JPH04342234A - Liquid crystal display device - Google Patents
Liquid crystal display deviceInfo
- Publication number
- JPH04342234A JPH04342234A JP3115013A JP11501391A JPH04342234A JP H04342234 A JPH04342234 A JP H04342234A JP 3115013 A JP3115013 A JP 3115013A JP 11501391 A JP11501391 A JP 11501391A JP H04342234 A JPH04342234 A JP H04342234A
- Authority
- JP
- Japan
- Prior art keywords
- conductive film
- section
- lower conductive
- liquid crystal
- upper conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 22
- 238000003860 storage Methods 0.000 claims description 31
- 239000003990 capacitor Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 7
- 238000009825 accumulation Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 89
- 239000010409 thin film Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010407 anodic oxide Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、表示画面を構成する複
数の絵素電極部ごとにスイツチング素子部と蓄積容量部
が付加された、いわゆるアクテイブ・マトリツクス型の
液晶表示装置の構造に関するものである。[Field of Industrial Application] The present invention relates to the structure of a so-called active matrix type liquid crystal display device in which a switching element section and a storage capacitor section are added to each of a plurality of picture element electrode sections constituting a display screen. be.
【０００２】0002
【従来の技術】図４は従来のアクテイブ・マトリツクス
型液晶表示装置１の一部を拡大した平面図であり、図５
は図４のＡ−Ａ断面図である。図示の如く、従来のアク
テイブ・マトリツクス型液晶表示装置１では、ガラス基
板６上の表示画面にマトリツクス状に配列形成された複
数の透明絵素電極部２を有している。この各絵素電極部
２の側方には、絵素電極部２への電圧をオンオフする非
線形のスイツチング素子部（薄膜トランジスタ）３と、
絵素電極部２の電荷を保持してそのオン時の電位を滑ら
かに維持する透明蓄積容量部（薄膜コンデンサ）Ｃｓと
がパターン形成されており、各絵素電極部２同士の間に
スイツチング素子部３へ駆動信号を供給するゲートバス
ライン４およびソースバスライン５が交互に交差するよ
うに形成されている。2. Description of the Related Art FIG. 4 is an enlarged plan view of a part of a conventional active matrix liquid crystal display device 1.
is a sectional view taken along line A-A in FIG. 4. As shown in the figure, a conventional active matrix type liquid crystal display device 1 has a plurality of transparent picture element electrode sections 2 arranged in a matrix on a display screen on a glass substrate 6. On the side of each picture element electrode part 2, there is a nonlinear switching element part (thin film transistor) 3 that turns on and off the voltage to the picture element electrode part 2.
A transparent storage capacitor (thin film capacitor) Cs that retains the charge of the picture element electrode part 2 and smoothly maintains its on-state potential is formed in a pattern, and a switching element is formed between each picture element electrode part 2. Gate bus lines 4 and source bus lines 5, which supply drive signals to section 3, are formed to alternately intersect.
【０００３】スイツチング素子部３は、ガラス基板６（
図５参照）上で前記ゲートバスライン４から延びたゲー
ト電極７上に、ゲート絶縁膜８，９を介して薄膜トラン
ジスタ（ＴＦＴ）素子３ａが形成されたものである。
素子３ａ上には、前記ソースバスライン５から延びたソ
ース電極１１と、絵素電極部２に接続されたドレイン電
極１２とが形成されている。The switching element section 3 includes a glass substrate 6 (
A thin film transistor (TFT) element 3a is formed on a gate electrode 7 extending from the gate bus line 4 (see FIG. 5) with gate insulating films 8 and 9 interposed therebetween. A source electrode 11 extending from the source bus line 5 and a drain electrode 12 connected to the picture element electrode section 2 are formed on the element 3a.
