JPH04359425A - Semiconductor manufacturing device - Google Patents

Abstract

PURPOSE:To enhance the processing accuracy and uniformity of a semiconductor substrate. CONSTITUTION:Electromagnetic coils are laid out on the upper side 9c or lower side 9d of a reaction chamber 1 in addition of its peripheral parts 9a and 9b. In addition to the side peripheral parts, the electromagnetic coils laid out in the upper or the lower side make it possible to control precisely the plasma generated in the reaction chamber by their magnetic fields.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus using plasma generated by a high frequency power source and a magnetic field.

0002

2. Description of the Related Art FIG. 4 is a sectional view showing a conventional semiconductor manufacturing apparatus of this type. In the figure, 1 is a reaction chamber for generating plasma, 2 is an inlet for introducing semiconductor material gas into the reaction chamber, and 3 is a sectional view showing a conventional semiconductor manufacturing apparatus of this type. , 4 are upper and lower electrodes, 5 is a semiconductor substrate to be processed, 6 is an exhaust port for exhausting the gas in the reaction chamber, 7 is a high frequency power source, 8 is a matching box between the lower electrode 4 and the high frequency power source 7, 9a, Reference numeral 9b denotes electromagnetic coils arranged on both the left and right sides of the reaction chamber 1 to improve the efficiency of generating plasma within the reaction chamber.

Next, the operation will be explained. A semiconductor material gas is introduced into the reaction chamber 1 through the inlet 2, and then a high frequency of, for example, 13.56 MHz is controlled by the matching box 8 and applied to the reaction chamber 1 from the power source 7. At the same time, magnetic fields of different polarities are generated in both the electromagnetic coils 9a and 9b, which act on the semiconductor material gas that has already been introduced to generate plasma, and the ions and ions of the semiconductor material gas generated in this plasma. The radicals reach the surface of the semiconductor substrate 5, cause a chemical reaction on the semiconductor substrate, and partially remove, ie, etch, the semiconductor surface in that area. That is, the electromagnetic coils 9a, 9b
By changing the magnetic field, the momentum of electrons in the plasma changes, and when these collide with semiconductor material gas molecules, electron ions and radicals are generated. Since these ions and radicals contribute to chemical reactions on the semiconductor surface, etching can be controlled by controlling changes in the magnetic field.

0004

[Problems to be Solved by the Invention] Conventional semiconductor manufacturing equipment is configured as described above, but with this, it is difficult to control the magnetic field within the reaction chamber 1, and therefore, it is not possible to precisely control the generated plasma. Therefore, there were problems such as poor processing accuracy of the semiconductor substrate.

The present invention has been made to solve the above-mentioned problems, and its object is to improve the uniformity of processing accuracy on a semiconductor substrate.

[0006]

[Means for Solving the Problems] A semiconductor manufacturing apparatus according to the present invention has an electromagnetic coil arranged above or below the reaction chamber, or both, in addition to the electromagnetic coil arranged around the side of the reaction chamber.

[0007]

[Operation] The semiconductor manufacturing apparatus according to the present invention has an electromagnetic coil disposed on the upper side, the lower side, or both.
The plasma generated in the reaction chamber can be precisely controlled by this magnetic field, and the processing accuracy of semiconductor substrates can be improved.

[0008]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. In FIG. 1, numerals 1 to 8 are exactly the same as those of the conventional device described above, so their explanation will be omitted. In this embodiment, in addition to disposing electromagnetic coils around the sides 9a and 9b of the reaction chamber 1,
They are also placed on the upper and lower sides 9c and 9d of the reaction chamber 1.

In the semiconductor manufacturing apparatus configured as described above, the magnetic field inside the reaction chamber 1 can be controlled in various ways by the electromagnetic coils 9a to 9d attached to the side peripheral portion of the reaction chamber 1 and on both upper and lower sides. . In the conventional electromagnetic coils 9a and 9b only at the side periphery, the non-uniformity increases as the diameter of the semiconductor substrate 5 becomes larger, such as 8 inches, but in the above embodiment, the electromagnetic coils 9a to 9b By applying a magnetic field of 9d, the magnetic field at the electromagnetic coil is reduced to 9
The magnetic fields c and 9d supplement and form various magnetic fields within the reaction chamber. Therefore, it is also possible to precisely control the generated plasma.

As described above, plasma can be controlled by changing the magnetic fields of the electromagnetic coils 9a to 9d, so that uniform plasma can be formed over the entire surface of the semiconductor substrate 5, and therefore the semiconductor material generated in the plasma can be Gas ions and radicals act uniformly on the entire surface of the semiconductor substrate,
Highly accurate surface processing can be achieved.

[0011] In the above embodiment, the electromagnetic coils 9c and 9d are provided on both the upper and lower sides of the reaction chamber 1, but depending on the device, the electromagnetic coils 9c and 9d may be provided only on the upper or lower side as shown in Figs. Good too. Further, even if a permanent magnet is used instead of the electromagnetic coil, the same effect as in the above embodiment can be obtained.

0012

[Effects of the Invention] As described above, according to the present invention, the magnetic field in the reaction chamber can be controlled more precisely, so even if the semiconductor substrate has a large diameter such as 8 inches, uniform processing accuracy can be maintained. There is a potential effect.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing an embodiment of the present invention.

FIG. 2 is a sectional view showing another embodiment of the invention.

FIG. 3 is a sectional view showing another embodiment of the invention.

FIG. 4 is a cross-sectional view showing a conventional semiconductor manufacturing apparatus.

[Explanation of symbols]

1 Reaction chamber 2 Gas inlet 3 Upper electrode 4 Lower electrode 5 Semiconductor substrate 6 Exhaust port 7 High frequency power supply 8 Matching boxes 9a to 9d
electromagnetic coil

Claims (1)

[Claims] 1. A semiconductor manufacturing apparatus that processes a semiconductor substrate in a reaction chamber by introducing a semiconductor gas into the reaction chamber, wherein a magnetic field is applied to the side peripheral portion of the reaction chamber, and to the upper side, the lower side, or both. 1. A semiconductor manufacturing device characterized by having magnets that can be individually controlled.