JPH0431253Y2 - - Google Patents
Info
- Publication number
- JPH0431253Y2 JPH0431253Y2 JP6907687U JP6907687U JPH0431253Y2 JP H0431253 Y2 JPH0431253 Y2 JP H0431253Y2 JP 6907687 U JP6907687 U JP 6907687U JP 6907687 U JP6907687 U JP 6907687U JP H0431253 Y2 JPH0431253 Y2 JP H0431253Y2
- Authority
- JP
- Japan
- Prior art keywords
- tube
- crystal growth
- reaction tube
- sealed
- semiconductor crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 30
- 238000006243 chemical reaction Methods 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000005192 partition Methods 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 2
- 239000010453 quartz Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000003466 welding Methods 0.000 description 9
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6907687U JPH0431253Y2 (enExample) | 1987-05-08 | 1987-05-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6907687U JPH0431253Y2 (enExample) | 1987-05-08 | 1987-05-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63177959U JPS63177959U (enExample) | 1988-11-17 |
| JPH0431253Y2 true JPH0431253Y2 (enExample) | 1992-07-28 |
Family
ID=30909468
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6907687U Expired JPH0431253Y2 (enExample) | 1987-05-08 | 1987-05-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0431253Y2 (enExample) |
-
1987
- 1987-05-08 JP JP6907687U patent/JPH0431253Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63177959U (enExample) | 1988-11-17 |
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