JPH04306837A - Resin sealed semiconductor device - Google Patents

Abstract

PURPOSE:To avoid the corrosion of wiring due to the permeation of water content into the wiring layer of a semiconductor pellet for improving the humidity resistance in the title resin sealed semiconductor device. resin CONSTITUTION:In the title resin sealed semiconductor device 1, a bonding metallic bodies 44B or 46B are arranged between interlayer insulating films 43 and 45 such as the region 11 around a semiconductor pellet 4, the region 12 around an outer terminal 46P or between the interlayer insulating film 45 and the final protective film 47 (a release preventive structure 7). Furthermore, the bonding metallic body 46B is connected to the lower layer bonding metallic body 44B while the bonding metallic body 44B is connected to the lower semiconductor region 42 (the release preventive structure 7 is to be stud-structured).

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device, and more particularly to a technique that is effective when applied to improving the moisture resistance of a resin-sealed semiconductor device.

0002

[Prior Art] MSP structure, S
A so-called surface-mount type resin-sealed semiconductor device such as an OP structure or a QFP structure is used. This type of resin-sealed semiconductor device is small and thin, and is suitable for mass production and is therefore inexpensive.

The basic structure of the resin-sealed semiconductor device is that the leads are connected to external terminals (bonding pads) of a semiconductor pellet (semiconductor chip) mounted with its back side facing the front surface of a tab supported by tab suspension leads. electrically connect the inner leads of The external terminals and inner leads of the semiconductor pellet are connected by wire bonding. The semiconductor pellet, the tab suspension lead, the tab, and the inner lead are sealed with a resin sealant. Epoxy resin is generally used as the resin sealant. The outer lead of the lead is integrated with the inner lead,
It is projected to the outside of the resin sealing body.

[0004] The semiconductor pellet mounted on the resin-sealed semiconductor device is mainly composed of a single-crystal silicon substrate, and a circuit for processing, for example, a video signal is mounted in the center of the element-forming surface of the single-crystal silicon substrate. be done. The circuit is composed of a plurality of semiconductor elements arranged on the main surface of a single-crystal silicon substrate, and wiring for connecting between semiconductor elements or circuits is provided on the element-forming surface of the single-crystal silicon substrate that covers the semiconductor elements. Layers are constructed.

[0005] Consumer linear ICs usually have a two-layer wiring layer on the element formation surface of a single crystal silicon substrate, with the aim of achieving higher integration by reducing the area occupied by the wiring, or higher speed operation by reducing the wiring length. is configured. Aluminum alloy wiring as a low-resistance wiring material is disposed in each wiring layer of the two-layer structure. An interlayer insulating film (passivation film) is formed between the semiconductor element and the first wiring layer, and between the first wiring layer and the second wiring layer to insulate both. Electrical connection between the semiconductor element and the first layer wiring, and electrical connection between the first layer wiring and the second layer wiring are made through connection holes formed in each interlayer insulating film. . Further, the second layer wiring is covered with a final protective film (final passivation film), and the semiconductor pellet containing this second layer wiring is protected from the external environment.

Since consumer linear ICs are in high demand and require lower prices, organic films such as polyimide resin films are used for the interlayer insulating film and the final protective film that are comprised of the semiconductor pellets mentioned above. be done. Polyimide resin film is
The film can be formed in a single coating step in the semiconductor pellet manufacturing process (wafer process), and since the polyimide resin film itself is inexpensive, the manufacturing cost of the semiconductor pellet can be reduced.

[0007] When the semiconductor pellet has a two-layer wiring structure, the external terminals of the semiconductor pellet are usually formed in the second wiring layer, which is the uppermost wiring layer. That is, the external terminal is formed of an aluminum alloy film. This external terminal is connected to a bonding wire through a bonding opening formed in the final protective film, and is connected to the inner lead through this bonding wire.

This type of resin-sealed semiconductor device is described in, for example, Electronic Materials, December 1989 issue, No. 2.
It is described from page 7 onwards.

[0009]

However, the inventors of the present invention found the following problems in the resin-sealed semiconductor device described above.

(1) In the resin-sealed semiconductor device, a bonding wire is bonded to the external terminal of the semiconductor pellet. When using, for example, Au as the bonding wire, a so-called ball bonding method is used for the purpose of increasing bondability. The ball bonding method is a method in which a bonding portion of an Au wire is heated to form an Au ball, and the Au ball is bonded using thermocompression bonding in combination with ultrasonic vibration. Using this ball bonding method, the bonded A
The quality of the final protective film in the area around the U-wire, that is, the area around the external terminal, deteriorates due to the influence of heat during bonding, in addition to the fact that an organic film is used as the material.

On the other hand, in a resin-sealed semiconductor device, thermal stress is generated in the resin-sealed body during a solder dipping process, infrared reflow, hot air reflow, etc. in the mounting process. Since this resin sealing body is formed of an epoxy resin, that is, an organic material, it has good adhesion to the final protective film of the semiconductor pellet.

[0012] Therefore, due to the thermal stress generated in the resin sealing body, adhesion between the part where the film quality of the final protective film has deteriorated and the underlying interlayer insulating film in the area around the external terminal of the semiconductor pellet deteriorates. As the strength decreases, parts of the final protective film with deteriorated quality peel off. This final peeling of the protective film forms a moisture infiltration path, and moisture that has entered from outside the resin molding body through the penetration path between this resin molding body, the inner leads, and the bonding wires is absorbed into the semiconductor pellet. It penetrates into the penetration path formed between the final protective film and the underlying interlayer insulating film. The moisture that has entered the semiconductor pellet corrodes the second layer wiring that extends around the external terminal and is smaller in size than the external terminal, resulting in disconnection. That is, as a result, the moisture resistance of the resin-sealed semiconductor device deteriorates.

