JPH04337402A - Scanning type tunnel microscope - Google Patents
Scanning type tunnel microscopeInfo
- Publication number
- JPH04337402A JPH04337402A JP13827191A JP13827191A JPH04337402A JP H04337402 A JPH04337402 A JP H04337402A JP 13827191 A JP13827191 A JP 13827191A JP 13827191 A JP13827191 A JP 13827191A JP H04337402 A JPH04337402 A JP H04337402A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- probe electrode
- probe
- electrode
- cleaning tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000523 sample Substances 0.000 claims abstract description 123
- 238000004140 cleaning Methods 0.000 claims abstract description 18
- 230000005641 tunneling Effects 0.000 claims description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 16
- 238000005498 polishing Methods 0.000 abstract description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 10
- 230000005684 electric field Effects 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 8
- 229910052697 platinum Inorganic materials 0.000 abstract description 8
- 230000008929 regeneration Effects 0.000 abstract description 6
- 238000011069 regeneration method Methods 0.000 abstract description 6
- 238000005530 etching Methods 0.000 abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 5
- 238000007689 inspection Methods 0.000 abstract description 3
- 239000013074 reference sample Substances 0.000 abstract 2
- 230000003321 amplification Effects 0.000 description 8
- 238000003199 nucleic acid amplification method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- LPXPTNMVRIOKMN-UHFFFAOYSA-M sodium nitrite Chemical compound [Na+].[O-]N=O LPXPTNMVRIOKMN-UHFFFAOYSA-M 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005246 galvanizing Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- PXXKQOPKNFECSZ-UHFFFAOYSA-N platinum rhodium Chemical compound [Rh].[Pt] PXXKQOPKNFECSZ-UHFFFAOYSA-N 0.000 description 1
- HWLDNSXPUQTBOD-UHFFFAOYSA-N platinum-iridium alloy Chemical compound [Ir].[Pt] HWLDNSXPUQTBOD-UHFFFAOYSA-N 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 235000010288 sodium nitrite Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/10—STM [Scanning Tunnelling Microscopy] or apparatus therefor, e.g. STM probes
- G01Q60/16—Probes, their manufacture, or their related instrumentation, e.g. holders
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Radiology & Medical Imaging (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、物質表面を非接触で高
精度に観察するための走査型トンネル顕微鏡に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a scanning tunneling microscope for observing the surface of a substance in a non-contact manner with high precision.
【０００２】0002
【従来の技術】近年、物質表面及び表面近傍の電子構造
を直接観察できる走査型トンネル顕微鏡（以下ＳＴＭと
云う）が開発され［Ｇ． Ｂｉｎｎｉｇ ｅｔａｌ．，
Ｈｅｌｖｅｔｉｃａ Ｐｈｙｓｉｃａ ａｃｔａ， ５
５，７２６（１９８２）］、単結晶、非結晶を問わず高
分解能で実空間像の観測ができるようになり、しかも試
料物質に電流による損傷を殆ど与えずに低電力で測定で
きる利点をも有し、更には超高真空中のみならず大気中
、溶液中でも動作し、種々の材料に対して適用できるた
め広汎な応用が期待されている。BACKGROUND OF THE INVENTION In recent years, a scanning tunneling microscope (hereinafter referred to as STM) that can directly observe the electronic structure on and near the surface of a material has been developed [G. Binnig et al. ，
Helvetica Physica acta, 5
5, 726 (1982)], it has become possible to observe real space images with high resolution regardless of whether it is single crystal or amorphous, and it also has the advantage of being able to perform measurements with low power while causing almost no damage to the sample material due to the current. Furthermore, it is expected to have a wide range of applications because it can operate not only in ultra-high vacuum but also in the atmosphere and in solutions, and can be applied to various materials.
