JPH04366754A - Resist image defect inspection device - Google Patents

Resist image defect inspection device

Info

Publication number
JPH04366754A
JPH04366754A JP3168720A JP16872091A JPH04366754A JP H04366754 A JPH04366754 A JP H04366754A JP 3168720 A JP3168720 A JP 3168720A JP 16872091 A JP16872091 A JP 16872091A JP H04366754 A JPH04366754 A JP H04366754A
Authority
JP
Japan
Prior art keywords
infrared
light source
image
shutter
inspection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3168720A
Other languages
Japanese (ja)
Inventor
Atsushi Komatsu
小松 敦史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP3168720A priority Critical patent/JPH04366754A/en
Publication of JPH04366754A publication Critical patent/JPH04366754A/en
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electron Beam Exposure (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

PURPOSE:To enable resist pattern defects which are transparent to any white light source to be inspected by infrared absorption by using infrared radiation as a light source for inspection, and receiving light transmitted through a subjected for inspection at an infrared image sensor. CONSTITUTION:A half mirror 8 and a mirror 13 are both provided in such a manner as being capable of going into and out of an optical path. The mirrors 8, 13 are retreated from an infrared optical axis and a shutter 12a is opened and a shutter 12b closed. Then light from an infrared light source 9 is transmitted through a wafer 10 from its reverse side and taken as a first image into an infrared image sensor 11. Next a stage 5 is moved and another resist pattern on the wafer 10 is similarly taken as a second image into the sensor 11. The first and second images are subjected to comparison processing and inspection by an image processor 6 and a computer 7. To observe pattern defects, the mirrors 8, 13 are placed on the optical axis and the shutter 12a is closed and the shutter 12b opened and thereby the infrared light source 9 is cut off and visual observation using a white light source 1 is made possible.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、レジスト・イメージ欠
陥検査装置に関し、特にパターンマッチング方式のレジ
スト・イメージ欠陥検査装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist image defect inspection apparatus, and more particularly to a pattern matching type resist image defect inspection apparatus.

【0002】0002

【従来の技術】半導体装置の製造において、露光装置や
レチクルに起因する共通パターン欠陥を防止することは
、高い製造歩留りを維持する上で重要な項目となってい
る。その方法として、レチクルを露光装置に充填後、レ
ジスト単層パターンを平坦なウエハーに焼き付け、これ
をレジスト・イメージ欠陥装置で検査しパターン欠陥が
あるか否かを事前に確認する手法がある。
2. Description of the Related Art In the manufacture of semiconductor devices, preventing common pattern defects caused by exposure equipment and reticles is an important item in maintaining high manufacturing yields. One method for this is to fill an exposure device with a reticle, then print a resist single layer pattern onto a flat wafer, and then inspect it with a resist image defect device to confirm in advance whether there are any pattern defects.

【0003】レジスト・イメージ欠陥検査装置には、2
つの同一パターンを比較検査しパターン欠陥を検出する
パターンマッチング方式や、同一イメージを複数サンプ
リングすることで得られる統計処理イメージと比較を行
う方式などがある。
[0003] There are two types of resist image defect inspection equipment.
There are pattern matching methods that compare and inspect two identical patterns to detect pattern defects, and methods that compare statistically processed images obtained by sampling the same image multiple times.

【0004】従来のパターンマッチング方式のレジスト
・イメージ欠陥検査装置の構成図を図3に示す。白色光
源1からの光をレンズ2を介してステージ5上の石英製
ウエハー3の裏面より照射し、その透過光で形成された
第1のレジスト・イメージを可視光イメージセンサー4
で取り込む。
FIG. 3 shows a configuration diagram of a conventional pattern matching type resist image defect inspection apparatus. Light from a white light source 1 is irradiated from the back side of a quartz wafer 3 on a stage 5 through a lens 2, and a first resist image formed by the transmitted light is sent to a visible light image sensor 4.
Import it with.

【0005】次にパターンマッチングするべき第2のレ
ジスト・イメージをステージ5で移動させ同様にして取
り込む。これら2つのイメージをイメージプロセッサ6
及びコンピュータ7で比較処理をし比較検査を行う。
Next, a second resist image to be pattern matched is moved on stage 5 and captured in the same manner. These two images are processed by image processor 6.
Then, the computer 7 performs comparison processing and performs a comparative inspection.

【0006】実際のパターン欠陥の観察はハーフミラー
8を介して行う。
[0006] Actual pattern defects are observed through a half mirror 8.

【0007】シリコンウエハーを用いて反射イメージに
より検査を行う装置もある。しかし欠陥検出感度で劣る
傾向があり、透過イメージで検査を行う手法が現在主流
である。
There is also an apparatus that uses a silicon wafer to perform inspection using a reflected image. However, it tends to be inferior in defect detection sensitivity, and the current mainstream method is to perform inspection using transmitted images.

