JPH04305974A - Image sensor - Google Patents
Image sensorInfo
- Publication number
- JPH04305974A JPH04305974A JP3041549A JP4154991A JPH04305974A JP H04305974 A JPH04305974 A JP H04305974A JP 3041549 A JP3041549 A JP 3041549A JP 4154991 A JP4154991 A JP 4154991A JP H04305974 A JPH04305974 A JP H04305974A
- Authority
- JP
- Japan
- Prior art keywords
- image sensor
- conductor layer
- circuit conductor
- light
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 239000004020 conductor Substances 0.000 claims abstract description 15
- 239000011347 resin Substances 0.000 claims abstract description 13
- 229920005989 resin Polymers 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 20
- 238000000605 extraction Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 7
- 229920001230 polyarylate Polymers 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000005394 sealing glass Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は光学画像を電気信号に変
換するイメージセンサに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image sensor that converts an optical image into an electrical signal.
【0002】0002
【従来の技術】従来、イメージセンサは、図3に於て導
体配線を形成した基板上20に、受光素子22を含む半
導体素子21を導電性接着剤により固定し、半導体の電
極25と回路導体層24とをワイヤーボンド法により金
やアルミニウムなどの金属細線で接続し、さらに、その
上から透明なガラス封止材によって封止する構造をとっ
ていた。2. Description of the Related Art Conventionally, in an image sensor, as shown in FIG. 3, a semiconductor element 21 including a light-receiving element 22 is fixed onto a substrate 20 on which conductor wiring is formed using a conductive adhesive, and an electrode 25 of the semiconductor and a circuit conductor are connected to each other. The layer 24 is connected with a thin metal wire made of gold, aluminum, or the like by a wire bonding method, and then sealed with a transparent glass sealing material from above.
【0003】0003
【発明が解決しようとする課題】しかしながら上記のよ
うな構成では、ワイヤーボンド等複雑な工程が必要であ
った。[Problems to be Solved by the Invention] However, the above configuration requires complicated steps such as wire bonding.
【0004】0004
【課題を解決するための手段】上記問題点を解決するた
めに本発明は、表面上に回路導体層を形成した透光性基
板に、光硬化型絶縁樹脂を介して受光素子を有する半導
体素子を、フェイスダウンで、その素子上に形成された
取り出し電極が上記回路導体層に当接するように実装す
ることによりイメージセンサを作成する。ここに於て、
上記透光性基板の表面を粗にするものである。[Means for Solving the Problems] In order to solve the above-mentioned problems, the present invention provides a semiconductor element having a light-receiving element on a light-transmitting substrate on which a circuit conductor layer is formed, via a photocurable insulating resin. An image sensor is created by mounting the device face down so that the lead-out electrode formed on the device comes into contact with the circuit conductor layer. Here,
This is to roughen the surface of the light-transmitting substrate.
【0005】[0005]
【作用】本発明は上記した構成によって、光硬化型絶縁
樹脂と透光性基板との接着性を向上させ、半導体素子と
透光性基板との密着性を上げ、イメージセンサの信頼性
を向上させるものである。[Operation] The present invention improves the adhesion between the photocurable insulating resin and the light-transmitting substrate, increases the adhesion between the semiconductor element and the light-transmitting substrate, and improves the reliability of the image sensor with the above-described structure. It is something that makes you
【0006】[0006]
【実施例】以下本発明の一実施例のイメージセンサにつ
いて、図面を参照しながら説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS An image sensor according to an embodiment of the present invention will be described below with reference to the drawings.
【0007】図1は本発明の実施例におけるイメージセ
ンサの正面断面図、 図2は本発明の実施例におけるイ
メージセンサの側面断面図を示すものである。11は透
光性基板、12は透光性基板11の表面上に形成された
回路導体層、13は半導体素子として用いたイメージセ
ンサチップ、14はイメージセンサチップ13に設けら
れている電極、15は半導体イメージセンサチップ13
を、透光性基板11へ実装するための透明光硬化型絶縁
樹脂、16は半導体イメージセンサチップ13を保護す
るための保護層、17は半導体イメージセンサチップ1
3に設けられている受光素子である。FIG. 1 is a front sectional view of an image sensor according to an embodiment of the present invention, and FIG. 2 is a side sectional view of an image sensor according to an embodiment of the present invention. 11 is a transparent substrate, 12 is a circuit conductor layer formed on the surface of the transparent substrate 11, 13 is an image sensor chip used as a semiconductor element, 14 is an electrode provided on the image sensor chip 13, 15 is a semiconductor image sensor chip 13
16 is a protective layer for protecting the semiconductor image sensor chip 13 , 17 is a transparent photocurable insulating resin for mounting on the transparent substrate 11 , and 17 is the semiconductor image sensor chip 1
This is the light receiving element provided in 3.
