JPH04352104A - Production of color filter - Google Patents
Production of color filterInfo
- Publication number
- JPH04352104A JPH04352104A JP3127969A JP12796991A JPH04352104A JP H04352104 A JPH04352104 A JP H04352104A JP 3127969 A JP3127969 A JP 3127969A JP 12796991 A JP12796991 A JP 12796991A JP H04352104 A JPH04352104 A JP H04352104A
- Authority
- JP
- Japan
- Prior art keywords
- film
- protective film
- color filter
- temperature
- transparent conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 230000001681 protective effect Effects 0.000 claims abstract description 73
- 239000000463 material Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 16
- 239000000126 substance Substances 0.000 claims abstract description 14
- 239000003086 colorant Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 20
- 230000002950 deficient Effects 0.000 abstract 1
- 238000004299 exfoliation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 157
- 230000015572 biosynthetic process Effects 0.000 description 22
- 238000001723 curing Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 230000037303 wrinkles Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 238000003980 solgel method Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000005354 aluminosilicate glass Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000004043 dyeing Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000001054 red pigment Substances 0.000 description 2
- 229920003051 synthetic elastomer Polymers 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229920006243 acrylic copolymer Polymers 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910003471 inorganic composite material Inorganic materials 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- -1 silicon alkoxide Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Optical Filters (AREA)
- Liquid Crystal (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、液晶カラーディスプレ
イ用カラーフィルターのように透明電極を備えたカラー
フィルターの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a color filter provided with transparent electrodes, such as a color filter for liquid crystal color displays.
【0002】0002
【従来の技術】液晶、エレクトロルミネッセンス、プラ
ズマ方式などのフラットディスプレイなどのカラーフィ
ルターは、少なくとも、■着色体層からなる複数の画素
部と■信号電極として駆動される透明電極とが透明基板
上に設けられてなる。このようなカラーフィルターにお
いて、画素部はモザイク状、ストライプ状などの所定の
配列で透明基板上に設けられている。一方、透明電極は
、画素部の上面に直接設けられる場合もあるが、一般に
は、画素部の上面に成膜された保護膜上または画素部を
被覆するようにして成膜された保護膜上に設けられる。[Prior Art] Color filters for flat displays such as liquid crystal, electroluminescence, and plasma type displays include at least (1) a plurality of pixel portions each consisting of a colored layer and (2) a transparent electrode driven as a signal electrode on a transparent substrate. It will be established. In such a color filter, pixel portions are provided on a transparent substrate in a predetermined arrangement such as a mosaic shape or a stripe shape. On the other hand, although the transparent electrode may be provided directly on the top surface of the pixel section, it is generally provided on a protective film formed on the top surface of the pixel section or on a protective film formed to cover the pixel section. established in
【0003】透明電極を備えたカラーフィルターのうち
、例えば、画素部を被覆するようにして成膜された保護
膜上に透明電極が設けられているカラーフィルターの製
造は、以下のようにして行われる。先ず、ガラスなどの
透明基板上に印刷法、電着法、染色法などの方法により
所定の配列で複数の画素部を設け、これらの画素部をS
iO2 、TiO2 、ガラスなどの無機透明物質や、
アクリル系樹脂、エポキシ系樹脂、シリコーン系樹脂、
ポリイミド系樹脂などの有機透明物質からなる保護膜で
被覆する。SiO2 やTiO2 からなる保護膜はス
パッタ法や真空蒸着法で成膜し、有機透明物質からなる
保護膜は、これらの物質またはその溶液をスピンコート
法などにより塗布した後に所定の温度の熱処理により硬
化させることで成膜する。ガラスからなる保護膜は、ゾ
ル−ゲル法でガラスを得る際に用いるゾル溶液をスピン
コート法などにより塗布した後に所定の温度の熱処理に
より硬化(ガラス化)させることで成膜する。次に、I
TO、SnO2 、In2 O3 などの透明電極材料
を用いて、スパッタ法や真空蒸着法などで保護膜上に前
記透明電極材料からなる透明導電膜を成膜する。この後
、前記透明導電膜に所定のマスクを用いてのエッチング
処理を施すなどの方法により、画素部の配列パターンに
対応する形の透明電極を形成することで、カラーフィル
ターが得られる。ここで、保護膜として前記無機透明物
質の膜をスパッタ法や真空蒸着法で成膜した場合には、
前記有機透明物質や前記ゾル溶液のような熱硬化性物質
を用いた場合よりも、作業性や生産性の点で劣る。この
ため、保護膜の材料としては熱硬化性物質が好ましく用
いられる。Among color filters equipped with transparent electrodes, for example, a color filter in which a transparent electrode is provided on a protective film formed to cover a pixel portion is manufactured as follows. be exposed. First, a plurality of pixel portions are provided in a predetermined array on a transparent substrate such as glass by a method such as printing, electrodeposition, or dyeing, and these pixel portions are coated with S.
