JP2640585B2 - Liquid crystal display - Google Patents

Liquid crystal display

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Publication number
JP2640585B2
JP2640585B2 JP11501391A JP11501391A JP2640585B2 JP 2640585 B2 JP2640585 B2 JP 2640585B2 JP 11501391 A JP11501391 A JP 11501391A JP 11501391 A JP11501391 A JP 11501391A JP 2640585 B2 JP2640585 B2 JP 2640585B2
Authority
JP
Japan
Prior art keywords
conductive film
storage capacitor
liquid crystal
upper conductive
lower conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP11501391A
Other languages
Japanese (ja)
Other versions
JPH04342234A (en
Inventor
秀則 音琴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Consejo Superior de Investigaciones Cientificas CSIC
Original Assignee
Consejo Superior de Investigaciones Cientificas CSIC
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Filing date
Publication date
Application filed by Consejo Superior de Investigaciones Cientificas CSIC filed Critical Consejo Superior de Investigaciones Cientificas CSIC
Priority to JP11501391A priority Critical patent/JP2640585B2/en
Publication of JPH04342234A publication Critical patent/JPH04342234A/en
Application granted granted Critical
Publication of JP2640585B2 publication Critical patent/JP2640585B2/en
Anticipated expiration legal-status Critical
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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、表示画面を構成する複
数の絵素電極部ごとにスイツチング素子部と蓄積容量部
が付加された、いわゆるアクテイブ・マトリツクス型の
液晶表示装置の構造に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a so-called active matrix type liquid crystal display device in which a switching element section and a storage capacitor section are added for each of a plurality of picture element electrodes constituting a display screen. is there.

【0002】[0002]

【従来の技術】図4は従来のアクテイブ・マトリツクス
型液晶表示装置1の一部を拡大した平面図であり、図5
は図4のA−A断面図である。図示の如く、従来のアク
テイブ・マトリツクス型液晶表示装置1では、ガラス基
板6上の表示画面にマトリツクス状に配列形成された複
数の透明絵素電極部2を有している。この各絵素電極部
2の側方には、絵素電極部2への電圧をオンオフする非
線形のスイツチング素子部(薄膜トランジスタ)3と、
絵素電極部2の電荷を保持してそのオン時の電位を滑ら
かに維持する透明蓄積容量部(薄膜コンデンサ)Csと
がパターン形成されており、各絵素電極部2同士の間に
スイツチング素子部3へ駆動信号を供給するゲートバス
ライン4およびソースバスライン5が交互に交差するよ
うに形成されている。
2. Description of the Related Art FIG. 4 is an enlarged plan view showing a part of a conventional active matrix type liquid crystal display device 1, and FIG.
FIG. 5 is a sectional view taken along line AA of FIG. 4. As shown in the drawing, the conventional active matrix type liquid crystal display device 1 has a plurality of transparent picture element electrodes 2 arranged in a matrix on a display screen on a glass substrate 6. A non-linear switching element unit (thin film transistor) 3 for turning on / off the voltage to the pixel electrode unit 2 is provided beside each of the pixel electrode units 2.
A transparent storage capacitor portion (thin film capacitor) Cs for holding the charge of the pixel electrode portion 2 and smoothly maintaining the ON-state potential thereof is formed in a pattern, and a switching element is provided between the pixel electrode portions 2. Gate bus lines 4 and source bus lines 5 for supplying drive signals to the section 3 are formed so as to intersect alternately.

【0003】スイツチング素子部3は、ガラス基板6
(図5参照)上で前記ゲートバスライン4から延びたゲ
ート電極7上に、ゲート絶縁膜8,9を介して薄膜トラ
ンジスタ(TFT)素子3aが形成されたものである。
素子3a上には、前記ソースバスライン5から延びたソ
ース電極11と、絵素電極部2に接続されたドレイン電
極12とが形成されている。
[0003] The switching element section 3 is made of a glass substrate 6.
A thin film transistor (TFT) element 3a is formed on a gate electrode 7 extending from the gate bus line 4 via gate insulating films 8 and 9 (see FIG. 5).
On the element 3a, a source electrode 11 extending from the source bus line 5 and a drain electrode 12 connected to the pixel electrode section 2 are formed.