【０００４】また、従来における蓄積容量部Ｃｓは、図
５の如く、ガラス基板上６にゲートバスライン４と平行
に延びたバスライン状の透明下層導電膜１５と、下層導
電膜１５の上部全体を被覆する透明ゲート絶縁膜１６，
１７と、絵素電極部２と同一材料を用いて絶縁膜１６，
１７の上面に堆積された透明上部導電膜２０とから積層
されてなる。Further, as shown in FIG. 5, the conventional storage capacitor Cs includes a bus line-shaped transparent lower conductive film 15 extending parallel to the gate bus line 4 on the glass substrate 6, and the entire upper part of the lower conductive film 15. a transparent gate insulating film 16 covering
17, and an insulating film 16 using the same material as the picture element electrode part 2.
A transparent upper conductive film 20 is deposited on the upper surface of the conductive film 17.
【０００５】なお、一般に上部導電膜２０を絵素電極部
２と分離しているのは、絶縁距離の調整が微妙な蓄積容
量部Ｃｓにおいて欠陥が発生した場合に、蓄積容量部Ｃ
ｓのみの部分的修正を容易にするためである。[0005] Generally, the upper conductive film 20 is separated from the pixel electrode section 2 because, if a defect occurs in the storage capacitor section Cs where the insulation distance is delicately adjusted, the storage capacitor section Cs
This is to facilitate partial modification of only s.
【０００６】[0006]
【発明が解決しようとする課題】一般に、電荷の保持率
を上げるための蓄積容量部Ｃｓを形成するためには、極
めて微細かつ複雑な製造工程を経なければならず、この
ため下部導電膜１５の端部（パターンエツジ）に形状誤
差が生じることがあつた。そうすると、下部導電膜１５
のパターンエツジの一部が上部導電膜２０に接近してし
まい、絶縁膜１６，１７の一部に薄膜部分が発生し、故
に絶縁膜１６，１７でのリークによる絵素欠陥などが発
生することがあつた。[Problems to be Solved by the Invention] Generally, in order to form the storage capacitor Cs for increasing the charge retention rate, it is necessary to go through an extremely fine and complicated manufacturing process. A shape error sometimes occurred at the edge of the pattern (pattern edge). Then, the lower conductive film 15
A part of the pattern edge approaches the upper conductive film 20, and a thin film portion is generated in a part of the insulating films 16 and 17, resulting in pixel defects due to leakage in the insulating films 16 and 17. It was hot.
【０００７】すなわち、図５に示す従来の蓄積容量部Ｃ
ｓを形成する上部導電膜２０と酸化膜１６を含む下部導
電膜１５との両者の同方向パターンエツジは、膜の縦方
向において、図５中のＩ−Ｉに示すように同位置重畳に
なつており、蓄積容量部Ｃｓを形成する下部導電膜１５
のパターンエツジ形状が、プロセス状の問題、例えば、
レジストの密着性，露光，あるいは、エツチング等の変
動により、仕上がりパターン形状が悪い場合に、蓄積容
量部Ｃｓを形成する上部導電膜２０と下層導電膜１５と
のリークが発生し、表示パネル上の絵素欠陥となる。That is, the conventional storage capacitor C shown in FIG.
The pattern edges in the same direction of both the upper conductive film 20 forming the s and the lower conductive film 15 including the oxide film 16 overlap at the same position in the vertical direction of the film, as shown in II in FIG. The lower conductive film 15 forming the storage capacitance section Cs
The pattern edge shape of the process problem, e.g.
If the shape of the finished pattern is poor due to variations in resist adhesion, exposure, etching, etc., leakage occurs between the upper conductive film 20 and the lower conductive film 15 that form the storage capacitance section Cs, resulting in leakage on the display panel. This results in a pixel defect.