Inorganic transparent substances such as iO2, TiO2, glass,
Acrylic resin, epoxy resin, silicone resin,
Cover with a protective film made of a transparent organic material such as polyimide resin. Protective films made of SiO2 or TiO2 are formed by sputtering or vacuum evaporation, and protective films made of organic transparent materials are coated with these substances or their solutions by spin coating, etc., and then hardened by heat treatment at a predetermined temperature. A film is formed by A protective film made of glass is formed by applying a sol solution used when obtaining glass by the sol-gel method by spin coating or the like, and then hardening (vitrifying) it by heat treatment at a predetermined temperature. Next, I
Using a transparent electrode material such as TO, SnO2, In2O3, etc., a transparent conductive film made of the transparent electrode material is formed on the protective film by sputtering, vacuum evaporation, or the like. Thereafter, a color filter is obtained by forming a transparent electrode in a shape corresponding to the arrangement pattern of the pixel portion by etching the transparent conductive film using a predetermined mask. Here, when a film of the inorganic transparent material is formed as a protective film by sputtering method or vacuum evaporation method,
In terms of workability and productivity, this method is inferior to the case where a thermosetting material such as the organic transparent material or the sol solution is used. Therefore, a thermosetting substance is preferably used as the material for the protective film.
【0004】0004
【発明が解決しようとする課題】しかしながら、保護膜
の材料として熱硬化性物質を用いた従来のカラーフィル
ターにおいては、透明導電膜を所定の形に成形して得ら
れる透明電極にカケ、ハガレ、密着不良などが生じて透
明電極の電気的特性やカラーフィルターの光学的特性が
不十分になり易いという問題点があった。したがって本
発明の目的は、保護膜の材料として熱硬化性物質を用い
たカラーフィルターを、透明電極のカケ、ハガレ、密着
不良などを防止しつつ製造することができる、カラーフ
ィルターの製造方法を提供することにある。[Problems to be Solved by the Invention] However, in conventional color filters that use a thermosetting substance as a material for the protective film, the transparent electrode obtained by molding the transparent conductive film into a predetermined shape has problems such as chipping, peeling, etc. There is a problem in that the electrical properties of the transparent electrode and the optical properties of the color filter tend to be insufficient due to poor adhesion. Therefore, an object of the present invention is to provide a method for manufacturing a color filter, which can manufacture a color filter using a thermosetting substance as a protective film material while preventing chipping, peeling, poor adhesion, etc. of transparent electrodes. It's about doing.
【0005】[0005]
【課題を解決するための手段】本発明者は、従来の製造
方法により得られたカラフィルターにおける透明電極の
カケ、ハガレ、密着不良などの発生原因を鋭意研究した
結果、その原因が、透明導電膜成膜時に保護膜からガス
が発生したり、透明導電膜成膜時に保護膜の硬化反応が
進行して保護膜の体積収縮または体積膨張が起こること
により、保護膜と導電膜との臨界面にシワ、ウネリ、空
隙などが生じることにあることを見出だし、その防止手
段を究明した結果、本発明を完成するに至った。すなわ
ち、上記目的を達成する本発明は、異なった色の着色体
層からなる複数の画素部を設けた透明基板上に熱硬化性
物質の硬化膜からなる保護膜を成膜する工程と、前記保
護膜上に透明導電膜を成膜する工程とを含む方法により
カラーフィルターを製造するにあたり、前記保護膜の成
膜温度T1 と前記透明導電膜の成膜温度T2 とを、
下記関係式
T1 ≧T2
を満足するように選定したことを特徴とするものである
。[Means for Solving the Problems] As a result of intensive research into the causes of cracking, peeling, poor adhesion, etc. of transparent electrodes in color filters obtained by conventional manufacturing methods, the inventors have determined that the causes are transparent conductive A critical interface between the protective film and the conductive film may occur due to the generation of gas from the protective film during film formation or the progression of the curing reaction of the protective film during film formation, resulting in volumetric contraction or expansion of the protective film. As a result of discovering that wrinkles, undulations, voids, etc. are caused by the formation of wrinkles, undulations, voids, etc., and researching means to prevent these, the present invention was completed. That is, the present invention that achieves the above object includes a step of forming a protective film made of a cured film of a thermosetting substance on a transparent substrate provided with a plurality of pixel portions made of colored layers of different colors; When manufacturing a color filter by a method including a step of forming a transparent conductive film on a protective film, the film forming temperature T1 of the protective film and the film forming temperature T2 of the transparent conductive film are set as follows.
It is characterized by being selected so as to satisfy the following relational expression T1≧T2.
【0006】本発明でいう保護膜の成膜温度T1 とは
、保護膜材料である熱硬化性物質を硬化させて硬化膜と
するための処理温度を意味する。例えば、保護膜材料と
して熱硬化性樹脂を用いた場合には、この熱硬化性樹脂
を硬化させるための熱処理温度を意味する。また、保護
膜材料として光硬化性樹脂を用い、この光硬化性樹脂を
光硬化させた後で膜硬度を更に高めるために熱処理を施
した場合には、膜硬度を更に高めるために施した熱処理
の温度を意味する。[0006] The film forming temperature T1 of the protective film as used in the present invention means the processing temperature for curing the thermosetting substance that is the material of the protective film to form a cured film. For example, when a thermosetting resin is used as the protective film material, it means the heat treatment temperature for curing the thermosetting resin. In addition, if a photocurable resin is used as the protective film material and heat treatment is performed to further increase the film hardness after photocuring the photocurable resin, the heat treatment applied to further increase the film hardness temperature.
