JPH04330743A - Apparatus and method for manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To previously perform the retrieval treatment of the position of a pad electrode outside a wiring treatment region, to perform a pad positioning operation with good accuracy on the basis of its retrieval result and to enhance the production yield of a semiconductor device whose density and integartion are made high especially in a wire-bonder for a bonded semiconductor chip. CONSTITUTION:The title apparatus is provided with the following: an image acquisition means 11 which acquires the arrangement image of a semiconductor device 17 and which outputs an arrangement image data D; a storage means 12 which stores said arrangement image data D; a wiring and bonding means 13 which wires and connects said semiconductor device 17; and a control means 14 which controls the input/output operation of said image acquisition means 11, said storage means 12 and said wiring and bonding means 13. The title apparatus is constituted so as to include that said image acquisition means 11 is installed outside the drive part of the wiring and bonding means 13. The title apparatus is constituted so as to include that said control means 14 performs an alignment operation on the basis of the arrangement image data D and that a movement means 15 and a heating means 16 are installed in the said apparatus.

Description

[Detailed description of the invention]

[Table of Contents] Industrial applications Conventional technology (Figure 6) Problems that the invention aims to solve Means to solve the problem (Figure 1, Figure 2) Action Examples (Figures 3 to 5) Effect of the invention

0002

[Field of Industrial Application] The present invention relates to a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method, and more specifically, to an apparatus for attaching wires between pad electrodes of die-bonded semiconductor chips and lead frames. The present invention also relates to a pad positioning method at that time.

In recent years, semiconductor integrated circuit devices (hereinafter simply LS
With the increase in density and integration, the number of pad electrodes installed on a semiconductor chip tends to increase and the area of the electrodes tends to decrease.

By the way, according to the conventional example, when attaching wires between the pad electrodes of a die-bonded semiconductor chip and a lead frame, the pad electrodes are searched by a camera system attached to the wire bonder, and the pad electrodes are searched for in a heated atmosphere. The semiconductor chip and the wire bonder are aligned.

[0005] Therefore, during positioning, haze has an adverse effect on the camera system, causing deterioration in positioning accuracy.

Furthermore, the weight of the drive section of the wire bonder increases, making it difficult to quickly stabilize the tip of the capillary at the point to be connected.

[0007] Therefore, a search process for pad electrode positions is performed in advance in areas other than the wire attachment process area, and pad positioning is performed with high precision based on the search results, thereby improving the production yield of semiconductor devices that are becoming more dense and highly integrated. A device and method that can do this are desired.

[0008]

2. Description of the Related Art FIG. 6 shows a configuration diagram of a conventional wire bonding apparatus.

In FIG. 6, the devices for attaching wires to the pad electrodes of the die-bonded semiconductor chip 7B and the lead frame 7A include a camera system 1, a wire bonder 2, a driving device 3, a lead frame feeding device 4, and a control device 5. and a heater block 6.

The function of this device is that, in a pre-processing process in which a semiconductor chip 7B incorporating an integrated circuit or the like is packaged, a lead frame 7A to which the semiconductor chip 7B is die-bonded is sequentially fed by a lead frame feeding device 4. Further, the lead frame 7A and the pad electrode of the semiconductor chip 7B are wired with gold wire (hereinafter also simply referred to as wire).
Wiring connection is made by a wire bonder 2, etc. At this time, the semiconductor chip 7B is heated by the heater block 6 30
It is heated to about 0 [°C].

[0011] Also, the semiconductor chip 7B and the wire bonder 2
The alignment with the wire bonder 2 is performed based on the camera system 1 attached to the wire bonder 2. For example, a connection point such as a pad electrode of the semiconductor chip 7B and a wire bonder 2
To align the capillary with the capillary that discharges the gold wire, etc., first, the camera system 1 recognizes that the semiconductor chip 7B has arrived directly under the wire bonder 2, and then searches for the pad electrode. The tip of the capillary is moved by the drive device 3 to a connection point (lead frame 7A or pad electrode) where a gold wire or the like is wired.

As a result, in the aligned state, the pad electrodes of the semiconductor chip 7B and the lead frame 7
A is wired.

