JPH0435827A - Vacuum suction device - Google Patents
Vacuum suction deviceInfo
- Publication number
- JPH0435827A JPH0435827A JP2143364A JP14336490A JPH0435827A JP H0435827 A JPH0435827 A JP H0435827A JP 2143364 A JP2143364 A JP 2143364A JP 14336490 A JP14336490 A JP 14336490A JP H0435827 A JPH0435827 A JP H0435827A
- Authority
- JP
- Japan
- Prior art keywords
- suction
- porous
- ceramics
- suction surface
- cutter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 abstract description 15
- 229910052751 metal Inorganic materials 0.000 abstract description 15
- 239000004065 semiconductor Substances 0.000 abstract description 15
- 238000007747 plating Methods 0.000 abstract description 10
- 230000005611 electricity Effects 0.000 abstract description 7
- 230000003068 static effect Effects 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 2
- 238000007599 discharging Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 10
- 238000001179 sorption measurement Methods 0.000 description 7
- 239000011148 porous material Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 238000010304 firing Methods 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
- B28D5/0094—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being of the vacuum type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23D—PLANING; SLOTTING; SHEARING; BROACHING; SAWING; FILING; SCRAPING; LIKE OPERATIONS FOR WORKING METAL BY REMOVING MATERIAL, NOT OTHERWISE PROVIDED FOR
- B23D59/00—Accessories specially designed for sawing machines or sawing devices
- B23D59/001—Measuring or control devices, e.g. for automatic control of work feed pressure on band saw blade
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Jigs For Machine Tools (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体ウェハやガラス基板などを吸着して固
定するための真空吸着装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a vacuum suction device for suctioning and fixing semiconductor wafers, glass substrates, and the like.
従来より、例えば半導体装置の製造工程において、半導
体ウェハを吸着固定し、研磨や切断を行うための真空吸
着装置か用いられていた。2. Description of the Related Art Conventionally, for example, in the manufacturing process of semiconductor devices, a vacuum suction device has been used to suction and fix a semiconductor wafer and perform polishing or cutting.
このような真空吸着装置としては、吸着面に開口した複
数の貫通孔を有するものがあったか、貫通孔部分のみて
吸着するため、吸着か不均一となり、被吸着物にソリか
生しやすいなとの問題点かあった。そこで、より均一な
吸着を行うために、吸着面を多孔質体で形成した真空吸
着装置か用いられていた。Some of these vacuum suction devices have multiple through-holes that open on the suction surface, or because they only suction the through-holes, the suction is uneven and tends to cause warping on the suction object. There were some problems. Therefore, in order to perform more uniform adsorption, a vacuum adsorption device with an adsorption surface made of a porous material has been used.
例えば、第３図に示すように、基体１３に多孔質板Ｉ２
を固着して吸着面１２ａを形成し、吸引孔１３ａより真
空吸引することによって、上記吸着面１２ａに半導体ウ
ェハＷを吸着するようになっていた。For example, as shown in FIG.
is fixed to form a suction surface 12a, and the semiconductor wafer W is suctioned onto the suction surface 12a by vacuum suction from the suction hole 13a.
また、上記多孔質板１２として、金属焼結体からなるも
のは、パリ、カエリ、サヒか発生しやすく耐摩耗性か小
さいことから寿命か短く、優れた平坦度を維持てきない
、などの欠点かあった。そこで上記多孔質板１２として
、多孔質セラミックスを用いることか行われていた（特
開昭５９−１２４５３６号、６２〜５３７７４号、６３
−１６９２４３号公報なと参照）。In addition, when the porous plate 12 is made of a metal sintered body, it tends to cause cracks, burrs, and sags, and its wear resistance is low, resulting in a short life span and failure to maintain excellent flatness. There was. Therefore, porous ceramics have been used as the porous plate 12 (JP-A-59-124536, 62-53774, 63
(Refer to Publication No. 169243).
