JPH04331390A - Electron beam tester - Google Patents
Electron beam testerInfo
- Publication number
- JPH04331390A JPH04331390A JP3108791A JP10879191A JPH04331390A JP H04331390 A JPH04331390 A JP H04331390A JP 3108791 A JP3108791 A JP 3108791A JP 10879191 A JP10879191 A JP 10879191A JP H04331390 A JPH04331390 A JP H04331390A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- electron beam
- electrons
- electrode
- filament electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 21
- 230000003287 optical effect Effects 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims 2
- 230000003472 neutralizing effect Effects 0.000 abstract description 3
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 230000001133 acceleration Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、試料の電位変化を試験
する電子ビームテスタに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam tester for testing potential changes in a sample.
【0002】0002
【従来の技術】電子ビームテスタは、LSIチップ内部
の電位変化を電位コントラスト像あるいは電位波形とし
て観察することができるものである。従来の電子ビーム
テスタでは、LSIに照射する電子の加速電圧が1kV
付近で可変するのみであった。2. Description of the Related Art An electron beam tester is capable of observing potential changes inside an LSI chip as a potential contrast image or a potential waveform. In conventional electron beam testers, the acceleration voltage of electrons irradiated onto LSI is 1kV.
It only varied in the vicinity.
【0003】0003
【発明が解決しようとする課題】従来の電子ビームテス
タでは、絶縁膜付きの試料を試験する場合、電子が絶縁
膜中あるいは絶縁膜の表面上に捕獲されたとき、又は二
次電子の放出過剰になったときに、二次電子像のコント
ラストの低下及び画質の低下の問題が起る。[Problems to be Solved by the Invention] When testing a sample with an insulating film, the conventional electron beam tester detects problems when electrons are captured in the insulating film or on the surface of the insulating film, or when excessive secondary electrons are emitted. When this happens, problems arise in which the contrast and image quality of the secondary electron image deteriorate.
【0004】また二次電子像の画質低下を防ぐために、
一次電子の加速電圧を1kV付近で可変にして対処して
いるが、可変幅の制限により対応できない試料があると
いう問題がある。[0004] Also, in order to prevent deterioration in the quality of secondary electron images,
This has been addressed by making the primary electron acceleration voltage variable around 1 kV, but there is a problem in that some samples cannot be accommodated due to limitations in the variable range.
【0005】本発明の目的は、二次電子像のコントラス
ト低下を防止した電子ビームテスタを提供することにあ
る。An object of the present invention is to provide an electron beam tester that prevents a decrease in the contrast of a secondary electron image.
【0006】[0006]
【課題を解決するための手段】前記目的を達成するため
、本発明に係る電子ビームテスタにおいては、電子ビー
ム光学系と、フィラメント電極とを有する電子ビームテ
スタであって、電子ビーム光学系は、試料室内の試料に
電子ビームを照射するものであり、フィラメント電極は
、試料室内の試料の近傍に設置され、試料が正或いは負
に帯電したときに電子をそれぞれ供給あるいは吸入する
ことにより帯電を中和するものである。Means for Solving the Problems In order to achieve the above object, an electron beam tester according to the present invention includes an electron beam optical system and a filament electrode, the electron beam optical system comprising: A filament electrode is installed near the sample in the sample chamber, and when the sample is positively or negatively charged, it neutralizes the charge by supplying or inhaling electrons, respectively. It is something that brings peace.
【0007】[0007]
【作用】本発明に係る電子ビームテスタの試料室におい
て、試料の上部近傍に、試料に電子の供給あるいは吸入
を行うフィラメント電極を備え、これを用いて、試料が
正あるいは負に帯電したときに、電子をそれぞれ供給あ
るいは、吸出することにより、帯電を中和し、二次電子
画像のコントラスト低下を回復させるものである。[Operation] In the sample chamber of the electron beam tester according to the present invention, a filament electrode is provided near the top of the sample for supplying or inhaling electrons to the sample. By supplying or sucking out electrons, respectively, the charge is neutralized and the contrast reduction in the secondary electron image is recovered.