[0013]

According to the conventional example, a camera system 1 for searching (recognizing) pad electrodes is attached to a wire bonder 2. Further, the alignment between the semiconductor chip 7B and the wire bonder 2 is performed in a heated atmosphere.

[0014] For this reason, the connection point for wiring the wire and the connection point for pad positioning must be performed in the same processing area. Therefore, during positioning, haze caused by the heater block 6 has an adverse effect on the camera system 1, for example, reduces resolution due to poor imaging, resulting in deterioration of positioning accuracy.

Furthermore, since the camera system 1 is mounted on the bonding head, the weight of the drive unit increases, and the inertial load on the drive unit 3 increases, making it difficult to quickly stabilize the tip of the capillary at the point to be connected. .

[0016] As a result, as LSIs become more highly integrated, it is increasingly required to reduce the area of pad electrodes and increase the number of pads. There is a problem in that it causes a decrease in the production yield of semiconductor devices.

The present invention was created in view of the problems of the prior art, and instead of performing wire attachment processing and positioning processing in the same processing area, the pad electrode position is searched in advance in a region other than the wire attachment processing area. A semiconductor device manufacturing apparatus and a semiconductor device manufacturing method that enable accurate pad positioning based on the search results and improve the production yield of semiconductor devices that are becoming increasingly dense and highly integrated. For the purpose of providing.

[0018]

[Means for Solving the Problems] FIG. 1 is a diagram showing the principle of a semiconductor device manufacturing apparatus according to the present invention, and FIG. 2 is a diagram showing the principle of a semiconductor device manufacturing method according to the present invention.

As shown in FIG. 1, the semiconductor device manufacturing apparatus of the present invention includes image acquisition means 11 for acquiring a layout image of a semiconductor device 17 and outputting layout image data D, and storing the layout image data D. It comprises a storage means 12, a wiring joining means 13 for connecting the wiring of the semiconductor device 17, and a control means 14 for controlling the input/output of the image acquisition means 11, the storage means 12, and the wiring joining means 13. The present invention is characterized in that the acquisition means 11 is provided at a location other than the driving section of the wiring joining means 13.

[0020] In the above device, the control means 1
4 is characterized in that the wiring bonding means 13 is aligned with the semiconductor device 17 based on the arrangement image data D. Furthermore, in the apparatus, a moving means 15 moves the semiconductor device 17 from the image acquisition processing area A1 to the wiring bonding processing area A2, and a heating unit heats the semiconductor device 17 in the wiring bonding processing area A2. 1
6 is provided.

Further, in the method for manufacturing a semiconductor device of the present invention, as shown in the flowchart of FIG. 2(b), in step P1, the semiconductor device 1 is
7 is performed, and then, in step P2, wiring bonding processing for the semiconductor device 17 is performed based on the acquisition process. The method described above is characterized in that the semiconductor device 17 and the wiring bonding means 13 are aligned based on the arrangement image data D of the semiconductor device 17 stored by the acquisition process, thereby achieving the above object.

[0022]

[Operation] According to the semiconductor device manufacturing apparatus of the present invention, FIG.
As shown in FIG. 2, an image acquisition means 11, a storage means 12, a wiring joining means 13, and a control means 14 are provided, and the image acquisition means 11 is provided other than the drive section of the wiring joining means 13.

For example, the image acquisition means 11 is fixed at a position (image acquisition processing region A1) that is not affected by haze or the like caused by the heating means 16 other than the wiring bonding processing region A2 of the semiconductor device 17. Therefore, when the layout image of the semiconductor device 17 required for pad positioning is acquired in the image acquisition processing area A1, the layout image data D is transferred to the image acquisition means 1.
1 to the storage means 12, and the arranged image data D is stored therein.

Therefore, the semiconductor device 17 is transferred to the moving means 15.
From the image acquisition processing area A1 to the wiring joining processing area A2
When the wire bonding means 13 and the semiconductor device 17 are moved to the processing area A2, the control means 14 can automatically align the wiring joining means 13 and the semiconductor device 17 based on the arrangement image data D.