ところか、このような多孔質板１２として多孔質セラミ
ックスを用いた真空吸着装置ｌｌは、吸着面１２ａかセ
ラミックスからなり、導電性かないため加工中に半導体
ウェハＷに発生した静電気か逃げずにたまりやすく、こ
の静電気か発散する際に半導体ウェハＷ上の回路を破壊
してしまうという問題点があった。However, in the vacuum suction device ll using porous ceramics as the porous plate 12, the suction surface 12a is made of ceramics and is not conductive, so static electricity generated on the semiconductor wafer W during processing does not escape and accumulates. There is a problem in that when this static electricity is easily dissipated, the circuits on the semiconductor wafer W are destroyed.
また、上記真空吸着装置１１上に半導体ウェハＷを載置
して切断を行う際に、カッターか切断完了して吸着面１
２ａに接触することを検知できず、吸着面！２ａを切り
込んでしまうという不都合があった。Further, when the semiconductor wafer W is placed on the vacuum suction device 11 and cut, the cutter finishes cutting and the suction surface 1
Cannot detect contact with 2a, suction surface! There was the inconvenience of cutting into 2a.
上記に鑑みて本発明は、真空吸着装置の吸着面を、表面
に導電膜を形成した多孔質セラミックスまたは導電性を
有する多孔質セラミックスで構成したものである。In view of the above, in the present invention, the suction surface of a vacuum suction device is made of porous ceramics having a conductive film formed on the surface or porous ceramics having conductivity.
本発明によれば、吸着面か導電性を有することから、半
導体ウェハに発生した静電気を逃がすことかできる。According to the present invention, since the suction surface has conductivity, static electricity generated in the semiconductor wafer can be released.
また、吸着した半導体ウェハを切断する際に、カッター
と吸着面との電気的導通を検知することによって、切断
完了に伴うカッターと吸着面の接触を容易に検出するこ
とかできる。Further, when cutting the attracted semiconductor wafer, by detecting electrical continuity between the cutter and the attraction surface, contact between the cutter and the attraction surface upon completion of cutting can be easily detected.
さらに、吸着面かセラミックスからなっているため、優
れた平坦性、耐摩耗性、耐蝕性を有している。Furthermore, since the suction surface is made of ceramic, it has excellent flatness, wear resistance, and corrosion resistance.
以下本発明実施例を図によって説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図、第２図に示す真空吸着装置１は、基体３に多孔
質板２を固着して吸着面２ａを形成し、吸引孔３ａより
真空吸引することによって、上記吸着面２ａに半導体ウ
ェハＷなどを吸着するようになっている。The vacuum suction apparatus 1 shown in FIGS. 1 and 2 has a porous plate 2 fixed to a base 3 to form a suction surface 2a, and a semiconductor wafer is placed on the suction surface 2a by vacuum suction through suction holes 3a. It is designed to absorb W, etc.
また、上記多孔質板２は、表面に金属メツキなどを施し
て導電膜とした多孔質セラミックス、または体積固有抵
抗が１０３Ω・ｃｍ以下の導電性を存する多孔質セラミ
ックスからなっている。そのため、吸着面２ａは導電性
を有し、第１図に示すように、上記多孔質板２をアース
４に接続しておけば、半導体ウェハＷに発生するり
ことかできる。また、第２図に示−
着装置１上に吸着した半導体ウニ。The porous plate 2 is made of porous ceramics whose surface is plated with metal to form a conductive film, or porous ceramics having electrical conductivity with a volume resistivity of 10 3 Ω·cm or less. Therefore, the suction surface 2a has conductivity, and if the porous plate 2 is connected to the ground 4 as shown in FIG. Also, a semiconductor sea urchin adsorbed onto the mounting device 1 is shown in FIG.
際に、カッター６と多孔質板２との電気的導通を検知器
５て検出するようにしておけば、切断完了して、カッタ
ー６と吸着面２ａか接触したことを容易に検知でき、吸
着面２ａへのカッター６の切込みを防止できる。If the detector 5 detects the electrical continuity between the cutter 6 and the porous plate 2, it will be possible to easily detect when the cutter 6 and the suction surface 2a have come into contact with each other after cutting has been completed. It is possible to prevent the cutter 6 from cutting into the surface 2a.
