JPH0437106A - Thin film capacitor - Google Patents
Thin film capacitorInfo
- Publication number
- JPH0437106A JPH0437106A JP2144782A JP14478290A JPH0437106A JP H0437106 A JPH0437106 A JP H0437106A JP 2144782 A JP2144782 A JP 2144782A JP 14478290 A JP14478290 A JP 14478290A JP H0437106 A JPH0437106 A JP H0437106A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrodes
- nickel
- film
- thick
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 19
- 239000003990 capacitor Substances 0.000 title claims abstract description 16
- 239000010408 film Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000001681 protective effect Effects 0.000 claims abstract description 10
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 claims abstract description 7
- 229910000990 Ni alloy Inorganic materials 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims 3
- 239000011247 coating layer Substances 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 6
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 3
- 125000003118 aryl group Chemical group 0.000 abstract description 3
- 238000007750 plasma spraying Methods 0.000 abstract description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 3
- 229910000881 Cu alloy Inorganic materials 0.000 abstract description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 2
- 229920002396 Polyurea Polymers 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 230000000379 polymerizing effect Effects 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は各種電子機器等に使用する薄膜コンデンサに関
する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to thin film capacitors used in various electronic devices.
従来の技術
近年、電子機器の急速な小型化、高性能化にともない電
子部品の小型化の要請が強まってきている。コンデンサ
の小型化には、誘電体の誘電率を大きくしたり誘電体の
厚さを薄くする方法がある。BACKGROUND OF THE INVENTION In recent years, with the rapid miniaturization and higher performance of electronic devices, there has been an increasing demand for miniaturization of electronic components. Capacitors can be made smaller by increasing the dielectric constant of the dielectric or by reducing the thickness of the dielectric.
従来の薄膜コンデンサで誘電体として有機材料を使用し
たフィルムコンデンサなどではフィルムを薄くすること
によって小型化している。また誘電体が有機材料の薄膜
コンデンサは内部電極として導電性のよいAeまたはA
e合金が使用され、外部電極はCu等の金属を溶射して
形成されている。Conventional thin film capacitors, such as film capacitors that use organic materials as dielectrics, are made smaller by making the film thinner. In addition, in thin film capacitors whose dielectric material is an organic material, the internal electrodes are Ae or Ae, which have good conductivity.
E-alloy is used, and the external electrodes are formed by thermal spraying a metal such as Cu.
発明が解決しようとする課題
しかしながら上記の従来の構成では、AeまたはAe合
金の耐食性が弱いので、高温多湿下で基板や有機薄膜か
らのアルカリ成分等の影響で内部電極の腐食が発生する
という問題点、および内部電極の膜厚が十分でないと外
部電極形成時に内部電極が外部電極の溶射金属に喰われ
やすいという問題点を有していた。Problems to be Solved by the Invention However, in the above-mentioned conventional configuration, since the corrosion resistance of Ae or Ae alloy is weak, there is a problem that corrosion of the internal electrodes occurs due to the influence of alkaline components from the substrate and organic thin film under high temperature and high humidity. Another problem is that if the film thickness of the internal electrode is not sufficient, the internal electrode is likely to be eaten away by the sprayed metal of the external electrode during formation of the external electrode.
本発明は上記従来の問題点を解決するもので、内部電極
の表面が腐食せず、かつ外部電極の溶射金属に喰われな
い薄膜コンデンサを提供することを目的とする。The present invention solves the above conventional problems, and aims to provide a thin film capacitor in which the surfaces of internal electrodes are not corroded and are not eaten by the sprayed metal of the external electrodes.
課題を解決するための手段
この目的を達成するために本発明の薄膜コンデンサは、
絶縁性を有する基板(以下基板という)の表面にニッケ
ルまたはニッケルクロム合金を1層毎に基板の端部まで
配設した2層以上の内部電極と、この内部電極と交互に
積層された有機薄膜の誘電体とを保護膜で被覆し、基板
の両端部に外部電極を備えた構成を有している。Means for Solving the Problems To achieve this object, the thin film capacitor of the present invention comprises:
Two or more internal electrodes made of nickel or nickel-chromium alloy arranged layer by layer up to the edge of the substrate on the surface of an insulating substrate (hereinafter referred to as the substrate), and organic thin films laminated alternately with the internal electrodes. The dielectric material is covered with a protective film, and external electrodes are provided at both ends of the substrate.