(2) The peripheral region of the element forming surface of the semiconductor pellet of the resin-sealed semiconductor device is more susceptible to the above-mentioned thermal stress and heat generated during the manufacturing process of the semiconductor pellet than the central part of the element forming surface. The stress based on stress is maximum. In other words, the amount of shrinkage increases in the peripheral region of the final protective film and the interlayer insulating film of the semiconductor pellet, and the final protective film and the interlayer insulating film each peel off in this peripheral region. Therefore, moisture that has entered from outside the resin molding body through the infiltration path between the resin molding body, the tab suspension lead, and the tab infiltrates into the peripheral area of the semiconductor pellet and spreads to the peripheral area of the semiconductor pellet. Each of the existing first-layer wiring and second-layer wiring corrodes, resulting in disconnection defects. That is,
Similarly, the moisture resistance of the resin-sealed semiconductor device deteriorates.

(3) In semiconductor pellets for resin-sealed semiconductor devices, shrinkage of the final protective film and interlayer insulating film mentioned above in problem (2) is caused by the shrinkage of the first layer wiring and the second layer wiring. This may cause disconnection failures in the connection area with the wiring, or peeling of the final protective film or interlayer insulating film in the vicinity of the wiring, such as the power supply wiring, which has a wiring width several times larger than that of the signal wiring.

An object of the present invention is to provide a technique that can prevent corrosion of wiring extending in the peripheral area of external terminals of a semiconductor pellet and improve moisture resistance in a resin-sealed semiconductor device. It is in.

Another object of the present invention is to provide a technique capable of preventing corrosion of wiring extending in the peripheral area of a semiconductor pellet and improving moisture resistance in a resin-sealed semiconductor device. be.

Another object of the present invention is to provide a technique capable of preventing disconnection failures in connection regions between upper and lower wirings of a semiconductor pellet in a resin-sealed semiconductor device.

Another object of the present invention is to provide a technique capable of preventing peeling of the interlayer insulating film on each of the power supply wiring of the semiconductor pellet and the electrode of the MOS capacitive element in a resin-sealed semiconductor device. It's about doing.

Another object of the present invention is to provide a technique capable of achieving the above object and other objects, as well as simplifying the manufacturing process of a resin-sealed semiconductor device.

The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[0021]

[Means for Solving the Problems] Among the inventions disclosed in this application, a brief overview of typical inventions is as follows.

(1) A lead is electrically connected to an external terminal disposed on the surface of the interlayer insulating film of the semiconductor pellet through an opening formed in the final protective film covering it, and the semiconductor pellet is sealed with a resin. In the resin-sealed semiconductor device, the adhesive force between the interlayer insulating film and the final protective film around the external terminal of the semiconductor pellet is An adhesive metal body is arranged that has a higher adhesive force than the adhesive force between the final protective film and the resin sealing the semiconductor pellet.

(2) The adhesive metal body of the means (1) is formed of the same wiring layer as the external terminal of the semiconductor pellet (formed in the same manufacturing process).

(3) A semiconductor pellet in which an interlayer insulating film, a wiring layer, and a final protective film are sequentially laminated on the element formation surface of the semiconductor substrate is mounted on the surface of the lead, and the semiconductor pellet is sealed with resin. In the resin-sealed semiconductor device, the adhesive strength between the semiconductor pellet and the most peripheral region of the element formation surface of the semiconductor substrate and the interlayer insulating film is greater than the adhesive force between the semiconductor substrate and the interlayer insulating film. or between the interlayer insulating film and the final protective film in the most peripheral region, or between the interlayer insulating film and the final protective film, respectively. Adhesive metal bodies are arranged so that the adhesive force between them is higher than that of the other metal bodies.

(4) A part of the adhesive metal body of the means (1) or (2) is connected to the interlayer insulating film through a connection hole formed under the adhesive metal body of the interlayer insulating film. It is bonded to the wiring layer formed below or to the element formation surface of the semiconductor substrate.

(5) A second wiring extending on the interlayer insulating film is connected to the first wiring extending on the element formation surface of the semiconductor substrate of the semiconductor pellet through a contact hole formed in the interlayer insulating film covering the first wiring. In a resin-sealed semiconductor device in which the first wiring and the second wiring are connected to each other and the semiconductor pellet is sealed with a resin, a wiring layer formed of the same wiring layer as the first wiring is formed around a connection hole connecting the first wiring and the second wiring. A first adhesive metal body and a second adhesive metal body formed of the same wiring layer as the second wiring are arranged, and a portion of each of the first adhesive metal body and the second adhesive metal body is arranged. are connected through the opening formed in the interlayer insulating film.

(6) In a resin-sealed semiconductor device in which a semiconductor pellet having a wiring layer on an interlayer insulating film covering an electrode of a capacitive element or a power supply wiring is sealed with a resin, the capacitance of the interlayer insulating film of the semiconductor pellet is An adhesive metal body formed of the wiring layer is formed on a region of the electrode of the element or the power supply wiring, an opening is formed on a part of the electrode of the capacitive element or a part of the power supply wiring in the interlayer insulating film, and A part of the adhesive metal body is connected to the electrode of the capacitive element or the power supply wiring through the opening.

[0028]

[Operation] According to the above-mentioned means (1), compared to the adhesive force between the final protective film of the semiconductor pellet and the resin sealing the semiconductor pellet, The adhesive force between the adhesive metal body (dummy metal body pattern) and the interlayer insulating film and the final protective film can be increased, and the adhesion between the interlayer insulating film and the final protective film can be improved. It is possible to prevent the final protective film around the external terminal of the pellet from peeling off from the interlayer insulating film, and eliminate the path of moisture intrusion between the interlayer insulating film and the final protective film. Further, the adhesive metal body can capture moisture that intrudes from the external terminal through a moisture intrusion path between the interlayer insulating film and the final protective film, and can suppress further intrusion of moisture. As a result, corrosion due to moisture of the wiring arranged around the external terminal of the semiconductor pellet with the adhesive metal body interposed therebetween can be prevented, and the moisture resistance of the resin-sealed semiconductor device can be improved.