【0004】また、従来における蓄積容量部Csは、図
5の如く、ガラス基板上6にゲートバスライン4と平行
に延びたバスライン状の透明下層導電膜15と、下層導
電膜15の上部全体を被覆する透明ゲート絶縁膜16,
17と、絵素電極部2と同一材料を用いて絶縁膜16,
17の上面に堆積された透明上部導電膜20とから積層
されてなる。
[0005] Further, as shown in FIG. 5, a conventional storage capacitor portion Cs includes a bus-line-shaped transparent lower conductive film 15 extending in parallel with the gate bus line 4 on a glass substrate 6, and the entire upper portion of the lower conductive film 15. Transparent gate insulating film 16, which covers
17 and the insulating film 16 using the same material as the pixel electrode portion 2.
17 and a transparent upper conductive film 20 deposited on the upper surface of the substrate 17.

【0005】なお、一般に上部導電膜20を絵素電極部
2と分離しているのは、絶縁距離の調整が微妙な蓄積容
量部Csにおいて欠陥が発生した場合に、蓄積容量部C
sのみの部分的修正を容易にするためである。
In general, the upper conductive film 20 is separated from the picture element electrode part 2 when the storage capacitance part Cs whose insulation distance is delicately adjusted has a defect.
This is for facilitating the partial modification of only s.

【0006】[0006]

【発明が解決しようとする課題】一般に、電荷の保持率
を上げるための蓄積容量部Csを形成するためには、極
めて微細かつ複雑な製造工程を経なければならず、この
ため下部導電膜15の端部(パターンエツジ)に形状誤
差が生じることがあつた。そうすると、下部導電膜15
のパターンエツジの一部が上部導電膜20に接近してし
まい、絶縁膜16,17の一部に薄膜部分が発生し、故
に絶縁膜16,17でのリークによる絵素欠陥などが発
生することがあつた。
Generally, in order to form the storage capacitor portion Cs for increasing the charge retention, an extremely fine and complicated manufacturing process must be performed. In some cases, a shape error occurs at the end (pattern edge). Then, the lower conductive film 15
A part of the pattern edge approaches the upper conductive film 20, and a thin film part is generated in a part of the insulating films 16 and 17, so that a pixel defect due to a leak in the insulating films 16 and 17 occurs. There was.

【0007】すなわち、図5に示す従来の蓄積容量部C
sを形成する上部導電膜20と酸化膜16を含む下部導
電膜15との両者の同方向パターンエツジは、膜の縦方
向において、図5中のI−Iに示すように同位置重畳に
なつており、蓄積容量部Csを形成する下部導電膜15
のパターンエツジ形状が、プロセス状の問題、例えば、
レジストの密着性,露光,あるいは、エツチング等の変
動により、仕上がりパターン形状が悪い場合に、蓄積容
量部Csを形成する上部導電膜20と下層導電膜15と
のリークが発生し、表示パネル上の絵素欠陥となる。
That is, the conventional storage capacitor section C shown in FIG.
The same-direction pattern edges of both the upper conductive film 20 forming s and the lower conductive film 15 including the oxide film 16 are overlapped at the same position in the longitudinal direction of the film as shown by II in FIG. And the lower conductive film 15 forming the storage capacitor portion Cs
The pattern edge shape is a process-like problem, for example,
When the finished pattern shape is poor due to variations in the adhesion of the resist, exposure, etching, or the like, a leak occurs between the upper conductive film 20 and the lower conductive film 15 that form the storage capacitor portion Cs, and the display panel has a leak. It becomes a picture element defect.

【0008】なお、最近、欠陥部分の修正技術の開発が
益々進んでおり、例えば、レーザによる化学蒸着(CV
D)等によって数ミクロンのラインを切ったり、断線部
分をつないだりすることが可能になった。したがつて、
リークが発生した蓄積容量部Csのみを分離して修正す
ることも可能である。
Recently, techniques for repairing defective portions have been developed more and more, for example, by chemical vapor deposition (CV) using a laser.
D) and the like make it possible to cut lines of several microns or to connect broken lines. Therefore,
It is also possible to separate and correct only the storage capacitor portion Cs where the leak has occurred.

【0009】しかし、実際問題、欠陥部分の修正は、修
正精度あるいは、修正範囲等の難易度によって膨大な時
間を要し、実用的な欠陥救済を行うことが難しい。
However, repairing an actual problem or a defective portion requires an enormous amount of time depending on the degree of difficulty of the correction accuracy or the correction range, and it is difficult to perform practical defect relief.