【0008】[0008]
【実施例】以下、本発明の一実施例を図により説明する
。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
【0009】図1は、本発明の一実施例を示す構成図で
ある。FIG. 1 is a block diagram showing an embodiment of the present invention.
【0010】図において、電子銃1と試料室内の試料と
の間に形成される電子ビーム9の光路中に、電子銃1,
偏向子2,アパーチャー3,レンズ4,スキャンコイル
5を設置する。これらの電子ビーム光学系は従来と同じ
である。また、8は試料7の電圧変化を検出する検出器
である。In the figure, an electron gun 1,
A deflector 2, an aperture 3, a lens 4, and a scan coil 5 are installed. These electron beam optical systems are the same as conventional ones. Further, 8 is a detector for detecting voltage changes of the sample 7.
【0011】本発明は、試料室内の試料7の上方近傍に
フィラメント電極6を設けたものであり、フィラメント
電極6は、試料7に電子の供給あるいは試料7から電子
の吸入を行うものである。In the present invention, a filament electrode 6 is provided near the upper part of the sample 7 in the sample chamber, and the filament electrode 6 supplies electrons to the sample 7 or sucks electrons from the sample 7.
【0012】電子ビーム9を当てて、試料7の表面にあ
る絶縁膜が正に帯電したら、フィラメント電極6に適当
な加速電圧を与えて電子をその絶縁膜に供給して中和し
、低下した画質を回復させる。When the insulating film on the surface of the sample 7 becomes positively charged by applying the electron beam 9, an appropriate accelerating voltage is applied to the filament electrode 6 to supply electrons to the insulating film, neutralizing it and lowering the charge. Restore image quality.
【0013】一方、試料7の表面の絶縁膜上に過剰の電
子が捕獲された場合は、フィラメント電極6に適当な正
電圧を印加することにより、過剰な電子を吸引すること
により中和し、低下した画質を回復させる。On the other hand, if excessive electrons are captured on the insulating film on the surface of the sample 7, applying an appropriate positive voltage to the filament electrode 6 attracts and neutralizes the excess electrons. Recover degraded image quality.
【0014】[0014]
【発明の効果】以上説明したように本発明の電子ビーム
テスタは、試料上方近傍にフィラメント電極を設け、そ
の印加電圧を調整することにより、試料が正あるいは負
に帯電したものを中和して二次電子画像のコントラスト
低下を防止することができる。また、フィラメント電極
が試料近傍にあるため、フィラメント電極の電圧を余り
大きくする必要がなく、従って、フィラメント電極の応
答を速くすることができる場合があり、このときは電子
ビームのブランキングの途中にも実行できるという効果
がある。[Effects of the Invention] As explained above, the electron beam tester of the present invention neutralizes positively or negatively charged samples by providing a filament electrode near the top of the sample and adjusting the applied voltage. Deterioration in contrast of secondary electron images can be prevented. In addition, since the filament electrode is located near the sample, there is no need to increase the voltage of the filament electrode so much that the response of the filament electrode can be made faster. The effect is that it can also be executed.
【図1】本発明の一実施例を示す構成図である。FIG. 1 is a configuration diagram showing an embodiment of the present invention.
