JPH04313373A - Method for cleaning part mounted substrate - Google Patents

Method for cleaning part mounted substrate

Info

Publication number
JPH04313373A
JPH04313373A JP2261291A JP2261291A JPH04313373A JP H04313373 A JPH04313373 A JP H04313373A JP 2261291 A JP2261291 A JP 2261291A JP 2261291 A JP2261291 A JP 2261291A JP H04313373 A JPH04313373 A JP H04313373A
Authority
JP
Japan
Prior art keywords
substrate
plasma
argon gas
cleaning
vacuum chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2261291A
Other languages
Japanese (ja)
Inventor
Tetsuo Kurokawa
黒川 哲夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2261291A priority Critical patent/JPH04313373A/en
Publication of JPH04313373A publication Critical patent/JPH04313373A/en
Withdrawn legal-status Critical Current

Links

Abstract

PURPOSE:To clean a part mounted substrate with argon gas plasma while preventing the oxidation of a copper pattern formed on the substrate surface. CONSTITUTION:Argon gas is introduced into a vacuum chamber 10, a high-frequency high voltaage is impressed between the electrodes 16 and 18 provided in the chamber 10 to convert the argon gas into plasma, the plasma is allowed to impinge on the surface of the electronic part mounted substrate 22 placed on the electrode 16 connected to a high-frequency power source 20, and the substrate 22 surface is cleaned. In this case, 5-10vol.% of hydrogen gas is introduced into the argon gas to convert the hydrogen gas into plasma along with the argon gas to clean the substrate 22 surface.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明はアルゴンガスのプラズマ
を利用した部品実装基板の清浄方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of cleaning a component mounting board using argon gas plasma.

【0002】ICの基板への実装において、ICチップ
の端子から外部回路に直接電気的に接続する場合に、ワ
イヤーボンディング接続方法が使用される。ワイヤーボ
ンディング接続方法では、ICチップをリードフレーム
や配線基板上にAu−Si共晶半田または,エポキシ樹
脂接着剤などを用いてダイボンディングし、次にチップ
電極端子と外部端子とをAu、Al細線の熱圧着または
超音波ボンディングにより接続する。この接続方法は、
一端子ごとにワイヤーを接続するので、電極数の多いI
Cチップでは接続に時間がかかり、また信頼性の低下が
問題となる。このため、量産工場では自動ボンディング
装置を導入し、接続作業の合理化と信頼性の向上を実現
している。
[0002] When mounting an IC on a substrate, a wire bonding connection method is used to directly electrically connect the terminals of the IC chip to an external circuit. In the wire bonding connection method, an IC chip is die-bonded onto a lead frame or wiring board using Au-Si eutectic solder or epoxy resin adhesive, and then chip electrode terminals and external terminals are connected using Au or Al thin wires. Connect by thermocompression bonding or ultrasonic bonding. This connection method is
Since a wire is connected to each terminal, I
With C chips, it takes time to connect, and there is a problem of reduced reliability. For this reason, mass production factories have introduced automatic bonding equipment to streamline connection work and improve reliability.

【0003】ワイヤーボンディングする基板の導体パッ
ド表面は、各プロセスでの熱処理による酸化物や炭化物
の形成、洗浄による有機物やフラックスの付着等により
汚染され、著しくボンディング性が悪くなっている。こ
のため、ワイヤーボンディングに先立ち基板のボンディ
ング表面をクリーニングする必要がある。
[0003] The surface of the conductor pad of the substrate to which wire bonding is performed is contaminated by the formation of oxides and carbides due to heat treatment in each process, and the adhesion of organic matter and flux due to cleaning, resulting in significantly poor bonding properties. Therefore, it is necessary to clean the bonding surface of the substrate prior to wire bonding.

【0004】0004

【従来の技術】ワイヤーボンディングに先立ち、基板の
導体パッド表面をクリーニングする方法として、アルゴ
ン(Ar)ガスのプラズマを利用したものが知られてい
る。
2. Description of the Related Art A method using argon (Ar) gas plasma is known as a method for cleaning the surface of a conductor pad on a substrate prior to wire bonding.