【０００８】なお、最近、欠陥部分の修正技術の開発が
益々進んでおり、例えば、レーザによる化学蒸着（ＣＶ
Ｄ）等によって数ミクロンのラインを切ったり、断線部
分をつないだりすることが可能になった。したがつて、
リークが発生した蓄積容量部Ｃｓのみを分離して修正す
ることも可能である。[0008] Recently, the development of techniques for repairing defective parts has progressed more and more. For example, chemical vapor deposition (CV) using laser
D) has made it possible to cut lines of several microns and connect broken wires. Therefore,
It is also possible to separate and correct only the storage capacitor section Cs where the leak has occurred.
【０００９】しかし、実際問題、欠陥部分の修正は、修
正精度あるいは、修正範囲等の難易度によって膨大な時
間を要し、実用的な欠陥救済を行うことが難しい。However, as a practical matter, repairing a defective portion requires an enormous amount of time depending on the degree of difficulty such as the precision of repair and the range of repair, making it difficult to perform practical defect relief.
【００１０】本発明は、上記課題に鑑み、最も重要な表
示品位を決める絵素の欠陥の発生を、極力設計段階にて
抑制することのできる液晶表示装置の提供を目的とする
。SUMMARY OF THE INVENTION In view of the above problems, it is an object of the present invention to provide a liquid crystal display device in which the occurrence of defects in picture elements, which determine the most important display quality, can be suppressed as much as possible at the design stage.
【００１１】[0011]
【課題を解決するための手段】本発明請求項１による課
題解決手段は、図１〜３の如く、透明基板６上の表示画
面を構成する複数の絵素電極部２ごとにスイツチング素
子部３および蓄積容量部Ｃｓが設けられ、該蓄積容量部
Ｃｓは、前記絵素電極部２の側方に分離して配されかつ
接続子２０ａを介して絵素電極部２に接続される上部導
電膜２０と、該上部導電膜２０の下方に非接触で上部導
電膜２０に平行に配された下部導電膜１５と、該下部導
電膜１５と上部導電膜２０との間に介在された絶縁膜１
６，１７とから構成され、前記上部導電膜２０および下
部導電膜１５がパターン形成された液晶表示装置におい
て、前記上部導電膜２０のパターンエツジ部は、下部導
電膜１５とのリークを防止するよう下部導電膜１５のパ
ターンエツジ部より内側に配されたものである。[Means for Solving the Problems] A means for solving the problems according to claim 1 of the present invention is as shown in FIGS. and a storage capacitance section Cs, the storage capacitance section Cs being an upper conductive film arranged separately on the side of the picture element electrode section 2 and connected to the picture element electrode section 2 via a connector 20a. 20, a lower conductive film 15 disposed below the upper conductive film 20 in a non-contact manner and parallel to the upper conductive film 20, and an insulating film 1 interposed between the lower conductive film 15 and the upper conductive film 20.
6 and 17, and in which the upper conductive film 20 and the lower conductive film 15 are patterned, the pattern edge portion of the upper conductive film 20 is formed to prevent leakage with the lower conductive film 15. It is arranged inside the pattern edge portion of the lower conductive film 15.
【００１２】本発明請求項２による課題解決手段は、請
求項１記載の液晶表示装置において、前記蓄積容量部Ｃ
ｓは、単一の絵素電極部２に対して少なくとも二分割以
上に分離して形成され、各蓄積容量部Ｃｓの上部導電膜
２０のパターンエツジ部は、下部導電膜１５とのリーク
を防止するよう下部導電膜１５のパターンエツジ部より
内側に配されたものである。Means for solving the problem according to claim 2 of the present invention is the liquid crystal display device according to claim 1, in which the storage capacitance section C
s is formed to be divided into at least two parts with respect to a single picture element electrode part 2, and the pattern edge part of the upper conductive film 20 of each storage capacitor part Cs prevents leakage with the lower conductive film 15. It is disposed inside the pattern edge portion of the lower conductive film 15 so that the pattern edge portion of the lower conductive film 15 is inward.
