JPH04370612A - Electric contact - Google Patents
Electric contactInfo
- Publication number
- JPH04370612A JPH04370612A JP649191A JP649191A JPH04370612A JP H04370612 A JPH04370612 A JP H04370612A JP 649191 A JP649191 A JP 649191A JP 649191 A JP649191 A JP 649191A JP H04370612 A JPH04370612 A JP H04370612A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- contact
- metal
- ceramic layer
- electrical contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- 239000000919 ceramic Substances 0.000 claims abstract description 36
- 239000004020 conductor Substances 0.000 claims abstract description 18
- 238000002844 melting Methods 0.000 claims abstract description 12
- 230000008018 melting Effects 0.000 claims abstract description 12
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 8
- 239000000956 alloy Substances 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 8
- 150000002739 metals Chemical class 0.000 claims abstract description 7
- 150000004767 nitrides Chemical class 0.000 claims abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000003870 refractory metal Substances 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 150000001247 metal acetylides Chemical class 0.000 claims 1
- 238000005260 corrosion Methods 0.000 abstract description 9
- 230000007797 corrosion Effects 0.000 abstract description 9
- 230000003647 oxidation Effects 0.000 abstract description 9
- 238000007254 oxidation reaction Methods 0.000 abstract description 9
- 238000000926 separation method Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 72
- 229910052718 tin Inorganic materials 0.000 description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 13
- 229910001369 Brass Inorganic materials 0.000 description 7
- 239000010951 brass Substances 0.000 description 7
- 229910000881 Cu alloy Inorganic materials 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000007774 longterm Effects 0.000 description 4
- 239000010953 base metal Substances 0.000 description 3
- 238000009429 electrical wiring Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 101150000971 SUS3 gene Proteins 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- -1 adhesion is improved Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Contacts (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】この発明は、自動車および産業機
器などの電気配線用端子、リレー、スイッチ等の電気接
点に関し、特に長期間の経時変化が問題になるものや、
使用温度の上昇が予想される分野に用いられる電気接点
に関する。[Industrial Field of Application] This invention relates to electrical contacts such as electrical wiring terminals, relays, switches, etc. for automobiles and industrial equipment, especially those where long-term deterioration is a problem,
This invention relates to electrical contacts used in fields where usage temperatures are expected to rise.
【０００２】0002
【従来の技術】電気回路において、電気的に接続すべき
１対の導体で、互いに接触し合う部分すなわち電気接点
は、種々の特性が要求される。その中で重要な特性は、
たとえば接触抵抗が低いこと、融解温度が高いこと、耐
溶着性がよいことなどである。また、長期間使用され、
かつその間に風雨にさらされるものや、使用温度が上昇
されるもの、あるいは高信頼性が要求されるものは、さ
らに耐食性、耐磨耗性、耐熱性等に優れていなければな
らない。2. Description of the Related Art In an electric circuit, the portions of a pair of conductors that come into contact with each other, that is, the electrical contacts, are required to have various characteristics. Among them, the important characteristics are
For example, it has low contact resistance, high melting temperature, and good welding resistance. It is also used for a long time,
Additionally, items that are exposed to wind and rain, those that are subject to elevated operating temperatures, or that require high reliability must also have excellent corrosion resistance, abrasion resistance, heat resistance, etc.
【０００３】従来、自動車および産業機器などに用いら
れる端子金具には、黄銅、燐青銅、場合によってはステ
ンレス銅などのような銅合金の電気接点、ならびに銅お
よび銅合金等の表面に、ＳｎまたはＮｉなどをメッキし
た電気接点が使用されてきた。一方、瞬断等が問題とな
り、微弱電流が流れるコンピュータ制御回路などには、
ステンレス等の母材にＡｕメッキが施された電気接点が
用いられてきた。Conventionally, terminal fittings used in automobiles and industrial equipment have electrical contacts made of brass, phosphor bronze, and in some cases copper alloys such as stainless copper, and the surfaces of copper and copper alloys are coated with Sn or copper. Electrical contacts plated with Ni or the like have been used. On the other hand, instantaneous interruptions are a problem, and computer control circuits, etc., where weak currents flow,
Electrical contacts in which a base material such as stainless steel is plated with Au have been used.