作用
この構成によって基板あるいは有機薄膜からのアルカリ
成分等による電極の腐食はな(なり外部電極による内部
電極の喰われは発生しないこととなる。Function: With this configuration, the electrodes are not corroded by alkaline components from the substrate or the organic thin film (and the internal electrodes are not eaten away by the external electrodes).
実施例
以下本発明の一実施例について、図面を参照しながら説
明する。EXAMPLE An example of the present invention will be described below with reference to the drawings.
第1図に示すように基板1の上に内部電極2と誘電体3
を交互に積層し内部電極3の両端部を除いた表面を保護
膜4で被覆し基板1の両端部に内部電極3に導通した外
部電極5を形成する。As shown in FIG.
are alternately laminated, the surface of the internal electrode 3 except for both ends is covered with a protective film 4, and external electrodes 5 which are electrically connected to the internal electrode 3 are formed at both ends of the substrate 1.
以下に実施例を示しさらに詳しく本発明について説明す
る。EXAMPLES The present invention will be explained in more detail with reference to Examples below.
(実施例1)
両端部を除く表面に膜厚寸法が20amのガラスを被覆
したアルミナ製の基板1の上に内部電極2として真空蒸
着法で膜厚寸法が0.03μmのNiを、誘電体3とし
て蒸着重合法で膜厚寸法が0.4μmの芳香族ボリュリ
ア膜を交互に積層した後、保護膜4としてプラズマCV
D法で窒化シリコン膜を2μmの厚さで形成し、外部電
極5を減圧プラズマ溶射法で膜厚寸法が20μmの銅合
金で形成する。(Example 1) Ni with a thickness of 0.03 μm was deposited as an internal electrode 2 on a substrate 1 made of alumina whose surface, excluding both ends, was coated with glass with a thickness of 20 μm as a dielectric material. As 3, aromatic voluria films with a film thickness of 0.4 μm were alternately laminated by vapor deposition polymerization method, and then plasma CV was applied as protective film 4.
A silicon nitride film is formed with a thickness of 2 μm using the D method, and an external electrode 5 is formed of a copper alloy with a film thickness of 20 μm using a low pressure plasma spraying method.
(実施例2)
アルミナ製の基板1上に内部電極2としてスパッタリン
グ法で膜厚寸法が0.1μmのニッケルクロム合金を、
誘電体3として、蒸着重合法により膜厚寸法が0.2μ
mの芳香族ポリイミド膜を交互に20層積層した後、保
護膜4としてプラズマCVD法で窒化シリコン膜を2μ
mの厚さで形成し、外部電極5を減圧プラズマ溶射法で
膜厚寸法が10μmの鋼合金で形成する。(Example 2) A nickel-chromium alloy with a film thickness of 0.1 μm was deposited as an internal electrode 2 on an alumina substrate 1 by a sputtering method.
The dielectric material 3 has a film thickness of 0.2μ by vapor deposition polymerization.
After alternately laminating 20 layers of aromatic polyimide films with a thickness of 20 m, a 2 μm silicon nitride film was deposited as a protective film 4 using a plasma CVD method.
The external electrode 5 is formed of a steel alloy with a thickness of 10 μm using a low pressure plasma spraying method.
以上のように構成された薄膜コンデンサについて高湿ラ
イフ試験(温度60℃、湿度95%で1000時間放置
)を行った結果、内部電極の腐食は見られずコンデンサ
の容量変化もなく安定していた。The thin film capacitor constructed as described above was subjected to a high humidity life test (left at a temperature of 60°C and humidity of 95% for 1000 hours), and the results showed that there was no corrosion of the internal electrodes and the capacitor remained stable with no change in capacitance. .
以上のように本発明によれば、内部電極の材料を耐食性
の強いニッケルまたはニッケルクロム合金とすることに
より高湿試験においても内部電極の表面が腐食されず、
さらに外部電極の溶射金属による内部電極の喰われをな
くすることができ、高品質で信頼性の高いものにするこ
とができる。As described above, according to the present invention, by using nickel or nickel chromium alloy with strong corrosion resistance as the material of the internal electrodes, the surfaces of the internal electrodes are not corroded even in high humidity tests.
Furthermore, it is possible to prevent the internal electrodes from being eaten away by the sprayed metal on the external electrodes, resulting in high quality and high reliability.
したがって薄膜コンデンサの高性能化・小形化・低コス
ト化を図ることができる。Therefore, it is possible to achieve higher performance, smaller size, and lower cost of the thin film capacitor.