【００１３】[0013]
【作用】上記請求項１，２による課題解決手段において
、スイツチング素子部３を駆動させ、絵素電極部２に電
圧を印加する際に、必要以上に電圧がかかつても、蓄積
容量部Ｃｓにて電位を調整しその後の電荷の保持率を向
上させる。[Operation] In the problem solving means according to claims 1 and 2, even if the voltage is applied more than necessary when the switching element section 3 is driven and the voltage is applied to the picture element electrode section 2, the storage capacitance section Cs is This improves the subsequent charge retention rate by adjusting the potential.
【００１４】このとき、蓄積容量部Ｃｓにおける接地電
極としての下部導電膜１５のパターンエツジ部に形状誤
差があった場合、絶縁膜１６，１７の厚さが不均一とな
り、両導電膜１５，２０間でリークが発生するおそれが
あるが、上部導電膜２０のパターンエツジ部を下部導電
膜１５のパターンエツジ部より内側に配しているので、
絶縁膜１６，１７の厚さが均一な平坦部分にのみ上部導
電膜２０を形成でき、両導電膜１５，２０間でのリーク
発生を防止し得る。At this time, if there is a shape error in the pattern edge portion of the lower conductive film 15 serving as the ground electrode in the storage capacitance section Cs, the thicknesses of the insulating films 16 and 17 become uneven, and both conductive films 15 and 20 However, since the pattern edge portion of the upper conductive film 20 is arranged inside the pattern edge portion of the lower conductive film 15,
The upper conductive film 20 can be formed only on the flat portions of the insulating films 16 and 17 where the thickness is uniform, and leakage between the two conductive films 15 and 20 can be prevented.
【００１５】また、請求項２による課題解決手段におい
て、いずれかの蓄積容量部Ｃｓに上部導電膜２０のパタ
ーンエツジ部の形状誤差等の障害が発生し、下部導電膜
１５のパターンエツジ部と重畳しても、蓄積容量部Ｃｓ
を二分割以上に分離して形成しているので、障害が発生
した蓄積容量部Ｃｓのみを部分的に修正でき、きめ細か
な調整を行うことができる。Further, in the problem solving means according to claim 2, when a failure such as a shape error of the pattern edge portion of the upper conductive film 20 occurs in one of the storage capacitor portions Cs, the pattern edge portion overlaps with the pattern edge portion of the lower conductive film 15. Even if the storage capacitor Cs
Since it is formed by dividing it into two or more parts, it is possible to partially correct only the storage capacitor section Cs where a failure has occurred, and fine adjustments can be made.
【００１６】[0016]
【実施例】以下、本発明の一実施例を図面に基づいて説
明する。図１は本発明の一実施例を示す液晶表示装置の
全体を示す側面図、図２は同じくその一部拡大平面図、
図３は同じくそのＡ−Ａ断面図である。なお、従来と同
一機能を有する部材については同一符号を付している。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a side view showing the entirety of a liquid crystal display device showing an embodiment of the present invention, FIG. 2 is a partially enlarged plan view thereof,
FIG. 3 is a sectional view taken along the line AA. Note that the same reference numerals are given to members having the same functions as those in the past.
【００１７】一般に、液晶表示装置は、図１の如く、液
晶層Ｇの前後両面に透明電極板Ｘａ，Ｘｂが配され、さ
らに偏光板Ｈａ，Ｈｂが積層されてなる。そして、本実
施例の液晶表示装置は、そのうちの透明電極板Ｘａ，Ｘ
ｂについて、表示画面を構成する複数の透明絵素電極部
２ごとにスイツチング素子部３および透明蓄積容量部（
薄膜コンデンサ）Ｃｓがスパツタリング等の物理蒸着（
ＰＶＤ）や化学蒸着（ＣＶＤ）にてパターン形成された
アクテイブマトリクス型のものである。Generally, as shown in FIG. 1, a liquid crystal display device includes transparent electrode plates Xa and Xb arranged on both the front and rear surfaces of a liquid crystal layer G, and polarizing plates Ha and Hb further laminated thereon. The liquid crystal display device of this example has transparent electrode plates Xa and X.
