JPH04360569A - Lead frame material for ceramic package - Google Patents
Lead frame material for ceramic packageInfo
- Publication number
- JPH04360569A JPH04360569A JP16368491A JP16368491A JPH04360569A JP H04360569 A JPH04360569 A JP H04360569A JP 16368491 A JP16368491 A JP 16368491A JP 16368491 A JP16368491 A JP 16368491A JP H04360569 A JPH04360569 A JP H04360569A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- lead frame
- glass
- alloy
- thermal expansion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 48
- 239000000919 ceramic Substances 0.000 title claims abstract description 25
- 239000010949 copper Substances 0.000 claims abstract description 44
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052802 copper Inorganic materials 0.000 claims abstract description 39
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 33
- 239000000956 alloy Substances 0.000 claims abstract description 33
- 239000010409 thin film Substances 0.000 claims abstract description 14
- 238000005253 cladding Methods 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000011521 glass Substances 0.000 abstract description 28
- 238000007789 sealing Methods 0.000 abstract description 19
- 239000002131 composite material Substances 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 4
- 229910001374 Invar Inorganic materials 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 10
- 229910020598 Co Fe Inorganic materials 0.000 description 6
- 229910002519 Co-Fe Inorganic materials 0.000 description 6
- 239000010408 film Substances 0.000 description 4
- 238000005096 rolling process Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 229910017709 Ni Co Inorganic materials 0.000 description 2
- 229910003267 Ni-Co Inorganic materials 0.000 description 2
- 229910003262 Ni‐Co Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000005097 cold rolling Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000005355 lead glass Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】この発明は、セラミックパッケー
ジ用リードフレームに用いる銅と低熱膨張合金からなる
３層以上のクラッド材の改良に係り、銅と低熱膨張合金
からなる３層以上のクラッド材の所要位置の表面に銅材
面が露出しないようにアルミニウム薄膜を設け、ガラス
封着性を向上させた低熱膨張、低電気抵抗、高熱伝導特
性を有するセラミックパッケージ用リードフレーム材料
である。[Field of Industrial Application] This invention relates to the improvement of a cladding material with three or more layers made of copper and a low thermal expansion alloy used in a lead frame for a ceramic package. This lead frame material for ceramic packages has low thermal expansion, low electrical resistance, and high thermal conductivity properties, with an aluminum thin film provided on the surface at required locations so that the copper surface is not exposed, and improved glass sealing properties.
【０００２】0002
【従来の技術】従来、セラミックパッケージ用リードフ
レーム材料には、２９ｗｔ％Ｎｉ−１７ｗｔ％Ｃｏ−Ｆ
ｅ合金や４２ｗｔ％Ｎｉ−Ｆｅ合金などに代表される低
熱膨張材料が使用されており、そのガラス封着に対する
信頼性は非常に優れている。[Prior Art] Conventionally, lead frame materials for ceramic packages include 29wt%Ni-17wt%Co-F.
Low thermal expansion materials such as e-alloy and 42wt% Ni-Fe alloy are used, and their reliability for glass sealing is extremely high.
【０００３】また図４に示す如く、セラミック基板１上
のＩＣチップ２とリードフレーム３のインナーリードと
の間のボンデングワイヤー５にＡｌを用いる場合、Ｆｅ
−Ｎｉ合金のインナーリード先端部のＡｌワイヤーボン
デングされる部分にのみＡｌ薄膜４を蒸着等の手段でコ
ーティングして使用されている。Furthermore, as shown in FIG. 4, when Al is used for the bonding wire 5 between the IC chip 2 on the ceramic substrate 1 and the inner lead of the lead frame 3, Fe
-A thin Al film 4 is coated by means of vapor deposition or the like only on the portion of the tip of the -Ni alloy inner lead to which the Al wire is bonded.
【０００４】しかし、上記Ｆｅ−Ｎｉ合金等の低熱膨張
材料は電気抵抗が大きくまた熱伝導性が悪く、発熱の大
きい素子には不向であること、強磁性のため高周波用で
はリードインダクタンスが大となり不向であること、ま
た信号系への磁化歪の影響が懸念される場合には不向で
あるなどの問題があった。However, low thermal expansion materials such as the Fe-Ni alloy have high electrical resistance and poor thermal conductivity, making them unsuitable for devices that generate large amounts of heat, and because of their ferromagnetism, lead inductance is large for high-frequency applications. There have been problems in that it is not suitable for use in cases where there is a concern about the influence of magnetization distortion on the signal system.