【0005】これは、真空チャンバー内にアルゴンガス
を導入し、該真空チャンバー内に設けられた電極間に高
周波の高電圧を印加してアルゴンガスをプラズマ化し、
高周波電源に接続された電極上に載置された電子部品実
装用基板表面にプラズマを衝突させて基板表面をクリー
ニングする方法である。
[0005] This method involves introducing argon gas into a vacuum chamber, applying a high frequency high voltage between electrodes provided in the vacuum chamber, and turning the argon gas into plasma.
This is a method of cleaning the surface of an electronic component mounting substrate placed on an electrode connected to a high-frequency power source by colliding plasma with the surface of the substrate.

【0006】図2を参照してプラズマ洗浄方法の原理に
ついて説明する。基板2を載置した電極を高周波高圧電
源に接続し、グロー放電によりアルゴンガスをプラズマ
化すると、図2(A)に示されるように、Arイオンが
基板2に衝突し、基板表面に付着した汚染物(4)が破
線で示すように叩きだされ基板表面がクリーニングされ
る。
The principle of the plasma cleaning method will be explained with reference to FIG. When the electrode on which the substrate 2 is placed is connected to a high-frequency high-voltage power source and the argon gas is turned into plasma by glow discharge, Ar ions collide with the substrate 2 and adhere to the substrate surface, as shown in Figure 2 (A). Contaminants (4) are knocked out as shown by the broken line, and the substrate surface is cleaned.

【0007】また、真空チャンバー内の真空度が1〜0
.1パスカル程度であるので、真空チャンバー内に残留
した酸素(O)が基板2表面に衝突し、基板表面に形成
された炭化物6と化合することにより、炭化物6をCO
、CO2 の形で除去することによっても基板表面をク
リーニングする。クリーニング時間は4〜5分が適当で
ある。
[0007] Furthermore, the degree of vacuum in the vacuum chamber is between 1 and 0.
.. Since it is about 1 Pascal, the oxygen (O) remaining in the vacuum chamber collides with the surface of the substrate 2 and combines with the carbide 6 formed on the substrate surface, converting the carbide 6 into CO2.
, in the form of CO2, also cleans the substrate surface. A suitable cleaning time is 4 to 5 minutes.

【0008】[0008]

【発明が解決しようとする課題】しかし、真空チャンバ
ー内の酸素は基板表面に形成された炭化物と化合して、
この炭化物をCO、CO2 の形で除去すると同時に、
図3に示すように基板2表面に形成された導体パッド8
等のCuと反応し、Cu膜が酸化をして変色が生じると
いう問題がある。このCu膜の変色は、長時間のプラズ
マ洗浄を行った場合特に顕著である。
[Problems to be Solved by the Invention] However, oxygen in the vacuum chamber combines with carbides formed on the substrate surface.
At the same time, this carbide is removed in the form of CO and CO2,
As shown in FIG. 3, conductive pads 8 formed on the surface of the substrate 2
There is a problem in that the Cu film reacts with Cu such as oxidation and discoloration occurs. This discoloration of the Cu film is particularly noticeable when plasma cleaning is performed for a long time.

【0009】本発明はこのような点に鑑みてなされたも
のであり、その目的とするところは、基板表面に形成さ
れた銅パターンの酸化を防止することのできるアルゴン
のプラズマを利用した部品実装基板の清浄方法を提供す
ることである。
The present invention has been made in view of these points, and its purpose is to provide a component mounting method using argon plasma that can prevent oxidation of copper patterns formed on the surface of a substrate. An object of the present invention is to provide a method for cleaning a substrate.