[0025] Further, the image acquisition means 11 is connected to the wiring joining means 1.
3, the weight of the drive unit can be reduced. This reduces the inertial load on the drive device that drives the bonding head and the like, making it possible to quickly and stably move the tip of the capillary or the like of the wiring bonding means 13 to the point to be connected.

[0026] This makes it possible to speed up the bonding process even when it is required to reduce the area of pad electrodes and increase the number of pads due to higher integration of LSIs.

Further, according to the method of manufacturing a semiconductor device of the present invention, as shown in the flowchart of FIG. 2(b), in advance,
In step P1, an arrangement image of the semiconductor device 17 is acquired in a region other than the wiring bonding processing area A1, and then in step P2, the wiring bonding process of the semiconductor device 17 is performed based on the acquisition process.

Therefore, unlike the conventional example, the wiring bonding process for wiring wires such as gold wires and the search process for the connected point p for pad positioning are not performed in the same processing area (
(See Figure 2(a)). Therefore, since the pad positioning process is performed based on the previously acquired arrangement image data D of the semiconductor device 17, the pad positioning process is not affected by haze caused by heat treatment as in the conventional example. This makes it possible to avoid a decrease in resolution due to poor imaging or the like.

[0029] This improves the alignment accuracy, making it possible to improve the production yield of semiconductor devices that are becoming more dense and highly integrated.

[0030]

Embodiments Next, embodiments of the present invention will be described with reference to the drawings. 3 to 5 are diagrams for explaining a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method according to an embodiment of the present invention, and FIG. 3 shows a configuration diagram of a wire bonding apparatus according to an embodiment of the present invention. ing.

In FIG. 3, the pad electrodes of the die-bonded semiconductor chip 27B and the lead frame 27
The device for attaching wires to A is the camera system 21,
Image memory 22, wire bonder 23A, drive device 23B
, a lead frame feeding device 24, a control device 25, and a heater block 26.

That is, the camera system 21 is an embodiment of the image acquisition means 11, and acquires an arrangement image of the semiconductor chip 27B die-bonded to the lead frame 27A, which is an example of the semiconductor device 17, and generates arrangement image data D. This is what is output. Note that the camera system 21 is provided at a location other than the drive section of the wire bonder 23A. For example, the camera system 21 is fixed at a position where it is not affected by heat haze or the like caused by the heater block 26.

The image memory 22 is an embodiment of the storage means 12, and stores the layout image data D. The arrangement image data D is used for calculating the positional relationship between the bonding pad position coordinates and the recognition point coordinates set in advance.

The wire bonder 23A and the drive device 23B are an embodiment of the wiring bonding means 13, and are used to wire (wire connect) the pad electrodes of the die-bonded semiconductor chip 27B and the lead frame 27A. For example, the wires between the two are connected using a gold wire or the like using an ultrasonic thermocompression bonding method.

The control device 24 is an embodiment of the control means 14, and controls the input/output of the camera system 21, the image memory 21, the drive device 23B of the wire bonder 23A, the lead frame feeding device 25, and the heater block 26. . For example, the control device 24 connects the capillary of the wire bonder 23A to the semiconductor chip 2 based on the placement image data D.
Align with the pad electrode of 7B.

The lead frame feeding device 25 is the moving means 1
5, in which a dice-bonded semiconductor chip 27B is moved from an image acquisition processing area A1 to a wiring bonding processing area A2. Note that the image acquisition processing area A1 is a peripheral area where the camera system 21 is fixed, and is a processing area for acquiring an arrangement image of the semiconductor chip 27B. Further, the wiring bonding processing area A2 is provided with a wire bonder 2.
3A and the peripheral area where the heater block 26 is provided,
This is a processing area where the semiconductor chip 27B is wire-bonded in a heated atmosphere (see FIG. 5(a)).

The heater block 26 is an embodiment of the heating means 16, and heats the semiconductor chip 27B dice-bonded in the wiring bonding processing area A2 to 300[°C].
It is heated to a certain degree.

In this way, according to the wire bonding apparatus according to the embodiment of the present invention, as shown in FIG.
, a driving device 23B, and a control device 24, and the camera system 21 is located at a position (
It is fixed to the image acquisition processing area A1).

