JPH0433330A - Vapor growth apparatus - Google Patents

Abstract

PURPOSE:To improve the uniformity in the film thickness of a grown thin film, by providing upper and lower two arrays or more of jetting holes provided in a gas introduction pipe which introduces a gas into a shower head. CONSTITUTION:An exhaust port 11a communicating with a vacuum exhaust means is provided in the lower part of a vacuum vessel 11. A heating stage 12 holds a wafer 1 horizontally and also heats it to a desired temperature. A shower head 13 supplies a source gas onto the whole surface of the wafer 1 from above vertically thereto. A large number of jetting holes 13a are provided in the bottom surface part of the shower head 13. A gas introduction pipe 14 is provided for introducing a source gas into the shower head 13 and one end thereof communicates with a gas supply source, while the other end projects inside the shower head 13 from the top part thereof in the direction vertical to the bottom surface thereof. On the lateral side of the projecting part into the shower head, two upper and lower jetting hole arrays 14aa each made up of eight jetting holes 14a arranged at equal intervals around the entire circumference in the same horizontal plane are provided, and the source gas is jetted therefrom radially toward the circular cone part of the shower head 13.

Description

[Detailed Description of the Invention] [Summary] Regarding a vapor phase growth apparatus, an object of the present invention is to provide a vapor phase growth apparatus capable of growing a thin film having a uniform thickness, and to supply gas to the surface of a substrate 1. Shower head 13 and gas to the shower head 13
The shower head 13 is a hollow body with a large number of jet holes 1 in its bottom surface.
3a, the gas introduction pipe 14 penetrates into the inside of the shower head 13 toward the bottom thereof, and a side surface of the shower head penetration part of the gas introduction pipe 14 has a wall of the shower head 13. It is configured to have a plurality of ejection hole rows 14aa in which a plurality of ejection holes 14a that eject gas toward the side surface are arranged in a line around the circumference.

[Industrial application field]

The present invention relates to a vapor phase growth apparatus used for manufacturing semiconductor devices and the like.

In the manufacturing process of semiconductor devices, a vapor phase growth method is often employed when forming various thin films such as a semiconductor film, an insulating film, and a metal film on the surface of a wafer. In this vapor phase growth method, the uniformity of source gas supply to the wafer surface determines the uniformity of the film quality and thickness of the grown thin film. In recent years, as wafer diameters have been increasing, there has been a desire to develop a vapor phase growth apparatus that can provide uniform source gas supply over a wide range.

[Conventional technology]

An example of a conventional vapor phase growth apparatus will be explained with reference to FIGS. 2 and 3. FIG. 2 is a schematic diagram showing an example of a conventional vapor phase growth apparatus. In the figure, 1 is a wafer (substrate) to be grown. Reference numeral 11 denotes a vacuum container, which has an exhaust port at its lower part that communicates with a vacuum exhaust means (not shown). A heating table 12 holds the wafer 1 and heats it to a desired temperature. Reference numeral 23 denotes a shower head for supplying source gas to the surface of the wafer 1, and is a hollow body having a substantially conical shape, and has a plurality of ejection holes 23a at its bottom.

24 is a gas introduction pipe for introducing source gas into the shower head 23, -1 communicates with a gas supply source (not shown), and the other end communicates with the shower head 23 at its top.

FIG. 3 is a schematic diagram showing another example of a conventional vapor phase growth apparatus. In the figure, 1 is a wafer (substrate) to be grown. 1
Reference numeral 1 denotes a vacuum container, which has an exhaust port at its lower part that communicates with a vacuum evacuation means (not shown). A heating table 12 holds the wafer 1 and heats it to a desired temperature.

Reference numeral 33 denotes a shower head for supplying source gas to the surface of the wafer 1, and is a hollow body having a substantially conical shape, and has a plurality of ejection holes 33a at its bottom. 34
is a gas introduction pipe for introducing source gas into the shower head 33, one end communicating with a gas supply source (not shown), and the other end penetrating into the shower head 33 from the top thereof. . Although the tip thereof is not open, a plurality of ejection holes 34a that eject source gas toward the conical surface of the shower head 33 are arranged on the side surface of the shower head penetrating portion in a line to form a single ejection hole. It forms a row shaft member.

[Problem to be solved by the invention]

However, in the vapor phase growth apparatus shown in FIG. 2 above, the flow velocity of the source gas ejected from the ejection hole at the bottom of the shower head is different from that from the ejection hole at the center of the bottom of the shower head, which is directly below the opening of the gas introduction tube. Therefore, there is a problem that the thickness of the thin film grown on the wafer surface becomes non-uniform. - On the other hand, in the device shown in Fig. 3 above, the gas flow is directed directly from the gas inlet pipe to the jet hole at the bottom of the shower head, thereby improving the non-uniformity of the flow velocity, but a high level of film thickness uniformity is required. There was a problem that it was still insufficient for various uses.