【０００５】上述の用途のパッケージ用リードフレーム
材料には、種々のＣｕ系合金が用いられているが、Ｃｕ
系合金ではガラス封止できないため、プラスチックパッ
ケージにのみ使用されている。[0005] Various Cu-based alloys are used as package lead frame materials for the above-mentioned applications.
Glass-based alloys cannot be sealed, so they are used only in plastic packages.
【０００６】[0006]
【発明が解決しようとする課題】ところで近年、低電気
抵抗並びに高熱伝導率に対する要求の高まりから、銅／
Ｎｉ−Ｆｅ合金／銅、銅／Ｎｉ−Ｃｏ−Ｆｅ合金／銅な
どの複合材料をリードフレーム材とする動きがある。し
かし前述の如く銅に対するガラスの濡れ性が悪いために
、ガラス封着に対する信頼性が得られないという欠点が
ある。[Problem to be solved by the invention] In recent years, due to the increasing demand for low electrical resistance and high thermal conductivity, copper/
There is a movement to use composite materials such as Ni-Fe alloy/copper and copper/Ni-Co-Fe alloy/copper as lead frame materials. However, as mentioned above, since the wettability of glass to copper is poor, reliability in glass sealing cannot be obtained.
【０００７】この発明は、低熱膨張、低電気抵抗、高熱
伝導特性を有する銅と低熱膨張合金からなる３層以上の
クラッド材のガラス封着性を向上させたセラミックパッ
ケージ用リードフレーム材料の提供を目的としている。[0007] The present invention provides a lead frame material for a ceramic package that improves the glass sealing properties of a cladding material of three or more layers made of copper and a low thermal expansion alloy, which have low thermal expansion, low electrical resistance, and high thermal conductivity. The purpose is
【０００８】[0008]
【課題を解決するための手段】この発明は、銅と低熱膨
張合金により構成される少なくとも３層構造のクラッド
材より形成されるセラミックパッケージ用リードフレー
ム材料において、少なくともセラミックパッケージ内に
封入されるリード表面の全面に１〜１０μｍ厚みのアル
ミニウム薄膜を有することを特徴とするセラミックパッ
ケージ用リードフレーム材料である。[Means for Solving the Problems] The present invention provides a lead frame material for a ceramic package formed from a cladding material having at least three layers composed of copper and a low thermal expansion alloy. This is a lead frame material for a ceramic package characterized by having a thin aluminum film with a thickness of 1 to 10 μm on the entire surface.
【０００９】[0009]
【作用】この発明は、リードフレーム材として銅と低熱
膨張材料との３層以上の構造の複合材料の少なくともイ
ンナーリードの全表面、すなわちにガラス封着時にガラ
スと接触する部分及びワイヤーボンディングされる部分
の表面全面に蒸着等の手段でＡｌ薄膜を設けることによ
り、ガラス封着及びワイヤーボンディングされる所要位
置の表面に銅材面が露出しないため、その複合材料のガ
ラス封着に対する信頼性を大幅に改善でき、従来のＡｌ
ワイヤーボンディグ性を確保できる。[Operation] The present invention uses at least the entire surface of the inner lead of a composite material having a structure of three or more layers of copper and a low thermal expansion material as a lead frame material, that is, the portion that comes into contact with the glass during glass sealing and the wire bonding. By providing a thin Al film on the entire surface of the part by means such as vapor deposition, the copper surface is not exposed on the surface at the required position where glass sealing and wire bonding will be performed, greatly increasing the reliability of glass sealing of the composite material. can be improved compared to conventional Al
Wire bonding properties can be ensured.