【０００３】このＳＴＭは金属のプローブ電極と導電性
試料との間に電圧を印加して、約１ｎｍ程度の距離まで
近付けると、トンネル電流が発生する現象を利用してお
り、面内方向の分解能は１オングストローム以上である
。この分解能はプローブ電極先端部の曲率半径で決定す
るため、一般的には白金やタングステンの先端を機械的
研摩や電界研摩によって円錐状に尖鋭化したものが使用
される。プローブ電極の先端は尖鋭であるために壊れ易
く、動作中に誤ってプローブ電極と試料面とが接触する
と、プローブ電極の先端形状が破壊し、トンネル電流が
流れ難くなって分解能の低下や、場合によってはＳＴＭ
像そのものが得られなくなることがある。[0003] This STM utilizes the phenomenon that a tunnel current is generated when a voltage is applied between a metal probe electrode and a conductive sample and the sample is brought close to a distance of about 1 nm, and the in-plane resolution is is 1 angstrom or more. Since this resolution is determined by the radius of curvature of the tip of the probe electrode, the tip of platinum or tungsten is generally sharpened into a conical shape by mechanical polishing or electric field polishing. Because the tip of the probe electrode is sharp, it is easily broken. If the probe electrode accidentally comes into contact with the sample surface during operation, the shape of the tip of the probe electrode will be destroyed, making it difficult for tunnel current to flow, resulting in a decrease in resolution and Depending on the STM
The image itself may not be obtained.
【０００４】こうした場合に、従来ではその都度予め先
端を先鋭化しておいた白金やタングステンのプローブ電
極に交換する必要があった。In such cases, conventionally, it has been necessary to replace the probe electrode with a platinum or tungsten probe electrode whose tip has been sharpened in advance each time.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら上述の従
来例においては、プローブ電極を交換する際に走査ユニ
ット全体を取り外さなければならないために操作性が悪
く、交換後の観察領域が交換前とは異なり再観察に時間
を要することになる。また、誤って落下、接触してプロ
ーブ電極の先端に損傷を与える危険性が大きく、装着後
のプローブ電極の分解能を検査するために、例えばＨＯ
ＰＧ（高配向熱分解クラファイト）等の標準試料の観察
を行う必要があるという問題点を有する。[Problems to be Solved by the Invention] However, in the above-mentioned conventional example, the operability is poor because the entire scanning unit must be removed when replacing the probe electrode, and the observation area after replacement is different from that before replacement. It will take time to re-observe. In addition, there is a high risk of damaging the tip of the probe electrode by accidentally dropping or touching it, so in order to inspect the resolution of the probe electrode after attachment, for example, HO
This method has a problem in that it is necessary to observe a standard sample such as PG (highly oriented pyrolytic graphite).
【０００６】本発明の目的は、上述の従来例の問題点を
解消し、劣化したプローブ電極の先端の再生、分解能検
査を操作性良く行えて、観察領域の再現性も良好な走査
型トンネル顕微鏡を提供することにある。An object of the present invention is to provide a scanning tunneling microscope that solves the above-mentioned problems of the conventional method, allows regeneration of the tip of a deteriorated probe electrode, and performs resolution inspection with good operability, and also has good reproducibility of the observation area. Our goal is to provide the following.
【０００７】[0007]
【課題を解決するための手段】上述の目的を達成するた
めの本発明に係る走査型トンネル顕微鏡は、試料ステー
ジ上の試料とプローブ電極との間に電圧を印加して接近
させ、流れるトンネル電流を検流して試料面の表面を観
察する走査型トンネル顕微鏡において、前記試料ステー
ジ上に配置した電界研磨槽と、前記プローブ電極を電極
とする電界研磨用電源回路と、前記試料ステージ上に配
置した洗浄槽と、前記試料ステージ駆動機構とを備えた
ことを特徴とするものである。[Means for Solving the Problems] A scanning tunneling microscope according to the present invention for achieving the above-mentioned object applies a voltage between a sample on a sample stage and a probe electrode to bring them closer together, and a tunneling current flows through the probe electrode. In a scanning tunneling microscope for observing the surface of a sample surface by galvanizing current, an electric field polishing tank placed on the sample stage, an electric field polishing power supply circuit using the probe electrode as an electrode, and a power supply circuit placed on the sample stage. The present invention is characterized by comprising a cleaning tank and the sample stage drive mechanism.