According to the above-mentioned means (2), the adhesive metal body can be formed using the process of forming external terminals of the semiconductor pellet, so that the adhesive metal body can be formed using the process of manufacturing the semiconductor pellet of the resin-sealed semiconductor device. The number can be reduced.

According to the above-mentioned means (3), the adhesive force between the most peripheral region of the element formation surface of the semiconductor substrate of the semiconductor pellet and the interlayer insulating film, or the adhesive force between the most peripheral region of the interlayer insulating film and the final protective film. and prevent peeling in the peripheral area due to the difference in linear expansion coefficient between the semiconductor substrate and the interlayer insulating film or the difference in the linear expansion coefficient between the interlayer insulating film and the final protective film, It is possible to eliminate a path for moisture to infiltrate between the peripheral region of the element formation surface of the semiconductor substrate and the interlayer insulating film, or between the interlayer insulating film and the final protective film. Further, the adhesive metal body is configured to prevent moisture from penetrating into the internal region through a moisture penetration path between the semiconductor substrate and the interlayer insulating film or between the interlayer insulating film and the final protective film in the peripheral region of the semiconductor pellet. can be captured and suppressed from further moisture infiltration. As a result, the wiring disposed between the semiconductor substrate and the interlayer insulating film of the semiconductor pellet or between the interlayer insulating film and the final protective film is corroded due to moisture reaching the peripheral area of the semiconductor pellet through the lead. The moisture resistance of the resin-sealed semiconductor device can be improved.

According to the above-mentioned means (4), the adhesive strength between the adhesive metal body and the wiring layer (metal-to-metal bond) or the semiconductor substrate (
It is possible to increase the adhesion force with Si eutectic bond), and also to sandwich the interlayer insulating film between the adhesive metal body and the wiring layer or semiconductor substrate, so that peeling of the interlayer insulating film can be further prevented.

According to the above-mentioned means (5), the first adhesive metal body, the opening, and the second adhesive metal body are provided in the peripheral area of the connecting portion between the first wiring (semiconductor region or wiring) and the second wiring. By arranging a peel-preventing structure (peeling-preventing rivet) made of a metal body, it is possible to disperse stress (e.g. thermal stress) concentrated at the connection portion of the interlayer insulating film into the peel-preventing structure. It can prevent disconnection of the connection part.

According to the above-mentioned means (6), since the electrode or power supply wiring of the capacitive element and the interlayer insulating film are sandwiched between the adhesive metal body connected through the opening, the electrode or power supply wiring of the capacitive element Peeling of the interlayer insulating film from the wiring can be prevented.

The configuration of the present invention will be described below along with an embodiment in which the present invention is applied to a resin-sealed semiconductor device employing an MSP structure and constituting a consumer linear IC.

In all the figures for explaining the embodiment, parts having the same functions are given the same reference numerals, and repeated explanations thereof will be omitted.

[0036]

[Example] (Example 1) The configuration of a resin-sealed semiconductor device adopting an MSP structure, which constitutes a consumer linear IC that is Example 1 of the present invention, is shown in FIG. 1 (cross-sectional view of main parts). .

As shown in FIG. 1, a resin-sealed semiconductor device 1 employing an MSP structure has a semiconductor pellet (semiconductor chip) 4 mounted on the surface of a tab 2D supported by a tab suspension lead 2C. On the surface of tab 2D, semiconductor pellet 4
Each of the back surfaces (the surfaces facing the element forming surface) of the adhesive layer 3
are interposed and fixed to each other. For the adhesive layer 3, for example, conductive Ag paste is used. In a region along the outer periphery of the semiconductor pellet, a plurality of inner leads 2A are arranged along the periphery. The inner lead 2A has one end connected to the semiconductor pellet 4 with the bonding wire 5 interposed therebetween.
is connected to the external terminal (bonding pad) 46P of
The other end side is integrally configured (electrically connected) to the outer lead 2B. In this resin-sealed semiconductor device 1, the semiconductor pellet 4, the tab 2D, the tab suspension lead 2C, and the inner lead 2A are each sealed with a resin molding body 6. The outer leads 2B protrude from the outer periphery of the resin sealing body 6, and a plurality of outer leads 2B are arranged along the outer periphery.

Inner lead 2A, outer lead 2B, tab hanging lead 2C,
Each of the tabs 2D is cut and molded from one lead frame. This lead frame is made of, for example, Fe-Ni alloy (for example, 42 or 50 [%] Ni content), Cu, C
It is made of a U-based alloy or the like.

The resin sealing body 6 is molded using, for example, an epoxy resin by a transfer molding method.

[0040] For the bonding wire 5, for example, an Au wire is used. The Au wire is heated and melted during bonding to the external terminal 46P side of the semiconductor pellet 4,
A ball shape is formed and bonding is performed using a ball bonding method that uses ultrasonic vibration in combination with thermocompression bonding. In addition, Au wire is made by using ultrasonic vibration in combination with thermocompression bonding.
It is bonded to the inner lead 2A side. Note that the bonding wire 5 may be a Cu wire or the like instead of the Au wire.

The semiconductor pellet 4 is shown in FIGS. 1 and 2 (
As shown in the main part plan view of the semiconductor pellet), the semiconductor pellet is mainly composed of a semiconductor substrate 41 made of single crystal silicon. A plurality of circuits 20 are configured in the center of the element formation surface of this semiconductor substrate 41. The circuit 20 is made up of semiconductor elements such as MISFETs, bipolar transistors, capacitive elements, and resistive elements, and these circuits 20 have a function of processing, for example, video signals.

The semiconductor pellet 4 has a two-layer wiring structure including two wiring layers for connecting semiconductor elements or circuits 20, although the number of wiring layers is not limited to this. In other words, in the two-layer wiring structure, as shown in FIG.
, interlayer insulating film 45, second layer wiring 46A, final protective film 4
7 are sequentially laminated.