【０００４】0004
【発明が解決しようとする課題】銅合金の電気接点は、
安価であるが、耐酸化性に劣るため、長期間使用により
酸化されて接触抵抗が高くなるという大きな欠点を有し
ている。[Problem to be solved by the invention] Copper alloy electrical contacts are
Although it is inexpensive, it has poor oxidation resistance, so it has a major drawback that it becomes oxidized after long-term use and increases contact resistance.
【０００５】銅および銅合金等の表面に、ＳｎまたはＮ
ｉなどをメッキした電気接点は、耐酸化性が銅合金のも
のより向上しているが、接触抵抗が相対的に高く、化学
薬品等に耐する耐食性も劣るという欠点を有している。[0005] Sn or N is added to the surface of copper and copper alloys.
Electrical contacts plated with i or the like have better oxidation resistance than those made of copper alloys, but have the drawbacks of relatively high contact resistance and poor corrosion resistance against chemicals and the like.
【０００６】一方、Ａｕメッキが施された電気接点は、
耐酸化性および耐食性に優れ、接触抵抗も室温の条件で
は低く安定している。このため、高信頼性が要求される
接点に多く用いられる。しかしながら、純Ａｕメッキは
、９０℃以上の温度に置かれると、粘着性および凝着性
が高くなるので、接触される他方の導体によって磨耗さ
れやすくなる。また、不純物によって硬質化されたＡｕ
メッキの場合でも、１００℃程度で不純物が粒界から表
面に析出して接触抵抗を増大させる。このように、Ａｕ
メッキ接点は耐熱性に関して劣っている。さらに、Ａｕ
は高価である。一方、Ａｕメッキ接点の母材としてしば
しば使用されるステンレスは、耐熱性に問題はないもの
の、それ自体の固有抵抗値が高く（たとえば、ＳＵＳ３
０４で７０μΩｃｍ程度）、さらに表面に不導体層であ
る酸化クロム皮膜を有するため、接触抵抗も大きくする
。On the other hand, electrical contacts plated with Au are
It has excellent oxidation and corrosion resistance, and its contact resistance is low and stable at room temperature. For this reason, it is often used for contacts that require high reliability. However, when pure Au plating is placed at a temperature of 90° C. or higher, it becomes highly sticky and adhesive, so it is easily abraded by the other conductor that is in contact with it. In addition, Au hardened by impurities
Even in the case of plating, impurities precipitate from grain boundaries to the surface at about 100° C., increasing contact resistance. In this way, Au
Plated contacts have poor heat resistance. Furthermore, Au
is expensive. On the other hand, stainless steel, which is often used as the base material for Au-plated contacts, has no problems with heat resistance, but has a high specific resistance value (for example, SUS3
Furthermore, since the surface has a chromium oxide film, which is a non-conducting layer, the contact resistance is also increased.
【０００７】この発明の目的は、上記問題点を解決すべ
く、耐酸化性、耐食性および耐熱性に優れ、さらに高温
にさらされても相対的に低く安定した接触抵抗値を有し
、かつ比較的安価な電気接点を提供することである。An object of the present invention is to solve the above problems by providing a contact resistance that is excellent in oxidation resistance, corrosion resistance, and heat resistance, and that has a relatively low and stable contact resistance value even when exposed to high temperatures. The purpose of this invention is to provide inexpensive electrical contacts.
【０００８】この発明にさらなる目的は、母材金属上で
導体が接触させられる部分に、耐酸化性、耐食性および
耐熱性を付与するためのコーティング層が設けられた電
気接点に関して、物理的な衝撃および／または変形によ
って、コーティング層にクラックおよび剥離が生じにく
い電気接点を提供することである。A further object of the present invention is to provide an electrical contact provided with a coating layer for imparting oxidation resistance, corrosion resistance and heat resistance to the portion of the base metal where the conductor is brought into contact. It is an object of the present invention to provide an electrical contact that is less susceptible to cracking and peeling of a coating layer due to deformation and/or deformation.