【0010】本発明は、上記課題に鑑み、最も重要な表
示品位を決める絵素の欠陥の発生を、極力設計段階にて
抑制することのできる液晶表示装置の提供を目的とす
る。
In view of the above problems, it is an object of the present invention to provide a liquid crystal display device capable of minimizing the generation of picture element defects that determine the most important display quality at the design stage.

【0011】[0011]

【課題を解決するための手段】本発明請求項1による課
題解決手段は、図1〜3の如く、透明基板6上の表示画
面を構成する複数の絵素電極部2ごとにスイツチング素
子部3および蓄積容量部Csが設けられ、該蓄積容量部
Csは、前記絵素電極部2の側方に分離して配されかつ
接続子20aを介して絵素電極部2に接続される上部導
電膜20と、該上部導電膜20の下方に非接触で上部導
電膜20に平行に配された下部導電膜15と、該下部導
電膜15と上部導電膜20との間に介在された絶縁膜1
6,17とから構成され、前記上部導電膜20および下
部導電膜15がパターン形成された液晶表示装置におい
て、前記上部導電膜20のパターンエツジ部は、下部導
電膜15とのリークを防止するよう下部導電膜15のパ
ターンエツジ部より内側に配されたものである。
According to the first aspect of the present invention, as shown in FIGS. 1 to 3, a switching element section 3 is provided for each of a plurality of picture element electrodes 2 constituting a display screen on a transparent substrate 6. And a storage capacitor section Cs. The storage capacitor section Cs is separately disposed on the side of the pixel electrode section 2 and is connected to the pixel electrode section 2 via the connector 20a. 20, a lower conductive film 15 disposed below the upper conductive film 20 in a non-contact manner and in parallel with the upper conductive film 20, and an insulating film 1 interposed between the lower conductive film 15 and the upper conductive film 20.
6, 17 wherein the upper conductive film 20 and the lower conductive film 15 are patterned to form a pattern edge of the upper conductive film 20 so as to prevent leakage with the lower conductive film 15. The lower conductive film 15 is provided inside the pattern edge portion.

【0012】本発明請求項2による課題解決手段は、請
求項1記載の液晶表示装置において、前記蓄積容量部C
sは、単一の絵素電極部2に対して少なくとも二分割以
上に分離して形成され、各蓄積容量部Csの上部導電膜
20のパターンエツジ部は、下部導電膜15とのリーク
を防止するよう下部導電膜15のパターンエツジ部より
内側に配されたものである。
According to a second aspect of the present invention, there is provided a liquid crystal display device according to the first aspect, wherein the storage capacitor section C is provided.
s is formed so as to be divided into at least two or more portions with respect to the single pixel electrode portion 2, and the pattern edge portion of the upper conductive film 20 of each storage capacitor portion Cs prevents leakage with the lower conductive film 15. The lower conductive film 15 is arranged inside the pattern edge portion.

【0013】[0013]

【作用】上記請求項1,2による課題解決手段におい
て、スイツチング素子部3を駆動させ、絵素電極部2に
電圧を印加する際に、必要以上に電圧がかかつても、蓄
積容量部Csにて電位を調整しその後の電荷の保持率を
向上させる。
According to the first and second aspects of the present invention, when the switching element section is driven to apply a voltage to the picture element electrode section, the voltage is applied to the storage capacitor section even if an excessive voltage is applied. To adjust the potential to improve the subsequent charge retention.

【0014】このとき、蓄積容量部Csにおける接地電
極としての下部導電膜15のパターンエツジ部に形状誤
差があった場合、絶縁膜16,17の厚さが不均一とな
り、両導電膜15,20間でリークが発生するおそれが
あるが、上部導電膜20のパターンエツジ部を下部導電
膜15のパターンエツジ部より内側に配しているので、
絶縁膜16,17の厚さが均一な平坦部分にのみ上部導
電膜20を形成でき、両導電膜15,20間でのリーク
発生を防止し得る。
At this time, if there is a shape error in the pattern edge portion of the lower conductive film 15 as the ground electrode in the storage capacitor portion Cs, the thicknesses of the insulating films 16 and 17 become non-uniform, and the two conductive films 15 and 20 become non-uniform. Although there is a possibility that a leak may occur between them, since the pattern edge of the upper conductive film 20 is arranged inside the pattern edge of the lower conductive film 15,
The upper conductive film 20 can be formed only on flat portions where the thicknesses of the insulating films 16 and 17 are uniform, and leakage between the conductive films 15 and 20 can be prevented.