The interlayer insulating film 43 electrically isolates the semiconductor element formed on the main surface of the semiconductor substrate 41 and the first layer wiring 44A. The interlayer insulating film 43 is composed of, for example, a silicon oxide film or a composite film mainly composed of silicon oxide.

The first layer wiring 44A extends on the surface of the interlayer insulating film 43, and connects to the source region or drain of a semiconductor element, for example, a MISFET, through a contact hole 43C formed in the interlayer insulating film 43. It is electrically connected to a semiconductor region 42 which is a semiconductor region. 1st layer wiring 4
4A is, for example, aluminum or aluminum alloy,
Or it is composed of a composite membrane mainly composed of it. The aluminum alloy is aluminum to which at least one of Si, which improves alloy spike resistance, and Cu, which improves migration resistance, is added.

The interlayer insulating film 45 includes the first layer wiring 44A,
The second layer wiring 46A is electrically isolated from each other. The interlayer insulating film 45 is formed of, for example, an organic film such as a polyimide resin film. Polyimide resin films are cheaper materials than silicon oxide films and silicon nitride films, and can be formed as interlayer insulating films in a single coating and baking process, resulting in lower manufacturing costs in the semiconductor wafer manufacturing process. There is a characteristic that

The second layer wiring 46A extends on the surface of the interlayer insulating film 45, and connects to the first layer wiring 44 through a connection hole (through hole) 45T formed in the interlayer insulating film 45.
electrically connected to A. The second layer wiring 46A is made of the same material as the first layer wiring 44A.

The final protective film 47 is formed by covering the second layer wiring 46A. This final protective film 47 is formed of, for example, a polyimide resin film for the same reason as the interlayer insulating film 45.

A plurality of external terminals 46P of the semiconductor pellet 4 are basically arranged in the peripheral region of the element forming surface of the semiconductor substrate 41 (the region around the circuit 20). External terminal 4
6P is formed in the same wiring layer as the second layer wiring 46A,
Made of the same material. One end (ball portion) of the bonding wire 5 is bonded to the external terminal 46 through a bonding opening 47H formed in the final protective film 47 above the external terminal 46.

As shown in FIGS. 1 and 2, the semiconductor pellet 4 configured in this manner has at least two points in the outermost peripheral region of the semiconductor pellet 4 (between the external terminal 46P and the guard ring region 48). (area surrounded by chain lines) 11
, a peeling prevention structure (region surrounded by a dashed-dotted line) 7 is formed in any of the regions 12 (surrounded by a dashed-dotted line) around the external terminal 46P. The peel prevention structure 7 is mainly composed of adhesive metal bodies 44B, 46B, connection holes 43C, 45T, and semiconductor region 42, respectively.

Adhesive metal body 44B of the peel sealing structure 7
is formed in the same wiring layer as the first layer wiring 44A, and is made of the same material as the first layer wiring 44A. The adhesive metal body 44B is disposed between each of the interlayer insulating films 43 and 45, and the adhesive force between the adhesive metal body 44B and any of the interlayer insulating films 43 and 45 is the same as that between the interlayer insulating films 43 and 45. Can be set higher than the adhesive strength of In other words, the adhesive metal body 44
B can increase the adhesive force between the interlayer insulating films 43 and 45. This adhesive metal body 44B is connected to the interlayer insulating film 43.
Compared to the opening size of the connection hole 43C formed in the connection hole 43C, the size in plan is at least equivalent to or larger than the amount of mask misalignment in the semiconductor wafer manufacturing process.

The adhesive metal body 46B is formed on the same wiring layer as the second layer wiring 46A, and the second layer wiring 46A is formed on the same wiring layer.
Made of the same material as A. The adhesive metal body 46B is disposed between the interlayer insulating film 45 and the final protective film 47, and the adhesive force between the adhesive metal body 46B and any of the interlayer insulating film 45 and the final protective film 47 is equal to that of the interlayer insulating film 45 and the final protective film 47. 45 and final protective film 4
It can be set higher than the adhesive force between 7 and 7. Moreover, the adhesive metal body 46B includes the interlayer insulating film 45 and the final protective film 47.
The adhesive force between the final protective film 47 and the resin sealing body 6 can be set higher than that between the final protective film 47 and the resin sealing body 6. In other words, the adhesive metal body 46B can increase the adhesive strength between the interlayer insulating film 45 and the final protective film 47. This adhesive metal body 46B has a size that is at least equivalent to or larger than the opening size of the connection hole 45T formed in the interlayer insulating film 45, in plan view, by at least the amount of mask misalignment in the semiconductor wafer manufacturing process. Consists of.

Adhesive metal body 44 in the lower layer of the peel prevention structure 7
B is mechanically joined to the semiconductor region 42 through the connection hole 43C. That is, the adhesive metal body 44B, the semiconductor region 4
2 form an Al-Si eutectic alloy and are bonded to each other. The adhesive metal body 44B, the contact hole 43C, and the semiconductor region 42 sandwich the interlayer insulating film 43, and the interlayer insulating film 43
mechanically prevents peeling off from the semiconductor substrate 41. The adhesive force between the adhesive metal body 44B and the semiconductor region 42 includes the adhesive force between the adhesive metal bodies 44B and 46B, the adhesive force between the interlayer insulating films 43 and 45, and the adhesive force between the interlayer insulating film 45 and the final Adhesive force between the protective film 47 and the final protective film 47 and the resin sealing body 6
higher than any of the adhesive forces between.

[0053] The upper layer adhesive metal body 46B has a connection hole 45T.
It is mechanically joined to the lower layer adhesive metal body 44B through it. In other words, the adhesive metal bodies 44B and 46B are bonded to each other by metal-to-metal bonding. This adhesive metal body 44
B and 46B sandwich the interlayer insulating film 45 and mechanically prevent the interlayer insulating film 45 from peeling off from the interlayer insulating film 43 below. The adhesive force between the adhesive metal bodies 44B and 46B includes the adhesive force between the interlayer insulating films 43 and 45, the adhesive force between the interlayer insulating film 45 and the final protective film 47, and the adhesive force between the final protective film 47.
and the resin sealing body 6.