なお、上記基体３は、金属または緻密質セラミックスか
らなり、この基体３と多孔質板２はガラス、接着剤なと
によって固着しである。The base body 3 is made of metal or dense ceramics, and the base body 3 and the porous plate 2 are fixed together with glass, adhesive, or the like.
次に、上記多孔質板２として、表面に金属メツキを施し
て導電膜とした多孔質セラミックスからなるものについ
て説明する。Next, a description will be given of the porous plate 2 made of porous ceramics whose surface is plated with metal to form a conductive film.
まず、アルミナ、ジルコニア等のセラミック原料に所定
の焼結助剤などを添加し、バインダーや焼成条件を調整
したり、あるいは焼成時に焼失する物質を混入しておく
ことによって、気孔率３０〜４０％、平均細孔径５〜５
００μｍ程度の多孔質セラミックス板を製造する。この
多孔質セラミックス板の全表面に無電解メツキを施して
、Ｎｉ、 Ｃｕなとの金属メツキ層を形成するが、該金
属メツキ層は多孔質セラミックス板のすべての開気孔中
にも形成される。また、上記Ｎｉ 、 Ｃｕなとの金属
メツキ層は体積固有抵抗かｌｏ−５〜１Ｏ−６Ω・ｃｍ
と極めて低く、従ってこの多孔質セラミックス板の表面
は優れた導電性をもつこととなる。First, by adding certain sintering aids to ceramic raw materials such as alumina and zirconia, adjusting the binder and firing conditions, or adding substances that are burned out during firing, the porosity can be reduced to 30-40%. , average pore diameter 5-5
A porous ceramic plate of about 00 μm is manufactured. Electroless plating is applied to the entire surface of this porous ceramic plate to form a metal plating layer of Ni, Cu, etc., but the metal plating layer is also formed in all open pores of the porous ceramic plate. . Moreover, the volume resistivity of the metal plating layer with Ni, Cu, etc. is lo-5 to 1O-6Ω・cm.
Therefore, the surface of this porous ceramic plate has excellent electrical conductivity.
この後、上記多孔質セラミックス板の上面を研摩して、
平坦度の優れた吸着面２ａを形成する。After this, the top surface of the porous ceramic plate is polished,
A suction surface 2a with excellent flatness is formed.
この時、吸着面２ａにはセラミックスか露出するため、
被吸着物をセラミックス部分て支持することから、優れ
た平坦性、耐摩耗性を存する。また、吸着面２ａの開気
孔部分ては金属メツキ層か露出する二とから、この金属
メツキ層によって、吸着面２ａは導電性を有することと
なる。At this time, ceramics are exposed on the suction surface 2a, so
Since the adsorbed object is supported by the ceramic part, it has excellent flatness and wear resistance. Furthermore, since the metal plating layer is exposed in the open pores of the suction surface 2a, the metal plating layer makes the suction surface 2a conductive.
なお、上記金属メツキ層となる金属の種類はＮｌＣｕな
とを用いるか、耐蝕性、密着強度などの点から、Ｎ１か
最も優れていた。また、金属メツキ層の厚みは、０．５
μｍ以上あれば吸着面２ａに導電性を持たせることがで
きる。ただし金属メツキ層の厚みか大きいと、多孔質板
２の細孔径を小さくしてしまうため、厚みは１μｍ程度
のものか最もすぐれていた。As for the type of metal used for the metal plating layer, NlCu was used, or N1 was the most excellent in terms of corrosion resistance and adhesion strength. In addition, the thickness of the metal plating layer is 0.5
If the thickness is .mu.m or more, the adsorption surface 2a can be made conductive. However, if the thickness of the metal plating layer is too large, the pore diameter of the porous plate 2 will be reduced, so a thickness of about 1 μm is best.
