JPH0436472B2 - - Google Patents
Info
- Publication number
- JPH0436472B2 JPH0436472B2 JP57000085A JP8582A JPH0436472B2 JP H0436472 B2 JPH0436472 B2 JP H0436472B2 JP 57000085 A JP57000085 A JP 57000085A JP 8582 A JP8582 A JP 8582A JP H0436472 B2 JPH0436472 B2 JP H0436472B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- scintillator
- detection element
- light
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 15
- 230000005855 radiation Effects 0.000 claims description 14
- 238000001514 detection method Methods 0.000 claims description 9
- 230000035945 sensitivity Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 2
- 230000001502 supplementing effect Effects 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 3
- 229910014299 N-Si Inorganic materials 0.000 description 2
- 238000002591 computed tomography Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004347 surface barrier Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
Description
【発明の詳細な説明】 （発明の属する技術分野） この発明は放射線検出器に関する。[Detailed description of the invention] (Technical field to which the invention pertains) This invention relates to radiation detectors.
（従来技術およびその問題点・要求）
本発明に関係の深い従来技術例を第１図に示
す。図中、１はAl電極、２はｎ−Si、３はAu電
極、４はNaI（Tl）、５はＷコリメータ、６は電流
増幅器をそれぞれ示している。この多チヤンネル
放射線検出器はＸ線CT（コンピユータ・トモグラ
フイ）装置へ適用されるもので、半導体検出器で
直接的にＸ線を検出するだけでなく、半導体検出
器を通り抜けたＸ線をさらに利用してシンチレー
タ（NaI（Tl））を発光せしめ、この光をふたたび
半導体検出器で受光して感度の増加をはかつてい
る。したがつて半導体検出器はＸ線検出およびシ
ヨツトキー型光検出という二つの役割を有してい
る。(Prior art and its problems/requirements) An example of a prior art that is closely related to the present invention is shown in FIG. In the figure, 1 is an Al electrode, 2 is an n-Si electrode, 3 is an Au electrode, 4 is NaI (Tl), 5 is a W collimator, and 6 is a current amplifier. This multi-channel radiation detector is applied to X-ray CT (computer tomography) equipment, and in addition to directly detecting X-rays with a semiconductor detector, it further utilizes the X-rays that have passed through the semiconductor detector. This causes the scintillator (NaI (Tl)) to emit light, which is then received by the semiconductor detector again to increase sensitivity. The semiconductor detector therefore has two roles: X-ray detection and Schottky photodetection.
この半導体検出器の問題点は次の点である。即
ち、光に対する有感部分である空乏層は電極材料
の仕事関数の関係からAu電極側にのみ形成され
ており、Al電極側へ入射する光に対してはほと
んど感度がなく、光の利用効率が低い点である。 The problems with this semiconductor detector are as follows. In other words, the depletion layer, which is a part sensitive to light, is formed only on the Au electrode side due to the work function of the electrode material, and has almost no sensitivity to light incident on the Al electrode side, which reduces the light utilization efficiency. is a low point.
（発明の目的）
この発明の目的は、シンチレータと組合せて使
用した場合に非常に高い感度を有する半導体放射
線検出器を提供することにある。(Object of the Invention) An object of the invention is to provide a semiconductor radiation detector that has very high sensitivity when used in combination with a scintillator.
（発明の概要）
本発明は結晶性半導体素材を基体とし表裏２つ
の主面に電極を形成した放射線検出素子と、該放
射線検出素子の受光感度を有しない側の電極の表
面に形成したアモルフアス半導体層を構成要素と
する光検知素子と、シンチレータとを備え、前記
光検知素子により前記放射線検出素子の前記シン
チレータからの光を検知する機能を補うようにし
たことを特徴とする半導体放射線検出器である。(Summary of the Invention) The present invention provides a radiation detection element having a crystalline semiconductor material as a base and electrodes formed on two main surfaces, the front and the back, and an amorphous semiconductor formed on the surface of the electrode on the side of the radiation detection element that does not have light-receiving sensitivity. A semiconductor radiation detector comprising a photodetecting element having a layer as a component and a scintillator, the photodetecting element supplementing the function of the radiation detecting element to detect light from the scintillator. be.
（発明の実施例）
本発明の一実施例を第２図に示す。図中、７は
Au電極、８はia−Si：Ｈ（ノンドープアモルフア
スシリコン層）、９はn+a−Si：Ｈ（ｎ型アモルフ
アスシリコン層）、１０はAl電極、１１はｎ−Si
（ｎ型結晶性シリコン）、１２はAu電極、１３は
Ｗコリメータ、１４は電流増幅器、１５はNal
（Tl）（シンチレータの一種）をそれぞれ示す。
このような構造において、Ｘ線をＮ−Si１１で検
出しかつAu電極１２の下に形成される空乏層に
よりシンチレータからの光を受光する点は従来例
と同様である。しかしながら、Al電極１０上に
堆積されているアモルフアスシリコン層はシヨツ
トキー型アモルフアス光検出素子として動作し、
シンチレータの光をさらに検出することができ
る。製造方法に関しては、種々考えられるが、一
例として以下に示すプロセスが可能である。(Embodiment of the Invention) An embodiment of the present invention is shown in FIG. In the figure, 7 is
Au electrode, 8 is ia-Si:H (non-doped amorphous silicon layer), 9 is n + a-Si:H (n-type amorphous silicon layer), 10 is Al electrode, 11 is n-Si
(n-type crystalline silicon), 12 is Au electrode, 13 is W collimator, 14 is current amplifier, 15 is Nal
(Tl) (a type of scintillator).