[0054] The adhesive metal body 44B, the adhesive metal body 4
Each of 6B basically does not have electrical functions as a circuit system such as wiring (44A, 46A) for connecting semiconductor elements or circuits 20, external terminals 46P, etc., and is configured as a so-called dummy metal pattern. be done. The adhesive metal bodies 44B and 46B are attached to the first layer wirings 44A and 46, respectively.
With the main purpose of not restricting the layout of each of A, each pattern is configured independently and configured to be electrically floating. In addition, the adhesive metal bodies 44B, 46
Each of B includes prevention of malfunction of the circuit 20 due to charging;
For the purpose of facilitating moisture capture, a fixed power source, for example, a ground potential (for example, 0 [V]) of the circuit 20 may be supplied. Adhesive metal body 44B to which this fixed power supply is supplied,
46B becomes floating when the supply of fixed power is cut off due to moisture infiltration, but the peel strength of any of the interlayer insulating films 43, 45 and the final protective film 47 may decrease, or the moisture may The amount of catch never decreases.

The adhesive metal body 44B, the connection hole 43C and the semiconductor region 42 are formed by forming an interlayer insulating film 43 on the semiconductor substrate 41.
It constitutes the rivet to which it is attached. Similarly, the adhesive metal body 46B
, the connection hole 45T and the adhesive metal body 44B constitute a rivet that attaches the upper interlayer insulating film 45 to the lower interlayer insulating film 43.

As shown in FIG. 1, a plurality of anti-peeling structures 7 arranged in the peripheral region 11 of the semiconductor pellet 4 are provided between each of the tab suspension leads 2C and tabs 2D and the resin sealing body 6. Moisture that enters through the generated moisture infiltration paths 8 and 10 can be prevented from entering the wiring layer inside the semiconductor pellet 4 from around it. In addition, peripheral area 1
The anti-peeling structures 7 arranged at 1 can actively capture the moisture and prevent further intrusion of moisture into the interior of the semiconductor pellet 4.

Similarly, the external terminal 46 of the semiconductor pellet 4
The anti-peeling structure 7 arranged in the region 12 around P prevents moisture infiltrating through the moisture intrusion paths 8 and 9 generated between the inner lead 2A, the bonding wire 5, and the resin sealing body 6 into the semiconductor. External terminal 46P of pellet 4
can be prevented from penetrating into the wiring layer inside the semiconductor pellet 4 from around the semiconductor pellet 4. Each of the first-layer wiring 44A and the second-layer wiring 46A extending in the internal wiring layer basically has a wiring width that is 1 to 2 orders of magnitude larger than the size of one side of the external terminal 46P, which is square in plan view. Because they are so small, they are easily disconnected if corrosion occurs due to moisture. Furthermore, the anti-peeling structures 7 arranged in the surrounding area 12 can trap moisture.

Further, as shown in FIG. 2, the peeling prevention structure 7 is arranged in a region 14 of the semiconductor pellet 4 along the first layer wiring 44A (or the second layer wiring 46A). Further, the peeling prevention structure 7 has an area (circuit 20
13 (empty area where no external terminal 46P is formed). These peeling prevention structures 7 can prevent peeling of either the interlayer insulating films 43, 45 or the final protective film 47, as described above.

In this way, the bonding opening 47 formed in the final protective film 47 covering the external terminal 46P disposed on the surface of the interlayer insulating film 45 of the semiconductor pellet 4
In a resin-sealed semiconductor device 1 in which an inner lead 2A is electrically connected through H (and via a bonding wire 5) and the semiconductor pellet 4 is sealed with a resin seal 6, the semiconductor pellet 4 is external terminal 46P
The adhesive force between the interlayer insulating film 45 and the final protective film 47 in the region 12 surrounding the semiconductor pellet 4 An adhesive metal body 46B is disposed that has a higher adhesive force than the resin sealing body 6 for sealing (constituting the peel prevention structure 7). With this configuration, compared to the adhesive strength between the final protective film 47 of the semiconductor pellet 4 and the resin sealing body 6 that seals the semiconductor pellet 4, it is possible to arrange the semiconductor pellet 4 around the external terminal 46P. The adhesive strength between the adhesive metal body 46B and the interlayer insulating film 45 and the final protective film 47 is increased, and the interlayer insulating film 45 and the final protective film 4
Semiconductor pellet 4 can improve the adhesiveness between semiconductor pellet 4 and 7.
This prevents the final protective film 47 around the external terminal 46P from peeling off from the interlayer insulating film 45, and eliminates a path for moisture to enter between the interlayer insulating film 45 and the final protective film 47. Further, the adhesive metal body 46B can capture moisture that enters from the external terminal 46P through the moisture infiltration path between the interlayer insulating film 45 and the final protective film 47, and can suppress further intrusion of moisture. As a result, the external terminal 46 of the semiconductor pellet 4
Since the second layer wiring 46A disposed in the region 12 around P with the adhesive metal body 46B interposed therebetween can be prevented from corrosion due to moisture, the moisture resistance of the resin-sealed semiconductor device 1 can be improved.

Further, the adhesive metal body 46B is formed of the same wiring layer as the external terminal 46P of the semiconductor pellet 4 (formed in the same manufacturing process). With this configuration, the adhesive metal body 46B is attached to the external terminal 4 of the semiconductor pellet 4.
Since it can be formed using the process of forming 6P, the number of steps in the manufacturing process of the semiconductor pellet 4 (semiconductor wafer) of the resin-sealed semiconductor device 1 can be reduced.