【0007】一方、本発明でいう透明導電膜の成膜温度
T2 とは、所望の光学的特性(光透過率)および電気
的特性を有する透明導電膜(パターン化することにより
透明電極となる膜)を保護膜上に成膜するための処理の
中で最も高い温度を意味する。例えば、透明導電膜とし
て真空蒸着法によりITO膜を成膜する場合は、下記a
またはbのいずれかの温度を意味する。
a 熱酸化処理を行うこと無く所望の光学的特性およ
び電気的特性を有するITO膜を得る場合は、成膜時の
基板温度。
b 成膜後に熱酸化処理を行うことにより所望の光学
的特性および電気的特性を有するITO膜を得る場合は
、成膜時の基板温度と熱酸化処理時の温度とでいずれか
高い方の温度。On the other hand, the film forming temperature T2 of a transparent conductive film in the present invention refers to a transparent conductive film (a film that becomes a transparent electrode by patterning) having desired optical properties (light transmittance) and electrical properties. ) means the highest temperature in the process for forming a film on the protective film. For example, when forming an ITO film as a transparent conductive film by vacuum evaporation method, the following a.
or b. a When obtaining an ITO film with desired optical and electrical properties without thermal oxidation treatment, the substrate temperature during film formation. b When obtaining an ITO film with desired optical and electrical properties by performing thermal oxidation treatment after film formation, the temperature of the substrate at the time of film formation or the temperature at the time of thermal oxidation treatment, whichever is higher. .
【0008】[0008]
【作用】保護膜の成膜温度T1 を透明導電膜の成膜温
度T2 以上の温度にすることにより、透明導電膜の成
膜時における保護膜からのガス発生や、透明導電膜の成
膜時に保護膜の硬化が進むことが抑止される。すなわち
、保護膜と導電膜との臨界面におけるシワ、ウネリ、空
隙などの発生が抑止される。したがって本発明の方法に
よれば、保護膜上に透明電極を形成することに伴って生
じていた透明電極の電気的特性や光学的特性の低下を防
止することができる。[Function] By setting the protective film forming temperature T1 to a temperature higher than the transparent conductive film forming temperature T2, gas generation from the protective film during forming the transparent conductive film and Further curing of the protective film is inhibited. That is, the occurrence of wrinkles, undulations, voids, etc. at the critical interface between the protective film and the conductive film is suppressed. Therefore, according to the method of the present invention, it is possible to prevent the deterioration of the electrical properties and optical properties of the transparent electrode that would otherwise occur due to the formation of the transparent electrode on the protective film.
【0009】[0009]
【実施例】以下、本発明を実施例に基づき図面を用いて
更に詳細に説明するが、本発明の方法はこれら実施例の
方法に限定されるものではない。
実施例1
アルミノシリケートガラス製透明基板の一表面に遮光層
として所定パターンのクロム(Cr)薄膜を設け、Cr
薄膜を設けた側の透明基板表面にフタロシアニングリー
ン(商品名:SAX、山陽色素社製)を分散させたアク
リル系ネガレジストを塗布して着色体層としたのち、こ
の着色体層をフォトリソグラフィー法により所定パター
ンのモザイク状に成形して分散型の画素部(緑色)を形
成した。この後、フタロシアニンブルー(商品名:SR
1500、山陽色素社製)を分散させたアクリル系ネガ
レジスト及びアゾ系赤顔料(商品名:赤顔料FBカーミ
ン、住友化学社製)を分散させたアクリル系ネガレジス
トを用いて、緑色の画素部の形成と同様にして青色の画
素部及び赤色の画素部を所定パターンのモザイク状に順
次形成して、図1に示すように、一表面上に遮光膜(C
r薄膜)1、赤色の画素部2R、緑色の画素部2G及び
青色の画素部2Bがモザイク状に設けられたアルミノシ
リケートガラス製透明基板3を得た。次に、上で得られ
た透明基板3上の画素部2R、2G、2Bを200℃(
=T3 )で熱処理したのちに、遮光膜1と画素部2R
、2G、2Bとを設けた側の透明基板3表面に、アクリ
ル系樹脂を主成分とするオーバーコート剤(商品名:オ
プトマーSS−7215、日本合成ゴム社製)をスピン
コート法により約2.5μmの厚さ(透明基板3表面か
らの厚さ。以下の実施例でも同じ)で塗布した。このオ
ーバーコート剤を室温で十分に乾燥させたのち、コンベ
ンショナルオーブンにて200℃(=T1 )、1時間
の熱処理を行ってオーバーコート剤を硬化させて、図2
に示すように、遮光膜1と画素部2R、2G、2Bとを
設けた側の透明基板3表面に保護膜4を成膜した。EXAMPLES The present invention will be explained in more detail below based on examples and with reference to the drawings, but the method of the present invention is not limited to the methods of these examples. Example 1 A chromium (Cr) thin film with a predetermined pattern was provided as a light shielding layer on one surface of a transparent substrate made of aluminosilicate glass.