【０００９】[0009]
【課題を解決するための手段】この発明に従う電気接点
は、１対の導体の少なくとも一方に設けられる電気接点
であって、導体の表面に、高融点金属または高融点金属
の合金で形成された金属層と、金属層上に、金属層を形
成する金属または合金の窒化物、酸化物および硼化物か
らなる群から選択された少なくとも１種の材料で形成さ
れた、他方の導体に接触させるためのセラミックス層と
を備えている。[Means for Solving the Problems] An electrical contact according to the present invention is an electrical contact provided on at least one of a pair of conductors, the electrical contact being formed of a refractory metal or an alloy of refractory metals on the surface of the conductor. For contacting the other conductor, which is formed of a metal layer and at least one material selected from the group consisting of nitrides, oxides, and borides of metals or alloys forming the metal layer, on the metal layer. It is equipped with a ceramic layer.
【００１０】この明細書中の「高融点金属」は、半導体
プロセスの分野等で呼ばれている高融点金属と同等のも
のを指し、融点が多結晶Ｓｉと同等またはそれ以上の金
属を多く含む。高融点金属は、Ｍｏ、Ｗ、Ｔａ、Ｈｆ、
Ｚｒ、Ｎｂ、Ｔｉ、Ｖ、Ｒｅ、Ｃｒ、Ｐｔ、Ｉｒ、Ｏｓ
、Ｒｈを含んでいる。この発明の一態様として、これら
の金属の中よりＴｉ、Ｚｒ、Ｈｆ、Ｔａ、ＷおよびＭｏ
からなる群を抽出し、この群から少なくとも１種の金属
を用いることにより、この発明の目的をより容易に達成
することができる。[0010] In this specification, "high melting point metal" refers to a metal equivalent to a high melting point metal called in the field of semiconductor processing, etc., and contains many metals with a melting point equal to or higher than polycrystalline Si. . High melting point metals include Mo, W, Ta, Hf,
Zr, Nb, Ti, V, Re, Cr, Pt, Ir, Os
, Rh. As one aspect of the present invention, Ti, Zr, Hf, Ta, W and Mo are selected from among these metals.
By extracting the group consisting of the following and using at least one metal from this group, the object of the present invention can be more easily achieved.
【００１１】また、この発明に従う金属層は、Ｔｉを主
成分とする高融点金属で形成され、かつセラミックス層
はＴｉＮで形成されることができる。Further, the metal layer according to the present invention may be formed of a high melting point metal containing Ti as a main component, and the ceramic layer may be formed of TiN.
【００１２】さらに、この発明に従う金属層の厚みは、
約５０ｎｍ〜約２μｍの範囲とすることができる。一方
、この発明に従うセラミックス層の厚みは、約２０ｎｍ
〜約５００ｎｍの範囲とすることができる。Furthermore, the thickness of the metal layer according to the present invention is
It can range from about 50 nm to about 2 μm. On the other hand, the thickness of the ceramic layer according to the present invention is about 20 nm.
to about 500 nm.
【００１３】さらにまた、この発明に従うセラミックス
層は、外側になるにつれて窒素、炭素または硼素の含有
率を高くすることができる。Furthermore, in the ceramic layer according to the present invention, the content of nitrogen, carbon, or boron can be increased toward the outside.
【００１４】[0014]
【作用】この発明に従って、電気接点として導体に接触
されるため形成されたセラミックス層は、高融点金属ま
たはその合金の窒化物、炭化物または硼化物で構成され
いる。これらの化合物は、耐酸化性、耐食性および耐熱
性に優れている。したがって、この発明の電気接点は、
セラミックス層によりこれらの特性が付与されているた
め、長期間の使用においてもその接触抵抗値は安定して
いる。According to the invention, the ceramic layer formed to be in contact with a conductor as an electrical contact is composed of a nitride, carbide or boride of a high melting point metal or an alloy thereof. These compounds have excellent oxidation resistance, corrosion resistance, and heat resistance. Therefore, the electrical contact of this invention is
Since these characteristics are imparted by the ceramic layer, the contact resistance value remains stable even after long-term use.