【0008】以上のように構成されたイメージセンサの
製造方法を説明する。まず半導体プロセスを用いて単結
晶シリコン基板(ウエハ)上に、フォトトランジスタま
たはフォトダイオード等の受光素子17とCCDやMO
S、バイポーラIC等のアクセス回路(図示せず)を設
けたものを作る。各電極14については、2層Al配線
のプロセスを用い、スパッタリング方法により数μm程
度ウエハ表面より突出した構造になっている。その後こ
のウエハを高精度ダイシング技術により切断し、半導体
イメージセンサチップ13を作る。次にポリアリレート
(PA)、ポリエーテルサルフォン(PES)またはポ
リエチレンテレフタレート(PET)等の透光性基板1
1上に、銅等の金属を、蒸着法やスパッタリング法、ま
たは箔等を用いて形成し、後にフォトリソ法によって回
路導体層12を形成する。この透光性基板11の所定に
位置に、アクリレート系の透明光硬化型絶縁樹脂15を
スタンピング法やスクリーン印刷法等で所定量塗布し、
その上に半導体イメージセンサチップ13を電極14が
所定の回路導体層12に当接するようにフェイスダウン
で配置する。その後、この半導体イメージセンサチップ
13の上方から圧力を加えながら、透明光硬化型絶縁樹
脂15に透光性基板11を通して紫外線照射をし、硬化
させ、実装を完了する。さらにその上からシリコーン等
の樹脂をディスペンサー等で塗布し、保護層16を形成
する。A method of manufacturing the image sensor configured as described above will be explained. First, using a semiconductor process, a light receiving element 17 such as a phototransistor or photodiode and a CCD or MO are mounted on a single crystal silicon substrate (wafer).
S, a device equipped with an access circuit (not shown) such as a bipolar IC is made. Each electrode 14 has a structure that protrudes from the wafer surface by several micrometers by using a two-layer Al wiring process and a sputtering method. Thereafter, this wafer is cut using high-precision dicing technology to produce semiconductor image sensor chips 13. Next, a transparent substrate 1 such as polyarylate (PA), polyethersulfone (PES), or polyethylene terephthalate (PET)
1, a metal such as copper is formed using a vapor deposition method, a sputtering method, or a foil, and later a circuit conductor layer 12 is formed using a photolithography method. A predetermined amount of acrylate-based transparent photocurable insulating resin 15 is applied to a predetermined position of the translucent substrate 11 by a stamping method, screen printing method, etc.
A semiconductor image sensor chip 13 is placed thereon face down so that the electrode 14 is in contact with a predetermined circuit conductor layer 12. Thereafter, while applying pressure from above the semiconductor image sensor chip 13, the transparent photocurable insulating resin 15 is irradiated with ultraviolet light through the transparent substrate 11 to be cured, completing the mounting. Further, a resin such as silicone is applied thereon using a dispenser or the like to form a protective layer 16.
【0009】このイメージセンサについては、透光性基
板11及び透明光硬化型絶縁樹脂15を通して光情報を
受光素子17が検知し、これを電気信号に変換するよう
になっている。In this image sensor, a light receiving element 17 detects optical information through a transparent substrate 11 and a transparent photocurable insulating resin 15, and converts this into an electrical signal.
【0010】透明光硬化型絶縁樹脂15としては、ウレ
タンアクリレート系、あるいはエポキシアクリレート系
の紫外線硬化樹脂が接着性、光感度の点から好適である
。As the transparent photocurable insulating resin 15, urethane acrylate-based or epoxy acrylate-based ultraviolet curable resins are preferred from the viewpoint of adhesiveness and photosensitivity.
【0011】上記図1の構成のイメージセンサを作成す
る際に、透光性基板11にポリアリレートフィルムを用
い、またその上に銅箔を貼り、フォトリソ法により回路
導体層を形成した。When producing the image sensor having the structure shown in FIG. 1, a polyarylate film was used as the transparent substrate 11, copper foil was pasted thereon, and a circuit conductor layer was formed by photolithography.