また、上記実施例では導電膜として金属メツキを施した
もののみを示したが、この他に、ＣＶＤ法などによりＴ
ｉＣ、ＴｉＮなとの導電性薄膜を形成したものでもよい
。In addition, in the above embodiments, only metal plating was applied as the conductive film, but in addition to this, T
A conductive thin film such as iC or TiN may be formed.
さらに、上記多孔質板２として、導電性多孔質セラミッ
クスを用いたものについて説明する。Furthermore, a case using conductive porous ceramics as the porous plate 2 will be described.
前記したように、半導体ウェハＷの静電気を逃がしたり
、カッター６との間での電気的導通を検知するためには
、多孔質板２として、体積固有抵抗か１０３Ω・ Ｃｍ
以下の材質を用いる必要がある。As mentioned above, in order to release static electricity from the semiconductor wafer W and to detect electrical continuity with the cutter 6, the porous plate 2 has a volume resistivity of 103 Ω·Cm.
The following materials must be used.
このようなセラミックスとしては、たとえばＳｉＣを主
成分とし、焼結助剤としてＢ、Ｃを用いた炭化珪素質セ
ラミックス（体積固有抵抗１０３Ω・ｃｍ）や、ＳｉＣ
を主成分とし、所定の焼結助剤と、Ｔｉなとの導電性付
与剤０．５〜１０重量％を添加してなる導電性炭化珪素
質セラミックス（体積固有抵抗ｌＯ８〜１０２Ω・ｃｍ
） 、あるいは、Ｓｌ ３Ｎ４を主成分とし所定の焼結
助剤と、Ｔｉなとの導電性付与剤１５〜６０重量％ を
添加してなる導電性窒化珪素質セラミックス（体積固有
抵抗１０°〜１０２Ω・ｃｍ ）などを用いる。なお、
上記導電性付与剤としては、Ｔｉなどの４ａ、５ａ、６
ａ族元素の単体、炭化物、窒化物、炭窒化物を用いれば
よく、これらの導電性付与剤を添加することによって、
上記に示したちの以外にもさまざまなセラミックスに導
電性を付与することができる。Such ceramics include, for example, silicon carbide ceramics (volume resistivity 103 Ω・cm) containing SiC as the main component and using B and C as sintering aids, and SiC
Conductive silicon carbide ceramics (volume resistivity lO8 to 102 Ω・cm
), or conductive silicon nitride ceramics (volume resistivity 10° to 102Ω・cm) etc. are used. In addition,
As the conductivity imparting agent, 4a, 5a, 6a such as Ti
Simple substances, carbides, nitrides, and carbonitrides of Group A elements may be used, and by adding these conductivity imparting agents,
Conductivity can be imparted to various ceramics other than those shown above.
これらの導電性セラミックス原料を、前記実施例と同様
の方法で気孔率３０〜４０％、平均細孔径５〜５００μ
ｍ程度となるように焼成し、上面を研摩して平坦性に優
れた吸着面２ａを形成すればよい。These conductive ceramic raw materials were prepared in the same manner as in the above example to have a porosity of 30 to 40% and an average pore diameter of 5 to 500μ.
The suction surface 2a with excellent flatness may be formed by firing the material to a thickness of about m and polishing the upper surface.
このようにすれば、吸着面２ａは優れた耐蝕性、耐摩耗
性を有するとともに、導電性をもつことになる。In this way, the suction surface 2a has excellent corrosion resistance and wear resistance, as well as electrical conductivity.
また、以上の実施例において、多孔質セラミックスの気
孔率か３０％より低いと吸着力か弱（なり逆に気孔率が
４０％より高いと、吸着面の平坦性か悪くなってしまう
ため、真空吸着装置として用いるためには、気孔率３０
〜４０％のものか優れていた。In addition, in the above examples, if the porosity of the porous ceramic is lower than 30%, the adsorption force will be weak (on the other hand, if the porosity is higher than 40%, the flatness of the adsorption surface will be poor, so the vacuum In order to use it as an adsorption device, the porosity is 30.
