JPH0437106A - Thin film capacitor - Google Patents

Thin film capacitor

Info

Publication number
JPH0437106A
JPH0437106A JP2144782A JP14478290A JPH0437106A JP H0437106 A JPH0437106 A JP H0437106A JP 2144782 A JP2144782 A JP 2144782A JP 14478290 A JP14478290 A JP 14478290A JP H0437106 A JPH0437106 A JP H0437106A
Authority
JP
Japan
Prior art keywords
substrate
electrodes
nickel
film
thick
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2144782A
Other languages
Japanese (ja)
Inventor
Atsushi Katsube
淳 勝部
Mikio Haga
羽賀 幹夫
Hisao Matsuura
松浦 久雄
Junji Kojima
淳司 小島
Toshifumi Kondo
近藤 利文
Nobuyuki Kume
久米 信行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2144782A priority Critical patent/JPH0437106A/en
Publication of JPH0437106A publication Critical patent/JPH0437106A/en
Pending legal-status Critical Current

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  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

PURPOSE:To obtain a thin film capacitor in which the surface of an inner electrode is not corroded and not intruded by flame sprayed metal of an outer electrode by providing an inner electrode arranged to the end of a substrate at each one layer of nickel or nickel-chromium alloy, and outer electrodes covered with protective films at dielectrics alternately laminated with the inner electrode and formed at both ends of the substrate. CONSTITUTION:Two or more layers of inner electrodes 2 in which nickel or nickel-chromium alloy is arranged at each layer to the end of a substrate 1 on the substrate 1 having insulation, and outer electrodes 5 in which dielectrics 3 of organic thin films alternately laminated with the electrodes 2 are covered with protective films 4 at both ends of the substrate 1 are provided. For example, Ni of 0.03mum thick of a film by a vacuum depositing method and an aromatic polyurea layer of 0.4mum thick of a film by a depositing polymerizing method are alternately laminated as the electrodes 2 on the substrate 1 of alumina covered with glass of 20mum thick except both ends, then a silicon nitride film of 2mum thick is formed as a protective film 4 by a plasma CVD method, and the electrodes 5 are formed of copper alloy of 20mum thick by a reduced pressure plasma spraying method.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は各種電子機器等に使用する薄膜コンデンサに関
する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to thin film capacitors used in various electronic devices.

従来の技術 近年、電子機器の急速な小型化、高性能化にともない電
子部品の小型化の要請が強まってきている。コンデンサ
の小型化には、誘電体の誘電率を大きくしたり誘電体の
厚さを薄くする方法がある。
BACKGROUND OF THE INVENTION In recent years, with the rapid miniaturization and higher performance of electronic devices, there has been an increasing demand for miniaturization of electronic components. Capacitors can be made smaller by increasing the dielectric constant of the dielectric or by reducing the thickness of the dielectric.

従来の薄膜コンデンサで誘電体として有機材料を使用し
たフィルムコンデンサなどではフィルムを薄くすること
によって小型化している。また誘電体が有機材料の薄膜
コンデンサは内部電極として導電性のよいAeまたはA
e合金が使用され、外部電極はCu等の金属を溶射して
形成されている。
Conventional thin film capacitors, such as film capacitors that use organic materials as dielectrics, are made smaller by making the film thinner. In addition, in thin film capacitors whose dielectric material is an organic material, the internal electrodes are Ae or Ae, which have good conductivity.
E-alloy is used, and the external electrodes are formed by thermal spraying a metal such as Cu.

発明が解決しようとする課題 しかしながら上記の従来の構成では、AeまたはAe合
金の耐食性が弱いので、高温多湿下で基板や有機薄膜か
らのアルカリ成分等の影響で内部電極の腐食が発生する
という問題点、および内部電極の膜厚が十分でないと外
部電極形成時に内部電極が外部電極の溶射金属に喰われ
やすいという問題点を有していた。
Problems to be Solved by the Invention However, in the above-mentioned conventional configuration, since the corrosion resistance of Ae or Ae alloy is weak, there is a problem that corrosion of the internal electrodes occurs due to the influence of alkaline components from the substrate and organic thin film under high temperature and high humidity. Another problem is that if the film thickness of the internal electrode is not sufficient, the internal electrode is likely to be eaten away by the sprayed metal of the external electrode during formation of the external electrode.

本発明は上記従来の問題点を解決するもので、内部電極
の表面が腐食せず、かつ外部電極の溶射金属に喰われな
い薄膜コンデンサを提供することを目的とする。
The present invention solves the above conventional problems, and aims to provide a thin film capacitor in which the surfaces of internal electrodes are not corroded and are not eaten by the sprayed metal of the external electrodes.