【0010】0010

【課題を解決するための手段】本発明は、真空チャンバ
ー内にアルゴンガスを導入し、該真空チャンバー内に設
けられた電極間に高周波の高電圧を印加してアルゴンガ
スをプラズマ化し、高周波電源に接続された電極上に載
置された電子部品実装用基板表面に該プラズマを衝突さ
せて基板表面を清浄する部品実装基板の清浄方法におい
て、前記アルゴンガス中に5〜10体積パーセントの水
素ガスを導入してアルゴンガスとともに水素ガスをプラ
ズマ化して基板表面の清浄を行うことを特徴とする。
[Means for Solving the Problems] The present invention introduces argon gas into a vacuum chamber, applies a high frequency high voltage between electrodes provided in the vacuum chamber to turn the argon gas into plasma, and uses a high frequency power source to turn the argon gas into plasma. 5 to 10 volume percent hydrogen gas in the argon gas; The method is characterized in that the surface of the substrate is cleaned by introducing hydrogen gas into plasma along with argon gas.

【0011】[0011]

【作用】Ar+H2 の混合ガスを真空チャンバー内に
導入して部品実装基板のプラズマ清浄を行うことにより
、水素により基板表面も真空チャンバー内の酸素も還元
することができるため、真空チャンバー内の酸素は基板
表面に形成された銅と結合うすることがなく、基板表面
の酸化物を有効に除去することができる。
[Operation] By introducing a mixed gas of Ar + H2 into the vacuum chamber and performing plasma cleaning on the component mounting board, hydrogen can reduce both the board surface and the oxygen in the vacuum chamber. It does not combine with the copper formed on the substrate surface, and can effectively remove oxides on the substrate surface.

【0012】0012

【実施例】セラミック基板上にデュポン9922(デュ
ポン社の商品名)Cuペーストを塗布し、窒素ガス雰囲
気中で最高温度900°Cで約10分間、合計1時間焼
成してCu厚膜セラミック基板を作成した。このCu厚
膜セラミック基板にはCuペースト中のバインダーが付
着しており、また焼成中および保管中にCuが酸化をお
こしているため、このままではワイヤーボンディングが
著しく困難である。
[Example] DuPont 9922 (trade name of DuPont) Cu paste was coated on a ceramic substrate and baked at a maximum temperature of 900°C for about 10 minutes in a nitrogen gas atmosphere for a total of 1 hour to form a Cu thick film ceramic substrate. Created. The binder in the Cu paste is attached to this Cu thick film ceramic substrate, and the Cu is oxidized during firing and storage, so wire bonding is extremely difficult as it is.

【0013】そこで、このCu厚膜セラミック基板を図
1に示すプラズマ洗浄装置内で、本発明方法によりプラ
ズマ洗浄を行った。
Therefore, this Cu thick film ceramic substrate was subjected to plasma cleaning according to the method of the present invention in a plasma cleaning apparatus shown in FIG.

【0014】図1において、10は真空チャンバーを示
しており、アルゴンと水素の混合ガスの導入されるガス
導入ポート12と、真空チャンバー内のガスを排気する
排気7ート14が設けられている。16はカソード電極
であり、13.56MHz 、500Vの高周波交流電
源20に接続されている。また、アノード電極18は接
地されている。
In FIG. 1, reference numeral 10 indicates a vacuum chamber, which is provided with a gas introduction port 12 through which a mixed gas of argon and hydrogen is introduced, and an exhaust port 14 through which gas within the vacuum chamber is exhausted. . Reference numeral 16 denotes a cathode electrode, which is connected to a high frequency AC power source 20 of 13.56 MHz and 500 V. Further, the anode electrode 18 is grounded.

【0015】然して、体積パーセントで10%の水素ガ
スが含有されたアルゴンと水素の混合ガスを導入ポート
12を介して真空チャンバー10内に導入し、カソード
電極16上にCu厚膜セラミック基板22を載置し、カ
ソード電極16に13.56MHZ 、500Vの高周
波交流電圧を印加してグロー放電を発生させた。これに
より、真空チャンバー10内の混合ガスがプラズマ化し
、カソード電極16に載置されたCu厚膜セラミック基
板22は負電位にバイアスされるため、この負電位に引
きよせられてArイオンがCu厚膜セラミック基板22
に衝突し、基板表面をクリーニングする。
A mixed gas of argon and hydrogen containing 10% hydrogen gas by volume is introduced into the vacuum chamber 10 through the introduction port 12, and a Cu thick film ceramic substrate 22 is placed on the cathode electrode 16. A high frequency AC voltage of 13.56 MHZ and 500 V was applied to the cathode electrode 16 to generate a glow discharge. As a result, the mixed gas in the vacuum chamber 10 becomes plasma, and the Cu thick film ceramic substrate 22 placed on the cathode electrode 16 is biased to a negative potential. Membrane ceramic substrate 22
and cleans the substrate surface.

