JPH04352409A - Manufacture of solid electrolytic capacitor - Google Patents
Manufacture of solid electrolytic capacitorInfo
- Publication number
- JPH04352409A JPH04352409A JP12754791A JP12754791A JPH04352409A JP H04352409 A JPH04352409 A JP H04352409A JP 12754791 A JP12754791 A JP 12754791A JP 12754791 A JP12754791 A JP 12754791A JP H04352409 A JPH04352409 A JP H04352409A
- Authority
- JP
- Japan
- Prior art keywords
- capacitor
- solid electrolytic
- capacitor element
- impregnated
- electrolytic capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 36
- 239000007787 solid Substances 0.000 title claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000011888 foil Substances 0.000 claims abstract description 13
- 238000004804 winding Methods 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 230000008014 freezing Effects 0.000 claims abstract description 4
- 238000007710 freezing Methods 0.000 claims abstract description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 238000000859 sublimation Methods 0.000 claims description 2
- 230000008022 sublimation Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 3
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000032683 aging Effects 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- QIPOHFUODFGVHI-UHFFFAOYSA-N 2-butylisoquinolin-2-ium Chemical compound C1=CC=CC2=C[N+](CCCC)=CC=C21 QIPOHFUODFGVHI-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical class N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は電解質としてTCNQ(
7,7,8,8−テトラシアノキノジメタン)塩を使用
する有機半導体固体電解コンデンサに関するものである
。[Industrial Application Field] The present invention uses TCNQ (
The present invention relates to an organic semiconductor solid electrolytic capacitor using 7,7,8,8-tetracyanoquinodimethane) salt.
【0002】0002
【従来の技術】従来、固体電解コンデンサにおいて固体
電解質として有機半導体、特にTCNQ塩を用いること
が提案されており、例えば、特開平1−205412号
公報(H01G 9/02)には以下の技術が開示さ
れている。[Prior Art] Conventionally, it has been proposed to use an organic semiconductor, particularly a TCNQ salt, as a solid electrolyte in a solid electrolytic capacitor. Disclosed.
【0003】まず、陽極酸化或は陽極化成により表面に
酸化被膜を設けたアルミニウム、タンタル、ニオブ等の
弁作用を有する金属箔と陰極箔とをセパレータ紙を介し
て巻回し、巻取素子を形成する。[0003] First, a metal foil having a valve action such as aluminum, tantalum, niobium, etc., whose surface has been provided with an oxide film by anodizing or anodizing, and a cathode foil are wound through a separator paper to form a winding element. do.
【0004】次に、TCNQ塩の適量粉末を適度の加圧
下でアルミケースに詰め、これを250〜300℃にて
融解液化し、そこに予熱した巻取素子を素早く挿入する
。そしてアルミケースごと前記素子を冷却液化し、ケー
ス内に巻取素子を固定する。続いて酸化被膜の修復性を
向上させる目的で、前記巻取素子にTCNQ塩を含浸さ
せて形成しているコンデンサ素子を純水中に浸積し、減
圧下において素子内部まで純水を含浸させる。そして8
5〜105℃にて1〜8時間放置し(放置時間は該コン
デンサの素子の外形にほぼ比例)、該コンデンサの水分
を蒸発させて取り除いた後、樹脂にて封口し、電圧処理
(エージング)等の工程を経て完成させている。[0004] Next, an appropriate amount of TCNQ salt powder is packed into an aluminum case under moderate pressure, and this is melted and liquefied at 250 to 300°C, and a preheated winding element is quickly inserted therein. Then, the element is cooled and liquefied together with the aluminum case, and the winding element is fixed inside the case. Subsequently, in order to improve the repairability of the oxide film, the capacitor element formed by impregnating the winding element with TCNQ salt is immersed in pure water, and the pure water is impregnated to the inside of the element under reduced pressure. . and 8
The capacitor was left for 1 to 8 hours at 5 to 105°C (the standing time is approximately proportional to the external shape of the capacitor element), and the moisture in the capacitor was evaporated and removed, then sealed with resin and subjected to voltage treatment (aging). It is completed through the following steps.