課題を解決するための手段 この目的を達成するために本発明の薄膜コンデンサは、
絶縁性を有する基板(以下基板という)の表面にニッケ
ルまたはニッケルクロム合金を1層毎に基板の端部まで
配設した2層以上の内部電極と、この内部電極と交互に
積層された有機薄膜の誘電体とを保護膜で被覆し、基板
の両端部に外部電極を備えた構成を有している。
Means for Solving the Problems To achieve this object, the thin film capacitor of the present invention comprises:
Two or more internal electrodes made of nickel or nickel-chromium alloy arranged layer by layer up to the edge of the substrate on the surface of an insulating substrate (hereinafter referred to as the substrate), and organic thin films laminated alternately with the internal electrodes. The dielectric material is covered with a protective film, and external electrodes are provided at both ends of the substrate.

作用 この構成によって基板あるいは有機薄膜からのアルカリ
成分等による電極の腐食はな(なり外部電極による内部
電極の喰われは発生しないこととなる。
Function: With this configuration, the electrodes are not corroded by alkaline components from the substrate or the organic thin film (and the internal electrodes are not eaten away by the external electrodes).

実施例 以下本発明の一実施例について、図面を参照しながら説
明する。
EXAMPLE An example of the present invention will be described below with reference to the drawings.

第1図に示すように基板1の上に内部電極2と誘電体3
を交互に積層し内部電極3の両端部を除いた表面を保護
膜4で被覆し基板1の両端部に内部電極3に導通した外
部電極5を形成する。
As shown in FIG.
are alternately laminated, the surface of the internal electrode 3 except for both ends is covered with a protective film 4, and external electrodes 5 which are electrically connected to the internal electrode 3 are formed at both ends of the substrate 1.

以下に実施例を示しさらに詳しく本発明について説明す
る。
EXAMPLES The present invention will be explained in more detail with reference to Examples below.

(実施例1) 両端部を除く表面に膜厚寸法が20amのガラスを被覆
したアルミナ製の基板1の上に内部電極2として真空蒸
着法で膜厚寸法が0.03μmのNiを、誘電体3とし
て蒸着重合法で膜厚寸法が0.4μmの芳香族ボリュリ
ア膜を交互に積層した後、保護膜4としてプラズマCV
D法で窒化シリコン膜を2μmの厚さで形成し、外部電
極5を減圧プラズマ溶射法で膜厚寸法が20μmの銅合
金で形成する。
(Example 1) Ni with a thickness of 0.03 μm was deposited as an internal electrode 2 on a substrate 1 made of alumina whose surface, excluding both ends, was coated with glass with a thickness of 20 μm as a dielectric material. As 3, aromatic voluria films with a film thickness of 0.4 μm were alternately laminated by vapor deposition polymerization method, and then plasma CV was applied as protective film 4.
A silicon nitride film is formed with a thickness of 2 μm using the D method, and an external electrode 5 is formed of a copper alloy with a film thickness of 20 μm using a low pressure plasma spraying method.

(実施例2) アルミナ製の基板1上に内部電極2としてスパッタリン
グ法で膜厚寸法が0.1μmのニッケルクロム合金を、
誘電体3として、蒸着重合法により膜厚寸法が0.2μ
mの芳香族ポリイミド膜を交互に20層積層した後、保
護膜4としてプラズマCVD法で窒化シリコン膜を2μ
mの厚さで形成し、外部電極5を減圧プラズマ溶射法で
膜厚寸法が10μmの鋼合金で形成する。
(Example 2) A nickel-chromium alloy with a film thickness of 0.1 μm was deposited as an internal electrode 2 on an alumina substrate 1 by a sputtering method.
The dielectric material 3 has a film thickness of 0.2μ by vapor deposition polymerization.
After alternately laminating 20 layers of aromatic polyimide films with a thickness of 20 m, a 2 μm silicon nitride film was deposited as a protective film 4 using a plasma CVD method.
The external electrode 5 is formed of a steel alloy with a thickness of 10 μm using a low pressure plasma spraying method.

以上のように構成された薄膜コンデンサについて高湿ラ
イフ試験(温度60℃、湿度95%で1000時間放置
)を行った結果、内部電極の腐食は見られずコンデンサ
の容量変化もなく安定していた。
The thin film capacitor constructed as described above was subjected to a high humidity life test (left at a temperature of 60°C and humidity of 95% for 1000 hours), and the results showed that there was no corrosion of the internal electrodes and the capacitor remained stable with no change in capacitance. .

以上のように本発明によれば、内部電極の材料を耐食性
の強いニッケルまたはニッケルクロム合金とすることに
より高湿試験においても内部電極の表面が腐食されず、
さらに外部電極の溶射金属による内部電極の喰われをな
くすることができ、高品質で信頼性の高いものにするこ
とができる。
As described above, according to the present invention, by using nickel or nickel chromium alloy with strong corrosion resistance as the material of the internal electrodes, the surfaces of the internal electrodes are not corroded even in high humidity tests.
Furthermore, it is possible to prevent the internal electrodes from being eaten away by the sprayed metal on the external electrodes, resulting in high quality and high reliability.