SUMMARY OF THE INVENTION An object of the present invention is to provide a vapor phase growth apparatus that can solve these problems and grow a thin film with uniform thickness.

[Means to solve the problem]

This purpose, according to the present invention, consists of a shower head 13 that supplies gas to the surface of the substrate 1;
The shower head 13 is a hollow body with a large number of jet holes 1 in its bottom surface.
3a, the gas introduction pipe 14 penetrates into the inside of the shower head 13 toward the bottom thereof, and a side surface of the shower head penetration part of the gas introduction pipe 14 has a wall of the shower head 13. By providing a vapor phase growth apparatus characterized by having a plurality of nozzle rows 14aa in which a plurality of nozzle holes 14a that eject gas toward the side surface are arranged in a single row around the circumference, achieved.

[Effect]

By having two or more rows of nozzle holes, one above the other, the flow of source gas inside the showerhead is more dispersed than when there are rows of nozzles, so the flow rate of the gas flow from the many nozzles provided on the bottom of the shower head is uniform. As a result, the thickness uniformity of the grown thin film is improved.

[Example] An example of a vapor phase growth apparatus based on the present invention will be described with reference to FIG. FIGS. 1(a) and 1(b) are schematic diagrams showing one embodiment of the present invention, in which (a) is a configuration diagram of main parts of the device, and (b) is a schematic diagram showing an embodiment of the present invention.
) is a perspective view of the gas introduction pipe. In the figure, 1 is a wafer (substrate) to be grown. Reference numeral 11 denotes a vacuum container, which has an exhaust port at its lower part that communicates with a vacuum exhaust means (not shown). A heating table 12 holds the wafer 1 horizontally and heats it to a desired temperature. Reference numeral 13 denotes a shower head for supplying source gas to the entire surface of the wafer 1 from above perpendicularly thereto, and is a hollow body having a substantially conical shape, the bottom surface of which faces the wafer 1 in parallel. This bottom portion has a large number of ejection holes 13a. 14 is a gas introduction pipe for introducing source gas into the shower head 13 from a gas supply source (not shown), and is a pipe with a circular cross section, one end communicating with the gas supply source and the other end communicating with the shower head 13. It penetrates into the inside of the spatula 13 from the top in a direction perpendicular to its bottom surface. Although its tip is not open, there is a spout hole 14a on the side of the shower head penetration part.
Eight ejection hole rows 14aa are provided on the upper and lower sides, which are arranged at equal intervals around the same horizontal plane in a row, and source gas is ejected radially from there toward the conical surface portion of the shower head 13. do. Note that the position of the gas introduction pipe 14 can be changed in the vertical direction.

As a result of growing a silicon film on a 100 mm diameter wafer using the above-mentioned apparatus, the in-plane film thickness distribution was ±1.0 to 2.2.
A good result of % was obtained. Incidentally, when a silicon film was grown under the same conditions using the apparatus shown in FIG. 3, the in-plane film thickness distribution was ±6.8 to 10.6%.

The present invention is not limited to the above embodiments, but can be implemented with various modifications. For example, the nozzle rows 14aa may be provided on two or more sides, the number of nozzles 14a constituting one nozzle hole row 14aa may be changed, or nozzle holes 14a that do not form the nozzle hole row 14aa may be added. good. It goes without saying that the present invention can also be applied to devices for purposes other than semiconductor device manufacturing.

[Effects of the Invention] As explained above, according to the present invention, it is possible to provide a vapor phase growth apparatus capable of growing a thin film with a uniform thickness. This is a major contribution.

[Brief explanation of the drawing]

FIGS. 1(a) and (b) are schematic diagrams showing one embodiment of the present invention. FIG. 2 is a schematic diagram showing an example of a conventional vapor phase growth apparatus. FIG. 3 is a schematic diagram showing an example of a conventional vapor phase growth apparatus. FIG. 2 is a schematic diagram showing an example. In the figure, 1 is a wafer (substrate), 13.23.33 is a shower head, 13a, 23a, 33a are ejection holes, 14.24.34 is a gas introduction pipe, 14a, 34a are ejection holes, 14aa is paulownia moss A row of blowholes. (α) Configuration diagram of the equipment section (b) Perspective view of waste introduction 4 An embodiment of the present invention? Membrane type diagram shown in Figure 1

Claims (1)

[Claims] A shower head (1) that supplies gas to the surface of a substrate (1).
3) and a gas introduction pipe (14) for introducing gas into the shower head (13), the shower head (13) is a hollow body and has a number of ejection holes (13a) in its bottom surface. The gas introduction pipe (14) penetrates into the shower head (13) toward the bottom thereof, and the gas introduction pipe (14) penetrates into the shower head on the side surface of the part where the shower head penetrates. indicates that the shower head (13) has a plurality of nozzle rows (14aa) in which a plurality of nozzle holes (14a) that eject gas toward the side surface are arranged in a row around the same time. Characteristic vapor phase growth equipment.