Regarding b, a switching element section 3 and a transparent storage capacitor section (
Thin film capacitor) Cs is deposited by physical vapor deposition such as sputtering (
It is an active matrix type that is patterned using PVD (PVD) or chemical vapor deposition (CVD).
【００１８】前記絵素電極部２は、前記液晶層Ｇの液晶
分子に電圧を加えてその配光軸を回転させるための既存
のもので、図２，３の如く、透明のインジウムテインオ
キサイド（ＩＴＯ）が使用され、ガラス基板６上に例え
ば窒化絶縁膜１７を介して形成されている。The picture element electrode section 2 is an existing one for rotating the light distribution axis by applying a voltage to the liquid crystal molecules of the liquid crystal layer G, and as shown in FIGS. 2 and 3, it is made of transparent indium tein oxide ( ITO) is used, and is formed on the glass substrate 6 with, for example, a nitride insulating film 17 interposed therebetween.
【００１９】前記スイツチング素子部３は、図２に示す
ように、絵素電極部２に電圧を印加するための既存の薄
膜トランジスタ（ＴＦＴ）素子３ａであり、タンタル製
の駆動信号供給用ゲートバスライン４およびソースバス
ライン５の交差点に隣接され、該ゲートバスライン４か
らのオンオフ信号に基づき、ソースバスライン５上の電
流をドレイン電極１２を介して絵素電極部２に流すよう
接続されている。As shown in FIG. 2, the switching element section 3 is an existing thin film transistor (TFT) element 3a for applying voltage to the picture element electrode section 2, and has a gate bus line made of tantalum for supplying drive signals. 4 and the source bus line 5, and is connected so that the current on the source bus line 5 flows through the drain electrode 12 to the picture element electrode section 2 based on an on/off signal from the gate bus line 4. .
【００２０】前記蓄積容量部Ｃｓは、図２の如く、欠陥
発生時に小さな単位で部分的修正可能なよう、単一の絵
素電極部２に対して少なくとも二分割以上に分離して形
成されている。そして、概蓄積容量部Ｃｓは、図３の如
く、絵素電極部２の側方に分離して配されかつ接続子２
０ａを介して絵素電極部２に接続される上部導電膜２０
と、該上部導電膜２０の下方に非接触で上部導電膜２０
に平行に配された下部導電膜１５と、該下部導電膜１５
と上部導電膜２０との間に介在された絶縁膜１６，１７
とから構成されている。As shown in FIG. 2, the storage capacitance section Cs is formed so as to be divided into at least two parts with respect to the single picture element electrode section 2 so that it can be partially corrected in small units when a defect occurs. There is. As shown in FIG.
Upper conductive film 20 connected to picture element electrode section 2 via 0a
The upper conductive film 20 is placed below the upper conductive film 20 in a non-contact manner.
a lower conductive film 15 arranged parallel to the lower conductive film 15;
and the upper conductive film 20, the insulating films 16 and 17 are interposed between
It is composed of.
【００２１】前記上部導電膜２０は、絵素電極部２と同
一材料である透明のインジウムテインオキサイド（ＩＴ
Ｏ）が使用され、前記窒化絶縁膜１７の上面にパターン
形成されている。The upper conductive film 20 is made of transparent indium tein oxide (IT), which is the same material as the picture element electrode section 2.
O) is used and patterned on the upper surface of the nitride insulating film 17.
【００２２】前記下部導電膜１５は、ガラス基板６上に
前記ゲートバスライン４と平行に形成された従来と同様
のタンタル製バスラインで、外部配線を介してグランド
接続される。The lower conductive film 15 is a conventional tantalum bus line formed on the glass substrate 6 in parallel with the gate bus line 4, and is connected to the ground via external wiring.