【0015】また、請求項2による課題解決手段におい
て、いずれかの蓄積容量部Csに上部導電膜20のパタ
ーンエツジ部の形状誤差等の障害が発生し、下部導電膜
15のパターンエツジ部と重畳しても、蓄積容量部Cs
を二分割以上に分離して形成しているので、障害が発生
した蓄積容量部Csのみを部分的に修正でき、きめ細か
な調整を行うことができる。
According to the second aspect of the present invention, a failure such as a shape error of a pattern edge portion of the upper conductive film 20 occurs in any one of the storage capacitor portions Cs and overlaps with the pattern edge portion of the lower conductive film 15. However, the storage capacity section Cs
Is divided into two or more parts, so that only the storage capacitor portion Cs in which a failure has occurred can be partially corrected, and fine adjustment can be performed.

【0016】[0016]

【実施例】以下、本発明の一実施例を図面に基づいて説
明する。図1は本発明の一実施例を示す液晶表示装置の
全体を示す側面図、図2は同じくその一部拡大平面図、
図3は同じくそのA−A断面図である。なお、従来と同
一機能を有する部材については同一符号を付している。
An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a side view showing an entire liquid crystal display device according to an embodiment of the present invention, FIG.
FIG. 3 is a sectional view taken along line AA of FIG. Note that members having the same functions as those of the related art are denoted by the same reference numerals.

【0017】一般に、液晶表示装置は、図1の如く、液
晶層Gの前後両面に透明電極板Xa,Xbが配され、さ
らに偏光板Ha,Hbが積層されてなる。そして、本実
施例の液晶表示装置は、そのうちの透明電極板Xa,X
bについて、表示画面を構成する複数の透明絵素電極部
2ごとにスイツチング素子部3および透明蓄積容量部
(薄膜コンデンサ)Csがスパツタリング等の物理蒸着
(PVD)や化学蒸着(CVD)にてパターン形成され
たアクテイブマトリクス型のものである。
In general, as shown in FIG. 1, the liquid crystal display device has transparent electrode plates Xa and Xb disposed on both front and rear surfaces of a liquid crystal layer G, and further has polarizing plates Ha and Hb laminated thereon. Then, the liquid crystal display device of this embodiment has the transparent electrode plates Xa, X
For b, the switching element section 3 and the transparent storage capacitor section (thin film capacitor) Cs are patterned by physical vapor deposition (PVD) such as sputtering or chemical vapor deposition (CVD) for each of the plurality of transparent picture element electrodes 2 constituting the display screen. The active matrix type is formed.

【0018】前記絵素電極部2は、前記液晶層Gの液晶
分子に電圧を加えてその配光軸を回転させるための既存
のもので、図2,3の如く、透明のインジウムテインオ
キサイド(ITO)が使用され、ガラス基板6上に例え
ば窒化絶縁膜17を介して形成されている。
The picture element electrode section 2 is an existing one for applying a voltage to the liquid crystal molecules of the liquid crystal layer G to rotate the light distribution axis thereof. As shown in FIGS. It is formed on the glass substrate 6 with a nitride insulating film 17 interposed therebetween, for example.

【0019】前記スイツチング素子部3は、図2に示す
ように、絵素電極部2に電圧を印加するための既存の薄
膜トランジスタ(TFT)素子3aであり、タンタル製
の駆動信号供給用ゲートバスライン4およびソースバス
ライン5の交差点に隣接され、該ゲートバスライン4か
らのオンオフ信号に基づき、ソースバスライン5上の電
流をドレイン電極12を介して絵素電極部2に流すよう
接続されている。
As shown in FIG. 2, the switching element section 3 is an existing thin film transistor (TFT) element 3a for applying a voltage to the picture element electrode section 2, and is a gate bus line for supplying a drive signal made of tantalum. 4 and is connected to the source bus line 5 so that a current on the source bus line 5 flows to the pixel electrode unit 2 via the drain electrode 12 based on an on / off signal from the gate bus line 4. .