【0008】[0008]

【発明が解決しようとする課題】従来のパターンマッチ
ング方式のレジスト・イメージ欠陥検査装置は、光源に
白色光源を用いるため、レジスト・パターン欠陥が透明
状であった場合に検出が困難であるという欠点があった
[Problems to be Solved by the Invention] Conventional pattern matching type resist image defect inspection equipment uses a white light source as a light source, so it has the disadvantage that it is difficult to detect transparent resist pattern defects. was there.

【0009】本発明の目的は、透明上のレジスト・パタ
ーン欠陥を容易に検出可能としたレジスト・イメージ欠
陥検査装置を提供することにある。
An object of the present invention is to provide a resist image defect inspection device that can easily detect resist pattern defects on transparent surfaces.

【0010】0010

【課題を解決するための手段】前記目的を達成するため
、本発明に係るレジスト・イメージ欠陥検査装置におい
ては、パターンマッチング方式のレジスト・イメージ欠
陥検査装置であって、検査光源として赤外光線を用い、
さらに、赤外光線が照射された被検査物からの透過イメ
ージを取込む赤外イメージセンサーを有するものである
[Means for Solving the Problems] In order to achieve the above object, a resist image defect inspection apparatus according to the present invention is a pattern matching type resist image defect inspection apparatus, and uses infrared light as an inspection light source. use,
Furthermore, it has an infrared image sensor that captures a transmitted image from the object to be inspected that has been irradiated with infrared light.

【0011】[0011]

【作用】本発明では、検査光源に赤外光線を用いて検査
を行うことにより、白色光源に対し透明であったレジス
ト・パターン欠陥を赤外吸収により検査を可能としたも
のである。
[Operation] In the present invention, by using infrared light as the inspection light source, resist pattern defects that are transparent to a white light source can be inspected by infrared absorption.

【0012】0012

【実施例】次に本発明について図面を参照して説明する
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained with reference to the drawings.

【0013】図1,図2は本発明の一実施例を示す図で
ある。本実施例では、検査光源として赤外光源9を用い
、赤外光源9から出射される赤外光の光軸上に、シャッ
ター12a、レンズ2a、ウエハー10を光軸上に支持
するステージ5、赤外イメージを取り込む赤外イメージ
センサー11を配設する。6はイメージプロセッサ、7
はコンピュータである。
FIGS. 1 and 2 are diagrams showing an embodiment of the present invention. In this embodiment, an infrared light source 9 is used as the inspection light source, and a stage 5 that supports a shutter 12a, a lens 2a, and a wafer 10 on the optical axis of the infrared light emitted from the infrared light source 9; An infrared image sensor 11 that captures an infrared image is provided. 6 is an image processor, 7
is a computer.

【0014】また、赤外光の光軸に対して直角方向に白
色光源1を配設し、白色光源1から出射される白色光の
光軸と赤外光の光軸とが交わる位置にハーフミラー8を
着脱可能に位置し、ハーフミラー8と白色光源1との間
にシャッター12bとレンズ2bとを設置する。
Further, the white light source 1 is disposed perpendicularly to the optical axis of the infrared light, and a half-light source 1 is provided at a position where the optical axis of the white light emitted from the white light source 1 and the optical axis of the infrared light intersect. A mirror 8 is removably located, and a shutter 12b and a lens 2b are installed between the half mirror 8 and the white light source 1.

【0015】また、ハーフミラー8より後方に、ミラー
13を赤外光の光軸に対して出没可能に設置し、ミラー
13の反射側にレンズ2bを設置する。
Further, a mirror 13 is installed behind the half mirror 8 so as to be retractable from the optical axis of the infrared light, and a lens 2b is installed on the reflection side of the mirror 13.

【0016】図2は、本発明の実施例におけるレジスト
・イメージ欠陥検査時を示すものである。この場合、ハ
ーフミラー8及びミラー13は、赤外光の光軸上から後
退させ、かつシャッター12aを開き、シャッター12
bを閉じておく。この状態で赤外光源9からの光は、ウ
エハー10を裏面より照射し、ウエハー10からの透過
イメージが赤外イメージセンサー11に第1のイメージ
として取り込まれる。実際のイメージは、赤外光線の透
過製に起因したコントラストの差から形成される。つま
り、レジスト・パターンが存在する部分や透明状の欠陥
があった場合は赤外光線が吸収され、何も存在しない部
分のみ吸収されない。
FIG. 2 shows resist image defect inspection in an embodiment of the present invention. In this case, the half mirror 8 and the mirror 13 are moved back from the optical axis of the infrared light, and the shutter 12a is opened.
Close b. In this state, light from the infrared light source 9 illuminates the wafer 10 from the back surface, and a transmitted image from the wafer 10 is captured by the infrared image sensor 11 as a first image. The actual image is formed from contrast differences due to the transmission of infrared light. In other words, infrared rays are absorbed in areas where there is a resist pattern or transparent defects, and are not absorbed only in areas where there is no resist pattern.

