New! View global litigation for patent families

JPH04313273A - Micro crystal silicon thin-film semiconductor device and liquid display device using the same - Google Patents

Micro crystal silicon thin-film semiconductor device and liquid display device using the same

Info

Publication number
JPH04313273A
JPH04313273A JP10481591A JP10481591A JPH04313273A JP H04313273 A JPH04313273 A JP H04313273A JP 10481591 A JP10481591 A JP 10481591A JP 10481591 A JP10481591 A JP 10481591A JP H04313273 A JPH04313273 A JP H04313273A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
formed
film
si
high
μc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10481591A
Inventor
Koji Mori
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To obtain a liquid crystal surface device which enables a high-speed switching to be made by forming a micro crystal silicon layer (μC-Si) on a plastic substrate.
CONSTITUTION: A gate electrode 2 is formed on a plastic film substrate 1, a gate insulation film 3 is formed, and then an undoped μC-Si 4 is formed. Then, n(+)-μC-Si 5 for ohmic contact is formed continuously and is machined to a specific shape. thus enabling a μC-Si layer 6 to be formed. Therefore, a film of a TFT(thin film transistor) can be formed at a low temperature, the obtained μC-Si film has no photocon property, it shows a high conductivity and a high mobility and is suited for a high-speed drive, and further a threshold value can be controlled by activation according to ion-implantation + excimer laser at the time of its manufacture. Also, a liquid crystal display device with the TFT achieves a high-speed switching.
COPYRIGHT: (C)1992,JPO&Japio
JP10481591A 1991-04-10 1991-04-10 Micro crystal silicon thin-film semiconductor device and liquid display device using the same Pending JPH04313273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10481591A JPH04313273A (en) 1991-04-10 1991-04-10 Micro crystal silicon thin-film semiconductor device and liquid display device using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10481591A JPH04313273A (en) 1991-04-10 1991-04-10 Micro crystal silicon thin-film semiconductor device and liquid display device using the same

Publications (1)

Publication Number Publication Date
JPH04313273A true true JPH04313273A (en) 1992-11-05

Family

ID=14390908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10481591A Pending JPH04313273A (en) 1991-04-10 1991-04-10 Micro crystal silicon thin-film semiconductor device and liquid display device using the same

Country Status (1)

Country Link
JP (1) JPH04313273A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5610737A (en) * 1994-03-07 1997-03-11 Kabushiki Kaisha Toshiba Thin film transistor with source and drain regions having two semiconductor layers, one being fine crystalline silicon
WO1997022141A1 (en) * 1995-12-14 1997-06-19 Seiko Epson Corporation Method of manufacturing thin film semiconductor device, and thin film semiconductor device
US6391690B2 (en) 1995-12-14 2002-05-21 Seiko Epson Corporation Thin film semiconductor device and method for producing the same
US8466469B2 (en) * 1994-12-27 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having pair of flexible substrates

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5610737A (en) * 1994-03-07 1997-03-11 Kabushiki Kaisha Toshiba Thin film transistor with source and drain regions having two semiconductor layers, one being fine crystalline silicon
US8466469B2 (en) * 1994-12-27 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having pair of flexible substrates
WO1997022141A1 (en) * 1995-12-14 1997-06-19 Seiko Epson Corporation Method of manufacturing thin film semiconductor device, and thin film semiconductor device
US6391690B2 (en) 1995-12-14 2002-05-21 Seiko Epson Corporation Thin film semiconductor device and method for producing the same
US6660572B2 (en) 1995-12-14 2003-12-09 Seiko Epson Corporation Thin film semiconductor device and method for producing the same

Similar Documents

Publication Publication Date Title
US5053354A (en) Method of fabricating a reverse staggered type silicon thin film transistor
JPH04369271A (en) Thin film transistor
JPS5658267A (en) Insulated gate type field-effect transistor
JPH03278466A (en) Thin film transistor and manufacture thereof
JPS60160170A (en) Thin film transistor
JPS6187371A (en) Thin-film semiconductor device
JPH02222546A (en) Manufacture of mos field-effect transistor
JPS55133574A (en) Insulated gate field effect transistor
JPS60198861A (en) Thin film transistor
JPS61252667A (en) Thin film transistor and manufacture thereof
JPH04362924A (en) Semiconductor integrated circuit device for flat plate type light valve substrate
JPH01194351A (en) Thin film semiconductor device
JPH0334434A (en) Thin film semiconductor device and manufacture thereof
JPS58142566A (en) Thin film semiconductor device
JPS58158967A (en) Silicon thin film transistor
JPS56140321A (en) Display device
JPS5688354A (en) Semiconductor integrated circuit device
JPH04206766A (en) Manufacture of semiconductor device
JPH04133033A (en) Semiconductor single crystal thin film substrate optical valve device and manufacture thereof
JPS5827364A (en) Insulated gate type field effect semiconductor device
JPS5688111A (en) Liquid crystal display device with solar battery
JPS6014473A (en) Electrode structure for thin film transistor
JPH04299864A (en) Active matrix type liquid crystal display
JPH03233431A (en) Liquid crystal display panel
JPS63122176A (en) Semiconductor device and its manufacture