【0020】前記蓄積容量部Csは、図2の如く、欠陥
発生時に小さな単位で部分的修正可能なよう、単一の絵
素電極部2に対して少なくとも二分割以上に分離して形
成されている。そして、概蓄積容量部Csは、図3の如
く、絵素電極部2の側方に分離して配されかつ接続子2
0aを介して絵素電極部2に接続される上部導電膜20
と、該上部導電膜20の下方に非接触で上部導電膜20
に平行に配された下部導電膜15と、該下部導電膜15
と上部導電膜20との間に介在された絶縁膜16,17
とから構成されている。
As shown in FIG. 2, the storage capacitor section Cs is formed so as to be at least divided into two or more with respect to a single picture element electrode section 2 so that partial correction can be made in small units when a defect occurs. I have. As shown in FIG. 3, the storage capacitor portion Cs is arranged separately on the side of the pixel electrode portion 2 and is connected to the connector 2.
Upper conductive film 20 connected to pixel electrode unit 2
And a non-contact upper conductive film 20 under the upper conductive film 20.
Lower conductive film 15 arranged in parallel to
Insulating films 16 and 17 interposed between the upper conductive film 20 and
It is composed of

【0021】前記上部導電膜20は、絵素電極部2と同
一材料である透明のインジウムテインオキサイド(IT
O)が使用され、前記窒化絶縁膜17の上面にパターン
形成されている。
The upper conductive film 20 is made of a transparent indium tin oxide (IT) made of the same material as that of the pixel electrode portion 2.
O) is used, and is patterned on the upper surface of the nitride insulating film 17.

【0022】前記下部導電膜15は、ガラス基板6上に
前記ゲートバスライン4と平行に形成された従来と同様
のタンタル製バスラインで、外部配線を介してグランド
接続される。
The lower conductive film 15 is a conventional tantalum bus line formed on the glass substrate 6 in parallel with the gate bus line 4 and is grounded via an external wiring.

【0023】前記絶縁膜16,17は、下部導電膜15
の上部全面を被覆する陽極酸化膜16と、前記絵素電極
部2の下面から延設された窒化絶縁膜17とが積層され
た透明の二層膜である。
The insulating films 16 and 17 are formed of the lower conductive film 15.
Is a transparent two-layer film in which an anodic oxide film 16 covering the entire upper surface of the substrate and a nitride insulating film 17 extending from the lower surface of the picture element electrode portion 2 are laminated.

【0024】そして、本実施例の液晶表示装置では、図
2,3の如く、前記上部導電膜20のパターンエツジ部
は、形状誤差の発生するおそれのある下部導電膜15の
パターンエツジ部に重畳するのを回避するため、これよ
り内側にずらして配置されている。ここで、上部導電膜
20のパターンエツジ部を、下部導電膜15のパターン
エツジ部の外側ではなく内側に形成するのは、上部導電
膜20を絶縁膜16,17の平面部分のみに形成するこ
とにより、下部導電膜15のパターンエツジ部の形状誤
差によるリークの発生を防止するためである。なお、上
部導電膜20のパターンエツジ部の絶縁膜16,17の
盛り上がり始点からの距離L1,L2は1〜5μm程度
とされている。
In the liquid crystal display device of this embodiment, as shown in FIGS. 2 and 3, the pattern edge of the upper conductive film 20 overlaps with the pattern edge of the lower conductive film 15 where a shape error may occur. In order to avoid this, they are arranged shifted inward from this. Here, the reason why the pattern edge portion of the upper conductive film 20 is formed not inside but outside the pattern edge portion of the lower conductive film 15 is that the upper conductive film 20 is formed only on the plane portions of the insulating films 16 and 17. This is to prevent the occurrence of a leak due to a shape error of the pattern edge portion of the lower conductive film 15. The distances L1 and L2 from the starting point of the rise of the insulating films 16 and 17 in the pattern edge portion of the upper conductive film 20 are about 1 to 5 μm.

【0025】上記構成において、図2の如く、複数本の
ソースバスライン5のうちのいずれかに電圧を印加し、
かつ、複数本のゲートバスライン4のうちのいずれかに
オン信号を与えると、両バスライン4,5の交差点に隣
接されたスイツチング素子部3が駆動して絵素電極部2
に電圧を印加し、図1の如く、液晶層Gの液晶分子の配
光軸を回転させる。
In the above configuration, as shown in FIG. 2, a voltage is applied to one of the plurality of source bus lines 5,
When an ON signal is given to one of the plurality of gate bus lines 4, the switching element unit 3 adjacent to the intersection of the two bus lines 4 and 5 is driven to drive the pixel electrode unit 2
To rotate the light distribution axis of the liquid crystal molecules in the liquid crystal layer G as shown in FIG.