【０００８】[0008]
【作用】上述の構成を有する走査型トンネル顕微鏡は、
試料ステージを移動して劣化したプローブ電極の先端を
電界研磨槽に浸漬し、電界研磨用電気回路によって電流
を流してエッチング研摩した後に、更に試料ステージを
移動して洗浄槽に浸漬し、洗浄してプローブ電極の先端
を再生する。[Operation] The scanning tunneling microscope with the above configuration is
The sample stage is moved and the tip of the deteriorated probe electrode is immersed in an electrolytic polishing tank, and an electric current is passed through the electric field polishing circuit to perform etching polishing, and then the sample stage is further moved and the tip is immersed in a cleaning tank for cleaning. to regenerate the tip of the probe electrode.
【０００９】[0009]
【実施例】本発明を図示の実施例に基づいて詳細に説明
する。図１は斜視図であり、円形状の除震機構１上には
円形状の回転駆動制御機構２、回転式試料ステージ３が
載置され、回転式試料ステージ３は中心を回転軸として
矢印方向に回転可能とされている。回転式試料ステージ
３上の同心円上には試料４、ＮａＮＯ２ 等の水溶液と
白金電極５とを入れた電界研磨槽６、純水洗浄槽７、エ
タノール洗浄槽８、ＨＯＰＧ等の標準試料９が順次に配
置されている。回転式試料ステージ３の上方には粗動機
構１０が設けられ、この粗動機構１０には三次元ピエゾ
スキャナ１１が取り付けられ、三次元ピエゾスキャナ１
１にはプローブ保持管駆動機構１２が取り付けられ、タ
ングステンから成るプローブ電極１３を保持したプロー
ブ保持管１４がプローブ保持管駆動機構１２に取り付け
られている。そして、プローブ保持管駆動機構１２によ
ってプローブ保持管１４、プローブ電極１３の固定、解
除が可能とされている。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be explained in detail based on the illustrated embodiments. FIG. 1 is a perspective view, in which a circular rotational drive control mechanism 2 and a rotating sample stage 3 are placed on a circular vibration isolation mechanism 1, and the rotating sample stage 3 is rotated in the direction of the arrow with the center as the rotation axis. It is said that it can be rotated. A sample 4, an electrolytic polishing bath 6 containing an aqueous solution such as NaNO2 and a platinum electrode 5, a pure water cleaning bath 7, an ethanol cleaning bath 8, and a standard sample 9 such as HOPG are sequentially placed on a concentric circle on a rotating sample stage 3. It is located in A coarse movement mechanism 10 is provided above the rotary sample stage 3, and a three-dimensional piezo scanner 11 is attached to this coarse movement mechanism 10.
A probe holding tube drive mechanism 12 is attached to the probe holding tube drive mechanism 1, and a probe holding tube 14 holding a probe electrode 13 made of tungsten is attached to the probe holding tube drive mechanism 12. The probe holding tube 14 and the probe electrode 13 can be fixed and released by the probe holding tube drive mechanism 12.