An acrylic negative resist in which phthalocyanine green (trade name: SAX, manufactured by Sanyo Shiki Co., Ltd.) is dispersed is applied to the surface of the transparent substrate on the side where the thin film is provided to form a colored layer, and then this colored layer is formed using a photolithography method. A dispersed pixel portion (green color) was formed by forming a predetermined pattern into a mosaic shape. After this, phthalocyanine blue (product name: SR
1500, manufactured by Sanyo Shiki Co., Ltd.) and an acrylic negative resist in which an azo red pigment (trade name: Red Pigment FB Carmine, manufactured by Sumitomo Chemical Co., Ltd.) was dispersed, the green pixel area was A blue pixel portion and a red pixel portion are sequentially formed in a predetermined mosaic pattern in the same manner as in the formation of
(thin film) 1, an aluminosilicate glass transparent substrate 3 on which a red pixel portion 2R, a green pixel portion 2G, and a blue pixel portion 2B were provided in a mosaic pattern was obtained. Next, the pixel parts 2R, 2G, 2B on the transparent substrate 3 obtained above were heated to 200°C (
= T3 ), then the light shielding film 1 and the pixel part 2R are
, 2G, and 2B are provided on the surface of the transparent substrate 3 by spin coating for about 2.5 hours with an overcoat agent (trade name: Optomer SS-7215, manufactured by Japan Synthetic Rubber Co., Ltd.) containing acrylic resin as the main component. The coating was applied to a thickness of 5 μm (thickness from the surface of the transparent substrate 3; the same applies to the following examples). After sufficiently drying this overcoat agent at room temperature, heat treatment was performed at 200°C (=T1) for 1 hour in a conventional oven to harden the overcoat agent.
As shown in the figure, a protective film 4 was formed on the surface of the transparent substrate 3 on the side where the light shielding film 1 and the pixel parts 2R, 2G, and 2B were provided.
【0010】次に、真空蒸着法にて、基板温度180℃
(=T2 )でITO膜を成膜して、図3に示すように
、保護膜4上に厚さ1400オングストロームの透明導
電膜(ITO膜)5aを設けた。この透明導電膜5aの
表面を触針型表面粗さ計でトレースして山の状態をみた
ところ、シワやウネリは認められなかった。また光学顕
微鏡により観察したところ、クラック、カケ、脱落など
は認められず、良好な膜であることがわかった。この観
察結果より、保護膜4と透明導電膜5aとの臨界面には
、シワ、ウネリ、密着不良が生じていないことがわかる
。
次に、透明導電膜5a上にフォトレジスト(商品名:A
Z1350、ヘキスト社製)を10000オングストロ
ームの厚さで塗布し、90℃で30分間ベークして、図
4に示すように、透明導電膜5a上にフォトレジスト層
6aを設けた。フォトレジスト層6aを所定のマスクを
用いて露光し、現像を行って、図5に示すように、透明
導電膜5a上にレジストパターン6bを設けた。この後
、レジストパターン6bを120℃で30分間ポストベ
ークしたのち、40ボーメ度の塩化第2鉄と塩酸の1:
1混液(液温50℃)に浸漬して透明導電膜5aをエッ
チングし、図6に示すように、所定のパターンの透明電
極5bを形成した。次いで、レジストパターン6bを有
機溶剤(メチルセルロソルブアセテート)にて剥離して
、保護膜4上に透明電極5bが設けられているカラーフ
ィルター7を得た。Next, by vacuum evaporation method, the substrate temperature was 180°C.
(=T2), and as shown in FIG. 3, a transparent conductive film (ITO film) 5a having a thickness of 1400 angstroms was provided on the protective film 4. When the surface of this transparent conductive film 5a was traced with a stylus-type surface roughness meter to check the state of the ridges, no wrinkles or undulations were observed. Further, when observed under an optical microscope, no cracks, chips, or falling off were observed, indicating that the film was in good condition. From this observation result, it can be seen that there are no wrinkles, undulations, or poor adhesion at the critical surface between the protective film 4 and the transparent conductive film 5a. Next, a photoresist (product name: A
A photoresist layer 6a was formed on the transparent conductive film 5a as shown in FIG. The photoresist layer 6a was exposed using a predetermined mask and developed to form a resist pattern 6b on the transparent conductive film 5a, as shown in FIG. After that, the resist pattern 6b was post-baked at 120° C. for 30 minutes, and then a mixture of 40 Baume degree ferric chloride and hydrochloric acid was prepared.