【００１０】図１に基づいて詳述すると、リードフレー
ム１０の材料として、銅／インバー／銅などの銅１２と
低熱膨張材料１１との３層構造の複合材料を使用する場
合、リードフレーム１０に成型してセラミックパッケー
ジに組み立てた際の少なくともインナーリードの全表面
、すなわちリードフレーム１０の、ＩＣチップ２を載置
したセラミック基板１とセラミックキャップ６間をガラ
ス封着する時にガラス７と接触する部分及びＩＣチップ
２とボンディングワイヤー５にて接続される部分の表面
全面に蒸着等の手段でＡｌ薄膜１３を設けることにより
、ガラス封着及びワイヤーボンディングされる所要位置
の表面に銅１２材面が露出しないため、リードフレーム
１０のガラス封着に対する信頼性を大幅に改善でき、従
来のＡｌワイヤーボンディグ性を確保できる。To explain in detail based on FIG. 1, when a composite material having a three-layer structure of copper 12 such as copper/invar/copper and a low thermal expansion material 11 is used as the material of the lead frame 10, At least the entire surface of the inner lead when molded and assembled into a ceramic package, that is, the portion of the lead frame 10 that comes into contact with the glass 7 when glass sealing is performed between the ceramic cap 6 and the ceramic substrate 1 on which the IC chip 2 is mounted. By providing an Al thin film 13 by vapor deposition or other means on the entire surface of the part connected to the IC chip 2 by the bonding wire 5, the surface of the copper 12 material is exposed on the surface at the required position where glass sealing and wire bonding are to be performed. Therefore, the reliability of glass sealing of the lead frame 10 can be greatly improved, and the conventional Al wire bonding properties can be secured.
【００１１】この発明において、リードフレーム材の所
要表面に設けるＡｌ薄膜の厚みは、１μｍ未満であると
ガラス封止時の加熱によりアルミニウムと銅が合金化し
てしまい、アルミニウムによりガラス封着の信頼性を改
善させる効果がなく、また１０μｍを越える厚みは、ガ
ラス封着の信頼性を改善させる目的としては不必要であ
るため、１〜１０μｍ厚みとする。望ましくは３〜５μ
ｍである。Ａｌ薄膜の被着方法は、蒸着、スパッタリン
グなど公知の成膜方法を適宜選定して１〜１０μｍ厚み
に成膜する。In this invention, if the thickness of the Al thin film provided on the required surface of the lead frame material is less than 1 μm, aluminum and copper will become alloyed due to heating during glass sealing, and the reliability of glass sealing will be reduced due to aluminum. Since there is no effect of improving the glass sealing properties and a thickness exceeding 10 μm is unnecessary for the purpose of improving the reliability of glass sealing, the thickness is set to 1 to 10 μm. Desirably 3-5μ
It is m. The Al thin film is deposited to a thickness of 1 to 10 μm by appropriately selecting a known film forming method such as vapor deposition or sputtering.
【００１２】この発明において、銅と低熱膨張合金との
クラッド材は、表面がＣｕ材からなる例えばＣｕ／Ｆｅ
−Ｎｉ／Ｃｕ構成のほか、Ｆｅ−Ｎｉ／Ｃｕ／Ｆｅ−Ｎ
ｉ構成など３層以上の構造の複合材料を適宜使用できる
。低熱膨張合金には、リードフレーム材として公知のＦ
ｅ−Ｎｉ系、Ｆｅ−Ｎｉ−Ｃｏ系、Ｆｅ−Ｎｉ−Ｃｒ系
の各合金を適宜選定できる。[0012] In this invention, the cladding material of copper and a low thermal expansion alloy is a Cu/Fe cladding material whose surface is made of a Cu material.
-In addition to Ni/Cu configuration, Fe-Ni/Cu/Fe-N
A composite material having a structure of three or more layers, such as an i-structure, can be used as appropriate. Low thermal expansion alloys include F, which is known as lead frame material.
Each alloy of e-Ni type, Fe-Ni-Co type, and Fe-Ni-Cr type can be selected as appropriate.
【００１３】またこの発明において、銅と組合わせられ
る低熱膨張合金との体積比は、例えば、３０〜５５ｗｔ
％Ｎｉ−Ｆｅ系合金、２５〜３５ｗｔ％Ｎｉ−１３〜２
０ｗｔ％Ｃｏ−Ｆｅ系合金の場合、Ｎｉ−Ｆｅ系合金も
しくはＮｉ−Ｃｏ−Ｆｅ系合金の体積比率が３０〜７５
ｖｏｌ％であることが好ましい。すなわち、３０ｖｏｌ
％未満では低熱膨張合金の低熱膨張特性が生かされず、
クラッド材の熱膨張が大きくなりすぎ、また７５ｖｏｌ
％を越えると銅のもつ低電気抵抗、高熱伝導特性が生か
されず、クラッド材の電気抵抗が大きく、また熱伝導は
低下しすぎるため好ましくない。Further, in the present invention, the volume ratio of the low thermal expansion alloy to be combined with copper is, for example, 30 to 55 wt.