Further, on the element formation surface of the semiconductor substrate 41, an interlayer insulating film 43, a first layer wiring 44A, an interlayer insulating film 45,
A semiconductor pellet 4 on which a second layer wiring 46A and a final protective film 47 are sequentially laminated is mounted on the surface of a tab 2D supported by a tab suspension lead 2C, and the semiconductor pellet 4 is sealed with a resin sealing body 6. In the resin-sealed semiconductor device 1 to be sealed, interlayer insulating films 43 and 45 are provided between the interlayer insulating films 43 and 45 in the most peripheral region 11 of the element forming surface of the semiconductor substrate 41 of the semiconductor pellet 4, respectively. or the interlayer insulating film 45 in the most peripheral region 11.
An adhesive metal body 46B is disposed between the interlayer insulating film 45 and the final protective film 47, the adhesive strength of which is higher than that between the interlayer insulating film 45 and the final protective film 47, respectively. With this configuration, the semiconductor substrate 41 of the semiconductor pellet 4
In the most peripheral region 11 of the element formation surface, the adhesive force between the interlayer insulating films 43 and 45 or the adhesive force between the interlayer insulating film 45 and the final protective film 47 is increased, and the interlayer insulating films 43 and 45 are The surrounding area 1 based on the linear expansion coefficient difference between the interlayer insulating film 45 and the final protective film 47
1 can be prevented from peeling off, and a path for moisture to enter between the interlayer insulating films 43 and 45 or between the interlayer insulating film 45 and the final protective film 47 can be eliminated. Further, the adhesive metal bodies 44B, 46
In the region 11 around the semiconductor pellet 4, each of B penetrates into the internal region through a moisture infiltration path between the interlayer insulating films 43 and 45 or between the interlayer insulating film 45 and the final protective film 47. Captures moisture and prevents further moisture from entering. As a result, the interlayer insulating films 43 and 4 of the semiconductor pellet 4 due to moisture reaching the region 11 around the semiconductor pellet 4 through the inner lead 2A.
5, or a second layer wiring 46A disposed between the interlayer insulating film 45 and the final protective film 47.
The moisture resistance of the resin-sealed semiconductor device 1 can be improved.

Further, a part of the adhesive metal body 44B passes through a contact hole 43C formed under the adhesive metal body 44B of the interlayer insulating film 43, and a contact hole 43C formed in the lower layer of the interlayer insulating film 43 is connected to the adhesive metal body 44B. It is bonded to the semiconductor region 42 of the semiconductor substrate 41. With this configuration, the adhesive force between the adhesive metal body 44B and the semiconductor region 42 can be made higher than the adhesive force between the adhesive metal body 44B and the interlayer insulating film 43. Since the interlayer insulating film 43 can be sandwiched between the body 44B and the semiconductor region 42, peeling of the interlayer insulating film 43 can be further prevented. Or, the adhesive metal body 4
A part of the region 6B is bonded to the adhesive metal body 44B formed under the interlayer insulating film 45 through a connection hole 45T formed under the adhesive metal body 46B of the interlayer insulating film 45. With this configuration, the adhesive metal body 46B
The adhesive strength between the adhesive metal bodies 46B and 44B can be made higher than that between the adhesive metal bodies 44B and 46B, and the interlayer insulation film 45 is sandwiched between the adhesive metal bodies 44B and 46B. Therefore, peeling of the interlayer insulating film 45 can be further prevented.

According to experiments conducted by the present inventor, when the planar size of the semiconductor pellet 4 of the resin-sealed semiconductor device 1 employing the MSP structure is 5×5 [mm 2 ], about 9 [mm 2 ] are formed around the semiconductor pellet 4. kg/cm2] was generated, and the peeling stress per 100 [μm2] of the semiconductor pellet 4 was about 1 [g]. Connection hole 43C or 45
When the planar size of T is 3×3 [μm2], the peeling prevention structure 7 can withstand a peeling stress of about 0.3 [μm2], so 4 per 100 [μm2] of the semiconductor pellet 4
If ~5 peeling prevention structures 7 are arranged, peeling of the interlayer insulating films 43, 45 or the final protective film 47 of the semiconductor pellet 4 can be prevented.

(Embodiment 2) This embodiment 2 is a second embodiment of the present invention in which the planar size of the peel-off prevention structure 7 is increased in the resin-sealed semiconductor device of the above-described embodiment 1.

FIG. 3 (a plan view of main parts) shows a semiconductor pellet mounted on a resin-sealed semiconductor device employing an MSP structure, which is a second embodiment of the present invention.

As shown in FIG. 3, in the semiconductor pellet 4 mounted on the resin-sealed semiconductor device 1 employing the MSP structure of this embodiment, the planar size of the peeling prevention structure 7 is configured to be large. In other words, in the peel prevention structure 7, the adhesive metal bodies 44B, 46B, the connection holes 43C, 45T, and the semiconductor region 42 are all larger in size than those of the peel prevention structure 7 of the first embodiment. Ru.

[0067] The peeling prevention structure 7 constructed in this way is
Since the separation area between the individual peeling prevention structures 7 can be abolished and the occupied area can be increased by the amount equivalent to this abolished area, the adhesive area or moisture trapping area can be increased, and the resin-sealed semiconductor device can be improved. 1. Moisture resistance can be improved.

(Embodiment 3) In the present embodiment 3, in the resin-sealed semiconductor device of the above-mentioned embodiment 1, a peeling prevention structure is provided around the connecting portion between the first layer wiring and the second layer wiring. This is a third embodiment of the present invention, in which a.

FIG. 4 (enlarged plan view of main parts) shows a semiconductor pellet mounted on a resin-sealed semiconductor device employing an MSP structure according to a third embodiment of the present invention.

