nitrogen content |
| US6885022B2 (en) | 2000-12-08 | 2005-04-26 | Si Diamond Technology, Inc. | Low work function material |
| GB0106358D0 (en) * | 2001-03-13 | 2001-05-02 | Printable Field Emitters Ltd | Field emission materials and devices |
| US6739932B2 (en) | 2001-06-07 | 2004-05-25 | Si Diamond Technology, Inc. | Field emission display using carbon nanotubes and methods of making the same |
| US6700454B2 (en) | 2001-06-29 | 2004-03-02 | Zvi Yaniv | Integrated RF array using carbon nanotube cathodes |
| US6897603B2 (en) | 2001-08-24 | 2005-05-24 | Si Diamond Technology, Inc. | Catalyst for carbon nanotube growth |
| US6979947B2 (en) | 2002-07-09 | 2005-12-27 | Si Diamond Technology, Inc. | Nanotriode utilizing carbon nanotubes and fibers |
| JP2007080704A (en) * | 2005-09-15 | 2007-03-29 | Mie Univ | Field emission type electron gun and its power supply voltage control method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6054735B2 (en) * | 1979-10-19 | 1985-12-02 | 株式会社日立製作所 | field emission cathode |
-
1982
- 1982-06-11 JP JP57099219A patent/JPS58216327A/en active Granted
-
1993
- 1993-04-16 JP JP5089688A patent/JPH0628969A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004095494A1 (en) * | 2003-04-22 | 2004-11-04 | Matsushita Electric Industrial Co. Ltd. | Electron-emitting material, its producing method, electron-emitting device using same, and image drawing device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58216327A (en) | 1983-12-16 |
| JPH0628969A (en) | 1994-02-04 |
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