The transparent conductive film 5a was etched by immersing it in a mixed solution of 1 (solution temperature: 50° C.) to form a transparent electrode 5b in a predetermined pattern as shown in FIG. Next, the resist pattern 6b was peeled off using an organic solvent (methylcellulosolve acetate) to obtain a color filter 7 in which the transparent electrode 5b was provided on the protective film 4.
【0011】このようにして得られたカラーフィルター
7における透明電極5bの幅は、レジストパターン6b
の形成時に用いた所定マスクの線幅100μmに対して
99μmであり、カケ、ギザ、クラックなどによる断線
やウネリは全く認められなかった。また透明電極5bの
シート抵抗は23Ω/□であった。カラーフィルター7
における保護膜4の成膜温度(=T1 )、透明導電膜
5aの成膜温度(=T2 )、透明導電膜5a成膜後の
保護膜4の透過率、透明導電膜5aの透過率、透明導電
膜5aにおけるウネリの有無、透明導電膜5aの表面粗
さ、透明電極5bのシート抵抗及び透明電極5bにおけ
るカケやハガレや密着不良の有無(以下これらをカラフ
ィルターの諸特性と総称する)を表1に示す。The width of the transparent electrode 5b in the color filter 7 thus obtained is the same as that of the resist pattern 6b.
The line width was 99 μm compared to 100 μm of the predetermined mask used in forming the mask, and no disconnections or undulations due to chips, burrs, cracks, etc. were observed. Further, the sheet resistance of the transparent electrode 5b was 23Ω/□. color filter 7
The film forming temperature of the protective film 4 (=T1), the film forming temperature of the transparent conductive film 5a (=T2), the transmittance of the protective film 4 after forming the transparent conductive film 5a, the transmittance of the transparent conductive film 5a, The presence or absence of undulations in the conductive film 5a, the surface roughness of the transparent conductive film 5a, the sheet resistance of the transparent electrode 5b, and the presence or absence of chipping, peeling, or poor adhesion in the transparent electrode 5b (hereinafter these are collectively referred to as various characteristics of the color filter). It is shown in Table 1.
【0012】実施例2〜9及び比較例1〜6保護膜の成
膜温度及び透明導電膜の成膜温度を表1に示す温度とし
た以外は実施例1と同様にして、カラーフィルターをそ
れぞれ得た。各カラーフィルターの諸特性を表1に示す
。Examples 2 to 9 and Comparative Examples 1 to 6 Color filters were formed in the same manner as in Example 1, except that the film formation temperature of the protective film and the film formation temperature of the transparent conductive film were set to the temperatures shown in Table 1. Obtained. Table 1 shows the characteristics of each color filter.
【0013】実施例10
保護膜の材料として有機無機複合オーバーコート剤(商
品名:JHR−3040、日本合成ゴム社製。ゾル−ゲ
ル法によりガラスを得る際のゾル溶液に相当する)を用
い、このオーバーコート剤を3.8μmの厚さにスピン
コートして、保護膜の成膜温度T1 を220℃、透明
導電膜(ITO膜)の成膜温度T2 (基板温度)を2
00℃にした以外は実施例1と同様にして、保護膜上に
透明電極が設けられているカラーフィルターを得た。得
られたカラーフィルターの諸特性を表1に示す。Example 10 An organic-inorganic composite overcoat agent (trade name: JHR-3040, manufactured by Japan Synthetic Rubber Co., Ltd., which corresponds to a sol solution when glass is obtained by the sol-gel method) was used as the material for the protective film. This overcoat agent was spin-coated to a thickness of 3.8 μm, and the film-forming temperature T1 of the protective film was 220°C, and the film-forming temperature T2 (substrate temperature) of the transparent conductive film (ITO film) was 220°C.
A color filter having a transparent electrode provided on the protective film was obtained in the same manner as in Example 1 except that the temperature was 00°C. Table 1 shows various properties of the obtained color filter.
【0014】実施例11
保護膜の材料として光硬化性のアクリル系共重合物(商
品名:RFG−7、積水ファインケミカル社製)を用い
、この共重合物を1.5μmの厚さに塗布して紫外線に
より硬化させたのちに220℃(=T1 )で30分間
の熱処理により更に硬化させて保護膜を成膜し、かつ透
明導電膜(ITO膜)の成膜温度T2 (基板温度)を
190℃にした以外は実施例1と同様にして、保護膜上
に透明電極が設けられているカラーフィルターを得た。
得られた各カラーフィルターの諸特性を表1に示す。Example 11 A photocurable acrylic copolymer (trade name: RFG-7, manufactured by Sekisui Fine Chemical Co., Ltd.) was used as the material for the protective film, and this copolymer was applied to a thickness of 1.5 μm. After curing with ultraviolet rays, a protective film was formed by further curing by heat treatment at 220°C (=T1) for 30 minutes, and the film formation temperature T2 (substrate temperature) of the transparent conductive film (ITO film) was set to 190°C. A color filter having a transparent electrode provided on the protective film was obtained in the same manner as in Example 1 except that the temperature was changed to .degree. Table 1 shows the characteristics of each color filter obtained.