This structure is similar to the conventional example in that X-rays are detected by the N-Si 11 and light from the scintillator is received by the depletion layer formed under the Au electrode 12. However, the amorphous silicon layer deposited on the Al electrode 10 operates as a Schottky-type amorphous photodetector,
The scintillator light can further be detected. As for the manufacturing method, various methods can be considered, and as an example, the following process is possible.
(1) １１のｎ−Si上に１０のAl電極を抵抗加熱
法で真空蒸着する。(1) Vacuum-deposit 10 Al electrodes on 11 N-Si layers using a resistance heating method.
(2) その上に９のn+a−Si：Ｈおよび８のia−
Si：Ｈをグロー放電法により堆積する。(2) On top of that, 9 n + a−Si:H and 8 ia−
Si:H is deposited by glow discharge method.
(3) その上に７のAu電極を抵抗加熱法で真空蒸
着する。(3) On top of that, the Au electrode No. 7 is vacuum-deposited using a resistance heating method.
(4) 最後に１１のｎ−Si上に１２のAu電極を抵
抗加熱法で真空蒸着する。(4) Finally, 12 Au electrodes are vacuum-deposited on 11 n-Si layers using a resistance heating method.
（発明の効果）
以上に説明したように本発明の半導体放射線検
出器は、シンチレータと組み合せて使用する場合
に、従来の半導体放射線検出器をしのぐ感度特性
を有する。(Effects of the Invention) As described above, the semiconductor radiation detector of the present invention has sensitivity characteristics that exceed those of conventional semiconductor radiation detectors when used in combination with a scintillator.
（発明の変形例）
第２図の実施例においてアモルフアス光検知素
子構造としてシヨツトキー型を使用しているが、
PIN型やPN型も応用することが可能である。ま
た、結晶性半導体放射線検出素子に関しても第２
図の実施例では表面障壁型であるが、この他にも
PN型、PIN型など任意の構造のものを適用でき
る。(Modification of the invention) In the embodiment shown in FIG. 2, a Schottky type is used as the amorphous photodetecting element structure.
PIN type and PN type can also be applied. Also, regarding crystalline semiconductor radiation detection elements, the second
The example shown in the figure is a surface barrier type, but there are other types as well.
Any structure such as PN type or PIN type can be applied.
第１図は従来例を示す図第２図は本発明の一実
施例を示す図である。
７…Au電極、８…ia−Si：Ｈ、９…n+a−Si：
Ｈ、１０…Al電極、１１…ｎ−Si、１２…Au電
極、１３…Ｗコリメータ、１４…電流増幅器、１
５…NaI（Tl）。
FIG. 1 shows a conventional example, and FIG. 2 shows an embodiment of the present invention. 7...Au electrode, 8...ia-Si:H, 9...n + a-Si:
H, 10... Al electrode, 11... n-Si, 12... Au electrode, 13... W collimator, 14... current amplifier, 1
5...NaI (Tl).
Claims (1)
に電極を形成した放射線検出素子と、該放射線検
出素子の受光感度を有しない側の電極の表面に形
成したアモルフアス半導体層を構成要素とする光
検知素子と、シンチレータとを備え、前記光検知
素子により前記放射線検出素子の前記シンチレー
タからの光を検知する機能を補うようにしたこと
を特徴とする半導体放射線検出器。1. A radiation detection element made of a crystalline semiconductor material with electrodes formed on its two principal surfaces, and an amorphous semiconductor layer formed on the surface of the electrode on the side of the radiation detection element that does not have light-receiving sensitivity. 1. A semiconductor radiation detector comprising a detection element and a scintillator, the light detection element supplementing the function of the radiation detection element to detect light from the scintillator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57000085A JPS58118163A (en) | 1982-01-05 | 1982-01-05 | Semiconductor radiation detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57000085A JPS58118163A (en) | 1982-01-05 | 1982-01-05 | Semiconductor radiation detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58118163A JPS58118163A (en) | 1983-07-14 |
| JPH0436472B2 true JPH0436472B2 (en) | 1992-06-16 |
Family
ID=11464295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57000085A Granted JPS58118163A (en) | 1982-01-05 | 1982-01-05 | Semiconductor radiation detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58118163A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61221689A (en) * | 1985-03-28 | 1986-10-02 | Toshiba Corp | Detector for radial rays |
| US4926052A (en) * | 1986-03-03 | 1990-05-15 | Kabushiki Kaisha Toshiba | Radiation detecting device |
-
1982
- 1982-01-05 JP JP57000085A patent/JPS58118163A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58118163A (en) | 1983-07-14 |
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