【0005】[0005]
【発明が解決しようとする課題】上述のような従来の製
造方法においては、TCNQ塩含浸済みのコンデンサ素
子内部に純水を含浸させた後、100℃前後の温度にお
いて該コンデンサ素子内部の水分を乾燥させているため
、素子内部に含浸されたTCNQ塩はこの乾燥時間の間
、該コンデンサ素子内の残留水分に若干溶解することに
なる(なお、TCNQ塩は室温(30℃以下)において
は、水にほとんど溶解しない)。このため、等価直列抵
抗(ESR)の増大を招くという欠点がある。[Problems to be Solved by the Invention] In the conventional manufacturing method as described above, after impregnating the inside of a capacitor element impregnated with TCNQ salt with pure water, the moisture inside the capacitor element is removed at a temperature of about 100°C. Because the capacitor element is dried, the TCNQ salt impregnated inside the element will slightly dissolve in the residual moisture inside the capacitor element during this drying time (note that at room temperature (below 30°C), the TCNQ salt will dissolve slightly in the residual moisture inside the capacitor element. (almost insoluble in water). Therefore, there is a drawback that the equivalent series resistance (ESR) increases.
【0006】[0006]
【課題を解決するための手段】本発明は上述の課題に鑑
み成されたものであり、陽極箔と陰極箔とをセパレータ
を介して巻回した巻取素子に融解液化した有機半導体を
含浸させる工程と、前記巻取素子に含浸させた該有機半
導体を冷却固化してなるコンデンサ素子の内部に純水を
含浸させる工程と、該コンデンサ素子の水分を凍結し、
且つ該凍結した水分を昇華して取除く工程とからなる固
体電解コンデンサの製造方法である。[Means for Solving the Problems] The present invention has been made in view of the above-mentioned problems, and involves impregnating a winding element in which an anode foil and a cathode foil are wound with a separator interposed therebetween with a melted and liquefied organic semiconductor. a step of impregnating pure water into the inside of a capacitor element formed by cooling and solidifying the organic semiconductor impregnated in the winding element; freezing the moisture in the capacitor element;
The method of manufacturing a solid electrolytic capacitor also includes the step of sublimating and removing the frozen water.
【0007】[0007]
【作用】本発明による固体電解コンデンサの製造方法に
よると、コンデンサ素子を純水中に浸積する工程のため
に、酸化被膜の修復性が向上する。[Function] According to the method of manufacturing a solid electrolytic capacitor according to the present invention, the repairability of the oxide film is improved due to the step of immersing the capacitor element in pure water.
【0008】更に、前記コンデンサ素子に含浸させた水
分を凍結し、且つ昇華させる工程のために、該コンデン
サの残留水分に有機半導体は殆ど溶解せず、等価直列抵
抗の増大が防止される。Furthermore, because of the process of freezing and sublimating the moisture impregnated into the capacitor element, the organic semiconductor hardly dissolves in the residual moisture of the capacitor, thereby preventing an increase in equivalent series resistance.
【0009】[0009]
【実施例】本発明の一実施例を説明する。[Example] An example of the present invention will be described.
【0010】まず、エッチング処理、化成処理済みのア
ルミニウム箔を陽極箔とし、該陽極箔に対抗する陰極箔
との間にセパレータを挟んで円筒状に巻取り、巻取素子
を形成する。そして、TCNQ塩(例えばN−n−ブチ
ルイソキノリニウム・TCNQ2またはN,N−ペンタ
メチレン・ルチジニウム2・TCNQ4とN−フェネチ
ル・ルチジニウム・TCNQ2の等量混合物)の粉末を
ケースに収納し、融点以上の温度(例えば290〜30
0℃)で上述の巻取素子にTCNQ塩を含浸させ、コン
デンサ素子を形成する。更に含浸後、ケースを冷却して
コンデンサ素子に含浸したTCNQ塩を冷却固化してケ
ース内にコンデンサ素子を固定する。First, an etched and chemically-treated aluminum foil is used as an anode foil, and a separator is sandwiched between the anode foil and the opposing cathode foil, and the aluminum foil is wound into a cylindrical shape to form a winding element. Then, a powder of TCNQ salt (for example, a mixture of equal amounts of N-n-butylisoquinolinium TCNQ2 or N,N-pentamethylene rutidinium 2 TCNQ4 and N-phenethyl rutidinium TCNQ2) is stored in a case, Temperatures above the melting point (e.g. 290-30
The above-described wound element is impregnated with TCNQ salt at 0° C.) to form a capacitor element. Furthermore, after the impregnation, the case is cooled and the TCNQ salt impregnated into the capacitor element is cooled and solidified, thereby fixing the capacitor element within the case.