【0016】本実施例では、真空チャンバー10内に導
入された水素ガスが基板22表面及び真空チャンバー1
0内の酸素も還元するため、約5分間のプラズマ洗浄を
行ったところ、Cu厚膜は酸化により変色することなく
基板表面の酸化物、炭化物等をきれいに除去することが
できた。このように表面処理をしたCu厚膜セラミック
基板に金線をワイヤーボンディングしたところ、非常に
すぐれたボンディング性を得ることができた。ボンディ
ング性としては、Auボールで従来に比較して25〜3
0%の剪断強度の向上がみられた。
In this embodiment, the hydrogen gas introduced into the vacuum chamber 10 covers the surface of the substrate 22 and the vacuum chamber 1.
Plasma cleaning was performed for about 5 minutes to reduce the oxygen in the substrate, and the thick Cu film was able to cleanly remove oxides, carbides, etc. from the substrate surface without discoloring due to oxidation. When a gold wire was wire-bonded to the Cu thick-film ceramic substrate that had been surface-treated in this manner, very excellent bonding properties could be obtained. The bonding property is 25-3 compared to conventional Au balls.
A 0% improvement in shear strength was observed.

【0017】またスルーホール基板では、部品をリフロ
ー半田付けしたあと有機溶剤で基板を洗浄するが、洗浄
液の残滓がスルーホール周辺に残り、スルーホール周辺
のパッド部分でのボンディング性が非常に悪くなる。こ
のスルーホール基板を上述した条件と同一条件でプラズ
マ洗浄を行ったところ、有機溶剤の洗浄残滓を完全に除
去することができ、ボンディング性の著しい改良がみら
れた。
[0017] Furthermore, in the case of a through-hole board, the board is cleaned with an organic solvent after parts are reflow soldered, but the residue of the cleaning liquid remains around the through-hole, and the bonding performance at the pad area around the through-hole becomes extremely poor. . When this through-hole substrate was subjected to plasma cleaning under the same conditions as described above, the cleaning residue of the organic solvent could be completely removed, and a remarkable improvement in bonding properties was observed.

【0018】また、ガラスエポキシ基板では半田付けに
よる部品表面実装後のフラックス残滓により、ボンディ
ングパッド表面が汚染されてボンディング性が悪化する
が、上述した条件と同一条件下でガラスエポキシ基板の
プラズマ洗浄を行ったところ、ボンディング性を著しく
改善することができた。
In addition, on glass epoxy boards, flux residue after surface mounting of components by soldering contaminates the bonding pad surface and deteriorates bonding performance. However, plasma cleaning of glass epoxy boards was performed under the same conditions as above. As a result, we were able to significantly improve bonding properties.

【0019】本発明のプラズマ洗浄では、真空チャンバ
ー内の真空度は1〜0.1パスカル、高周波の交流電圧
を500〜1,000Vに設定するのが望ましい。また
、アルゴンガス中の水素ガスの含有量は、安全性の面か
ら5〜10体積パーセントが適当である。
In the plasma cleaning of the present invention, it is desirable to set the degree of vacuum in the vacuum chamber to 1 to 0.1 Pascal and to set the high frequency AC voltage to 500 to 1,000V. Further, from the viewpoint of safety, the content of hydrogen gas in the argon gas is suitably 5 to 10 percent by volume.

【0020】[0020]

【発明の効果】本発明は以上を詳述したように、アルゴ
ンガス中に5〜10体積パーセントの水素ガスを導入し
て部品実装基板のプラズマ洗浄を行うなうようにしたの
で、基板表面上の銅パターンが洗浄中に酸化されること
がなく、基板表面上の酸化物、炭化物、洗浄よる有機物
残滓、フラックス残滓等をきれいに除去できるという効
果を奏する。
Effects of the Invention As described in detail above, the present invention performs plasma cleaning of a component mounting board by introducing 5 to 10 volume percent hydrogen gas into argon gas. The copper pattern is not oxidized during cleaning, and oxides, carbides, organic residues from cleaning, flux residues, etc. on the substrate surface can be removed cleanly.