【００１０】図２は制御回路の構成図であり、全体の制
御のためにＣＰＵ１５が設けられ、プローブ電極１３に
はトンネル電流増幅回路１６が接続され、試料４にはバ
イアス電圧発生回路１７が接続され、トンネル電流増幅
回路１６とバイアス電圧発生回路１７が接続されていて
、プローブ電極１３、試料４間に一定電圧を印加した状
態で両者間に流れるトンネル電流を検出するようになっ
ている。また、回転駆動制御機構２には回転駆動制御回
路１８の出力が接続され、粗動機構１０には粗動機構駆
動回路１９の出力が接続され、三次元ピエゾスキャナ１
１にはＸ−Ｙ走査駆動回路２０、サーボ回路２２の出力
が接続され、プローブ保持管駆動機構１２にはプローブ
保持管駆動回路２１の出力が接続されている。更に、サ
ーボ回路２２のの出力はトンネル電流増幅回路１６に接
続されていて、一定のトンネル電流が流れるように三次
元ピエゾスキャナ１１によって、プローブ電極１３、試
料４間の距離を所定間隔に保持するようにされている。
また、プローブ電極１３、白金電極５には電界研磨用電
源回路２３が接続されていて、ＣＰＵ１５はトンネル電
流増幅回路１６、バイアス電圧発生回路１７、回転駆動
制御回路１８、粗動機構駆動回路１９、Ｘ−Ｙ走査駆動
回路２０、プローブ保持管駆動回路２１、サーボ回路２
２、電界研磨用電源回路２３、テレビモニタ２４の全て
と接続されている。なお、図示を省略しているが、バイ
アス電圧発生回路１７を切換えて試料４から標準試料９
に接続することも可能である。FIG. 2 is a configuration diagram of the control circuit, in which a CPU 15 is provided for overall control, a tunnel current amplification circuit 16 is connected to the probe electrode 13, and a bias voltage generation circuit 17 is connected to the sample 4. A tunnel current amplification circuit 16 and a bias voltage generation circuit 17 are connected, and a tunnel current flowing between the probe electrode 13 and the sample 4 is detected while a constant voltage is applied between the probe electrode 13 and the sample 4. Further, the output of the rotational drive control circuit 18 is connected to the rotational drive control mechanism 2, the output of the coarse movement mechanism drive circuit 19 is connected to the coarse movement mechanism 10, and the three-dimensional piezo scanner 1
1 is connected to the outputs of an X-Y scan drive circuit 20 and a servo circuit 22, and the probe holding tube drive mechanism 12 is connected to the output of a probe holding tube drive circuit 21. Further, the output of the servo circuit 22 is connected to a tunnel current amplification circuit 16, and the distance between the probe electrode 13 and the sample 4 is maintained at a predetermined interval by the three-dimensional piezo scanner 11 so that a constant tunnel current flows. It is like that. Further, an electric field polishing power supply circuit 23 is connected to the probe electrode 13 and the platinum electrode 5, and the CPU 15 includes a tunnel current amplification circuit 16, a bias voltage generation circuit 17, a rotational drive control circuit 18, a coarse movement mechanism drive circuit 19, X-Y scan drive circuit 20, probe holding tube drive circuit 21, servo circuit 2
2. It is connected to the electric field polishing power supply circuit 23 and the television monitor 24. Although not shown in the figure, the bias voltage generation circuit 17 is switched from sample 4 to standard sample 9.
It is also possible to connect to
【００１１】試料４の表面状態観察方法は周知の方法で
あり、粗動機構駆動回路１９によって粗動機構１０を駆
動して、プローブ電極１３を試料４にほぼ接近させた後
に、三次元ピエゾスキャナ１１によって更に接近させ、
バイアス電圧発生回路１７によってプローブ電極１３、
試料４間に一定電圧を印加して、両者間にトンネル電流
を流す。このトンネル電流をトンネル電流増幅回路１６
により増幅して検出し、それが一定値となるように、即
ち両者の間隔を一定とするようにサーボ回路２２で三次
元ピエゾスキャナ１１を駆動し、Ｘ−Ｙ走査駆動回路２
０によって水平面でのＸＹ走査を行って得られた観察像
をテレビモニタ２４に表示する。The method for observing the surface state of the sample 4 is a well-known method, in which the coarse movement mechanism drive circuit 19 drives the coarse movement mechanism 10 to bring the probe electrode 13 almost close to the sample 4, and then the three-dimensional piezo scanner 11 to bring it even closer,
The bias voltage generation circuit 17 generates a probe electrode 13,
A constant voltage is applied between the samples 4 to cause a tunnel current to flow between them. This tunnel current is converted into a tunnel current amplification circuit 16.
The three-dimensional piezo scanner 11 is driven by the servo circuit 22 so that the amplified and detected value becomes a constant value, that is, the distance between the two is constant, and the X-Y scan drive circuit 2
0, an observed image obtained by performing XY scanning on the horizontal plane is displayed on the television monitor 24.