【００２３】前記絶縁膜１６，１７は、下部導電膜１５
の上部全面を被覆する陽極酸化膜１６と、前記絵素電極
部２の下面から延設された窒化絶縁膜１７とが積層され
た透明の二層膜である。The insulating films 16 and 17 are connected to the lower conductive film 15.
It is a transparent two-layer film in which an anodic oxide film 16 covering the entire upper surface of the picture element electrode section 2 and a nitride insulating film 17 extending from the lower surface of the picture element electrode section 2 are laminated.
【００２４】そして、本実施例の液晶表示装置では、図
２，３の如く、前記上部導電膜２０のパターンエツジ部
は、形状誤差の発生するおそれのある下部導電膜１５の
パターンエツジ部に重畳するのを回避するため、これよ
り内側にずらして配置されている。ここで、上部導電膜
２０のパターンエツジ部を、下部導電膜１５のパターン
エツジ部の外側ではなく内側に形成するのは、上部導電
膜２０を絶縁膜１６，１７の平面部分のみに形成するこ
とにより、下部導電膜１５のパターンエツジ部の形状誤
差によるリークの発生を防止するためである。なお、上
部導電膜２０のパターンエツジ部の絶縁膜１６，１７の
盛り上がり始点からの距離Ｌ１，Ｌ２は１〜５μｍ程度
とされている。In the liquid crystal display device of this embodiment, as shown in FIGS. 2 and 3, the pattern edge portion of the upper conductive film 20 overlaps the pattern edge portion of the lower conductive film 15, where a shape error may occur. In order to avoid this, it is placed further inside than this. Here, the reason why the pattern edge portion of the upper conductive film 20 is formed inside the pattern edge portion of the lower conductive film 15 rather than outside is because the upper conductive film 20 is formed only on the planar portions of the insulating films 16 and 17. This is to prevent the occurrence of leakage due to a shape error in the pattern edge portion of the lower conductive film 15. Note that distances L1 and L2 of the pattern edge portion of the upper conductive film 20 from the starting points of the insulating films 16 and 17 are approximately 1 to 5 μm.
【００２５】上記構成において、図２の如く、複数本の
ソースバスライン５のうちのいずれかに電圧を印加し、
かつ、複数本のゲートバスライン４のうちのいずれかに
オン信号を与えると、両バスライン４，５の交差点に隣
接されたスイツチング素子部３が駆動して絵素電極部２
に電圧を印加し、図１の如く、液晶層Ｇの液晶分子の配
光軸を回転させる。In the above configuration, as shown in FIG. 2, a voltage is applied to one of the plurality of source bus lines 5,
Furthermore, when an on signal is applied to any one of the plurality of gate bus lines 4, the switching element section 3 adjacent to the intersection of both bus lines 4 and 5 is driven, and the pixel electrode section 2
A voltage is applied to rotate the light distribution axis of the liquid crystal molecules in the liquid crystal layer G as shown in FIG.
【００２６】ここで、絵素電極部２に必要以上に電荷が
加わつても、接続子２０ａにて接続された蓄積容量部Ｃ
ｓにて電位を調整し、かつ、蓄積容量部Ｃｓにて、その
後の電荷の保持率を向上させることが可能となる。Here, even if more charge is added to the picture element electrode section 2 than necessary, the storage capacitor section C connected by the connector 20a
It becomes possible to adjust the potential at s and improve the subsequent charge retention rate at the storage capacitor section Cs.