-40% were excellent.
次に、本発明実施例として、第１表に示すさまざまな多
孔質セラミックスを用いて多孔質板２を形成した。いず
れも多孔質板２の大きさは、直径１５０ｍｍ 、厚さｌ
Ｑｍｍとし、吸着面の中央部と端面間の電気抵抗値を測
定した。Next, as an example of the present invention, a porous plate 2 was formed using various porous ceramics shown in Table 1. In both cases, the size of the porous plate 2 is 150 mm in diameter and l in thickness.
Qmm, and the electrical resistance value between the center part of the suction surface and the end face was measured.
その結果、第１表に示すように本発明実施例のものは、
いずれも電気抵抗値か低く、優れた導電性を有している
ことがわかる。As a result, as shown in Table 1, the examples of the present invention were:
It can be seen that both have low electrical resistance values and excellent conductivity.
このように本発明によれば、真空吸着装置の吸着面を、
表面に導電膜を形成した多孔質セラミックスまたは導電
性を存する多孔質セラミックスで構成したことによって
、吸着面か導電性を有するため、被吸着物の静電気を逃
がすことかでき、また、吸着面上で切断を行う際にカッ
ターと吸着面の接触を容易に検出てきることから、カッ
ターによる吸着面への切り込みを防止できる。さらに、
吸着面がセラミックスからなるため、耐蝕性、耐摩耗性
、平坦性に優れているなど、さまざまな特長をもった真
空吸着装置を提供できる。As described above, according to the present invention, the suction surface of the vacuum suction device is
By using porous ceramics with a conductive film formed on the surface or conductive porous ceramics, the suction surface is conductive, allowing the static electricity of the object to be dissipated. Since contact between the cutter and the suction surface can be easily detected when cutting, it is possible to prevent the cutter from cutting into the suction surface. moreover,
Since the suction surface is made of ceramic, it is possible to provide a vacuum suction device with various features such as excellent corrosion resistance, wear resistance, and flatness.
第１図、第２図はそれぞれ本発明実施例に係る真空吸着
装置を示す断面図である。
第３図は従来の真空吸着装置を示す断面図である。FIG. 1 and FIG. 2 are sectional views each showing a vacuum suction device according to an embodiment of the present invention. FIG. 3 is a sectional view showing a conventional vacuum suction device.
Claims (1)
多孔質セラミックスの表面に導電膜を形成するか、また
は該多孔質セラミックスを導電性セラミックスにより形
成したことを特徴とする真空吸着装置。A vacuum suction device characterized in that the suction surface is made of porous ceramics, and a conductive film is formed on the surface of the porous ceramics, or the porous ceramics are made of conductive ceramics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14336490A JP2979194B2 (en) | 1990-05-31 | 1990-05-31 | Vacuum suction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14336490A JP2979194B2 (en) | 1990-05-31 | 1990-05-31 | Vacuum suction device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0435827A true JPH0435827A (en) | 1992-02-06 |
| JP2979194B2 JP2979194B2 (en) | 1999-11-15 |
Family
ID=15337070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14336490A Expired - Lifetime JP2979194B2 (en) | 1990-05-31 | 1990-05-31 | Vacuum suction device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2979194B2 (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5324012A (en) * | 1991-07-16 | 1994-06-28 | Nikon Corporation | Holding apparatus for holding an article such as a semiconductor wafer |
| JPH07156035A (en) * | 1993-11-17 | 1995-06-20 | Ckd Corp | Adsorbing plate of vacuum chuck and manufacture thereof |
| US6089801A (en) * | 1998-07-01 | 2000-07-18 | Thermwood Corporation | Machine tool with improved workpiece holddown system |
| JP2003086667A (en) * | 2001-09-12 | 2003-03-20 | Takatori Corp | Cassette for thin wafer and suction band |
| WO2003049157A1 (en) * | 2001-12-03 | 2003-06-12 | E. I. Du Pont De Nemours And Company | Transfer member with electric conductivity and its manufacturing method |