【００１２】観察中に、例えば試料４上の局所的突出部
にプローブ電極１３が接触して、その先端が破壊される
と分解能が低下する。その場合には、プローブ電極１３
とトンネル電流増幅回路１６間の接続を切って、粗動機
構駆動回路１９によってプローブ電極１３を鉛直方向に
引き上げ、劣化したプローブ電極１３の先端部をニッパ
等で適宜切断した後に、プローブ保持管駆動回路２１に
よってプローブ保持管駆動機構１２を駆動し、プローブ
保持管１４の管径を大きくして、プローブ電極１３を切
り落とした長さ分引き下げて再び固定する。During observation, if the probe electrode 13 comes into contact with, for example, a local protrusion on the sample 4 and its tip is destroyed, the resolution will be reduced. In that case, the probe electrode 13
The probe electrode 13 is pulled up in the vertical direction by the coarse movement mechanism drive circuit 19, and the deteriorated tip of the probe electrode 13 is appropriately cut with nippers, etc., and then the probe holding tube is driven. The probe holding tube drive mechanism 12 is driven by the circuit 21, the diameter of the probe holding tube 14 is increased, and the probe electrode 13 is pulled down by the cut length and fixed again.
【００１３】次に、図３に示すように回転駆動制御回路
１８によって回転式試料ステージ３を矢印方向に回転し
て、プローブ電極１３を電界研磨槽６の上方に移動し、
粗動機構１０によってプローブ電極１３を下げて電界研
磨槽６の液面下１ｍｍ程度浸漬し、電界研磨用電源回路
２３によってプローブ電極１３、白金電極５間に３０Ｖ
程度の交流電流を流して、エッチングによる電解研磨を
数分間行う。プローブ電極１３からの気泡発生が終了し
たら、プローブ電極１３を引き上げ、更に回転式試料ス
テージ３を回転して、プローブ電極１３を純水洗浄槽７
、エタノール洗浄槽８に順次に浸漬して洗浄を行う。
この際に、三次元ピエゾスキャナ１１によって、プロー
ブ電極１３をＸＹ方向に適当な振幅で移動すれば効果的
であり、この洗浄によって先端の再生処理が終了する。Next, as shown in FIG. 3, the rotary sample stage 3 is rotated in the direction of the arrow by the rotation drive control circuit 18 to move the probe electrode 13 above the electropolishing tank 6.
The probe electrode 13 is lowered by the coarse movement mechanism 10 and immersed approximately 1 mm below the liquid level in the electropolishing tank 6, and 30V is applied between the probe electrode 13 and the platinum electrode 5 by the electropolishing power supply circuit 23.
Electropolishing by etching is performed for several minutes by passing a moderate amount of alternating current. When bubble generation from the probe electrode 13 is finished, pull up the probe electrode 13, further rotate the rotary sample stage 3, and transfer the probe electrode 13 to the pure water cleaning tank 7.
, and are sequentially immersed in an ethanol cleaning tank 8 for cleaning. At this time, it is effective to move the probe electrode 13 in the X and Y directions with an appropriate amplitude using the three-dimensional piezo scanner 11, and this cleaning completes the regeneration process of the tip.
【００１４】処理されたプローブ電極１３は図４に示す
ように標準試料９の上方に移動され、そこで先述の動作
が行われ、標準試料９の原子配列像が得られるか否かに
よってその分解能が検査される。分解能が低い場合には
、再びエッチング、洗浄の再生処理が行われるが、実験
では１回又は２回の再生処理で十分であることが確認さ
れた。その後に、プローブ電極１３を試料４の上方に戻
して、トンネル電流増幅回路１６をプローブ電極１３に
接続し、再び測定を開始する。The processed probe electrode 13 is moved above the standard sample 9 as shown in FIG. be inspected. If the resolution is low, regeneration processing such as etching and cleaning is performed again, but experiments have confirmed that regeneration processing once or twice is sufficient. After that, the probe electrode 13 is returned above the sample 4, the tunnel current amplification circuit 16 is connected to the probe electrode 13, and measurement is started again.