【0015】実施例12
保護膜の材料としてポリイミド系樹脂(商品名:PSI
−871ZSA、チッソ社製)を用い、保護膜の成膜条
件を250℃(=T1 )×30分、透明導電膜(IT
O膜)の成膜温度T2 (基板温度)を240℃にした
以外は実施例1と同様にして、保護膜上に透明電極が設
けられているカラーフィルターを得た。得られたカラー
フィルターの諸特性を表1に示す。Example 12 Polyimide resin (trade name: PSI) was used as the material for the protective film.
A transparent conductive film (IT
A color filter having a transparent electrode provided on the protective film was obtained in the same manner as in Example 1 except that the film formation temperature T2 (substrate temperature) of the O film) was 240°C. Table 1 shows various properties of the obtained color filter.
【0016】[0016]
【表1】[Table 1]
【0017】表1及び表2から明らかなように、本発明
の方法に基づく実施例1〜12においては、透明導電膜
にウネリが無く、透明導電膜の表面粗さが小さく、かつ
透明電極にカケやハガレや密着不良の無いカラフィルタ
ーが得られている。これに対して、透明導電膜の成膜温
度(=T2 )を保護膜の成膜温度(=T1 )よりも
高くした比較例1〜6では、全てのカラフィルターにお
いて透明導電膜にウネリが認められ、透明導電膜の表面
粗さが大きく、かつ透明電極にカケやハガレ等が認めら
れた。As is clear from Tables 1 and 2, in Examples 1 to 12 based on the method of the present invention, the transparent conductive film had no undulations, the surface roughness of the transparent conductive film was small, and the transparent electrode had no undulations. Color filters without chipping, peeling, or poor adhesion have been obtained. On the other hand, in Comparative Examples 1 to 6 in which the film formation temperature (=T2) of the transparent conductive film was higher than the film formation temperature (=T1) of the protective film, swelling was observed in the transparent conductive film in all color filters. The surface roughness of the transparent conductive film was large, and chips and peeling were observed on the transparent electrode.
【0018】なお、本発明の方法は上述した実施例の方
法に限定されるものではなく、種々の変形例及び応用例
を含むものである。例えば、保護膜の材料としては、保
護膜として使用可能な光透過性を硬化時に有する熱硬化
性物質であれば、ポリイミド系樹脂、ポリアミド系樹脂
、アクリル系樹脂、エポキシ系樹脂などの有機高分子材
料や、シリコンのアルコキシド(ゾル−ゲル法でガラス
を得る際に用いるゾル溶液)のような有機無機複合材料
など、種々の熱硬化性物質を用いることができる。また
、透明電極の材料(透明導電膜の材料)は、実施例で用
いたITOの他に、SnO2 やIn2 O3 などや
、それらにTe、Se、As、Sbなどの導電性を高め
る効果のある物質を混入させたものなどを用いてもよい
。いずれの実施例においても画素部を熱処理した後に保
護膜を設けているが、画素部の材質や形成方法によって
は、この熱処理を施さずに保護膜を設けてもよい。画素
部中に溶媒や揮発性成分が残存していると、保護膜の成
膜時や透明導電膜の成膜時にこれらが揮発することがあ
る。
この場合には、画素部からの溶媒や揮発性成分の揮発が
保護膜により妨害されるため、これにより画素部にシワ
やウネリが発生したり、保護膜および透明導電膜にシワ
がウネリが発生する。したがって、画素部に熱処理を施
すか否かは、画素部の材質や形成方法に応じて適宜選択
される。この熱処理を施す場合、熱処理温度(=T3
)は保護膜の成膜温度T1 ±30℃で行うことが好ま
しい。画素部の形成方法及びその形成パターンは特に限
定されるものではなく、印刷法、電着法、染色法などの
常法により、モザイク状やストライプ状等の公知のパタ
ーンに形成することができる。The method of the present invention is not limited to the method of the above-described embodiment, but includes various modifications and applications. For example, as a material for the protective film, if it is a thermosetting material that has a light transmittance when cured that can be used as a protective film, organic polymers such as polyimide resin, polyamide resin, acrylic resin, epoxy resin, etc. Various thermosetting substances can be used, such as organic-inorganic composite materials such as silicon alkoxide (a sol solution used to obtain glass by the sol-gel method). In addition to the ITO used in the examples, the material for the transparent electrode (material for the transparent conductive film) is SnO2, In2O3, and other materials that have the effect of increasing conductivity, such as Te, Se, As, and Sb. A material mixed with a substance may also be used. In both embodiments, the protective film is provided after the pixel portion is heat-treated, but depending on the material and formation method of the pixel portion, the protective film may be provided without this heat treatment. If a solvent or volatile component remains in the pixel portion, these may evaporate during the formation of a protective film or a transparent conductive film. In this case, the protective film prevents the volatilization of solvents and volatile components from the pixel area, which may cause wrinkles and undulations in the pixel area, and wrinkles and undulations in the protective film and transparent conductive film. do. Therefore, whether or not to perform heat treatment on the pixel portion is appropriately selected depending on the material and forming method of the pixel portion. When performing this heat treatment, the heat treatment temperature (=T3
) is preferably carried out at a protective film formation temperature T1 of ±30°C. The method of forming the pixel portion and the pattern thereof are not particularly limited, and the pixel portion can be formed into a known pattern such as a mosaic shape or a stripe shape by a conventional method such as a printing method, an electrodeposition method, or a dyeing method.