【００２７】このとき、蓄積容量部Ｃｓにおける接地電
極としての下部導電膜１５のパターンエツジ部に形状誤
差があった場合、絶縁膜１６，１７の厚さが不均一とな
り、両導電膜１５，２０間でリークが発生するおそれが
ある。しかし、本実施例では、図２，３の如く、上部導
電膜２０のパターンエツジ部を下部導電膜１５のパター
ンエツジ部より内側に配しているので、絶縁膜１６，１
７の厚さが不均一な部分に上部導電膜２０が重畳するの
を防止できる。したがつて、両導電膜１５，２０間での
リーク発生率は極めて少なくなり、液晶表示装置の表示
品位および歩留りが共に向上する。At this time, if there is a shape error in the pattern edge portion of the lower conductive film 15 serving as the ground electrode in the storage capacitor section Cs, the thicknesses of the insulating films 16 and 17 become uneven, and both conductive films 15 and 20 There is a risk of leaks occurring between the two. However, in this embodiment, as shown in FIGS. 2 and 3, the pattern edge portion of the upper conductive film 20 is arranged inside the pattern edge portion of the lower conductive film 15, so that the insulating films 16, 1
It is possible to prevent the upper conductive film 20 from overlapping the portions 7 having non-uniform thickness. Therefore, the rate of leakage between the conductive films 15 and 20 is extremely reduced, and both the display quality and yield of the liquid crystal display device are improved.
【００２８】なお、本発明は、上記実施例に限定される
ものではなく、本発明の範囲内で上記実施例に多くの修
正および変更を加え得ることは勿論である。例えば、本
実施例ではスイツチング素子部３として、三端子素子で
あるトランジスタ素子３ａに関連した構造について述べ
たが、例えば二端子素子のダイオード等をも適用するこ
とができる。It should be noted that the present invention is not limited to the above embodiments, and it goes without saying that many modifications and changes can be made to the above embodiments within the scope of the present invention. For example, in this embodiment, a structure related to the transistor element 3a, which is a three-terminal element, has been described as the switching element section 3, but a diode or the like, which is a two-terminal element, can also be applied.
【００２９】[0029]
【発明の効果】以上の説明から明らかな通り、本発明請
求項１，２によると、上部導電膜のパターンエツジ部を
下部導電膜のパターンエツジ部より内側に配しているの
で、下部導電膜のパターンエツジ部に形状誤差があつて
も、絶縁膜の厚さが均一な平坦部分にのみ上部導電膜を
形成でき、両導電膜間でのリーク発生を防止し得る。As is clear from the above description, according to claims 1 and 2 of the present invention, since the pattern edge portion of the upper conductive film is arranged inside the pattern edge portion of the lower conductive film, the lower conductive film Even if there is a shape error in the edge portion of the pattern, the upper conductive film can be formed only on the flat portion where the thickness of the insulating film is uniform, and leakage between the two conductive films can be prevented.
【００３０】また、請求項２による課題解決手段におい
て、蓄積容量部を二分割以上に分離して形成しているの
で、いずれかの蓄積容量部に上部導電膜のパターンエツ
ジ部の形状誤差等の障害が発生し、下部導電膜１５のパ
ターンエツジ部と重畳しても、障害が発生した蓄積容量
部のみを部分的に修正でき、きめ細かな調整を行うこと
ができるといつた優れた効果がある。Further, in the problem solving means according to claim 2, since the storage capacitor section is formed by dividing it into two or more parts, any one of the storage capacitor sections is free from errors in the shape of the pattern edge portion of the upper conductive film, etc. Even if a fault occurs and overlaps with the pattern edge portion of the lower conductive film 15, it is possible to partially correct only the storage capacitor portion where the fault has occurred, which is an excellent effect in that fine adjustments can be made. .
【図１】図１は本発明の一実施例を示す液晶表示装置の
全体を示す側面図である。FIG. 1 is a side view showing the entirety of a liquid crystal display device showing one embodiment of the present invention.
【図２】図２は同じくその一部拡大平面図である。FIG. 2 is a partially enlarged plan view of the same.
【図３】図３は同じくそのＡ−Ａ断面図である。FIG. 3 is a cross-sectional view taken along the line AA.
【図４】図４は従来における液晶表示装置の一部拡大平
面図である。FIG. 4 is a partially enlarged plan view of a conventional liquid crystal display device.