【００１５】さらに、本発明者らは、常温において、こ
のセラミックス層の接触抵抗が比較的小さく、さらには
接触のための荷重を大きくするほど、接触抵抗がより小
さくなり、結果としてＡｕメッキを施した電気接点に匹
敵することを見出した。また、本発明者らは、高温にさ
らされたこの発明の電気接点が、接触荷重が小さい場合
、同様に高温にさらされたＡｕメッキ接点よりもより小
さな接触抵抗値を有することを見出した。以上のように
、この発明の電気接点は耐熱性に関して従来のＡｕメッ
キ接点よりも信頼性が高いと考えられる。Furthermore, the present inventors found that the contact resistance of this ceramic layer is relatively small at room temperature, and furthermore, as the load for contact increases, the contact resistance becomes smaller, and as a result, Au plating is applied. It was found that the electrical contact is comparable to that of the conventional electrical contacts. The inventors have also found that the electrical contacts of the present invention exposed to high temperatures have lower contact resistance values when the contact load is small than Au plated contacts also exposed to high temperatures. As described above, the electrical contact of the present invention is considered to have higher reliability than the conventional Au-plated contact in terms of heat resistance.
【００１６】さらに、上記セラミックス層は導電性であ
る。このセラミックス層の代表的なものと、その固有抵
抗値を表１に示す。Furthermore, the ceramic layer is electrically conductive. Table 1 shows typical ceramic layers and their specific resistance values.
【００１７】[0017]
【表１】[Table 1]
【００１８】これらのセラミックスは、金属に比べて高
い固有抵抗値を有するが、セラミックス層の厚さをある
程度の範囲、たとえば、約２０ｎｍ〜約５００ｎｍの範
囲に収めることによって、固有抵抗値を接触抵抗に比べ
て無視できる程度にすることができる。These ceramics have a high specific resistance value compared to metals, but by keeping the thickness of the ceramic layer within a certain range, for example, about 20 nm to about 500 nm, the specific resistance value can be lowered to the contact resistance. It can be made negligible compared to .
【００１９】一方、この発明に従って、電気接点の母材
である導体とセラミックス層の間には、セラミックス層
を形成する金属と同一の金属または合金で形成された金
属層が挟み込まれている。セラミックス層は、化学的に
安定なため、母材金属との相互拡散が起こりにくい。し
たがってセラミックス層は、母材への密着性に欠ける。
さらに、セラミックス層の硬度は、母材金属に比べ極端
に高い（１０００〜３０００Ｈｖ）ため、物理的衝撃等
により、クラックや剥離を発生させやすい。しかし、こ
の金属層を設けることによって、導体とセラミックス層
との密着性は向上させられる。その結果、電気接点が変
形させられたり、あるいは物理的衝撃が加えられたりし
ても、セラミックス層にクラックが発生したり、さらに
セラミックス層が剥離する現象自体が避けられる。さら
に、加熱−冷却の繰返しによって、導体の膨脹−収縮が
繰返される場合においても、この密着性のおかげで剥離
やクラックの発生が避けられる。On the other hand, according to the present invention, a metal layer made of the same metal or alloy as the metal forming the ceramic layer is sandwiched between the conductor, which is the base material of the electrical contact, and the ceramic layer. Since the ceramic layer is chemically stable, interdiffusion with the base metal is unlikely to occur. Therefore, the ceramic layer lacks adhesion to the base material. Furthermore, since the hardness of the ceramic layer is extremely high (1000 to 3000 Hv) compared to the base metal, cracks and peeling are likely to occur due to physical impact or the like. However, by providing this metal layer, the adhesion between the conductor and the ceramic layer is improved. As a result, even if the electrical contact is deformed or a physical impact is applied, cracks in the ceramic layer or peeling of the ceramic layer itself can be avoided. Furthermore, even when the conductor expands and contracts repeatedly due to repeated heating and cooling, this adhesiveness prevents peeling and cracking.
【００２０】耐酸化性、耐食性および耐熱性を付与する
セラミックス層の内側で、ある範囲の厚みの部分を金属
層に置換えても、これらの特性はほとんど劣化すること
がない。しかも、気相成長法によって金属層を形成させ
る速度は、セラミックス層を形成させる速度よりも５〜
１０倍大きい。したがって、このような金属層での置換
えによって密着性が向上し、かつ同等の特性を備える層
をより早く形成することができる。さらに、セラミック
ス層を部分的に金属層に置換えることにより、接触抵抗
値も低減させることができる。Even if a certain range of thickness is replaced with a metal layer inside the ceramic layer that imparts oxidation resistance, corrosion resistance, and heat resistance, these properties hardly deteriorate. Moreover, the rate at which the metal layer is formed by the vapor phase growth method is 5 to 5 times faster than the rate at which the ceramic layer is formed.