| JP2008198709A (en) * | 2007-02-09 | 2008-08-28 | Disco Abrasive Syst Ltd | Cleaning device and holding table |
| US7431770B2 (en) | 2003-04-07 | 2008-10-07 | Seiko Epson Corporation | Table device, film-forming apparatus, optical element, semiconductor element, and electric apparatus |
| JP2009099849A (en) * | 2007-10-18 | 2009-05-07 | Denso Corp | Method of manufacturing wafer |
| JP2011014783A (en) * | 2009-07-03 | 2011-01-20 | Disco Abrasive Syst Ltd | Chuck table for cutting device |
| JP2013206975A (en) * | 2012-03-27 | 2013-10-07 | Mitsubishi Electric Corp | Wafer suction method, wafer suction stage, wafer suction system |
| KR20140055984A (en) * | 2012-10-31 | 2014-05-09 | 가부시기가이샤 디스코 | Machining apparatus |
| WO2017096904A1 (en) * | 2015-12-10 | 2017-06-15 | 成都柔电云科科技有限公司 | Belt metal layer film punching device and method therefor |
| JP2018029152A (en) * | 2016-08-19 | 2018-02-22 | 株式会社ディスコ | Holding table |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4545536B2 (en) * | 2004-09-17 | 2010-09-15 | 太平洋セメント株式会社 | Vacuum suction jig |
| JP6226596B2 (en) * | 2013-07-11 | 2017-11-08 | 東京応化工業株式会社 | Support separator |
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1990
- 1990-05-31 JP JP14336490A patent/JP2979194B2/en not_active Expired - Lifetime
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5324012A (en) * | 1991-07-16 | 1994-06-28 | Nikon Corporation | Holding apparatus for holding an article such as a semiconductor wafer |
| JPH07156035A (en) * | 1993-11-17 | 1995-06-20 | Ckd Corp | Adsorbing plate of vacuum chuck and manufacture thereof |
| US6089801A (en) * | 1998-07-01 | 2000-07-18 | Thermwood Corporation | Machine tool with improved workpiece holddown system |
| JP2003086667A (en) * | 2001-09-12 | 2003-03-20 | Takatori Corp | Cassette for thin wafer and suction band |
| WO2003049157A1 (en) * | 2001-12-03 | 2003-06-12 | E. I. Du Pont De Nemours And Company | Transfer member with electric conductivity and its manufacturing method |
| CN1332419C (en) * | 2001-12-03 | 2007-08-15 | 纳幕尔杜邦公司 | Transfer member with electric conductivity and its manufacturing method |
| US7431770B2 (en) | 2003-04-07 | 2008-10-07 | Seiko Epson Corporation | Table device, film-forming apparatus, optical element, semiconductor element, and electric apparatus |
| JP2008198709A (en) * | 2007-02-09 | 2008-08-28 | Disco Abrasive Syst Ltd | Cleaning device and holding table |
| JP2009099849A (en) * | 2007-10-18 | 2009-05-07 | Denso Corp | Method of manufacturing wafer |
| JP2011014783A (en) * | 2009-07-03 | 2011-01-20 | Disco Abrasive Syst Ltd | Chuck table for cutting device |
| JP2013206975A (en) * | 2012-03-27 | 2013-10-07 | Mitsubishi Electric Corp | Wafer suction method, wafer suction stage, wafer suction system |
| US9312160B2 (en) | 2012-03-27 | 2016-04-12 | Mitsubishi Electric Corporation | Wafer suction method, wafer suction stage, and wafer suction system |
| KR20140055984A (en) * | 2012-10-31 | 2014-05-09 | 가부시기가이샤 디스코 | Machining apparatus |
| WO2017096904A1 (en) * | 2015-12-10 | 2017-06-15 | 成都柔电云科科技有限公司 | Belt metal layer film punching device and method therefor |
| JP2018029152A (en) * | 2016-08-19 | 2018-02-22 | 株式会社ディスコ | Holding table |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2979194B2 (en) | 1999-11-15 |
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