%Ni-Fe alloy, 25-35wt%Ni-13-2
In the case of 0 wt% Co-Fe alloy, the volume ratio of Ni-Fe alloy or Ni-Co-Fe alloy is 30 to 75.
Preferably, it is vol%. That is, 30vol
If it is less than %, the low thermal expansion characteristics of the low thermal expansion alloy will not be utilized.
The thermal expansion of the cladding material becomes too large, and the 75vol.
%, the low electrical resistance and high thermal conductivity properties of copper are not utilized, the electrical resistance of the cladding material becomes large, and the thermal conductivity decreases too much, which is not preferable.
【００１４】[0014]
実施例１
板厚０．７５ｍｍ、板幅２００ｍｍのコイル状４１ｗｔ
％Ｎｉ−Ｆｅ合金（ＡＳＴＭ Ｆ−３０Ａｌｌｏｙ相
当材）板を巻戻しながら、板厚０．３７５ｍｍ板幅２０
０ｍｍのコイル状銅（ＪＩＳ Ｃ１０２０相当材）板
を、前記４１ｗｔ％Ｎｉ−Ｆｅ合金板の上方及び下方よ
り巻戻しながら、圧延率６０％で圧接し、その後接合界
面の金属的接合力を高めるために、温度１０００℃、３
分間の熱処理を行い、続いて冷間圧延、焼鈍を繰返し、
仕上げ圧延率２５％で板厚０．１５ｍｍ、板幅２００ｍ
ｍのコイル状の銅／４１ｗｔ％Ｎｉ−Ｆｅ合金／銅クラ
ッド板を得た。得られたクラッド板の各構成材層の厚み
は、銅が各々０．０３７ｍｍ、４１ｗｔ％Ｎｉ−Ｆｅ合
金が０．０７６ｍｍであった。Example 1 Coiled 41wt with plate thickness 0.75mm and plate width 200mm
%Ni-Fe alloy (ASTM F-30Alloy equivalent material) While unwinding the plate, the plate thickness was 0.375 mm and the plate width was 20 mm.
A 0 mm coiled copper (JIS C1020 equivalent material) plate was unwound from above and below the 41 wt% Ni-Fe alloy plate and pressure welded at a rolling rate of 60%, and then in order to increase the metallic bonding strength at the bonding interface. , temperature 1000℃, 3
Heat treatment for 1 minute, followed by repeated cold rolling and annealing.
Finish rolling rate 25%, plate thickness 0.15mm, plate width 200m
A coil-shaped copper/41 wt% Ni-Fe alloy/copper clad plate of m was obtained. The thickness of each constituent material layer of the obtained clad plate was 0.037 mm for copper and 0.076 mm for 41 wt % Ni-Fe alloy.
【００１５】得られたクラッド板より図２に示すように
、０．１５ｍｍ、幅１．０ｍｍ、長さ５０ｍｍのリード
２０を作製し、その片側２５ｍｍの表面全面に厚み５μ
ｍのＡｌ薄膜２１を蒸着した。３層クラッド材のリード
２０の面方向の平均熱膨張係数と体積抵抗率を調べ表１
に示す。As shown in FIG. 2, a lead 20 with a diameter of 0.15 mm, a width of 1.0 mm, and a length of 50 mm was fabricated from the obtained clad plate, and a 5 μm thick lead was formed on the entire surface of 25 mm on one side.
An Al thin film 21 of m thickness was deposited. The average coefficient of thermal expansion and volume resistivity in the plane direction of the lead 20 of the three-layer cladding material were investigated and Table 1
Shown below.