10 times bigger. Therefore, by replacing the metal layer with such a metal layer, adhesion is improved, and a layer having equivalent properties can be formed more quickly. Furthermore, by partially replacing the ceramic layer with a metal layer, the contact resistance value can also be reduced.
【００２１】さらにまた、この発明の金属層およびセラ
ミックス層は従来のＡｕメッキに比べて低コストで形成
することができる。Furthermore, the metal layer and ceramic layer of the present invention can be formed at lower cost than conventional Au plating.
【００２２】[0022]
【実施例】厚さ０．２ｍｍの黄銅板上に、スパッタリン
グにより厚さ約１００ｎｍのＴｉ層を形成した。さらに
Ｔｉ層の表面にＮ２ ガスを導入したスパッタリングに
より、厚さ約２００ｎｍのＴｉＮ層を形成した。第１図
は、このようにして得られたこの発明の一具体例を示す
断面図である。図に示すように、黄銅基板１上には、Ｔ
ｉ層２が堆積され、さらにその上にＴｉＮ層が堆積され
ている。EXAMPLE A Ti layer with a thickness of about 100 nm was formed by sputtering on a brass plate with a thickness of 0.2 mm. Furthermore, a TiN layer with a thickness of about 200 nm was formed by sputtering while introducing N2 gas onto the surface of the Ti layer. FIG. 1 is a sectional view showing a specific example of the present invention obtained in this manner. As shown in the figure, there is a T on the brass substrate 1.
An i-layer 2 is deposited, and a TiN layer is further deposited thereon.
【００２３】一方、厚さ０．２ｍｍの黄銅板上に同様の
スパッタリングにより厚さ約３００ｎｍのＴｉＮ膜のみ
を形成させた。以上のようにして層が形成された両方の
黄銅板に対して、半径４ｍｍの突き曲げ加工を行なった
。ＴｉＮ層のみが形成されたものは、約１００／ｍｍ２
の頻度で微小な点状の剥離が発生させられたのに対し
、Ｔｉ層を形成させたものは、剥離が認められなかった
。On the other hand, a TiN film with a thickness of about 300 nm was formed on a brass plate with a thickness of 0.2 mm by the same sputtering method. Both brass plates on which the layers were formed as described above were subjected to a bending process with a radius of 4 mm. When only a TiN layer is formed, the thickness is approximately 100/mm2.
On the other hand, no peeling was observed in the case where a Ti layer was formed.
【００２４】上記の３００ｎｍのＴｉＮ層のうち、内側
の１００〜２００ｎｍをＴｉ層に置換えると、接触抵抗
値が１０〜５０％まで低減させられた。このような置換
えを行なった電気接点における温度上昇時の接触抵抗の
上昇割合は、ＴｉＮ層のみの電気接点と変わらなかった
。さらに上述したように、スパッタリングによるＴｉ層
の形成速度は、Ｎ２ ガスを用いたスパッタリングによ
るＴｉＮ層の形成速度の５〜１０倍であった。When the inner 100 to 200 nm of the above 300 nm TiN layer was replaced with a Ti layer, the contact resistance value was reduced to 10 to 50%. The rate of increase in contact resistance when the temperature rose in the electrical contact in which such replacement was performed was not different from that in the electrical contact with only a TiN layer. Further, as described above, the formation rate of the Ti layer by sputtering was 5 to 10 times the formation rate of the TiN layer by sputtering using N2 gas.