したがって薄膜コンデンサの高性能化・小形化・低コス
ト化を図ることができる。
Therefore, it is possible to achieve higher performance, smaller size, and lower cost of the thin film capacitor.

発明の効果 以上の実施例の説明からも明らがなように本発明は、基
板の表面にニッケルまたはニッケルクロム合金を1層毎
に基板の端部まで配設した2層以上の内部電極とこの内
部電極と交互に積層された有機薄膜の誘電体を保護膜で
被覆し、基板の両端部に外it極を備えた構成により内
部電極の表面が腐食されず、かつ外部電極の溶射金属に
喰われない高品質で信頼性の高い優れた薄膜コンデンサ
を実現できるものである。
Effects of the Invention As is clear from the description of the embodiments above, the present invention has two or more layers of internal electrodes in which nickel or nickel-chromium alloy is disposed layer by layer on the surface of the substrate up to the edge of the substrate. The organic thin film dielectric layer alternately laminated with the internal electrodes is covered with a protective film, and the outer IT electrodes are provided at both ends of the substrate, so that the surface of the internal electrodes will not be corroded and the sprayed metal of the external electrodes will not be corroded. This makes it possible to create excellent thin-film capacitors that are of high quality and highly reliable and will not be devoured.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の薄膜コンデンサの構成を示
す断面図である。 1・・・・・・基板、2・・・・・・内部電極、3・・
・・・・誘電体、4・・・・・・保護膜、5・・・・・
・外部電極。
FIG. 1 is a sectional view showing the structure of a thin film capacitor according to an embodiment of the present invention. 1...Substrate, 2...Internal electrode, 3...
...Dielectric, 4...Protective film, 5...
・External electrode.

Claims (2)

【特許請求の範囲】[Claims] (1)絶縁性を有する基板の表面にニッケルまたはニッ
ケルクロム合金を1層毎に前記基板の端部まで配設した
2層以上の内部電極と、前記内部電極と交互に積層され
た有機薄膜の誘電体とを保護膜で被覆し、前記基板の両
端部に外部電極を備えた薄膜コンデンサ。
(1) Two or more layers of internal electrodes in which nickel or nickel-chromium alloy is disposed layer by layer up to the edge of the substrate on the surface of an insulating substrate, and organic thin films laminated alternately with the internal electrodes. A thin film capacitor that has a dielectric covered with a protective film and has external electrodes on both ends of the substrate.
(2)基板の表面のうち両端部以外の表面にガラスの被
覆層を設けた請求項1記載の薄膜コンデンサ。
(2) The thin film capacitor according to claim 1, wherein a glass coating layer is provided on a surface of the substrate other than both ends.
JP2144782A 1990-06-01 1990-06-01 Thin film capacitor Pending JPH0437106A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2144782A JPH0437106A (en) 1990-06-01 1990-06-01 Thin film capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2144782A JPH0437106A (en) 1990-06-01 1990-06-01 Thin film capacitor

Publications (1)

Publication Number Publication Date
JPH0437106A true JPH0437106A (en) 1992-02-07

Family

ID=15370315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2144782A Pending JPH0437106A (en) 1990-06-01 1990-06-01 Thin film capacitor

Country Status (1)

Country Link
JP (1) JPH0437106A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997030326A1 (en) * 1996-02-14 1997-08-21 Bicc Public Limited Company Capacitive gap measurement device
JP2009267376A (en) * 2008-03-31 2009-11-12 Tdk Corp Thin film capacitor and method of manufacturing the same
EP3031848A1 (en) 2014-12-09 2016-06-15 ABB Technology Ltd Dielectric material and dielectric film

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4930865A (en) * 1972-07-20 1974-03-19
JPS5498952A (en) * 1978-01-20 1979-08-04 Nippon Electric Co Method of producing thin film condenser
JPH02121313A (en) * 1988-10-29 1990-05-09 Matsushita Electric Ind Co Ltd Multilayer thin film capacitor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4930865A (en) * 1972-07-20 1974-03-19
JPS5498952A (en) * 1978-01-20 1979-08-04 Nippon Electric Co Method of producing thin film condenser
JPH02121313A (en) * 1988-10-29 1990-05-09 Matsushita Electric Ind Co Ltd Multilayer thin film capacitor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997030326A1 (en) * 1996-02-14 1997-08-21 Bicc Public Limited Company Capacitive gap measurement device
JP2009267376A (en) * 2008-03-31 2009-11-12 Tdk Corp Thin film capacitor and method of manufacturing the same
EP3031848A1 (en) 2014-12-09 2016-06-15 ABB Technology Ltd Dielectric material and dielectric film

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