JPH0432764Y2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an infrared detection device, and particularly to an infrared detection device that integrates an infrared detection element and a circuit for processing an output signal of the detection element.

Multicomponent semiconductors having a narrow energy gap, such as indium antimonide (InSb) and mercury-cadmium-tellurium (Hgl-xCdxTe), are usually used as constituent materials for semiconductor infrared sensing elements. These multi-component semiconductors generally have significantly different physicochemical and electrical properties from silicon (Si), so infrared sensing elements and peripheral circuit elements (e.g. transistors, resistors, etc.) can be placed on the same multi-component semiconductor substrate. It is difficult to accumulate.
On the other hand, a photoelectric conversion device in which a photoelectric conversion element, a transistor, etc. are integrated in a single silicon substrate is already well-known, but because silicon has a wide energy gap, the photoelectric conversion device uses mid-infrared radiation or longer wavelength radiation. There is no sensitivity to

In an attempt to mount an infrared sensing element and an external circuit as closely as possible, according to Utility Model Publication No. 15737/1987, an integrated circuit element was fixed inside a cooler housing an infrared sensing element, and wired to the infrared sensing element inside the cooler. An infrared detection device with a structure that performs the following has been proposed. However, this detection device is intended for infrared detection devices of a type that is cooled with a liquid refrigerant or a type that is cooled using the Juul-Thompson effect, and is difficult to apply to an infrared detection device that does not have a refrigerant container.

The present invention was developed in view of the above-mentioned points, and involves forming a soft metal layer on each of the infrared sensing element and the semiconductor circuit board for signal processing, and then stacking them and fixing them together via the soft metal layer. The purpose is to provide a new integrated infrared detection device.

Embodiments of the present invention will be described in detail below with reference to the drawings.

1 to 3 show an embodiment of the present invention, and FIG. 1 shows a substrate made of a multi-component semiconductor, such as p-type Hgl-xDdxTe, on which a plurality of infrared sensing elements are formed; A plurality of island-like n-type regions 16a, 16b, 16c, . An In electrode layer 17 is formed on each n-type region.
a, 17b, 17c, . . . are raised like buttons.

FIG. 2 shows the structure of a signal reading integrated circuit board S integrated with the two-dimensional optical sensor D, in which a plurality of transistor elements are formed on the surface of a silicon substrate 18. This transistor element group is for reading out signals from the optical sensor D, and its arrangement pitch is the same as that of the island-like region group in FIG. 20 and 2 on the silicon substrate 18
1 indicates a common bus wiring for the base and collector electrodes of each transistor element, and 19a, 19b, 1 are connected to the emitter electrode of each transistor.
In is excited like 9c,... Note that in order to form a raised part of In on a silicon substrate as shown in Figure 2, a non-rectifying contact is formed with chromium (Cr) or aluminum (Al).
If gold (Au) is deposited on the Cr (or Al) layer and then In is deposited on the Au layer, the In will blend well with the Au, and the Cr (or Al) will blend well with the oxide film on the silicon substrate. Because of the close contact, good results can be obtained without the In layer falling off.

FIG. 3 shows a state in which the two-dimensional optical sensor D and the IC substrate S are stacked and integrated, and the two are stacked so that the Ins are correctly opposed to each other. To integrate the above two, heat it to about 100℃ and press it.
Since the In layers are easily fused together, both D and S can be integrated by removing the pressure and allowing them to cool. This integrated composite semiconductor chip is fixed to the heat sink 14 with the optical sensor D facing upward, and is assembled in an airtight container together with an electronic cooler to form a completed cooling type infrared detection device. However, the electronic cooler and the airtight container serving as the envelope are not shown.

The infrared detection device of the present invention described above integrates a multi-component semiconductor that converts infrared rays into an electrical signal and an integrated circuit made of silicon. can be immediately taken out from the lead wire attached to the infrared detector envelope. Therefore, it is possible to omit the preamplifier, wave circuit, etc. that were conventionally placed outside the infrared detection device, so temperature measurement devices, mapping devices, etc. that use infrared rays can be made smaller and lighter, making them particularly useful for automobiles, aircraft, etc. This is extremely advantageous when applied to on-board equipment.

In addition, in the present invention, the soft metal In is used for the connection between the electrodes of the multi-component semiconductor substrate and the circuit element substrate that constitute the infrared sensing element, so the thermal cycle between the room temperature and the low temperature that is the operating temperature causes the connection between the substrates. In metal absorbs the strain. Therefore, there is no problem of disconnection between the electrodes, and a high-quality infrared detection device can be provided.

[Brief explanation of the drawing]

Figures 1 to 3 show an embodiment of the present invention, in which Figure 1 is a plan view of a two-dimensional optical sensor, Figure 2 is a plan view of a silicon circuit board for signal processing, and Figure 3 is a plan view of a silicon circuit board for signal processing. FIG. 3 is a cross-sectional view showing a state in which the two are integrated. 14... Heat sink, 15... Two-dimensional optical sensor substrate, 16a, 16b, 16c,... Island-shaped n-type region, 17a, 17b, 17c,... In electrode, 18
...Silicon substrate, 19a, 19b, 19c,...
...Emitsuta's In electrode, D...Infrared detection element, S
...Integrated circuit element.

Claims (1)

[Scope of utility model registration request] The electrode of an infrared sensing element consisting of Hg _1-x Cd _x Te is
The infrared sensing element is formed thickly from a soft metal made of In, and the infrared detecting element is placed in such a manner that the electrode and the convex connection are in contact with a Si circuit board having a convex connection made of In, a soft metal. An infrared detection device characterized in that the two soft metal layers are integrated by thermocompression bonding the two soft metal layers while facing each other.