【図５】図５は同じくそのＡ−Ａ断面図である。FIG. 5 is a cross-sectional view taken along the line AA.
【符号の説明】
２ 絵素電極部
３ スイツチング素子部（薄膜トランジスタ（Ｔ
ＦＴ）素子部）
６ 透明基板
１５ 下部導電膜
１６，１７ 絶縁膜
２０ 上部導電膜
Ｃｓ 蓄積容量部[Explanation of symbols] 2 Picture element electrode section 3 Switching element section (thin film transistor (T
FT) element section) 6 Transparent substrate 15 Lower conductive films 16, 17 Insulating film 20 Upper conductive film Cs Storage capacitor section
Claims (2)
の絵素電極部ごとにスイツチング素子部および蓄積容量
部が設けられ、該蓄積容量部は、前記絵素電極部の側方
に分離して配されかつ接続子を介して絵素電極部に接続
される上部導電膜と、該上部導電膜の下方に非接触で上
部導電膜に平行に配された下部導電膜と、該下部導電膜
と上部導電膜との間に介在された絶縁膜とから構成され
、前記上部導電膜および下部導電膜がパターン形成され
た液晶表示装置において、前記上部導電膜のパターンエ
ツジ部は、下部導電膜とのリークを防止するよう下部導
電膜のパターンエツジ部より内側に配されたことを特徴
とする液晶表示装置。1. A switching element section and a storage capacitor section are provided for each of a plurality of picture element electrode sections constituting a display screen on a transparent substrate, and the storage capacitor section is separated to the side of the picture element electrode section. a lower conductive film disposed below the upper conductive film and parallel to the upper conductive film in a non-contact manner; and an insulating film interposed between the upper conductive film and the lower conductive film, and in which the upper conductive film and the lower conductive film are patterned, the pattern edge portion of the upper conductive film is in contact with the lower conductive film. A liquid crystal display device characterized in that the lower conductive film is arranged inside a pattern edge portion of the lower conductive film to prevent leakage.
、前記蓄積容量部は、単一の絵素電極部に対して少なく
とも二分割以上に分離して形成され、各蓄積容量部の上
部導電膜のパターンエツジ部は、下部導電膜とのリーク
を防止するよう下部導電膜のパターンエツジ部より内側
に配されたことを特徴とする液晶表示装置。2. The liquid crystal display device according to claim 1, wherein the storage capacitor section is formed to be divided into at least two parts with respect to a single picture element electrode section, and an upper conductive film of each storage capacitor section is divided into at least two parts. A liquid crystal display device characterized in that the pattern edge portion is arranged inside the pattern edge portion of the lower conductive film to prevent leakage with the lower conductive film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11501391A JP2640585B2 (en) | 1991-05-20 | 1991-05-20 | Liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11501391A JP2640585B2 (en) | 1991-05-20 | 1991-05-20 | Liquid crystal display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04342234A true JPH04342234A (en) | 1992-11-27 |
| JP2640585B2 JP2640585B2 (en) | 1997-08-13 |
Family
ID=14652105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11501391A Expired - Lifetime JP2640585B2 (en) | 1991-05-20 | 1991-05-20 | Liquid crystal display |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2640585B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6515720B1 (en) | 1998-07-14 | 2003-02-04 | Kabushiki Kaisha Toshiba | Active matrix liquid crystal display device |
| US8947607B2 (en) | 2010-12-08 | 2015-02-03 | Sharp Kabushiki Kaisha | Active matrix substrate and display device |
-
1991
- 1991-05-20 JP JP11501391A patent/JP2640585B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6515720B1 (en) | 1998-07-14 | 2003-02-04 | Kabushiki Kaisha Toshiba | Active matrix liquid crystal display device |
| US8947607B2 (en) | 2010-12-08 | 2015-02-03 | Sharp Kabushiki Kaisha | Active matrix substrate and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2640585B2 (en) | 1997-08-13 |
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