【0021】本発明方法によると、ボンディング性はA
uボールの剪断強度を25〜30%向上することができ
、半田の濡れ性を著しく向上することができる。
According to the method of the present invention, the bonding property is A
The shear strength of the u-ball can be improved by 25 to 30%, and the wettability of solder can be significantly improved.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明を実施するのに適したプラズマ洗浄装置
の概略図である。
FIG. 1 is a schematic diagram of a plasma cleaning apparatus suitable for implementing the invention.

【図2】プラズマ洗浄方法説明図である。FIG. 2 is an explanatory diagram of a plasma cleaning method.

【図3】従来の洗浄方法の問題点説明図である。FIG. 3 is a diagram illustrating problems in the conventional cleaning method.

【符号の説明】[Explanation of symbols]

10  真空チャンバー 16  カソード電極 18  アノード電極 20  高周波交流電源 22  Cu厚膜セラミック基板 10 Vacuum chamber 16 Cathode electrode 18 Anode electrode 20 High frequency AC power supply 22 Cu thick film ceramic substrate

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】  真空チャンバ(10)にアルゴンガス
を導入し、該真空チャンバ(10)内に設けられた電極
(16 ,18) 間に高周波の高電圧を印加してアル
ゴンガスをプラズマ化し、高周波電源(20)に接続さ
れた電極(16)上に載置された電子部品実装用基板(
22)表面に該プラズマを衝突させて基板(22)表面
を清浄する部品実装基板の清浄方法において、前記アル
ゴンガス内に5〜10体積パーセントの水素ガスを導入
して、アルゴンガスと共に水素ガスをプラズマ化して基
板(22)表面の清浄を行うことを特徴とする部品実装
基板の清浄方法。
1. Introducing argon gas into a vacuum chamber (10) and applying a high frequency high voltage between electrodes (16, 18) provided in the vacuum chamber (10) to turn the argon gas into plasma, An electronic component mounting board (
22) In a method for cleaning a component mounting board in which the surface of the board (22) is cleaned by bombarding the surface with the plasma, 5 to 10 volume percent of hydrogen gas is introduced into the argon gas, and the hydrogen gas is mixed with the argon gas. A method for cleaning a component mounting board, characterized by cleaning the surface of a board (22) by converting it into plasma.
【請求項2】  真空チャンバ(10)内の真空度を1
 〜0.1 パスカル、高周波高電圧を500 〜1,
000 Vに設定したことを特徴とする請求項1に記載
の部品実装基板の清浄方法。
[Claim 2] The degree of vacuum in the vacuum chamber (10) is set to 1.
~0.1 Pascal, high frequency high voltage 500 ~1,
2. The method of cleaning a component mounting board according to claim 1, wherein the voltage is set to 000 V.
JP2261291A 1991-01-24 1991-01-24 Method for cleaning part mounted substrate Withdrawn JPH04313373A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2261291A JPH04313373A (en) 1991-01-24 1991-01-24 Method for cleaning part mounted substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2261291A JPH04313373A (en) 1991-01-24 1991-01-24 Method for cleaning part mounted substrate

Publications (1)

Publication Number Publication Date
JPH04313373A true JPH04313373A (en) 1992-11-05

Family

ID=12087663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2261291A Withdrawn JPH04313373A (en) 1991-01-24 1991-01-24 Method for cleaning part mounted substrate

Country Status (1)

Country Link
JP (1) JPH04313373A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6149984A (en) * 1995-10-15 2000-11-21 Semiconductor Energy Laboratory, Inc. Laser irradiation method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6149984A (en) * 1995-10-15 2000-11-21 Semiconductor Energy Laboratory, Inc. Laser irradiation method

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Effective date: 19980514