【0011】更に、前記TCNQ塩含浸済みのコンデン
サ素子を純水中に浸積し、減圧化で素子内部まで純水を
含浸させる。そして、該コンデンサ素子の水分を−70
℃で凍結させ、真空ポンプ等で水蒸気圧以下に減圧した
状態で、凍結した水分を昇華により除去する。Furthermore, the TCNQ salt-impregnated capacitor element is immersed in pure water, and the pressure is reduced to impregnate the inside of the element with pure water. Then, the moisture in the capacitor element was reduced to -70
It is frozen at ℃, and the frozen water is removed by sublimation while the pressure is reduced below water vapor pressure using a vacuum pump or the like.
【0012】最後にケースの開口部を樹脂、弾性体等で
封口し、125℃にて1時間程度、コンデンサの定格電
圧を印加(エージング)して、目的とする固体電解コン
デンサを完成する。Finally, the opening of the case is sealed with resin, elastic material, etc., and the rated voltage of the capacitor is applied (aging) at 125° C. for about 1 hour to complete the intended solid electrolytic capacitor.
【0013】表1は本発明によるコンデンサと従来例と
の漏れ電流値及び等価直列抵抗値である。Table 1 shows the leakage current values and equivalent series resistance values of the capacitor according to the present invention and the conventional example.
【0014】[0014]
【表1】[Table 1]
【0015】表1において、(A)〜(D)のコンデン
サの定格電圧は全て25Vである。なお、漏れ電流は2
5V印加10分後の値で、試料各10個の平均値を示し
ている。ESRは100kHzでの等価直列抵抗値で試
料各10個の平均値を示している。In Table 1, the rated voltages of the capacitors (A) to (D) are all 25V. In addition, the leakage current is 2
The values are the values after 10 minutes of application of 5V, and the average values of each 10 samples are shown. ESR is an equivalent series resistance value at 100 kHz, and indicates the average value of each 10 samples.
【0016】[0016]
【発明の効果】本発明は上述の如く、TCNQ塩含浸済
み素子を純水中に浸積するため、酸化被膜の修復性が増
大する。Effects of the Invention As described above, in the present invention, since the TCNQ salt-impregnated element is immersed in pure water, the repairability of the oxide film is increased.
【0017】更に、残留水分を冷却固化して昇華させる
という製造方法であるため、残留水分にTCNQ塩が溶
けることはなく、等価直列抵抗値を著しく改善すること
ができる。Furthermore, since the manufacturing method involves cooling, solidifying, and sublimating the residual moisture, the TCNQ salt does not dissolve in the residual moisture, and the equivalent series resistance value can be significantly improved.
Claims (1)
て巻回した巻取素子に融解液化した有機半導体を含浸さ
せる工程と、前記巻取素子に含浸させた該有機半導体を
冷却固化してなるコンデンサ素子の内部に純水を含浸さ
せる工程と、該コンデンサ素子の水分を凍結し、且つ該
凍結した水分を昇華して取除く工程とからなる固体電解
コンデンサの製造方法。1. A step of impregnating a molten and liquefied organic semiconductor into a winding element in which an anode foil and a cathode foil are wound through a separator, and cooling and solidifying the organic semiconductor impregnated into the winding element. A method for producing a solid electrolytic capacitor comprising the steps of: impregnating the inside of a capacitor element with pure water; freezing moisture in the capacitor element; and removing the frozen moisture by sublimation.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12754791A JPH04352409A (en) | 1991-05-30 | 1991-05-30 | Manufacture of solid electrolytic capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12754791A JPH04352409A (en) | 1991-05-30 | 1991-05-30 | Manufacture of solid electrolytic capacitor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04352409A true JPH04352409A (en) | 1992-12-07 |
Family
ID=14962710
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12754791A Pending JPH04352409A (en) | 1991-05-30 | 1991-05-30 | Manufacture of solid electrolytic capacitor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04352409A (en) |
-
1991
- 1991-05-30 JP JP12754791A patent/JPH04352409A/en active Pending
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