【００２５】得られたＴｉ層およびＴｉＮ層を有する電
気接点の接触抵抗値は、通常、常温においてＳｎメッキ
が施された電気接点よりも小さく、Ａｕメッキが施され
た電気接点よりも大きかった。しかし、常温において接
触荷重を大きくしていくと、これらの層を有する電気接
点の接触抵抗値は減少し、Ａｕメッキ接点とほとんど変
わらなくなる。一方、これらの層を有する電気接点を２
００℃で２時間、加熱処理した後、接触抵抗値を接触荷
重を変えて測定した場合、接触荷重が比較的小さい範囲
においては、この電気接点の接触抵抗値は、同様に加熱
処理されたＡｕメッキ接点の接触抵抗値よりも小さかっ
た。以上の結果から、この発明の電気接点を接触荷重の
大きな接点に用いる場合は、ＡｕメッキとＳｎメッキの
間を埋めるものとして、また、接触荷重の小さな接点に
用いる場合は、Ａｕメッキ接点より優れた耐熱接点とし
てこの発明の電気接点を用いることができると考えられ
た。[0025] The contact resistance values of the obtained electrical contacts having the Ti layer and the TiN layer were generally smaller than the electrical contacts plated with Sn and larger than the electrical contacts plated with Au at room temperature. However, when the contact load is increased at room temperature, the contact resistance value of the electrical contact having these layers decreases and is almost no different from that of the Au-plated contact. On the other hand, two electrical contacts with these layers
After heat treatment at 00°C for 2 hours, when the contact resistance value was measured by changing the contact load, in the range where the contact load was relatively small, the contact resistance value of this electrical contact was similar to that of similarly heat-treated Au. The contact resistance value was smaller than that of plated contacts. From the above results, when the electrical contact of the present invention is used for a contact with a large contact load, it can be used as a bridge between Au plating and Sn plating, and when used for a contact with a small contact load, it is superior to an Au plated contact. It was considered that the electrical contact of the present invention could be used as a heat-resistant contact.
【００２６】上述した特性のため、この発明の電気接点
は特に挿抜式コネクタに適していた。そこで、１対の端
子を有する挿抜式コネクタにおいて、雌側端子の接点お
よびその周囲にＴｉ層およびＴｉＮ層をコーティングし
たものを作成した。第２図は、この雌側端子の一例を示
す分解斜視図である。図に示すように、端子４内の接点
部５に、Ｔｉ層およびＴｉＮ層のコーティング６（図の
斜線部分）が施されている。[0026] Due to the above-mentioned characteristics, the electrical contact of the present invention is particularly suitable for plug-in connectors. Therefore, a removable connector having a pair of terminals was created in which the contact point of the female terminal and its surroundings were coated with a Ti layer and a TiN layer. FIG. 2 is an exploded perspective view showing an example of this female terminal. As shown in the figure, a contact portion 5 within the terminal 4 is coated with a Ti layer and a TiN layer coating 6 (shaded areas in the figure).
【００２７】なお、上記実施例の母材には、黄銅の他に
、銅、その他の銅合金、アルミニウム、またはアルミニ
ウム合金を使用することができる。In addition to brass, copper, other copper alloys, aluminum, or aluminum alloys can be used as the base material in the above embodiments.
【００２８】さらに、実施例のＴｉ層およびＴｉＮ層は
、スパッタリング以外の気相薄膜形成法により形成する
こともできる。その具体例として、真空蒸着、イオンプ
レーティングおよびＣＶＤ等を挙げることができる。Furthermore, the Ti layer and TiN layer of the embodiment can also be formed by a vapor phase thin film forming method other than sputtering. Specific examples thereof include vacuum evaporation, ion plating, and CVD.
【００２９】また、この発明に従う金属層およびセラミ
ックス層は、上記実施例に限定されることなく、当業者
によって容易にその他の金属層およびセラミックス層を
形成した電気接点を得ることができる。Furthermore, the metal layer and ceramic layer according to the present invention are not limited to the above embodiments, and those skilled in the art can easily obtain electrical contacts formed with other metal layers and ceramic layers.
【００３０】[0030]
【発明の効果】以上説明したように、この発明に従う電
気接点は、優れた耐酸化性、耐食性および耐熱性を付与
されている。このような特性から、この発明は、自動車
や産業機器などの電気配線用端子、リレーおよびスイッ
チ等の電気接点において、長期使用後の変質が問題とな
るものに特に有用である。As explained above, the electrical contact according to the present invention has excellent oxidation resistance, corrosion resistance and heat resistance. Due to these characteristics, the present invention is particularly useful for electrical contacts such as electrical wiring terminals, relays, and switches for automobiles and industrial equipment, where deterioration after long-term use is a problem.