【0019】画素部の熱処理や保護膜材料を硬化させる
ための熱処理は、いずれも膜を引き締め、堅固にするこ
とを目的としている。フォトレジストに顔料を分散させ
た分散型の画素部や、溶媒に熱硬化性物質を溶解させて
なる保護膜材料では、前記レジストの塗布後あるいは保
護膜材料の塗布後に、通常、溶媒を気化させるための加
熱処理(例えば、フォトレジストの場合には、メーカー
指定の120℃前後)を行うが、上述した熱処理は、こ
の溶媒を気化させるための熱処理と同時に行っても良い
し、気化させるための熱処理後に別工程として行っても
良い。但し、特に保護膜の厚みが2μmを超えるような
厚膜の場合、急激に加熱すると、溶媒が膜内部に残留し
たり、硬化が不十分となって密着不良を起こす恐れがあ
る。この場合には、通常の低い温度でのプレ・ベークを
行った後に、本発明の熱処理温度にて膜を硬化させるこ
とが好ましい。そして、この熱処理温度に達するまでの
昇温速度を緩やかにした方が効果が上る。The heat treatment for the pixel portion and the heat treatment for curing the protective film material are both aimed at tightening and making the film firm. In the case of a dispersed pixel section in which pigment is dispersed in a photoresist or a protective film material in which a thermosetting substance is dissolved in a solvent, the solvent is usually vaporized after the resist is applied or the protective film material is applied. (For example, in the case of photoresist, heat treatment is performed at around 120°C specified by the manufacturer. It may be performed as a separate process after the heat treatment. However, especially in the case of a thick protective film exceeding 2 μm in thickness, rapid heating may cause the solvent to remain inside the film or cause insufficient curing, resulting in poor adhesion. In this case, it is preferable to perform pre-baking at a normal low temperature and then cure the film at the heat treatment temperature of the present invention. The effect will be better if the rate of temperature increase until reaching this heat treatment temperature is slow.
【0020】本発明の方法においては、前述したように
保護膜の成膜温度T1 および透明導電膜の成膜温度T
2 を規定し、場合によっては画素部の熱処理温度T3
を規定する。ここで、保護膜の成膜温度T1 の上限
値は特に限定しないが、画素部の耐熱限界又は保護膜の
材質の耐熱限界が前記T1 の上限になることはいうま
でもない。
また、透明導電膜の成膜温度T2 も特に限定しないが
、透明電極として実用上十分な光学的特性、電気的特性
及び密着性が得られる温度であれば良い。例えばITO
膜の場合は約100℃以上、さらに望ましくは150℃
以上である。なお、実施例ではITO膜成膜時の基板温
度がT2 に相当するが、ITO膜成膜後に熱酸化処理
を施すことにより光学的特性や電気的特性を向上させる
場合や、透明導電膜としてネサ膜を使用する場合などに
おいては、成膜後の熱酸化処理と成膜時の基板温度とで
高い方の温度が、本発明でいう透明導電膜の成膜温度T
2 に相当する。また、保護膜の成膜温度T1 を透明
導電膜の成膜温度T2 よりも高くすればする程、本発
明の効果は大きくなる。In the method of the present invention, as described above, the film forming temperature T1 of the protective film and the film forming temperature T1 of the transparent conductive film are
2 and, in some cases, the heat treatment temperature T3 of the pixel part.
stipulates. Here, the upper limit of the film forming temperature T1 of the protective film is not particularly limited, but it goes without saying that the upper limit of T1 is the heat resistance limit of the pixel portion or the heat resistance limit of the material of the protective film. The film-forming temperature T2 of the transparent conductive film is also not particularly limited, but may be any temperature that provides practically sufficient optical properties, electrical properties, and adhesion as a transparent electrode. For example, ITO
In the case of membranes, the temperature is about 100°C or higher, more preferably 150°C.
That's all. Note that in the examples, the substrate temperature during ITO film formation corresponds to T2, but in some cases, thermal oxidation treatment is performed after ITO film formation to improve optical properties and electrical properties, and when NESA is used as a transparent conductive film. When using a film, the higher temperature of the thermal oxidation treatment after film formation and the substrate temperature during film formation is the film formation temperature T of the transparent conductive film in the present invention.
Equivalent to 2. Moreover, the higher the film-forming temperature T1 of the protective film is than the film-forming temperature T2 of the transparent conductive film, the greater the effect of the present invention becomes.