【0017】次に、ステージ5を移動させてウエハー1
0上の別のレジスト・パターンを赤外光の光軸上に移送
し、このパターンからの透過イメージを第2のイメージ
として同様に取り込む。第1のイメージと第2のイメー
ジをイメージプロセッサ6及びコンピュータ7により比
較処理し比較検査を行う。
Next, the stage 5 is moved and the wafer 1
Another resist pattern on 0 is transferred onto the optical axis of the infrared light, and the transmission image from this pattern is similarly captured as a second image. The first image and the second image are compared and processed by the image processor 6 and the computer 7 to perform a comparison test.

【0018】図2は本発明の実施例におけるパターン欠
陥観察時を示す図である。赤外光源9は、シャッター1
2aによりカットされる。赤外光の光軸に自動でセット
されたハーフミラー8を介して白色光源1からの白色光
がウエハー10上に照射され、その反射光を光軸に自動
設定されたミラー13を介して目視が可能となる。
FIG. 2 is a diagram showing pattern defect observation in an embodiment of the present invention. The infrared light source 9 is the shutter 1
It is cut by 2a. White light from a white light source 1 is irradiated onto the wafer 10 via a half mirror 8 that is automatically set on the optical axis of the infrared light, and the reflected light is visually observed via a mirror 13 that is automatically set on the optical axis. becomes possible.

【0019】[0019]

【発明の効果】以上のように本発明は、検査光源に赤外
光線を使用することにより、白色光源に対し透明であっ
たレジスト・パターン欠陥でも赤外吸収により検出が可
能となる効果がある。
[Effects of the Invention] As described above, the present invention has the effect that by using infrared light as an inspection light source, even resist pattern defects that are transparent to a white light source can be detected by infrared absorption. .

【0020】また、赤外光線に透過性を持つシリコンウ
エハーが使用でき、価格が高価な石英製のウエハーを使
用せず透過検査が可能となる。
Furthermore, a silicon wafer that is transparent to infrared light can be used, and transmission inspection can be performed without using an expensive quartz wafer.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明の実施例における検査時の構成図である
FIG. 1 is a configuration diagram at the time of inspection in an embodiment of the present invention.

【図2】本発明の実施例における欠陥観察時の構成図で
ある。
FIG. 2 is a configuration diagram during defect observation in an embodiment of the present invention.

【図3】従来のレジスト・パターン欠陥検査装置の構成
図である。
FIG. 3 is a configuration diagram of a conventional resist pattern defect inspection apparatus.

【符号の説明】[Explanation of symbols]

1  白色光源 2a,2b  レンズ 5  ステージ 6  イメージプロセッサ 7  コンピュータ 8  ハーフミラー 9  赤外光源 10  シリコンウエハー 11  赤外イメージセンサー 12a,12b  シャッター 13  ミラー 1 White light source 2a, 2b Lens 5 Stage 6 Image processor 7 Computer 8 Half mirror 9 Infrared light source 10 Silicon wafer 11 Infrared image sensor 12a, 12b Shutter 13 Mirror

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】  パターンマッチング方式のレジスト・
イメージ欠陥検査装置であって、検査光源として赤外光
線を用い、さらに、赤外光線が照射された被検査物から
の透過イメージを取込む赤外イメージセンサーを有する
ことを特徴とするレジスト・イメージ欠陥検査装置。
[Claim 1] Pattern matching type resist.
An image defect inspection device that uses infrared light as an inspection light source and further includes an infrared image sensor that captures a transmitted image from an object to be inspected irradiated with the infrared light. Defect inspection equipment.
JP3168720A 1991-06-13 1991-06-13 Resist image defect inspection device Pending JPH04366754A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3168720A JPH04366754A (en) 1991-06-13 1991-06-13 Resist image defect inspection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3168720A JPH04366754A (en) 1991-06-13 1991-06-13 Resist image defect inspection device

Publications (1)

Publication Number Publication Date
JPH04366754A true JPH04366754A (en) 1992-12-18

Family

ID=15873195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3168720A Pending JPH04366754A (en) 1991-06-13 1991-06-13 Resist image defect inspection device

Country Status (1)

Country Link
JP (1) JPH04366754A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006184177A (en) * 2004-12-28 2006-07-13 Mitsubishi Electric Corp Infrared inspection device and method
CN104422701A (en) * 2013-09-09 2015-03-18 政美应用股份有限公司 Linear scanning assembly

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006184177A (en) * 2004-12-28 2006-07-13 Mitsubishi Electric Corp Infrared inspection device and method
CN104422701A (en) * 2013-09-09 2015-03-18 政美应用股份有限公司 Linear scanning assembly

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