【００１６】このリード２０のＡｌ薄膜２１を図３に示
すようにアルミナセラミックス板２２に低融点鉛ガラス
２３で４５０℃×１５分の加熱条件で接着し、そのガラ
ス封着性をガラス付け剪断強度にて評価した。その結果
を表１に示す。As shown in FIG. 3, the Al thin film 21 of this lead 20 is bonded to an alumina ceramic plate 22 with a low melting point lead glass 23 under heating conditions of 450° C. for 15 minutes, and the glass sealing property is determined by the glass bonding shear strength. It was evaluated. The results are shown in Table 1.
【００１７】比較のため、４１ｗｔ％Ｎｉ−Ｆｅ合金、
２９ｗｔ％Ｎｉ−１７ｗｔ％Ｃｏ−Ｆｅ合金、銅、銅／
４１ｗｔ％Ｎｉ−Ｆｅ合金／銅（板厚比１：２：１）ク
ラッド材についても同様の評価を行い、その結果を表１
に示す。For comparison, 41wt% Ni-Fe alloy,
29wt%Ni-17wt%Co-Fe alloy, copper, copper/
A similar evaluation was conducted for the 41wt% Ni-Fe alloy/copper (thickness ratio 1:2:1) clad material, and the results are shown in Table 1.
Shown below.
【００１８】実施例２
板厚０．７５ｍｍ、板幅２００ｍｍのコイル状銅（ＪＩ
Ｓ Ｃ１０２０相当）板を巻戻しながら、板厚０．３
７５ｍｍ、板幅２００ｍｍのコイル状の２９ｗｔ％Ｎｉ
−１７ｗｔ％Ｃｏ−Ｆｅ合金（ＡＳＴＭ Ｆ−１５Ａ
ｌｌｏｙ相当材）板を前記銅板の上方及び下方より巻戻
しながら、圧延率６０％で圧接し、その後接合界面の金
属的接合力を高めるために、温度１０００℃、３分間の
熱処理を行い、続いて冷間圧延、焼鈍を繰返し、仕上げ
圧延率２５％で板厚０．１５ｍｍ板幅２００ｍｍ寸法か
らなるコイル状の２９ｗｔ％Ｎｉ−１７ｗｔ％Ｃｏ−Ｆ
ｅ合金／銅／２９ｗｔ％Ｎｉ−１７ｗｔ％Ｃｏ−Ｆｅ合
金クラッド板を得た。得られたクラッド板の各構成材層
の厚みは、２９ｗｔ％Ｎｉ−１７ｗｔ％Ｃｏ−Ｆｅ合金
が各々０．０３７ｍｍ、銅が０．０７６ｍｍであった。Example 2 Coiled copper (JI) with a thickness of 0.75 mm and a width of 200 mm
S C1020 equivalent) While unwinding the board, reduce the board thickness to 0.3
29wt%Ni in coil shape with 75mm and plate width 200mm
-17wt%Co-Fe alloy (ASTM F-15A
lloy equivalent material) plates were pressed together at a rolling rate of 60% while unwinding from above and below the copper plate, and then heat treated at a temperature of 1000°C for 3 minutes in order to increase the metallic bonding strength at the bonding interface. A coil-shaped 29wt%Ni-17wt%Co-F with a plate thickness of 0.15mm and a plate width of 200mm was obtained by repeating cold rolling and annealing at a finish rolling rate of 25%.
An e-alloy/copper/29wt%Ni-17wt%Co-Fe alloy clad plate was obtained. The thickness of each constituent material layer of the obtained clad plate was 0.037 mm for the 29 wt % Ni-17 wt % Co--Fe alloy and 0.076 mm for the copper.
【００１９】得られたクラッド板より、実施例１と同様
にリードを作製して厚み５μｍのＡｌ薄膜を蒸着し、同
様に平均熱膨張係数と体積抵抗率を調べ、かつガラス封
着性を評価し、その表１に示す。From the obtained clad plate, leads were prepared in the same manner as in Example 1, and a 5 μm thick Al thin film was deposited, and the average coefficient of thermal expansion and volume resistivity were similarly examined, and the glass sealing property was evaluated. and is shown in Table 1.