As shown in FIG. 4, the semiconductor pellet 4 mounted on the resin-sealed semiconductor device 1 employing the MSP structure of this embodiment includes a first layer wiring 44A and a second layer wiring 46.
A peel prevention structure 7 is formed in the area around each connection portion of A. This peeling prevention structure 7 includes first layer wiring 44A,
The main purpose is that the interlayer insulating film 45, which contracts due to thermal stress, disperses the cutting stress acting at the connection portion relative to each of the second layer wirings 46A, and improves the mechanical strength at this connection portion. Constructed as a purpose. In other words, the peeling prevention structure 7 prevents the interlayer insulating film 45 from peeling off from each of the first layer wiring 44A and the second layer wiring 46A, and The internal stress of each wiring 46A and the internal stress of the interlayer insulating film 45 can be offset.

[0071] The first layer wiring 44A, the second layer wiring 4
Each connection part of 6A is easily cut due to miniaturization, and the interlayer insulating films 43, 45 or the final protective film 47
The thermal stress generated in the semiconductor pellet 4 is greater in the peripheral portion than in the center. That is, at least in the peripheral region of the semiconductor pellet 4 and in the region where the opening size of the contact hole 45T is small, the peeling prevention structure 7 is arranged around the connection portion of each of the first layer wiring 44A and the second layer wiring 46A. .

Further, as shown in FIG. 5 (enlarged plan view of the main part of the semiconductor pellet), the peeling prevention structure 7 is formed according to the planar patterns of the first layer wiring 44A and the second layer wiring 46A. , is not limited to a rectangular shape in plan, but may be configured in a U-shape, L-shape, etc. in plan.

In this way, the connection hole 45T formed in the interlayer insulating film 45 covering the first layer wiring 44A extending on the element formation surface of the semiconductor substrate 41 of the semiconductor pellet 4
The second layer wiring 46A extending on the interlayer insulating film 45 is connected through the semiconductor pellet 4, and the semiconductor pellet 4 is sealed in the resin molding body 6.
In the resin-sealed semiconductor device 1 sealed with
Around the connection hole 45T connecting the layer wiring 44A and the second layer wiring 46A, an adhesive metal body 44B formed of the same wiring layer as the first layer wiring 44A, and the second layer wiring 46A are formed. The adhesive metal bodies 46B formed of the same wiring layer are arranged, and each of the adhesive metal bodies 44B and 46B is passed through a connection hole (opening) 45T formed in the interlayer insulating film 45. Connecting. With this configuration, the peeling prevention structure 7 is arranged in the peripheral area of the connection between the first layer wiring 44A and the second layer wiring 46A, and thermal stress concentrated in the connection part of the interlayer insulating film 45 is suppressed. Since it can be dispersed in the peeling prevention structure 7, it is possible to prevent disconnection defects at the connection portion due to the generation of thermal stress described above.

Further, the above-mentioned peeling prevention structure 7 has a connection portion between the first layer wiring 44A and either the wiring formed in the semiconductor region 42 or the wiring formed in the same gate wiring layer as the gate electrode of the MISFET. It may be placed around.

(Example 4) This example 4 is an example of the present invention in which the present invention is applied to a MOS capacitor element mounted on a semiconductor pellet of a resin-sealed semiconductor device adopting the MSP structure of Example 1 described above. This is a fourth embodiment of the invention.

FIG. 6 (enlarged plan view of main parts) shows a semiconductor pellet mounted on a resin-sealed semiconductor device employing an MSP structure according to a fourth embodiment of the present invention.

As shown in FIG. 6, a semiconductor pellet 4 of a resin-sealed semiconductor device employing the MSP structure of Example 4
The MOS capacitive element C mounted on the element isolation insulating film 49
(or an interlayer insulating film 43), the semiconductor region 42 formed on the main surface of the semiconductor substrate 41 is used as a lower layer electrode, and a dielectric film (not shown) is interposed between the semiconductor region 42 and the first layer. The wiring 44A is configured as an upper layer electrode.

A second layer wiring 46B is connected to the first layer wiring 44A, which is the upper electrode of the MOS capacitive element C, through a connection hole 45T. The first layer wiring 44A, the connection hole 45T, and the second layer wiring 46B, which are the upper layer electrodes of this MOS capacitive element C, sandwich the interlayer insulating film 45, and prevent the interlayer insulating film 45 from peeling off from the upper layer electrode. A peeling prevention structure 7 is configured to prevent peeling. The adoption of this anti-peeling structure 7 makes it possible for MOS
This is particularly effective in this case because when the area of the upper layer electrode of the capacitive element C increases, the stress generated between the upper layer electrode and the interlayer insulating film 45 increases, and the interlayer insulating film 45 is likely to peel off.

[0079] Not limited to the MOS capacitive element C, among the wirings arranged on the semiconductor pellet 4, the power supply wiring (for example, the ground power supply wiring) whose wiring width is larger than the signal wiring can be used as the first layer wiring 44A. If configured, a similar peeling prevention structure 7 may be configured on this power supply wiring.

In this way, a semiconductor having a wiring layer in which the second layer wiring 46A is arranged on the interlayer insulating film 45 covering the upper layer electrode (first layer wiring 44A) or power supply wiring of the MOS capacitive element C. In a resin-sealed semiconductor device 1 in which a pellet 4 is sealed with a resin-sealed body 6, the semiconductor pellet 4 is
The adhesive metal body 46B is formed of a wiring layer in which the second layer wiring 46A is arranged on the upper layer electrode or power supply wiring area of the MOS capacitor element C of the interlayer insulation film 45, and A contact hole 45T is formed on a part of the electrode in the upper layer of the MOS capacitive element C of the film 45 or on a part of the power supply wiring, and a part of the adhesive metal body 46B is passed through the contact hole 45T and connected to the upper layer of the MOS capacitive element C. Connect to electrode or power wiring. With this configuration, the connection hole 4 is connected between the upper layer electrode or power supply wiring of the MOS capacitive element C and the interlayer insulating film 45.
Since the interlayer insulating film 45 is sandwiched between the adhesive metal members 46B connected through 5T, it is possible to prevent the interlayer insulating film 45 from peeling off from the upper electrode or power supply wiring of the MOS capacitive element C.