【0021】[0021]
【発明の効果】以上説明したように、本発明によれば、
透明電極のカケ、ハガレ、密着不良などを防止しつつ、
保護膜の材料として熱硬化性物質を用いたカラーフィル
ターを製造することができる方法が提供された。[Effects of the Invention] As explained above, according to the present invention,
While preventing chipping, peeling, and poor adhesion of transparent electrodes,
A method for manufacturing a color filter using a thermosetting substance as a material for the protective film has been provided.
【図1】異なった色の着色体層からなる複数の画素部と
遮光層とが設けられた透明基板の一例を示す断面図であ
る。FIG. 1 is a cross-sectional view showing an example of a transparent substrate provided with a plurality of pixel portions made of colored body layers of different colors and a light-shielding layer.
【図2】図1に示した透明基板上に成膜した保護膜の一
例を示す断面図である。FIG. 2 is a cross-sectional view showing an example of a protective film formed on the transparent substrate shown in FIG. 1;
【図3】図2に示した保護膜上に成膜した透明導電膜の
一例を示す断面図である。3 is a cross-sectional view showing an example of a transparent conductive film formed on the protective film shown in FIG. 2. FIG.
【図4】図3に示した透明導電膜を透明電極にパターン
化するために設けたフォトレジスト層の一例を示す断面
図である。FIG. 4 is a cross-sectional view showing an example of a photoresist layer provided for patterning the transparent conductive film shown in FIG. 3 into a transparent electrode.
【図5】図4に示した透明導電膜を透明電極にパターン
化するために設けたレジストパターンの一例を示す断面
図である。FIG. 5 is a cross-sectional view showing an example of a resist pattern provided for patterning the transparent conductive film shown in FIG. 4 into a transparent electrode.
【図6】図5に示したレジストパターンを用いて透明導
電膜をパターン化して得た透明電極の一例を示す断面図
である。6 is a cross-sectional view showing an example of a transparent electrode obtained by patterning a transparent conductive film using the resist pattern shown in FIG. 5. FIG.
【図7】本発明に基づいて製造したカラーフィルターの
一例を示す断面図である。FIG. 7 is a sectional view showing an example of a color filter manufactured based on the present invention.
2R、2G、2B 画素部 3 透明基板 4 保護膜 5a 透明導電膜 5b 透明電極 7 カラーフィルター 2R, 2G, 2B pixel section 3 Transparent substrate 4 Protective film 5a Transparent conductive film 5b Transparent electrode 7 Color filter
Claims (2)
画素部を設けた透明基板上に熱硬化性物質の硬化膜から
なる保護膜を成膜する工程と、前記保護膜上に透明導電
膜を成膜する工程とを含むカラフィルターの製造方法に
おいて、前記保護膜の成膜温度T1 と前記透明導電膜
の成膜温度T2 とを、下記関係式 T1 ≧T2 を満足するように選定したことを特徴とするカラーフィ
ルターの製造方法。1. A step of forming a protective film made of a cured film of a thermosetting material on a transparent substrate provided with a plurality of pixel portions made of colored body layers of different colors, and forming a transparent conductive film on the protective film. In the method for manufacturing a color filter including the step of forming a film, the film forming temperature T1 of the protective film and the film forming temperature T2 of the transparent conductive film are selected so as to satisfy the following relational expression T1 ≧T2. A method for manufacturing a color filter, characterized by:
製造方法において、着色体層からなる複数の画素部を設
けた透明基板上に熱硬化性物質の硬化膜からなる保護膜
を成膜するのに先立って、前記複数の画素部を、透明導
電膜の成膜温度T2 に対して下記関係式T3 ≧T2
を満足する温度T3 で熱処理することを特徴とするカ
ラフィルターの製造方法。2. The method for producing a color filter according to claim 1, which comprises forming a protective film made of a cured film of a thermosetting substance on a transparent substrate provided with a plurality of pixel portions made of a colored layer. Prior to this, the plurality of pixel portions are formed according to the following relational expression T3 ≧T2 with respect to the film forming temperature T2 of the transparent conductive film.
A method for producing a color filter, characterized in that heat treatment is performed at a temperature T3 that satisfies the following.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12796991A JP3027622B2 (en) | 1991-05-30 | 1991-05-30 | Manufacturing method of color filter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12796991A JP3027622B2 (en) | 1991-05-30 | 1991-05-30 | Manufacturing method of color filter |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04352104A true JPH04352104A (en) | 1992-12-07 |
JP3027622B2 JP3027622B2 (en) | 2000-04-04 |
Family
ID=14973168
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12796991A Expired - Fee Related JP3027622B2 (en) | 1991-05-30 | 1991-05-30 | Manufacturing method of color filter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3027622B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007011231A (en) * | 2005-07-04 | 2007-01-18 | Fujifilm Holdings Corp | Pattern forming method, substrate with color filter, and display element |
-
1991
- 1991-05-30 JP JP12796991A patent/JP3027622B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007011231A (en) * | 2005-07-04 | 2007-01-18 | Fujifilm Holdings Corp | Pattern forming method, substrate with color filter, and display element |
Also Published As
Publication number | Publication date |
---|---|
JP3027622B2 (en) | 2000-04-04 |
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