【0026】ここで、絵素電極部2に必要以上に電荷が
加わつても、接続子20aにて接続された蓄積容量部C
sにて電位を調整し、かつ、蓄積容量部Csにて、その
後の電荷の保持率を向上させることが可能となる。
Here, even if a charge is applied to the pixel electrode portion 2 more than necessary, the storage capacitor portion C connected by the connector 20a
s, the potential can be adjusted, and the storage capacitor Cs can improve the subsequent charge retention rate.

【0027】このとき、蓄積容量部Csにおける接地電
極としての下部導電膜15のパターンエツジ部に形状誤
差があった場合、絶縁膜16,17の厚さが不均一とな
り、両導電膜15,20間でリークが発生するおそれが
ある。しかし、本実施例では、図2,3の如く、上部導
電膜20のパターンエツジ部を下部導電膜15のパター
ンエツジ部より内側に配しているので、絶縁膜16,1
7の厚さが不均一な部分に上部導電膜20が重畳するの
を防止できる。したがつて、両導電膜15,20間での
リーク発生率は極めて少なくなり、液晶表示装置の表示
品位および歩留りが共に向上する。
At this time, if there is a shape error in the pattern edge portion of the lower conductive film 15 as the ground electrode in the storage capacitor portion Cs, the thicknesses of the insulating films 16 and 17 become non-uniform, and the two conductive films 15 and 20 become uneven. Leakage may occur between the two. However, in the present embodiment, as shown in FIGS. 2 and 3, the pattern edge portion of the upper conductive film 20 is disposed inside the pattern edge portion of the lower conductive film 15, so that the insulating films 16 and 1 are formed.
The upper conductive film 20 can be prevented from overlapping the portion where the thickness of the layer 7 is not uniform. Accordingly, the rate of occurrence of leakage between the two conductive films 15 and 20 is extremely reduced, and both the display quality and the yield of the liquid crystal display device are improved.

【0028】なお、本発明は、上記実施例に限定される
ものではなく、本発明の範囲内で上記実施例に多くの修
正および変更を加え得ることは勿論である。例えば、本
実施例ではスイツチング素子部3として、三端子素子で
あるトランジスタ素子3aに関連した構造について述べ
たが、例えば二端子素子のダイオード等をも適用するこ
とができる。
It should be noted that the present invention is not limited to the above-described embodiment, and it goes without saying that many modifications and changes can be made to the above-described embodiment within the scope of the present invention. For example, in the present embodiment, the structure relating to the transistor element 3a, which is a three-terminal element, has been described as the switching element section 3. However, for example, a two-terminal element diode or the like can be applied.

【0029】[0029]

【発明の効果】以上の説明から明らかな通り、本発明請
求項1,2によると、上部導電膜のパターンエツジ部を
下部導電膜のパターンエツジ部より内側に配しているの
で、下部導電膜のパターンエツジ部に形状誤差があつて
も、絶縁膜の厚さが均一な平坦部分にのみ上部導電膜を
形成でき、両導電膜間でのリーク発生を防止し得る。
As is apparent from the above description, according to the first and second aspects of the present invention, the pattern edge of the upper conductive film is disposed inside the pattern edge of the lower conductive film. Even if there is a shape error in the pattern edge portion, the upper conductive film can be formed only on a flat portion where the thickness of the insulating film is uniform, and the occurrence of a leak between the two conductive films can be prevented.

【0030】また、請求項2による課題解決手段におい
て、蓄積容量部を二分割以上に分離して形成しているの
で、いずれかの蓄積容量部に上部導電膜のパターンエツ
ジ部の形状誤差等の障害が発生し、下部導電膜15のパ
ターンエツジ部と重畳しても、障害が発生した蓄積容量
部のみを部分的に修正でき、きめ細かな調整を行うこと
ができるといつた優れた効果がある。
According to the second aspect of the present invention, since the storage capacitor portion is formed by dividing the storage capacitor portion into two or more divisions, any one of the storage capacitor portions has a shape error of the pattern edge portion of the upper conductive film. Even if a failure occurs and overlaps with the pattern edge portion of the lower conductive film 15, only the storage capacitor portion in which the failure has occurred can be partially corrected and fine adjustment can be performed. .