【0012】このポリアリレートフィルムの表面を粗に
することにより透明光硬化型絶縁樹脂15との接着性を
向上させ、高温高湿(85℃、85%)、高温(85℃
)、低温(ー40℃)及び熱衝撃(ー40℃〜+85℃
)等の種々の試験に耐えることを可能にし、イメージセ
ンサとしての信頼性を飛躍的に向上させ、実用化を可能
にした。[0012] By roughening the surface of this polyarylate film, the adhesiveness with the transparent photocurable insulating resin 15 is improved, and it is
), low temperature (-40℃) and thermal shock (-40℃~+85℃)
) and other tests, dramatically improving reliability as an image sensor and making it possible to put it into practical use.
【0013】[0013]
【発明の効果】以上のように本発明によれば、半導体イ
メージセンサ素子を金属細線による配線(ワイヤーボン
ド)作業を行なわず、また、半導体素子においてもバン
プ電極を形成することなく、回路導体層を設けた透光性
基板に、高信頼性で実装することができ、しかも安価な
イメージセンサを提供することができる。As described above, according to the present invention, a semiconductor image sensor element can be connected to a circuit conductor layer without wiring (wire bonding) using thin metal wires, and without forming bump electrodes in a semiconductor element. It is possible to provide an inexpensive image sensor that can be mounted with high reliability on a light-transmitting substrate provided with an image sensor.
【図1】本発明の実施例におけるイメージセンサの正面
断面図である。FIG. 1 is a front sectional view of an image sensor in an embodiment of the present invention.
【図2】本発明の実施例におけるイメージセンサの側面
断面図である。FIG. 2 is a side sectional view of an image sensor in an embodiment of the present invention.
【図3】従来のイメージセンサの断面図である。FIG. 3 is a cross-sectional view of a conventional image sensor.
11 透光性基板
12 回路導体層
13 半導体イメージセンサチップ14
電極
15 透明光硬化型絶縁樹脂
16 保護膜
17 受光素子
20 基板
21 半導体イメージセンサチップ22
受光素子
23 封止ガラス
24 回路導体層
25 電極
26 金属細線11 Transparent substrate 12 Circuit conductor layer 13 Semiconductor image sensor chip 14
Electrode 15 Transparent photocurable insulating resin 16 Protective film 17 Light receiving element 20 Substrate 21 Semiconductor image sensor chip 22
Light receiving element 23 Sealing glass 24 Circuit conductor layer 25 Electrode 26 Fine metal wire
Claims (2)
基板と、この透光性基板の表面上に、光硬化型絶縁樹脂
を介して実装した受光素子を有する半導体素子とを備え
、上記半導体素子はフェイスダウンで、その素子上に形
成された取り出し電極が上記回路導体層に当接する構造
をしたことを特徴とするイメージセンサ。1. A semiconductor device comprising: a light-transmitting substrate on which a circuit conductor layer is formed; and a semiconductor element having a light-receiving element mounted on the surface of the light-transmitting substrate via a photocurable insulating resin; An image sensor characterized in that the semiconductor element is face-down and has a structure in which an extraction electrode formed on the element is in contact with the circuit conductor layer.
のイメージセンサ。2. The image sensor according to claim 1, wherein the surface of the light-transmitting substrate is roughened.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3041549A JPH04305974A (en) | 1991-03-07 | 1991-03-07 | Image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3041549A JPH04305974A (en) | 1991-03-07 | 1991-03-07 | Image sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04305974A true JPH04305974A (en) | 1992-10-28 |
Family
ID=12611510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3041549A Pending JPH04305974A (en) | 1991-03-07 | 1991-03-07 | Image sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04305974A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS614780A (en) * | 1984-06-18 | 1986-01-10 | Tadashi Takemoto | Temporary fixing adhesive composition for spot welding |
JPS6398292A (en) * | 1986-10-15 | 1988-04-28 | Matsushita Electric Ind Co Ltd | Solid-state image pick-up parts |
-
1991
- 1991-03-07 JP JP3041549A patent/JPH04305974A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS614780A (en) * | 1984-06-18 | 1986-01-10 | Tadashi Takemoto | Temporary fixing adhesive composition for spot welding |
JPS6398292A (en) * | 1986-10-15 | 1988-04-28 | Matsushita Electric Ind Co Ltd | Solid-state image pick-up parts |
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