【００２０】[0020]
【表１】[Table 1]
【００２０】[0020]
【発明の効果】この発明によるセラミックパッケージ用
リードフレーム材料は、銅と低熱膨張合金からなる３層
以上のクラッド材の所要位置の表面の全面に銅材面が露
出しないようにＡｌ薄膜を設けて、ガラス封着性を向上
させもので、実施例から明らかなように、本発明のリー
ドフレームは、低熱膨張特性を有することは言うまでも
なく、かつ低電気抵抗特性を有し、さらに、従来のＦｅ
−Ｎｉ−Ｃｏ合金と同様に優れたガラス封着性を備えて
いるので、セラミックパッケージ用リードフレーム材料
として最適である。[Effects of the Invention] The lead frame material for a ceramic package according to the present invention has an Al thin film provided on the entire surface of a cladding material of three or more layers made of copper and a low thermal expansion alloy at a predetermined position so that the copper material surface is not exposed. As is clear from the examples, the lead frame of the present invention not only has low thermal expansion characteristics but also low electrical resistance characteristics.
- Since it has excellent glass sealing properties like the Ni-Co alloy, it is optimal as a lead frame material for ceramic packages.
【図１】この発明によるリードフレーム材料を用いたセ
ラミックパッケージを示す説明図であり、Ａは一部破断
斜視説明図、Ｂは縦断説明図、Ｃはリードフレームの詳
細を示す縦断説明図である。FIG. 1 is an explanatory view showing a ceramic package using a lead frame material according to the present invention, where A is a partially broken perspective view, B is a vertical cross-sectional view, and C is a vertical cross-sectional view showing details of the lead frame. .
【図２】この発明によるリードフレーム材料を用いた試
験片の斜視説明図である。FIG. 2 is a perspective explanatory view of a test piece using the lead frame material according to the present invention.
【図３】リードとセラミックス板のガラス封着状態を示
す斜視説明図である。FIG. 3 is a perspective explanatory view showing a glass-sealed state of a lead and a ceramic plate.
【図４】従来のリードフレーム材料を用いたセラミック
パッケージの縦断説明図である。FIG. 4 is a longitudinal cross-sectional view of a ceramic package using a conventional lead frame material.
１ セラミック基板 ２ ＩＣチップ ３，１０ リードフレーム ４ Ａｌ薄膜 ５ ボンディングワイヤー ６ セラミックキャップ ７ ガラス １１ 低熱膨張材料 １２ 銅 １３ Ａｌ薄膜 ２０ リード ２１ Ａｌ薄膜 ２２ アルミナセラミックス板 ２３ 低融点鉛ガラス 1 Ceramic substrate 2 IC chip 3,10 Lead frame 4 Al thin film 5 Bonding wire 6 Ceramic cap 7 Glass 11 Low thermal expansion material 12 Copper 13 Al thin film 20 Lead 21 Al thin film 22 Alumina ceramic plate 23 Low melting point lead glass
Claims (1)
なくとも３層構造のクラッド材より形成されるセラミッ
クパッケージ用リードフレーム材料において、少なくと
もセラミックパッケージ内に封入されるリード表面の全
面に１〜１０μｍ厚みのアルミニウム薄膜を有すること
を特徴とするセラミックパッケージ用リードフレーム材
料。1. A lead frame material for a ceramic package formed from a cladding material with at least three layers of copper and a low thermal expansion alloy, wherein the lead frame material has a thickness of 1 to 10 μm over at least the entire surface of the lead enclosed in the ceramic package. A lead frame material for a ceramic package, characterized by having an aluminum thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16368491A JPH04360569A (en) | 1991-06-06 | 1991-06-06 | Lead frame material for ceramic package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16368491A JPH04360569A (en) | 1991-06-06 | 1991-06-06 | Lead frame material for ceramic package |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04360569A true JPH04360569A (en) | 1992-12-14 |
Family
ID=15778637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16368491A Pending JPH04360569A (en) | 1991-06-06 | 1991-06-06 | Lead frame material for ceramic package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04360569A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19507573A1 (en) * | 1994-03-30 | 1995-10-05 | Gold Star Electronics | Conductor structure for semiconductor housing |
-
1991
- 1991-06-06 JP JP16368491A patent/JPH04360569A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19507573A1 (en) * | 1994-03-30 | 1995-10-05 | Gold Star Electronics | Conductor structure for semiconductor housing |
| DE19507573C2 (en) * | 1994-03-30 | 2002-11-21 | Gold Star Electronics | Conductor structure for a semiconductor package and semiconductor package with such a conductor structure |
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