【図面の簡単な説明】[Brief description of the drawings]

【図1】図1は本発明の一実施例を示す液晶表示装置の
全体を示す側面図である。
FIG. 1 is a side view showing an entire liquid crystal display device according to an embodiment of the present invention.

【図2】図2は同じくその一部拡大平面図である。FIG. 2 is a partially enlarged plan view of the same.

【図3】図3は同じくそのA−A断面図である。FIG. 3 is a sectional view taken along the line AA of FIG.

【図4】図4は従来における液晶表示装置の一部拡大平
面図である。
FIG. 4 is a partially enlarged plan view of a conventional liquid crystal display device.

【図5】図5は同じくそのA−A断面図である。FIG. 5 is a sectional view taken along line AA of FIG.

【符号の説明】[Explanation of symbols]

2 絵素電極部 3 スイツチング素子部(薄膜トランジスタ(TF
T)素子部) 6 透明基板 15 下部導電膜 16,17 絶縁膜 20 上部導電膜 Cs 蓄積容量部
2 picture element electrode part 3 switching element part (thin film transistor (TF
T) element portion) 6 transparent substrate 15 lower conductive film 16, 17 insulating film 20 upper conductive film Cs storage capacitor portion

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 透明基板上の表示画面を構成する複数の
絵素電極部ごとにスイツチング素子部および蓄積容量部
が設けられ、該蓄積容量部は、前記絵素電極部の側方に
分離して配されかつ接続子を介して絵素電極部に接続さ
れる上部導電膜と、該上部導電膜の下方に非接触で上部
導電膜に平行に配された下部導電膜と、該下部導電膜と
上部導電膜との間に介在された絶縁膜とから構成され、
前記上部導電膜および下部導電膜がパターン形成された
液晶表示装置において、前記上部導電膜のパターンエツ
ジ部は、下部導電膜とのリークを防止するよう下部導電
膜のパターンエツジ部より内側に配されたことを特徴と
する液晶表示装置。
1. A switching element section and a storage capacitor section are provided for each of a plurality of picture element electrode sections constituting a display screen on a transparent substrate, and the storage capacitor section is separated from a side of the picture element electrode section. An upper conductive film, which is disposed and connected to the pixel electrode portion via a connector, a lower conductive film disposed below the upper conductive film in a non-contact manner and in parallel with the upper conductive film, and the lower conductive film And an insulating film interposed between the upper conductive film and
In a liquid crystal display device in which the upper conductive film and the lower conductive film are patterned, the pattern edge of the upper conductive film is disposed inside the pattern edge of the lower conductive film so as to prevent leakage with the lower conductive film. A liquid crystal display device characterized by the above-mentioned.
【請求項2】 請求項1記載の液晶表示装置において、
前記蓄積容量部は、単一の絵素電極部に対して少なくと
も二分割以上に分離して形成され、各蓄積容量部の上部
導電膜のパターンエツジ部は、下部導電膜とのリークを
防止するよう下部導電膜のパターンエツジ部より内側に
配されたことを特徴とする液晶表示装置。
2. The liquid crystal display device according to claim 1, wherein
The storage capacitor portion is formed so as to be separated into at least two or more portions with respect to a single pixel electrode portion, and the pattern edge portion of the upper conductive film of each storage capacitor portion prevents leakage with the lower conductive film. A liquid crystal display device disposed inside the pattern edge portion of the lower conductive film.
JP11501391A 1991-05-20 1991-05-20 Liquid crystal display Expired - Lifetime JP2640585B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11501391A JP2640585B2 (en) 1991-05-20 1991-05-20 Liquid crystal display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11501391A JP2640585B2 (en) 1991-05-20 1991-05-20 Liquid crystal display

Publications (2)

Publication Number Publication Date
JPH04342234A JPH04342234A (en) 1992-11-27
JP2640585B2 true JP2640585B2 (en) 1997-08-13

Family

ID=14652105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11501391A Expired - Lifetime JP2640585B2 (en) 1991-05-20 1991-05-20 Liquid crystal display

Country Status (1)

Country Link
JP (1) JP2640585B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100430773B1 (en) 1998-07-14 2004-05-10 가부시끼가이샤 도시바 Active matrix type liquid crystal displ ay
US8947607B2 (en) 2010-12-08 2015-02-03 Sharp Kabushiki Kaisha Active matrix substrate and display device

Also Published As

Publication number Publication date
JPH04342234A (en) 1992-11-27

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