[0081] As described above, the invention made by the present inventor is as follows.
Although the present invention has been specifically described based on the above-mentioned embodiments, it goes without saying that the present invention is not limited to the above-mentioned embodiments, and can be modified in various ways without departing from the gist thereof.

For example, in the present invention, each of the interlayer insulating film 45 and the final protective film 47 of the semiconductor pellet 4 of the resin-sealed semiconductor device 1 may be composed of an inorganic film such as a silicon oxide film or a silicon nitride film. .

The present invention can also be applied to the case where the semiconductor pellet 4 of the resin-sealed semiconductor device 1 has a single-layer wiring structure or a multilayer wiring structure of three or more layers.

The present invention can also be applied to any resin-sealed semiconductor device, such as an SOP structure, a QFP structure, or a TAB structure.

[0085]

Effects of the Invention A brief explanation of the effects obtained by typical inventions disclosed in this application is as follows.

In the resin-sealed semiconductor device, corrosion of the wiring extending in the peripheral area of the external terminal of the semiconductor pellet can be prevented and moisture resistance can be improved.

In the resin-sealed semiconductor device, corrosion of wiring extending in the peripheral area of the semiconductor pellet can be prevented and moisture resistance can be improved.

In the resin-sealed semiconductor device, there may be disconnection defects in the connection area between the upper and lower wirings of the semiconductor pellet, power supply wiring,
Peeling of the interlayer insulating film in the semiconductor element or its surrounding area can be prevented.

In the resin-sealed semiconductor device, the manufacturing process can be simplified.

[Brief explanation of drawings]

FIG. 1 is a sectional view of a main part of a resin-sealed semiconductor device employing an MSP structure, which constitutes a consumer linear IC according to a first embodiment of the present invention.

FIG. 2 is a plan view of essential parts of a semiconductor pellet mounted on the resin-sealed semiconductor device.

FIG. 3 is a plan view of a main part of a semiconductor pellet mounted on a resin-sealed semiconductor device employing an MSP structure according to a second embodiment of the present invention.

FIG. 4 is an enlarged plan view of a main part of a semiconductor pellet mounted on a resin-sealed semiconductor device employing an MSP structure according to a third embodiment of the present invention.

FIG. 5 is an enlarged plan view of essential parts of the semiconductor pellet.

FIG. 6 is an enlarged plan view of a main part of a semiconductor pellet mounted on a resin-sealed semiconductor device employing an MSP structure according to a fourth embodiment of the present invention.

[Explanation of symbols]

1...Resin-sealed semiconductor device, 2A to 2C...Lead, 2D
...Tab, 4...Semiconductor pellet, 5...Bonding wire, 6...Resin sealing body, 7...Peeling prevention structure, 11-14...Arrangement region of peeling prevention structure, 41...Semiconductor substrate, 42...Semiconductor region, 43, 45 ...Interlayer insulating film, 43C, 45T... Connection hole, 44A, 46A... Wiring, 44B, 46B... Metal body for adhesion, 47... Final protective film, 47H... Opening.

Claims (6)

[Claims] 1. A lead is electrically connected to an external terminal disposed on the surface of an interlayer insulating film of a semiconductor pellet through an opening formed in a final protective film covering the external terminal, and the semiconductor pellet is sealed with a resin. In the resin-sealed semiconductor device, the adhesive force between the interlayer insulating film and the final protective film around the external terminal of the semiconductor pellet is as described above. 1. A resin-sealed semiconductor device characterized by disposing an adhesive metal body that has a higher adhesive force than the adhesive force between the final protective film and the resin that seals the semiconductor pellet. 2. The resin-sealed semiconductor device according to claim 1, wherein the adhesive metal body is formed of the same wiring layer as an external terminal of the semiconductor pellet. 3. A semiconductor pellet in which an interlayer insulating film, a wiring layer, and a final protective film are sequentially laminated on the element formation surface of a semiconductor substrate is mounted on the surface of a lead, and the semiconductor pellet is sealed with a resin. In resin-sealed semiconductor devices,
The adhesive force between the semiconductor pellet and the interlayer insulating film is lower than that between the semiconductor substrate and the interlayer insulating film, respectively. The adhesive force between the interlayer insulating film and the final protective film is higher than that between the interlayer insulating film and the final protective film, respectively. 1. A resin-sealed semiconductor device characterized in that a metal body for adhesion is arranged to increase the height of the semiconductor device. 4. A part of the adhesive metal body is connected to a wiring layer or a semiconductor substrate formed under the interlayer insulating film through a connection hole formed under the adhesive metal body of the interlayer insulating film. 4. The resin-sealed semiconductor device according to claim 1, wherein the resin-sealed semiconductor device is bonded to an element forming surface of the semiconductor device. 5. A second wiring extending on the interlayer insulating film is connected to the first wiring extending on the element formation surface of the semiconductor substrate of the semiconductor pellet through a connection hole formed in an interlayer insulating film covering the first wiring. In a resin-sealed semiconductor device in which this semiconductor pellet is sealed with resin, the first wiring and the second
A first adhesive metal body formed of the same wiring layer as the first wiring, and a second adhesive metal body formed of the same wiring layer as the second wiring, respectively, around the connection hole connecting the wiring. A resin-sealed semiconductor device, wherein a portion of each of the first adhesive metal body and the second adhesive metal body is connected through an opening formed in the interlayer insulating film. 6. A resin-sealed semiconductor device in which a semiconductor pellet having a wiring layer on an interlayer insulating film covering an electrode of a capacitive element or a power supply wiring is sealed with a resin, wherein the capacitive element of the interlayer insulating film of the semiconductor pellet is sealed with a resin. An adhesive metal body formed of the wiring layer is formed on the electrode or power supply wiring region, an opening is formed on a portion of the electrode of the capacitive element of the interlayer insulating film or a portion of the power supply wiring, and the adhesive A resin-sealed semiconductor device, characterized in that a part of the metal body is connected to an electrode of a capacitive element or a power supply wiring through the opening.