【００１５】回転駆動制御機構２及び粗動機構１０を、
高精度光学式ロータリーエンコーダ、高精度軸受機構、
ステッピングモータとを組合わせて構成した場合に、回
転式試料ステージ３は±０．２秒の位置再現性が達成さ
れ、プローブ電極１３の試料４上の位置は水平方向で±
２μｍの位置再現性が達成される。従って、本実施例で
用いた三次元ピエゾスキャナ１１の最大走査幅が水平面
内で５μｍであることを考慮すると、測定中断前の観察
領域、或いはその非常に近傍の領域で測定を再開するこ
とが可能である。なお、試料ステージは回転式に限らず
、直線上を往復動するものであってもよい。[0015] The rotational drive control mechanism 2 and the coarse movement mechanism 10 are
High-precision optical rotary encoder, high-precision bearing mechanism,
When configured in combination with a stepping motor, the rotary sample stage 3 achieves a position repeatability of ±0.2 seconds, and the position of the probe electrode 13 on the sample 4 is within ±0.2 seconds in the horizontal direction.
A position repeatability of 2 μm is achieved. Therefore, considering that the maximum scanning width of the three-dimensional piezo scanner 11 used in this example is 5 μm in the horizontal plane, it is possible to restart the measurement in the observation area before the measurement was interrupted or in an area very close to it. It is possible. Note that the sample stage is not limited to a rotary type, but may be one that reciprocates in a straight line.
【００１６】プローブ保持管駆動機構１２及び粗動機構
１０は、例えば磁気式ロータリエンコーダ等の検出方法
、超音波モータ等の駆動方法を用いてもよく、試料ステ
ージ３は回転式でなく直進式でもよい。また、トンネル
電流増幅回路１６の接続、切断動作もＣＰＵ１５によっ
て行うと操作性が良い。The probe holding tube drive mechanism 12 and the coarse movement mechanism 10 may use a detection method such as a magnetic rotary encoder or a drive method such as an ultrasonic motor, and the sample stage 3 may be a linear type instead of a rotation type. good. Further, if the connection and disconnection operations of the tunnel current amplification circuit 16 are also performed by the CPU 15, operability is improved.
【００１７】プローブ電極１３はタングステンの他に白
金、白金−イリジウム、白金−ロジウム、或いは他の純
金属、合金でもよく、その材質によって電解研磨溶液条
件を変えればよい。また、標準試料９はＨＯＰＧの劈開
面を用いているが、プローブ電極１３の対称性評価のた
めにグレーディングサンプル併用等により複数の標準試
料を使用してもよい。The probe electrode 13 may be made of platinum, platinum-iridium, platinum-rhodium, or other pure metals or alloys in addition to tungsten, and the conditions of the electrolytic polishing solution may be changed depending on the material. Further, although the standard sample 9 uses a cleavage plane of HOPG, a plurality of standard samples may be used in combination with a grading sample to evaluate the symmetry of the probe electrode 13.
【００１８】[0018]
【発明の効果】以上説明したように本発明に係る走査型
トンネル顕微鏡は、試料を載置した可動式試料ステージ
上に載置された電界研磨槽、洗浄槽を移動して、劣化し
たプローブ電極の先端をエッチング、洗浄するので、再
生処理の操作性が良く、観察領域の再現性も良好である
。また、試料ステージ上に標準試料を載置して分解能検
査を行うことも可能である。Effects of the Invention As explained above, the scanning tunneling microscope according to the present invention removes deteriorated probe electrodes by moving the electropolishing tank and the cleaning tank placed on the movable sample stage on which the sample is placed. Since the tip of the probe is etched and cleaned, the operability of the regeneration process is good and the reproducibility of the observation area is also good. It is also possible to perform a resolution test by placing a standard sample on the sample stage.
【図１】実施例の斜視図である。FIG. 1 is a perspective view of an embodiment.
【図２】ブロック回路構成図である。FIG. 2 is a block circuit configuration diagram.
【図３】プローブ電極のエッチング方法の説明図である
。FIG. 3 is an explanatory diagram of a probe electrode etching method.
【図４】プローブ電極の分解能検査方法の説明図である
。FIG. 4 is an explanatory diagram of a probe electrode resolution testing method.