【００３１】また、この発明の電気接点は、高温にさら
されても相対的に低く安定した接触抵抗値を示す。また
、上述したようにこの発明の一具体例は、高温にさらさ
れた後、小さい接触荷重で導体に接触される場合、同様
に高温にさらされたＡｕメッキ接点よりも小さな接触抵
抗値を有している。このような特性は、上記電気配線用
端子、リレーおよびスイッチ等の電気接点において、使
用温度の上昇が予想されるものに適している他、挿抜式
コネクタ等、接触荷重が簡単に変えられる端子に広く利
用でき、それらに耐熱性を付与する。Furthermore, the electrical contact of the present invention exhibits a relatively low and stable contact resistance value even when exposed to high temperatures. Furthermore, as described above, when a specific example of the present invention is exposed to high temperatures and then contacted with a conductor with a small contact load, it has a contact resistance value that is smaller than that of an Au plated contact that is also exposed to high temperatures. are doing. These characteristics are suitable for electrical wiring terminals, relays, switches, and other electrical contacts where the operating temperature is expected to rise, as well as for terminals where the contact load can be easily changed, such as plug-and-remove connectors. They are widely available and give them heat resistance.
【００３２】さらに、この発明に従って導体とセラミッ
クス層の間に金属層を設けたことにより、セラミックス
層の導体への密着性が向上した。その結果、この発明は
、上記特性を備えながら、物理的な衝撃もしくは変形ま
たは加熱−冷却の繰返しを受けても、セラミックス層に
クラックおよび剥離が発生しにくいものとなっている。
このため、この発明の電気接点の用途は、耐熱性が要求
されるものにおいてさらに広がる。Furthermore, by providing a metal layer between the conductor and the ceramic layer according to the present invention, the adhesion of the ceramic layer to the conductor is improved. As a result, although the present invention has the above characteristics, the ceramic layer is less likely to crack or peel even when subjected to physical impact or deformation or repeated heating and cooling. Therefore, the applications of the electrical contact of the present invention are further expanded in applications where heat resistance is required.
【００３３】さらにまた、この発明の電気接点は、従来
のＡｕメッキ接点に比べてより安価に製造することがで
きる。Furthermore, the electrical contacts of the present invention can be manufactured at a lower cost than conventional Au-plated contacts.
【図１】この発明に従う電気接点の一具体例において、
基板上に、金属層およびセラミックス層が堆積された状
態を示す断面図である。FIG. 1: In one embodiment of an electrical contact according to the invention,
FIG. 2 is a cross-sectional view showing a state in which a metal layer and a ceramic layer are deposited on a substrate.
【図２】挿抜式コネクタにおいて、この発明の電気接点
を備える雌側端子の一例を示す分解斜視図であ。FIG. 2 is an exploded perspective view showing an example of a female terminal provided with the electrical contacts of the present invention in a removable connector.
１ 黄銅基板 ２ Ｔｉ層 ３ ＴｉＮ層 ４ 端子 ５ 接点部 ６ コーティング 1 Brass board 2 Ti layer 3 TiN layer 4 Terminal 5 Contact part 6 Coating
Claims (6)
設けられる電気接点であって、前記導体の表面に、高融
点金属または前記高融点金属の合金で形成された金属層
と、前記金属層上に、前記金属層を形成する金属または
合金の窒化物、炭化物および硼化物からなる群から選択
された少なくとも１種の材料で形成された、他方の導体
に接触させるためのセラミックス層を備える電気接点。1. An electrical contact provided on at least one of a pair of conductors, comprising: a metal layer formed of a refractory metal or an alloy of the refractory metal on the surface of the conductor; and the metal layer. The electrical conductor is provided with a ceramic layer thereon for contacting the other conductor, the ceramic layer being made of at least one material selected from the group consisting of nitrides, carbides, and borides of metals or alloys forming the metal layer. contact.
、Ｔａ、ＷおよびＭｏからなる群から選択された少なく
とも１種の金属である請求項１に記載の電気接点。2. The high melting point metal is Ti, Zr, Hf
2. The electrical contact according to claim 1, wherein the electrical contact is at least one metal selected from the group consisting of , Ta, W, and Mo.