For this reason, the layout image of the semiconductor chip 27B is acquired in advance in the image acquisition processing area A1 other than the wiring bonding processing area A2. The arrangement image data D is output from the camera system 21 to the image memory 21, and the arrangement image data D is stored.

With this, when the semiconductor chip 27B is moved from the image acquisition processing area A1 to the wiring bonding processing area A2 by the lead frame feeding device 25, the processing area A2
In this step, the control device 24 can automatically align the tip of the capillary of the wire bonder 23A and the semiconductor chip 27B based on the placement image data D.

Furthermore, since the camera system 21 is removed from the wire bonding head compared to the conventional example, the weight of the driving section can be reduced. With this,
The inertial load on the drive device 23B that drives the bonding head etc. is reduced, making it possible to quickly and stably move the tip of the capillary etc. of the wire bonder 23A to the point to be connected.

This makes it possible to speed up the bonding process even when it is required to reduce the area of pad electrodes and increase the number of pads due to higher integration of LSIs.

Next, a wire bonding method according to an embodiment of the present invention will be explained with supplementary explanation of the operation of the apparatus.

FIG. 4 is a flow chart of a wire bonding method according to an embodiment of the present invention, and FIG. 5 shows a supplementary forming process diagram.

For example, when a plurality of semiconductor chips 27B (hereinafter referred to as ■ to ■) die-bonded to a lead frame 27A as shown in FIG. 5 are sequentially moved at a predetermined movement pitch, in the flowchart of FIG. , In step P1, an arrangement image of the semiconductor chip (2) is acquired in the image acquisition processing area A1. At this time, an arrangement image of the pad electrodes and the like provided on the semiconductor chip (2) (on the island) is acquired by the camera system 21, and the arrangement image data D1 is stored in the image memory 22. Furthermore, when the image acquisition process is completed, the semiconductor chip
5, and it is moved from the image acquisition processing area A1 to the wiring joining processing area A2 (FIGS. 5(a) and 5(b)).
reference).

Next, in step P2, the wiring bonding processing area A
In step 2, the wiring bonding process for the semiconductor chip (2) is performed. At this time, the control device 24 connects the tip of the capillary of the wire bonder 23A to the semiconductor chip 2 based on the arrangement image data D1.
Align with the pad electrode. Here, the control device 2 uses the placement image data D from the positional relationship between the bonding pad position coordinates and the recognition point coordinates set in advance.
4 performs arithmetic processing such as the amount of positional deviation, for example, the reference position (home position) of the tip of the capillary and the feed device 25.
Pad positioning processing is performed based on the offset amount. As a result, the pad electrodes of the semiconductor chip (1) and the lead frame 27A are wired (ultrasonic thermocompression connection) using the gold wire 27C in a heated atmosphere of 300°C (see FIG. 5(b)).

At the same time, in step P3, an arrangement image of the semiconductor chip (2) is acquired. At this time, the semiconductor chip ■
An arrangement image of pad electrode positions, etc. is acquired by the camera system 21, and the arrangement image data D2 is stored in the image memory 2.
2. Further, when the image acquisition process is completed, the semiconductor chip (2) is moved by a predetermined movement pitch by the lead frame feeding device 25, and it is moved to the image acquisition processing area A1.
to the wiring bonding processing area A2 (FIG. 5(a),
(see (b)).

Thereafter, in step P4, wiring bonding processing for the semiconductor chip (2) is performed in the wiring bonding processing area A2. At the same time, in step P5, an arrangement image of the semiconductor chip (2) is acquired. (See Figure 5(c)).

By repeating these processes, the semiconductor chips 1 to 2 are sequentially moved at a predetermined movement pitch.
■ Gold wire 27C on pad electrode and lead frame 27A
It is possible to perform wire attachment processing such as

In this manner, according to the wire bonding method according to the embodiment of the present invention, as shown in the flow chart of FIG. At step A1, an image of the semiconductor chip 27B is acquired, and then at steps P2, P4...Pn, the semiconductor chip 27B is acquired based on the acquisition process.
7B wiring bonding process.