発明の効果
以上の実施例の説明からも明らがなように本発明は、基
板の表面にニッケルまたはニッケルクロム合金を1層毎
に基板の端部まで配設した2層以上の内部電極とこの内
部電極と交互に積層された有機薄膜の誘電体を保護膜で
被覆し、基板の両端部に外it極を備えた構成により内
部電極の表面が腐食されず、かつ外部電極の溶射金属に
喰われない高品質で信頼性の高い優れた薄膜コンデンサ
を実現できるものである。Effects of the Invention As is clear from the description of the embodiments above, the present invention has two or more layers of internal electrodes in which nickel or nickel-chromium alloy is disposed layer by layer on the surface of the substrate up to the edge of the substrate. The organic thin film dielectric layer alternately laminated with the internal electrodes is covered with a protective film, and the outer IT electrodes are provided at both ends of the substrate, so that the surface of the internal electrodes will not be corroded and the sprayed metal of the external electrodes will not be corroded. This makes it possible to create excellent thin-film capacitors that are of high quality and highly reliable and will not be devoured.
第1図は本発明の一実施例の薄膜コンデンサの構成を示
す断面図である。
1・・・・・・基板、2・・・・・・内部電極、3・・
・・・・誘電体、4・・・・・・保護膜、5・・・・・
・外部電極。FIG. 1 is a sectional view showing the structure of a thin film capacitor according to an embodiment of the present invention. 1...Substrate, 2...Internal electrode, 3...
...Dielectric, 4...Protective film, 5...
・External electrode.
Claims (2)
ケルクロム合金を1層毎に前記基板の端部まで配設した
2層以上の内部電極と、前記内部電極と交互に積層され
た有機薄膜の誘電体とを保護膜で被覆し、前記基板の両
端部に外部電極を備えた薄膜コンデンサ。(1) Two or more layers of internal electrodes in which nickel or nickel-chromium alloy is disposed layer by layer up to the edge of the substrate on the surface of an insulating substrate, and organic thin films laminated alternately with the internal electrodes. A thin film capacitor that has a dielectric covered with a protective film and has external electrodes on both ends of the substrate.
覆層を設けた請求項1記載の薄膜コンデンサ。(2) The thin film capacitor according to claim 1, wherein a glass coating layer is provided on a surface of the substrate other than both ends.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2144782A JPH0437106A (en) | 1990-06-01 | 1990-06-01 | Thin film capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2144782A JPH0437106A (en) | 1990-06-01 | 1990-06-01 | Thin film capacitor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0437106A true JPH0437106A (en) | 1992-02-07 |
Family
ID=15370315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2144782A Pending JPH0437106A (en) | 1990-06-01 | 1990-06-01 | Thin film capacitor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0437106A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997030326A1 (en) * | 1996-02-14 | 1997-08-21 | Bicc Public Limited Company | Capacitive gap measurement device |
JP2009267376A (en) * | 2008-03-31 | 2009-11-12 | Tdk Corp | Thin film capacitor and method of manufacturing the same |
EP3031848A1 (en) | 2014-12-09 | 2016-06-15 | ABB Technology Ltd | Dielectric material and dielectric film |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4930865A (en) * | 1972-07-20 | 1974-03-19 | ||
JPS5498952A (en) * | 1978-01-20 | 1979-08-04 | Nippon Electric Co | Method of producing thin film condenser |
JPH02121313A (en) * | 1988-10-29 | 1990-05-09 | Matsushita Electric Ind Co Ltd | Multilayer thin film capacitor |
-
1990
- 1990-06-01 JP JP2144782A patent/JPH0437106A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4930865A (en) * | 1972-07-20 | 1974-03-19 | ||
JPS5498952A (en) * | 1978-01-20 | 1979-08-04 | Nippon Electric Co | Method of producing thin film condenser |
JPH02121313A (en) * | 1988-10-29 | 1990-05-09 | Matsushita Electric Ind Co Ltd | Multilayer thin film capacitor |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997030326A1 (en) * | 1996-02-14 | 1997-08-21 | Bicc Public Limited Company | Capacitive gap measurement device |
JP2009267376A (en) * | 2008-03-31 | 2009-11-12 | Tdk Corp | Thin film capacitor and method of manufacturing the same |
EP3031848A1 (en) | 2014-12-09 | 2016-06-15 | ABB Technology Ltd | Dielectric material and dielectric film |
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