融点金属で形成され、かつ前記セラミックス層が、Ｔｉ
Ｎで形成される請求項１に記載の電気接点。3. The metal layer is formed of a high melting point metal containing Ti as a main component, and the ceramic layer is formed of a high melting point metal containing Ti as a main component.
The electrical contact of claim 1 formed of N.
μｍの範囲にある請求項１に記載の電気接点。4. The thickness of the metal layer is about 50 nm to about 2 nm.
Electrical contact according to claim 1, in the μm range.
ｎｍ〜約５００ｎｍの範囲にある請求項１に記載の電気
接点。5. The thickness of the ceramic layer is about 20
The electrical contact of claim 1 in the range of nm to about 500 nm.
つれて窒素、炭素または硼素の含有率が高くなる請求項
１に記載の電気接点。6. The electrical contact according to claim 1, wherein the ceramic layer has a nitrogen, carbon, or boron content that increases toward the outside.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP649191A JPH04370612A (en) | 1991-01-23 | 1991-01-23 | Electric contact |
| US07/824,052 US5272295A (en) | 1991-01-23 | 1992-01-23 | Electric contact and method for producing the same |
| US08/118,622 US5351396A (en) | 1991-01-23 | 1993-09-10 | Method for producing electrical contact |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP649191A JPH04370612A (en) | 1991-01-23 | 1991-01-23 | Electric contact |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04370612A true JPH04370612A (en) | 1992-12-24 |
Family
ID=11639943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP649191A Pending JPH04370612A (en) | 1991-01-23 | 1991-01-23 | Electric contact |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04370612A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100390913C (en) * | 2006-03-02 | 2008-05-28 | 乐百令 | Three-layer composite electric contact manufacturing process |
| JP2010192130A (en) * | 2009-02-16 | 2010-09-02 | Alps Electric Co Ltd | Electrical contact |
-
1991
- 1991-01-23 JP JP649191A patent/JPH04370612A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100390913C (en) * | 2006-03-02 | 2008-05-28 | 乐百令 | Three-layer composite electric contact manufacturing process |
| JP2010192130A (en) * | 2009-02-16 | 2010-09-02 | Alps Electric Co Ltd | Electrical contact |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3633076A (en) | Three layer metallic contact strip at a semiconductor structural component | |
| KR20010040170A (en) | Article comprising improved noble metal-based alloys and method for making the same | |
| US4372809A (en) | Method for manufacturing solderable, temperable, thin film tracks which do not contain precious metal | |
| US5236789A (en) | Palladium alloys having utility in electrical applications | |
| US5272295A (en) | Electric contact and method for producing the same | |
| US5139891A (en) | Palladium alloys having utility in electrical applications | |
| JPS59103216A (en) | Electric contact | |
| JP2000208438A (en) | SiC SEMICONDUCTOR DEVICE | |
| JPH02191380A (en) | Superconductive unit and manufacture thereof | |
| US4100385A (en) | Electrical terminal, particularly plug-type terminal | |
| US4337133A (en) | Hard gold surfaces | |
| JPH04370612A (en) | Electric contact | |
| JPH0629634A (en) | Flexible circuit board | |
| JPH04370611A (en) | Electric contact | |
| JPH0262035A (en) | Semiconductor device | |
| JP4362586B2 (en) | High heat-resistant conductive thin film manufacturing method, high heat-resistant conductive thin film obtained by the manufacturing method, laminated film, and device including the laminated film | |
| JP6162817B2 (en) | Silver coating material and method for producing the same | |
| JP4588621B2 (en) | Laminated body for flexible printed wiring board and Cu alloy sputtering target used for forming copper alloy layer of the laminated body | |
| JP7441370B1 (en) | ceramic susceptor | |
| JPS61109215A (en) | Electric contact material | |
| JP3032020B2 (en) | Manufacturing method of electrical contacts | |
| JPS61109212A (en) | Electric contact material | |
| JPH04282515A (en) | Electric contact | |
| CN113258380B (en) | Connector and connector pair | |
| JPH07220788A (en) | Ic socket use terminal and manufacture thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20000919 |