For this reason, the wiring bonding process for wiring wires such as gold wires and the search process for connected points for positioning pads are not performed in the same processing area as in the conventional example. Therefore, since the pad positioning process is performed based on the previously acquired arrangement image data D of the semiconductor chip 27B, the pad positioning process is not affected by heat haze caused by the heater block 26 as in the conventional example. This makes it possible to avoid a decrease in resolution due to poor imaging or the like.

[0052] This improves the alignment accuracy, making it possible to improve the production yield of high-density, highly integrated semiconductor devices.

[0053]

[Effects of the Invention] As explained above, the apparatus of the present invention is equipped with an image acquisition means, a storage means, a wiring joining means, and a control means, and the image acquisition means is provided in a part other than the driving part of the wiring joining means. , arrangement image data is acquired in the image acquisition processing area.

Therefore, when the semiconductor device is moved from the image acquisition processing area to the wiring bonding processing area, it becomes possible to automatically align the wiring bonding means and the semiconductor device based on the layout image data. Furthermore, since the image acquisition means is removed from the wiring joining means, the weight of the driving section can be reduced. This makes it possible to quickly and stably move the wiring bonding means to the point to be connected.

Further, according to the method of manufacturing a semiconductor device of the present invention, the process of acquiring the arrangement image of the semiconductor device is performed in a region other than the wiring bonding processing area, and then the wiring bonding process of the semiconductor device is performed.

Therefore, since the pad positioning process is performed based on the previously acquired layout image data of the semiconductor device, the pad positioning process is not affected by heat haze caused by heat treatment as in the conventional example. This allows highly accurate pad positioning.

[0057] This improves alignment accuracy, making it possible to improve the production yield of semiconductor devices that are becoming increasingly dense and highly integrated, and to speed up the bonding process.

[Brief explanation of drawings]

FIG. 1 is a principle diagram of a semiconductor device manufacturing apparatus according to the present invention.

FIG. 2 is a principle diagram of a method for manufacturing a semiconductor device according to the present invention.

FIG. 3 is a configuration diagram of a wire bonding apparatus according to an embodiment of the present invention.

FIG. 4 is a flowchart of a wire bonding method according to an embodiment of the present invention.

FIG. 5 is a forming process diagram supplementing a flowchart according to an embodiment of the present invention.

FIG. 6 is a configuration diagram of a conventional wire bonding apparatus.

[Explanation of symbols]

11...image acquisition means, 12...Storage means, 13...wiring bonding means, 14...control means, 15... Means of transportation, 16...Heating means, D... arrangement image data, A1...image acquisition processing area, A2...Wiring bonding processing area.

Claims (5)

[Claims] 1. Image acquisition means (1) for acquiring a layout image of a semiconductor device (17) and outputting layout image data (D).
1), storage means (12) for storing the arrangement image data (D), wiring connection means (13) for wiring connection of the semiconductor device (17), and image acquisition means (11),
It comprises a storage means (12) and a control means (14) for controlling input/output of the wiring joining means (13), and the image acquisition means (11) is provided in a part other than the driving part of the wiring joining means (13). 1. A semiconductor device manufacturing apparatus characterized by: 2. The semiconductor device manufacturing apparatus according to claim 1, wherein the control means (14) controls the arrangement image data (D
) based on the wiring bonding means (13) and the semiconductor device (17).
) A semiconductor device manufacturing apparatus characterized by aligning the semiconductor device. 3. The semiconductor device manufacturing apparatus according to claim 1, wherein the semiconductor device (17) is moved from an image acquisition processing area (A1) to a wiring bonding processing area (A2). An apparatus for manufacturing a semiconductor device, comprising: means (15); and heating means (16) for heating the semiconductor device (17) in the wiring bonding processing area (A2). 4. The method is characterized in that an arrangement image of the semiconductor device (17) is acquired in advance in a region other than the wiring bonding processing area (A2), and the wiring bonding process of the semiconductor device (17) is performed based on the acquisition process. A method for manufacturing a semiconductor device. 5. The method of manufacturing a semiconductor device according to claim 4, wherein the semiconductor device (
17) Based on the layout image data (D) of the semiconductor device (
17) and a wiring bonding means (13).