JPH043449A - Manufacture of hollow semiconductor device - Google Patents

Abstract

PURPOSE:To prevent occurrences of a blow hole failure and the run of resin by making the surface of resin set rapidly through the process of blowing hot air from the outside of a semiconductor layer. CONSTITUTION:After performing junction that is just made between upper and lower covers 2a and 2b to which resin 3 is applied and an IC lead frame 1 on which a semiconductor element is mounted, hot air 4 is made to blow from the outside of a hollow semiconductor device to a part of junction resin in the semiconductor device. Then, resin, especially an exposed surface layer 5 sets with hot air 4 in about a few minutes. After that, the whole of resin set is set by using a block heater. Setting that is performed in an uppermost exposed surface layer 5 prior to complete setting in the whole body of junction resin prevents occurrences of a blow hole phenomenon and the run of resin. Then the yield of the semiconductor layer is thus improved.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a hollow semiconductor device.

[Conventional technology]

FIGS. 2, 8, and 4 are schematic diagrams showing the manufacturing process of a conventional hollow semiconductor device. In FIG. 2, 1 is an IC lead frame on which a semiconductor element is mounted; 21) G
Z upper and lower lids 3 are resins that join these upper and lower lids 2a, 2b and the lead frame 1, and in FIG.
6 is the hollow part of the semiconductor device, 7 is the outside of the semiconductor device, and 8
is resin 3ffll! FIG. 2 is a block heater for curing the semiconductor device after the resin curing process is completed. Next, in FIG. 4, 9 is a blowhole (through hole) created by the difference between the pressure P in the hollow part 6 of the semiconductor device and the pressure Pa at the outside 7 of the semiconductor device, and IO indicates the dripping of the resin 3. There is.

Next, the operation will be explained. In FIG. 2, an IC lead frame 1 with a semiconductor element mounted thereon is placed between the upper and lower lids 2 & 2b coated with resin 3, and they are joined together by sliding in the direction of the arrow M.

After that, in FIG. 8, 10 heaters 8 are placed around the semiconductor device to harden the resin 3, which is a bonding agent.
When heated, the internal pressure PI of the hollow s6 of the semiconductor device, which is completely sealed, is the same as above, and the pressure P of the outside 7 of the semiconductor device, which is the external pressure.
8 becomes larger, and therefore the force is applied in the direction of arrow B.

[Problem to be solved by the invention]

Since the conventional manufacturing method for hollow semiconductor devices is carried out as described above, if the force of arrow B occurs before the resin is completely cured in FIG. 8, a blowhole 9 as shown in FIG. occurs, resulting in product defects.

In addition, if it takes a long time for the resin to harden, the resin will drip as shown in W, knocking down the gold wire, or flowing onto the external lead to be coated, causing plating on the external lead.
The present invention was made to solve the above-mentioned problems, and aims to prevent the blowhole phenomenon as well as resin dripping.

[Means to solve the problem]

In the method for manufacturing a hollow semiconductor device according to the present invention, in the process of bonding the lead frame and the upper and lower lids with resin, the exposed outermost surface of the resin is rapidly cured by blowing hot air onto the resin from outside the semiconductor device. 0 [Function] The method for manufacturing a hollow semiconductor device according to the present invention prevents blowhole defects and resin dripping by blowing hot air from outside the semiconductor device to harden the resin surface. prevent.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, 1.2&, 2h, and 3 are the same as those in the conventional example, 4 is the hot air blown, and 5 is the exposed outermost surface layer of the resin completely cured by the hot air blowing.

Next, the operation will be explained. As in Fig. 2, the upper and lower 7 cylinders 2L and 2b coated with resin 3 and the semiconductor element are mounted on the tower.
10 and the lead frame 1, as shown in FIG. 1, hot air 4 is blown from the outside of the hollow semiconductor device toward the bonded resin portion of the semiconductor device, so that the resin (particularly the exposed outermost layer) is The hot air 4 hardens in about several minutes. Thereafter, the entire resin is cured using the prong heater 8 as in FIG.

In the above embodiment, the exposed outermost surface layer on the image side was cured by hot air blowing, and then the entire resin was cured by a block heater, but both may be carried out at the same time to obtain the same effect as in the above embodiment. [Effects of the Invention] As described above, according to the present invention, since the exposed outermost layer is cured before the entire bonding resin is completely cured, the blowhole phenomenon does not occur and the resin drips. Since this does not occur, the yield (rate of non-defective products) of semiconductor devices is improved.

[Brief explanation of drawings]

FIG. 1 is a schematic sectional view of a hollow semiconductor device according to an embodiment of the present invention, and FIG. 2 is a schematic sectional view of a state in which upper and lower lids coated with resin are joined to an IO lead frame on which a semiconductor element is mounted. , FIG. 8 is a schematic cross-sectional view of a curing process state in which the bonding resin is cured, and FIG. 4 is a schematic cross-sectional view of a semiconductor device showing blowholes and resin dripping that occur when manufactured by a conventional manufacturing method. 0 In the figure, IGxto lead frame, C are upper and lower lids, 3
4 is the bonding resin, 4 is the hot air, and 5 is the exposed outermost surface layer of the resin.

Claims (1)

[Claims] In the manufacturing process of a hollow semiconductor device, in which the upper and lower lids and the IC lead frame on which the semiconductor element is mounted are bonded with resin, and the resin is cured, the exposed surface of the bonding resin is exposed from outside the semiconductor device. A method for manufacturing a hollow semiconductor device, characterized in that by blowing hot air, the exposed outermost surface is quickly cured before the entire resin is completely cured.