２ 回転駆動制御機構 ３ 回転式試料ステージ ４ 試料 ５ 白金電極 ６ 電界研磨槽 ７ 純水洗浄槽 ８ エタノール洗浄槽 ９ 標準試料 １０ 粗動機構 １１ 三次元ピエゾスキャナ １３ プローブ電極 １５ ＣＰＵ １６ トンネル電流増幅回路 １７ バイアス電圧発生回路 ２４ テレビモニタ 2 Rotation drive control mechanism 3 Rotating sample stage 4 Sample 5 Platinum electrode 6 Electric polishing tank 7 Pure water cleaning tank 8 Ethanol cleaning tank 9 Standard sample 10 Coarse movement mechanism 11 3D piezo scanner 13 Probe electrode 15 CPU 16 Tunnel current amplification circuit 17 Bias voltage generation circuit 24 TV monitor
Claims (2)
との間に電圧を印加して接近させ、流れるトンネル電流
を検流して試料面の表面を観察する走査型トンネル顕微
鏡において、前記試料ステージ上に配置した電界研磨槽
と、前記プローブ電極を電極とする電界研磨用電源回路
と、前記試料ステージ上に配置した洗浄槽と、前記試料
ステージ駆動機構とを備えたことを特徴とする走査型ト
ンネル顕微鏡。1. A scanning tunneling microscope in which a voltage is applied between a sample on a sample stage and a probe electrode to bring them close to each other, and a flowing tunnel current is galvanized to observe the surface of the sample surface. A scanning tunneling microscope characterized by comprising: an electropolishing tank arranged above, a power supply circuit for electropolishing using the probe electrode as an electrode, a cleaning tank arranged above the sample stage, and the sample stage drive mechanism. .
類の標準試料を配置した請求項１に記載の走査型トンネ
ル顕微鏡。2. The scanning tunneling microscope according to claim 1, wherein at least one type of standard sample is placed on the sample stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13827191A JPH04337402A (en) | 1991-05-13 | 1991-05-13 | Scanning type tunnel microscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13827191A JPH04337402A (en) | 1991-05-13 | 1991-05-13 | Scanning type tunnel microscope |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04337402A true JPH04337402A (en) | 1992-11-25 |
Family
ID=15218025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13827191A Pending JPH04337402A (en) | 1991-05-13 | 1991-05-13 | Scanning type tunnel microscope |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04337402A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0736746A1 (en) * | 1995-04-04 | 1996-10-09 | Ryoden Semiconductor System Engineering Corporation | Method of using scanning probe microscope permitting cleaning of probe microscope or of probe tip in ambient atmosphere |
| JP2002323429A (en) * | 2001-04-26 | 2002-11-08 | Seiko Instruments Inc | Scanning probe microscope |
| WO2006004064A1 (en) * | 2004-07-02 | 2006-01-12 | Honda Motor Co., Ltd. | Scanning probe microscope system |
-
1991
- 1991-05-13 JP JP13827191A patent/JPH04337402A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0736746A1 (en) * | 1995-04-04 | 1996-10-09 | Ryoden Semiconductor System Engineering Corporation | Method of using scanning probe microscope permitting cleaning of probe microscope or of probe tip in ambient atmosphere |
| US5652428A (en) * | 1995-04-04 | 1997-07-29 | Mitsubishi Denki Kabushiki Kaisha | Method of using scanning probe microscope allowing cleaning of probe tip in ambient atmosphere |
| JP2002323429A (en) * | 2001-04-26 | 2002-11-08 | Seiko Instruments Inc | Scanning probe microscope |
| JP4598300B2 (en) * | 2001-04-26 | 2010-12-15 | エスアイアイ・ナノテクノロジー株式会社 | Scanning probe microscope and physical property measurement method using the same |
| WO2006004064A1 (en) * | 2004-07-02 | 2006-01-12 | Honda Motor Co., Ltd. | Scanning probe microscope system |
| US7578853B2 (en) | 2004-07-02 | 2009-08-25 | Honda Motor Co., Ltd. | Scanning probe microscope system |
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