1 電子銃 2 偏向子 3 アパーチャー 4 レンズ 5 スキャンコイル 6 フィラメント電極 7 試料 8 検出器 9 電子ビーム 1 Electron gun 2. Deflector 3 Aperture 4 Lens 5 Scan coil 6 Filament electrode 7 Sample 8 Detector 9 Electron beam
Claims (1)
極とを有する電子ビームテスタであって、電子ビーム光
学系は、試料室内の試料に電子ビームを照射するもので
あり、フィラメント電極は、試料室内の試料の近傍に設
置され、試料が正あるいは負に帯電したときに電子をそ
れぞれ供給あるいは吸入することにより帯電を中和する
ものであることを特徴とする電子ビームテスタ。1. An electron beam tester comprising an electron beam optical system and a filament electrode, the electron beam optical system irradiating an electron beam onto a sample in a sample chamber, and the filament electrode irradiating a sample in a sample chamber with an electron beam. 1. An electron beam tester that is installed near a sample and neutralizes the charge by supplying or inhaling electrons when the sample is positively or negatively charged.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3108791A JPH04331390A (en) | 1991-04-12 | 1991-04-12 | Electron beam tester |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3108791A JPH04331390A (en) | 1991-04-12 | 1991-04-12 | Electron beam tester |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04331390A true JPH04331390A (en) | 1992-11-19 |
Family
ID=14493574
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3108791A Pending JPH04331390A (en) | 1991-04-12 | 1991-04-12 | Electron beam tester |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04331390A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1296352A1 (en) * | 2000-06-27 | 2003-03-26 | Ebara Corporation | Charged particle beam inspection apparatus and method for fabricating device using that inspection apparatus |
-
1991
- 1991-04-12 JP JP3108791A patent/JPH04331390A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1296352A1 (en) * | 2000-06-27 | 2003-03-26 | Ebara Corporation | Charged particle beam inspection apparatus and method for fabricating device using that inspection apparatus |
EP1296352A4 (en) * | 2000-06-27 | 2007-04-18 | Ebara Corp | Charged particle beam inspection apparatus and method for fabricating device using that inspection apparatus |
US7241993B2 (en) | 2000-06-27 | 2007-07-10 | Ebara Corporation | Inspection system by charged particle beam and method of manufacturing devices using the system |
US7411191B2 (en) | 2000-06-27 | 2008-08-12 | Ebara Corporation | Inspection system by charged particle beam and method of manufacturing devices using the system |
US8053726B2 (en) | 2000-06-27 | 2011-11-08 | Ebara Corporation | Inspection system by charged particle beam and method of manufacturing devices using the system |
US8368031B2 (en) | 2000-06-27 | 2013-02-05 | Ebara Corporation | Inspection system by charged particle beam and method of manufacturing devices using the system |
US8803103B2 (en) | 2000-06-27 | 2014-08-12 | Ebara Corporation | Inspection system by charged particle beam and method of manufacturing devices using the system |
US9368314B2 (en) | 2000-06-27 | 2016-06-14 | Ebara Corporation | Inspection system by charged particle beam and method of manufacturing devices using the system |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR930007369B1 (en) | Focused ion beam processing | |
JP4996805B2 (en) | Semiconductor wafer and mask inspection apparatus using a low energy electron microscope having two illumination beams | |
US7507959B2 (en) | Method for charging substrate to a potential | |
JPH0286036A (en) | Ion micro-analyzer | |
JPH10125271A (en) | Scanning electron microscope | |
US4748325A (en) | Method and device to discharge samples of insulating material during ion analysis | |
JPH04331390A (en) | Electron beam tester | |
US4743757A (en) | Secondary electron emission control in electron microscopes | |
JP3711244B2 (en) | Wafer inspection system | |
US4777369A (en) | Electron beam lithographic method | |
JP2001035769A (en) | Pattern formation and charged particle beam exposure system | |
JP3014986B2 (en) | Scanning electron microscope | |
JP2001006605A (en) | Focusing ion beam processing device and processing method for specimen using focusing ion beam | |
JPH07296759A (en) | Observing method of semiconductor element, and scanning electron microscope used therefor | |
JPH07312198A (en) | Focusing ion beam device | |
JPS63141247A (en) | Ion beam device | |
JPH0135340B2 (en) | ||
JPS60121654A (en) | Ion microbeam device | |
JP2655513B2 (en) | Electron beam exposure equipment | |
JP2564115B2 (en) | Wafer charge suppression device | |
JPS63266751A (en) | Electrostatic correction flight time type secondary ion microscope | |
JPS59171444A (en) | Ion beam application apparatus | |
US4663572A (en) | Process for suppressing electron beam drift phenomenon in a cathode ray tube | |
JP2006349384A (en) | Photoemission electron microscope suppressing charging or potential strain of insulator sample, and sample observation method | |
JPH0668832A (en) | Scanning electron microscope |